CN109890607A - Gas barrier film and device comprising it - Google Patents
Gas barrier film and device comprising it Download PDFInfo
- Publication number
- CN109890607A CN109890607A CN201780065240.1A CN201780065240A CN109890607A CN 109890607 A CN109890607 A CN 109890607A CN 201780065240 A CN201780065240 A CN 201780065240A CN 109890607 A CN109890607 A CN 109890607A
- Authority
- CN
- China
- Prior art keywords
- layer
- inorganic thin
- thin film
- gas barrier
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 120
- 239000010410 layer Substances 0.000 claims abstract description 307
- 239000010408 film Substances 0.000 claims abstract description 213
- 239000010409 thin film Substances 0.000 claims abstract description 173
- 239000007789 gas Substances 0.000 claims abstract description 142
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 239000012044 organic layer Substances 0.000 claims abstract description 103
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 77
- 239000006096 absorbing agent Substances 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 150000001721 carbon Chemical group 0.000 claims abstract description 30
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 22
- 238000002834 transmittance Methods 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 44
- 238000005259 measurement Methods 0.000 claims description 34
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 18
- 238000002329 infrared spectrum Methods 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 13
- 125000004429 atom Chemical group 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 6
- OWIRPIFMOQOXNZ-UHFFFAOYSA-N [C+4].O Chemical compound [C+4].O OWIRPIFMOQOXNZ-UHFFFAOYSA-N 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 8
- 230000005764 inhibitory process Effects 0.000 abstract description 4
- 239000011347 resin Substances 0.000 description 35
- 229920005989 resin Polymers 0.000 description 35
- 239000011248 coating agent Substances 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 21
- 238000000576 coating method Methods 0.000 description 18
- -1 polyethylene terephthalate Polymers 0.000 description 17
- 239000012321 sodium triacetoxyborohydride Substances 0.000 description 16
- 238000012545 processing Methods 0.000 description 12
- 238000003851 corona treatment Methods 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 10
- 230000003746 surface roughness Effects 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000012495 reaction gas Substances 0.000 description 9
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 8
- 238000005452 bending Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 239000000178 monomer Substances 0.000 description 8
- 238000003848 UV Light-Curing Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 208000037656 Respiratory Sounds Diseases 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 4
- 229910018540 Si C Inorganic materials 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 4
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000007756 gravure coating Methods 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001678 elastic recoil detection analysis Methods 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- 238000010422 painting Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920001225 polyester resin Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- FYADHXFMURLYQI-UHFFFAOYSA-N 1,2,4-triazine Chemical compound C1=CN=NC=N1 FYADHXFMURLYQI-UHFFFAOYSA-N 0.000 description 2
- DVNYTAVYBRSTGK-UHFFFAOYSA-N 5-aminoimidazole-4-carboxamide Chemical compound NC(=O)C=1N=CNC=1N DVNYTAVYBRSTGK-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 241000656145 Thyrsites atun Species 0.000 description 2
- 230000006750 UV protection Effects 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- OBOXTJCIIVUZEN-UHFFFAOYSA-N [C].[O] Chemical compound [C].[O] OBOXTJCIIVUZEN-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 210000005097 arteria cerebelosa anteroinferior Anatomy 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- JJFFNQSUUAIWHB-UHFFFAOYSA-N carbamic acid;prop-2-enoic acid Chemical compound NC(O)=O.OC(=O)C=C JJFFNQSUUAIWHB-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000001841 imino group Chemical group [H]N=* 0.000 description 2
- 238000001802 infusion Methods 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000007763 reverse roll coating Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 239000000344 soap Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 2
- 229940094989 trimethylsilane Drugs 0.000 description 2
- UFLXKQBCEYNCDU-UHFFFAOYSA-N (2,2,6,6-tetramethylpiperidin-4-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CC(C)(C)NC(C)(C)C1 UFLXKQBCEYNCDU-UHFFFAOYSA-N 0.000 description 1
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- OTJZMNIBLUCUJZ-UHFFFAOYSA-N 2,4-diphenyl-1,3,5-triazine Chemical class C1=CC=CC=C1C1=NC=NC(C=2C=CC=CC=2)=N1 OTJZMNIBLUCUJZ-UHFFFAOYSA-N 0.000 description 1
- IYAZLDLPUNDVAG-UHFFFAOYSA-N 2-(benzotriazol-2-yl)-4-(2,4,4-trimethylpentan-2-yl)phenol Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(O)C(N2N=C3C=CC=CC3=N2)=C1 IYAZLDLPUNDVAG-UHFFFAOYSA-N 0.000 description 1
- UZUNCLSDTUBVCN-UHFFFAOYSA-N 2-(benzotriazol-2-yl)-6-(2-phenylpropan-2-yl)-4-(2,4,4-trimethylpentan-2-yl)phenol Chemical compound C=1C(C(C)(C)CC(C)(C)C)=CC(N2N=C3C=CC=CC3=N2)=C(O)C=1C(C)(C)C1=CC=CC=C1 UZUNCLSDTUBVCN-UHFFFAOYSA-N 0.000 description 1
- SITYOOWCYAYOKL-UHFFFAOYSA-N 2-[4,6-bis(2,4-dimethylphenyl)-1,3,5-triazin-2-yl]-5-(3-dodecoxy-2-hydroxypropoxy)phenol Chemical compound OC1=CC(OCC(O)COCCCCCCCCCCCC)=CC=C1C1=NC(C=2C(=CC(C)=CC=2)C)=NC(C=2C(=CC(C)=CC=2)C)=N1 SITYOOWCYAYOKL-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GNBCKKSGQPLTRW-UHFFFAOYSA-N C(C=C)(=O)OC.C(N)(O)=O Chemical compound C(C=C)(=O)OC.C(N)(O)=O GNBCKKSGQPLTRW-UHFFFAOYSA-N 0.000 description 1
- PQBRZGOVIXSTBR-UHFFFAOYSA-N CCC(C[PH2]=O)(CCCC)CC Chemical compound CCC(C[PH2]=O)(CCCC)CC PQBRZGOVIXSTBR-UHFFFAOYSA-N 0.000 description 1
- HRFBHMIHCVWPTF-UHFFFAOYSA-N COC(C=C)=O.N1C(=O)NC(=O)NC1=O Chemical compound COC(C=C)=O.N1C(=O)NC(=O)NC1=O HRFBHMIHCVWPTF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical class C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- FLPKSBDJMLUTEX-UHFFFAOYSA-N bis(1,2,2,6,6-pentamethylpiperidin-4-yl) 2-butyl-2-[(3,5-ditert-butyl-4-hydroxyphenyl)methyl]propanedioate Chemical compound C1C(C)(C)N(C)C(C)(C)CC1OC(=O)C(C(=O)OC1CC(C)(C)N(C)C(C)(C)C1)(CCCC)CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 FLPKSBDJMLUTEX-UHFFFAOYSA-N 0.000 description 1
- RSOILICUEWXSLA-UHFFFAOYSA-N bis(1,2,2,6,6-pentamethylpiperidin-4-yl) decanedioate Chemical compound C1C(C)(C)N(C)C(C)(C)CC1OC(=O)CCCCCCCCC(=O)OC1CC(C)(C)N(C)C(C)(C)C1 RSOILICUEWXSLA-UHFFFAOYSA-N 0.000 description 1
- VYCDFODYRFOXDA-UHFFFAOYSA-N bis(2,2,6,6-tetramethyl-1-undecoxypiperidin-4-yl) carbonate Chemical compound C1C(C)(C)N(OCCCCCCCCCCC)C(C)(C)CC1OC(=O)OC1CC(C)(C)N(OCCCCCCCCCCC)C(C)(C)C1 VYCDFODYRFOXDA-UHFFFAOYSA-N 0.000 description 1
- XITRBUPOXXBIJN-UHFFFAOYSA-N bis(2,2,6,6-tetramethylpiperidin-4-yl) decanedioate Chemical compound C1C(C)(C)NC(C)(C)CC1OC(=O)CCCCCCCCC(=O)OC1CC(C)(C)NC(C)(C)C1 XITRBUPOXXBIJN-UHFFFAOYSA-N 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- MGNZXYYWBUKAII-UHFFFAOYSA-N cyclohexa-1,3-diene Chemical compound C1CC=CC=C1 MGNZXYYWBUKAII-UHFFFAOYSA-N 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- HBGGXOJOCNVPFY-UHFFFAOYSA-N diisononyl phthalate Chemical compound CC(C)CCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCC(C)C HBGGXOJOCNVPFY-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- NVYQDQZEMGUESH-UHFFFAOYSA-N dimethylsilyloxy(dimethyl)silane Chemical class C[SiH](C)O[SiH](C)C NVYQDQZEMGUESH-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- WCZHHZGITDJUQI-UHFFFAOYSA-N ethane-1,2-diol;methyl prop-2-enoate Chemical compound OCCO.COC(=O)C=C WCZHHZGITDJUQI-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- UJRDRFZCRQNLJM-UHFFFAOYSA-N methyl 3-[3-(benzotriazol-2-yl)-5-tert-butyl-4-hydroxyphenyl]propanoate Chemical compound CC(C)(C)C1=CC(CCC(=O)OC)=CC(N2N=C3C=CC=CC3=N2)=C1O UJRDRFZCRQNLJM-UHFFFAOYSA-N 0.000 description 1
- WTRRGIQUWPQIEA-UHFFFAOYSA-N methyl prop-2-enoate propane Chemical compound CCC.COC(C=C)=O WTRRGIQUWPQIEA-UHFFFAOYSA-N 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000003566 oxetanyl group Chemical group 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- UIDUKLCLJMXFEO-UHFFFAOYSA-N propylsilane Chemical compound CCC[SiH3] UIDUKLCLJMXFEO-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
- 229960001860 salicylate Drugs 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 229940116351 sebacate Drugs 0.000 description 1
- CXMXRPHRNRROMY-UHFFFAOYSA-L sebacate(2-) Chemical compound [O-]C(=O)CCCCCCCCC([O-])=O CXMXRPHRNRROMY-UHFFFAOYSA-L 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/048—Forming gas barrier coatings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/06—Coating with compositions not containing macromolecular substances
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D201/00—Coating compositions based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/61—Additives non-macromolecular inorganic
Abstract
It is an object of the invention to assign light resistance to the gas barrier film for the purpose of damp proof for flexible display, to realize that comparison gas barrier film more leans on the inhibition of the UV deterioration of the device inside of lower layer and/or the inhibition of the UV deterioration to gas barrier film itself.The present invention provides gas barrier film, it successively has the substrate layer including at least flexible substrate, inorganic thin film layer, the organic layer containing ultraviolet absorbing agent, wherein, aforementioned inorganic film layer contains silicon atom, oxygen atom and carbon atom, and the light transmittance at the 380nm of These gases barrier film is 20% or less.
Description
Technical field
The present invention relates to gas barrier film and include its device.
Background technique
In the past, the gas barrier film for organic el display etc. is proposed.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 8-187825 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2006-297737 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2011-194766 bulletin
Patent document 4: Japanese Unexamined Patent Publication 2012-6154 bulletin
Patent document 5: Japanese Unexamined Patent Publication 2013-154584 bulletin
Patent document 6: Japanese Unexamined Patent Publication 2012-6154 bulletin
Patent document 7: Japanese Unexamined Patent Publication 2014-189585 bulletin
Patent document 8: Japanese Unexamined Patent Publication 2014-226894 bulletin
Summary of the invention
Problems to be solved by the invention
However, the light resistance of These gases barrier film is not satisfactory.Therefore, the present invention is to for flexible display
The gas barrier film for the purpose of damp proof of equal devices assigns light resistance, to realize that comparison gas barrier film more leans on lower layer
Device inside UV deterioration inhibition and/or inhibition to the UV of gas barrier film deterioration itself.
Means for solving the problems
Present inventor gas barrier film has been repeated in detail research to solve aforementioned problems, knot
Fruit completes the present invention.
That is, the present invention includes preferred embodiment below.
[1] gas barrier film successively has the substrate layer including at least flexible substrate, inorganic thin film layer, containing purple
The organic layer of ultraviolet absorbers, wherein
Aforementioned inorganic film layer contains silicon atom, oxygen atom and carbon atom,
Light transmittance at the 380nm of These gases barrier film is 20% or less.
[2] gas barrier film as described in [1], wherein be in opposite with the organic layer side containing ultraviolet absorbing agent
The surface of the substrate layer of side has other inorganic thin film layer.
[3] gas barrier film as described in [1] or [2], wherein in substrate layer, at least one table of flexible substrate
Face has organic layer A.
[4] gas barrier film as described in any one of [1]~[3], wherein organic layer A be selected from by slippery layer and
Layer in the group of flatness layer composition.
[5] gas barrier film as described in any one of [1]~[4], wherein the phase for including in aforementioned inorganic film layer
The atomicity of carbon atom for the sum of silicon atom, oxygen atom and carbon atom is than on the thickness direction of inorganic thin film layer
Continuously change.
[6] gas barrier film as described in any one of [1]~[5], wherein for aforementioned inorganic film layer,
The average atom number ratio of the carbon atom (C) for silicon atom (Si) in inorganic thin film layer is in the range of formula (1).
0.10 < C/Si < 0.50 (1)
[7] gas barrier film as described in any one of [1]~[6], wherein respectively indicating aforementioned inorganic film layer
Film thickness direction the distance away from aforementioned inorganic thin-film surface, opposite with include in the aforementioned inorganic film layer at each distance
The atomicity of silicon for the sum of silicon atom, oxygen atom and carbon atom than, oxygen atomicity than between the atomicity ratio of, carbon
The silicon distribution curve of relationship, in oxygen distribution curve and carbon profile, meet condition (i) and (ii).
(i) atomicity of silicon is than the atomicity of the atomicity when carbon of, oxygen than the film thickness direction in aforementioned inorganic film layer
90% or more region in meet formula (5) expression condition,
Atomicity ratio > silicon atomicity ratio > carbon atomicity ratio (5) of oxygen
(ii) aforementioned carbon profile has at least one extreme value.
[8] device, comprising appointing in [1]~[7] in such a way that the coat containing ultraviolet absorbing agent becomes outermost
Gas barrier film described in one.
[9] gas barrier film as described in any one of [1]~[7], wherein utilize the ATR method of infrared spectrum measurement
When being measured to the surface of aforementioned inorganic film layer, in 950~1050cm-1Locate existing peak intensity (I1), with 1240~
1290cm-1Locate existing peak intensity (I2) intensity ratio in the range of formula (2).
0.01≤I2/I1< 0.05 (2)
[10] gas barrier film as described in [1]~any one of [7] and [9], wherein utilize infrared spectrum measurement
When ATR method is measured aforementioned inorganic thin-film surface, in 950~1050cm-1Locate existing peak intensity (I1) and 770
~830cm-1Locate existing peak intensity (I3) intensity ratio in the range of formula (3).
0.25≤I3/I1≤0.50 (3)
[11] gas barrier film as described in any one of [1]~[7], [9] and [10], wherein utilize infrared spectroscopy
When the ATR method of measurement is measured aforementioned inorganic thin-film surface, in 770~830cm-1Locate existing peak intensity (I3) and
In 870~910cm-1Locate existing peak intensity (I4) intensity ratio in the range of formula (4).
0.70≤I4/I3< 1.00 (4)
The effect of invention
Gas barrier film of the invention has sufficient light resistance and bendability, therefore can be suitably used for device.
Detailed description of the invention
[Fig. 1] is the schematic diagram indicated for manufacturing the manufacturing device of the gas barrier film in embodiment.
Specific embodiment
Gas barrier film of the invention successively has at least and has the substrate layer of flexible substrate, inorganic thin film layer, contains
The coat of ultraviolet absorbing agent, aforementioned inorganic film layer contain silicon atom, oxygen atom and carbon atom, These gases barrier film
380nm at light transmittance be 20% or less.
(substrate layer)
Substrate layer at least has flexible substrate.Substrate layer can be single layer, or multilayer.When substrate layer is single layer,
Preferred substrates layer is made of flexible substrate.When substrate layer is multilayer, preferred substrates layer at least has flexible substrate and substrate layer
Display is flexible, and the face that the substrate layer of inorganic thin film layer is more preferably laminated is flexible substrate, further preferred aforenoted multi-layer respectively by
Flexible substrate is constituted.
(flexible substrate)
As flexible substrate, can be used includes resin film of at least one kind of resin as resin component, preferably colorless and transparent
Resin film.As the resin that can be used for resin film, such as polyethylene terephthalate (PET), poly- naphthalenedicarboxylic acid can be enumerated
The polyester resin such as glycol ester (PEN)；The polyolefin resins such as polyethylene (PE), polypropylene (PP), cyclic polyolefin；Polyamide resin
Rouge；Polycarbonate resin；Polystyrene resin；Polyvinyl alcohol resin；Vinyl-vinyl acetate copolymer it is saponified；Poly- third
Alkene nitrile resin；Acetal resin；Polyimide resin；Polythiaether (PES) as needed can also combine two or more in them.
In these, according to the necessary characteristic such as the transparency, heat resistance, linear expansivity, preferably selected from polyester resin, polyolefin resin
It uses, more preferably uses PET, PEN, cyclic polyolefin.
Flexible substrate can be non-stretched resin film, be also possible to benefit by known method (be uniaxially stretched, tentering formula by
Secondary biaxial stretch-formed, tentering formula simultaneously biaxial drawing, tubular type simultaneously biaxial drawing etc.) along the direction of travel (side MD of resin base material
To) and/or the direction (direction TD) that becomes right angle with the direction of travel of resin base material non-stretched resin base material is stretched
Obtained from resin film.
The thickness of flexible substrate can be considered the manufacture of stable gas barrier film and suitably set.For example, from i.e.
From the viewpoint of keeping the transmission that also can be carried out film in a vacuum such, preferably 5~500 μm, more preferably 10~200 μm, into
One step is preferably 50~100 μm.Substrate layer be flexible substrate single layer when, the thickness of substrate layer as hereinbefore, preferably 5~
500 μm, more preferably 10~200 μm, further preferably 50~100 μm.When substrate layer is multilayer, constituting includes flexible substrate
The overall thickness of whole layers of substrate layer be preferably 5~500 μm, more preferably 10~200 μm, further preferably 50~100 μ
m。
The layer for constituting flexible substrate can be the refraction of orthogonal 2 ingredient in the faces such as the phase difference film of λ/4, the phase difference film of λ/2
The mutually different phase difference film of rate.As the material of phase difference film, cellulose-based resin can be enumerated, polycarbonate-based resin, gathered
Aromatic ester system resin, polyester based resin, acrylic resin, polysulfones system resin, polyether sulfone system resin, annular ethylene series resin, liquid
Orientation cured layer of brilliant compound etc..Wherein, polycarbonate-based resin film due to inexpensive and can obtain uniform film and excellent
Choosing uses.As film-forming method, solvent cast method, Precise Extrusion method of residual stress that film can be reduced etc. can be used, from uniform
, it is preferable to use solvent cast method from the aspect of property.Drawing process is not particularly limited, and can apply can obtain uniform optical characteristics
Roller between longitudinal uniaxial, stenter be laterally uniaxially stretched.
Phase difference Re (550) is preferably in the face at wavelength 550nm when the layer for constituting flexible substrate is λ/4 phase difference film
100~180nm, more preferably 110~170nm, further preferably 120~160nm.
Phase difference Re (550) is preferably in the face at wavelength 550nm when the layer for constituting flexible substrate is λ/2 phase difference film
220~320nm, more preferably 240~300nm, further preferably 250~280nm.
When flexible substrate is phase difference film, the inverse wave length point that phase difference value becomes larger with the wavelength of measurement light can be shown
Property is dissipated, the positive wavelength dispersion characteristics that phase difference value becomes smaller with the wavelength of measurement light can also be shown, can also show phase difference value
The hardly changed flat wavelength dispersing characteristic with the wavelength of measurement light.
Flexible substrate is when showing the phase difference film of inverse wave length dispersibility, by the phase meter of the af at wavelength lambda of flexible substrate
When being shown as Re (λ), flexible substrate 10 can meet Re (450)/Re (550) < 1 and Re (650)/Re (550) > 1.
From can make light through or by light absorption it is such from the viewpoint of, flexible substrate is preferably colorless and transparent.It is more specific and
Speech, total light transmittance is preferably 80% or more, and more preferably 85% or more.In addition, haze value (mist degree) be preferably 5% with
Under, more preferably 3% hereinafter, further preferably 1% or less.
From the substrate that can be used for organic assembly, Energy device it is such from the viewpoint of, flexible substrate is preferably insulating properties, excellent
Selecting resistivity is 106Ω cm or more.
From with from the viewpoint of the adaptation of inorganic thin film layer etc., the surface of flexible substrate can be implemented at surface-active
Reason.As surface-active-treatment, can enumerate such as sided corona treatment, corona treatment, flame treatment, liquid scrubbing processing.
(organic layer A)
For improve with the adaptation of inorganic thin film layer and/or the purpose of flatness, substrate layer can flexible substrate extremely
A few surface includes the organic layer A of identical or different type.Substrate layer is also the same when being multilayer, can constitute scratching for substrate layer
Property substrate at least one surface on include identical or different type organic layer A.It, can as the example of preferred embodiment
Enumerate following embodiments: the face (at least one face i.e. in the surface of substrate layer) that the substrate layer of inorganic thin film layer can be laminated is
Flexible substrate, also, have on the surface that inorganic thin film layer at least one surface of the flexible substrate, more preferably is laminated organic
Layer A.As the example of other preferred embodiments, can enumerate following embodiments: the two sides of substrate layer is flexible substrate, and
There is organic layer A at least one surface of the flexible substrate, the surface of more preferable stacking inorganic thin film layer.The thickness of organic layer
Preferably 0.5~10 μm of degree, more preferably 0.8~5 μm, further preferably 1~3 μm.As organic layer A, can enumerate for example
Planarization layer, slippery layer and antiblocking layers.
When substrate layer includes organic layer A, substrate layer only can have organic layer on a surface of flexible substrate；Alternatively,
There can be different types of organic layer on two surfaces of flexible substrate, such as there is flatness layer on a surface, another
A surface has slippery layer.
Organic layer A can usually be formed in the following manner: will include light as ultraviolet light or electronic beam curing resin
The monomer of curable resin and/or the resin combination of oligomer are coated in flexible substrate, are dried as needed, then
Make its solidification by the irradiation of ultraviolet light or electron beam.Resin combination may include as needed solvent, Photoepolymerizationinitiater initiater,
The additives such as thermal polymerization, antioxidant, ultraviolet absorbing agent, plasticizer.
As the example of the method based on coating, the various coating methods used in the past, such as spraying coating, rotation can be enumerated
Painting, stick painting, curtain coating, infusion process, air doctor blade method, sliding coating, hopper coating, reverse roll coating, intaglio plate coating, extrusion
The methods of coating.
Planarization layer can be solidified to form by UV curable resin being coated on substrate and makes it carry out UV.It can enumerate
Such as UV curing type carbamate acrylate, UV solidified type epoxy base acrylate, UV curing type polyester third
Alkene acid ester resin, UV solidified type epoxy resin, UV curing type polyalcohol acrylate resin etc..
As planarization layer, rigid body pendulum-type physical property test machine (such as A&D Company, Limited RPT- is utilized
3000W etc.) when evaluating the temperature change of the elasticity modulus on aforementioned planarization layer surface, the bullet on aforementioned planarization layer surface
Property modulus reduce by 50% or more temperature be 150 DEG C or more be preferred.
UV curable resin containing inorganic particulate for example can be by being coated on substrate and making it to carry out UV by slippery layer
It is solidified to form.As UV curable resin, such as UV curing type carbamate acrylate, UV curing type can be enumerated
Epoxy acrylate resin, UV curing type polyester acrylate resin, UV solidified type epoxy resin, UV curing type polyalcohol third
Alkene acid ester resin etc..As inorganic particulate, can enumerate for example silica, aluminium oxide, talcum, clay, calcium carbonate, magnesium carbonate,
Barium sulfate, aluminium hydroxide, titanium dioxide, zirconium oxide etc..Organic layer A be slippery layer when, can easily to gas barrier film into
The transmission of row roller.
(inorganic thin film layer)
From can play viewpoint and resistance to bend(ing) as the higher performance for preventing vapor from penetrating, manufacture is easy
From the viewpoint of property and low manufacturing cost are such, inorganic thin film layer at least contains silicon atom (Si), oxygen atom (O) and carbon atom
(C).As inorganic thin film layer, the layer of the known inorganic material with barrier properties for gases can be suitably utilized.Inorganic thin film layer can
Think 1 layer, or multilayer.In addition, the process for forming inorganic thin film layer can carry out 1 time, can also carry out repeatedly.It carries out more
It in the case where secondary, can carry out, can also carry out at different conditions under the same conditions.
The example of inorganic material is metal oxide, metal nitride, metal oxynitride, metal carbon oxide and packet
Containing at least two kinds of mixtures in them.In addition, the layer as inorganic material, it is possible to use stacking 2 layers or more it is above-mentioned inorganic
Multilayer film made of film layer.In addition, inorganic thin film layer can be set in one or two surface of substrate layer.
It, can be with general formula SiO for inorganic thin film layerαCβ[in formula, α and β are each independently represented less than 2 just
Number.] indicate compound be principal component.Herein, so-called " for principal component ", refer to relative to constitute inorganic thin film layer all at
For the quality divided, the content of the ingredient is 50 mass % or more, preferably 70 mass % or more, more preferable 90 mass % or more.
Inorganic thin film layer can contain general formula SiOαCβThe a kind of compound indicated, can also contain general formula SiOαCβTwo or more change indicated
Close object.More than one in α and β in aforementioned formula can be fixed value on the thickness direction of inorganic thin film layer, can also
To change.
In addition, inorganic thin film layer contains element, such as hydrogen atom, nitrogen in addition to silicon atom, oxygen atom and carbon atom
One or more of atom, boron atom, aluminium atom, phosphorus atoms, sulphur atom, fluorine atom and chlorine atom atom.
When inorganic thin film layer also contains hydrogen atom other than containing silicon atom, oxygen atom and carbon atom, preferably with general formula
SiOαCβHγThe compound that [in formula, α and β are identical as aforementioned meaning, and γ represents less than 6 positive number] indicates is principal component.This place
It calls " for principal component ", refers to for constituting the quality of whole components of inorganic thin film layer, the content of the ingredient is 50 matter
Measure % or more, preferably 70 mass % or more, more preferable 90 mass % or more.Inorganic thin film layer can contain general formula SiO α CβHγIt indicates
1 kind of compound, general formula SiO α C can also be containedβHγTwo or more compound indicated.One in α, β and γ in aforementioned formula
It can be fixed value on the thickness direction of aforementioned film layer more than a, can also change.
For inorganic thin film layer, indicate that the carbon for silicon atom (Si) in inorganic thin film layer is former by C/Si
When the average atom number ratio of sub (C), from the viewpoint of improving compactness, reducing the defects of fine gap, crackle, C/Si's
Range preferably satisfies formula (1).
0.10 < C/Si < 0.50 (1)
In addition, more preferably in the range of 0.15 0.45 < < C/Si, further preferably 0.20 < C/Si <'s 0.40
In range, particularly preferably in the range of 0.25 0.35 < < C/Si.
In addition, for inorganic thin film layer, by O/Si indicate in inorganic thin film layer for silicon atom (Si)
Oxygen atom (O) average atom number ratio when, from the viewpoint of improving compactness, reducing the defects of fine gap, crackle,
It is preferred that more preferably in the range of 1.55 1.85 < < O/Si, further preferably existing in the range of 1.50 1.90 < < O/Si
In the range of 1.60 < O/Si < 1.80, particularly preferably in the range of 1.65 1.75 < < O/Si.
It should be noted that XPS depth can be carried out under the following conditions for average atom number ratio C/Si and O/Si
Measurement is dissected, by the distribution curve of obtained silicon atom, oxygen atom and carbon atom, finds out each atom being averaged in a thickness direction
Then atomic concentration calculates average atom number ratio C/Si and O/Si.
<measurement of XPS depth profiling>
Etch ion type: argon (Ar+)
Etch-rate (SiO2Heat oxide film scaled value): 0.05nm/sec
Etching interval (SiO2Scaled value): 10nm
X-ray photoelectron spectroscopy device: Thermo Fisher Scientific corporation, type designation " VG Theta
Probe”
X-ray irradiation: monocrystalline is divided AlK α
The hot spot and its size of X-ray: the ellipse of 800 400 μm of μ ms
For inorganic thin film layer, when carrying out infrared spectrum measurement (ATR method) to inorganic thin film layer surface, 950
~1050cm-1Locate existing peak intensity (I1) and in 1240~1290cm-1Locate existing peak intensity (I2) intensity ratio can be
In the range of meeting formula (2).
0.01≤I2/I1< 0.05 (2)
Think the peak intensity ratio I calculated by infrared spectrum measurement (ATR method)2/I1Indicate inorganic thin film layer in relative to
Si-CH for Si-O-Si3Relative scale.Think for the inorganic thin film layer for the relationship for meeting formula (2) expression, by
It tails off in the defects of compactness height, fine gap, crackle, therefore, becomes that barrier properties for gases is excellent and excellent impact resistance
Inorganic thin film layer.About peak intensity ratio I2/I1Range, from higher keep inorganic thin film layer compactness from the viewpoint of,
Preferably 0.02≤I2/I1The range of < 0.04.
In addition, meeting aforementioned peak intensity ratio I2/I1Range in the case where, gas barrier film moderately becomes easy cunning
It is dynamic, become to be less susceptible to adhesion.Conversely, I2/I1Greatly, it is poor there are bendability and become difficult to slide and incline when i.e. Si-C is excessive
To.In addition, in I2/I1In the case that small, i.e. Si-C is very few, there is also the tendencies of bendability decline.
The infrared spectrum measurement on the surface of inorganic thin film layer can be by having the ATR attachment for having used germanium crystal as prism
The Fourier transformation type infrared spectrophotometer (Japan's light splitting (strain) system, FT/IR-460Plus) of (PIKE MIRacle) is surveyed
It is fixed.
For inorganic thin film layer, when carrying out infrared spectrum measurement (ATR method) to inorganic thin film layer surface, 950~
1050cm-1Locate existing peak intensity (I1) and in 770~830cm-1Locate existing peak intensity (I3) intensity ratio can be in formula (3)
In the range of.
0.25≤I3/I1≤0.50 (3)
Think the peak intensity ratio I calculated by infrared spectrum measurement (ATR method)3/I1Indicate inorganic thin film layer in relative to
The relative scale of Si-C, Si-O for Si-O-Si etc..Think for meet formula (3) expression relationship inorganic thin film layer and
Speech not only keeps high compactness, but also due to importing carbon, excellent as resistance to bend(ing) and excellent impact resistance nothing
Machine film layer.About peak intensity ratio I3/I1Range, from keep inorganic thin film layer compactness and resistance to bend(ing) it is balanced
Viewpoint consideration, preferably 0.25≤I3/I1≤ 0.50 range, more preferably 0.30≤I3/I1≤ 0.45 range.
For inorganic thin film layer, when carrying out infrared spectrum measurement (ATR method) to inorganic thin film layer surface, 770~
830cm-1Locate existing peak intensity (I3) and in 870~910cm-1Locate existing peak intensity (I4) intensity ratio can be in formula (4)
In range.
0.70≤I4/I3< 1.00 (4)
Think the peak intensity ratio I calculated by infrared spectrum measurement (ATR method)4/I3Indicate inorganic thin film layer in Si-C phase
The mutual ratio in the peak of pass.Think not only to keep high-densit for the inorganic thin film layer for the relationship for meeting formula (4) expression
Property, and due to importing carbon, excellent as resistance to bend(ing) and excellent impact resistance inorganic thin film layer.About peak intensity
Degree compares I4/I3Range, from keep inorganic thin film layer compactness and resistance to bend(ing) harmony from the viewpoint of, preferably
0.70≤I4/I3The range of < 1.00, more preferably 0.80≤I4/I3The range of < 0.95.
From from the viewpoint of being not easily broken when inorganic thin film layer to be bent in this way, the thickness of inorganic thin film layer is preferably 5
~3000nm.In addition, in the case where using glow discharge plasma, forming inorganic thin film layer using plasma CVD method,
Aforementioned inorganic film layer is formed while discharging by substrate, therefore, more preferably 10~2000nm, further preferably
100~1000nm.
The averag density of inorganic thin film layer can be 1.8g/cm3More than.It should be noted that inorganic thin film layer is " average
Density " can be found out in the following manner: by utilizing Rutherford backscattering method (Rutherford Backscattering
Spectrometry:RBS atomicity, the atomicity of carbon, the atomicity of oxygen and the utilization hydrogen Forward scattering of the silicon) found out
The atomicity for the hydrogen that (Hydrogen Forward scattering Spectrometry:HFS) is found out calculates measurement range
The weight of inorganic thin film layer, divided by the volume (irradiated area of ion beam and the product of film thickness) of the inorganic thin film layer of measurement range.
By making inorganic thin film layer that there is 1.8g/cm3Above density, inorganic thin film layer has compactness high and fine sky as a result,
The defects of gap and crackle few structure.In addition, the feelings that inorganic thin film layer is formed by silicon atom, oxygen atom, carbon atom and hydrogen atom
Under condition, the averag density of inorganic thin film layer is preferably smaller than 2.22g/cm3。
It will indicate that the silicon at the distance away from the inorganic thin film layer surface and each distance of the film thickness direction of inorganic thin film layer is former
The curve of relationship between the atomicity ratio of son is known as silicon distribution curve.Similarly, the inorganic thin away from this of film thickness direction will be indicated
The curve of relationship between the atomicity ratio of oxygen atom at the distance of film surface and each distance is known as oxygen distribution curve.Separately
It outside, will be between the atomicity ratio of the carbon atom at the distance and each distance away from the inorganic thin film layer surface that indicate film thickness direction
The curve of relationship be known as carbon profile.Original of the atomicity of so-called silicon atom than the atomicity when carbon atom of, oxygen atom
Subnumber ratio, refer to for the sum of the silicon atom, oxygen atom and the carbon atom that include in inorganic thin film layer away from inorganic thin
The ratio of respective atomicity at each distance of film surface.
Inhibit from easy because preferably being wrapped in inorganic thin film layer from the viewpoint of the decline of barrier properties for gases caused by being bent
The atomicity of the carbon atom for the sum of silicon atom, oxygen atom and carbon atom contained is than the thickness in inorganic thin film layer
Continuously change on direction.Herein, the atomicity of so-called aforementioned carbon atom continuously changes than in a thickness direction, indicates for example
In carbon profile above-mentioned, the atomicity of carbon atom ratio continuously occur shape repeatedly in the range of defined displacement amplitude
At the increase and reduction of multiple extreme values, indicate the atomicity for not including carbon than the part discontinuously changed, the i.e. original of carbon atom
Subnumber ratio will not be increased or decreased monotonously.
From the viewpoint of barrier properties for gases, bendability, preferably by the silicon distribution curve in aforementioned inorganic film layer, oxygen
The atomicity ratio and carbon profile that cloth curve and carbon profile obtain meet condition (i) and (ii).
(i) atomicity of silicon is than the atomicity of the atomicity when carbon of, oxygen than the film thickness direction in aforementioned inorganic film layer
90% or more region in meet formula (5) expression condition,
Atomicity ratio > silicon atomicity ratio > carbon atomicity ratio (5) of oxygen
(ii) aforementioned carbon profile has at least one extreme value.
The carbon profile of inorganic thin film layer is preferably substantially continuous.So-called carbon profile is substantially continuous, refers to not
Atomicity comprising the carbon in carbon profile is than the part that discontinuously changes.Specifically, by film thickness direction away from aforementioned
The distance of inorganic thin film layer surface is denoted as x [nm], when the atomicity ratio of carbon is denoted as C, preferably satisfies formula (6).
|dC/dx|≤0.01 (6)
In addition, the carbon profile of inorganic thin film layer preferably has at least one extreme value.So-called extreme value herein refers to opposite
The maximum value or minimum value of the atomicity ratio of each element for the distance away from aforementioned inorganic thin-film surface of film thickness direction.
Extreme value be change film thickness direction away from aforementioned inorganic thin-film surface apart from when, element atomicity ratio switch to subtract from increase
Value of the atomicity of few point or element than switching to the atomicity ratio from increased point from reduction.Extreme value for example can be based in film thickness
Multiple atomicity ratios measured that locate on direction are found out.For the locating of atomicity ratio, film thickness direction
Interval is for example set to 20nm or less.Show that the position of extreme value can obtain in the following manner on film thickness direction: for packet
Discrete data group containing the measurement result respectively to locate, such as to the measurement knot that mutually different 3 or more locate
Fruit is compared, and finds out measurement result and switchs to reduced position or switch to increased position from reduction from increasing.Show extreme value
Position can also for example be obtained and carrying out differential to the curve of approximation found out by discrete data group above-mentioned.From display extreme value
Position play atomicity than being increased monotonically or when the section of monotone decreasing is, for example, 20nm or more, the edge from the position of display extreme value
The absolute value of the difference that film thickness direction only moves atomicity ratio and extreme value at the position of 20nm is, for example, 0.03 or more.
For the aforementioned inorganic formed in a manner of meeting condition of the carbon profile at least one extreme value as described above
For film layer, incrementss of the gas permeation rate after bending for the gas permeation rate before bending and before being unsatisfactory for
The case where stating condition is compared and tails off.That is, by meeting aforementioned condition, barrier properties for gases caused by capable of being inhibited because of bending
The effect of decline.When forming aforementioned inorganic film layer in such a way that the number of the extreme value of carbon profile becomes 2 or more, with carbon
The number of the extreme value of distribution curve is that 1 situation is compared, and incrementss above-mentioned tail off.In addition, with the extreme value of carbon profile
Number when forming aforementioned inorganic film layer as 3 or more modes, the feelings that the number with the extreme value of carbon profile is 2
Condition is compared, and incrementss above-mentioned tail off.When carbon profile has 2 or more extreme values, show the position of the 1st extreme value in film thickness
The position of distance, 2nd extreme value adjacent with the 1st extreme value with showing away from aforementioned inorganic thin-film surface on direction is in film thickness direction
On the distance away from aforementioned inorganic thin-film surface absolute value of the difference preferably in the range of 1nm or more and 200nm or less, into one
Step is preferably in the range of 1nm or more and 100nm or less.
In addition, the difference of the maxima and minima of the atomicity ratio of the carbon in the carbon profile of aforementioned inorganic film layer
Absolute value is preferably 0.01 or more.It is and discontented for the aforementioned inorganic film layer formed in a manner of meeting aforementioned condition
The case where sufficient aforementioned condition, is compared, the incrementss of the gas permeation rate after bending for the gas permeation rate before bending
It tails off.That is, by meeting aforementioned condition, the effect of the decline of barrier properties for gases caused by capable of being inhibited because of bending.Carbon
When the absolute value of the difference of the maxima and minima of atomicity ratio is 0.02 or more, effect above-mentioned is improved, when being 0.03 or more,
Effect above-mentioned further increases.
It is lower, then aforementioned that there are the absolute value of the difference of the maxima and minima of the atomicity of the silicon in silicon distribution curve ratio
The tendency that the barrier properties for gases of inorganic thin film layer more improves.From the viewpoint, absolute value above-mentioned is preferably smaller than 0.05
(being less than 5at%), more preferably less than 0.04 (being less than 4at%) were further preferably no larger than for 0.03 (being less than 3at%).
In addition, in oxygen carbon profile, by the atomicity ratio of the atomicity of the oxygen atom at each distance when carbon atom
It is total when being denoted as " total atomicity ratio ", that there are the absolute value of the difference of the maxima and minima of total atomicity ratio is lower,
The then tendency that the barrier properties for gases of aforementioned inorganic film layer more improves.From the viewpoint, total atomicity ratio above-mentioned
Preferably smaller than 0.05, more preferably less than 0.04, it is further preferably no larger than 0.03.
If the composition for keeping aforementioned inorganic film layer substantially identical on aforementioned inorganic thin-film surface direction, before capable of making
It states the barrier properties for gases of inorganic thin film layer uniformly and increases.So-called substantially identical composition, refers to: in oxygen distribution song
It is respective in film thickness side at any 2 points of aforementioned inorganic thin-film surface in line, carbon profile and oxygen carbon profile
The number of extreme value present on is identical, the difference of the maxima and minima of the atomicity ratio of the carbon in respective carbon profile
Absolute value it is mutually the same or difference is within 0.05.
The inorganic thin film layer formed in a manner of meeting aforementioned condition can for example show to have used the soft of organic EL element
Barrier properties for gases required by property electronic device etc..
Inorganic thin film layer comprising silicon atom, oxygen atom and carbon atom is preferably by chemical vapour deposition technique (CVD method) shape
At, wherein more preferably utilize plasma chemical vapor deposition (PECVD) shape for having used glow discharge plasma etc.
At.
As the example of unstrpped gas, the organo-silicon compound with silicon atom and carbon atom can be enumerated.As organosilicon
The example of compound can enumerate hexamethyldisiloxane, 1,1,3,3- tetramethyl disiloxane, vinyl trimethylsilane, first
Base trimethyl silane, hexamethyldisilane, methyl-monosilane, dimethylsilane, trimethyl silane, diethylsilane, propyl silane,
Phenyl silane, vinyltriethoxysilane, vinyltrimethoxysilane, tetramethoxy-silicane, tetraethoxysilane, phenyl
Trimethoxy silane, methyltriethoxysilane, octamethylcy-clotetrasiloxane.In these organo-silicon compound, from compound
From the viewpoint of the characteristics such as the barrier properties for gases of treatability and obtained inorganic thin film layer, preferably hexamethyldisiloxane, 1,1,
3,3- tetramethyl disiloxanes.In addition, these organo-silicon compound can be used alone, or two or more can also be combined and
It uses.
In addition, can suitably select that the inorganic compounds such as oxide, nitride can be formed with aforementioned raw material gas reaction
Reaction gas, with aforementioned raw material gas mixing.As the reaction gas for being used to form oxide, such as oxygen, ozone can be used.Separately
Outside, as the reaction gas for being used to form nitride, such as nitrogen, ammonia can be used.These reaction gas can be used alone,
Or two or more can also be combined and used, such as in the case where formation nitrogen oxides, can will be used to form the reaction gas of oxide
Body is applied in combination with the reaction gas for being used to form nitride.Unstrpped gas and the flow-rate ratio of reaction gas can be according to formation films
The atomicity of inorganic material is adjusted than appropriate.
It can be by the flow-rate ratio of adjusting unstrpped gas and reaction gas, to control the value of aforementioned C/Si.For example, using respectively
Hexamethyldisiloxane (HMDSO) as unstrpped gas, use oxygen as in the case where reaction gas, if making relative to HMDSO
The ratio between oxygen flow for flow O2The range that/HMDSO is 5~25 can then control the value of C/Si in aforementioned range.
In order to supply aforementioned raw material gas to vacuum chamber, as needed, carrier gas can be used.In addition, in order to occur
Plasma discharge, as needed, usable electric discharge use gas.As such carrier gas and electric discharge gas, can be suitably used
The gas known, such as the rare gas such as helium, argon, neon, xenon can be used；Hydrogen.
In addition, the indoor pressure of vacuum (vacuum degree) can suitably be adjusted according to type of unstrpped gas etc., preferably 0.5~
The range of 50Pa.
Fig. 1 is workable manufacture dress in the manufacture for schematically show the inorganic thin film layer for including in gas barrier film
The schematic diagram of an example set is the schematic diagram that the device of inorganic thin film layer is formed using plasma chemical vapor deposition.Fig. 1
In, in order to make figure be easy observation, change is appropriately to size, the ratio etc. of each component.Manufacture dress shown in FIG. 1
It sets with outlet roller 11, take-up roll 71, transfer roller 21~24, gas supply pipe 41, plasma generation power supply 51, forming a film
The respectively arranged magnetic field forming device 61 and 62 in the inside of roller 31 and 32.In the device of Fig. 1, electricity is also doubled as at deflector roll 31 and 32
Pole becomes aftermentioned roll electrode.
It is at least inorganic thin in formation at deflector roll, gas supply pipe, magnetic field forming device in the constituent element of manufacturing device
It is configured in when film layer in vacuum chamber (not shown).The vacuum chamber is connect with vacuum pump (not shown).The dynamic of vacuum pump can be passed through
Make to adjust the internal pressure of vacuum chamber.
When using the device, by control plasma generation power supply, can make 2 between deflector roll space generate from
The discharge plasma of the film forming gas of gas supply pipe supply can be continuously to form a film using the discharge plasma of generation
Technique carries out plasma CVD film forming.
Film 100 before film forming is set with the state for being wound in outlet roller, on one side by film debatching along its length, on one side
Film is sent out.In addition, film end side be arranged take-up roll, for the film obtained after being formed a film while being drawn incite somebody to action
It winds and is accommodated web-like.
Aforementioned 2 are preferably oppositely disposed in a manner of extending in parallel at deflector roll.Two rollers are formed by conductive material, respectively
Film is transmitted while rotating.2 at deflector roll, it is preferable to use the identical rollers of diameter, for example, it is preferable to use 5cm or more and 100cm
Roller below.
For inorganic thin film layer, it is preferred that so that substrate layer is adjacent to a pair of of roll electrode respectively on one side when being formed
Surface be transmitted on one side, plasma is generated between a pair of electrodes, raw material is decomposed in the plasma, thus in flexibility
Inorganic thin film layer is formed on substrate.For a pair of electrodes above-mentioned, preferably with magnetic flux density in electrode and flexible substrate table
The mode that face is improved configures magnetite in electrode interior.There is following tendency as a result: plasma occur when, plasma with
High density is bound in electrode and flexible substrate.
(organic layer containing ultraviolet absorbing agent)
Organic layer containing ultraviolet absorbing agent is formed on inorganic thin film layer.Contained by being formed on inorganic thin film layer
There is the organic layer of ultraviolet absorbing agent, that is, when gas barrier film of the invention is bonded to device, contain ultraviolet radiation absorption
The organic layer of agent is formed on the outside of inorganic thin film layer, can absorb and/or obstruct electrically or electronically device, natural light as a result,
The ultraviolet light for including in can inhibit the deterioration of inorganic thin film layer, device.Therefore, gas barrier film of the invention is configured to
It is bonded in such a way that the organic layer containing ultraviolet absorbing agent becomes outside with device.Herein, so-called to contain ultraviolet radiation absorption
The organic layer of agent is formed on " outside " of inorganic thin film layer, refers to and is bonded to layer obtained from device in gas barrier film
In stack, the organic layer containing ultraviolet absorbing agent is formed on the side opposite with the face side of the lamination device of substrate layer.
In addition, inorganic thin film layer is formed on also the same, the organic layer quilt containing ultraviolet absorbing agent in the case where the two sides of substrate layer
It is formed on the inorganic thin film layer of the opposite side in the face being bonded with device, be preferably formed on gas barrier film and device
The outermost layer of the opposite side in the face of part fitting.
Light transmittance at the 380nm of organic layer containing ultraviolet absorbing agent is preferably 20% hereinafter, more preferably 15%
Hereinafter, further preferably 10% hereinafter, even more preferably be 5% or less.Light transmittance at 380nm uses spectrophotometer
(Japan light splitting (strain) UV, visible light near infrared spectrometer V-670 processed) measurement.
It as ultraviolet absorbing agent, is not particularly limited, organic uv absorbers and micropowder system ultraviolet light can be enumerated
Blocking agent.
As organic uv absorbers, enumerate BTA system, triazine system, acrylic, benzophenone series, amino can be enumerated
Butadiene-based, salicylate system etc..
As enumerate BTA system, such as 2,2- di-2-ethylhexylphosphine oxide [- 6 [(2H- benzene of 4- (1,1,3,3- tetramethyl butyl) can be enumerated
And triazole -2- base) phenol]], 2- (2H- benzotriazole -2- base) -4- (1,1,3,3- tetramethyl butyl) phenol, 2- [5- chlorine
(2H)-benzotriazole -2- base] -4- methyl -6- (tert-butyl) phenol etc..
The commercially available product of representative as enumerate BTA system organic uv absorbers can enumerate Sumika Chemtex
Company, Limited Sumisorb 200, Sumisorb 250, Sumisorb 300, Sumisorb 340, Sumisorb
350, Sumisorb 400, BASF AG TINUVIN PS, TINUVIN 99-2, TINUVIN 384-2,900 TINUVIN,
TINUVIN 928, TINUVIN 1130, (strain) ADEKA ADK STAB LA-24, ADK STAB LA-29, ADK STAB
LA-31, ADK STAB LA-32, ADK STAB LA-36 etc..(Sumisorb, TINUVIN and ADK STAB are registrar
Mark.)
As triazine system, such as 2- (4,6- diphenyl -1,3,5-triazines -2- base) -5- [(hexyl) oxygroup]-benzene can be enumerated
Phenol etc..
The commercially available product of representative as triazine system organic uv absorbers, can enumerate BASF AG TINUVIN 400,
TINUVIN 405, TINUVIN 460, TINUVIN 477, TINUVIN 479, (strain) ADEKA ADK STAB LA-46, ADK
STAB LA-F70 etc..
In addition, hindered amine etc. can be used to be used as light stabilizer.As hindered amine, for example bis- (2,2,6,6- tetramethyls can be enumerated
Base -4- piperidyl) sebacate, it is poly- [[6- (1,1,3,3- tetramethyl butyl) amino -1,3,5-triazines -2,4- diyl] [(2,
2,6,6- tetramethyl -4- piperidyls) imino group] hexa-methylene [(2,2,6,6- tetramethyl -4- piperidyl) imino group]], two fourths
Bis- (2,2,6,6- tetramethyl -4- piperidyl -1,6- hexamethylene diamine N- (2,2,6, the 6- tetramethyls of base amine 1,3,5-triazines N, N-
Base -4- piperidyl) butylamine condensation polymer etc..
The commercially available product of representative as HALS agent, can enumerate BASF AG TINUVIN111, TINUVIN 123,
TINUVIN 144, TINUVIN 292, TINUVIN 5100, (strain) ADEKA ADK STAB LA-52, ADK STAB LA-
57、ADK STAB LA-63P、ADK STAB LA-68、ADK STAB LA-72、ADK STAB LA-77、ADK STAB LA-
81, ADK STAB LA-82, ADK STAB LA-87, ADK STAB LA-402, ADK STAB LA-502 etc..
As micropowder system UV blockers, preferably particulate metal oxide, its more preferable average primary particle diameter 1~
In the range of 100nm and with ultraviolet protection effect particulate metal oxide.As metal oxide, can enumerate for example
Titanium oxide, zinc oxide, cerium oxide, iron oxide, magnesia.One or more of these particulate metal oxides, preferably 2 can be combined
Kind or more.
In addition, the shape as particulate metal oxide, is not particularly limited, it can be spherical, needle-shaped, rodlike, spindle
Shape, indefinite shape, plate etc., in addition, about crystalline, it is not also specifically limited, can be amorphism, rutile-type, rutile titania
Mine type etc..
For particulate metal oxide, preferably by existing known surface treatment, such as fluorine compounds processing, gather
Siloxane treated, polyorganosiloxane resin processing, suspention processing (pendant processing), silane coupling agent processing, titanium are even
Connection agent processing, finish are handled, N- is acylated lysine processing, polyacrylic acid processing, metallic soap is handled, amino acid handles, is inorganic
Compound processing, corona treatment, mechanochemistry processing etc., are surface-treated in advance, particularly preferably using selected from poly- silicon
One or more of oxygen alkane, silane, fluorine compounds, amino acid based compound, metallic soap surface treating agent carries out silicic acid anhydride.
The commercially available product of representative as particulate metal oxide can enumerate SUMITOMO OSAKA CEMENT Co., Ltd.
HMZD-50 processed etc..
After organic layer containing ultraviolet absorbing agent preferably coating agent of the coating containing ultraviolet absorbing agent, as needed
Make it dry and using the irradiation of ultraviolet light or electron beam make its solidify obtained from layer.
Coating agent containing ultraviolet absorbing agent can be containing ultraviolet absorbing agent, as resin component ultraviolet light or
Monomer and/or oligomer and additive as needed, such as light of the light-cured resin of electronic beam curing resin etc
The coating agent of polymerization initiator, solvent and dispersing agent etc..Coating agent containing ultraviolet absorbing agent can be by utilizing known side
Ultraviolet absorbing agent and additive as needed etc. are dissolved or dispersed in resin component and obtain by method.For containing ultraviolet
For aforementioned ultraviolet absorbing agent or UV blockers in the coating agent of light absorbers, in terms of adjusting ultraviolet ray transmissivity
It may include amount appropriate, on the basis of the amount of the coating agent containing ultraviolet absorbing agent, preferably 0.1~50 mass % is more excellent
It is selected as 1~30 mass %.
Ultra-violet solidified monomer or oligomer or electronic beam curing monomer or oligomer are not particularly limited, only
If have can by the monomer or oligomer of the group that the irradiation of ultraviolet light or electron beam crosslinks can, it is preferable to use
Monomer or oligomer with the group in the group being made of acryloyl group, methylacryloyl and oxetanyl.
Organic layer containing ultraviolet absorbing agent will preferably make epoxy (methyl) acrylate, carbamate (methyl) acrylate
(urethane (meth) acrylate), isocyanuric acid (methyl) acrylate, pentaerythrite (methyl) acrylate, three hydroxyl first
It is more than 2 functions in base propane (methyl) acrylate, ethylene glycol (methyl) acrylate, polyester (methyl) acrylate etc.
Macromolecule obtained from monomer with acryloyl group or methylacryloyl is crosslinked is as principal component.For these 2 officials
For the monomer with acryloyl group or methylacryloyl more than energy, two or more can be mixed and used, in addition, can also
It mixes (methyl) acrylate of 1 function and uses.
The commercially available product of representative as the coating agent containing ultraviolet absorbing agent can enumerate TOYO INK CO., LTD. system
Lioduras (registered trademark) TYN, AICA Kogyo Co., Ltd. Z-735-27L (containing particle), (strain) ADEKA system
KRX-705-6 etc..
As the forming method of the organic layer containing ultraviolet absorbing agent, can enumerate such as the method based on coating.Make
For the example of the method based on coating, the various coating methods used in the past, such as spraying coating, spin coating, stick painting, curtain can be enumerated
The side such as formula coating, infusion process, air doctor blade method, sliding coating, hopper coating, reverse roll coating, intaglio plate coating, extrusion coated
Method.It is preferred that the coating agent containing ultraviolet absorbing agent is coated on inorganic thin film layer, then make it dry, passes through as needed
The irradiation of ultraviolet light or electron beam solidify being formed.
The thickness of organic layer containing ultraviolet absorbing agent is preferably 10~10000nm.Having containing ultraviolet absorbing agent
The upper limit of the thickness of machine layer is more preferably 8000nm, further preferably 7000nm.Organic layer containing ultraviolet absorbing agent
The lower limit of thickness is more preferably 50nm, further preferably 100nm.In addition, for the organic layer containing ultraviolet absorbing agent
For thickness, according to the ultraviolet absorbing agent, resin component or the coating agent containing ultraviolet absorbing agent etc. for being included, preferably
10~5000nm, more preferably 50~5000nm, further preferably 100~5000nm.
(organic layer B)
Gas barrier film can have organic layer B in the outermost layer of gas barrier film.Organic layer B can be made only in
One face of gas barrier film, also may be formed at two sides.As organic layer B, delustring oxidant layer, protective layer, antistatic can be enumerated
Layer, closely sealed improvement layer, light shield layer, anti-reflection layer, hard conating, stress relaxation layer, anti-fog layer, stain-proofing layer, is printed smoothing layer
Layer and adhesive layer etc..
(gas barrier film)
For gas barrier film of the invention, the light transmittance at wavelength 380nm is 20% or less.It as a result, can be to
Gas barrier film assigns light resistance, the UV for more leaning on the device inside of lower layer than gas barrier film can be inhibited to deteriorate, alternatively, energy
Inhibit the UV deterioration of gas barrier film itself.Light transmittance at the wavelength 380nm of gas barrier film of the invention is preferably
15% hereinafter, more preferably 10% hereinafter, further preferably 5% or less.In the present invention, the light transmittance at wavelength 380nm makes
With spectrophotometer (Japan light splitting (strain) UV, visible light near infrared spectrometer V-670 processed) measurement.
The layer structure of gas barrier film of the invention is not particularly limited, as long as stacking gradually substrate layer, inorganic thin
Structure made of film layer, the organic layer containing ultraviolet absorbing agent, the example of layer structure not limited to the following.As layer knot
The example of structure, specifically, can be substrate layer/inorganic thin film layer/organic layer containing ultraviolet absorbing agent three-decker；
Flexible substrate/organic layer A/ inorganic thin film layer/organic layer containing ultraviolet absorbing agent, organic layer A/ flexible substrate/inorganic thin
Film layer/the organic layer containing ultraviolet absorbing agent, inorganic thin film layer/flexible substrate/inorganic thin film layer/contain ultraviolet absorbing agent
Organic layer, the flexible substrate/inorganic thin film layer/organic layer containing ultraviolet absorbing agent/organic layer B, organic layer B/ flexibility base
4 layers of structure of material/inorganic thin film layer/organic layer containing ultraviolet absorbing agent；Flexible substrate/organic layer A/ inorganic thin film layer/
Organic layer containing ultraviolet absorbing agent/organic layer B, inorganic thin film layer/flexible substrate/organic layer A/ inorganic thin film layer/contain
5 layers of structure such as organic layer of ultraviolet absorbing agent；Organic layer B/ inorganic thin film layer/flexible substrate/organic layer A/ inorganic thin film layer/
Organic layer containing ultraviolet absorbing agent, inorganic thin film layer/organic layer A/ flexible substrate/organic layer A/ inorganic thin film layer/contain
The organic layer of ultraviolet absorbing agent, inorganic thin film layer/organic layer A/ flexible substrate/organic layer A/ inorganic thin film layer/containing ultraviolet
The organic layer of light absorbers/organic layer B, organic layer B/ inorganic thin film layer/organic layer A/ flexible substrate/organic layer A/ inorganic thin film
Layer/the organic layer containing ultraviolet absorbing agent, organic layer B/ inorganic thin film layer/organic layer A/ flexible substrate/organic layer A/ are inorganic
The structure of 6 layers or more of the film layer/organic layer containing ultraviolet absorbing agent/organic layer B etc..It, can be with other than layer above-mentioned
Further there is layer C.As such layer C, such as organic layer containing colorant can be enumerated, anti-exudation layer, anti-reflection layer, glued
Close layer, transparency conducting layer, infrared ray blocking layer, vacuum ultraviolet solidification organic layer etc..
Static friction system for gas barrier film, between a surface of gas barrier film and another surface
Number is 0.85 or more and 2.0 or less.
For confficient of static friction, the gas barrier film with the upper surface and the lower surface is divided into 2, so that the
The upper surface of 1 gas barrier film and the mode of the following table face contact of the 2nd gas barrier film measure confficient of static friction i.e.
It can.Confficient of static friction can be surveyed according to the gradient method of JIS P 8147, in the environment of temperature is 23 DEG C, humidity is 50RH%
It is fixed.
In order to adjust confficient of static friction, the surface roughness on the two sides of regulating gas barrier film.For example, inorganic thin
In the case that film layer is arranged on the only one face of substrate layer, the surface roughness and base of the exposed surface of inorganic thin film layer are adjusted
The surface roughness of the exposed surface of material layer.In the case that inorganic thin film layer is arranged on two faces of substrate layer, one is adjusted
The surface roughness of exposed surface of the inorganic thin film layer of the surface roughness and another party of the exposed surface of the inorganic thin film layer of side is
It can.If increasing the surface roughness at least one face of gas barrier film, there are the confficients of static friction between surface back side to subtract
Small tendency.
The surface roughness of inorganic thin film layer for example can be according to the indoor pressure of vacuum under the membrance casting condition of inorganic thin film layer
The conditions such as power (vacuum degree), film forming thickness, inorganic film forming layer composition and change.In addition, the surface of inorganic thin film layer is thick
Rugosity can also by adjust the surface roughness for the flexible substrate for becoming substrate, be configured in inorganic thin film layer and flexible substrate it
Between the surface roughness of middle layer adjust.
In order to adjust the surface roughness of flexible substrate, the processing such as sided corona treatment is carried out.
The arithmetic average roughness Ra on the surface of inorganic thin film layer can be 3nm or more.Arithmetic average roughness Ra can lead to
It crosses following manner to obtain: gas barrier film is fitted in into the epoxy substrate with adhesive, then with white interference microscope
Its surface is observed.So-called arithmetic average roughness Ra, refers to the arithmetic mean roughness based on JIS B 0601: 2001
Degree.
In addition, in gas barrier film of the present embodiment, by the 50mm square cut out from gas barrier film
When part is loaded with the central portion of the part and the tangent mode of horizontal plane, the average value of the distance of horizontal plane to the quadrangle upwarped
For 2mm or less.
The average value can measure in the following way.Firstly, being kept under conditions of temperature is 23 DEG C, humidity is 50RH%
Gas barrier film 48 hours.Next, cutting out the part of 50mm square from the gas barrier film, sample is obtained.With sample
Central portion and the tangent mode of horizontal plane, sample is placed on horizontal plane, obtain total 4 horizontal planes to quadrangle away from
From.Finally, obtaining the average value of above-mentioned 4 distances.
In order to reduce the warpage of gas barrier film to improve flatness, each inorganic thin film layer of surface back side can be made
Stress equilibrium, perhaps make the stress equilibrium of the inorganic thin film layer in a face and coat below or reduce inorganic thin
The residual stress of film layer itself, or combine them, make the stress equilibrium on two sides.When stress can be formed by inorganic thin film layer
Film pressure, film thickness, coat formation when cure shrinkage degree etc. adjust.
Steam permeability of gas barrier film under the conditions of 40 DEG C, 90%RH can be 0.1g/m2/ day is hereinafter, can
Think 0.001g/m2Below/day.Steam permeability can according to ISO/WD 15106-7 (Annex C), utilize Ca corrosion test
Method measures.
Gas barrier film of the invention can be by manufacturing substrate layer, inorganic thin film layer respectively and containing ultraviolet absorbing agent
Organic layer and be bonded method, inorganic thin film layer and the organic layer containing ultraviolet absorbing agent are formed on substrate layer
Method etc. manufactures.Inorganic thin film layer preferably by using glow discharge plasma, utilize vacuum film formation known to CVD method etc.
Method in flexible substrate or be laminated on the organic layer A on flexible substrate surface formed to manufacture.Known side can also be used
Method forms the organic layer containing ultraviolet absorbing agent, organic layer B in addition on the stacked film obtained as described above.It is inorganic
Film layer preferably passes through continuous film-forming process and is formed, for example, the substrate of strip is more preferably continuously transmitted on one side, on one side at it
On be continuously formed inorganic thin film layer.Specifically, take-up roll, monogon can be sent to from outlet roller for flexible substrate on one side
At inorganic thin film layer.Then, substrate can be inversely transmitted, thus further from top by inverting outlet roller and take-up roll
Form inorganic thin film layer.
Gas barrier film of the invention is the film of barrier properties for gases and excellent in light-resistance, even if especially trying in light resistance
Make in its curved situation after testing, the decline of barrier properties for gases is also inhibited.Gas barrier film of the invention can be used for
There must be the packaging applicationss of barrier properties for gases, food, industrial goods, pharmaceuticals etc..In addition, the present invention also provides have this
The flexible electronic device of the gas barrier film of invention.Gas barrier film of the invention also can be used as more demanding gas resistance
Every the soft of the flexible electronic devices such as liquid crystal display element, solar battery and organic el display of property (such as flexible display)
Property substrate use.Using gas barrier film of the invention as the flexible base board of electronic device in use, can be in the present invention
Gas barrier film on directly form element, in addition, element can also be formed on other substrates, be then superimposed on this from top
The gas barrier film of invention.
Hereinafter, illustrating the present invention in further detail by specific embodiment.
Embodiment
<film thickness of inorganic thin film layer, organic layer A and the organic layer containing ultraviolet absorbing agent>
Inorganic thin film layer, organic layer A or the organic layer containing ultraviolet absorbing agent are formed in flexible substrate, are used (strain)
Small slope studies made Surfcorder ET200, and the difference of height measurement in do not formed a film portion and film forming portion finds out the film thickness of each layer
(T)。
<the thickness direction XPS depth profiling of inorganic thin film layer measures>
The atomicity ratio of the thickness direction of the inorganic thin film layer of gas barrier film is surveyed using X-ray photoelectron spectroscopy
It is fixed.
Etch ion type: argon (Ar+)
Etch-rate (SiO2Heat oxide film scaled value): 0.05nm/sec
Etching interval (SiO2Scaled value): 10nm
X-ray photoelectron spectroscopy device: Thermo Fisher Scientific corporation, type designation " VG Theta
Probe”
X-ray irradiation: monocrystalline is divided AlK α
The hot spot and its size of X-ray: the ellipse of 800 400 μm of μ ms.
<infrared spectrum measurement (ATR method) of inorganic thin film layer surface>
In the infrared spectrum measurement of the inorganic thin film layer surface of stacked film, use germanium crystal as prism using having
Fourier transformation type infrared spectrophotometer (Japan's light splitting (strain) system, the FT/IR- of ATR attachment (PIKE MIRacle)
460Plus) it is measured.It should be noted that by using the cyclic annular cycloolefin film (Japan as flexible substrate
ZEONCORPORATION system, Zeonor ZF 16) it is used as substrate, inorganic thin film layer is formed in aforementioned substrates, to obtain red
The stacked film of external spectrum measurement.
<barrier properties for gases>
Under conditions of temperature is 40 DEG C, humidity is 90%RH, calcium etch (Japanese Unexamined Patent Publication 2005-283561 is utilized
The method recorded in bulletin) measurement barrier properties for gases, find out the steam permeability of gas barrier film.
(Production Example 1 of inorganic thin film layer)
Flexible substrate is installed on the indoor outlet roller of vacuum, makes to become 1 × 10 in vacuum chamber-3Then Pa is hereinafter, scratching
Property substrate on carry out inorganic thin film layer film forming.In the plasma CVD equipment used to form inorganic thin film layer, one
While be adjacent to substrate layer respectively in a pair of of roll electrode surface transmits substrate layer on one side, make to generate plasma between a pair of electrodes,
Make raw material decomposes in plasma, forms inorganic thin film layer in flexible substrate.For a pair of electrodes above-mentioned, with magnetic flux
The mode that density is got higher in electrode and flexible substrate surface in electrode interior configured with magnetite, when plasma generates, wait from
Daughter is strapped in high-density in electrode and flexible substrate.When carrying out the film forming of inorganic thin film layer, the film-forming region Xiang Chengwei
Interelectrode space in import hexamethyldisiloxane gas 100sccm (Standard Cubic Centimeter per
Minute (standard milliliters per minute), 0 DEG C, 1 standard atmospheric pressure), oxygen 1400sccm, to supplying 1.2kW, frequency between electrode roller
The alternating current of rate 70kHz, is discharged and generates plasma.Next, with the pressure near the indoor exhaust outlet of vacuum at
Capacity is adjusted for the mode of 5Pa, then forms fine and close inorganic thin film layer in flexible substrate using plasma CVD method.
For the inorganic thin film layer of obtained gas barrier film, infrared spectrum measurement is carried out under the foregoing conditions.By
To infrared absorption spectrum find out in 950~1050cm-1Locate existing peak intensity (I1) and in 1240~1290cm-1Place exists
Peak intensity (I2) absorption intensity ratio (I2/I1) when, I2/I1=0.04.In addition, finding out in 950~1050cm-1Existing for place
Peak intensity (I1) and in 770~830cm-1Locate existing peak intensity (I3) absorption intensity ratio (I3/I1) when, I3/I1=0.40.
In addition, finding out in 770~830cm-1Locate existing peak intensity (I3) and in 870~910cm-1Locate existing peak intensity
Spend (I4) absorption intensity ratio (I4/I3) when, I4/I3=0.88.
It should be noted that do not change implementing aftermentioned sided corona treatment for infrared absorption spectrum,
Show absorption intensity ratio above-mentioned.For obtained gas barrier film 1, the 90% of the film thickness direction of inorganic thin film layer
In above region, sequence from atomicity is than a big side as oxygen, silicon and carbon, in addition, with 10 or more film thickness side
To carbon profile extreme value, and the difference of the maxima and minima of the atomicity ratio of the carbon in carbon profile is absolute
Value is 0.02 or more.
It is found out in addition, carrying out the measurement of XPS depth profiling by the distribution curve of obtained silicon atom, oxygen atom and carbon atom
Then the average atomic concentration of each atom in a thickness direction calculates average atom number ratio C/Si and O/Si, as a result, average original
Subnumber ratio C/Si=0.27, O/Si=1.76.
The obtained inorganic thin film layer in gas barrier film with a thickness of 320nm.
(Production Example 2 of inorganic thin film layer)
The supply amount 900sccm for making oxygen, the alternating current 0.6kW for making to supply between electrode roller, it is indoor with vacuum
Pressure near exhaust outlet adjusts capacity as the mode of 1Pa, in addition to this, operates in the same way with Production Example 1, in substrate layer
Upper formation inorganic thin film layer.
For the inorganic thin film layer of obtained gas barrier film, infrared spectrum measurement is carried out under the foregoing conditions.By
To infrared absorption spectrum find out in 950~1050cm-1Locate existing peak intensity (I1) and in 1240~1290cm-1Place exists
Peak intensity (I2) absorption intensity ratio (I2/I1) when, I2/I1=0.03.In addition, finding out in 950~1050cm-1Existing for place
Peak intensity (I1) and in 770~830cm-1Locate existing peak intensity (I3) absorption intensity ratio (I3/I1) when, I3/I1=0.36.
In addition, finding out in 770~830cm-1Locate existing peak intensity (I3) and in 870~910cm-1Locate existing peak intensity
Spend (I4) absorption intensity ratio (I4/I3) when, I4/I3=0.84.
It should be noted that do not change implementing aftermentioned sided corona treatment for infrared absorption spectrum,
Show absorption intensity ratio above-mentioned.For obtained gas barrier film 1, the 90% of the film thickness direction of inorganic thin film layer
In above region, sequence from atomicity is than a big side as oxygen, silicon and carbon, in addition, with 10 or more film thickness side
To carbon profile extreme value, and the difference of the maxima and minima of the atomicity ratio of the carbon in carbon profile is absolute
Value is 0.02 or more.
It is found out in addition, carrying out the measurement of XPS depth profiling by the distribution curve of obtained silicon atom, oxygen atom and carbon atom
Then the average atomic concentration of each atom in a thickness direction calculates average atom number ratio C/Si and O/Si, as a result, average original
Subnumber ratio C/Si=0.30, O/Si=1.73.
The obtained inorganic thin film layer in gas barrier film with a thickness of 250nm.
(embodiment 1)
Implement on cyclo-olefin-polymer films (COP film, Japanese ZEON CORPORATION system, ZF16, with a thickness of 100 μm)
Then sided corona treatment is coated with coating agent 1 (TOYOCHEM CO., LTD. system, LIODURAS (registered trademark) using gravure coating process
TYAB500LC3NS contains particle), it is 500mJ/cm in accumulated light after 100 DEG C of progress drying in 3 minutes2Under conditions of into
Row ultraviolet light irradiates (USHIO INC. system, SP-9), forms slippery layer as the organic layer A1 with a thickness of 1.5 μm.Next,
Implement sided corona treatment on the COP substrate of the opposite side of the coated face of organic layer A1, then, is coated with and is coated using gravure coating process
Agent 2 (East Asia synthesizes (strain) system, ARONIX (registered trademark) UV3701), after 100 DEG C of progress drying in 3 minutes, in accumulated light
For 500mJ/cm2Under conditions of carry out ultraviolet light irradiation, form planarization layer as the organic layer A2 with a thickness of 1.8 μm, obtain
To flexible substrate.
On the organic layer A1 of obtained flexible substrate, inorganic thin film layer is formed under conditions of Production Example 1, in organic layer
On A2, inorganic thin film layer is formed under conditions of Production Example 2.Next, in the organic layer A1 for the film for foring inorganic thin film layer
In the most surface of side, the organic layer containing ultraviolet absorbing agent is formed, manufactures gas barrier film.Contain ultraviolet absorbing agent
In the formation of organic layer, sided corona treatment is carried out to the slippery layer surface side for the film for foring inorganic thin film layer and is then applied using wet type
Cloth method is coated with coating agent 3 ((strain) ADEKA system, KRX-705-6)
500mJ/cm2Under conditions of carry out ultraviolet light irradiation (USHIO INC. system, SP-9), formed with a thickness of 5.5 μm containing ultraviolet
The organic layer of light absorbers.
In addition, temperature is 40 DEG C, the humidity of low humidity side is 0%RH, high humility side in obtained gas barrier film
Steam permeability under conditions of humidity is 90%RH is 2 × 10-3g/(m2It).
(embodiment 2)
Make the organic layer containing ultraviolet absorbing agent with a thickness of 6.5 μm, in addition to this, operate similarly with example 1,
Manufacture gas barrier film.
In addition, temperature is 40 DEG C, the humidity of low humidity side is 0%RH, high humility side in obtained gas barrier film
Steam permeability under conditions of humidity is 90%RH is 2 × 10-3g/(m2It).
(comparative example 1)
It is real on COP film (Japanese ZEON CORPORATION system, Zeonor (registered trademark) ZF 16, with a thickness of 100 μm)
Sided corona treatment is applied, then (AICA Kogyo Co., Ltd. system, Z-735-27L contain using gravure coating process coating coating agent 4
Particle), it is 150mJ/cm in accumulated light after 100 DEG C of progress drying in 2 minutes2Under conditions of carry out ultraviolet light irradiation, formed
With a thickness of 3.5 μm of the organic layers for containing ultraviolet absorbing agent as slippery layer.Next, in having containing ultraviolet absorbing agent
Implement sided corona treatment on the COP substrate of the opposite side of the coated face of machine layer, then utilizes gravure coating process coating coating agent 2 (east
Asia synthesis (strain) system, ARONIX (registered trademark) UV3701), after 100 DEG C of progress drying in 3 minutes, be in accumulated light
500mJ/cm2Under conditions of carry out ultraviolet light irradiation, form planarization layer as the organic layer A2 with a thickness of 1.8 μm.
On the organic layer containing ultraviolet absorbing agent of obtained substrate, formed under conditions of Production Example 1 inorganic thin
Film layer forms inorganic thin film layer on organic layer A2 under conditions of Production Example 2, manufactures gas barrier film.
(comparative example 2)
Make the organic layer containing UV protection absorbent with a thickness of 4.5 μm, in addition to this, operated in the same way with comparative example 1,
Manufacture gas barrier film.
(comparative example 3)
In addition to this not formed organic layer containing ultraviolet absorbing agent operates similarly with example 1, manufacture gas
Barrier film.
For gas barrier film obtained in Examples 1 to 2 and comparative example 1~3, using spectrophotometer, (day is well-behaved
Light (strain) UV, visible light near infrared spectrometer V-670 processed), measure the light transmittance (Tt) at 380nm.Obtained result is shown
In table 1.
By gas barrier film obtained in Examples 1 to 2 and comparative example 1~3 temperature be 40 DEG C, illumination 765W/
m2Light fastness test machine (DAIPLA WINTES CO., LTD. system, SWM-03F) in place 168 hours, thus carry out fast light
Property test.Gas barrier film is configured in such a way that light is from the incidence of the slippery layer surface side of gas barrier film to be tested.
It, will be on the mandrel that radius is 4mm after 1 circle of winding in addition, for the gas barrier film after light fastness test
The deteriorations such as not peeling-off on barrier layer, crackle, coloring, appearance do not occur the area changed be 100% the case where be evaluated as
" A ", appearance is not occurred the area changed be 80% more than and less than 100% the case where be evaluated as " B ", appearance is not become
The case where area of change is less than 80% is evaluated as " C ".It the results are shown in table 1.
[table 1]
As shown in table 1 like that, for gas barrier film of the invention shown in the embodiment 1 and 2, due to inorganic
There is the organic layer containing ultraviolet absorbing agent, therefore, even if inorganic thin film layer is not also sent out after light fastness test in film layer
Raw deterioration, has adaptation after good bending.For comparative example 1 and 2, although the light transmittance at wavelength 380nm is low,
After light fastness test, inorganic thin film layer is deteriorated, and adaptation is low after bending.Accordingly, it is to be understood that gas of the invention hinders
It can suitably be used in the devices such as display device every property film.
Description of symbols
11 outlet rollers
21,22,23,24 transfer roller
31,32 one-tenth deflector rolls
41 gas supply pipes
51 plasma power supplys
61,62 field generator for magnetic
71 take-up rolls
100 films
Claims (11)
1. gas barrier film successively has the substrate layer including at least flexible substrate, inorganic thin film layer, inhales containing ultraviolet light
Receive the organic layer of agent, wherein
The inorganic thin film layer contains silicon atom, oxygen atom and carbon atom,
Light transmittance at the 380nm of the gas barrier film is 20% or less.
2. gas barrier film as described in claim 1, wherein be in opposite with the organic layer side containing ultraviolet absorbing agent
The surface of the substrate layer of side has other inorganic thin film layer.
3. gas barrier film as claimed in claim 1 or 2, wherein in substrate layer, at least one surface of flexible substrate
With organic layer A.
4. gas barrier film according to any one of claims 1 to 3, wherein organic layer A is selected from by slippery layer and flat
Layer in the group of smooth layer composition.
5. gas barrier film as described in any one of claims 1 to 4, wherein the phase for including in the inorganic thin film layer
The atomicity of carbon atom for the sum of silicon atom, oxygen atom and carbon atom is than on the thickness direction of inorganic thin film layer
Continuously change.
6. such as gas barrier film according to any one of claims 1 to 5, wherein for the inorganic thin film layer, nothing
The average atom number ratio of the carbon atom (C) for silicon atom (Si) in machine film layer in the range of formula (1),
0.10 < C/Si < 0.50 (1).
7. such as gas barrier film according to any one of claims 1 to 6, wherein respectively indicating the inorganic thin film layer
Film thickness direction the distance away from the inorganic thin film layer surface, opposite with include in the inorganic thin film layer at each distance
The atomicity of silicon for the sum of silicon atom, oxygen atom and carbon atom than, oxygen atomicity than between the atomicity ratio of, carbon
The silicon distribution curve of relationship, in oxygen distribution curve and carbon profile, meet condition (i) and (ii),
(i) atomicity of silicon is than the atomicity of the atomicity when carbon of, oxygen than the film thickness direction in the inorganic thin film layer
Meet the condition of formula (5) expression in 90% or more region,
The atomicity ratio (5) of the atomicity ratio > carbon of the atomicity ratio > silicon of oxygen
(ii) carbon profile has at least one extreme value.
8. device, comprising any in claim 1~7 in such a way that the coat containing ultraviolet absorbing agent becomes outermost
Gas barrier film described in.
9. such as gas barrier film according to any one of claims 1 to 7, wherein utilize the ATR method pair of infrared spectrum measurement
When the surface of the inorganic thin film layer is measured, in 950~1050cm-1Locate existing peak intensity (I1), with 1240~
1290cm-1Locate existing peak intensity (I2) intensity ratio in the range of formula (2),
0.01≤I2/I1< 0.05 (2).
10. the gas barrier film as described in any one of claim 1~7 and 9, wherein utilize the ATR of infrared spectrum measurement
When method is measured the inorganic thin film layer surface, in 950~1050cm-1Locate existing peak intensity (I1), with 770~
830cm-1Locate existing peak intensity (I3) intensity ratio in the range of formula (3),
0.25≤I3/I1≤0.50 (3)。
11. the gas barrier film as described in any one of claim 1~7,9 and 10, wherein utilize infrared spectrum measurement
When ATR method is measured the inorganic thin film layer surface, in 770~830cm-1Locate existing peak intensity (I3), with 870~
910cm-1Locate existing peak intensity (I4) intensity ratio in the range of formula (4),
0.70≤I4/I3< 1.00 (4).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-220807 | 2016-11-11 | ||
| JP2016220807 | 2016-11-11 | ||
| PCT/JP2017/039903 WO2018088352A1 (en) | 2016-11-11 | 2017-11-06 | Gas barrier film and device comprising same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109890607A true CN109890607A (en) | 2019-06-14 |
Family
ID=62110696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780065240.1A Pending CN109890607A (en) | 2016-11-11 | 2017-11-06 | Gas barrier film and device comprising it |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6983040B2 (en) |
| KR (1) | KR102446746B1 (en) |
| CN (1) | CN109890607A (en) |
| TW (1) | TW201829190A (en) |
| WO (1) | WO2018088352A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020209181A1 (en) * | 2019-04-10 | 2020-10-15 | 株式会社小糸製作所 | Vehicular resin member |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006297737A (en) * | 2005-04-20 | 2006-11-02 | Fuji Photo Film Co Ltd | Gas-barrier film |
| CN101932436A (en) * | 2008-01-31 | 2010-12-29 | 三菱树脂株式会社 | The gas barrier film that has excellent weather resistance |
| CN102001201A (en) * | 2009-08-26 | 2011-04-06 | 富士胶片株式会社 | Laminate film and composite film |
| JP2012076386A (en) * | 2010-10-04 | 2012-04-19 | Konica Minolta Holdings Inc | Ultraviolet-shieldable film and organic electronic device obtained by using the same |
| CN104981345A (en) * | 2013-02-06 | 2015-10-14 | 东洋纺株式会社 | Laminate film |
| TW201615878A (en) * | 2014-09-08 | 2016-05-01 | 住友化學股份有限公司 | Laminated film and flexible electronic device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3614910B2 (en) | 1995-01-09 | 2005-01-26 | 株式会社きもと | Weatherproof moisture-proof film |
| JP2004243675A (en) * | 2003-02-14 | 2004-09-02 | Toppan Printing Co Ltd | Transparent barrier packaging material having ultraviolet screening property |
| JP5540803B2 (en) | 2010-03-23 | 2014-07-02 | コニカミノルタ株式会社 | Method for producing gas barrier film |
| JP5565129B2 (en) | 2010-06-22 | 2014-08-06 | コニカミノルタ株式会社 | Gas barrier film and organic element device using the same |
| JP5927943B2 (en) | 2012-01-31 | 2016-06-01 | 大日本印刷株式会社 | GAS BARRIER FILM, MANUFACTURING METHOD THEREOF, AND DEVICE USING GAS BARRIER FILM |
| JP6126884B2 (en) | 2013-03-26 | 2017-05-10 | リンテック株式会社 | Curable resin composition, resin film, gas barrier film, and electronic device |
| JP6070411B2 (en) | 2013-05-27 | 2017-02-01 | コニカミノルタ株式会社 | GAS BARRIER FILM, GAS BARRIER FILM MANUFACTURING METHOD, AND ORGANIC ELECTROLUMINESCENT ELEMENT |
| WO2015099078A1 (en) * | 2013-12-25 | 2015-07-02 | 日本ゼオン株式会社 | Laminated film, and method for manufacturing composite film |
| TWI648892B (en) * | 2013-12-26 | 2019-01-21 | 日商琳得科股份有限公司 | Sheet-like sealing material, sealing sheet, electronic device sealing body, and organic EL element |
-
2017
- 2017-11-06 CN CN201780065240.1A patent/CN109890607A/en active Pending
- 2017-11-06 TW TW106138289A patent/TW201829190A/en unknown
- 2017-11-06 KR KR1020197016473A patent/KR102446746B1/en active IP Right Grant
- 2017-11-06 WO PCT/JP2017/039903 patent/WO2018088352A1/en active Application Filing
- 2017-11-07 JP JP2017214932A patent/JP6983040B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006297737A (en) * | 2005-04-20 | 2006-11-02 | Fuji Photo Film Co Ltd | Gas-barrier film |
| CN101932436A (en) * | 2008-01-31 | 2010-12-29 | 三菱树脂株式会社 | The gas barrier film that has excellent weather resistance |
| CN102001201A (en) * | 2009-08-26 | 2011-04-06 | 富士胶片株式会社 | Laminate film and composite film |
| JP2012076386A (en) * | 2010-10-04 | 2012-04-19 | Konica Minolta Holdings Inc | Ultraviolet-shieldable film and organic electronic device obtained by using the same |
| CN104981345A (en) * | 2013-02-06 | 2015-10-14 | 东洋纺株式会社 | Laminate film |
| TW201615878A (en) * | 2014-09-08 | 2016-05-01 | 住友化學股份有限公司 | Laminated film and flexible electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018083417A (en) | 2018-05-31 |
| KR102446746B1 (en) | 2022-09-23 |
| TW201829190A (en) | 2018-08-16 |
| KR20190084279A (en) | 2019-07-16 |
| WO2018088352A1 (en) | 2018-05-17 |
| JP6983040B2 (en) | 2021-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5394867B2 (en) | Gas barrier film and gas barrier film | |
| US10780675B2 (en) | Gas barrier film, optical film, and flexible display | |
| CN105873763B (en) | Stacked film and flexible electronic device | |
| CN104203562B (en) | The manufacture method of gas barrier film and gas barrier film | |
| WO2013147119A1 (en) | Gas-barrier film and process for producing same, and gas-barrier laminate | |
| WO2014203892A1 (en) | Gas barrier film and method for producing same | |
| JPWO2014123201A1 (en) | Gas barrier film and method for producing the same | |
| JP2023073287A (en) | Optical diffusive barrier film | |
| JP7294841B2 (en) | laminated film | |
| JP7211740B2 (en) | Gas barrier films and flexible electronic devices | |
| KR101523747B1 (en) | Thin film type hard coating film and method for manufacturing the same | |
| JP2005256061A (en) | Laminate | |
| CN109890607A (en) | Gas barrier film and device comprising it | |
| CN109952198A (en) | Laminated body and device comprising it | |
| JP6354302B2 (en) | Gas barrier film | |
| WO2015053189A1 (en) | Gas barrier film and process for manufacturing same | |
| WO2021106736A1 (en) | Laminated film | |
| WO2016159206A1 (en) | Gas barrier film and method for manufacturing same | |
| WO2020085248A1 (en) | Laminated body, flexible electronic device, and laminated-body manufacturing method | |
| EP3718763A1 (en) | Barrier film | |
| JP2016124123A (en) | Laminate | |
| WO2016185938A1 (en) | Film laminate body, method for manufacturing same, and film-forming device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190614 |