CN109871045A - A kind of Action of Superhigh Frequency Vibration active control device of nanometer of phonon crystal girder construction - Google Patents
A kind of Action of Superhigh Frequency Vibration active control device of nanometer of phonon crystal girder construction Download PDFInfo
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- CN109871045A CN109871045A CN201910182759.9A CN201910182759A CN109871045A CN 109871045 A CN109871045 A CN 109871045A CN 201910182759 A CN201910182759 A CN 201910182759A CN 109871045 A CN109871045 A CN 109871045A
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- 239000013078 crystal Substances 0.000 title claims abstract description 73
- 238000010276 construction Methods 0.000 title claims abstract description 68
- 230000001133 acceleration Effects 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 26
- 239000013013 elastic material Substances 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 7
- 238000010168 coupling process Methods 0.000 abstract description 7
- 238000005859 coupling reaction Methods 0.000 abstract description 7
- 230000006835 compression Effects 0.000 abstract description 2
- 238000007906 compression Methods 0.000 abstract description 2
- 230000008092 positive effect Effects 0.000 abstract description 2
- 230000001737 promoting effect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
The present invention relates to the Action of Superhigh Frequency Vibration active control devices of a kind of nanometer of phonon crystal girder construction, comprising: phonon crystal girder construction；The phonon crystal girder construction is nanometer scale, and vibration control region is equipped in the phonon crystal girder construction；Power supply is connected with phonon crystal girder construction；Acceleration transducer is connected with phonon crystal girder construction；Multiple physical field control system, after vibration signal for sending acceleration transducer is handled, by suitable voltage, the temperature difference and plus load signal are output in phonon crystal girder construction, the present invention is by by size compression to nanometer scale, in the Rule adjusting based on power-electric-thermal coupling physical field to band gap, by combining acceleration transducer and multiple physical field control system, realize the active control of the hyper band vibration to nanometer phonon crystal girder construction, positive effect is played to the development for promoting Nano electro-mechanical system, new thinking is provided for the intelligent Application of Nano electro-mechanical system in engineering.
Description
Technical field
The invention belongs to vibration control technology fields, and in particular to one kind is based on nanometer phonon under multiple physical field coupling
The Action of Superhigh Frequency Vibration active control device of crystal girder construction.
Background technique
Control technology has extremely important status in national defence and civilian equal fields.Pass through a large amount of theories to the technology
And experimental study, conventional vibration control technology have been developed as complete set system and tend to be mature.In recent years, along with sound
The rise and development of sub- crystal structure, are obtained extensively based on all kinds of vibration control technologies derived from phonon crystal mentality of designing
Concern, corresponding technology also compare more.
Currently, the vibration control apparatus based on phonon crystal is the band gap frequency range amount that it can control in macro-size
Grade be usually from hertz (Hz) arrive megahertz (MHz), and can effectively realize gigahertz (GHz) or more hyper band vibrate
The phonon crystal device of control, which is generally required, is reduced to nanometer scale for size.
Along with the research of photonic crystal structure under multiple physical field coupling, corresponding active vibration control technology is also obtained
Obtained certain development.Wherein, power-electric-thermal coupling photonic crystal structure is based on the phase between mechanical field, electric field and temperature field
Mutually conversion is realized to the Effective Regulation of band gap, and is based further on each physical field and is realized master to band gap to the Rule adjusting of band gap
Dynamic control.But there is presently no act on the Action of Superhigh Frequency Vibration of lower nanometer phonon crystal girder construction actively based on power-electric-thermal coupling
The technology of control device.
Summary of the invention
It is a kind of right based on power-electric-thermal coupling physical field to provide the invention aims to overcome the deficiencies in the prior art
The Rule adjusting of band gap can be realized by combining acceleration transducer and multiple physical field control system to combine to nanometer sound
The Action of Superhigh Frequency Vibration active control of the nanometer phonon crystal girder construction of the active control of the Action of Superhigh Frequency Vibration of sub- crystal girder construction fills
It sets.
In order to achieve the above objectives, the technical solution adopted by the present invention is that: the Action of Superhigh Frequency Vibration of a kind of nanometer of phonon crystal girder construction
Active control device, comprising:
Phonon crystal girder construction；The phonon crystal girder construction is nanometer scale, is equipped in the phonon crystal girder construction
Vibration control region；
Power supply is connected with phonon crystal girder construction, for supplying the phonon crystal girder construction energy；
Acceleration transducer is connected with phonon crystal girder construction, for pick up arrive vibration control region at vibration signal it is concurrent
Give multiple physical field control system；
The multiple physical field control system being connected with acceleration transducer, the vibration signal for sending acceleration transducer
After being handled, suitable voltage, the temperature difference and plus load signal are output in phonon crystal girder construction, realized to superelevation
The active control of frequency vibration.
Further, the phonon crystal girder construction is arranged alternately by pure elastic material and piezoelectric material period and is formed.
Further, the pure elastic material is resin polymers material.
Further, the piezoelectric material is piezoelectric type polymer material.
Further, the connection type between the piezoelectric material and pure elastic material is rigid connection.
Further, the section of the phonon crystal girder construction includes but is not limited to rectangle/circle.
Further, the power supply is connected by lead with the piezoelectric material in phonon crystal girder construction.
Further, the multiple physical field control system include by the sequentially connected charge amplifier of lead, processor,
Signal generator and power amplifier.
Further, apply with vibration control region opposite side equipped with plus load in the phonon crystal girder construction
Place.
Further, at the power amplifier and plus load application, piezoelectric material and phonon crystal girder construction it
Between be respectively equipped with that plus load applies element, applied voltage applies element and the temperature difference and applies element.
Due to the application of the above technical scheme, compared with the prior art, the invention has the following advantages:
(1) it by the way that size compression to nanometer scale to be breached to the limitation to controllable frequency range is vibrated, realizes and shakes to hyper band
Dynamic active control.
(2) based on power-electric-thermal coupling physical field to the Rule adjusting of band gap, by combining acceleration transducer and more objects
Station control system is managed, the active control of the hyper band vibration to nanometer phonon crystal girder construction is realized.
(3) positive effect is played to the development for promoting Nano electro-mechanical system, is the intelligence of Nano electro-mechanical system in engineering
Using providing new thinking.
Detailed description of the invention
Technical scheme of the present invention is further explained with reference to the accompanying drawing:
Accompanying drawing 1 is the structural representation of the present invention；
Attached drawing 2 is that certain material parameter, geometric parameter and power-electric-thermal couple under field parameters, the corresponding band structure of the present invention
Figure；
Attached drawing 3 is that the variation of applied voltage originates to forbidden band and terminate the influence curve figure of frequency；
Attached drawing 4 is that the variation of the temperature difference originates to forbidden band and terminate the influence curve figure of frequency；
Attached drawing 5 is that the variation of plus load originates to forbidden band and terminate the influence curve figure of frequency；
Wherein: 1, phonon crystal girder construction；2, vibration control region；3, power supply；4, acceleration transducer；5, charge amplifier；
6, processor；7, signal generator；8, power amplifier；9, at plus load application；11, pure elastic material；12, piezoresistive material
Material；20, plus load applies element；21, applied voltage applies element；22, the temperature difference applies element.
Specific embodiment
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is described in further details.
Refering to attached drawing 1, the Action of Superhigh Frequency Vibration active control device of a kind of nanometer of phonon crystal girder construction of the present invention,
It include: phonon crystal girder construction 1；The phonon crystal girder construction 1 is nanometer scale, in the phonon crystal girder construction 1
Equipped with vibration control region 2；Power supply 3 is connected with phonon crystal girder construction 1, for supplying 1 energy of phonon crystal girder construction；Add
Velocity sensor 4 is connected with phonon crystal girder construction 1, for picking up the vibration signal at vibration control region 2 and being sent to
Multiple physical field control system；The multiple physical field control system being connected with acceleration transducer 4, for passing acceleration transducer 4
After the vibration signal brought is handled, suitable voltage, the temperature difference and plus load signal are output to phonon crystal beam
In structure 1, the active control to Action of Superhigh Frequency Vibration is realized.
Embodiment as a further preference, the phonon crystal girder construction 1 is by pure elastic material 11 and piezoelectric material 12
Period is arranged alternately and forms, wherein pure elastic material selects resin polymers material, such as epoxy resin etc., piezoelectric material
Select piezoelectric type polymer material, such as piezoelectric ceramics PZT-4 etc..
Embodiment as a further preference, the connection type between piezoelectric material 12 and pure elastic material 11 are that hardness connects
It connects, for example is glued or is bolted.
Embodiment as a further preference, the section of the phonon crystal girder construction 1 include but is not limited to rectangle/circle
Shape.
Embodiment as a further preference, the power supply 3 pass through multiple piezoelectricity in lead and phonon crystal girder construction 1
Material 12 is connected.
Embodiment as a further preference, the multiple physical field control system include passing through the sequentially connected charge of lead
Amplifier 5, processor 6, signal generator 7 and power amplifier 8.
Embodiment as a further preference is set with 2 opposite side of vibration control region in the phonon crystal girder construction 1
Have 9 at plus load application.
Embodiment as a further preference, acceleration transducer 4 is by being located at tail in lead and phonon crystal girder construction 1
The piezoelectric material 12 at end is connected.
Embodiment as a further preference, the power amplifier 8 and 9, piezoelectric material 12 at plus load application with
And it is respectively equipped with plus load between phonon crystal girder construction and applies element 20, applied voltage application element 21 and temperature difference application
Element 22.
Working principle: for piezoelectric material, element is applied by applied voltage, controllable voltage is applied to it；For entire
Structure applies element 22 by the temperature difference and applies controllable temperature difference；For at plus load application 5, member is applied by plus load
Part 20 applies controllable load；After acceleration transducer picks up the vibration signal at vibration control region 4, put by charge
Big device 5 is passed in processor 6, and processor 6 calculates suitable voltage, the temperature difference and plus load signal by analysis meter, and
Corresponding signal is output to plus load by signal generator 7 and power amplifier 8 and applies element 20, applied voltage applies member
Part 21 and the temperature difference apply in element 22, to realize the active control to the Action of Superhigh Frequency Vibration of nanometer phonon crystal girder construction.
Embodiment one:
Rectangle is selected in the section of phonon crystal girder construction, piezoelectric material and pure elastic material select respectively piezoelectric ceramics PZT-4 and
Epoxy resin.
The wherein material parameter of PZT-4 are as follows: density, elastic constant, piezoelectric constant, dielectric constant, hot-die amount constant；
The material constant of epoxy resin are as follows: density, elastic constant。
Geometric parameter in the present embodiment are as follows: the length of PZT-4, the length of epoxy resin, cut
Face width, depth of section。
When the relevant parameter of multiple physical field is set as: controllable voltage, controllable temperature differenceAnd controllable loadWhen, it can see from attached band structure figure shown in Fig. 2,8GHz or less frequency range, the structure is in 3.4-
Forbidden band (grey tab area) will be will appear between 6.7GHz frequency range, and will appear passband in remaining frequency range.Wherein, forbidden band indicates
The frequency range of transmitting is forbidden in vibration, and passband indicates the frequency range that vibration allows to transmit.
When changing each physics field parameters, i.e. controllable voltage, controllable temperature differenceWith
And controllable load, the frequency range of forbidden band and passband will be with the variation of physical field and changes, attached drawing
3,4,5 variations that applied voltage, the temperature difference and plus load is set forth originate to forbidden band and terminate the influence curve figure of frequency,
It, can be by forbidden band frequency range and passband frequency range and multiple physical field parameter component corresponding relationship by data processing.
When phonon crystal girder construction is vibrated, the vibration at vibration control region is picked up by acceleration transducer
Frequency range corresponding to signal further goes out to control the optimal multiple physical field ginseng of the frequency range by multiple physical field control system analysis
Number, and then voltage, the temperature difference and plus load signal are output in phonon crystal girder construction, to realize Action of Superhigh Frequency Vibration
Active control.
The above is only specific application examples of the invention, are not limited in any way to protection scope of the present invention.All uses
Equivalent transformation or equivalent replacement and the technical solution formed, all fall within rights protection scope of the present invention.
Claims (10)
1. the Action of Superhigh Frequency Vibration active control device of a kind of nanometer of phonon crystal girder construction characterized by comprising
Phonon crystal girder construction；The phonon crystal girder construction is nanometer scale, is equipped in the phonon crystal girder construction
Vibration control region；
Power supply is connected with phonon crystal girder construction, for supplying the phonon crystal girder construction energy；
Acceleration transducer is connected with phonon crystal girder construction, for pick up arrive vibration control region at vibration signal it is concurrent
Give multiple physical field control system；
The multiple physical field control system being connected with acceleration transducer, the vibration signal for sending acceleration transducer
After being handled, suitable voltage, the temperature difference and plus load signal are output in phonon crystal girder construction, realized to superelevation
The active control of frequency vibration.
2. the Action of Superhigh Frequency Vibration active control device of according to claim 1 nanometer of phonon crystal girder construction, feature exist
In: the phonon crystal girder construction is arranged alternately by pure elastic material and piezoelectric material period and is formed.
3. the Action of Superhigh Frequency Vibration active control device of according to claim 2 nanometer of phonon crystal girder construction, feature exist
In: the pure elastic material is resin polymers material.
4. the Action of Superhigh Frequency Vibration active control device of according to claim 2 nanometer of phonon crystal girder construction, feature exist
In: the piezoelectric material is piezoelectric type polymer material.
5. the Action of Superhigh Frequency Vibration active control device of according to claim 2 nanometer of phonon crystal girder construction, feature exist
In: the connection type between the piezoelectric material and pure elastic material is rigid connection.
6. the Action of Superhigh Frequency Vibration active control device of according to claim 1 nanometer of phonon crystal girder construction, feature exist
In: the section of the phonon crystal girder construction includes but is not limited to rectangle/circle.
7. the Action of Superhigh Frequency Vibration active control device of according to claim 2 nanometer of phonon crystal girder construction, feature exist
In: the power supply is connected by lead with the piezoelectric material in phonon crystal girder construction.
8. the Action of Superhigh Frequency Vibration active control device of according to claim 7 nanometer of phonon crystal girder construction, feature exist
In: the multiple physical field control system include by the sequentially connected charge amplifier of lead, processor, signal generator and
Power amplifier.
9. the Action of Superhigh Frequency Vibration active control device of according to claim 8 nanometer of phonon crystal girder construction, feature exist
In: it is equipped at plus load application in the phonon crystal girder construction with vibration control region opposite side.
10. the Action of Superhigh Frequency Vibration active control device of according to claim 9 nanometer of phonon crystal girder construction, feature exist
In: it is respectively equipped at the power amplifier and plus load application, between piezoelectric material and phonon crystal girder construction additional
Load applies element, applied voltage applies element and the temperature difference applies element.
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| CN201910182759.9A CN109871045B (en) | 2019-03-12 | 2019-03-12 | Ultrahigh frequency vibration active control device of nano phonon crystal beam structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112735367A (en) * | 2020-12-06 | 2021-04-30 | 北京工业大学 | Piezoelectric phonon crystal beam for actively adjusting vibration and wave propagation characteristics |
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2019
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| US5005678A (en) * | 1989-03-03 | 1991-04-09 | The Boeing Company | Method and apparatus for sensing and damping vibration |
| US5156460A (en) * | 1990-11-05 | 1992-10-20 | Sundstrand Corporation | Crystal temperature transducer |
| TW201121234A (en) * | 2009-12-02 | 2011-06-16 | Ind Tech Res Inst | Resonator and periodic structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112735367A (en) * | 2020-12-06 | 2021-04-30 | 北京工业大学 | Piezoelectric phonon crystal beam for actively adjusting vibration and wave propagation characteristics |
| CN112735367B (en) * | 2020-12-06 | 2023-04-25 | 北京工业大学 | Piezoelectric phonon crystal beam for actively adjusting vibration and wave propagation characteristics |
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