CN109871045B - Ultrahigh frequency vibration active control device of nano phonon crystal beam structure - Google Patents
Ultrahigh frequency vibration active control device of nano phonon crystal beam structure Download PDFInfo
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- CN109871045B CN109871045B CN201910182759.9A CN201910182759A CN109871045B CN 109871045 B CN109871045 B CN 109871045B CN 201910182759 A CN201910182759 A CN 201910182759A CN 109871045 B CN109871045 B CN 109871045B
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- 239000013013 elastic material Substances 0.000 claims description 11
- 239000002861 polymer material Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 3
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- 229920000647 polyepoxide Polymers 0.000 description 4
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Abstract
The invention relates to an ultra-high frequency vibration active control device of a nano phonon crystal beam structure, which comprises: phonon crystal beam structure; the phonon crystal beam structure is of nanometer magnitude, and a vibration control area is arranged on the phonon crystal beam structure; the power supply is connected with the phonon crystal beam structure; the acceleration sensor is connected with the phonon crystal beam structure; the multi-physical field control system is used for processing vibration signals transmitted by the acceleration sensor and outputting proper voltage, temperature difference and external load signals to the photonic crystal beam structure.
Description
Technical Field
The invention belongs to the technical field of vibration control, and particularly relates to an ultrahigh frequency vibration active control device based on a nano phonon crystal beam structure under the coupling action of multiple physical fields.
Background
The control technology has extremely important roles in the fields of national defense, civil use and the like. Through extensive theoretical and experimental research on this technology, traditional vibration control technology has evolved into a complete set of systems and is approaching maturity. In recent years, with the rising and development of phonon crystal structures, various vibration control technologies derived based on phonon crystal design ideas have been widely focused, and corresponding technologies are also relatively large.
At present, the photonic crystal-based vibration control device is in a macroscopic size, the band gap frequency range which can be controlled by the photonic crystal-based vibration control device is generally from hertz (Hz) to megahertz (MHz), and the photonic crystal-based vibration control device capable of effectively realizing the ultra-high frequency range vibration control above gigahertz (GHz) is generally required to shrink the size to the nanometer level.
Along with the research of phonon crystal structure under the coupling action of multiple physical fields, the corresponding vibration active control technology also obtains a certain development. The structure of the photonic crystal of force-electric-thermal coupling realizes effective regulation and control of the band gap based on the mutual conversion among a mechanical field, an electric field and a temperature field, and further realizes active control of the band gap based on the regulation rule of each physical field on the band gap. However, no technology of an active control device for ultrahigh frequency vibration based on a nano phonon crystal beam structure under the action of force-electricity-heat coupling exists at present.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide an ultra-high frequency vibration active control device of a nano phonon crystal beam structure, which can realize active control of the ultra-high frequency vibration of the nano phonon crystal beam structure by combining an acceleration sensor with a multi-physical field control system based on the regulation rule of a force-electric-thermal coupling physical field on a band gap.
In order to achieve the above purpose, the invention adopts the following technical scheme: an ultra-high frequency vibration active control device of a nano phonon crystal beam structure, comprising:
phonon crystal beam structure; the phonon crystal beam structure is of nanometer magnitude, and a vibration control area is arranged on the phonon crystal beam structure;
the power supply is connected with the photonic crystal beam structure and is used for supplying energy to the photonic crystal beam structure;
the acceleration sensor is connected with the phonon crystal beam structure and is used for picking up vibration signals at the vibration control area and sending the vibration signals to the multi-physical-field control system;
and the multi-physical-field control system is connected with the acceleration sensor and is used for outputting proper voltage, temperature difference and external load signals to the phonon crystal beam structure after processing vibration signals transmitted by the acceleration sensor, so as to realize active control of ultrahigh-frequency vibration.
Furthermore, the phonon crystal beam structure is formed by periodically and alternately arranging pure elastic materials and piezoelectric materials.
Further, the pure elastic material is a resin polymer material.
Further, the piezoelectric material is a piezoelectric polymer material.
Furthermore, the piezoelectric material and the pure elastic material are connected in a hard mode.
Further, the cross-section of the phonon crystal beam structure includes, but is not limited to, rectangular/circular.
Further, the power supply is connected with the piezoelectric material in the phonon crystal beam structure through a lead.
Further, the multi-physical field control system comprises a charge amplifier, a processor, a signal generator and a power amplifier which are sequentially connected through leads.
Further, an externally applied load applying part is arranged on the opposite side of the phonon crystal beam structure to the vibration control area.
Furthermore, an external load applying element, an external voltage applying element and a temperature difference applying element are respectively arranged between the power amplifier and the external load applying part and between the piezoelectric material and the phonon crystal beam structure.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
(1) The limitation of the controllable frequency band of vibration is broken through by compressing the size to the nanometer level, and the active control of the ultra-high frequency band vibration is realized.
(2) Based on the regulation rule of the force-electric-thermal coupling physical field to the band gap, the active control of the ultra-high frequency band vibration of the nano phonon crystal beam structure is realized by combining an acceleration sensor and a multi-physical field control system.
(3) Plays a positive role in promoting the development of the nano electromechanical system and provides a new idea for the intelligent application of the nano electromechanical system in engineering.
Drawings
The technical scheme of the invention is further described below with reference to the accompanying drawings:
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a diagram of the energy band structure corresponding to the present invention under certain material parameters, geometric parameters and force-electric-thermal coupling field parameters;
FIG. 3 is a graph showing the effect of the variation of the applied voltage on the start and stop frequencies of the forbidden bands;
FIG. 4 is a graph showing the effect of temperature difference variation on forbidden band start and stop frequencies;
FIG. 5 is a graph showing the effect of applied load variation on forbidden band start and stop frequencies;
wherein: 1. phonon crystal beam structure; 2. a vibration control area; 3. a power supply; 4. an acceleration sensor; 5. a charge amplifier; 6. a processor; 7. a signal generator; 8. a power amplifier; 9. an applied load applying position; 11. a pure elastic material; 12. a piezoelectric material; 20. an externally applied load applying member; 21. an external voltage applying element; 22. a temperature difference applying element.
Detailed Description
The invention will be described in further detail with reference to the accompanying drawings and specific examples.
Referring to fig. 1, the ultra-high frequency vibration active control device of the nano phonon crystal beam structure of the invention comprises: phonon crystal beam structure 1; the phonon crystal beam structure 1 is of nanometer magnitude, and a vibration control area 2 is arranged on the phonon crystal beam structure 1; the power supply 3 is connected with the photonic crystal beam structure 1 and is used for supplying energy to the photonic crystal beam structure 1; the acceleration sensor 4 is connected with the phonon crystal beam structure 1 and is used for picking up vibration signals at the vibration control area 2 and sending the vibration signals to the multi-physical-field control system; the multi-physical field control system connected with the acceleration sensor 4 is used for outputting proper voltage, temperature difference and external load signals to the phonon crystal beam structure 1 after processing vibration signals transmitted by the acceleration sensor 4, so as to realize active control of ultrahigh frequency vibration.
As a further preferred embodiment, the photonic crystal beam structure 1 is formed by periodically and alternately arranging pure elastic materials 11 and piezoelectric materials 12, wherein the pure elastic materials are resin polymer materials, such as epoxy resin, and the piezoelectric materials are piezoelectric polymer materials, such as piezoelectric ceramics PZT-4, and the like.
As a further preferred embodiment the connection between the piezoelectric material 12 and the purely elastic material 11 is a hard connection, such as a glue or a screw connection.
As a further preferred embodiment, the cross section of the phonon crystal beam structure 1 includes, but is not limited to, rectangular/circular.
As a further preferred embodiment, the power source 3 is connected to the plurality of piezoelectric materials 12 in the photonic crystal beam structure 1 by leads.
As a further preferred embodiment, the multi-physical field control system comprises a charge amplifier 5, a processor 6, a signal generator 7 and a power amplifier 8 connected in sequence by leads.
As a further preferred embodiment, the phonon crystal beam structure 1 is provided with an applied load application 9 on the opposite side to the vibration control region 2.
As a further preferred embodiment, the acceleration sensor 4 is connected to the piezoelectric material 12 located at the trailing end of the photonic crystal beam structure 1 by means of leads.
As a further preferred embodiment, an external load applying element 20, an external voltage applying element 21 and a temperature difference applying element 22 are respectively arranged between the power amplifier 8 and the external load applying point 9, the piezoelectric material 12 and the photonic crystal beam structure.
Working principle: for piezoelectric materials, a controllable voltage V is applied to the piezoelectric materials through an external voltage application element; for the entire structure, a controllable temperature difference Δt is applied by the temperature difference applying element 22; for the applied load application, a controllable load P is applied by the applied load applying element 20 0 The method comprises the steps of carrying out a first treatment on the surface of the When the acceleration sensor picks up the vibration signal at the vibration control area 4, the vibration signal is transmitted to the processor 6 through the charge amplifier 5, the processor 6 calculates proper voltage, temperature difference and external load signal through analysis, and the corresponding signals are output to the external load applying element 20, the external voltage applying element 21 and the temperature difference applying element 22 through the signal generator 7 and the power amplifier 8, so that the active control of the ultra-high frequency vibration of the nano phonon crystal beam structure is realized.
Embodiment one:
the section of the phonon crystal beam structure is rectangular, and the piezoelectric material and the pure elastic material are respectively piezoelectric ceramic PZT-4 and epoxy resin.
Wherein the material parameters of PZT-4 are: density ρ 1 ＝7500kg·m -3 Spring constant c 11 =132 Gpa, piezoelectric constant e 31 ＝-4.1C·m -2 Dielectric constant κ 33 ＝7.124×10 -9 C·V -1 ·m -1 Thermal modulus constant lambda 1 ＝4.738×10 5 N·m -2 ·K -1 The method comprises the steps of carrying out a first treatment on the surface of the The material constants of the epoxy resin are as follows: density ρ 2 ＝1180kg·m -3 The elastic constant e=4.35 GPa.
The geometrical parameters in this embodiment are: length a of PZT-4 1 Length of epoxy resin a =50 nm 2 Cross-sectional width b=10 nm, cross-sectional height h=10 nm, =50 nm.
When the relevant parameters of the multiple physical fields are set as follows: controllable voltage v=0.2v, controllable temperature difference Δt×20deg.c, and controllable load P 0 ＝1×10 -8 In the case of N, as can be seen from the band structure diagram shown in fig. 2, in the frequency band below 8GHz, the structure will have forbidden bands (grey marked areas) between the frequency bands of 3.4-6.7GHz, and pass bands will be present in the rest of the frequency bands. Wherein the forbidden band indicates a frequency band in which transmission of vibration is prohibited, and the passband indicates a frequency band in which transmission of vibration is permitted.
When the parameters of each physical field are changed, the controllable voltage V= -10V, the controllable temperature difference delta T= -100 ℃ and the controllable load P 0 ＝0～5×10 -8 The frequency bands of the forbidden band and the passband are changed along with the change of the physical field, and the graphs of the influence of the change of the applied voltage, the temperature difference and the applied load on the starting and the ending frequencies of the forbidden band are respectively shown in the accompanying figures 3,4 and 5, and the corresponding relation between the frequency bands of the forbidden band and the passband and the parameter components of the multiple physical fields can be realized through data processing.
When the phonon crystal beam structure vibrates, the frequency band corresponding to the vibration signal in the vibration control area is picked up by the acceleration sensor, the optimal multiple physical field parameters for controlling the frequency band are further analyzed by the multiple physical field control system, and then the voltage, the temperature difference and the additional load signal are output to the phonon crystal beam structure, so that the active control of the ultra-high frequency vibration is realized.
The foregoing is merely a specific application example of the present invention, and the protection scope of the present invention is not limited in any way. All technical schemes formed by equivalent transformation or equivalent substitution fall within the protection scope of the invention.
Claims (8)
1. The ultra-high frequency vibration active control device of the nano phonon crystal beam structure is characterized by comprising:
phonon crystal beam structure; the phonon crystal beam structure is of nanometer magnitude, and a vibration control area is arranged on the phonon crystal beam structure;
the power supply is connected with the photonic crystal beam structure and is used for supplying energy to the photonic crystal beam structure;
the acceleration sensor is connected with the phonon crystal beam structure and is used for picking up vibration signals at the vibration control area and sending the vibration signals to the multi-physical-field control system;
the multi-physical-field control system is connected with the acceleration sensor and is used for outputting proper voltage, temperature difference and external load signals to the phonon crystal beam structure after processing the vibration signals transmitted by the acceleration sensor so as to realize the active control of ultrahigh-frequency vibration; the phonon crystal beam structure is formed by periodically and alternately arranging pure elastic materials and piezoelectric materials; the cross section of the phonon crystal beam structure comprises a rectangle/circle.
2. The ultra-high frequency vibration active control device of the nano phonon crystal beam structure according to claim 1, wherein the ultra-high frequency vibration active control device is characterized in that: the pure elastic material is a resin polymer material.
3. The ultra-high frequency vibration active control device of the nano phonon crystal beam structure according to claim 1, wherein the ultra-high frequency vibration active control device is characterized in that: the piezoelectric material is a piezoelectric polymer material.
4. The ultra-high frequency vibration active control device of the nano phonon crystal beam structure according to claim 1, wherein the ultra-high frequency vibration active control device is characterized in that: the piezoelectric material and the pure elastic material are rigidly connected.
5. The ultra-high frequency vibration active control device of the nano phonon crystal beam structure according to claim 1, wherein the ultra-high frequency vibration active control device is characterized in that: the power supply is connected with the piezoelectric material in the phonon crystal beam structure through a lead.
6. The ultra-high frequency vibration active control device of the nano-phonon crystal beam structure according to claim 5, wherein: the multi-physical field control system comprises a charge amplifier, a processor, a signal generator and a power amplifier which are sequentially connected through leads.
7. The ultra-high frequency vibration active control device of the nano-phonon crystal beam structure according to claim 6, wherein: and an externally applied load applying part is arranged on the opposite side of the phonon crystal beam structure to the vibration control area.
8. The ultra-high frequency vibration active control device of the nano-phonon crystal beam structure according to claim 7, wherein: and an external load applying element, an external voltage applying element and a temperature difference applying element are respectively arranged between the power amplifier and the external load applying part, between the piezoelectric material and the phonon crystal beam structure.
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Citations (6)
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| US5005678A (en) * | 1989-03-03 | 1991-04-09 | The Boeing Company | Method and apparatus for sensing and damping vibration |
| US5156460A (en) * | 1990-11-05 | 1992-10-20 | Sundstrand Corporation | Crystal temperature transducer |
| TW201121234A (en) * | 2009-12-02 | 2011-06-16 | Ind Tech Res Inst | Resonator and periodic structure |
| CN105373151A (en) * | 2015-12-23 | 2016-03-02 | 高显明 | Vibration machine vibration frequency closed-loop control device |
| CN108534942A (en) * | 2018-03-28 | 2018-09-14 | 西南交通大学 | A kind of minute-pressure resistive sensor vibration and temperature interference compensation model and system |
| CN209803643U (en) * | 2019-03-12 | 2019-12-17 | 苏州科技大学 | Ultrahigh frequency vibration active control device of nano phononic crystal beam structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180364153A1 (en) * | 2017-06-15 | 2018-12-20 | William N Carr | Absorptive Spectrometer with Integrated Photonic and Phononic Structures |
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|---|---|---|---|---|
| US5005678A (en) * | 1989-03-03 | 1991-04-09 | The Boeing Company | Method and apparatus for sensing and damping vibration |
| US5156460A (en) * | 1990-11-05 | 1992-10-20 | Sundstrand Corporation | Crystal temperature transducer |
| TW201121234A (en) * | 2009-12-02 | 2011-06-16 | Ind Tech Res Inst | Resonator and periodic structure |
| CN105373151A (en) * | 2015-12-23 | 2016-03-02 | 高显明 | Vibration machine vibration frequency closed-loop control device |
| CN108534942A (en) * | 2018-03-28 | 2018-09-14 | 西南交通大学 | A kind of minute-pressure resistive sensor vibration and temperature interference compensation model and system |
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Non-Patent Citations (2)
| Title |
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