CN109870884A - A kind of laser interference shifts backward system - Google Patents
A kind of laser interference shifts backward system Download PDFInfo
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- CN109870884A CN109870884A CN201910310855.7A CN201910310855A CN109870884A CN 109870884 A CN109870884 A CN 109870884A CN 201910310855 A CN201910310855 A CN 201910310855A CN 109870884 A CN109870884 A CN 109870884A
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Abstract
A kind of laser interference shifts backward system is related to laser transfer manufacture field, the combination based on laser transfer technique and interference technique, by substrate material in a manner of pattern shifts backward non-transparent substrate material surface.The system includes: pulse laser, beam splitter, reflecting mirror and polariscope；Pulse laser issues laser, separates at least two-beam by beam splitter, reflects via reflecting mirror, by adjusting energy density in range of laser energy, several Shu Guang are interfered；Component to be processed includes translucent material and body material, and laser passes through translucent material and interferes in body material surface, and the laser interfered burns body material, and the electrodeposition substance of sputtering forms nano-scale patterns on the translucent material face closed on body material.Double light beam laser shifts backward interference system of the invention can directly realize the direct preparation of the interference periods structure of material transfer and large area in normal circumstances, high in machining efficiency, and at low cost, pollution-free, method is easy, and structural integrity is clear.
Description
Technical field
The present invention relates to laser transfer processing technique fields, and in particular to a kind of laser interference shifts backward system.
Background technique
Laser shifts backward technology is a kind of important technology that fine nano-micro structure is shifted using pulse laser, is mainly answered
Orientation for the opaque bodies material such as oxide, metal, organic compound shifts preparation.Existing laser high efficiency turns round
The method that shifting technology all uses monochromatic light beam scanning to shift.Such as: 2009, A.I.Kuznetsov et al. was put forward for the first time laser pulse
Shifts backward technology simultaneously uses 800nm wavelength femtosecond laser using this method, and Au nanometer layer is transferred to glass receiving layer, is passed through
SEM observes complete ball-type nanoparticle on receiving layer.
2012, H.Sakata et al. utilized laser pulse shifts backward technology, and wavelength is used to swash for the Nd:YAG of 532nm
The irradiation of light device is previously prepared Bi2O3The substrate of film, has been transferred on receiving layer, and by experimental result in laser pulse
Branch mode compares forward, it was demonstrated that the advantage of this method.
2015, M.Feinaeugle et al., successfully LIBT technology is combined with nanometer embossing, by preparatory spin coating
PDMS material in the substrate with certain structure has been arrived in silicon base by the technique transfers, it was demonstrated that this is a kind of formed
The method that structure can satisfy transfer material requested simultaneously.2016, M.Feinaeugle et al. was turned round using laser pulse
Technique transfers SU-8 photoresist is moved, as utilizing laser pulse shifts backward technology grinding in terms of polymer transfer for the first time
Study carefully.
Currently, laser shifts backward technology has respective deficiency, do not have the features such as high efficiency, large area.
Summary of the invention
In order to solve the problems in the existing technology, the present invention provides a kind of laser interference shifts backward system, bases
In the combination of laser shifts backward technology and interference technique, after laser interference acts on substrate material, by substrate material to scheme
Quick, convenient, the efficient preparation side of oldered array structural material is realized on the mode shifts backward non-transparent substrate material surface of case
Method.
The technical proposal for solving the technical problem of the invention is as follows:
A kind of laser interference shifts backward system, the system include: pulse laser, beam splitter, reflecting mirror and polariscope；
The pulse laser issues laser, separates at least two-beam by beam splitter, reflects via reflecting mirror, is being swashed by polariscope
After adjusting energy density within the scope of light energy, several Shu Guang are interfered；Component to be processed includes translucent material and body material, is adjusted
The laser for crossing energy density passes through the translucent material and interferes in the body material surface, and the laser interfered is to body material
Material is burnt, and the electrodeposition substance of sputtering forms nano-scale patterns on the translucent material face closed on the body material；It is described
Incidence angle degree of several Shu Guang before the translucent material is equal.
The beneficial effects of the present invention are: the present invention proposes a kind of laser interference shifts backward system, multi-beam laser is utilized
Interference passes through laser pulse shifts backward technique transfers material requested while obtaining nano-array figure, to realize general
Large area, high efficiency, free of contamination convenient one-step method nanostructure preparation under logical atmospheric environment.Use laser as light source,
Advantage is that laser has good coherence, is adapted for interference lithography.In addition, the peak power of short-pulse laser is higher,
It can satisfy ablation of the laser to material.Double light beam laser shifts backward interference system of the invention, can be directly in common ring
Realized under border to metal, alloy body, semiconductor, the transfer of organic compound and realize large area interference periods structure it is direct
Preparation, high in machining efficiency, at low cost, pollution-free, method is easy, and the nanostructure of acquisition is completely clear.
Detailed description of the invention
A kind of laser interference shifts backward system structure diagram of Fig. 1 present invention.
Fig. 2 embodiment of the present invention one scans electron microscope observation figure.
Two scanning electron microscope of Fig. 3 embodiment of the present invention observation figure.
Three scanning electron microscope of Fig. 4 embodiment of the present invention observation figure.
Four scanning electron microscope of Fig. 5 embodiment of the present invention observation figure.
Five scanning electron microscope of Fig. 6 embodiment of the present invention observation figure.
Six scanning electron microscope of Fig. 7 embodiment of the present invention observation figure.
In figure: 1, high-power short-pulse laser, 2, beam splitter, the 3, first reflecting mirror, the 4, second reflecting mirror, 5, third it is anti-
Penetrate mirror, the 6, first polariscope, the 7, second polariscope, 8, component to be processed.
Specific embodiment
In order to make those skilled in the art better understand the technical solutions in the application, below in conjunction with the application reality
The attached drawing in example is applied, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described implementation
Example is merely a part but not all of the embodiments of the present application.Based on the embodiment in the application, this field is common
The application protection all should belong in technical staff's every other embodiment obtained without making creative work
Range.
As shown in Figure 1, a kind of laser interference shifts backward system, which includes: pulse laser, beam splitter 2, reflection
Mirror and polariscope；In the present embodiment, the pulse laser is femtosecond or nanosecond high-power short-pulse laser 1, laser energy
Metric density is greater than 50mJ/cm2.The high-power short-pulse laser 1 issues laser, separates two-beam by beam splitter 2, and first
Shu Guang is reflected via the first reflecting mirror 3, is adjusted energy density in range of laser energy by the first polariscope 6, is reached to be added
The surface of work component 8；Second beam light is reflected via the second reflecting mirror 4 and third reflecting mirror 5, by the second polariscope 7 in laser
Energy density is adjusted in energy range, reaches the surface of component 8 to be processed；Two-beam interferes, wherein the incidence of two light beams
Angle is respectively 10 °, forms cycle T=3 micron of interference nano striped, and width of fringe is d=1 microns.Component 8 to be processed includes
Translucent material and body material, the wherein organic translucent material of translucent material and inorganic translucent material.Organic translucent material is poly-
Close object translucent material.The inorganic translucent material is quartz glass, simple glass, optical glass, ito glass and FTO glass.It is dry
Generation is related on the translucent material surface, the laser interfered burns body material, the electrodeposition substance of sputtering with the body
On the translucent material face that material closes on, nano-scale patterns are formed.The body material is thin-film material, and material is metal, closes
Jin Ti, ceramics or semiconductor.Two-beam 8 surface of component to be processed realize interference structure while also realize material requested to
After shift.The translucent material is arranged on shift experiment platform, by between Transfer Experiment platform control volume material and translucent material
Relative distance.First reflecting mirror 3 and the first polariscope 6, with the second reflecting mirror 4, the reflection of third reflecting mirror 5 and the second polarization
Mirror 7 is in system centre axial symmetry.
Embodiment one
As shown in Figure 1, laser is issued by Nd:YAG laser (1064nm), by beam splitter 2, the first reflecting mirror 3, second
Light beam is divided into two-beam coherent light by reflecting mirror 4 and third reflecting mirror 5.It is adjusted afterwards by the first polariscope 6 and the second polariscope 7,
Light beam I and II is incident beam.Plane symmetry distribution incident light I, II vertical in component to be processed, as 0 ° and 180 °.
Two beam incident angles are 10 °, and the interference figure period is 3 microns.The light intensity and polarization of each light beam are accurately controlled by polariscope
Angle forms striated structure on surface.Fig. 2 is shown using this system in 65mJ/cm2Laser energy density, in pulse persistance
Time prepares shifts backward interference fringe structure under the conditions of being 20s.Being transferred material is monocrystalline silicon, and reception transparent substrates are ITO
Glass.Nanoparticle can be successfully shifted while realizing two-beam interference as seen from Figure 2, interference structure and transfer are received
Rice corpuscles complete display is evenly distributed.
Embodiment two
As shown in Figure 1, laser is issued by Nd:YAG laser (1064nm), by beam splitter 2, the first reflecting mirror 3, second
Light beam is divided into two-beam coherent light by reflecting mirror 4 and third reflecting mirror 5.It is adjusted afterwards by the first polariscope 6 and the second polariscope 7,
Light beam I and II is incident beam.Plane symmetry distribution incident light I, II vertical with component to be processed, as 0 ° and 180 °.
Two beam incident angles are 10 °, and the interference figure period is 3 microns.The light intensity and polarization of each light beam are accurately controlled by polariscope
Angle forms interference fringe on surface.Fig. 3 is shown using this system in 75mJ/cm2Laser energy density, when pulse persistance
Between for the shifts backward interference fringe structure for preparing under the conditions of 20s.Being transferred material is monocrystalline silicon, and reception transparent substrates are ITO
Glass.Nanoparticle can be successfully shifted while realizing two-beam interference as seen from Figure 3, interference structure and transfer are received
Rice corpuscles complete display is evenly distributed.
Embodiment three
As shown in Figure 1, laser is issued by Nd:YAG laser (1064nm), by beam splitter 2, the first reflecting mirror 3, second
Light beam is divided into two-beam coherent light by reflecting mirror 4 and third reflecting mirror 5.It is adjusted afterwards by the first polariscope 6 and the second polariscope 7,
Light beam I and II is incident beam.Plane symmetry distribution incident light I, II vertical with component to be processed, as 0 ° and 180 °.
Two beam incident angles are 10 °, and the interference figure period is 3 microns.The light intensity and polarization of each light beam are accurately controlled by polariscope
Angle forms interference fringe on surface.Fig. 4 is shown using this system in 95mJ/cm2Laser energy density, when pulse persistance
Between for the shifts backward interference fringe structure for preparing under the conditions of 20s.Being transferred material is monocrystalline silicon, and reception transparent substrates are ITO
Glass.Nanoparticle can be successfully shifted while realizing two-beam interference as seen from Figure 4, interference structure and transfer are received
Rice corpuscles complete display is evenly distributed.
Example IV
As shown in Figure 1, laser is issued by Nd:YAG laser (1064nm), by beam splitter 2, the first reflecting mirror 3, second
Light beam is divided into two-beam coherent light by reflecting mirror 4 and third reflecting mirror 5.It is adjusted afterwards by the first polariscope 6 and the second polariscope 7,
Light beam I and II is incident beam.Plane symmetry distribution incident light I, II vertical with component to be processed, as 0 ° and 180 °.
Two beam incident angles are 10 °, and the interference figure period is 3 microns.The light intensity and polarization of each light beam are accurately controlled by polariscope
Angle forms interference fringe on surface.Fig. 5 is shown using this system in 20mJ/cm2Laser energy density, pulse condition
The shifts backward interference fringe structure of lower preparation.Being transferred material is gold thin film, and reception transparent substrates are ito glass.It can by Fig. 5
Nanoparticle can be successfully shifted while realizing two-beam interference to find out, interference structure and transfer nanoparticle are clearly complete
It is whole to be evenly distributed.
Embodiment five
As shown in Figure 1, laser is issued by Nd:YAG laser (1064nm), by beam splitter 2, the first reflecting mirror 3, second
Light beam is divided into two-beam coherent light by reflecting mirror 4 and third reflecting mirror 5.It is adjusted afterwards by the first polariscope 6 and the second polariscope 7,
Light beam I and II is incident beam.Plane symmetry distribution incident light I, II vertical with component to be processed, as 0 ° and 180 °.
Two beam incident angles are 10 °, and the interference figure period is 3 microns.The light intensity and polarization of each light beam are accurately controlled by polariscope
Angle forms interference fringe on surface.Fig. 6 is shown using this system in 30mJ/cm2Laser energy density, pulse condition
The shifts backward interference fringe structure of lower preparation.Being transferred material is gold thin film, and reception transparent substrates are ito glass.It can by Fig. 6
Nanoparticle can be successfully shifted while realizing two-beam interference to find out, interference structure and transfer nanoparticle are clearly complete
It is whole to be evenly distributed.
Embodiment six
As shown in Figure 1, laser is issued by Nd:YAG laser (1064nm), by beam splitter 2, the first reflecting mirror 3, second
Light beam is divided into two-beam coherent light by reflecting mirror 4 and third reflecting mirror 5.It is adjusted afterwards by the first polariscope 6 and the second polariscope 7,
Light beam I and II is incident beam.Plane symmetry distribution incident light I, II vertical with component to be processed, as 0 ° and 180 °.
Two beam incident angles are 10 °, and the interference figure period is 3 microns.The light intensity of each light beam is accurately controlled by wave plate and polariscope
And polarization angle, interference fringe is formed on surface.Fig. 7 is shown using this system in 40mJ/cm2Laser energy density, simple venation
The shifts backward interference fringe structure prepared under the conditions of punching.Being transferred material is gold thin film, and reception transparent substrates are ito glass.
Nanoparticle, interference structure and transfer nanoparticle can be successfully shifted while realizing two-beam interference as seen from Figure 7
Sub- complete display is evenly distributed.
In conclusion the present invention uses double light beam laser optical interference circuit.Input directional light is split, multiple beam passes through
Polariscope adjusts laser energy.Two-beam interference photolithography method through the invention, can be on semiconductor, the materials such as metal
Material for transfer while directly preparing interference figure, it is high in machining efficiency, and also used component is easy to get, and it is at low cost,
This method is substantially better than existing method.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (10)
1. a kind of laser interference shifts backward system, which is characterized in that the system includes: pulse laser, beam splitter, reflecting mirror
And polariscope；The pulse laser issues laser, separates at least two-beam by beam splitter, reflects, pass through via reflecting mirror
After polariscope adjusts energy density in range of laser energy, several Shu Guang are interfered；Component to be processed include translucent material and
Body material, the laser for adjusting energy density pass through the translucent material and interfere in the body material surface, interferes
Laser body material is burnt, the electrodeposition substance of sputtering on the translucent material face closed on the body material, receive by formation
Meter level pattern；Incidence angle degree of a few Shu Guang before the translucent material is equal.
2. a kind of laser interference shifts backward system according to claim 1, which is characterized in that the incidence angle value model
Enclose is 5 ° -50 °.
3. a kind of laser interference shifts backward system according to claim 1, which is characterized in that the pulse laser is
Energy density is greater than 50mJ/cm2Femtosecond or nanosecoud pulse laser.
4. a kind of laser interference shifts backward system according to claim 1, which is characterized in that the reflecting mirror is to be all-trans
Penetrate mirror.
5. a kind of laser interference shifts backward system according to claim 1, which is characterized in that the body material is film
Material, material are metal, alloy body, ceramics or semiconductor.
6. a kind of laser interference shifts backward system according to claim 1, which is characterized in that the body material and light transmission
The distance between material is adjustable.
7. a kind of laser interference shifts backward system according to claim 1, which is characterized in that the substance of the sputtering is heavy
Pattern of the product on the translucent material face closed on the body material is striped, dot matrix and gradient pattern.
8. a kind of laser interference shifts backward system according to claim 1, which is characterized in that the translucent material is to have
Machine translucent material and inorganic translucent material.
9. a kind of laser interference shifts backward system according to claim 1, which is characterized in that organic translucent material
For polymer translucent material.
10. a kind of laser interference shifts backward system according to claim 1, which is characterized in that the inorganic light transmission material
Material is quartz glass, simple glass, optical glass, ito glass and FTO glass.
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| US4208637A (en) * | 1977-03-09 | 1980-06-17 | Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry | Tunable optical device |
| CN102141736A (en) * | 2011-01-05 | 2011-08-03 | 中国科学院半导体研究所 | Auxiliary detection device and method for ultraviolet laser interference fringe |
| CN106825915A (en) * | 2017-03-28 | 2017-06-13 | 北京印刷学院 | The pulse laser induced system and method that transfer prepares pattern metal thin layer forward |
| CN108648890A (en) * | 2018-05-10 | 2018-10-12 | 广州大学 | The preparation method of nano particle linear array resistance |
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2019
- 2019-04-18 CN CN201910310855.7A patent/CN109870884B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4208637A (en) * | 1977-03-09 | 1980-06-17 | Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry | Tunable optical device |
| CN102141736A (en) * | 2011-01-05 | 2011-08-03 | 中国科学院半导体研究所 | Auxiliary detection device and method for ultraviolet laser interference fringe |
| CN106825915A (en) * | 2017-03-28 | 2017-06-13 | 北京印刷学院 | The pulse laser induced system and method that transfer prepares pattern metal thin layer forward |
| CN108648890A (en) * | 2018-05-10 | 2018-10-12 | 广州大学 | The preparation method of nano particle linear array resistance |
Non-Patent Citations (1)
| Title |
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| 侯煜 等: "应用于大面积光刻的激光图案检测系统", 《中国科技论文》 * |
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