CN102141736A - Auxiliary detection device and method for ultraviolet laser interference fringe - Google Patents
Auxiliary detection device and method for ultraviolet laser interference fringe Download PDFInfo
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- CN102141736A CN102141736A CN201110001219XA CN201110001219A CN102141736A CN 102141736 A CN102141736 A CN 102141736A CN 201110001219X A CN201110001219X A CN 201110001219XA CN 201110001219 A CN201110001219 A CN 201110001219A CN 102141736 A CN102141736 A CN 102141736A
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Abstract
The invention discloses an auxiliary detection device and a method for an ultraviolet laser interference fringe. In the auxiliary detection device, a visible laser light path is additionally arranged in an ultraviolet laser holographic lithography system; and after the relation between visible laser wavelength and ultraviolet laser wavelength is determined, the period of the ultraviolet laser interference fringe is detected through observing a visible laser interference fringe, therefore, the process of detecting the ultraviolet laser interference fringe in the ultraviolet laser holographic lithography system is simplified, the period of the holographic lithography process is shortened, and the cost of the lithography process is reduced.
Description
Technical field
The present invention relates to optics industry microelectronics technology, relate in particular to a kind of auxiliary detection device and method of Ultra-Violet Laser interference fringe.
Background technology
Semiconductor laser diode is in order to realize single frequency operation; usually can select distributed feed-back (Distribution Feedback for use; be called for short DFB) and Bragg reflective (Distribution BraggReflection, abbreviation DBR) structure excitation wavelength is carried out model selection.This DFB and dbr structure be actually a series of specific periods on a large scale, repeated optical grating construction.
Because the wavelength of semiconductor laser is the scope between 1600nm to 400nm usually, this just makes the grating cycle of carrying out the wavelength mode selection in the hundreds of nanometer scale, have in addition less than 200nm.Optical grating construction on this semiconductor laser is realized by photoetching technique and lithographic technique.Because the making area that this optical grating construction requires is big, good reproducibility, this make traditional optical to stencil photoetching technique cost in this semiconductor laser manufacturing process higher, and the advantage of holographic lithography just is to be suitable for to make on a large scale, repeated grating, so holographic lithography becomes the good selection that fabrication cycle is the hundreds of nanometer grating.Say that simply holographic technique is exactly to utilize the relevant fully laser of two bundles to incide a place, forms the periodically variable interference fringe of light intensity.The cycle of interference fringe is to be determined by the wavelength of incident laser and incident angle.Consider the grating cycle even be less than 200nm, the wavelength of incident laser will be short as much as possible so, will select Ultra-Violet Laser to form littler interference fringe of cycle usually.
Fig. 1 is a prior art monochromatic light of the present invention road Ultra-Violet Laser holographic lithography system schematic.Fig. 2 is a prior art double light path Ultra-Violet Laser holographic lithography system schematic of the present invention.Be example with Fig. 2 now, system describes to the Ultra-Violet Laser holographic lithography.In Fig. 2, the angle of catoptron 3 and catoptron 4 is adjustable, makes that finally two bundle laser are identical to the incident angle of photolithographic substrates, are defined as 2 θ among the angle figure of the two.In theory, two fringe period of restrainting relevant fully laser interference formation can be expressed from the next:
In the formula (1), D is a fringe period, and λ is a laser wavelength of incidence, and n is the refractive index of material on the photolithographic substrates, and θ is the incident angle of incident laser.Under the fixing situation of laser wavelength of incidence and refractive index,, just can obtain the fringe period that we want as long as remove to adjust incident angle θ.The principle of monochromatic light road Ultra-Violet Laser holographic lithography system shown in Figure 1 similarly repeats no more.
Because Ultra-Violet Laser is with respect to the invisibility of naked eyes, this has brought very big difficulty just for online detection fringe period, can't realize online detection.Usually the method that detects mainly contains two kinds:
1, removable ultraviolet sensitization base plate is surveyed, and promptly is at the anterior sensitization base plate of placing of photolithographic substrates, regulates according to the striped on the base plate, removes base plate after having regulated and gets final product.Shortcoming: search coverage and photolithographic substrates zone be not at same position, and the detection striped can not fully truly be reflected in the actual streak feature on the photolithographic substrates, and be inconsistent before detection area and the actual light facet simultaneously, can't monitor the striped unitarity; Influence stability of layout; The observation precision is subject to the resolution of sensitization base plate.
2, fixedly ultraviolet sensitization base plate is surveyed, and promptly is earlier photolithographic substrates to be changed into the sensitization base plate, regulate fringe period after, again base plate is changed into substrate and gets final product.Shortcoming: influence stability of layout during the transposing photolithographic substrates; The observation precision is subject to the resolution of sensitization base plate.
In realizing process of the present invention, the inventor recognizes that there is following defective in prior art: because the invisibility of Ultra-Violet Laser, the process of debugging Ultra-Violet Laser interference fringe is very complicated in ultraviolet light holographic lithography system.
Summary of the invention
(1) technical matters that will solve
At above-mentioned technical matters, the present invention proposes a kind of auxiliary detection device and method of Ultra-Violet Laser interference fringe, to be reduced at the process of debugging Ultra-Violet Laser interference fringe in the ultraviolet light holographic lithography system.
(2) technical scheme
A kind of auxiliary detection device of Ultra-Violet Laser interference fringe is provided according to an aspect of the present invention.This device is applied to comprise in the Ultra-Violet Laser holographic lithography system: visible laser and auxiliary detection light path.This visible laser is used to produce the auxiliary detection laser of visible light wave range, and the wavelength of this auxiliary detection Wavelength of Laser and Ultra-Violet Laser satisfies preset relation.This auxiliary detection light path, by auxiliary detection laser in Ultra-Violet Laser holographic lithography system the path of process, two way light paths of auxiliary detection light path are parallel respectively with the two-way coherent laser that forms the Ultra-Violet Laser interference fringe, this two ways light path is in the interference fringe for the treatment of to form on the photolithographic substrates visible light wave range, and the interference fringe of this visible light wave range is used for auxiliary detection Ultra-Violet Laser interference fringe.
Preferably, the auxiliary detection device of this Ultra-Violet Laser interference fringe also comprises: selectivity is saturating/and catoptron.This selectivity is saturating/catoptron, be positioned at the front end of beam splitting arrangement that Ultra-Violet Laser holographic lithography system forms the sub-light path of the relevant laser of two-way, and the rear end of visible laser; Ultra-Violet Laser by selectivity saturating/mirror reflects after the incident beam splitting arrangement, auxiliary detection laser-transmitting selectivity is saturating/catoptron after the incident beam splitting arrangement.
Preferably, in the auxiliary detection device of this Ultra-Violet Laser interference fringe, selectivity is saturating/first catoptron of catoptron for Ultra-Violet Laser is reflected.
A kind of aided detection method of Ultra-Violet Laser interference fringe also is provided according to another aspect of the present invention.This method is applied to comprise in the Ultra-Violet Laser holographic lithography system: visible laser produces the auxiliary detection laser of visible light wave range; Two way light paths of this auxiliary detection laser are parallel respectively with the two-way coherent laser that forms the Ultra-Violet Laser interference fringe, be used in the interference fringe for the treatment of to form on the photolithographic substrates visible light wave range, the interference fringe of this visible light wave range is used for auxiliary detection Ultra-Violet Laser interference fringe.
(3) beneficial effect
The present invention has increased the laser optical path of a cover observability in Ultra-Violet Laser holographic lithography system, after the relation of determining visible laser wavelength and Ultra-Violet Laser wavelength, come the Ultra-Violet Laser fringe period is detected by the interference fringe of observing visible laser, thereby simplified the process that in ultraviolet light holographic lithography system, detects the Ultra-Violet Laser interference fringe, shorten the cycle of holographic lithography technology, and reduced the cost of photoetching process.
Description of drawings
Fig. 1 is a prior art monochromatic light of the present invention road Ultra-Violet Laser holographic lithography system schematic;
Fig. 2 is a prior art double light path Ultra-Violet Laser holographic lithography system schematic of the present invention;
Fig. 3 is first Organization Chart that increases Ultra-Violet Laser interference fringe auxiliary detection device of the present invention in double light path Ultra-Violet Laser holographic lithography system;
Fig. 4 is second Organization Chart that increases Ultra-Violet Laser interference fringe auxiliary detection device of the present invention in double light path Ultra-Violet Laser holographic lithography system;
Fig. 5 is the Organization Chart that increases Ultra-Violet Laser interference fringe auxiliary detection device of the present invention in monochromatic light road Ultra-Violet Laser holographic lithography system.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
In one exemplary embodiment of the present invention, the auxiliary detection device of Ultra-Violet Laser interference fringe is applied to comprise in the Ultra-Violet Laser holographic lithography system: visible laser and auxiliary detection light path.This visible laser is used to produce the auxiliary detection laser of visible light wave range, and the wavelength of this auxiliary detection Wavelength of Laser and described Ultra-Violet Laser satisfies preset relation; This auxiliary detection light path, by auxiliary detection laser in Ultra-Violet Laser holographic lithography system the path of process, two way light paths of this auxiliary detection light path are parallel respectively with the two-way coherent laser that forms the Ultra-Violet Laser interference fringe, this two ways light path is in the interference fringe for the treatment of to form on the photolithographic substrates visible light wave range, and the interference fringe of this visible light wave range is used for auxiliary detection Ultra-Violet Laser interference fringe.
The present invention has increased the auxiliary detection light path of a cover observability in ultraviolet holographic lithography system, after the relation of determining visible laser wavelength and Ultra-Violet Laser wavelength, come the Ultra-Violet Laser fringe period is detected by the interference fringe of observing visible laser.And then, the invention enables the Ultra-Violet Laser interference fringe to can be implemented in line and detect, reduced the holographic lithography process cycle, further saved the holographic lithography cost simultaneously.
In a further embodiment, the auxiliary detection device of this Ultra-Violet Laser interference fringe also comprises selectivity saturating/catoptron.Selectivity is saturating/catoptron, be positioned at the front end of beam splitting arrangement that Ultra-Violet Laser holographic lithography system forms the sub-light path of the relevant laser of two-way, the rear end of visible laser; After saturating/mirror reflects that Ultra-Violet Laser passes through selectivity, the incident beam splitting arrangement; Auxiliary detection laser-transmitting selectivity is saturating/catoptron after, the incident beam splitting arrangement.Preferably, this selectivity saturating/first catoptron of catoptron for Ultra-Violet Laser is reflected; And before/catoptron saturating through selectivity, Ultra-Violet Laser is vertical with the light path of auxiliary detection laser, and selectivity is saturating/and the light path of catoptron and the Ultra-Violet Laser at quarter and the visible light laser that is used to detect is all at 45.Preferably, selectivity is saturating/catoptron is total reflection to Ultra-Violet Laser, to the transmissivity of auxiliary detection laser more than or equal to 50%.
Corresponding with the embodiment of said apparatus, the invention also discloses a kind of aided detection method of Ultra-Violet Laser interference fringe.This method is applied to comprise in the Ultra-Violet Laser holographic lithography system:
Step S102, visible laser produces the auxiliary detection laser of visible light wave range;
Step S104, two way light paths of this auxiliary detection light path are parallel respectively with the two-way coherent laser that forms the Ultra-Violet Laser interference fringe, be used in the interference fringe for the treatment of to form on the photolithographic substrates visible light wave range, the interference fringe of this visible light wave range is used for auxiliary detection Ultra-Violet Laser interference fringe.
Below with reference to specific embodiment, the present invention will be described in detail.Need to prove that each additional technical feature of following examples as not specifying, all is applicable to device embodiment and method embodiment.
The present invention has added one again and has detected light path in Ultra-Violet Laser holographic lithography system.Fig. 3 is first Organization Chart that increases Ultra-Violet Laser interference fringe auxiliary detection device of the present invention in double light path Ultra-Violet Laser holographic lithography system.As shown in Figure 3, in new holographic lithography system, the variation of optical component is as follows: 1, increased by a cover visible laser system; 2, the optical parametric of catoptron 2～4 selects to want to satisfy simultaneously the total reflection function of visible auxiliary detection laser and Ultra-Violet Laser; 3, the optical parametric of beam expanding lens selects to want preferentially to satisfy the expansion beam function of Ultra-Violet Laser, simultaneously auxiliary detection laser is had certain expansion Shu Nengli; 4, beam splitter is when satisfying Ultra-Violet Laser 50% beam split ability, can carry out light-splitting processing near 50% to visible auxiliary detection laser; 5, the optical element catoptron 1 among Fig. 2 is replaced by selectivity saturating/catoptron.This selectivity is saturating/and the function of catoptron is, is total reflection to the Ultra-Violet Laser of selecting exposure, and be transmissive to visible laser.By above-mentioned setting, just make visible laser and Ultra-Violet Laser can enter interference system simultaneously, form interference fringe in the identical photolithographic substrates position for the treatment of.
If the wavelength of Ultra-Violet Laser is λ
1, the wavelength of visible laser is λ
2, the refractive index of material is n on the photolithographic substrates, and then in the double light path Ultra-Violet Laser holographic lithography system of Fig. 3, the incident angle of two beam interferometer laser is 2 θ, and their fringe periods of forming on photolithographic substrates are respectively so:
D
1And D
2It is respectively the fringe period of Ultra-Violet Laser light and visible laser.According to (2) and (3) formula, just can obtain D
1And D
2Relation:
D
2Be that we can Direct observation and measure,, regulate D according to (4) formula
2Just can obtain corresponding D
1So just realized in Ultra-Violet Laser holographic lithography system, regulating at any time the expectation of Ultra-Violet Laser interference fringe, just online adjusting.This method can disposablely detect the desired interference fringe characteristic of photoetching process, has shortened the photoetching process cycle, has saved lithography experiments and has accompanied sheet.
In addition, those of ordinary skill in the art can rationally be provided with the position of visible laser and catoptron according to the volume of equipment, the requirement of size.Fig. 4 is second Organization Chart that increases Ultra-Violet Laser interference fringe auxiliary detection device of the present invention in double light path Ultra-Violet Laser holographic lithography system.As shown in Figure 4, the catoptron 1 that can keep among Fig. 2 is constant, and makes visible light laser just parallel in the exit with ultraviolet laser, and at this moment, the laser that visible laser sent can be introduced by optical fiber, also can be by the direct outgoing of visible laser.Fig. 5 is the Organization Chart that increases Ultra-Violet Laser interference fringe auxiliary detection device of the present invention in monochromatic light road Ultra-Violet Laser holographic lithography system.Among Fig. 4 and Fig. 5, the realization principle of Ultra-Violet Laser interference fringe auxiliary detection device is same as above, is not described in detail herein.
Among the present invention, the auxiliary detection laser of visible light wave range can not conflict mutually with the Ultra-Violet Laser that is used for photoetching, and its wavelength can be preferably the most responsive 555nm of human eye between 535-575nm; The power of auxiliary detection laser is between 10-100mW.
In sum, the present invention is a kind of auxiliary detection device and method of Ultra-Violet Laser interference fringe, can realize cycle, the shape of Real Time Observation Ultra-Violet Laser interference fringe.This technology may be used on shortening the holographic lithography process cycle in the field such as ultraviolet holographic lithography, saves the holographic lithography cost.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the auxiliary detection device of a Ultra-Violet Laser interference fringe is characterized in that, this device is applied to comprise in the Ultra-Violet Laser holographic lithography system: visible laser and auxiliary detection light path, wherein:
This visible laser is used to produce the auxiliary detection laser of visible light wave range, and the wavelength of this auxiliary detection Wavelength of Laser and described Ultra-Violet Laser satisfies preset relation;
This auxiliary detection light path, by described auxiliary detection laser in described Ultra-Violet Laser holographic lithography system the path of process, two way light paths of described auxiliary detection light path are parallel respectively with the two-way coherent laser that forms described Ultra-Violet Laser interference fringe, this two ways light path is in the interference fringe for the treatment of to form on the photolithographic substrates visible light wave range, and the interference fringe of this visible light wave range is used for the described Ultra-Violet Laser interference fringe of auxiliary detection.
2. the auxiliary detection device of Ultra-Violet Laser interference fringe according to claim 1 is characterized in that, described device also comprises: selectivity is saturating/and catoptron,
This selectivity is saturating/catoptron, be positioned at the front end of beam splitting arrangement that described Ultra-Violet Laser holographic lithography system forms the sub-light path of the relevant laser of described two-way, and the rear end of described visible laser; Described Ultra-Violet Laser by described selectivity saturating/mirror reflects after the described beam splitting arrangement of incident, the described selectivity of described auxiliary detection laser-transmitting is saturating/catoptron after the described beam splitting arrangement of incident.
3. the auxiliary detection device of Ultra-Violet Laser interference fringe according to claim 2 is characterized in that: described selectivity is saturating/and first catoptron of catoptron for described Ultra-Violet Laser is reflected.
4. the auxiliary detection device of Ultra-Violet Laser interference fringe according to claim 3 is characterized in that: this device also comprises: second catoptron;
This second catoptron, between described first catoptron and described beam splitting arrangement, be used for from the described Ultra-Violet Laser of the first catoptron incident and auxiliary detection laser-bounce to beam splitting arrangement.
5. the auxiliary detection device of Ultra-Violet Laser interference fringe according to claim 3, it is characterized in that: before/catoptron saturating through described selectivity, the light path of described Ultra-Violet Laser is vertical with the light path of auxiliary detection laser, and described selectivity is saturating/and the input path of catoptron and Ultra-Violet Laser is at 45; Described selectivity is saturating/and the input path of catoptron and auxiliary detection laser is at 45.
6. the auxiliary detection device of Ultra-Violet Laser interference fringe according to claim 2 is characterized in that: described selectivity is saturating/catoptron is total reflection to described Ultra-Violet Laser, to the transmissivity of described auxiliary detection laser more than or equal to 50%.
7. according to the auxiliary detection device of each described Ultra-Violet Laser interference fringe among the claim 1-6, it is characterized in that: the wavelength of described visible laser is between 535-575nm; The power of described visible laser is between 10-100mW.
8. according to the auxiliary detection device of each described Ultra-Violet Laser interference fringe among the claim 1-6, it is characterized in that: the Ultra-Violet Laser holographic lithography system that this device is used is the Ultra-Violet Laser holographic lithography system of monochromatic light road or double light path.
9. the aided detection method of a Ultra-Violet Laser interference fringe is characterized in that, this method is applied to comprise in the Ultra-Violet Laser holographic lithography system:
Visible laser produces the auxiliary detection laser of visible light wave range;
Two way light paths of this auxiliary detection laser are parallel respectively with the two-way coherent laser that forms described Ultra-Violet Laser interference fringe, be used in the interference fringe for the treatment of to form on the photolithographic substrates visible light wave range, the interference fringe of this visible light wave range is used for the described Ultra-Violet Laser interference fringe of auxiliary detection.
10. the aided detection method of Ultra-Violet Laser interference fringe according to claim 9 is characterized in that, the step that described visible laser produces the auxiliary detection laser of visible light wave range also comprises afterwards:
Be positioned at described Ultra-Violet Laser holographic lithography system form the selectivity of beam splitting arrangement front end of sub-light path of the relevant laser of described two-way saturating/catoptron, described Ultra-Violet Laser is reflected into described beam splitting arrangement; And described auxiliary detection laser-transmitting gone into described beam splitting arrangement.
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Cited By (4)
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| CN103630953A (en) * | 2012-08-22 | 2014-03-12 | 北京京东方光电科技有限公司 | Prism film, and preparation method and apparatus thereof |
| CN104216239A (en) * | 2014-09-16 | 2014-12-17 | 厦门润晶光电有限公司 | Splicing type laser interference lithography equipment suitable for manufacturing large-area nano structure |
| CN109748238A (en) * | 2017-11-08 | 2019-05-14 | 厦门大学 | A kind of large area, the preparation method of uniform nanometer dimerization volume array |
| CN109870884A (en) * | 2019-01-23 | 2019-06-11 | 长春理工大学 | A kind of laser interference shifts backward system |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103630953A (en) * | 2012-08-22 | 2014-03-12 | 北京京东方光电科技有限公司 | Prism film, and preparation method and apparatus thereof |
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| CN109748238A (en) * | 2017-11-08 | 2019-05-14 | 厦门大学 | A kind of large area, the preparation method of uniform nanometer dimerization volume array |
| CN109748238B (en) * | 2017-11-08 | 2020-03-17 | 厦门大学 | Preparation method of large-area and uniform nano dimer array |
| CN109870884A (en) * | 2019-01-23 | 2019-06-11 | 长春理工大学 | A kind of laser interference shifts backward system |
| CN109870884B (en) * | 2019-01-23 | 2021-01-19 | 长春理工大学 | Laser interference backward transfer system |
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Application publication date: 20110803 |