CN109860369B - Semiconductor light-emitting device and preparation method thereof - Google Patents
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- 238000002360 preparation method Methods 0.000 title abstract description 4
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- 238000005520 cutting process Methods 0.000 claims abstract description 37
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- 238000000034 method Methods 0.000 claims description 22
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- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
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Abstract
The invention provides a preparation method of a semiconductor light-emitting device, which comprises the following steps: providing a substrate, forming a plurality of light emitting structures on the substrate, wherein cutting areas are included among the light emitting structures; forming an insulating protection layer on the substrate above the light emitting structure and outside the light emitting structure; forming a metal sacrificial layer over the insulating protection layer, the sacrificial layer being formed on the insulating protection layer over the cutting region between the light emitting structures and extending in a cutting direction. When the semiconductor light-emitting device is cut and scribed by adopting laser, the sacrificial layer is firstly etched, can absorb the energy of the laser and is used as an energy buffer layer and a diffusion layer, so that the damage of the insulation protection layer, such as breakage and the like caused by sudden energy increase, is avoided. Under the action of laser, the sacrificial layer is burned by the laser, so that residues influencing the semiconductor light-emitting device cannot be left, and the performance of the semiconductor light-emitting device cannot be influenced.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuits, in particular to a semiconductor light-emitting device and a preparation method thereof.
Background
Semiconductor light emitting devices, such as light emitting diodes and laser diodes, are receiving increasing attention for their research and market applications due to their excellent light emitting characteristics. For example, among them, GaN-based light emitting diodes and laser diodes have been widely researched and commercially used, particularly in laser displays and laser projection. At present, the main bottleneck of GaN-based light emitting diodes and laser diodes is high-power GaN blue and green laser diodes, and the structure of the laser diodes is mainly an edge-emitting ridge waveguide structure.
For using side emissionThe laser diode with ridge waveguide structure, the current LD process, adopts low temperature SiO2Covering on GaN, adhesion is poor; deposition of SiO on the surface of a diode2In layers, with SiO2The stress increases with the increase of the layer thickness. The laser diode is usually scribed by laser, and the common laser light source is a point connection line, firstly, SiO is needed to be scribed2The layer is laser etched during which process, due to the SiO2The adhesion between the layer and the substrate is poor and there is a cause of stress itself, SiO2The layers are prone to cracking, so that the diode is at risk of leakage. For ridge waveguide structures, SiO2The breakdown of (b) can reduce the optical field confinement, resulting in reduced device performance.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, the present invention provides a semiconductor light emitting device and a method for fabricating the same, wherein a sacrificial layer aligned with a cutting region is formed above an insulating protection layer of the semiconductor light emitting device, and the sacrificial layer is etched first during laser scribing. The sacrificial layer can absorb laser energy and is used as an energy buffer layer to effectively protect the insulating protective layer from being damaged by cracking and the like.
According to a first aspect of the present invention, there is provided a semiconductor light emitting device comprising:
a substrate;
a plurality of light emitting structures formed on the substrate with a cutting region formed therebetween;
an insulating protective layer formed over the light emitting structure and on the substrate other than the light emitting structure;
a sacrificial layer formed on the insulating protection layer over the cutting region between the light emitting structures and extending in a cutting direction.
Optionally, the substrate comprises a GaN-based substrate, the light emitting structure comprises a laser diode or a light emitting diode formed on the GaN-based substrate, and the laser diode or the light emitting diode comprises a mesa structure formed on the GaN-based substrate.
Optionally, the substrate includes a conductive base plate, the light emitting structure includes a light emitting diode or a laser diode formed on the conductive base plate, and the light emitting diode or the laser diode is bonded and connected with the conductive base plate through a metal bonding layer.
Optionally, the sacrificial layer comprises a stripe-shaped sacrificial layer.
Optionally, the width of the strip-shaped sacrificial layer is between 2 μm and 20 μm, and the thickness thereof is between
Optionally, the sacrificial layer comprises a metal sacrificial layer.
Optionally, the metal sacrificial layer comprises any one of the group consisting of Ti, Al, Au, Ni, Cr, Pt, Cu, and combinations of any two or more thereof.
Optionally, the insulating protection layer comprises SiO2Or SiN.
According to a second aspect of the present invention, there is provided a semiconductor light emitting device manufacturing method comprising the steps of:
providing a substrate, forming a plurality of light emitting structures on the substrate, wherein cutting areas are included among the light emitting structures;
forming an insulating protection layer on the substrate above the light emitting structure and outside the light emitting structure;
forming a sacrificial layer over the insulating protection layer, the sacrificial layer being formed on the insulating protection layer over the cutting region between the light emitting structures and extending in a cutting direction.
Optionally, the substrate comprises a GaN-based substrate, the light emitting structure comprises a laser diode or a light emitting diode formed on the GaN-based substrate, and the laser diode or the light emitting diode comprises a mesa structure formed on the GaN-based substrate.
Optionally, the substrate includes a conductive base plate, the light emitting structure includes a light emitting diode or a laser diode formed on the conductive base plate, and the light emitting diode or the laser diode is bonded and connected with the conductive base plate through a metal bonding layer.
Optionally, dicing the semiconductor light emitting device along the sacrificial layer is further included.
Optionally, the method further comprises removing the sacrificial layer remaining on the insulating protection layer after cutting.
Optionally, the sacrificial layer comprises a stripe-shaped sacrificial layer.
Optionally, the width of the strip-shaped sacrificial layer is between 2 μm and 20 μm, and the thickness thereof is between
Optionally, the sacrificial layer comprises a metal sacrificial layer.
Optionally, the metal sacrificial layer comprises any one of the group consisting of Ti, Al, Au, Ni, Cr, Pt, Cu, and combinations of any two or more thereof.
Optionally, the insulating protection layer comprises SiO2Or SiN.
As described above, the semiconductor light emitting device and the method for manufacturing the same of the present invention have the following technical effects:
a sacrificial layer is formed over the insulating protection layer of the semiconductor light emitting device, the sacrificial layer being formed on the insulating protection layer over the cutting region of the semiconductor light emitting device. When the semiconductor light-emitting device is cut and scribed by adopting laser, the sacrificial layer is firstly etched, and can absorb the energy of the laser and serve as an energy buffer layer and a diffusion layer, so that the energy is slowly diffused to the insulating protective layer, and the insulating protective layer is prevented from being damaged due to cracking and the like caused by sudden energy increase.
In addition, the sacrificial layer can be burned by laser under the action of laser, so that residues influencing the semiconductor light-emitting device cannot be left, and the performance of the semiconductor light-emitting device cannot be influenced.
Drawings
The features and advantages of the present invention will be more clearly understood by reference to the accompanying drawings, which are illustrative and not to be construed as limiting the invention in any way, and in which:
fig. 1 is a flowchart illustrating a method for manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
Fig. 2 shows a schematic structural view of forming a GaN-based epitaxial wafer on a substrate.
Fig. 3 is a schematic diagram illustrating the formation of P-type mesas in the structure shown in fig. 2.
Fig. 4 is a schematic structural diagram illustrating the P-type contact layer formed on the P-type mesa shown in fig. 3.
Fig. 5 is a schematic view of a structure in which an insulating protective layer is formed on the structure shown in fig. 4.
Fig. 6 is a schematic structural view illustrating the formation of a P-type electrode on the structure shown in fig. 5.
Fig. 7 is a schematic diagram of a structure in which a sacrificial layer is formed on the structure shown in fig. 6.
Fig. 8 is a schematic view showing a structure in which the substrate is removed to expose the n-type surface of the GaN-based epitaxial wafer in the structure shown in fig. 7.
Fig. 9 is a schematic structural view showing the formation of an N-type electrode on the N-type surface of the GaN-based epitaxial wafer shown in fig. 8.
Fig. 10 is a schematic structural diagram illustrating a method for manufacturing a semiconductor light emitting device according to a third embodiment of the present invention, in which a conductive substrate is provided and a light emitting diode device is formed.
Fig. 11 is a schematic structural view illustrating the formation of an insulating protection layer over the structure of fig. 10.
FIG. 12 is a schematic diagram illustrating the formation of a sacrificial layer over the structure shown in FIG. 11.
Reference numerals
10 substrate
100 buffer layer
101 boss structure
102 cutting area
103 metal substrate
104 insulating protective layer
105P type electrode
106P type contact layer
107 sacrificial layer
108N type layer
109 active layer
110P type layer
111 patterned photoresist
200 conductive substrate
201 light emitting diode
202 cutting area
203 electrode
204 protective layer of insulating layer
205 sacrificial layer
206 metal bonding layer
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
The present embodiment provides a method for manufacturing a semiconductor light emitting device, as shown in fig. 1, the method including the steps of:
a method for manufacturing a semiconductor light emitting device is characterized by comprising the following steps:
providing a substrate to form a plurality of light emitting structures on the substrate, wherein cutting areas are included among the light emitting structures;
forming an insulating protection layer on the substrate above the light emitting structure and outside the light emitting structure;
forming a sacrificial layer over the insulating protection layer, the sacrificial layer being formed on the insulating protection layer over the cutting region between the light emitting structures and extending in a cutting direction.
In this embodiment, the substrate includes a GaN-based substrate, and the light emitting structure includes a laser diode or a light emitting diode formed on the GaN-based substrate. This embodiment exemplifies a laser diode formed on the GaN-based substrate, the laser diode including a mesa structure formed on the GaN-based substrate.
Specifically, a plurality of laser diodes may be formed by a method commonly used in the art. As shown in fig. 2, a temporary substrate 10 is first provided, and the temporary substrate 10 may be a conventional sapphire substrate. A GaN-based epitaxial wafer including a buffer layer 100, an N-type layer 108, an active layer 109, and a P-type layer 110 is formed on the temporary substrate 10. Then, as shown in fig. 3, the N-type layer 108, the active layer 109, and the P-type layer 110 form a mesa structure 101 above the buffer layer 100. The land structures form cutting areas 102 between the laser diodes.
Then, a P-type contact layer material, which in the preferred embodiment of the present embodiment may be ITO (indium tin oxide) or Ni, Pd, Cr, Ti, Al, Au or any combination thereof, is deposited over the mesa structures 101. Then, a patterned photoresist 111 is formed above the P-type contact layer material, the P-type contact layer material is etched by using the photoresist as a mask layer, the P-type contact layer shown in fig. 4 is finally formed, and the patterned photoresist 111 is remained. An insulating protective layer 104 is then deposited on the surface of the structure shown in fig. 4 and the sidewalls of the mesa structures 101, covering the top and side surfaces of the mesa structures 101 and covering the buffer layer 100 outside the mesa structures. In a preferred embodiment of this embodiment, the insulating protective layer comprises SiO2Or an insulating material such as SiN. The insulating protection layer 104 above the patterned photoresist 111 is then removed and the patterned photoresist 111 is removed, resulting in the structure shown in fig. 5 exposing the P-type contact layer 106.
As shown in fig. 6, a P-type electrode 105, which may be Cr, Pt, Ni, Pd, Ti, Al, Au, or any combination thereof, is then formed over the P-type contact layer 106, thereby forming a plurality of laser diodes. Then, as shown in fig. 7, on the basis of forming the above-described laser diodes, a sacrifice layer 107 is formed on the insulating protection layer 104 above the dicing area 102 between the laser diodes, the sacrifice layer extending in the dicing direction.
Then, the temporary substrate 10 is removed, as shown in fig. 8, the n-type surface of the buffer layer 100 is exposed, and simultaneously, the n-type surface of the buffer layer 100 is etched and cleaned, and the decomposed surface with poor crystal quality is removed, so as to obtain the low-resistance n-type surface ohmic contact. Thereafter, as shown in fig. 9, a metal substrate 103 is formed on the obtained low-resistance N-type ohmic contact surface, and the metal substrate 103 simultaneously serves as an N-type electrode of the laser diode. The material of the metal substrate 103 includes: au or Ti or Al components.
In a preferred embodiment of this embodiment, the sacrificial layer is formed as a strip-shaped sacrificial layer extending along the cutting direction, the width of the strip-shaped sacrificial layer is between 2 μm and 20 μm, and the thickness of the strip-shaped sacrificial layer is between 2 μm and 20 μm
In another preferred embodiment of the present embodiment, the sacrificial layer may be a metal sacrificial layer, which may be any one of the group consisting of Ti, Al, Au, Ni, Cr, Pt, Cu, and a combination of any two or more thereof.
In a more preferred embodiment, the material of the metal sacrificial layer is the same as the material of the P-type electrode 105, for example, both Ti or Au. At this time, the P-type electrode 105 and the sacrificial layer 107 may be simultaneously formed by a masking technique.
In a preferred embodiment of this embodiment, the method further includes the step of dicing the semiconductor light emitting device along the sacrificial layer. The semiconductor light emitting device is cut, for example, with a laser. In this cutting process, a laser is first applied to the sacrificial layer, which absorbs the laser energy and at the same time transfers the energy diffusion to the insulating protective layer, for example SiO2In the protective layer. The sacrificial layer is used as an energy buffer layer and a diffusion layer, so that energy is slowly diffused to the insulating protective layer, and the insulating protective layer is prevented from being damaged due to cracking and the like caused by sudden energy increase。
In the cutting process, the sacrificial layer can be gradually burnt off due to the absorption of laser energy, so that residues influencing the semiconductor light-emitting device cannot be left, and the performance of the semiconductor light-emitting device cannot be influenced.
In a more preferred embodiment of this embodiment, in order to ensure that there is no residue of the sacrificial layer material, a step of further removing the sacrificial layer material is included. Thereby further ensuring good performance of the device.
Example two
The present embodiment provides a method for manufacturing a semiconductor light emitting device, which is the same as the embodiments and will not be described again, except that:
in this embodiment, a GaN single crystal substrate, which may be an n-type GaN single crystal substrate, is used as the epitaxial growth substrate. And directly growing epitaxial layers such as an active layer, a P-type layer and the like on the n-type GaN single crystal substrate. And the boss structure, the P-type contact layer, the insulating protection layer, the P-type electrode and the sacrificial layer in the first embodiment are sequentially formed. Then an N-type electrode is formed.
In this embodiment, before forming the N-type electrode, the N-type GaN single crystal substrate is first ground to thin, and is then etched and cleaned to remove the decomposed surface with poor crystal quality, so as to obtain a low-resistance N-type ohmic contact. And then manufacturing a metal substrate on the obtained low-resistance N-type surface ohmic contact surface, wherein the metal substrate is simultaneously used as an N-type electrode of the laser diode.
EXAMPLE III
The present embodiment also provides a method for manufacturing a semiconductor light emitting device,
the same parts as those in the first embodiment are not described again, but the differences are as follows:
in this embodiment, the substrate includes a conductive substrate, the light emitting structure includes a light emitting diode or a laser diode formed on the conductive substrate, and the light emitting diode or the laser diode is bonded and connected to the conductive substrate through a metal bonding layer.
This embodiment will be described by taking a light emitting diode formed on the conductive substrate as an example. As shown in fig. 10, a conductive substrate 200 is first provided, and a light emitting diode 201 is connected above the conductive substrate, and the light emitting diode 201 is bonded and connected with the conductive substrate through a metal bonding layer 206. Between adjacent leds there is a cut area 202. Then, an insulating protection layer 204 is deposited on the surface and the sidewall of the led 201 and the surface of the conductive substrate, and then the insulating protection layer is patterned, an electrode opening is formed above the led chip, and a conductive material is filled in the electrode opening to form an electrode 203, as shown in fig. 11.
As shown in fig. 12, a sacrificial layer 205 is formed on the insulating protective layer 204 over the cutting region between the light emitting diodes 201 and extending in the cutting direction.
In the cutting process, as in the first embodiment, the laser is first applied to the sacrificial layer, which absorbs the laser energy and simultaneously transfers the energy diffusion to the insulating protective layer, such as SiO2In the protective layer. The sacrificial layer is used as an energy buffer layer and a diffusion layer, so that energy is slowly diffused to the insulating protection layer, and the insulating protection layer is prevented from being damaged due to cracking and the like caused by sudden energy increase.
In the cutting process, the sacrificial layer can be gradually burnt off due to the absorption of laser energy, so that residues influencing the semiconductor light-emitting device cannot be left, and the performance of the semiconductor light-emitting device cannot be influenced.
In a more preferred embodiment of this embodiment, in order to ensure that there is no residue of the sacrificial layer material, a step of further removing the sacrificial layer material is included. Thereby further ensuring good performance of the device.
Example four
The present embodiment provides a semiconductor light emitting device including a substrate; a plurality of light emitting structures formed on the substrate with a cutting region formed therebetween; an insulating protective layer formed over the light emitting structure and on the substrate other than the light emitting structure; a sacrificial layer formed on the insulating protection layer over the cutting region between the light emitting structures and extending in a cutting direction.
Referring to fig. 1-9, in a preferred embodiment of this embodiment, the substrate comprises a GaN-based substrate, the light emitting structure comprises a laser diode or a light emitting diode formed on the GaN-based substrate, the laser diode or the light emitting diode comprises a mesa structure formed on the GaN-based substrate;
in another preferred embodiment of this embodiment, the semiconductor light emitting device comprises one or more of the laser diodes or light emitting diodes cut along the sacrificial layer 107.
In a preferred embodiment of this embodiment, the sacrificial layer is formed as a strip-shaped sacrificial layer extending along the cutting direction, the width of the strip-shaped sacrificial layer is between 2 μm and 20 μm, and the thickness of the strip-shaped sacrificial layer is between 2 μm and 20 μm
In another preferred embodiment of the present embodiment, the sacrificial layer may be a metal sacrificial layer, which may be any one of the group consisting of Ti, Al, Au, Ni, Cr, Pt, Cu, and a combination of any two or more thereof.
In another preferred embodiment of this embodiment, in the preferred embodiment of this embodiment, the insulating protection layer includes SiO2Or an insulating material such as SiN.
EXAMPLE five
The present embodiment provides a semiconductor light emitting device, and the same parts as those in the third embodiment are not described again, except that:
referring to fig. 10-12, the substrate includes a conductive base plate, and the light emitting structure includes a light emitting diode or a laser diode formed on the conductive base plate, and the light emitting diode or the laser diode is bonded and connected with the conductive base plate through a metal bonding layer.
In a preferred embodiment of this embodiment, the semiconductor device includes one or more of the light emitting diodes or laser diodes cut from the semiconductor light emitting device along the sacrificial layer.
In summary, the semiconductor light emitting device and the manufacturing method thereof of the present invention have the following technical effects:
a sacrificial layer is formed over the insulating protection layer of the semiconductor light emitting device, the sacrificial layer being aligned with the cut region of the semiconductor light emitting device. When the semiconductor light-emitting device is cut and scribed by adopting laser, the sacrificial layer is firstly etched, and can absorb the energy of the laser and serve as an energy buffer layer and a diffusion layer, so that the energy is slowly diffused to the insulating protective layer, and the insulating protective layer is prevented from being damaged due to cracking and the like caused by sudden energy increase.
In addition, the sacrificial layer can be burned by laser under the action of laser, so that residues influencing the semiconductor light-emitting device cannot be left, and the performance of the semiconductor light-emitting device cannot be influenced.
The foregoing embodiments are merely illustrative of the principles of this invention and its efficacy, rather than limiting it, and various modifications and variations can be made by those skilled in the art without departing from the spirit and scope of the invention, which is defined in the appended claims.
Claims (16)
1. A semiconductor light emitting device, comprising:
a substrate;
a plurality of light emitting structures formed on the substrate with a cutting region formed therebetween;
an insulating protective layer formed over the light emitting structures and covering the cutting regions between the light emitting structures;
a metal sacrificial layer formed only on the insulating protection layer over the cutting region between the light emitting structures and extending in a cutting direction.
2. The semiconductor light emitting device of claim 1, wherein the substrate comprises a GaN-based substrate, wherein the light emitting structure comprises a laser diode or a light emitting diode formed on the GaN-based substrate, and wherein the laser diode or the light emitting diode comprises a mesa structure formed on the GaN-based substrate.
3. The semiconductor light emitting device of claim 1, wherein the substrate comprises a conductive base plate, and the light emitting structure comprises a light emitting diode or a laser diode formed on the conductive base plate, the light emitting diode or the laser diode being bonded to the conductive base plate through a metal bonding layer.
4. The semiconductor light emitting device according to claim 1, wherein the metal sacrificial layer comprises a stripe-shaped metal sacrificial layer.
5. The semiconductor light-emitting device according to claim 4, wherein the width of the metal sacrificial layer is between 2 μm and 20 μm, and the thickness of the metal sacrificial layer is between 2 μm and 20 μm
6. The semiconductor light emitting device of claim 1, wherein the metal sacrificial layer comprises any one of the group consisting of Ti, Al, Au, Ni, Cr, Pt, Cu, and combinations of any two or more thereof.
7. The semiconductor light emitting device according to claim 1, wherein the insulating protective layer comprises SiO2Or SiN.
8. A method for manufacturing a semiconductor light emitting device is characterized by comprising the following steps:
providing a substrate, forming a plurality of light emitting structures on the substrate, wherein cutting areas are included among the light emitting structures;
forming an insulating protection layer over the light emitting structures and on a cutting region between the light emitting structures;
forming a metal sacrificial layer over the insulating protection layer, the metal sacrificial layer being formed only on the insulating protection layer over the cutting region between the light emitting structures and extending in a cutting direction.
9. The method of claim 8, wherein the substrate comprises a GaN-based substrate, the light-emitting structure comprises a laser diode or a light-emitting diode formed on the GaN-based substrate, and the laser diode or the light-emitting diode comprises a mesa structure formed on the GaN-based substrate.
10. The method as claimed in claim 8, wherein the substrate comprises a conductive substrate, the light-emitting structure comprises a light-emitting diode or a laser diode formed on the conductive substrate, and the light-emitting diode or the laser diode is bonded and connected with the conductive substrate through a metal bonding layer.
11. The method of manufacturing according to claim 8, further comprising dicing the semiconductor light emitting device along the metal sacrificial layer.
12. The method according to claim 11, further comprising removing the metal sacrificial layer remaining on the insulating protective layer after dicing.
13. The production method according to claim 8, wherein the metal sacrificial layer comprises a stripe-shaped metal sacrificial layer.
14. The method according to claim 13, wherein the metal sacrificial layer has a width of 2 μm to 20 μm and a thickness of 2 μm to 20 μm
15. The method of claim 8, wherein the metal sacrificial layer comprises any one of the group consisting of Ti, Al, Au, Ni, Cr, Pt, Cu, and a combination of any two or more thereof.
16. The method according to claim 8, wherein the insulating protective layer comprises SiO2Or SiN.
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Effective date of registration: 20231031 Address after: Shi Jing Zhen Yuan Qian Cun, Nan'an City, Quanzhou City, Fujian Province, 361009 Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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