CN109844900A - It is arranged for the magnet of sputtering sedimentation source and magnetron sputtering sedimentary origin - Google Patents
It is arranged for the magnet of sputtering sedimentation source and magnetron sputtering sedimentary origin Download PDFInfo
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- CN109844900A CN109844900A CN201680090026.7A CN201680090026A CN109844900A CN 109844900 A CN109844900 A CN 109844900A CN 201680090026 A CN201680090026 A CN 201680090026A CN 109844900 A CN109844900 A CN 109844900A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
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Abstract
According to one aspect of the present disclosure, a kind of magnet arrangement (100) for sputtering sedimentation source is provided.The magnet arrangement includes the first magnet (110) and the second magnet (120), and first magnet (110) and the second magnet (120) are suitable for confining a plasma in plasma confinement zone (150)；Element (115) are influenced at least one field comprising magnetisable material, at least one described field influences element (115) and is adapted for carrying out local displacement of the plasma confinement zone towards at least one influence element.According to second aspect, a kind of magnetron sputtering sedimentary origin (400) with magnet arrangement and a kind of method using the magnetron sputtering sedimentary origin deposition film on substrate for including magnet arrangement are provided.
Description
Technical field
This disclosure relates to a kind of magnet arrangements for sputtering sedimentation source.Present disclosure is further to a kind of use
In the magnetron sputtering sedimentary origin of the deposition film on substrate, and it is related to a kind of being deposited on substrate using magnetron sputtering sedimentary origin
The method of film.More specifically, the magnet arrangement is configured for magnetic control and splashes this disclosure relates to a kind of magnet arrangement
Penetrate, and be specifically configured for include rotatable target rotation target assembly.
Background technique
It is the relevant issues in many technical fields that the thin layer with height layer uniformity is formed on substrate.For example,
In the field thin film transistor (TFT) (TFT), the thickness uniformity and electrical characteristics uniformity of one or more sedimentaries may be for reliable
It is problematic that ground, which manufactures display channel region,.
One kind on substrate cambial method be sputtering, sputtering have been developed as different manufacturing fields (such as
In the manufacture of TFT) a kind of valuable method.During sputtering, by with the high energy particle of plasma (for example, lazy
Property or reactant gas excited ion) bombardment sputter target material, and eject atom from the sputter target material.The original of injection
Son can be deposited on substrate, allow to form sputter material layer on substrate.
In magnetron sputtering sedimentary origin, magnet arrangement is usually placed in behind the target material of sputtering target.It is arranged and is produced by magnet
Raw magnetic field may adapt to confine a plasma in the plasma confinement zone adjacent with the sputtering surface of sputtering target.
The ionization probability of sputter gas in plasma confinement zone can be with the ionization rate phase outside plasma confinement zone
Than greatly increasing.
However, it may be difficult to realize uniform and consistent utilization of the target material on the sputtering surface of sputtering target.For example,
Under some cases, some sections of sputtering surface may more strongly be sputtered than other sections, this may cause to target not
It is symmetrical to utilize.
Therefore it provides magnet arrangement and magnetron sputtering sedimentary origin can be beneficial, the magnet arrangement and magnetron sputtering
Sedimentary origin can obtain the more evenly utilization of sputtering target.
Summary of the invention
In view of above-mentioned, provide a kind of magnet for sputtering sedimentation source and arrange, a kind of magnetron sputtering sedimentary origin and
The method of deposition film on substrate.
According to one aspect of the present disclosure, a kind of magnet arrangement for sputtering sedimentation source is provided.The magnet
Arrangement includes: the first magnet and the second magnet, and first magnet and the second magnet are suitable for confining a plasma in plasma
In body restricted area；Element is influenced at least one field comprising magnetisable material, at least one described field influences element and is suitable for
Realize local displacement of the plasma confinement zone towards at least one influence element.
A kind of magnetron sputtering sedimentary origin is provided according to another aspect,.The magnetron sputtering sedimentary origin includes: rotary target group
Part, the rotation target assembly are suitable for rotating around the axis of rotation sputtering target；It is arranged at least one magnet, at least one described magnet
Arrangement is connected to the rotation target assembly and is suitable for confining a plasma in the plasma adjacent with the sputtering surface of sputtering target
In body restricted area.The magnet arrangement includes the first magnet and the second magnet；With at least one field comprising magnetisable material
Element is influenced, at least one described influence element is adapted for carrying out plasma confinement zone towards at least one described influence
The local displacement of element.
A kind of magnetron sputtering sedimentary origin of the use including magnet arrangement deposition film on substrate is provided according to another aspect,
Method.The described method includes: generating plasma；It is adjacent with the sputtering surface of target etc. with being limited in the plasma
In gas ions restricted area, wherein magnet arrangement includes at least one influence element comprising magnetisable material, it is described
At least one influences element and realizes local displacement of the plasma confinement zone towards at least one influence element.
Other aspects, the advantages and features of present disclosure are apparent from dependent claims, description and attached drawing.
Detailed description of the invention
It therefore, can be by reference to embodiment in a manner of it the features described above of present disclosure can be understood in detail
The present disclosure of above-mentioned brief overview is more particularly described.Attached drawing is related to the embodiment of present disclosure, and
It is described below.Some embodiments are described in the accompanying drawings, and are described in detail in the following description.
Figure 1A shows the schematic plan according to the magnet of implementations described herein arrangement 100；
The magnet that Figure 1B and Fig. 1 C shows Figure 1A is arranged in schematic in section Cl (Figure 1B) and section C2 (Fig. 1 C)
Cross-sectional view；
Fig. 2A shows the schematic plan according to the magnet of implementations described herein arrangement 200；
The magnet that Fig. 2 B and Fig. 2 C show Fig. 2A is arranged in schematic in section C3 (Fig. 2 B) and section C3 (Fig. 2 C)
Cross-sectional view；
Fig. 3 shows the schematic plan according to the magnet of implementations described herein arrangement 300；
Fig. 4 A and Fig. 4 B show the magnetron sputtering according to implementations described herein in two different sections
Sedimentary origin 400；With
Fig. 5 is the flow chart for illustrating the method for the deposition film on substrate according to embodiment described herein.
Specific embodiment
Now with detailed reference to the various embodiments of present disclosure, one or more examples of the embodiment exist
It is shown in attached drawing.Each embodiment is to be provided and illustrating to the present invention, and be not meant as limitation.For example,
The feature that a part as an embodiment shows or describes can use in other embodiments or implement with other
Mode is used in combination to generate another embodiment.Present disclosure is intended to include such modifications and variations.
In being described below of attached drawing, identical appended drawing reference indicates corresponding or similar component.In general, only description is individual
The difference of embodiment.Unless otherwise prescribed, the description of a part or aspect in an embodiment is also applied for another
Corresponding part or aspect in embodiment.
In sputtering deposition device, can in sputtering chamber under vacuum, i.e., under subatmospheric pressure, such as
Plasma is generated under 1 millibar or lower pressure.Plasma is interpreted as quasi-neutrality many-particle system, and form is certainly
By the gas blend of electronics and ion and possible neutral particle (i.e. atom, molecule or free radical).Plasma is just
The negative potential that ion can be applied to the cathode including sputtering target attracts.Cation can hit sputtering target and strike lower granule
Son, the small particles then can be deposited on substrate with the forming layer on substrate.Lower particle is struck from sputtering target referred to as " to splash
It penetrates ".Plasma can contain ionized gas, and the ionized gas can be for example inertia in the case where non-reacted sputtering
Gas, such as argon gas.In the case where reactive sputtering, such as oxygen can be used alone or be used in combination with inert gas.
Ion for sputtering technology can be generated by the collision of gas atom and electronics in glow discharge, and
It can accelerate towards sputtering target, the sputtering target can be set on negative potential.In order to improve ionization rate and with sputtering target phase
The more preferable positioning of plasma is provided in adjacent region, can be utilized near sputtering target (such as on the first side of sputtering target)
Magnet arranges (i.e. so-called magnetron), to limit and to be located in second side of sputtering target by plasma.By magnet cloth
The magnetic field that the magnet set generates can confine a plasma near the sputtering surface of sputtering target.
The term as used herein " magnet arrangement " or " magnetron " can refer to generate the unit in such magnetic field, described
Magnetic field is configured as in the plasma confinement zone that sputter plasma is located in magnet arrangement front.In general, magnet cloth
Setting may include permanent magnet.In the case where rotatable sputter target, magnet arrangement can be arranged in inside sputtering target, so that with electrochondria
Son can be trapped in the generated magnetic field in the region outside sputtering target.In the case where plane sputtering target, permanent magnet
It can be arranged in behind sputtering target, the generated magnetic in the region that charged particle is trapped in front of sputtering target
In.In some embodiments, magnet arrangement includes magnetic yoke.
Charge by arranging the interaction in the magnetic field generated with the electric field generated by cathode by magnet, in plasma
It is mobile that carrier is no longer predominantly parallel to electric field, but moves along cycloid electron trajectory.Because electronics is due to its lower matter
Amount and deflection radius be much smaller than ion deflection radius, so electron concentration is in plasma confinement zone during sputtering
Target surface.Therefore, in plasma confinement zone, gas atom is by wanting high with the probability being ionized and electron collision
Much.
Term " plasma confinement zone " used herein be construed as magnet arrangement top region, i.e., with
The adjacent region of the sputtering surface of sputtering target, the region have due to described electron capture and during sputtering it is high from
Daughter density, wherein magnetic vector can be parallel or substantially parallel with target surface (for example, < 30 ° of deviations).Ionization is mainly in magnetic
The place that field vector is parallel to target surface occurs.Here plasma is most intensive, such the result is that target can in the region
It can be by most strong erosion.
In the case where plane sputtering target and in the case where rotatable sputter target, it may be difficult to equably be splashed described in sputtering
It shoots at the target.For example, rotatable target may unevenly or asymmetrically be sputtered in edge or corner region, at the edge or
Plasma density in corner region may due to the edge in magnet curvature and increase.It arranges and provides when magnet
Partially when straight plasma confinement zone curved with part, this effect, which may cause, corrodes the asymmetry of sputtering target.When
Target, even if may still there is enough materials at other, can not also reuse the target when set point is corroded completely.
In addition, extending in the case where rotatable sputter target in the direction of rotation for being parallel to sputtering target of plasma confinement zone
The erosion of the increase to target surface is likely to occur in part.
This disclosure provides the magnet arrangement for magnetron sputtering sedimentary origin, the magnet arrangement can be provided to target
More evenly utilization, allow to extend the service life of sputtering target.
Figure 1A is shown in plan view according to the magnet of implementations described herein arrangement 100.Magnet arranges that 100 include
First magnet 110 and the second magnet 120.First magnet 110 and the second magnet 120 may be arranged in support plate 130, such as in gold
Belong on plate.
In some embodiments, the first magnet 110 and the second magnet 120 can be permanent magnets.First magnet 110 can
To have the South Pole for being directed toward sputtering target, and the second magnet 120 can have the arctic for being directed toward sputtering target, and vice versa.Therefore,
Magnetic field line 111 can extend to the arctic of the second magnet (or first magnet) from the South Pole of the first magnet (or second magnet), with
It confines a plasma in plasma confinement zone 150.
Figure 1B is cross-sectional view of the magnet arrangement 100 of Figure 1A in the first section Cl.Fig. 1 C is the magnet arrangement 100 of Figure 1A
Cross-sectional view in the second section C2.Section C1 influences element 115 with field and intersects, and the field influence element 115 is arranged as and institute
The magnet stated in magnet is adjacent, and section C2 does not influence element with field and intersects.
The magnetic field line 111 extended between the first magnet 110 and the second magnet 120 can be before magnet arrangement, the
Plasma confinement zone 150 is generated in region between one magnet 110 and the second magnet 120.Plasma confinement zone 150
It can be arranged close to the sputtering surface 403 (being represented by dashed line in Figure 1B and Fig. 1 C) of sputtering target.Plasma confinement zone 150
It can be understood as such region, magnetic field line 111 is arranged essentially parallel to the extension of sputtering surface 403, such as Figure 1B in this region
With shown in Fig. 1 C.
It further comprise at least one field comprising magnetisable material according to the magnet of embodiment described herein arrangement 100
Influence element 115.Field, which influences element 115, can be adapted to realize the plasma confinement zone 150 towards described at least one
The local displacement of a influence element 115.
As shown in Figure 1A, one or more fields, which influence element 115, can be arranged near the first magnet 110, so as to respectively
Realize that plasma confinement zone 150 influences element 115 towards field, i.e., towards the local displacement of the first magnet 110.Alternatively or
Additionally, one or more other fields, which influence element, can be arranged near the second magnet, to realize plasma respectively
Restricted area 150 influences element towards other field, i.e., towards the local displacement of the second magnet.
Field, which influences element 115, may include magnetisable material.In other words, field influence element 115 can be by external magnetic field
Magnetization is magnetized by the magnetic field that the first magnet 110 and/or the second magnet 120 generate.Magnetisable material can be used for influencing the first magnetic
The magnetic field of body and/or the second magnet.In some embodiments, influence element 115 in field includes or by strong to external magnetic field
The material of response, especially ferromagnetic material composition.For example, magnetisable material can be with high magnetic permeability (for example, 2 or more
Greatly, material particularly 10 or bigger, more particularly 100 or bigger, or even 300 or bigger magnetic conductivity).
In some embodiments, magnetisable material can be soft magnetic materials, i.e., will not keep when removing external magnetic field
By the material of hard magnetization.For example, magnetisable material can have low coercive force.In this case, it is not forever that field, which influences element,
Magnet, but the first magnet and the second magnet can be usually arranged as permanent magnet.
In some embodiments, magnetisable material may include or be made of at least one of steel and iron.For example, field
Influencing element can be made of soft magnetism mild steel, and the soft magnetism mild steel is such as ST37 steel, ferritic steel, or has low coercive
" soft " (annealing) iron of magnetic force.
Influence element 115 can be arranged in from the first magnet 110 or the second magnet 120 it is close with a distance from, to change
Become the magnetic field generated by magnet arrangement.For example, field influences the minimum range between a magnet in element 115 and the magnet
It can be 10cm or smaller, particularly 1cm or smaller, more particularly 1mm or smaller.More specifically, field influence element 115 can be with
It is arranged to directly contact with the first magnet or the second magnet.
In some embodiments that can be combined with other embodiments described herein, field influences element 115 can be attached
It is connected to the first magnet 110 or the second magnet 120.In embodiment shown in figure 1A, field influences element 115 and is attached to the first magnetic
Body 110.In some embodiments, multiple influence elements can be provided, wherein each influence element can be attached to
One magnet or the second magnet.The magnetic attraction that field influences between element and the first (or second) magnet can be strong enough to be enough field
It influences element and is fixed to the first (or second) magnet.However, in some embodiments, field influences element can fill via fixed
The first (or second) method that is fixed to is set, such as uses adhesive.
When influence element 115 is placed close to the first magnet 110 or directly contacts with the first magnet 110 on the spot, the first magnetic
The magnetic field line of body 110, which will at least partly be inhaled into field, to be influenced in element 115, this provides path for magnetic field line.Therefore, by
The intensity in the magnetic field that one magnet 110 generates will be at least partially before magnet arrangement between the first magnet and the second magnet
Region in weaken.Therefore, element 115 is influenced towards field towards the magnetic field line that the second magnet extends from the first magnet to be bent.Cause
This, field influence element, which is arranged in the first magnet, nearby causes plasma confinement zone towards the first magnet local offset, such as
It is schematically shown in Figure 1A and Figure 1B.
Element is influenced without providing field in section C2 shown in fig. 1 c.Therefore, magnetic field line 111 will not be in the section
Middle the first magnet of direction is bent towards the second magnet.But plasma confinement zone 150 can be positioned substantially between
Centre between first magnet and the second magnet, because the field strength of the first magnet can correspond essentially to second in section C2
The field strength of magnet.Therefore, the rollback point of magnetic field line 111 can be away from the first magnet and the second magnet distance having the same, in institute
It states magnetic field line 111 at rollback point and is parallel to sputtering surface 403.
When influence element is arranged to adjacent with the second magnet 120 on the spot, the magnetic field line of the second magnet 120 will at least partly
Being inhaled into field influences in element, this provides path for magnetic field line.Therefore, the intensity in the magnetic field generated by the second magnet 120 will
At least partially weaken in the region before magnet arrangement between the first magnet and the second magnet.Therefore, from the second magnetic
Body will influence element bending towards the magnetic field line that the first magnet extends towards field.Therefore, field influence element is arranged to and second
Magnet is adjacent can to cause plasma confinement zone towards the second magnet local offset.
By arranging that providing one or more fields influences element 115, can be such that plasma limits to magnet as described above
The certain surface areas of region 150 towards or away from sputtering target locally shifts, such as bending or offset, these certain surface areas
Previously sputtered with non-homogeneous or asymmetric manner.Therefore, elements are influenced by providing one or more fields, it can be with more evenly
Mode carrys out sputtering target.Additionally or alternatively, at least office of plasma confinement zone 150 that there can be elongated shape can be made
Portion element bending is influenced towards one or more fields.Plasma confinement zone with substantial constant curvature will lead to more
Uniform plasma density and target utilization more evenly.Therefore, by being arranged according to implementations described herein to magnet
There is provided one or more fields influences element, can suitably make plasma confinement zone shaping and/or displacement.
When influence element is directly attached or fixed to one of the first magnet and the second magnet on the spot, field influences element can
There is considerable influence to magnetic field.In this case, the magnetic field line of the first magnet or the second magnet can be inhaled into field
It influences in element, so that weakening field influences the magnetic field of element-external and make the magnetic field line between the first magnet and the second magnet
111 deformations.For example, field, which influences element, can serve as magnetic shunt path, the magnetic shunt path is at least partially formed one in the magnet
Direct bridge between two opposing polarities of a magnet.
In some embodiments that can be combined with other embodiments as described herein, at least one field influences element
115 can extend to the South Pole of the first magnet 110 from the arctic of the first magnet 110, or extend to from the arctic of the second magnet 120
The South Pole of two magnets 120.For example, as shown in Figure 1B, field, which influences element 115, can extend to north from the South Pole of the first magnet 110
Pole.In this case, influence element 115 in field serves as the magnetic shunt path of corresponding magnet, to be directly connected to the arctic of the magnet
With the South Pole of the magnet.The magnetic field generated by corresponding magnet can be obviously reduced.It can cause the magnetic field of the first magnet and the
Local asymmetry between the magnetic field of two magnets, and can make plasma confinement zone locally from kicker magnet (its
There is no magnetic shunt path in given section) it is deviated towards weak magnet (it has the magnetic shunt path for being attached to it in given section).
In some embodiments that can be combined with other embodiments described herein, at least one described field influences member
Part 115 can be metal plate, in particular sheet metal, such as soft magnetism low carbon steel plate.Metal plate can hold in specific location
It changes places and is attached to the first magnet or the second magnet.For example, metal plate can be applied to the side surface of the first magnet or the second magnet,
And the first magnet or the second magnet can be locally covered from the South Pole to the arctic.
Field influences element to the thickness for influencing to depend on metal plate in magnetic field.Specifically, it is attached to the thickness gold of magnet
Stronger influence can be had to magnetic field than metal sheet by belonging to plate.It therefore, can be according to the plasma confinement zone to be realized
Local displacement select the thickness of metal plate.In some embodiments, the thickness of metal plate can be 1mm or bigger and
5mm or smaller, in particular 2mm or bigger and 4mm or smaller, more particularly about 3mm.The thickness of metal plate be perpendicular to
It is measured on the plate thickness direction of plate plane.
In some embodiments that can be combined with other embodiments described herein, magnet arrangement may include multiple fields
Influence element.Each influence element can be arranged to adjacent with the first magnet or adjacent with the second magnet.For example, the field shadow
The some influence elements rung in element can be attached to the first magnet, to make plasma confinement zone towards the first magnet
Local offset, and some influence elements that the field influences in element can be attached to the second magnet, to make plasma
Body restricted area the second magnet local offset of direction.
Field influence element is alternately attached to the first magnet and the second magnet by the length direction arranged along magnet,
Plasma confinement zone can be made alternately to deviate towards first magnet and towards the second magnet.It can provide and follow wave
The plasma confinement zone of shape or zigzag path.
One embodiment of the magnet arrangement 200 for influencing element 115 including multiple is illustrated in Fig. 2A, Fig. 2 B and Fig. 2 C
In.
Fig. 2A is arranged with overlooking to show according to the magnet for magnetron sputtering sedimentary origin of embodiment described herein
200.Fig. 2 B shows the magnet arrangement 200 of Fig. 2A with the first cross-sectional view (in section C3), and Fig. 2 C is with the second cross-sectional view
(in section C4) shows the magnet arrangement of Fig. 2A.
Magnet arrangement 200 includes the first magnet 110 and the second magnet 120.First magnet 110 and the second magnet 120 can be set
It sets in support plate 130, such as on a metal plate.The a part of of sputtering target 402 can be arranged in front of magnet arrangement 200.
In some embodiments, sputtering target 402 can be rotatable target, in particular cylindrical target.
The magnetic pole towards sputtering target 402 of first magnet 110 can have the first polarity, and the court of the second magnet 120
It can have and the first opposite polarity second polarity to the magnetic pole of sputtering target 402.For example, 112 He of the South Pole of the first magnet 110
The arctic 123 of second magnet 120 can be towards sputtering target 402, i.e., far from support plate 130 (B referring to fig. 2), vice versa.
In some embodiments, the first magnet 110 can be extends linearly on the length direction L of magnet arrangement 200
Inner magnet and/or the second magnet 120 can be around the first magnet 110, especially along the outer magnet of closed path.It closes
Combining diameter can have rectangular shape.For example, outer magnet can have rectangular shape, and inner magnet can have strip,
The length direction L that the inner magnet is arranged along magnet is in outer magnet internal stretch.
First magnet 110 (it can be set to inner magnet) and the second magnet 120 (it can be set to outer magnet) can be with
It is configured for confining a plasma in closed loop plasma confinement zone 150.Plasma confinement zone 150 can determine
Before magnet arrangement 200, in the region between the first magnet 110 and the second magnet 120, such as the top view of Fig. 2A
It is shown.Wherein, the first section 151 of plasma confinement zone can be by the first longitudinal direction wall between inner magnet and outer magnet
Magnetic field line between 153 generates, and the second section 152 of plasma confinement zone can be by outside inner magnet and rectangle
Magnetic field line between the second longitudinal direction wall 154 of magnet generates.
As shown in the cross-sectional view of Fig. 2 B and Fig. 2 C, a part (being not shown in fig. 2) of sputtering target 402 can be arranged in
Before magnet arrangement 200.Plasma confinement zone 150 can be arranged to adjacent with the sputtering surface 403 of sputtering target 402.
In some embodiments that can be combined with other embodiments described herein, multiple influence elements may include
One or more first influence element 215, one or more of first influence elements 215 are arranged to and the first magnet
The 110 adjacent local displacements with for realizing plasma confinement zone 150 respectively towards the first magnet 110；And/or one or
Multiple second influence elements 225, one or more of second influence element 225 for realizing plasma limitation respectively
Local displacement of the region 150 towards the second magnet 120.
Field, which influences element, can be configured for that plasma confinement zone 150 is made to be respectively facing corresponding field influence element
Part displacement.For example, first influence element can be arranged to it is adjacent with the first magnet, locally to weaken the first field areas
In the first magnet magnetic field, and second influence element can be arranged to it is adjacent with the second magnet, locally to weaken
The magnetic field of the second magnet in the second field areas separated with the first field areas.
First influence element can be configured as magnetic shunt path, and the magnetic shunt path locally connects two tools of the first magnet
There is the point of opposite polarity, and second influence element can be configured as magnetic shunt path, the magnetic shunt path locally connects second
Two of magnet have the point of opposite polarity.
In some embodiments, the first magnet 110 is the interior magnetic extended linearly on the length direction L of magnet arrangement
Body.First influences element 215 and can be attached to one or two longitudinal side surface 211 of inner magnet and towards outer magnet, institute
The inner magnet can be surrounded by stating outer magnet.First influence element 215 can be attached to one of inner magnet with aturegularaintervals
Or two longitudinal side surfaces 211, so that inner magnet is periodically weakened on the length direction L that magnet is arranged.Therefore, wait from
Daughter restricted area 150 can be along the path of the plasma confinement zone 150 around inner magnet periodically towards interior magnetic
Solid offsetting.Plasma confinement zone with undulated path can be provided.
In some embodiments, first influence element is attached to two longitudinal direction sides of the first magnet in corresponding position
Surface, such as towards opposite direction.
In the two adjacent first first distance D1 influenced between element 215 on the length direction L of magnet arrangement
It can be 3cm or bigger and 10cm or smaller, in particular 4cm or bigger and 6cm or smaller, more particularly about 5cm.In addition
Ground or alternatively, first influences length of the element 215 on the length direction that magnet arrange and can be 3cm or more greatly and 10cm
Or smaller, 4cm or bigger and 6cm or smaller, more particularly about 5cm in particular.In some embodiments, two it is adjacent
First influence element between first distance D1 can correspond essentially to first influence element length.It can provide
Follow the plasma confinement zone 150 of the undulated path with substantially constant wavelength.It can more uniformly sputter described
Sputtering target.
In some embodiments that can be combined with other embodiments described herein, the second magnet 120 is outer magnet,
The outer magnet can surround first magnet along the path of substantial rectangular.In this case, the second magnet has two
A longitudinal wall (first longitudinal direction wall 153 and second longitudinal direction wall that inner magnet extension is parallel on the length direction L of magnet arrangement
154)；And two shortwalls extended in the direction of the width.Second influence element 225 can be attached to one of outer magnet or
Two longitudinal side surfaces 221, and towards inner magnet or far from inner magnet.For example, second influence element 225 can be attached to
The outer surface of first longitudinal direction wall 153, and it is attached to the outer surface away from inner magnet of second longitudinal direction wall 154, such as Fig. 2A
It is shown.Alternatively, second influences the inner surface towards inner magnet that element can be attached to first longitudinal direction wall 153, and attached
It is connected to the inner surface towards inner magnet of second longitudinal direction wall 154.
Second is influenced element 225 and can be attached on the length direction that magnet is arranged with aturegularaintervals.Plasma limit
Region 150 processed can be displaced periodically along the path of plasma confinement zone 150 towards outer magnet.It can provide and follow
The plasma confinement zone of undulated path.
In some embodiments, second influences element corresponding position in the length directionl and/or with rule
Interval is attached to two outer (or interior) longitudinal sides 221 of the second magnet.
In the two adjacent second second distance D2 influenced between element 225 on the length direction L of magnet arrangement
It can be 3cm or bigger and 10cm or smaller, in particular 4cm or bigger and 6cm or smaller, more particularly about 5cm.In addition
Ground or alternatively, second influence length of the element 225 on the length direction L that magnet arrange can be 3cm or more greatly and
10cm or smaller, in particular 4cm or bigger and 6cm or smaller, more particularly about 5cm.In some embodiments, two
The second distance D2 that adjacent second influences between element can correspond essentially to the length of second influence element.It can be with
The plasma confinement zone for following the undulated path with substantially constant wavelength is provided.Therefore, it can more uniformly splash
Penetrate the sputtering target.
In some embodiments that can be combined with other embodiments described herein, first influence 215 He of element
Second influences element 225 and can be alternately arranged on the length direction of magnet arrangement.First influence element 215 and second
Field, which influences being alternately arranged for element 225, can cause plasma confinement zone 150 to follow between the first magnet and the second magnet
Between wavy or zigzag path.This is because the first magnet and the second magnet are replaced on the length direction L that magnet is arranged
Ground locally weakens, so that plasma confinement zone is alternately towards the first magnet displacement of the second magnet and direction.
In the embodiment shown in Fig. 2A, the first magnet 110 is inner magnet, and the inner magnet exists in the length directionl
Extend between the first longitudinal direction wall 153 and second longitudinal direction wall 154 of the second magnet of rectangle.First influence element and second influence
Element can alternately be attached to the first longitudinal direction wall 153 and inner magnet of outer magnet, to confine a plasma in wave
In first section 151 of the plasma confinement zone of shape shape.First influence element and second influence element can be handed over
Alternately be attached to the second longitudinal direction wall 154 and inner magnet of outer magnet, so as to confine a plasma in wave shape etc.
In second section 152 of gas ions restricted area.
In some embodiments, first influences the first longitudinal direction wall 153 and second that element can be attached to outer magnet
The first end of longitudinal wall 154, so as to increase plasma confinement zone between the first section 151 and the second section 152 it
Between the first turn-around zone in plasma confinement zone radius of curvature.First influence element can also be attached to outer magnet
First longitudinal direction wall 153 and second longitudinal direction wall 154 the second end, so as to increase plasma confinement zone between the firstth area
The plasma confinement zone radius of curvature in the second turn-around zone between section 151 and the second section 152.Can reduce etc. from
The asymmetric of sputtering target in daughter turn-around zone corrodes.
Can by the length direction L that magnet is arranged in first adjacent influence element 215 and adjacent second
Influence element 225 between appropriately distance is provided, come adjust plasma confinement zone fluctuation extension.In some implementations
First distance D1 in mode, on the length direction L of magnet arrangement between two adjacent first influence elements 215
It can be 3cm or bigger and 10cm or smaller, and between two adjacent second shadow on the length direction L of magnet arrangement
Ringing the second distance D2 between element 225 can be 3cm or bigger and 10cm or smaller.First influence element and second shadow
Ringing element can be arranged respectively with constant interval.In some embodiments, element is influenced between two fields in the longitudinal direction
The distance between can correspond essentially to field on length direction L and influence the length of element.
In some embodiments, first influence element 215 can be attached to the first magnet 110, and second shadow
The second magnet 120 can be attached to by ringing element 225.
In some embodiments, first influence element 215 can be provided as being attached to the gold of the first magnet 110 respectively
Belonging to plate (such as steel plate) and/or second influence element 225 can be provided as being attached to the metal plate of the second magnet 120 respectively
(such as steel plate).
The thickness of first influence element 215 and/or the thickness of second influence element 225 can be 1mm or bigger and/
Or 5mm or smaller.
On the length direction L of magnet arrangement, the length and/or second influence element 225 of first influence element 215
Length can be 10mm or bigger and 100mm or smaller, in particular 30mm or bigger and 70mm or smaller respectively, particularly
Ground is about 50mm.
First influence element 215 and second influence element 225 may include magnetisable material, in particular ferromagnetic material
Material, more particularly soft magnetic material.
In some embodiments, first influence element 215 in the height direction H that magnet is arranged at least partly or
The arctic 113 of the first magnet is fully extended to from the South Pole of the first magnet 112.For example, the height of first influence element 215
The height of the first magnet can be corresponded essentially to.
In some embodiments, second influence element 225 can be in the short transverse that magnet is arranged at least partly
Ground or the arctic 123 that the second magnet is fully extended to from the South Pole of the second magnet 122.For example, second influences element 225
Height can correspond essentially to the height of the second magnet 120.
First influence element 215 can be configured as magnetic shunt path, the magnetic shunt path respectively by the South Pole of the first magnet with
The arctic of first magnet locally connects.Second influence element 225 can be configured as magnetic shunt path, and the magnetic shunt path is respectively by
The South Pole of two magnets is locally connect with the arctic of the second magnet, so that corresponding magnet is locally weakened.
Fig. 3 is shown with overlooking according to the magnet of implementations described herein arrangement 300.Magnet arrangement 300 is basic
It is upper to correspond to the arrangement of magnet shown in Fig. 2A 200, therefore above description can be referred to, details are not described herein.
Magnet arrangement 300 includes the first magnet 110 for being set as inner magnet, length of the inner magnet in magnet arrangement 300
It is extended linearly on degree direction L.Magnet arrangement 300 further comprises the second magnet 120 for being set as outer magnet, the outer magnet edge
Closed path surround inner magnet.Closed path can have circular shape, such as elliptical shape or the rectangle with fillet
Shape.
In the top view of Fig. 3, the plasma limitation extended along closed path is equipped between inner magnet and outer magnet
Region 150.First influence element 215 and second influence element 225 are alternately arranged along plasma confinement zone, so as to
Make plasma confinement zone local offset to inner magnet and outer magnet.First influence element 215 is configured as magnetic shunt path, institute
It states magnetic shunt path and is attached to inner magnet in the length directionl with aturegularaintervals, and second influence element 225 is configured as magnetic point
Road, the magnetic shunt path are attached to outer magnetic along the section without first influence element 215 of arrangement of plasma confinement zone
Body.
Fig. 4 A shows cross-sectional view of the magnetron sputtering sedimentary origin 400 in the first section, and Fig. 4 B shows Fig. 4 A's
Magnetron sputtering sedimentary origin is in the second section.
The magnetron sputtering sedimentary origin 400 includes: rotation target assembly 401, and the rotation target assembly 401 is suitable for around rotation
Axis A rotary sputtering target 402；And at least one magnet arrangement, at least one magnet arrangement are connected to the rotary target group
Part 401 simultaneously is suitable for confining a plasma in the plasma confinement zone 150 adjacent with the sputtering surface 403 of sputtering target 402
In.Magnet arrangement can have some features or all features that above-mentioned magnet arranges any one of 100,200,300, therefore
It can be with reference to being described above, details are not described herein for the explanation.
When sputtering target 402 rotates around the axis of rotation during sputtering, at the same plasma by magnet arrangement be limited in etc. from
In daughter restricted area, when the magnet arrangement does not rotate correspondingly with sputtering target, the more evenly sharp of sputtering target may be implemented
With.At least one magnet arrangement can be arranged in sputtering target 402.Sputtering target can have cylindrical.
As shown in Figure 4 A, plasma confinement zone 150 is located near the sputtering surface 403 of sputtering target 402.Be arranged in away from
Substrate 410 at a certain distance from magnetron sputtering sedimentary origin 400 can be coated with thin layer.
Substrate 410 can pass through magnetron sputtering sedimentary origin 400 (" dynamic coats "), Huo Zheji by continuous moving during coating
Plate 410 can reside substantially at constant position (" static state coating ") during coating.In static sedimentation technique, substrate
410 can remain stationary during coating.It should be noted that if technical staff is it is to be understood that term " static state " depositing operation is not excluded for base
Any movement of plate.For example, static state sputtering may include the fixed substrate during for example depositing according to embodiment as described herein
Substantially constant average substrate position during oscillating substrate position, deposition during position (mobile without any substrate), deposition
Swing substrate position during shake substrate position during setting, depositing, and/or deposition.Therefore, static sedimentation technique can be by
It is interpreted as the depositing operation with the fixation position of substrate, the depositing operation of resting position with substrate, or with substrate
The depositing operation of partial silence position.
Examples described herein can be used for the deposition on large-area substrates, such as lithium battery manufacture or electrochromism
Window.For example, in some embodiments, substrate can have 0.5m2Or bigger surface, 1m in particular2Or bigger surface.
According to some examples, large-area substrates can be GEN 4.5, correspond to about 0.67m2Substrate (0.73 × 0.92m)；GEN
5, correspond to about 1.4m2Substrate (1.1m × 1.3m)；GEN 7.5 corresponds to about 4.29m2Substrate (1.95m ×
2.2m)；GEN 8 corresponds to about 5.3m2Substrate (2.16m × 2.46m)；Or even GEN 10, correspond to about 9.0m2's
Substrate (2.88m × 3.13m).Even greater algebra (such as GEN 11, GEN 12) and/or corresponding can be similarly implemented
Substrate area.
As used herein term " substrate " should specifically cover non-flexible substrate, such as glass plate.In the disclosure
Hold without being limited thereto, and term " substrate " can also cover flexible base board, such as coiled material or foil.
Sputtering can be used in the production of display.In more detail, sputtering can be used for metallizing, such as electrode or bus
It generates.Sputtering is also used for generating thin film transistor (TFT) (TET).Sputtering can also be used for generating ITO (tin indium oxide) layer.Sputtering also can be used
In production thin-film solar cells.Thin-film solar cells includes back contact, absorbed layer and including transparent conducting oxide layer
(TCO).Back contact and tco layer can be generated by sputtering, and absorbed layer can be made with chemical vapor deposition process.
Sputtering target 402 can be made of at least one material selected from the group including following item or comprising selected from including following
At least one material of the group of item: aluminium, silicon, tantalum, molybdenum, niobium, titanium, indium, gallium, zinc, tin, silver and copper.Specifically, target material can be selected from
Group including following item: indium, gallium and zinc.
It should be pointed out that the rotary shaft A of rotation target assembly 401 is typically parallel to the length direction L of magnet arrangement.Rotation
Section of the axis A perpendicular to Fig. 4 A and Fig. 4 B.Magnet arrangement may include the first magnet 110, such as inner magnet；And second magnet
120, such as outer magnet, wherein the first magnet 110 and the second magnet 120 can be towards the coated side of magnetron sputtering depositing device, bases
Plate 410 is arranged at the coated side.
In some embodiments, magnet arrangement can be bent in the section perpendicular to rotary shaft A, and wherein magnet is arranged
Curvature can adapt to the curvature of cylindrical sputtering target 402, as shown in Figure 4 A.For example, inner magnet can be set first
At angle coordinate, and the first longitudinal direction wall 153 of outer magnet and second longitudinal direction wall 154 can be separately positioned on second angle coordinate
At third angle coordinate, the wherein angle between first angle coordinate and second angle coordinate and first angle coordinate and third
Angle between angle coordinate can be respectively 10 ° or bigger.
Magnet arrangement may include multiple influences elements, and the multiple field influence element is attached to the first magnet and/or the
Two magnets are for making plasma confinement zone local displacement.
In the section shown in Fig. 4 A, first influences two longitudinal side surfaces that element 215 is attached to inner magnet, so that
The first section 151 and the second section 152 of plasma confinement zone 150 are towards inner magnet local displacement.
In the section shown in Fig. 4 B, second influences the first longitudinal direction wall 153 and second that element 225 is attached to outer magnet
Longitudinal wall 154, so that the first longitudinal direction wall 153 of the first section 151 of plasma confinement zone towards outer magnet deviates, and
The second longitudinal direction wall 154 of second section 152 of plasma confinement zone towards outer magnet deviates.
First influence element 215 and second influence element 225 can alternately be attached to first in a longitudinal direction
Magnet and the second magnet, to confine a plasma in the plasma confinement zone 150 for following closed loop zigzag path.
Magnet arrangement can be pivoted around rotary shaft A.The pivoting action of magnet arrangement can be independently of sputtering target around rotation
The rotation of axis A.For example, in some embodiments, magnet arrangement can be configured as in first angle position and second angle
Between position " swing ".When moving magnet is arranged during sputtering, layer more evenly can be deposited on substrate 410.
According to some embodiments described herein, can provide multiple respectively with the magnetron sputtering of rotatable sputter target
Sedimentary origin, for coating large-area substrates.In many embodiments, multiple sedimentary origins are arranged to array.Specifically, for
Static large-area substrates deposition can provide linear arrangement or be alternately arranged (such as arranging with arciform setting) along curve
The one-dimensional array of sedimentary origin.In general, the quantity of the sedimentary origin of every coated area is between 2 and 20, more typically between 9 and 16
Between.
In some embodiments, sedimentary origin is equally spaced from one another.Further it is advantageous that the length of sputtering target is omited
It is longer than the length of substrate to be coated.
According to the other side of present disclosure, provide it is a kind of deposited on substrate using magnetron sputtering sedimentary origin it is thin
The method of film.
Fig. 5 is the flow chart for showing the method for the deposition film on substrate according to embodiment described herein.In frame 510
In, generate plasma.In frame 520, confine a plasma in it is adjacent with the sputtering surface 403 of sputtering target 402 it is equal from
In daughter restricted area 150, wherein magnet arrangement 100 includes at least one influence element 115 comprising magnetisable material, institute
Stating at least one influence element 115 realizes the plasma confinement zone 150 towards at least one described influence element
115 local displacement.The generation of plasma and the limitation of plasma can be executed simultaneously or sequentially.
In some embodiments, multiple influence elements are provided, wherein each influence element realizes plasma limit
Region 150 processed influences the local displacement of element towards respective fields.Local displacement as used herein can be understood as being placed close to
The plasma confinement zone part that corresponding field influences element influences the offset of element closer to ground towards corresponding field.
By arranging that being attached to first of the first magnet influences element and be attached to the of the second magnet in an alternating manner
Two influence elements, can provide the plasma confinement zone with closed loop meander-shaped, and can more uniformly utilize
Target surface.
Although foregoing teachings are related to the embodiment of present disclosure, the basic of present disclosure can not departed from
Other and further embodiment of present disclosure are designed in the case where range, and scope of the present disclosure by appended
Claims determine.
Claims (15)
1. a kind of magnet for sputtering sedimentation source arranges (100,200,300), the magnet arrangement includes:
First magnet (110) and the second magnet (120), first magnet (110) and the second magnet (120) are suitable for plasma
Body is limited in plasma confinement zone (150)；With
At least one field comprising magnetisable material influences element (115), at least one described field influences element (115) and is suitable in fact
The existing plasma confinement zone (150) influences the local displacement of element (115) towards at least one described field.
2. magnet arrangement according to claim 1, wherein the magnetisable material is soft magnetic materials, it in particular include iron
With the material of at least one of steel.
3. magnet arrangement according to claim 1 or 2, wherein it is metal plate that at least one described field, which influences element (115),
Steel plate in particular.
4. magnet according to claim 3 arrangement, wherein the metal plate with a thickness of 1mm or bigger and 5mm or smaller,
Particularly wherein the metal plate with a thickness of about 3mm.
5. magnet arrangement according to any one of claim 1 to 4, wherein at least one described field influences element (115)
It is attached to first magnet (110) or second magnet (120).
6. magnet arrangement according to claim 5, wherein at least one described field influences element (115) from first magnetic
The arctic of body (110) extends to the South Pole of first magnet (110), or extends to from the arctic of second magnet (120)
The South Pole of second magnet (120).
7. magnet arrangement according to any one of claim 1 to 6, wherein at least one described field influences element (115)
It is configured as magnetic shunt path, the magnetic shunt path connects two points with opposite polarity of the magnet arrangement.
8. magnet arrangement according to any one of claim 1 to 7, wherein multiple influence elements (115) are provided, it is described
Multiple influence elements include first influence element (215), and first influence element (215) is arranged to and described first
The adjacent office with for realizing the plasma confinement zone (150) towards first magnet (110) respectively of magnet (110)
Portion's displacement；And/or second influence element (225), second influence element (225) for realizing the plasma respectively
Local displacement of the body restricted area (150) towards second magnet (120).
9. magnet arrangement according to claim 8, wherein first magnet (110) is the length in magnet arrangement
The inner magnet extended linearly on direction (L), and wherein second magnet (120) be along closed path, especially along
Rectilinear path surrounds the outer magnet of first magnet (110).
10. magnet arrangement according to claim 9, wherein first influence element (215) is attached to the inner magnet
One or two longitudinal side surface (211) towards the outer magnet, and/or wherein second influence element (225) is attached to
One or two of the outer magnet is towards the inner magnet or away from longitudinal side surface (221) of the inner magnet.
11. the magnet according to any one of claim 8 to 10 arrange, wherein first influence element (215) and
Second influence element (225) is alternately arranged, in order to provide the plasma confinement zone extended along undulated path
(150)。
12. according to claim 1 magnet described in 0 or 11 arrange, wherein the magnet arrangement length direction (L) between
Two adjacent first first distances (D1) influenced between element (215) are 3cm or bigger and 10cm or smaller, and/or
Wherein on the length direction (L) of magnet arrangement between two adjacent second influence element (225)
Second distance (D2) is 3cm or bigger and 10cm or smaller.
13. a kind of magnetron sputtering sedimentary origin (400), the magnetron sputtering sedimentary origin (400) include:
It rotates target assembly (401), the rotation target assembly (401) is adapted for surrounding rotary shaft (A) rotary sputtering target
(402)；With
At least one magnet according to any one of claim 1 to 12 arranges (100,200,300), it is described at least one
Magnet arrangement (100,200,300) be connected to the rotation target assembly (401) and it is adapted be used for confine a plasma in
With the sputtering surface (403) of the sputtering target (402) in adjacent plasma confinement zone (150).
14. magnetron sputtering sedimentary origin according to claim 13, the magnetron sputtering sedimentary origin further comprises by described
The sputtering target (402) that rotation target assembly (401) is rotatably kept, wherein at least one magnet arrangement (100) is arranged in
It can pivot in the sputtering target (402) and around the rotary shaft (A).
15. a kind of existed using the magnetron sputtering sedimentary origin for including magnet according to any one of claim 1 to 12 arrangement
The method of deposition film on substrate, which comprises
Generate plasma；With
The plasma is limited in and the adjacent plasma confinement zone of the sputtering surface (403) of sputtering target (402)
(150) in, wherein the magnet arrangement include comprising magnetisable material at least one influence element (115), it is described at least
One field influences element (115) and realizes that the plasma confinement zone (150) influences element towards at least one described field
(115) local displacement.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2016/074343 WO2018068833A1 (en) | 2016-10-11 | 2016-10-11 | Magnet arrangement for a sputter deposition source and magnetron sputter deposition source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109844900A true CN109844900A (en) | 2019-06-04 |
Family
ID=57124032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680090026.7A Pending CN109844900A (en) | 2016-10-11 | 2016-10-11 | It is arranged for the magnet of sputtering sedimentation source and magnetron sputtering sedimentary origin |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20190055219A (en) |
| CN (1) | CN109844900A (en) |
| WO (1) | WO2018068833A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3721466B1 (en) * | 2017-12-05 | 2023-06-07 | Oerlikon Surface Solutions AG, Pfäffikon | Magnetron sputtering source and coating system arrangement |
| JP2021001382A (en) * | 2019-06-24 | 2021-01-07 | 株式会社アルバック | Cathode unit for magnetron sputtering apparatus |
| CN110885966B (en) * | 2019-11-22 | 2024-08-13 | 维达力实业(深圳)有限公司 | Drum-type magnetron sputtering coating machine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1861836A (en) * | 2005-04-05 | 2006-11-15 | 应用薄膜有限公司 | Magnet assembly for a planar magnetron |
| DE102014110381A1 (en) * | 2014-07-23 | 2016-01-28 | Von Ardenne Gmbh | Magnetron arrangement, coating arrangement and method for adjusting a magnetic field characteristic of a magnetron arrangement |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5364518A (en) * | 1991-05-28 | 1994-11-15 | Leybold Aktiengesellschaft | Magnetron cathode for a rotating target |
| GB0715879D0 (en) * | 2007-08-15 | 2007-09-26 | Gencoa Ltd | Low impedance plasma |
| DE102014110412A1 (en) * | 2014-07-23 | 2016-01-28 | Von Ardenne Gmbh | Magnetron arrangement and coating arrangement |
-
2016
- 2016-10-11 CN CN201680090026.7A patent/CN109844900A/en active Pending
- 2016-10-11 WO PCT/EP2016/074343 patent/WO2018068833A1/en active Application Filing
- 2016-10-11 KR KR1020197012211A patent/KR20190055219A/en not_active Application Discontinuation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1861836A (en) * | 2005-04-05 | 2006-11-15 | 应用薄膜有限公司 | Magnet assembly for a planar magnetron |
| DE102014110381A1 (en) * | 2014-07-23 | 2016-01-28 | Von Ardenne Gmbh | Magnetron arrangement, coating arrangement and method for adjusting a magnetic field characteristic of a magnetron arrangement |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018068833A1 (en) | 2018-04-19 |
| KR20190055219A (en) | 2019-05-22 |
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