DE102014110381A1 - Magnetron arrangement, coating arrangement and method for adjusting a magnetic field characteristic of a magnetron arrangement - Google Patents

Abstract

A magnetron assembly (100) may include: a first magnet assembly (102) having a plurality of magnets and a second magnet assembly (104) having a plurality of magnets that may be disposed at a distance (109d) from each other; a cathode (106) for generating an electric field which can cover at least the distance between the two magnet assemblies (102, 104); wherein the magnets of both magnet assemblies (102, 104) can be magnetized to produce a common magnetic flux penetrating the cathode (106) exiting the magnets of the first magnet assembly (102) and into the magnets the second magnet assembly (104) enters; a magnetizable body (108) comprising ferromagnetic or ferrimagnetic material which may be disposed between the two magnet assemblies (102, 104) such that the magnetic flux penetrating the cathode (106) is attenuated by the magnetizable body (108).

Description

The invention relates to a magnetron arrangement, a coating arrangement and a method for adjusting a magnetic field characteristic of a magnetron arrangement.

In general, workpieces or substrates may be processed or treated, e.g. machined, coated, heated, etched and / or structurally altered. One method of coating a substrate is, for example, sputtering (so-called sputtering or sputter deposition). For sputtering, a plasma-forming gas can be ionized by means of a cathode, wherein a material to be deposited (target material) can be atomized by means of the plasma formed in the process. The sputtered target material can then be brought to a substrate where it can deposit and form a layer. By sputtering, for example, one or more layers can be deposited on a substrate.

Modifications of the cathode sputtering are, for example, sputtering by means of a magnetron, the so-called magnetron sputtering or the so-called reactive magnetron sputtering. In this case, the formation of the plasma can be assisted by means of a magnetic field which can influence the ionization rate of the plasma-forming gas. The magnetic field can be generated by means of a magnet system, wherein by means of the magnetic field a plasma channel can be formed, in which the plasma (a so-called primary plasma) can form. For sputtering, the target material may be or may be disposed between the plasma channel and the magnet system so that the target material can be penetrated by the magnetic field and the plasma channel can form on the target material.

The shape and / or the course of the plasma channel can be influenced by the geometry of the magnet system. For example, the magnet system can be set up such that the plasma channel runs along a closed path. A plasma channel running along a closed path can have two substantially mutually parallel sections, which can be connected at their ends by means of a curved section (the so-called reversal section), i. form a so-called race track. To form a plasma channel in the form of a race track, the magnet system may comprise two elongate magnetic outer poles and an elongated magnetic inner pole disposed between the two outer poles.

The utilization rate of the target material, i. the proportion of target material which can be sputtered before the target material must be changed may depend on the shape and / or the course of the plasma channel, e.g. in the reverse domain. In order to increase the degree of utilization of the target material, for example, a curved section of the plasma channel (in the reverse region) can be extended.

The influencing of the shape and / or the course of the plasma channel take place in a conventional magnetron arrangement on a geometric level. To influence the course of the plasma channel in the reverse region, for example, a geometric taper at the ends of the magnetic inner pole and / or an asymmetrical design of the magnetic inner pole is made. Illustratively, the geometric taper of the magnetic inner pole takes place by means of a geometrical change of the magnets forming the inner pole, e.g. by changing the size and / or variation of the arrangement, position and / or position of the magnets forming the inner pole, i. on a geometric level. For example, the magnets forming the inner pole become smaller and / or narrower towards one end of the inner pole, so that the inner pole is clearly tapered (in other words geometrically tapered).

In order to establish the geometric taper of the magnetic inner pole, magnets are used in a conventional magnetron arrangement which have a shape and / or geometry (for example a smaller and / or trapezoidal cross section) deviating from the remaining magnets of the magnet system. This requires the use of specially shaped magnets which require extra effort in terms of procurement logistics, cost and quality testing in setting up the magnet system. Furthermore, a set up magnetic system is difficult to readjust to react to changing process conditions and / or a changed target material. In order to adapt the plasma channel to changes, it is necessary, for example, to exchange some magnets of the magnet system, so that a magnetic field is generated which generates a matched plasma channel. Therefore, it is necessary to stock a large number of differently shaped magnets for exchanging magnets and / or for accurately setting up a magnet system, which can cause high capital tie up.

For adjusting a magnet system, the magnets of a magnet system are conventionally arranged in the first step on the basis of their magnetic properties within the magnet system (or the first magnet arrangement and the second magnet arrangement). Be clear classified the magnets according to their magnetic properties, selected and mounted to a magnetic image as homogeneous as possible. In order to reduce fluctuations in the magnetic field characteristic of the assembled magnet system occurring in the second step, the jointly generated magnetic field characteristic of the assembled magnet system is analyzed and readjusted the positions (eg their position or orientation in the assembled magnet system) of the magnets in the assembled magnet system based on the analyzed magnetic field characteristic. In this case, conventionally only the interaction of individual magnets with one another is influenced on a geometric level, which limits a precision (or accuracy) with which the magnetic field characteristic can be adapted.

One aspect of various embodiments is clearly based on the fact that in various embodiments influencing the shape and / or the course of the plasma channel or adjusting the magnetic system on a magnetic level instead of on a geometric level can be done. For influencing at the magnetic level, for example, the magnetic field generated by the magnets can be changed, e.g. by changing the course of the magnetic flux by means of a magnetically conductive material. Clearly, a part of the generated magnetic field can be redirected by means of the magnetically conductive material, so that the strength of the magnetic field which penetrates the plasma channel can be changed and influence on the plasma formation can be taken.

According to various embodiments, a magnetron arrangement may be provided with a magnet system wherein the magnet system is easy to adjust (in other words, easy to modify and / or easy to control). Clearly, the magnet system can be so simple or be set up that the need can be omitted to use specially shaped magnets for adjusting the magnet system and / or to make a complex replacement of magnets.

Another aspect of various embodiments can be clearly seen in providing a magnetron arrangement which allows the magnetic field strength to be influenced at any point in the magnet system without having to exchange magnets of the magnet system and / or to change their position. Clearly, at a point at which the cathode (magnetron cathode) penetrating magnetic field is to be influenced, a magnetically conductive material can be arranged.

According to various embodiments, a spatial distribution with which the magnetic field penetrates the cathode can be changed. The spatial distribution with which the magnetic field penetrates the cathode may be e.g. influence the sputtering of the target material and are adjusted so that a nebulization of the target material is clearly as uniform as possible. For example, even sputtering of the target material can increase a degree of utilization of the target material and thus reduce the frequency with which the target material has to be changed, which can save costs.

A magnetron assembly according to various embodiments may include a first magnet assembly having a plurality of magnets (eg, an inner pole) and a second magnet assembly having a plurality of magnets (eg, an outer pole) that may be spaced apart from one another ; a cathode for generating an electric field which can cover at least the distance between the two magnet arrangements; wherein the magnets of both magnet assemblies may be magnetized to produce a common cathode penetrating magnetic flux that may exit the magnets of the first magnet assembly and enter the magnets of the second magnet assembly; a magnetizable body (in other words, a magnetically conductive body) comprising ferromagnetic or ferrimagnetic material, which may be arranged between the two magnet assemblies such that the magnetic flux permeating the cathode may be attenuated by the magnetizable body.

A magnet assembly may, according to various embodiments, designate functionally connected magnets. For example, magnets which have a magnetization in the direction of the cathode can form a magnet arrangement. Similarly, magnets having magnetization in a direction away from the cathode may form a magnet assembly. Furthermore, the magnets of a magnetron arrangement can be arranged in a row and illustratively form a magnet array. The first magnet arrangement and the second magnet arrangement may be part of a common magnet system of a magnetron arrangement.

A magnetron arrangement can be used illustratively to atomize a target material (in other words, to sputter). According to various embodiments, a magnetron arrangement may be formed as tubular magnetron, as planar magnetron, as double planar magnetron and / or as double tubular magnetron. A (double) planar magnetron may have a plate-shaped cathode, on which the target material may be arranged. A (double) tubular magnetron may have a tubular cathode on which the target material may be disposed. Clearly, the cathode and a magnet arrangement can form a magnetron.

For example, a plate-shaped cathode may have a plate-shaped support on which (e.g., brittle and / or fragile) target material may be affixed, or the plate-shaped cathode may comprise a plate-shaped target material (e.g., a plate of target material).

For example, a tubular cathode (a so-called tube cathode) may have a tubular support (a so-called target base tube) on which (e.g., brittle and / or fragile) target material may be secured. Clearly, the target material can surround the target base tube like a jacket. Alternatively, a tubular cathode may comprise a tube-shaped target material (a so-called target tube) (e.g., a tube of target material).

According to various embodiments, an electric field may be provided for sputtering between a cathode (e.g., a planar cathode of a planar magnetron or a tubular cathode of a tubular magnetron) and an anode associated with the cathode. Clearly, a cathode can act as an electrode. For this purpose, the cathode can be supplied with electrical energy (in other words with electrical current), so that a current flow can be formed between the cathode and the anode.

Sputtering of target material (in other words, sputtering) may be done in a vacuum according to various embodiments. For this purpose, the magnetron arrangement can be arranged in a vacuum processing chamber or. For example, a vacuum processing chamber may be coupled to a pump system such that a vacuum and / or vacuum may or may not be provided within the vacuum processing chamber. Further, the vacuum processing chamber may be configured such that the ambient conditions (the process conditions) within the vacuum processing chamber (e.g., pressure, temperature, gas composition, etc.) may be adjusted or regulated during sputtering. The vacuum processing chamber can be, for example, airtight, dustproof and / or vacuum-tight set up or become. For example, the vacuum processing chamber may be supplied with a plasma-forming gas (process gas) or a mixed gas (e.g., a process gas and a reactive gas) via a gas supply. In a reactive magnetron sputtering, the sputtered material may, for example, react with a reactive gas and the reaction product may be deposited.

According to various embodiments, the first magnet arrangement may be elongate. Illustratively, the magnets forming the magnet array of the first magnet arrangement can be arranged one behind the other and form a substantially rectilinear row. The magnets of the first magnet arrangement may, according to various embodiments, form a common inner pole. Clearly, the magnets of the first magnet arrangement can have a common direction of magnetization, so that they can act as a common magnet, wherein the common magnet can form the inner pole.

According to various embodiments, the second magnet arrangement may surround the first magnet arrangement. Clearly, the magnets of the second magnet arrangement can be arranged one behind the other, and form a row running along a closed path (in other words, a self-contained magnet row). The magnets of the second magnet arrangement may, according to various embodiments, form a common outer pole. Clearly, the magnets of the second magnet arrangement can have a common direction of magnetization, so that they can act as a common magnet, wherein the common magnet can form the outer pole.

In other words, the outer pole can be penetrated by a passage opening in which the inner pole is arranged. The outer pole and the inner pole can be magnetized substantially opposite. For example, the outer pole may be magnetized toward the cathode, wherein the inner pole may be magnetized in a direction away from the cathode.

A common direction of magnetization of the magnets of a magnet arrangement may be e.g. have a substantially same magnetization direction. In other words, magnets having a common magnetization direction may be magnetized substantially in the same direction, e.g. with a deviation from the common magnetization direction of less than 30 °, e.g. less than 20 °, e.g. less than 10 °, e.g. less than 5 °.

If a tube magnetron (with a tube cathode) is used, the magnet system (eg the first magnet arrangement and the second magnet arrangement) can be used. Arrangement) be arranged inside the tube cathode or be. The orientation of the magnets of the first magnet arrangement and the second magnet arrangement arranged inside the tube cathode can be adapted to the contour (eg the curvature) of the tube cathode along its circumference. For example, the magnets of the second magnet arrangement can be tilted against one another or so that their magnetization runs essentially perpendicular to the jacket surface of the tube cathode.

If the cathode is curved (for example, tubular), magnets of a magnet arrangement may be magnetized with a common magnetization direction in a direction toward the cathode or in a direction away from the cathode.

In other words, the magnets of a magnet arrangement, for example, can be arranged and aligned such that their magnetization runs in the direction of the axis of rotation of a tube cathode. Illustratively, the magnets of a magnet arrangement can form a curved inner pole or outer pole (along the circumference of the tube cathode).

An elongated magnet assembly (e.g., the first magnet assembly) may have an extent along the length of the magnet assembly (in other words, a length) in a range of about 1 meter to about 6 meters, e.g. in a range of about 2 m to about 5 m.

The magnetizable body can clearly disrupt, suppress or at least reduce a magnetic field penetrating the cathode. For this purpose, a spatial distribution of a magnetic field generated by a magnet system (for example, by the first magnet arrangement and the second magnet arrangement) can be influenced by means of the magnetizable body.

Clearly, the course of magnetic field lines can be changed by means of a magnetizable body. For example, magnetic field lines can preferably pass through the magnetizable body. In this case, magnetic field lines can be guided along the magnetizable body and penetration of magnetic field lines through the magnetizable body can be reduced.

According to various embodiments, the magnetizable body may comprise a magnetizable material (in other words a magnetically conductive material), e.g. have a soft magnetic material. A magnetizable material may be, for example, a metal (such as chromium, nickel, manganese, iron, and / or cobalt), a ceramic (eg, ferrite), a nickel-iron alloy (eg, so-called permalloy or supermalloy), a silicon-iron alloy , a cobalt-iron alloy, a nickel-iron-cobalt alloy (eg, so-called mumetal), an iron-aluminum alloy (or an iron-aluminum-silicon alloy), a steel alloy (such as tungsten steel, Electrical steel, cast steel, silicon steel and / or magnetizable stainless steel) and / or a metallic glass.

A magnetizable material may comprise a ferromagnetic material, e.g. a soft magnetic material, or a ferrimagnetic material.

In general, a magnetizable material can be generated by means of an external magnetic field, e.g. be magnetized by means of acting on the magnetizable magnetic field strength (excitation field strength), wherein a magnetization of the magnetizable material is greater, the greater the excitation field strength. In other words, the magnetic flux density permeating the magnetizable material is influenced by the external magnetic field. For example, a magnetizable material may be magnetized to a saturation magnetization (in other words, the magnetizable material is then penetrated by a saturation magnetic flux density), which magnetically material is magnetically saturated upon reaching the saturation magnetization.

In other words, increasing the excitation field strength substantially does not increase the magnetization of the magnetizable material any more when the magnetizable material is magnetically saturated. The saturation flux density describes the material permeating magnetic flux density at which the magnetic saturation begins. The saturation flux density at which the magnetic saturation of a magnetizable material may be more than about 0.2 T, e.g. greater than about 0.5 T, e.g. greater than about 1 T, e.g. of more than about 1.5T.

The strength with which a magnetizable material is magnetized by an external magnetic field can be described by means of the relative permeability (in other words, the magnetic conductivity). Clearly, a magnetizable material can be magnetized more strongly by the exciting field strength (in other words have a higher magnetization), the greater the relative permeability.

In general, the relative permeability of a magnetizable material may depend on various factors, eg, temperature, from the magnetization, eg a previous magnetization, the magnetizable material and the exciter field strength.

When a magnetizable material magnetizes for the first time (new curve) (or more generally: the magnetizable material does not magnetize before magnetization), the relative permeability may increase with increasing excitation field strength and assume a maximum (the maximum permeability), the relative permeability increasing larger excitation field strengths (eg greater than 100 A / m, eg greater than 300 A / m) can decrease again, ie the magnetizable material may transition to the magnetically saturated state. The relative permeability can be determined by the derivation of the recurve at room temperature, i. be defined by the derivation of the magnetization of the magnetizable material after the exciter field strength, the maximum permeability corresponds to the maximum of the derivative of the new curve.

A magnetizable material may have a relative permeability, e.g. a maximum permeability, greater than about 100, e.g. greater than about 1000, e.g. greater than about 10,000, e.g. greater than about 100,000.

A magnetizable material may also have residual magnetization (in other words, remanence flux density or so-called remanence) if previously magnetized. For example, the remanence flux density can be defined by the flux density which a magnetizable material retains after removal of an external magnetic field when the magnetizable material has been brought into a magnetically saturated state by means of the external magnetic field. A magnetizable material, e.g. For example, a soft magnetic material may have a remanence flux density that is less than the saturation flux density.

If a magnetizable material is soft magnetic, it can be easily magnetized in a magnetic field. For example, a soft magnetic material may be magnetized and / or re-magnetized (in other words, the direction of its magnetization changed) by means of the magnetic field generated by a magnet of a magnet arrangement. Unlike a soft magnetic material, a magnet of a magnet assembly under the action of another magnet of the magnet assembly can maintain its magnetization (in other words, the direction of its magnetization) (and have a so-called hard magnetic material). For example, a soft magnetic material may have a remanence flux density that is significantly less than the saturation flux density, e.g. less than about 50% of the saturation flux density, e.g. less than about 20% of the saturation flux density, e.g. less than about 10% of the saturation flux density.

According to various embodiments, the magnetizable body may comprise ferromagnetic material or consist of ferromagnetic material, e.g. made of soft magnetic material. For example, the magnetizable body may be formed as a ferromagnetic body or soft magnetic body.

Analogously, the magnetizable body may comprise ferrimagnetic material or be formed as a ferrimagnetic body.

According to various embodiments, the magnetizable body may be plate-shaped. A plate-shaped body may illustratively have a thickness (in the thickness direction) which is significantly smaller than an extent (e.g., any extension) of the plate-shaped body in a direction across the thickness (transverse to the thickness direction).

Generally, the magnetizable body may be in the form of a polygonal base prism, e.g. with triangular, quadrangular, pentagonal, hexagonal, etc. base. According to various embodiments, the magnetizable body may be wedge-shaped, i. have the shape of a prism with triangular base. According to various embodiments, the magnetizable body may be bounded by a curved outer surface.

According to various embodiments, the magnetizable body may be configured such that a portion of the magnetic flux exiting the first magnet assembly and / or the second magnet assembly penetrates the magnetizable body. Clearly, part of the magnetic flux can be passed through the magnetizable body.

A magnetron assembly according to various embodiments may include a support structure for supporting the first magnet assembly and / or the second magnet assembly. The support structure may, for example, be plate-shaped, e.g. planar or curved. In order to carry the first magnet arrangement and / or the second magnet arrangement, these can be fastened to the carrier structure.

If a planar magnetron is used for sputtering, the support structure may have a planar surface on which the first magnet arrangement and / or the second magnet arrangement can be attached. If a tubular magnetron is used for sputtering, the support structure may be curved Have surface on which the first magnet assembly and / or the second magnet arrangement can be attached. A support structure with a curved surface can clearly make it possible to arrange the magnets of the magnet arrangements as close as possible to the cathode and / or the alignment of the arranged inside the tube cathode magnet assemblies to the contour (eg the curvature) of the tube cathode along the circumference adapt.

In order to fix the first magnet arrangement and / or the second magnet arrangement to the support structure, the support structure may for example be a connection element (eg a clamp, a screw, or a thread), in other words a device for mechanically fixing one of the magnets -Anordnung, exhibit. Further, the support structure may include a recess (e.g., a groove) in which the magnets of a magnet assembly may be arranged to form a magnet array. Illustratively, the recess may define position (e.g., a position and / or orientation) of a magnet disposed in the recess.

In order to fix the first magnet arrangement and / or the second magnet arrangement to the carrier structure, the carrier structure may, for example, comprise a magnetizable material, whereby a force is imparted between the magnet arrangement and the carrier structure by means of the magnetic field generated by a magnet arrangement can be so that the magnets of the magnet assembly press with a force against the support structure. The greater the force with which the magnets of the magnet arrangement press against the support structure, the better they can be clearly fastened to the support structure.

According to various embodiments, the magnetizable body may be part of the support structure.

Clearly, the support structure may have a projection which extends between the first magnet arrangement and the second magnet arrangement. If the carrier structure has a projection, the magnetizable body can be formed by the projection. Furthermore, the support structure and / or the projection of the support structure may comprise a soft magnetic material.

Alternatively, the support structure may be nonmagnetic, for example comprising a non-magnetic material, e.g. Aluminum, non-magnetic steel and / or a plastic. As a result, it can be achieved, for example, that the carrier structure can have no influence on the magnetic field characteristic, so that the effect of a magnetizable body arranged between the first magnet arrangement and the second magnet arrangement can be greater if the carrier structure is nonmagnetic.

According to various embodiments, the cathode may be tubular. Alternatively, according to various embodiments, the cathode may be plate-shaped, e.g. planar, be formed.

A magnetron arrangement may, according to various embodiments, comprise a further magnetizable body, which may be arranged on a side of the first magnet arrangement opposite the magnetizable body. Clearly, the first magnet arrangement can extend between the magnetizable body and the further magnetizable body. The further magnetizable body may be arranged analogously to the magnetizable body.

A coating arrangement according to various embodiments may include: a vacuum processing chamber for providing a plasma forming gas within a plasma region of the vacuum processing chamber, and a magnetron assembly according to various embodiments for forming a plasma in the plasma region from the plasma forming gas. Clearly, in the plasma region the plasma channel can run, wherein a plasma can be formed in the plasma channel.

In general, the target material can be sputtered with a spatial distribution. The spatial distribution with which the target material can be atomized can be influenced, for example, by the shape and the course of the plasma channel. Depending on the spatial distribution with which the target material is atomized, the target material can be removed (in other words used up). Due to the erosion of target material, for example, an erosion trench running along the plasma channel may form in the target material. If the target material is eroded non-uniformly (e.g., unevenly fast), the erosion trench may be deeper and / or wider in areas where more target material is being ablated than in areas where less target material is being ablated.

To uniformly consume target material, the target material may be moved relative to a magnetic field of the magnetron array so that the plasma channel can be moved relative to the target material. When the plasma channel is moved relative to the target material, a larger area of the target material may be a source of sputtering than if the plasma channel remains stationary relative to the target material. The larger a region of the target material is, the source of atomization is, the greater, for example, a utilization of the target material (target utilization), in other words, the greater the proportion of the target material can be, which can be atomized before the target material must be changed.

If a tubular magnetron (with a tubular cathode) is used, the tubular cathode can be or can be rotatably mounted, for example. A rotatably mounted tube cathode can make it possible to rotate the tube cathode and thus the target material around the magnet system arranged in the interior of the tube cathode. If the target material is rotated around the magnet system, a large part of the target material can thereby be removed in layers, wherein an erosion profile can result along the axis of rotation about which the target material is rotated. The erosion profile can be understood as a projection of an erosion trench in the direction of rotation of the target material, which can be formed due to the rotation of the target material.

The shape of the erosion profile can be influenced by the spatial distribution with which the target material is atomized, in other words by the erosion behavior. The erosion behavior can influence the degree of utilization of the target material in tube targets. Illustratively, the degree of utilization of the target material can be greater, the more uniform the erosion behavior is.

If the plasma channel has a curved course in the two reverse regions of the plasma channel, the degree of utilization of the target material can be influenced by the erosion behavior at the two reverse regions of the plasma channel, i. at the end portions of the tube cathode and / or the target material (in other words at the target ends). For example, the removal of the target material in the reverse regions, where the plasma channel is parallel to the circumference of the tube cathode, add up, and lead to a greater material consumption, as in the areas in which the plasma channel runs axially to the tube cathode. Clearly, more target material can be removed at the two end sections of the tube cathode than between the reverse sections of the plasma channel.

The regions of greater erosion at the ends of the tube target may have a small extension (in other words be narrowly defined) so that a trench running along the circumference of the target material may form in the target material. When the depth of the trench in the target material reaches the thickness of the target material, the target material must be changed.

According to various embodiments, a magnetic short circuit (shunt) can be achieved by means of the magnetizable body, which changes the course of the magnetic field in such a way that the erosion behavior at the reversal regions of the plasma channel is equalized and clearly an even erosion behavior can be achieved.

For example, by means of suitable magnetizable bodies, which may or may not be disposed on either side of the magnetic inner pole, asymmetric shaping of the plasma channel in one of the reversal regions may be achieved by forming (e.g., forming) the magnetizable bodies on both sides of the inner pole.

A support structure for supporting the first magnet arrangement may have a round, rectangular or triangular cross-section. For example, a support structure having a rectangular cross section may be elongate. A support structure may have a diameter and / or an extent along the longitudinal extent of the support structure (in other words, a length) in a range of about 1 m to about 6 m, e.g. in a range of about 2 m to about 5 m. A support structure may have an extent transverse to the longitudinal extent of the support structure (in other words, a width) in a range of about 5 cm to about 2 m, e.g. in a range of about 10 cm to about 1 m.

Similarly, a plate-shaped cathode may have a round, rectangular or triangular cross-section and e.g. be extended. A planar cathode may have a length and / or an extent along the length of the support structure and / or along the longitudinal extent of the planar cathode in a range of about 1 m to about 6 m, e.g. in a range of about 2 m to about 5 m. A planar cathode may have a width and / or an extension across the longitudinal extent of the planar cathode in a range of about 5 cm to about 2 m, e.g. in a range of about 5 cm to about 50 cm.

For example, a plate-shaped cathode of a wide magnetron may have a width in a range of about 20 cm to about 30 cm. For example, a broad magnetron can be set up in such a way that as much target material as possible can be atomized, the greater the width of the magnetron, the greater the amount of sputtered target material can be.

A plate-shaped cathode of a narrow magnetron may have a width in a range of about 5 cm to about 15 cm. For example, a narrow magnetron can be set up in such a way that as many magnetrons as possible fit next to one another in a vacuum processing chamber, for example in a predefined installation space.

A tubular cathode may have an extension along the longitudinal extent of the tubular cathode (e.g., along the axis of rotation of the tubular cathode), in other words a length, in a range of about 1 meter to about 6 meters, e.g. in a range of about 2 m to about 5 m. Further, a tubular cathode may have a diameter (in other words, an extension transverse to the longitudinal extent of the tubular cathode) in a range of about 5 cm to about 50 cm, e.g. in a range of about 10 cm to about 30 cm.

A magnetizable body may have an expansion (in other words, a material thickness and / or a material thickness) in a range of about 0.001 mm to about 20 mm, e.g. in a range of about 0.1 mm to about 10 mm. If the magnetizable body is plate-shaped, it may have a thickness in a range of about 0.5 mm to about 5 mm, e.g. in a range of about 1 mm to about 2 mm.

As described above, the magnets of a magnet system are conventionally arranged in the first step by their magnetic properties within the magnet system (or the first magnet arrangement and the second magnet arrangement). Illustratively, the magnets are classified according to their magnetic properties, selected and assembled to a magnetic image as homogeneous as possible. In order to reduce fluctuations in the magnetic field characteristic of the mounted magnet system, the jointly generated magnetic field characteristic of the assembled magnet system is analyzed and the positions (for example, their position or orientation in the mounted magnet system) of the magnets in the assembled magnet system are readjusted on the basis of the analyzed magnetic field characteristic. In this case, conventionally only the interaction of individual magnets with one another is influenced on a geometric level, which limits a precision (or accuracy) with which the magnetic field characteristic can be adapted.

In comparison, the precision with which the magnetic field characteristic can be adjusted according to various embodiments may be greater since the magnetic field characteristic is adjusted magnetically. For example, the magnetic field penetrating the cathode may, in principle, be arbitrarily fine tuned and / or adapted, e.g. by adjusting the geometry (shape and size, e.g., material thickness) of the magnetizable body to the strength with which the magnetic field is to be attenuated.

Uniform sputtering of target material may require precisely influencing (e.g., low attenuation) a magnetic field penetrating the cathode to vividly obtain the most uniform spatial distribution (e.g., magnetic flux density or magnetic field gradient) of the magnetic field on the surface of the target material. Clearly, the magnetic field characteristic can be adjusted as precisely as possible. For example, to precisely influence the magnetic field, the magnetizable body may have a small material thickness, and e.g. be furnished by means of a magnetizable foil or by means of a magnetizable sheet. For example, in order to enable precise influencing, the magnetizable body may have a smallest dimension of less than about 2 mm, e.g. less than about 1 mm.

Furthermore, variations in the magnetic field characteristic of the mounted magnet system according to various embodiments may be reduced (e.g., analogously and / or as a substitute for readjustment of a conventional magnet system in the second step), in which comparison with conventional readjustment e.g. a stronger attenuation of the cathode penetrating magnetic field can be achieved. In other words, the magnet system can be adjusted efficiently. Clearly, the magnetic field penetrating the cathode can be attenuated all the more, the greater the material thickness of the magnetizable body. To enable a strong weakening, the magnetizable body may be solid, e.g. a smallest dimension greater than about 2 mm, e.g. greater than about 5 mm.

Furthermore, the course of the plasma channel of a mounted magnet system or a precisely configured magnet system can be varied according to various embodiments, without having to change the positions of the magnets of the assembled magnet system or the geometry of the magnets of the assembled magnet system. In this case, the changes can be reversible, which can be dispensed with a renewed costly adjustment of the magnet system, if the change is to be reversed.

For this purpose, at the points where the magnetic field which penetrates the cathode, is to be attenuated, be arranged a magnetizable body or. This can be achieved, for example, that a mounted magnet system can be variably adapted to changing process conditions (eg a changed target material or in the course of a process). For example, multiple configurations (eg, at which position a magnetizable body is located) can be reproduced easily, reversibly, and inexpensively.

According to various embodiments, a plurality of magnetizable bodies can be used to enable the most precise possible adaptation of the magnet system. For example, in each case a magnetizable body can be arranged at several locations in the magnet system. For example, a plurality of magnetizable bodies may be arranged to be sequentially disposed in the magnet system so that their effect on the magnetic field characteristic may be increased stepwise (e.g., to adjust a magnetic field characteristic in the course of a process).

A magnetizable body may be elongate (e.g., perpendicular to the thickness of a plate-shaped magnetizable body) and have an extent along the length of the magnetizable body (in other words, a length) in a range of about 10 mm to about 500 mm, e.g. in a range of about 100 mm to about 200 mm.

A plate-shaped magnetizable body may have an extension perpendicular to the thickness and perpendicular to the length (in other words, a width) in a range of about 1 mm to about 50 mm, e.g. in a range of about 2 mm to about 10 mm.

A method of adjusting a magnetic field characteristic of a magnetron device may include generating a magnetic field having a magnetic field using a first magnet array having a plurality of magnets and a second magnet array having a plurality of magnets, wherein the first magnet array and the second magnet array Magnet arrangement can be arranged at a distance to each other. Furthermore, the method may comprise determining data representing the magnetic field characteristic. Further, the method may include disposing a magnetizable body between the first magnet assembly and the second magnet assembly to vary the magnetic field characteristic.

A magnetic field characteristic may be, for example, a spatial distribution of a magnetic flux density, a magnetic flux and / or a magnetic field strength, e.g. have a direction of a spatially distributed magnetic flux density or a direction of magnetic field lines. Clearly, a magnetic field characteristic may have a spatial distribution of a magnetic field strength.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

1A to 1D in each case a magnetron arrangement according to various embodiments in a schematic perspective view;

2A to 2C each a magnetron arrangement according to various embodiments in a schematic plan view;

3A to 3D each a magnetizable body according to various embodiments in a schematic cross-sectional view or side view;

4A a magnetron arrangement according to various embodiments in a schematic cross-sectional view or top view;

4B a magnetron arrangement according to various embodiments in a schematic cross-sectional view;

4C a spatial distribution of the magnetic field according to various embodiments in a schematic diagram;

5A to 5C in each case a magnetron arrangement according to various embodiments in a schematic cross-sectional view;

6A a magnetron arrangement according to various embodiments in a schematic cross-sectional view or top view;

6B a magnetron arrangement according to various embodiments in a schematic cross-sectional view or side view;

6C a magnetron arrangement according to various embodiments in a schematic cross-sectional view or top view;

6D a magnetron arrangement according to various embodiments in a schematic perspective view;

7 a coating arrangement according to various embodiments in a schematic cross-sectional view; and

8th a method according to various embodiments in a schematic view.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments can be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

1A illustrates a magnetron arrangement 100 according to various embodiments in a schematic perspective view. The magnetron arrangement 100 can be a first magnet arrangement 102 with several magnets 102 . 102b and a second magnet arrangement 104 with several magnets 104a . 104b exhibit. The magnets 102 . 102b the first magnet arrangement 102 can at a distance 109d to the magnets 104a . 104b the second magnet arrangement 104 be arranged.

The distance 109d the magnets 102 . 102b the first magnet arrangement 102 to the magnets 104a . 104b the second magnet arrangement 104 may be in a range of about 0.5 cm to about 50 cm, eg in a range of about 1 cm to about 10 cm.

Furthermore, the magnetron arrangement 100 a cathode 106 for generating an electric field. According to various embodiments, an electric field may be applied between the cathode for sputtering 106 (eg a planar cathode 106 a planar magnetron or a tubular cathode 106 a tubular magnetron) and one of the cathodes 106 be provided associated anode, wherein the anode may be part of a magnetron arrangement. Illustratively, a cathode 106 act as an electrode.

To provide an electric field may be to the cathode 106 an electrical potential can be applied, the cathode 106 can be supplied with electrical energy (in other words with electric current), so that between the cathode 106 and the anode, a current flow can be formed. This can be the cathode 106 an electrically conductive material, for example a metal, for example aluminum or steel. To supply the cathode 106 with electrical energy can the cathode 106 be coupled to a power supply and / or a power supply.

The cathode 106 According to various embodiments, it may be arranged such that it is the distance between the first magnet arrangement 102 and the second magnet arrangement 104 covers.

The magnets 102 . 102b the first magnet arrangement 102 and the magnets 104a . 104b the second magnet arrangement 104 may have a common magnetic flux pervading the cathode 111 (first magnetic flux 111 ) generate from the magnets 102 . 102b the first magnet arrangement 102 exit and into the magnets 104a . 104b the second magnet arrangement 104 entry. Illustratively, the magnetic flux lines of the first magnetic flux 111 a bow 111 describe which starting from the cathode 106 may be extended into the plasma region.

Furthermore, the magnetron arrangement 100 a magnetizable body 108 exhibit. The magnetizable body 108 can be between the magnets 102 . 102b the first magnet arrangement 102 and the magnet 104a . 104b the second magnet arrangement 104 be arranged.

The magnetizable body 108 may be arranged such that a part of the magnet 102 . 102b the first magnet arrangement 102 and the magnet 104a . 104b the second magnet arrangement 104 generated magnetic flux 113 (second magnetic flux 113 ) the magnetizable body 108 penetrates.

According to various embodiments, the second magnetic flux 113 a part of one of a first magnet 102 be generated magnetic flux. The first magnet 102 may be part of the first magnet arrangement 102 be. The magnetizable body 108 may be arranged and aligned such that the second magnetic flux 113 from the first magnet 102 emerge, the magnetizable body 108 penetrate and return to the first magnet 102 can occur. Illustratively, the first magnet 102 be or be shorted magnetically. Shall have multiple magnets 102 . 102b can be magnetically shorted or be, the magnetizable body 108 be correspondingly larger or become.

Illustratively, the second magnetic flux 113 analogous to the first magnetic flux 111 penetrate the cathode when the magnetizable body 108 not between the two magnet arrangements 102 . 104 is arranged. Is the magnetizable body 108 between the two magnet arrangements 102 . 104 arranged, it may be arranged and aligned such that the second magnetic flux 113 the cathode does not penetrate. Illustratively, the magnetic flux penetrating the cathode around the second magnetic flux 113 reduced (in other words by means of the magnetizable body 108 toned down).

1B illustrates a magnetron arrangement 100 according to various embodiments in a schematic perspective view, wherein the magnetizable body 108 is arranged and aligned such that a part of the first magnet 102 exiting magnetic flux 113 the magnetizable body 108 penetrates and into a second magnet 104a entry. The second magnet 104a can be part of the second magnet arrangement 104 be. Illustratively, the first magnet 102 with the second magnet 102 be or be shorted magnetically. Shall have multiple magnets 102 . 102b the first magnet arrangement 102 with several magnets 104a . 104b the second magnet arrangement 104 can be magnetically shorted or be, the magnetizable body 108 be correspondingly larger or become.

1C illustrates a magnetron arrangement 100 according to various embodiments in a schematic perspective view, wherein the magnetron arrangement 100 another magnetizable body 118 can have. The two magnetizable bodies 108 . 118 can vividly juxtaposed between the first magnet 102 and the second magnet 102b be arranged. In other words, the other magnetizable body 118 between the magnetizable body 108 and the second magnet arrangement 104 (eg the second magnet 104a ) can be arranged. The other magnetizable body 118 can be analogous to the first magnetizable body 108 be furnished.

The other magnetizable body 118 may be arranged and aligned such that a third magnetic flux 115 from the second magnet 104a emerge, the other magnetizable body 118 penetrate and again into the second magnet 104a can occur. Illustratively, the second magnet 102 be or be shorted magnetically. According to various embodiments, the third magnetic flux 115 a part of one of a second magnet 104a be generated magnetic flux.

Illustratively, the magnetic flux penetrating the cathode around the second magnetic flux 113 and the third magnetic flux 115 reduced (in other words by means of the magnetizable body 108 . 118 toned down).

1D illustrates a magnetron arrangement 100 according to various embodiments in a schematic perspective view, wherein the magnets 102 . 102b the first magnet arrangement 102 between the magnets 104a . 104b the second magnet arrangement 104 are arranged.

The magnetizable body 108 can be analogous to those described above 1B to 1C be arranged.

2A illustrates a magnetron arrangement 100 According to various embodiments in a schematic plan view (eg from one direction 105 ) or a schematic cross-sectional view (eg in a sectional plane perpendicular to the direction 105 For example, see 1A to 1D ).

The first magnet arrangement 102 and the second magnet arrangement 104 may each have more than two magnets, for example three, four, five, six, more than six, eg more than 10, eg more than 100, eg more than 1000. The first magnet arrangement 102 and the second magnet arrangement 104 may be elongated (toward 101 ), eg perpendicular to the distance 109d ,

The magnetizable body 108 and the other magnetizable body 118 may according to various embodiments with respect to the longitudinal extent of the first magnet arrangement 102 (eg concerning the direction 101 ) can be arranged one behind the other. Illustratively, two magnetizable bodies 108 . 118 in the first magnet arrangement 102 and the second magnet arrangement 104 be formed gap formed.

Furthermore, the two magnetizable bodies 108 . 118 be arranged such that each magnetizable body 108 . 118 can each affect the magnetic flux, which can emerge from more than one magnet (eg two, three, four or more than four magnets). These can be the two magnetizable body 108 . 118 for example, analogous to those in 1A or 1B be aligned embodiments illustrated. For example, the two magnetizable bodies 108 . 118 together three magnets of the first magnet arrangement 102 with three magnets of the second magnet arrangement 104 short-circuit magnetically (compare for example 1B ). Alternatively, the two magnetizable bodies 108 . 118 together three magnets of the first magnet arrangement 102 short-circuit magnetically and in each case three magnets of the second magnet arrangement 104 short-circuit magnetically (compare for example 1A ).

The location (eg the position and / or the orientation), in which the two magnetizable body 108 . 118 may be or will depend on how strong and / or in which area a weakening of the cathode penetrating magnetic field is to take place in order to influence a spatial distribution with which the target material is atomized (in other words the erosion behavior). For example, the attenuation of the magnetic field penetrating the cathode can be stronger, the smaller the distance of the two magnetizable body 108 to each other.

2 B illustrates a magnetron arrangement according to various embodiments in a schematic plan view (eg from one direction 105 ) or a schematic cross-sectional view (eg in a sectional plane perpendicular to the direction 105 For example, see 1A to 1D ).

According to various embodiments, a plurality of magnetizable bodies may touch each other, in other words as a common magnetizable body 108 Act. Alternatively, the magnetizable body 108 be configured in one piece and along the longitudinal extent of the first magnet arrangement 102 be extended.

The extension along the longitudinal extension of the magnetizable body 108 (in other words, the length), with which the magnetizable body 108 may be dependent on how strong and / or in which area a weakening of the cathode penetrating magnetic field is to take place in order to influence a spatial distribution with which the target material is atomized (in other words the erosion behavior). For example, the attenuation of the magnetic field penetrating the cathode can be stronger, the greater an expansion (eg along the longitudinal extension) of the magnetizable body 108 is set up.

The magnetizable body 108 can be analogous to 1A or 1B be aligned and analogous to the previous description, several magnets of the first magnetic arrangement 102 and the second magnet arrangement 104 short-circuit each other.

2C illustrates a magnetron arrangement according to various embodiments in a schematic plan view (eg from one direction 105 ) or a schematic cross-sectional view (eg in a sectional plane perpendicular to the direction 105 For example, see 1A to 1D ).

According to various embodiments, the magnetizable body 108 and the other magnetizable body 118 different sizes, eg a different extent along the longitudinal extent of the first magnet arrangement 102 (along the direction 101 ), exhibit. Analog can the magnetizable body 108 and the other magnetizable body 118 a different extent transverse to the longitudinal extent of the first magnet arrangement 102 (eg along the direction 105 , or across to the direction 105 and the direction 101 spanned level).

The location (eg the position and / or the orientation), in which the two magnetizable body 108 . 118 are arranged, and / or an extent, with which each magnetizable body 108 . 118 is formed, may depend on how strong and / or in which area a weakening of the cathode penetrating magnetic field should take place. For example, the attenuation of the magnetic field penetrating the cathode can be greater, the greater an extension of the further magnetizable body 118 is. Furthermore, the two magnetizable body 108 . 118 be set up so that their effect on the magnetic field penetrating the cathode and / or in the vicinity of the magnetizable body 108 . 118 can superpose arranged magnets.

3A to 3D each illustrate a magnetizable body 108 according to various embodiments in a schematic cross-sectional view or side view. According to According to various embodiments, the magnetizable body 108 have an angular, for example, a rectangular, cross-section, as in 3A is illustrated. A magnetizable body 108 with a rectangular cross section, for example, be configured cuboid.

According to various embodiments, the magnetizable body 108 of two parallel surfaces 302 be limited, with the two surfaces 302 For example, the bases of a prism can form, for example, a prism with a polygonal base.

According to various embodiments, the magnetizable body 108 have an angular, for example, a triangular, cross-section, as in 3B is illustrated. A magnetizable body 108 with a triangular cross-section, for example, tetrahedral or, for example, wedge-shaped.

Illustratively, the magnetizable body 108 be set up such that a material thickness along an extension (eg a longitudinal extent) of the magnetizable body 108 can increase.

The in 3A illustrated cross-section, according to various embodiments, for example, transversely to the in 3B illustrated cross-section, when the magnetizable body 308 for example, wedge-shaped.

According to various embodiments, the magnetizable body 108 from a curved surface 308 limited and / or a curved edge 308 have, as in 3C is illustrated. Analogous to the preceding description, the in 3C illustrated cross-section transverse to one of in 3A and or 3B illustrated cross sections run.

According to various embodiments, the magnetizable body 108 from an angled surface 310 limited and / or an angled edge 310 have, as in 3D is illustrated. Illustratively, the magnetizable body 108 be angled. Analogous to the preceding description, the in 3D illustrated cross-section transverse to one of in 3A . 3B and or 3C illustrated cross sections run.

4A illustrates a magnetron arrangement 100 in a schematic cross-sectional view or top view. According to various embodiments, the second magnet arrangement 104 as a self-contained magnetic series 104 be educated. Illustratively, a self-contained magnetic series 104 extending along a closed path. The self-contained magnetic series 104 may be formed for example in the form of an oval, an ellipse or in the form of a rectangle with rounded corners.

Inside of the closed magnetic series 104 enclosed area may be the first magnet arrangement 102 be arranged. According to various embodiments, the first magnet arrangement 102 as an elongated magnetic series 102 be formed (eg in the direction 103 extends longitudinally).

The first magnet arrangement 102 can be so in the of the closed magnetic series 104 enclosed area be arranged that the magnets of the first magnet arrangement 102 and the magnets of the second magnet arrangement 104 at a distance 109d are arranged to each other.

The magnets of the second magnet arrangement 104 can magnetize with a directional component in the direction 105 have, wherein the magnets of the first magnetic arrangement 102 a magnetization with a direction component in the opposite direction 105 can have. In other words, the magnetization of the magnets of the second magnet arrangement 104 have a directional component, which counter to the magnetization of the magnets of the first magnetic arrangement 102 runs.

Between the magnets of the first magnet arrangement 102 and the magnet of the second magnet arrangement 104 can the magnetizable body 108 be arranged, for example, analogous to the previous description.

4B illustrates the in 4A shown magnetron arrangement 100 in a schematic cross-sectional view, for example transversely to the longitudinal extent of the first magnet arrangement 102 , eg transverse to that of the direction 103 and the direction 105 spanned level.

According to various embodiments, the cathode 106 be arranged such that these are the magnets of the first magnetic arrangement 102 and the magnets of the second magnet arrangement 104 covers. Furthermore, the cathode 106 relative to the magnet arrangements 102 . 104 be arranged such that one of the magnet arrangements 102 . 104 generated common magnetic field penetrates through the cathode and into the plasma region 406 extends.

The plasma area 406 Can on a the magnet arrangements 102 . 104 opposite side of the cathode 106 extends its. In other words, the cathode 106 between the magnetic arrangements 102 . 104 and the plasma area 406 be arranged.

That of the magnet arrangements 102 . 104 generated common magnetic field can be the cathode 106 penetrate with a spatial distribution, as in 4C is illustrated.

4C illustrates a spatial distribution of the magnetic field 407 according to various embodiments in a schematic diagram 200 along the longitudinal extent of the first magnet arrangement 102 (or the cathode 106 ), eg along the direction 101 , eg along a plane 402 which may be extended within the plasma region (cf. 4B ) and / or through the cathode 106 penetrates through.

The spatial distribution of the magnetic field 407 can, for example, a magnetic field strength 405 , eg a magnetic flux 405 and / or a magnetic flux density 405 exhibit. For example, the spatial distribution of the magnetic field 407 a directional component of the magnetic flux 405 and / or the magnetic flux density 405 have, for example, a directional component perpendicular to the plane 402 ,

The spatial distribution of the magnetic field 407 can, for example, a magnetic field strength 405 which is greater than a critical magnetic field strength 407k , The critical magnetic field strength 407k can clearly describe when a plasma formation is favored by the magnetic field. For example, a plasma formation may be favored if a magnetic field strength 405 is greater than the critical magnetic field strength 407k ,

In an area where the magnetizable body 108 can be arranged, the magnetic field strength 405 for example, toned down 407R be. The magnetizable body 108 can be set up in such a way (eg sufficiently weaken the magnetic field) that the spatial distribution of the magnetic field 407 in the area where the magnetizable body 108 is arranged, a magnetic field strength 405 which is smaller than the critical magnetic field strength 407k , In other words, in the area in which the magnetizable body 108 is arranged, a magnetic flux 405 and / or a magnetic flux density 405 reduced through the cathode and / or through the plasma region 407R be. This can be achieved, for example, that in the area in which the magnetizable body 108 is arranged, a plasma formation is reduced (in other words attenuated) and / or the course of the plasma channel is influenced.

To the spatial distribution of the magnetic field 407 in any area (eg in a subregion of the plasma region) to influence, eg attenuate, and / or to influence the course of the plasma channel, the magnetizable body 108 in the area where the spatial distribution of the magnetic field 407 to be influenced. Furthermore, a magnetic field strength 405 more reduced 407R become, the larger the magnetizable body 108 is, in other words, the more volume the magnetizable body 108 having.

Furthermore, a gradient of the spatially distributed magnetic field 407 by means of the shape of the magnetizable body 108 be set. For example, a magnetizable body 108 be wedge-shaped around a gradient of the spatially distributed magnetic field 407 (eg a flux density) to reduce.

5A and 5B illustrate a magnetron arrangement 100 according to various embodiments in a schematic cross-sectional view, wherein in 5A one as tube magnetron 100 furnished magnetron arrangement 100 and in 5B one as Planarmagnetron 100 furnished magnetron arrangement 100 is shown.

A tubular magnetron 100 may be a tubular cathode 106 , a so-called tubular cathode 106 , exhibit. The tube cathode 106 can be a target tube 106 on which the target material can be attached as a layer on an outer circumferential surface of the target base tube and can partially cover the lateral surface of the target base tube. Clearly, the target base tube and the target material can be part of a tube cathode. Alternatively, a tube cathode 106 a tube-shaped target material (a so-called target tube 106 ) (eg a tube of target material).

The tube cathode 106 can by means of so-called end blocks (eg in one direction 501 ), wherein the end blocks may further provide for supplying the tubular cathode (eg, with electrical energy and coolant). According to various embodiments, one of the end blocks may be coupled to a drive for rotating the tube cathode (drive end block) and the other one of the end blocks for supplying and discharging coolant (eg cooling water) through the tube cathode 106 can be passed through. For this purpose, a media end block can have, for example, a pipeline.

That through the tube cathode 106 passed through coolant can cause corrosion in the tube cathode 106 arranged components of the magnetron arrangement 100 favor. To corrosion in the tubular cathode 106 arranged components of the magnetron arrangement 100 To reduce, those in the tube cathode can 106 arranged components of the magnetron arrangement 100 be corrosion resistant and, for example, have a corrosion-resistant material and / or be coated or encapsulated with a corrosion-resistant material.

The arranged in the tube cathode magnet arrangements 102 . 104 may be coupled to the end blocks such that the magnet assemblies 102 . 104 when turning the tube cathode 106 remain in a fixed position relative to the end blocks. This may be the magnetron arrangement 100 a carrier structure 502 on which the magnet arrangements 102 arranged, for example, fixed, can be. The support structure 502 can be attached to a so-called carrier tube 508 , which runs between the two end blocks, be attached. The carrier tube 508 can be decoupled from the tube cathode 106 be stored so that this turns when the tube cathode 106 not with the tube cathode 106 rotates. Illustratively, a magnetron arrangement 100 be held such that the tube cathode 106 decoupled from the magnet arrangements 102 . 104 is stored and can be rotated.

The support structure 502 may have a curved surface on which the magnets of the magnet assemblies 102 . 104 can be arranged. By means of the curved surface of the support structure 502 can be clearly achieved that the magnets of the magnet arrangements 102 . 104 vividly as close as possible to the tube cathode 106 can be arranged so that much of the magnets of the magnet assemblies 102 . 104 generated magnetic field through the tube cathode 106 penetrates through.

Due to the curved surface of the support structure 502 can the magnets of the magnet arrangements 102 . 104 be tilted against each other or so that their magnetization substantially perpendicular to the tube cathode 106 runs. As a result, it can be clearly achieved that a large part of the tube cathode 106 penetrating magnetic flux 111 vividly as vertically as possible out of the tube cathode 106 exit (in other words, the magnetic field lines 111 as perpendicular as possible out of the tube cathode 106 exit). Indicates the magnetron arrangement 100 a planar magnetron 100 on, can the support structure 502 as a carrier plate 502 be trained as in 5B is shown, wherein the magnet arrangements 102 . 104 on the carrier plate 502 can be arranged. The cathode 106 a planar magnetron 100 can be used as a plate-shaped (eg as a planar) cathode 106 be educated.

On the magnet arrangements 102 . 104 opposite side of the cathode 106 (the tube cathode 106 or the plate-shaped cathode 106 ) can be a plasma area 406 may be extended, in which a plasma can be generated. In the plasma area 406 can be a plasma channel 506 run, with the plasma in the plasma channel 506 can be formed. The plasma channel 506 can run along a closed path. In other words, the plasma channel 502 as a self-contained plasma channel 502 , eg in the form of a race track 502 be trained. By means of the plasma, the cathode can 106 and / or one at the cathode 106 arranged target material are atomized.

Between the magnets of the first magnet arrangement 102 and the magnet of the second magnet arrangement 104 can the magnetizable body 108 be arranged such that a part of the magnetic field 113 from the magnetizable body 108 redirected so that this part of the magnetic field 113 the cathode 106 does not penetrate. This can cause the magnetic field 111 the plasma channel 506 weakened penetrate.

5C illustrates a magnetron arrangement 100 according to various embodiments in a schematic cross-sectional view, as an alternative to the curved surface of the support structure 502 (compare for example 5A ) a perpendicular orientation of the magnets to the normal of the target surface by means of a prismatic running support structure 502 , eg by means of a support structure 502 with a trapezoidal cross section (in a sectional plane perpendicular to the direction 105 ), can be achieved, for example by the magnets on obliquely oriented surfaces 502s the support structure 502 to be assembled.

6A and 6B illustrate a magnetron arrangement 100 according to various embodiments, wherein 6A the magnetron arrangement 100 in a schematic plan view or cross-sectional view from the direction 105 and 6B in the 6A shown magnetron arrangement 100 in a schematic plan view or cross-sectional view transverse to the direction 105 shows.

The shape and / or the course of the plasma channel may depend on the geometry of the magnet arrangements 102 . 104 to be influenced. For example, the magnet arrangements 102 . 104 be configured such that the plasma channel at the end portions of the first magnet arrangement 102 (the so-called reversal area 602 ) has a curved portion extending. Illustratively, the course of the plasma channel can be essentially the Contour of the distance between the magnet arrangements 102 . 104 consequences.

According to various embodiments, the magnetron arrangement 100 several (eg two, three, four, five, more than five) magnetizable body 108 having two magnetizable body 108 the multiple magnetizable body 108 in 6A and 6B are shown. In the 6A and 6B shown magnetizable body 108 can be on both sides of the first magnet arrangement 102 be arranged. In other words, two magnetizable bodies can each 108 be arranged such that at least one magnet of the first magnet arrangement 102 between the two magnetizable bodies 108 is arranged.

For example, in accordance with various embodiments, multiple (eg, two, three, or more than three) magnets of the first magnet assembly may be used 102 between the two magnetizable bodies 108 be arranged. Clearly more magnets between the two magnetizable bodies 108 be arranged, the greater an extension of the two magnetizable body 108 is formed (eg along the longitudinal extent of the first magnet arrangement 102 , eg along direction 101 ).

The two magnetizable bodies can, as described above, be configured wedge-shaped. As a result, it can be achieved, for example, that a magnetic field strength of the magnetic field which penetrates the cathode, in the direction of the reverse region 602 (eg in the direction 101 ) can lose weight.

According to various embodiments, a magnetizable body 108 on one of the magnet arrangements 102 . 104 be attached, for example, to the first magnet arrangement 102 , as in 6A and 6B is shown.

It can do this by means of the magnet arrangements 102 provided magnetic field between the first magnet arrangement 102 and the magnetizable body 108 impart a force so that the magnetizable body 108 with the force against the first magnet arrangement 102 pressed. The greater the force with which a magnetizable body 108 against the first magnet arrangement 102 the better the magnetizable body can be 108 descriptive of the first magnet arrangement 102 204 be attached.

Should a magnetizable body 108 be in an unstable position (eg alignment and / or position) or be attached, for example in a position from which the magnetizable body 108 is deflected due to the mediated force, the magnetizable body 108 by means of a connecting element (eg a clamp, a screw, or a thread), in other words by means of a device for mechanically securing the magnetizable body 108 , on one of the magnet arrangement 102 . 104 and / or the support structure 502 be attached.

For example, according to various embodiments, a nonmagnetic support structure (eg, a die and / or a wedge) may be used to form the magnetizable body 108 to stabilize in an unstable position, orientation and / or position. The non-magnetic support structure may comprise, for example, aluminum, non-magnetic steel and / or a plastic. For example, the magnetizable body 108 by means of the support structure at a distance from the first magnet arrangement 102 to be ordered.

6C illustrates a magnetron arrangement 100 According to various embodiments in a schematic cross-sectional view or top view, wherein, analogous to the preceding description, a magnetizable body 108 one-sided to the first magnet arrangement 102 can be arranged. This can be achieved, for example, that the plasma channel at the reversal area 602 runs asymmetrically. For example, according to various embodiments, it is possible to switch between a symmetrical course of the plasma channel and an asymmetrical course of the plasma channel, without exchanging magnets of the magnet system and / or having to change their position by adjusting the position of the magnetizable body 108 is changed.

6D illustrates the in 6A shown magnetron arrangement 100 in a schematic perspective view.

According to various embodiments, two or more than two magnetizable bodies 108 on both sides of the first magnet arrangement 102 or analogously to 6C be arranged on one side or be.

According to various embodiments, the magnets may be at the reversal area 602 be arranged differently, compare to it 6A and 6D , For example, the magnets can be reversed 602 be arranged such that the course of the plasma channel corresponds to a predetermined course or a predetermined geometry.

7 illustrates a coating arrangement 300 according to various embodiments in a schematic cross-sectional view.

The coating arrangement 300 can be a vacuum processing chamber 702 for providing a plasma-forming gas within a plasma region 406 and for processing a substrate 704 in a processing area 701 the vacuum processing chamber 702 exhibit. This can be done by the vacuum processing chamber 702 a chamber housing 706 which may be airtight, dustproof and / or vacuum-tight set up or can be. Furthermore, the chamber housing 706 the vacuum processing chamber 702 be connected to a gas supply, allowing the interior of the vacuum processing chamber 702 a plasma-forming gas (process gas) or a gas mixture (eg from a process gas and a reactive gas) can be supplied by means of the gas supply.

A vacuum processing chamber 702 For example, a chamber housing 706 have, which as a vacuum chamber housing 706 or as a vacuum chamber housing 706 is set up. A vacuum chamber housing 706 or a vacuum chamber housing 706 can clearly be set up stable enough to the vacuum processing chamber 702 evacuate (in other words pump off) so that from the outside against the vacuum processing chamber 702 a pressure (eg, air pressure and / or atmospheric pressure) may act when the vacuum processing chamber 702 is evacuated without the vacuum processing chamber 702 irreversibly deformed.

To provide a vacuum or at least a negative pressure within the vacuum processing chamber 702 can the vacuum processing chamber 702 For example, be connected to a vacuum pump system, wherein by means of the vacuum pumping system gas from the interior of the vacuum processing chamber 702 can be pumped out.

Furthermore, the coating arrangement 300 one in the vacuum processing chamber 702 arranged magnetron arrangement 100 exhibit. The magnetron arrangement 100 may be arranged such that from the plasma-forming gas, a plasma in the plasma region 106 can be formed, wherein by means of the plasma target material from the cathode of the magnetron arrangement 100 can be atomized. Clearly sputtered target material from the magnet arrangement can occur during sputtering 100 away in the processing area 701 spread so that in the processing area 701 a substrate 704 can be coated with the atomized target material.

The magnetron arrangement 100 may be arranged as described above and a tubular magnetron 100 or a planar magnetron 100 have (see for example 5A and 5B ).

The vacuum processing chamber 702 can an opening 708 in the chamber housing 706 the vacuum processing chamber 702 having, through the opening 708 through a substrate 704 in the vacuum processing chamber 702 into or out of the vacuum processing chamber 702 can be brought out.

The processing arrangement 300 can be a transport system 712 (For example, transport rollers or a conveyor belt) for transporting the substrate 704 in the processing area 701 into, or to transport the substrate 704 from the processing area 701 out, or to transport the substrate 704 in the processing area 701 ,

8th illustrates a method 800 according to various embodiments in a schematic view. The method can be used according to various embodiments 802 generating a magnetic field having a magnetic field characteristic by means of a first magnet arrangement 102 with several magnets and a second magnet arrangement 104 having a plurality of magnets, wherein the first magnet arrangement 102 and the second magnet arrangement 104 can be arranged at a distance to each other. The first magnet arrangement 102 and the second magnet arrangement 104 can clearly a magnet system of a magnetron arrangement 100 according to various embodiments.

The procedure 800 can also be found in 804 determining data representing the magnetic field characteristic. The determination of data representing the magnetic field characteristic may include, for example, determining a spatial distribution of the magnetic field. The spatial distribution of the magnetic field can, for example, have a spatial distribution of a magnetic field strength, for example of a magnetic flux, for example a directional component of a magnetic flux and / or a magnetic flux density.

The determination of data which represent the magnetic field characteristic can, for example, comprise the determination of a force mediated by the magnetic field, for example a spatial distribution of a force mediated by the magnetic field. The mediated force can be determined, for example, by means of a test specimen (for example a magnet) on which the magnetic field can act. For this purpose, the specimen on the magnet arrangements 102 . 104 be arranged and determined in dependence on the position and orientation of the specimen, a force acting on the specimen. The determined as a function of the position and orientation of the specimen force can clearly represent a magnetic field strength.

The determination of data which represent the magnetic field characteristic can, for example, comprise the determination of a coating characteristic (eg a spatially distributed thickness or spatially distributed properties, such as conductivity and / or transparency) of a layer which can be detected by means of the magnetron arrangement 100 is / was isolated.

The determination of data representing the magnetic field characteristic may include, for example, determining a trace (e.g., shape) of the plasma channel.

For example, determining data representing the magnetic field characteristic may include determining a plasma characteristic, e.g. optical emission lines, the generated plasma generated by the magnetron arrangement / was.

The procedure 800 can also be found in 804 arranging a magnetizable body 108 between the first magnet arrangement 102 and the second magnet arrangement 104 have, wherein the magnetizable body 108 can be arranged so that the magnetic field characteristic can be changed, as described above. For example, the magnetic field characteristic can be changed anywhere, for example in the reverse regions of the plasma channel, or between the reverse regions of the plasma channel.

Furthermore, the method can 800 determining data representing the magnetic field characteristic after the magnetizable body 108 has been arranged. Clearly, the adjustment of the magnetic field can be carried out iteratively, by after each placement of a magnetizable body 108 a magnetic field characteristic is determined.

The procedure 800 may further change a position (eg, a position and / or an orientation) of a magnetizable body 108 which, between the first magnet arrangement 102 and the second magnet arrangement 104 is arranged to change the magnetic field characteristic.

Claims (11)

Magnetron arrangement ( 100 ), a first magnet arrangement ( 102 ) with a plurality of magnets and a second magnet arrangement ( 104 ) with several magnets at a distance ( 109d ) are arranged to each other; A cathode ( 106 ) for generating an electric field which at least the distance between the two magnet arrangements ( 102 . 104 ) covers; • wherein the magnets of both magnet arrangements ( 102 . 104 ) are magnetized such that they have a common, the cathode ( 106 ) penetrating magnetic flux generated from the magnets of the first magnet arrangement ( 102 ) and into the magnets of the second magnet arrangement ( 104 ) entry; A magnetizable body ( 108 ) comprising ferromagnetic or ferrimagnetic material, which in such a way between the two magnet arrangements ( 102 . 104 ) is arranged that the the cathode ( 106 ) penetrating magnetic flux from the magnetizable body ( 108 ) is weakened. Magnetron arrangement ( 100 ) according to claim 1, wherein the first magnet arrangement ( 102 ) is elongated and wherein the second magnet arrangement ( 104 ) the first magnet arrangement ( 102 ) surrounds. Magnetron arrangement ( 100 ) according to claim 1 or 2, wherein the magnetizable body ( 108 ) has a soft magnetic material. Magnetron arrangement ( 100 ) according to one of claims 1 to 3, wherein the magnetizable body ( 108 ) is plate-shaped. Magnetron arrangement ( 100 ) according to one of claims 1 to 4, wherein the magnetizable body ( 108 ) is wedge-shaped. Magnetron arrangement ( 100 ) according to one of claims 1 to 5, wherein the magnetizable body ( 108 ) is arranged such that a part of the first magnet arrangement ( 102 ) and / or the second magnet arrangement ( 104 ) leaving magnetic flux the magnetizable body ( 108 ) penetrates. Magnetron arrangement ( 100 ) according to one of claims 1 to 6, further comprising: a support structure for supporting the first magnet arrangement ( 102 ) and / or the second magnet arrangement ( 104 ), wherein the magnetizable body ( 108 ) Is part of the support structure. Magnetron arrangement ( 100 ) according to one of claims 1 to 7, wherein the cathode ( 106 ) is tubular. Magnetron arrangement ( 100 ) according to one of claims 1 to 8, further comprising: a further magnetizable body ( 108 ), which on a the magnetizable body ( 108 ) opposite side of the first magnet arrangement ( 102 ) is arranged. Coating arrangement ( 300 ), a vacuum processing chamber ( 702 ) for providing a plasma-forming gas within a plasma region (US Pat. 406 ) of the vacuum processing chamber ( 702 ); and a magnetron arrangement ( 100 ) according to any one of claims 1 to 9 for forming a plasma in the plasma region from the plasma-forming gas. Procedure ( 800 ) for adapting a magnetic field characteristic of a magnetron arrangement, the method ( 800 ) comprising: generating a magnetic field having a magnetic field characteristic by means of a first magnet arrangement ( 102 ) with a plurality of magnets and a second magnet arrangement ( 104 ) with a plurality of magnets, which are arranged at a distance from each other; • determining data representing the magnetic field characteristic; Arranging a magnetizable body ( 108 ) between the first magnet arrangement ( 102 ) and the second magnet arrangement ( 104 ) for changing the magnetic field characteristic.

Images