CN109802031B - Packaging method and structure of surface acoustic wave device - Google Patents
Packaging method and structure of surface acoustic wave device Download PDFInfo
- Publication number
- CN109802031B CN109802031B CN201811645476.5A CN201811645476A CN109802031B CN 109802031 B CN109802031 B CN 109802031B CN 201811645476 A CN201811645476 A CN 201811645476A CN 109802031 B CN109802031 B CN 109802031B
- Authority
- CN
- China
- Prior art keywords
- acoustic wave
- layer
- wave device
- surface acoustic
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a packaging method and a structure of a surface acoustic wave device, wherein the method comprises the following steps: forming a metal layer on the surface of the carrier plate provided with the temporary bonding layer; forming a salient point and a first medium layer on the metal layer, wherein the first medium layer covers the side wall of the salient point and exposes the salient point; arranging a surface acoustic wave device with a second medium layer on the surface of the first medium layer, wherein the second medium layer is provided with a first gap to expose a bonding pad and a device functional area of the surface acoustic wave device; the salient point is positioned in the first gap corresponding to the bonding pad of the surface acoustic wave device and is electrically connected with the bonding pad of the surface acoustic wave device. According to the invention, the cavity on the surface of the functional region of the device is formed by the second medium layer between the surface acoustic wave device and the first medium layer, and the pad of the surface acoustic wave device is electrically connected with the metal layer by the salient points penetrating through the first medium layer and the second medium layer.
Description
Technical Field
The invention relates to the technical field of packaging, in particular to a packaging method and a structure of a surface acoustic wave device.
Background
Surface Acoustic Wave (SAW) devices have the advantages of small size, high reliability, good consistency, multiple functions, flexible design and the like, so the surface acoustic wave devices are widely applied to radars, communication, air traffic control, sonar and televisions. The surface acoustic wave device utilizes interdigital electrodes to excite, monitor and receive surface acoustic waves on the surfaces of piezoelectric materials such as quartz, lithium niobate, lithium tantalate and the like, so as to complete conversion and processing of 'electric signals-acoustic signals-electric signals'. The surface acoustic wave is very sensitive to the propagation surface of the surface acoustic wave as a mechanical wave, and oil stains, thin films, dust, water vapor or the like on the propagation surface can cause great negative effects on the performance of a surface acoustic wave device. Fig. 1 shows a longitudinal sectional view of a surface acoustic wave device 10, in which 11 is a device substrate, 12 is a device pad, and 13 is a functional region of the device. The functional region 13 is usually disposed with interdigital electrodes for realizing conversion and processing of "electric signal-acoustic signal-electric signal". For the surface acoustic wave device, a vacuum or air layer is required on the surface of the functional region 13, and the encapsulating material cannot be in direct contact with the surface. The surface acoustic wave device will be disabled if the material such as plastic package material directly contacts the surface of the functional region 13, so the packaging method directly contacting the surface of the device cannot be used for packaging the surface acoustic wave device.
The prior art provides a method for packaging a surface acoustic wave device, which includes the following steps: s1, forming a first medium layer 3 on the carrier plate 1 provided with the temporary bonding layer 2 and forming a pattern window therein; s2, forming a metal wiring layer 4 on the first dielectric layer 3; s3, forming a second dielectric layer 5 on the metal wiring layer 4 and forming a pattern window therein, so as to expose the connection point of the metal wiring layer 4 and be used for forming electric connection with the salient point of the surface acoustic wave device; s4, forming a third dielectric layer 6 on the second dielectric layer 5, and forming a ring of dam-shaped enclosure in the third dielectric layer 6 as a frame structure by a photoetching method, wherein the middle hollow size of the dam-shaped enclosure is slightly smaller than the size of the device, so that the periphery of the device can be covered on the frame structure, and meanwhile, the salient points of the device can penetrate through the hollow part in the middle of the frame structure to be connected to the connection points of the exposed metal lines 4 of the substrate (comprising the first dielectric layer 3, the metal wiring layer 4 and the second dielectric layer 5) of the heavy wiring layer; FIG. 2A shows a longitudinal cross-sectional view of the structure resulting from steps S1 through S4 above, and FIG. 2B shows a top view of a third dielectric layer; s5, forming solder 7 on the exposed metal circuit 4 connection point, as shown in fig. 2C; s6, flip-chip mounting the surface acoustic wave device 8 with the salient points on a rewiring substrate (comprising the first dielectric layer 3, the metal wiring layer 4 and the second dielectric layer 5) according to the array, and electrically connecting the salient points of the surface acoustic wave device 8 with the connection points of the exposed metal circuit 4; and S7, finally forming the molding layer 9.
According to the packaging method of the surface acoustic wave device, the dam-shaped enclosure is required to be formed on the rewiring layer to serve as a frame structure, three dielectric layers are required to be formed, the process is complex, and the cost is high.
Disclosure of Invention
In view of this, embodiments of the present invention provide a method and a structure for packaging a surface acoustic wave device, so as to solve the problems of complicated process and high cost of the conventional packaging method.
According to a first aspect, an embodiment of the present invention provides a method for packaging a surface acoustic wave device, where a functional region of the surface acoustic wave device and a pad are located on the same surface; the method comprises the following steps: forming a metal layer on the surface of the carrier plate provided with the temporary bonding layer; forming a salient point and a first medium layer on the metal layer, wherein the first medium layer covers the side wall of the salient point and exposes the salient point; arranging a surface acoustic wave device with a second medium layer on the surface of the first medium layer, wherein a first notch is arranged on the second medium layer to expose a bonding pad and a device functional area of the surface acoustic wave device; the salient points are positioned in the first notches corresponding to the bonding pads of the surface acoustic wave device and are electrically connected with the bonding pads of the surface acoustic wave device.
According to a second aspect, an embodiment of the present invention provides a method for packaging a surface acoustic wave device, where a functional region of the surface acoustic wave device and a pad are located on the same surface; the method comprises the following steps: forming a salient point and a second medium layer on the surface of the surface acoustic wave device, wherein the second medium layer covers the side wall of the salient point and exposes the salient point; forming a metal layer on the surface of the carrier plate provided with the temporary bonding layer; forming a first dielectric layer on the metal layer, and forming a first gap on the first dielectric layer; arranging a surface acoustic wave device with a salient point and a second medium layer on the surface on the first medium layer; and the convex point on the surface acoustic wave device corresponds to the first notch on the first dielectric layer and is electrically connected with the metal layer.
As an optional implementation of the first aspect or the second aspect, the method further comprises: and forming a molding layer on the surface of the second medium layer.
As an optional implementation of the first aspect or the second aspect, the method further comprises: removing the carrier plate to expose the metal layer; photoetching the metal layer to form a metal circuit; forming a third dielectric layer on the surface of the metal layer, and forming a second gap on the third dielectric layer to expose the metal circuit; and arranging a solder ball at the position of the second notch.
As an optional implementation manner of the first aspect or the second aspect, when the metal circuit is formed by photolithography of the metal layer, a metal corresponding to the position of the device functional region on the metal layer is retained.
According to a third aspect, an embodiment of the present invention provides a package structure of a surface acoustic wave device, including: the functional area of the surface acoustic wave device and the bonding pad are positioned on the same surface; the second dielectric layer is arranged on the surface of the surface acoustic wave device, and a first notch is formed in the surface of the second dielectric layer so as to expose a bonding pad and a device functional area of the surface acoustic wave device; the salient point is arranged at the position of the first notch, and one end of the salient point is electrically connected with the bonding pad of the surface acoustic wave device; the first dielectric layer is arranged on the surface of the second dielectric layer, the other end of the salient point is exposed, and a cavity is formed between the first dielectric layer and the functional area of the device; and the metal layer is arranged on the surface of the first dielectric layer and is electrically connected with the other end of the salient point.
Optionally, the package structure further includes: and the mold sealing layer is arranged on the surface of the second dielectric layer and wraps the surface acoustic wave device and the first dielectric layer.
Optionally, the metal layer is subjected to photolithography to form a metal line; the package structure further includes: the third dielectric layer is arranged on the surface of the metal layer, and a second gap is formed on the third dielectric layer to expose the metal circuit; and the solder balls are arranged at the positions of the second gaps and are electrically connected with the exposed metal circuits.
Optionally, a metal corresponding to the position of the device functional region remains on the metal layer.
According to the packaging method and the structure of the surface acoustic wave device, the cavity on the surface of the functional region of the device is formed through the second medium layer between the surface acoustic wave device and the first medium layer, the pad of the surface acoustic wave device is electrically connected with the metal layer through the salient points penetrating through the first medium layer and the second medium layer, so that the pad is led out, the whole packaging structure only needs to manufacture two medium layers, the process is simple, and the cost is low.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 shows a longitudinal cross-sectional view of a surface acoustic wave device 10;
FIGS. 2A to 2E are schematic structural diagrams obtained by partial steps of a packaging method of a surface acoustic wave device in the prior art;
FIG. 3A shows a flow chart of a method of packaging a SAW device in accordance with embodiments of the present invention;
FIG. 3B is a flow chart illustrating another method of packaging a surface acoustic wave device according to an embodiment of the present invention;
FIG. 4A shows a flow chart of yet another method of packaging a SAW device in accordance with embodiments of the present invention;
FIG. 4B is a flow chart illustrating a further method of packaging a SAW device in accordance with embodiments of the present invention;
fig. 5A to 5L are schematic structural diagrams obtained by partial steps of a packaging method of a surface acoustic wave device according to an embodiment of the present invention;
fig. 6A to 6K are schematic structural diagrams obtained by partial steps of a packaging method of a surface acoustic wave device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
An embodiment of the present invention provides a package structure of a surface acoustic wave device, as shown in fig. 5L and fig. 6K, the package structure includes a surface acoustic wave device 10, a second dielectric layer 20, a bump 70, a first dielectric layer 60, and a metal layer 50.
Referring to fig. 1, 11 is a substrate of the surface acoustic wave device 10, 12 is a bonding pad, 13 is a functional region of the device, and the functional region 13 of the device and the bonding pad 12 are located on the same surface of the device.
The second dielectric layer 20 is disposed on the surface of the surface acoustic wave device 10, and the surface of the second dielectric layer 20 is provided with a first gap to expose the pad 12 and the device functional region 13 of the surface acoustic wave device 10.
As can be seen from fig. 5E or fig. 6E, the bump 70 is disposed at the first gap of the second dielectric layer 20, and one end of the bump is electrically connected to the pad 12 of the surface acoustic wave device 10.
The first dielectric layer 60 is disposed on the surface of the second dielectric layer 20, and exposes the other end of the bump 70, and a cavity a is formed between the first dielectric layer and the functional region 13 of the device.
The metal layer 50 is disposed on the surface of the first dielectric layer 60 and electrically connected to the other end of the bump 70.
According to the packaging structure of the surface acoustic wave device, the cavity on the surface of the functional area of the device is formed by the second medium layer between the surface acoustic wave device and the first medium layer, and the pad of the surface acoustic wave device is electrically connected with the metal layer through the salient points penetrating through the first medium layer and the second medium layer, so that the pad is led out.
As an optional implementation manner of this embodiment, the package structure further includes a mold sealing layer 80 disposed on the surface of the second dielectric layer 60, and covering the surface acoustic wave device 10 and the first dielectric layer 20.
As an alternative to this embodiment, the metal layer 50 is formed into metal lines by photolithography. The package structure further includes a third dielectric layer 110 and solder balls 120.
The third dielectric layer 110 is disposed on the surface of the metal layer 50, and a second gap is formed on the third dielectric layer 110 to expose the metal circuit. The solder ball 120 is disposed at the second gap and electrically connected to the exposed metal line.
Optionally, metal corresponding to the position of the device functional region 13 remains on the metal layer 50, so as to support and protect the package structure.
Example two
Fig. 3A is a flowchart illustrating a method for packaging a surface acoustic wave device according to an embodiment of the present invention, where the method packages a surface acoustic wave device with functional area pads on the same surface, so as to obtain a package structure according to the first embodiment or any optional implementation manner of the first embodiment. As shown in fig. 3A, the method includes the steps of:
s101: and forming a metal layer on the surface of the carrier plate provided with the temporary bonding layer.
As shown in fig. 5A to 5C, 30 is a carrier, 40 is a temporary bonding layer, and 50 is a metal layer. The carrier 30 may be made of silicon, glass, metal, etc. The temporary bonding layer 40 may be debonded by heating, force, chemical etching, or the like. The metal layer 50 may be deposited on the surface of the temporary bonding layer 40 by a physical or chemical deposition method (e.g., evaporation, electroplating, chemical plating, etc.), and the metal is typically copper, but may also be other metals, such as aluminum, tungsten, etc.
S102: and forming a salient point and a first medium layer on the metal layer, wherein the first medium layer covers part of the side wall of the salient point and exposes the salient point.
As shown in fig. 5D and 5E, in step S102, a first dielectric layer 60 may be formed on the metal layer 50, a notch may be formed on the first dielectric layer 60 by photolithography, and then the bump 70 may be disposed at the notch. Alternatively, in step S102, the bump 70 may be formed first, and then the first dielectric layer 60 is formed on the metal layer 50, where the first dielectric layer 60 covers a portion of the sidewall of the bump 70 and exposes the bump 70. The present application does not limit the specific implementation form of step S102.
S103: arranging a surface acoustic wave device with a second medium layer on the surface of the first medium layer, wherein the second medium layer is provided with a first gap to expose a bonding pad and a device functional area of the surface acoustic wave device; the salient point is positioned in the first gap corresponding to the bonding pad of the surface acoustic wave device and is electrically connected with the bonding pad of the surface acoustic wave device.
As shown in fig. 5F, a second dielectric layer 20 may be formed on the surface of the surface acoustic wave device 10, and then a first notch may be formed by photolithography to expose the pad 12 and the functional region 13 of the surface acoustic wave device 10.
Then, as shown in fig. 5G, the surface acoustic wave device 10 shown in fig. 5F is disposed on the surface of the first dielectric layer 60 such that the bumps 70 are located in the first notches corresponding to the pads 12 of the surface acoustic wave device 10 and electrically connected to the pads 12 of the surface acoustic wave device 10.
According to the packaging method of the surface acoustic wave device, the metal layer is formed firstly, then the salient point and the first medium layer are formed on the metal layer, the surface acoustic wave device with the second medium layer arranged on the surface and the first gap arranged on the second medium layer to expose the device pad and the functional area is arranged on the surface of the first medium layer, and the salient point is located in the first gap corresponding to the device pad, so that a cavity on the surface of the functional area of the device is formed, the salient point penetrates through the first medium layer and the second medium layer to realize the electric connection between the device pad and the metal layer and lead the pad out, the whole packaging method only needs to manufacture two layers of medium layers, the process is simple, and the cost is low.
As an alternative implementation manner of this embodiment, as shown in fig. 3B, the packaging method further includes the following steps:
s104: and forming a molding layer on the surface of the second dielectric layer. As shown in fig. 5H, 80 is a mold seal layer.
S105: and removing the carrier plate to expose the metal layer.
S106: and temporarily bonding a second carrier plate on the surface of the mold sealing layer. As shown in fig. 5I, 90 is a temporary bonding layer, and 100 is a second carrier.
S107: and photoetching the metal layer to form a metal circuit. As shown in fig. 5J.
S108: and forming a third dielectric layer on the surface of the metal layer, and forming a second gap on the third dielectric layer to expose the metal circuit. As shown in fig. 5K, 110 is a third dielectric layer.
S109: and arranging a solder ball at the position of the second notch. As shown in fig. 5L, 120 are solder balls.
Optionally, when the metal layer 50 is etched to form the metal line in step S107, the metal layer corresponding to the position of the device functional region 13 on the metal layer 50 is retained, that is, the metal layer at the position B shown in fig. 5J, that is, the metal layer at the inner wall surface of the cavity sidewall a is retained.
EXAMPLE III
Fig. 4A is a flowchart illustrating another surface acoustic wave device packaging method according to an embodiment of the present invention, which packages a surface acoustic wave device with functional area pads on the same surface, so as to obtain a package structure according to the first embodiment or any optional implementation manner of the first embodiment. As shown in fig. 4A, the method includes the steps of:
s201: and forming a salient point and a second medium layer on the surface of the surface acoustic wave device, wherein the second medium layer covers the side wall of the salient point and exposes the salient point.
As shown in fig. 6E, 10 is a surface acoustic wave device, 20 is a second dielectric layer, and 70 is a bump.
In step S201, a second dielectric layer 20 may be formed on the surface of the surface acoustic wave device 10, a notch may be formed on the second dielectric layer 20 by photolithography, and then a bump 70 may be disposed at the notch. Alternatively, step S201 may be to form the bump 70 first, and then form the second dielectric layer 20 on the surface of the surface acoustic wave device 10. The present application does not limit the specific implementation form of step S201.
S202: and forming a metal layer on the surface of the carrier plate provided with the temporary bonding layer.
As shown in fig. 6A to 6C, 30 is a carrier, 40 is a temporary bonding layer, and 50 is a metal layer. The carrier 30 may be made of silicon, glass, metal, etc. The temporary bonding layer 40 may be debonded by heating, force, chemical etching, or the like. The metal layer 50 may be deposited on the surface of the temporary bonding layer 40 by a physical or chemical deposition method (e.g., evaporation, electroplating, chemical plating, etc.), and the metal is typically copper, but may also be other metals, such as aluminum, tungsten, etc.
S203: a first dielectric layer is formed on the metal layer, and a first gap is formed on the first dielectric layer.
As shown in fig. 6D, 60 is a first dielectric layer.
S204: arranging a surface acoustic wave device with a salient point and a second medium layer on the surface on the first medium layer; the convex point on the surface acoustic wave device corresponds to the first notch on the first dielectric layer and is electrically connected with the metal layer.
As shown in fig. 6F, the surface acoustic wave device shown in fig. 6E is disposed on the first dielectric layer 60 (shown in conjunction with fig. 6D) such that the bump 70 on the surface acoustic wave device 10 corresponds to the first notch on the first dielectric layer 60 and is electrically connected to the metal layer 50.
According to the packaging method of the surface acoustic wave device, the salient points and the second medium layer are formed on the surface of the surface acoustic wave device, the metal layer is formed on the carrier plate, the first medium layer is formed on the metal layer, the first gap is formed on the first medium layer, then the surface acoustic wave device with the salient points and the second medium layer is arranged on the first medium layer, and the salient points are located in the first gap corresponding to the device bonding pad, so that a cavity on the surface of the functional area of the device is formed, the salient points penetrate through the first medium layer and the second medium layer, the device bonding pad is electrically connected with the metal layer, and the bonding pad is led out.
As an alternative implementation manner of this embodiment, as shown in fig. 4B, the packaging method further includes the following steps:
s205: and forming a molding seal layer on the surface of the second dielectric layer. As shown in fig. 6G, 80 is a mold seal layer.
S206: and removing the carrier plate to expose the metal layer.
S207: and temporarily bonding a second carrier plate on the surface of the mold sealing layer. As shown in fig. 6H, 90 is a temporary bonding layer, and 100 is a second carrier.
S208: and photoetching the metal layer to form a metal circuit. As shown in fig. 6I.
S209: and forming a third dielectric layer on the surface of the metal layer, and forming a second gap on the third dielectric layer to expose the metal circuit. As shown in fig. 6J, 110 is a third dielectric layer.
S210: and arranging a solder ball at the position of the second notch. As shown in fig. 6K, 120 is a solder ball.
Optionally, when the metal layer 50 is etched to form the metal line in step S208, the metal layer corresponding to the position of the device functional region 13 on the metal layer 50 is retained, that is, the metal layer at the position B shown in fig. 6I is retained, that is, the metal layer at the inner wall surface of the cavity sidewall a is retained.
Although the present invention has been described in detail with respect to the exemplary embodiments and the advantages thereof, those skilled in the art will appreciate that various changes, substitutions and alterations can be made to the embodiments without departing from the spirit and scope of the invention as defined by the appended claims. For other examples, one of ordinary skill in the art will readily appreciate that the order of the process steps may be varied while maintaining the scope of the present invention.
Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.
Claims (5)
1. A packaging method of a surface acoustic wave device is characterized in that a functional area of the surface acoustic wave device and a bonding pad are positioned on the same surface; the method comprises the following steps:
forming a metal layer on the surface of the carrier plate provided with the temporary bonding layer;
forming a salient point and a first medium layer on the metal layer, wherein the first medium layer covers the side wall of the salient point and exposes the salient point;
arranging a surface acoustic wave device with a second medium layer on the surface of the first medium layer, wherein a first notch is arranged on the second medium layer to expose a bonding pad and a device functional area of the surface acoustic wave device; the salient points are positioned in the first notches corresponding to the bonding pads of the surface acoustic wave device and are electrically connected with the bonding pads of the surface acoustic wave device.
2. A packaging method of a surface acoustic wave device is characterized in that a functional area of the surface acoustic wave device and a bonding pad are positioned on the same surface; the method comprises the following steps:
forming a salient point and a second medium layer on the surface of the surface acoustic wave device, wherein the second medium layer covers the side wall of the salient point and exposes the salient point;
forming a metal layer on the surface of the carrier plate provided with the temporary bonding layer;
forming a first dielectric layer on the metal layer, and forming a first gap on the first dielectric layer;
arranging a surface acoustic wave device with a salient point and a second medium layer on the surface on the first medium layer; and the convex point on the surface acoustic wave device corresponds to the first notch on the first dielectric layer and is electrically connected with the metal layer.
3. The method of packaging a surface acoustic wave device according to claim 1 or 2, further comprising:
and forming a molding seal layer on the surface of the second medium layer.
4. The method of packaging a surface acoustic wave device according to claim 1 or 2, further comprising:
removing the carrier plate to expose the metal layer;
photoetching the metal layer to form a metal circuit;
forming a third dielectric layer on the surface of the metal layer, and forming a second gap on the third dielectric layer to expose the metal circuit;
and arranging a solder ball at the position of the second notch.
5. The method for packaging a surface acoustic wave device according to claim 4, wherein a metal corresponding to a functional region of the device is retained on the metal layer when the metal line is formed by photolithography.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811645476.5A CN109802031B (en) | 2018-12-29 | 2018-12-29 | Packaging method and structure of surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811645476.5A CN109802031B (en) | 2018-12-29 | 2018-12-29 | Packaging method and structure of surface acoustic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109802031A CN109802031A (en) | 2019-05-24 |
| CN109802031B true CN109802031B (en) | 2022-07-08 |
Family
ID=66556843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811645476.5A Active CN109802031B (en) | 2018-12-29 | 2018-12-29 | Packaging method and structure of surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109802031B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107786183A (en) * | 2016-08-25 | 2018-03-09 | 通用电气公司 | Embedded RF filter packages structure and its manufacture method |
| CN109037428A (en) * | 2018-08-10 | 2018-12-18 | 付伟 | Chip-packaging structure and preparation method thereof with double cofferdam |
-
2018
- 2018-12-29 CN CN201811645476.5A patent/CN109802031B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107786183A (en) * | 2016-08-25 | 2018-03-09 | 通用电气公司 | Embedded RF filter packages structure and its manufacture method |
| CN109037428A (en) * | 2018-08-10 | 2018-12-18 | 付伟 | Chip-packaging structure and preparation method thereof with double cofferdam |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109802031A (en) | 2019-05-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7271466B2 (en) | Semiconductor device with sidewall wiring | |
| JP4139803B2 (en) | Manufacturing method of semiconductor device | |
| KR101173075B1 (en) | Methods and apparatus for packaging integrated circuit devices | |
| KR100659625B1 (en) | Semiconductor device and method for manufacturing the same | |
| US8766408B2 (en) | Semiconductor device and manufacturing method thereof | |
| US7303400B2 (en) | Package of a semiconductor device with a flexible wiring substrate and method for the same | |
| US20050104204A1 (en) | Wafer-level package and its manufacturing method | |
| EP1734576A1 (en) | Semiconductor device having through electrode and method of manufacturing the same | |
| CN112039456B (en) | Packaging method and packaging structure of bulk acoustic wave resonator | |
| JP2007157844A (en) | Semiconductor device, and method of manufacturing same | |
| EP1478021B1 (en) | Semiconductor device and manufacturing method thereof | |
| US7911043B2 (en) | Wafer level device package with sealing line having electroconductive pattern and method of packaging the same | |
| CN109802031B (en) | Packaging method and structure of surface acoustic wave device | |
| US8304288B2 (en) | Methods of packaging semiconductor devices including bridge patterns | |
| JP3877700B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP5238985B2 (en) | Manufacturing method of semiconductor device | |
| JP4401330B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP2010016395A5 (en) | ||
| CN111627857A (en) | Packaging method and packaging structure | |
| KR20090016836A (en) | A surface acoustic wave package and fabrication method thereof | |
| US10074581B2 (en) | Chip package having a patterned conducting plate and a conducting pad with a recess | |
| KR200148753Y1 (en) | Semiconductor package | |
| JP5414965B2 (en) | Optical semiconductor device and manufacturing method thereof | |
| JP2004006820A (en) | Semiconductor device and its manufacturing method | |
| KR20000076811A (en) | Semiconductor device and manufacturing method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |