CN109791933A - Film layer structure and display panel - Google Patents
Film layer structure and display panel Download PDFInfo
- Publication number
- CN109791933A CN109791933A CN201780058783.0A CN201780058783A CN109791933A CN 109791933 A CN109791933 A CN 109791933A CN 201780058783 A CN201780058783 A CN 201780058783A CN 109791933 A CN109791933 A CN 109791933A
- Authority
- CN
- China
- Prior art keywords
- protective layer
- film layer
- layer
- layer structure
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
Abstract
A kind of film layer structure (100) and display panel.Film layer structure (100) includes substrate (10) and multiple film layer bodies (20), and multiple film layer bodies (20) are arranged at intervals on substrate (10).Film layer body (20) includes the first protective layer (22) and the second protective layer (24); first protective layer (22) is formed on substrate (10), and the second protective layer (24) is formed on the first protective layer (22).
Description
The present invention relates to display technology field more particularly to a kind of film layer structures and display panel.
In the related art, when the film layer structure in display panel carries out wet etching, it generally will use and form protective layer on film layer structure, to prevent main conductive film layer from convex closure phenomenon occur.But when handling after wet etching film layer structure, protective layer is easy to be etched, and main conductive film layer is caused convex closure phenomenon still occur, affects the quality of film layer structure and display panel.
Summary of the invention
A kind of film layer structure and display panel that embodiment of the present invention provides.
The film layer structure that embodiment of the present invention provides includes substrate and multiple film layer bodies; the multiple film layer body is arranged at intervals in the substrate; the film layer body includes the first protective layer and the second protective layer; first protective layer is formed on the substrate, and second protective layer is formed on first protective layer.
In the film layer structure of embodiment of the present invention; second protective layer can protect the first protective layer to avoid by etching corrosion; and then the detraction of the first protective layer can be prevented; simultaneously; first protective layer and the second protective layer form double protection structures; the other layers for avoiding film layer structure are corroded, to ensure that the quality of film layer structure and display panel.
In some embodiments, the film layer body includes conductive layer, and the conductive layer is between the substrate and first protective layer.
In some embodiments, one of which of the conductive layer in aluminium, neodymium al and ni aluminium.
In some embodiments, the material of first protective layer includes molybdenum.
In some embodiments, the material of second protective layer is identical with the material of the conductive layer or not identical.
In some embodiments; the film layer body includes the first conductive layer and the second conductive layer; first conductive layer and second conductive layer are between the substrate and first protective layer, and first conductive layer is than second conductive layer closer to the substrate.
In some embodiments, first conductive layer includes molybdenum.
In some embodiments, one of which of second conductive layer in aluminium, neodymium al and ni aluminium.
In some embodiments, first conductive layer is not identical or identical with the material of first protective layer.
In some embodiments, second conductive layer is not identical or identical with the material of second protective layer.
In some embodiments, second protective layer with a thickness of 10-50 nanometers.
In some embodiments, one of which of the material of second protective layer in aluminium, neodymium aluminium, nickel aluminium, titanium and tin indium oxide.
The display panel of embodiment of the present invention, including film layer structure described in protective layer and any embodiment as above, the protective layer covers the film layer structure.
In the display panel of embodiment of the present invention; second protective layer protects the first protective layer to avoid by etching corrosion, meanwhile, the first protective layer and the second protective layer form double protection structures; it avoids the conductive layer being arranged in substrate and receives corrosion, to ensure that the performance of display panel.
The additional aspect and advantage of embodiment of the present invention will be set forth in part in the description, and partially will become apparent from the description below, or practice through the invention is recognized.
Above-mentioned and/or additional aspect and advantage of the invention will be apparent and be readily appreciated that in the description from combination following accompanying drawings to embodiment, in which:
Fig. 1 is the structural schematic diagram of the film layer structure of embodiment of the present invention；
Fig. 2 is another structural schematic diagram of the film layer structure of embodiment of the present invention；
Fig. 3 is the another structural schematic diagram of the film layer structure of embodiment of the present invention.
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the accompanying drawings, and in which the same or similar labels are throughly indicated same or similar element or elements with the same or similar functions.It is exemplary below with reference to the embodiment of attached drawing description, for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it will be appreciated that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", "upper", "lower", " preceding ", " rear ", " left side ", " right side ", "vertical", "horizontal", "top", "bottom", "inner", "outside", " clockwise ", the orientation or positional relationship of instructions such as " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, it is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must have a particular orientation, it is constructed and operated in a specific orientation, therefore it is not considered as limiting the invention.In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicate the quantity of indicated technical characteristic." first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more feature.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be mechanical connection, be also possible to be electrically connected or can mutually communicate；It can be directly connected, the connection inside two elements or the interaction relationship of two elements can also be can be indirectly connected through an intermediary.For the ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the description of the present invention, unless otherwise clearly defined and limited, fisrt feature second feature "upper" or "lower" may include that the first and second features directly contact, may include the first and second features be not direct contact but by the other characterisation contact between them yet.Moreover, fisrt feature includes fisrt feature right above second feature and oblique upper above the second feature " above ", " above " and " above ", or first feature horizontal height is merely representative of higher than second feature.Fisrt feature is directly below and diagonally below the second feature including fisrt feature under the second feature " below ", " below " and " below ", or is merely representative of first feature horizontal height less than second feature.
Following disclosure provides many different embodiments or example is used to realize different structure of the invention.In order to simplify disclosure of the invention, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and is not intended to limit the present invention.In addition, the present invention repeat reference numerals and/or reference letter, this repetition can be for purposes of simplicity and clarity, itself not indicate the relationship between discussed various embodiments and/or setting in different examples.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art may be aware that other techniques application and/or other materials use.
Fig. 1-Fig. 3, a kind of film layer structure 100 that embodiment of the present invention provides, including substrate 10 and multiple film layer bodies 20, multiple film layer bodies 20 are please referred to be arranged at intervals in substrate 10.Film layer body 20 includes the first protective layer 22 and the second protective layer 24, and the first protective layer 22 is formed on the substrate 10, and the second protective layer 24 is formed on the first protective layer 22.
In the film layer structure 100 of embodiment of the present invention; second protective layer 24 can protect the first protective layer 22 to avoid by etching corrosion; and then the detraction of the first protective layer 22 can be prevented; simultaneously; first protective layer 22 and the second protective layer 24 form double protection structures; the other layers for avoiding film layer structure 100 are corroded, to ensure that the quality of film layer structure 100 and display panel.
Specifically, in the conventional fabrication processes of film layer structure 100, generally use one layer of material as main conductive film layer, but main conductive film layer is easy to be corroded, and generates convex closure phenomenon.To solve this problem, a protective layer generally is plated in main conductive film layer.But needed in the manufacturing process of film layer structure 100 by wet etch process, wet etch process needs one layer photoresist of surface portion region overlay in film layer structure 100 in the process, then with erosion
It carves the region that liquid does not cover photoresist to film layer structure 100 to be etched, wipes the etching solution on 100 surface of film layer structure after the completion of wet etch process off with air knife again.But the pressure demand of air knife is larger, causes the photoresist on film layer structure 100 to form notch, protective layer is exposed.When film layer structure 100 is placed into and is cleaned in rinsing bowl, the acidic materials in rinsing bowl can quickly be eroded protective layer, and then corrode primary conductive layer.In this way, film layer structure 100 still will appear convex closure phenomenon, the electric conductivity of film layer structure 100 is affected.
In film layer structure 100 in embodiment of the present invention, the first protective layer 22 can be metal material, and compare the material that primary conductive layer uses in traditional handicraft, more resistant to the corrosion of the acidic materials in etching solution and rinsing bowl.The anti-corrosion capability of second protective layer 24 is than the first protective layer the last 22.In this way, even if the photoresist on 100 surface of film layer structure forms notch, the second protective layer 24 will not be corroded when clearing up using etching solution of the air knife to 100 surface of film layer structure, the first protective layer 22 is preferably protected.
In some instances, substrate 10 can be the hard insulations such as quartz glass.
In some embodiments, Fig. 2 please be join, film layer body 20 includes conductive layer 26, and conductive layer 26 is located between substrate 10 and the first protective layer 22.
In this way, the first protective layer 22 is preferably protected, and then conductive layer 26 is not easy to be corroded to, and the electric conductivity of film layer structure 100 is guaranteed since the second protective layer 24 is slower compared to the speed that the first protective layer 22 is corroded.
Specifically, the second protective layer 24 is attached to the first protective layer 22 and the technique for being attached together the first protective layer 22 and conductive layer 26 can be magnetron sputtering technique.Magnetron sputtering technique is one kind of physical vapour deposition (PVD); have the characteristics that equipment is simple, easily controllable, plated film area is big and film adhesion is strong; the adhesive force between conductive layer 26, the first protective layer 22 and the second protective layer 24 formed using magnetron sputtering technique is larger, and film layer structure 100 is also more stable.
Fig. 1 and film layer structure shown in Fig. 2 100 can be applied to the gate structure (GE Layer) of display panel, film layer structure 100 shown in Fig. 3 can be applied to the source configuration and drain electrode structure (SD Layer) of display panel, so, field-effect tube is collectively formed in gate structure, source configuration and drain electrode structure, realizes the conducting of circuit in display panel.
In some embodiments, one of which of the conductive layer 26 in aluminium (Al), neodymium aluminium (AlNd) and nickel aluminium (AlNi).
In this way, comparing the first protective layer 22, the not corrosion vulnerable to the acidic materials in etching solution and rinsing bowl of conductive layer 26 ensure that the electric conductivity of film layer structure 100.Meanwhile aluminium, cost is relatively low for neodymium al and ni aluminium, effectively reduces the processing cost of film layer structure 100, aluminium, the stability of neodymium al and ni aluminium are also higher, and the stabilization of electric conductivity can be kept when film layer structure 100 is in hot environment.
In some embodiments, the material of the first protective layer 22 includes molybdenum (Mo).
In this way, large-scale production is realized in 100 lower production costs of film layer structure that the first protective layer 22 is formed, high stability, application easy to spread.Meanwhile in film layer structure 100 shown in Fig. 1, the first protective layer 22 of molybdenum
It can realize that the electric action of film layer structure 100 is easily mounted on display panel in this way, the thickness of film layer structure 100 is smaller separately as conductive layer, alleviate the integral thickness and weight of display panel.
In some embodiments, the material of the second protective layer 24 is identical with the material of conductive layer 26 or not identical.
When the material of the second protective layer 24 is identical with the material of conductive layer 26; it is identical with the technique of conductive layer 26 is formed to form the second protective layer 24; all use the technique of sputter coating; so; during manufacturing film layer structure 100; the program for reducing more conversion materials improves the production efficiency of film layer structure 100.Meanwhile it also reducing film layer structure 100 and producing required cost.It is upper more flexible in the material selection of film layer structure 100 in this way when the material of the material of the second protective layer 24 and conductive layer 26 is not identical.
Specifically, in the present embodiment, the material of the second protective layer 24 is selected from the one of which in aluminium, neodymium aluminium, nickel aluminium, titanium (Ti) and tin indium oxide (ITO).One of which of the material of conductive layer 26 in aluminium, neodymium al and ni aluminium.
Referring to Fig. 3, in some embodiments, film layer body 20 includes the first conductive layer 28 and the second conductive layer 21, and the first conductive layer 28 and the second conductive layer 21 are located between substrate 10 and the first protective layer 22, and 28 to the second conductive layer of the first conductive layer is closer to substrate 10.
In this way, the electric conductivity of film layer structure 100 is enhanced.Simultaneously; film layer structure 100 forms multilayered structure; first conductive layer 28 and the second conductive layer 21 are between the first protective layer 22 and substrate 10; double protective layer structures that first protective layer 22 and the second protective layer 24 are formed further protect the first conductive layer 28 and the second conductive layer 21; to guarantee that 100 performance of film layer structure is stablized, the service life of film layer structure 100 is also extended.
Specifically, in one example, the technique for forming the first conductive layer 28 and the second conductive layer 21 is magnetron sputtering membrane process.
It please join Fig. 3, in some embodiments, the first conductive layer 28 includes molybdenum.
In some embodiments, one of which of second conductive layer 21 in aluminium, neodymium al and ni aluminium.
Since molybdenum is easier to be corroded compared to aluminium, neodymium al and ni aluminium, so being arranged in the first conductive layer 28 near the position of substrate 10, the first conductive layer 28 is preferably protected.
In some embodiments, the first conductive layer 28 is not identical or identical with the material of the first protective layer 22.
When the material of the first conductive layer 28 is identical with the material of the first protective layer 22; it is identical with the technique of the first protective layer 22 is formed to form the first conductive layer 28; all use the technique of sputter coating; so; during manufacturing film layer structure 100; the program for reducing more conversion materials improves the production efficiency of film layer structure 100.Meanwhile it also reducing film layer structure 100 and producing required cost.It is upper more flexible in the material selection of film layer structure 100 in this way when the material of the material of the first conductive layer 28 and the first protective layer 22 is not identical.
Specifically, in the present embodiment, the material of the first conductive layer 28 and the first protective layer 22 is molybdenum.
In some embodiments, the second conductive layer 21 is not identical or identical with the material of the second protective layer 24.
When the second conductive layer 21 is identical with the material of the second protective layer 24; it is identical with the technique of the second conductive layer 21 is formed to form the second protective layer 24; all use the technique of sputter coating; so; during manufacturing film layer structure 100; the program for reducing more conversion materials improves the production efficiency of film layer structure 100.Meanwhile it also reducing film layer structure 100 and producing required cost.It is upper more flexible in the material selection of film layer structure 100 in this way when the material of the material of the second protective layer 24 and the second conductive layer 21 is not identical.
Specifically, in the present embodiment, the material of the second protective layer 24 is selected from the one of which in aluminium, neodymium aluminium, nickel aluminium, titanium (Ti) and tin indium oxide (ITO).One of which of the material of second conductive layer 21 in aluminium, neodymium al and ni aluminium.
In some embodiments, the second protective layer 24 with a thickness of 10-50 nanometers.For example, the second protective layer 24 with a thickness of 10 nanometers, 12 nanometers, 30 nanometers, 33 nanometers, 45.5 nanometers or 50 nanometers, be not particularly limited herein.
In this way, the thickness for being located at outermost second protective layer 24 of film layer structure 100 is moderate, the waste of material is avoided.
Specifically, the main function of the second protective layer 24 be prevent the first protective layer 22 detraction, therefore, the second protective layer 24 it is relatively mild with a thickness of 10-50 nanometers.
The display panel of embodiment of the present invention, the film layer structure 100 including protective layer and any embodiment as above, protective layer cover layer structure 100.
In the display panel of embodiment of the present invention; second protective layer 24 can protect the first protective layer 22 to avoid by etching corrosion; and then the detraction of the first protective layer 22 can be prevented; simultaneously; first protective layer 22 and the second protective layer 24 form double protection structures; the other layers for avoiding film layer structure 100 are corroded, to ensure that the quality of display panel.
Specifically, in display panel, protective layer avoids external substance and enters in film layer structure 100, influences the electric conductivity of film layer structure 100.In one example, the material of protective layer is silica, and certainly, the material of protective layer is not limited to silica, is not particularly limited herein.
In the description of this specification, the description of reference term " embodiment ", " certain embodiments ", " exemplary embodiment ", " example ", " specific example " or " some examples " etc. means to be contained at least one embodiment or example of the invention in conjunction with the embodiment or example particular features, structures, materials, or characteristics described.In the present specification, schematic expression of the above terms are not necessarily referring to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be combined in any suitable manner in any one or more embodiments or example.
While embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that: do not taking off
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where from the principle of the present invention and objective, the scope of the present invention is defined by the claims and their equivalents.
Claims (13)
- A kind of film layer structure; it is characterized in that; including substrate and multiple film layer bodies; the multiple film layer body is arranged at intervals in the substrate; the film layer body includes the first protective layer and the second protective layer; first protective layer is formed on the substrate, and second protective layer is formed on first protective layer.
- Film layer structure as described in claim 1, which is characterized in that the film layer body includes conductive layer, and the conductive layer is between the substrate and first protective layer.
- Film layer structure as claimed in claim 2, which is characterized in that one of which of the conductive layer in aluminium, neodymium al and ni aluminium.
- Film layer structure as described in any one of claims 1-3, which is characterized in that the material of first protective layer includes molybdenum.
- Film layer structure as claimed in claim 2, which is characterized in that the material of second protective layer is identical with the material of the conductive layer or not identical.
- Film layer structure as described in claim 1; it is characterized in that; the film layer body includes the first conductive layer and the second conductive layer; first conductive layer and second conductive layer are between the substrate and first protective layer, and first conductive layer is than second conductive layer closer to the substrate.
- Film layer structure as claimed in claim 6, which is characterized in that first conductive layer includes molybdenum.
- Film layer structure as claimed in claim 6, which is characterized in that one of which of second conductive layer in aluminium, neodymium al and ni aluminium.
- Film layer structure as claimed in claim 6, which is characterized in that first conductive layer is not identical or identical with the material of first protective layer.
- Film layer structure as claimed in claim 6, which is characterized in that second conductive layer is not identical or identical with the material of second protective layer.
- Film layer structure as described in claim 1, which is characterized in that second protective layer with a thickness of 10-50 nanometers.
- Film layer structure as described in claim 1, which is characterized in that one of which of the material of second protective layer in aluminium, neodymium aluminium, nickel aluminium, titanium and tin indium oxide.
- A kind of display panel, which is characterized in that including protective layer and the described in any item film layer structures of claim 1-12, the protective layer covers the film layer structure.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/097562 WO2019033283A1 (en) | 2017-08-15 | 2017-08-15 | Film layer structure and display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109791933A true CN109791933A (en) | 2019-05-21 |
Family
ID=65361726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780058783.0A Pending CN109791933A (en) | 2017-08-15 | 2017-08-15 | Film layer structure and display panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109791933A (en) |
| WO (1) | WO2019033283A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040263058A1 (en) * | 2003-06-30 | 2004-12-30 | Wu Chao Chin | Display panel, electrode panel and electrode substrate thereof |
| CN106028486A (en) * | 2016-05-17 | 2016-10-12 | 上海科比斯光学科技有限公司 | Composite conductive film and preparation method and application thereof |
| CN106201042A (en) * | 2015-05-08 | 2016-12-07 | 群创光电股份有限公司 | Contact panel and application thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1883936A (en) * | 2005-06-24 | 2006-12-27 | 悠景科技股份有限公司 | Metal surface protective structure for preventing metal oxidation and method for making same |
| CN103531594B (en) * | 2013-10-30 | 2016-08-24 | 京东方科技集团股份有限公司 | A kind of array base palte and display device |
| TWI563429B (en) * | 2015-05-08 | 2016-12-21 | Innolux Corp | Touch pannel and applications thereof |
-
2017
- 2017-08-15 CN CN201780058783.0A patent/CN109791933A/en active Pending
- 2017-08-15 WO PCT/CN2017/097562 patent/WO2019033283A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040263058A1 (en) * | 2003-06-30 | 2004-12-30 | Wu Chao Chin | Display panel, electrode panel and electrode substrate thereof |
| CN106201042A (en) * | 2015-05-08 | 2016-12-07 | 群创光电股份有限公司 | Contact panel and application thereof |
| CN106028486A (en) * | 2016-05-17 | 2016-10-12 | 上海科比斯光学科技有限公司 | Composite conductive film and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019033283A1 (en) | 2019-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10915205B2 (en) | Touch panels and methods of manufacturing touch panels | |
| EP3093888B1 (en) | Method of fabricating a thin film transistor | |
| US8766097B2 (en) | Electrode, and electronic device comprising same | |
| JP2016519847A (en) | THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD, ARRAY SUBSTRATE, AND DISPLAY | |
| KR101790861B1 (en) | Copper-alloy barrier layers and capping layers for metallization in electronic devices | |
| JP2006113571A5 (en) | ||
| US20070096098A1 (en) | Conductive structure, manufacturing method for conductive structure, element substrate, and manufacturing method for element substrate | |
| US20160124545A1 (en) | Touch substrate and manufacturing method thereof, and touch display device | |
| US9356252B2 (en) | Electronic device and manufacturing method therefor | |
| JP2009224152A (en) | Transparent electrode, transparent conductive substrate, and transparent touch panel | |
| CN109791933A (en) | Film layer structure and display panel | |
| US20190196285A1 (en) | Manufacturing method of array substrate and its upper electrode line pattern and liquid crystal display panel | |
| CN107660279B (en) | Conductive structure and method for manufacturing same | |
| US9196734B2 (en) | Thin-film transistor substrate and method for fabricating the same, display | |
| JP5917480B2 (en) | Electrostatic sensor | |
| JP4920266B2 (en) | Method for manufacturing substrate having laminated structure | |
| US10304855B2 (en) | Display panel, touch display device and wire structure | |
| CN103165623A (en) | Thin film transistor base plate, preparation method thereof and displayer | |
| JP2007304512A (en) | Display apparatus and manufacturing method of the same | |
| US10749135B2 (en) | Electrode structure, electronic device comprising same and method for manufacturing same | |
| TWI467724B (en) | Conductive pattern for panel and manufacturing method thereof | |
| JP6494001B2 (en) | Transparent conductive substrate and transparent laminated structure | |
| US20130240995A1 (en) | Thin-film transistor array substrate and manufacturing method thereof | |
| JP2020522118A (en) | Conductive pattern structure and manufacturing method thereof, array substrate, and display device | |
| JPH09251161A (en) | Substrate for display element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190521 |