WO2019033283A1

WO2019033283A1 - Film layer structure and display panel

Info

Publication number: WO2019033283A1
Application number: PCT/CN2017/097562
Authority: WO
Inventors: 钱俊
Original assignee: 深圳市柔宇科技有限公司
Priority date: 2017-08-15
Filing date: 2017-08-15
Publication date: 2019-02-21
Also published as: CN109791933A

Abstract

Disclosed are a film layer structure (100) and a display panel. The film layer structure (100) comprises a substrate (10) and multiple film layer bodies (20), the multiple film layer bodies (20) being arranged at intervals on the substrate (10).The film layer body (20) comprises a first protective layer (22) and a second protective layer (24), the first protective layer (22) being formed on the substrate (10) and the second protective layer (24) being formed on the first protective layer (22).

Description

Film structure and display panel

Technical field

The present invention relates to the field of display technologies, and in particular, to a film layer structure and a display panel.

Background technique

In the related art, when the film layer structure in the display panel is subjected to wet etching, a protective layer is generally formed on the film layer structure to prevent a convex coating phenomenon in the main conductive film layer. However, when the film structure is processed after the wet etching, the protective layer is easily etched, resulting in a convex coating phenomenon of the main conductive film layer, which affects the film structure and the quality of the display panel.

Summary of the invention

A film layer structure and a display panel provided by an embodiment of the present invention.

A film layer structure provided by an embodiment of the present invention includes a substrate and a plurality of film layer bodies disposed on the substrate, the film layer body including a first protective layer and a second protective layer, The first protective layer is formed on the substrate, and the second protective layer is formed on the first protective layer.

In the film layer structure of the embodiment of the present invention, the second protective layer can protect the first protective layer from corrosion by the etching solution, thereby preventing damage of the first protective layer, and at the same time, the first protective layer and the second protective layer form double protection. The structure avoids corrosion of other layers of the film structure, thereby ensuring the quality of the film structure and the display panel.

In certain embodiments, the film layer body includes a conductive layer between the substrate and the first protective layer.

In certain embodiments, the conductive layer is selected from the group consisting of aluminum, aluminum telluride, and nickel aluminum nitride.

In some embodiments, the material of the first protective layer comprises molybdenum.

In some embodiments, the material of the second protective layer and the material of the conductive layer are the same or different.

In some embodiments, the film layer body includes a first conductive layer and a second conductive layer, the first conductive layer and the second conductive layer being located between the substrate and the first protective layer, The first conductive layer is closer to the substrate than the second conductive layer.

In certain embodiments, the first conductive layer comprises molybdenum.

In certain embodiments, the second conductive layer is selected from the group consisting of aluminum, aluminum telluride, and nickel aluminum nitride.

In some embodiments, the first conductive layer and the first protective layer are made of the same or different materials.

In some embodiments, the materials of the second conductive layer and the second protective layer are the same or different.

In certain embodiments, the second protective layer has a thickness of 10-50 nanometers.

In some embodiments, the material of the second protective layer is selected from the group consisting of aluminum, aluminum telluride, aluminum nickel, titanium, and indium tin oxide.

A display panel according to an embodiment of the present invention includes a protective layer and a film layer structure according to any of the above embodiments, the protective layer covering the film layer structure.

In the display panel of the embodiment of the invention, the second protective layer protects the first protective layer from corrosion by the etching solution, and at the same time, the first protective layer and the second protective layer form a double protective structure, thereby avoiding the conductive layer disposed on the substrate. Corrosion, thus ensuring the performance of the display panel.

Additional aspects and advantages of the embodiments of the invention will be set forth in part in the description.

DRAWINGS

The above and/or additional aspects and advantages of the present invention will become apparent and readily understood from

1 is a schematic structural view of a film layer structure according to an embodiment of the present invention;

2 is another schematic structural view of a film layer structure according to an embodiment of the present invention;

Fig. 3 is a schematic view showing still another structure of a film layer structure according to an embodiment of the present invention.

Detailed ways

The embodiments of the present invention are described in detail below, and the examples of the embodiments are illustrated in the drawings, wherein the same or similar reference numerals indicate the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the drawings are intended to be illustrative of the invention and are not to be construed as limiting.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientations of "post", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, and is merely for the convenience of the description of the present invention and the simplified description, and is not intended to indicate or imply that the device or component referred to has a specific orientation, and is constructed and operated in a specific orientation. Therefore, it should not be construed as limiting the invention. Moreover, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first" or "second" may include one or more of the described features either explicitly or implicitly. In the description of the present invention, the meaning of "plurality" is two or more, Unless otherwise specifically defined.

In the description of the present invention, it should be noted that the terms "installation", "connected", and "connected" are to be understood broadly, and may be fixed or detachable, for example, unless otherwise explicitly defined and defined. Connected, or integrally connected; may be mechanically connected, may be electrically connected or may communicate with each other; may be directly connected, or may be indirectly connected through an intermediate medium, may be internal communication of two elements or interaction of two elements relationship. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood on a case-by-case basis.

In the description of the present invention, the first feature "on" or "under" the second feature may include direct contact of the first and second features, and may also include first and The two features are not in direct contact but are contacted by additional features between them. Moreover, the first feature "above", "above" and "above" the second feature includes the first feature directly above and above the second feature, or merely indicating that the first feature level is higher than the second feature. The first feature "below", "below" and "below" the second feature includes the first feature directly below and below the second feature, or merely the first feature level being less than the second feature.

The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and arrangements of the specific examples are described below. Of course, they are merely examples and are not intended to limit the invention. In addition, the present invention may be repeated with reference to the numerals and/or reference numerals in the various examples, which are for the purpose of simplicity and clarity, and do not indicate the relationship between the various embodiments and/or arrangements discussed. Moreover, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the use of other processes and/or the use of other materials.

Referring to FIG. 1 - FIG. 3 , a film layer structure 100 according to an embodiment of the present invention includes a substrate 10 and a plurality of film layer bodies 20 , and a plurality of film layer bodies 20 are disposed on the substrate 10 . The film layer body 20 includes a first protective layer 22 formed on the substrate 10 and a second protective layer 24 formed on the first protective layer 22.

In the film layer structure 100 of the embodiment of the present invention, the second protective layer 24 can protect the first protective layer 22 from being corroded by the etching solution, thereby preventing damage of the first protective layer 22, and at the same time, the first protective layer 22 and the second layer The protective layer 24 forms a double protective structure, which avoids corrosion of other layers of the film structure 100, thereby ensuring the quality of the film structure 100 and the display panel.

Specifically, in the conventional manufacturing process of the film layer structure 100, a layer of material is generally used as the main conductive film layer, but the main conductive film layer is easily corroded, resulting in a convex hull phenomenon. To solve this problem, a protective layer is generally plated on the main conductive film layer. However, in the manufacturing process of the film structure 100, a wet etching process is required. In the wet etching process, a portion of the surface of the film layer structure 100 needs to be covered with a photoresist, and then the etching is performed. The engraving etches the region of the film structure 100 that is not covered with the photoresist, and after the wet etching process is completed, the etching solution on the surface of the film structure 100 is scraped off with a wind knife. However, the pressure requirement of the air knife is large, causing the photoresist on the film structure 100 to form a gap, exposing the protective layer. When the film structure 100 is placed in a water washing tank for cleaning, the acidic substance in the water washing tank quickly erodes the protective layer, thereby corroding the main conductive layer. As such, the film structure 100 still exhibits a convex hull phenomenon, which affects the electrical conductivity of the film structure 100.

In the film layer structure 100 in the embodiment of the present invention, the first protective layer 22 may be a metal material, and is more resistant to corrosion of the acidic substances in the etching liquid and the water washing tank than the material used in the main conductive layer in the conventional process. The corrosion protection ability of the second protective layer 24 is stronger than that of the first protective layer 22. Thus, when the etching liquid on the surface of the film structure 100 is cleaned using an air knife, even if the photoresist on the surface of the film structure 100 is notched, the second protective layer 24 is not corroded, and the first protection is better. Protective layer 22.

In some examples, substrate 10 can be a rigid insulating material such as quartz glass.

In some embodiments, referring to FIG. 2, the film layer body 20 includes a conductive layer 26 between the substrate 10 and the first protective layer 22.

As such, since the second protective layer 24 is corroded at a slower rate than the first protective layer 22, the first protective layer 22 is better protected, and the conductive layer 26 is less likely to be corroded, and the conductive property of the film structure 100 is improved. Guaranteed.

Specifically, the process of attaching the second protective layer 24 to the first protective layer 22 and attaching the first protective layer 22 and the conductive layer 26 together may be a magnetron sputtering process. The magnetron sputtering process is a kind of physical vapor deposition, which has the characteristics of simple equipment, easy control, large coating area and strong adhesion of the film layer. The conductive layer 26, the first protective layer 22 and the first layer formed by the magnetron sputtering process are used. The adhesion between the two protective layers 24 is large, and the film structure 100 is also relatively stable.

The film structure 100 shown in FIG. 1 and FIG. 2 can be applied to a gate structure (GE layer) of a display panel, and the film layer structure 100 shown in FIG. 3 can be applied to a source structure and a drain structure of a display panel (SD). Layer), in this way, the gate structure, the source structure and the drain structure together form a field effect transistor, and the conduction of the circuit in the display panel is realized.

In certain embodiments, the conductive layer 26 is selected from one of aluminum (Al), aluminum telluride (AlNd), and aluminum nickel (AlNi).

As such, the conductive layer 26 is less susceptible to corrosion by the etchant and the acidic material in the water bath than the first protective layer 22, ensuring the conductive properties of the film structure 100. At the same time, the cost of aluminum, aluminum telluride and nickel aluminum is relatively low, which effectively reduces the processing cost of the film structure 100, and the stability of aluminum, aluminum telluride and nickel aluminum is also high, and can be in the film structure 100 Maintain stable electrical conductivity in high temperature environments.

In some embodiments, the material of the first protective layer 22 includes molybdenum (Mo).

As such, the film structure 100 formed by the first protective layer 22 has lower production cost, higher stability, is easy to popularize and apply, and realizes mass production. Meanwhile, in the film structure 100 shown in FIG. 1, the first protective layer 22 of molybdenum is also The conductive function of the film structure 100 can be realized as a conductive layer alone. Thus, the film structure 100 has a small thickness and is easy to be mounted on the display panel, thereby reducing the overall thickness and weight of the display panel.

In some embodiments, the material of the second protective layer 24 and the material of the conductive layer 26 are the same or different.

When the material of the second protective layer 24 and the material of the conductive layer 26 are the same, the process of forming the second protective layer 24 and forming the conductive layer 26 is the same, and the process of sputter coating is employed, and thus, the process of manufacturing the film structure 100 is performed. In the process of replacing the material, the production efficiency of the film structure 100 is improved. At the same time, the cost required for the production of the film structure 100 is also reduced. When the material of the second protective layer 24 and the material of the conductive layer 26 are different, the material selection of the film layer structure 100 is more flexible.

Specifically, in the present embodiment, the material of the second protective layer 24 is selected from one of aluminum, aluminum telluride, aluminum nickel, titanium (Ti), and indium tin oxide (ITO). The material of the conductive layer 26 is selected from one of aluminum, aluminum telluride, and nickel aluminum nitride.

Referring to FIG. 3, in some embodiments, the film layer body 20 includes a first conductive layer 28 and a second conductive layer 21, and the first conductive layer 28 and the second conductive layer 21 are located on the substrate 10 and the first protective layer 22. The first conductive layer 28 is closer to the substrate 10 than the second conductive layer.

As such, the electrical conductivity of the film structure 100 is enhanced. At the same time, the film structure 100 forms a multilayer structure, the first conductive layer 28 and the second conductive layer 21 are located between the first protective layer 22 and the substrate 10, and the first protective layer 22 and the second protective layer 24 form a double protective layer. The structure further protects the first conductive layer 28 and the second conductive layer 21, thereby ensuring stable performance of the film structure 100 and prolonging the service life of the film structure 100.

Specifically, in one example, the process of forming the first conductive layer 28 and the second conductive layer 21 is a magnetron sputtering coating process.

Referring to FIG. 3, in some embodiments, the first conductive layer 28 comprises molybdenum.

In some embodiments, the second conductive layer 21 is selected from one of aluminum, aluminum telluride, and nickel aluminum nitride.

Since molybdenum is more susceptible to corrosion than aluminum, aluminum telluride, and nickel aluminum, the first conductive layer 28 is disposed closest to the substrate 10, better protecting the first conductive layer 28.

In some embodiments, the materials of the first conductive layer 28 and the first protective layer 22 are the same or different.

When the material of the first conductive layer 28 and the material of the first protective layer 22 are the same, the process of forming the first conductive layer 28 and forming the first protective layer 22 is the same, and the process of sputter coating is used, so that the film layer is formed. In the process of the structure 100, the procedure for replacing the material is reduced, and the production efficiency of the film structure 100 is improved. At the same time, the cost required for the production of the film structure 100 is also reduced. When the material of the first conductive layer 28 and the material of the first protective layer 22 are different, the material selection of the film layer structure 100 is more flexible.

Specifically, in the present embodiment, the material of the first conductive layer 28 and the first protective layer 22 is molybdenum.

In some embodiments, the materials of the second conductive layer 21 and the second protective layer 24 are the same or different.

When the materials of the second conductive layer 21 and the second protective layer 24 are the same, the process of forming the second protective layer 24 and forming the second conductive layer 21 is the same, and the process of sputter coating is employed, and thus, the film layer structure 100 is manufactured. In the process, the procedure for replacing the material is reduced, and the production efficiency of the film structure 100 is improved. At the same time, the cost required for the production of the film structure 100 is also reduced. When the material of the second protective layer 24 and the material of the second conductive layer 21 are different, the material selection of the film layer structure 100 is more flexible.

Specifically, in the present embodiment, the material of the second protective layer 24 is selected from one of aluminum, aluminum telluride, aluminum nickel, titanium (Ti), and indium tin oxide (ITO). The material of the second conductive layer 21 is selected from one of aluminum, aluminum telluride, and nickel aluminum nitride.

In some embodiments, the second protective layer 24 has a thickness of 10-50 nanometers. For example, the thickness of the second protective layer 24 is 10 nm, 12 nm, 30 nm, 33 nm, 45.5 nm, or 50 nm, and is not specifically limited herein.

As such, the thickness of the second protective layer 24 located at the outermost layer of the film layer structure 100 is moderate, avoiding waste of materials.

Specifically, the main function of the second protective layer 24 is to prevent the damage of the first protective layer 22, and therefore, the thickness of the second protective layer 24 is relatively moderate from 10 to 50 nm.

A display panel according to an embodiment of the present invention includes a protective layer and a film layer structure 100 of any of the above embodiments, and the protective layer covers the film layer structure 100.

In the display panel of the embodiment of the invention, the second protective layer 24 can protect the first protective layer 22 from corrosion by the etching solution, thereby preventing damage of the first protective layer 22, and at the same time, the first protective layer 22 and the second protective layer 24 forms a double protection structure, which avoids corrosion of other layers of the film structure 100, thereby ensuring the quality of the display panel.

Specifically, in the display panel, the protective layer prevents foreign matter from entering the film structure 100 and affects the conductive properties of the film structure 100. In one example, the material of the protective layer is silicon dioxide. Of course, the material of the protective layer is not limited to silicon dioxide, and is not specifically limited herein.

In the description of the present specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiment", "example", "specific example", or "some examples", etc. The specific features, structures, materials or characteristics described in the embodiments or examples are included in at least one embodiment or example of the invention. In the present specification, the schematic representation of the above terms does not necessarily mean the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.

Although the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that A variety of changes, modifications, substitutions and variations of the embodiments of the invention are possible in the light of the scope of the invention. The scope of the invention is defined by the claims and their equivalents.

Claims

A film layer structure comprising: a substrate and a plurality of film layer bodies, the plurality of film layer bodies being spaced apart on the substrate, the film layer body comprising a first protective layer and a second protective layer, The first protective layer is formed on the substrate, and the second protective layer is formed on the first protective layer.
The film layer structure of claim 1 wherein said film layer body comprises a conductive layer, said conductive layer being between said substrate and said first protective layer.
The film layer structure according to claim 2, wherein the conductive layer is one selected from the group consisting of aluminum, aluminum telluride, and nickel aluminum nitride.
The film layer structure according to any one of claims 1 to 3, wherein the material of the first protective layer comprises molybdenum.
The film layer structure according to claim 2, wherein the material of the second protective layer and the material of the conductive layer are the same or different.
The film layer structure according to claim 1, wherein said film layer body comprises a first conductive layer and a second conductive layer, and said first conductive layer and said second conductive layer are located at said substrate and said Between the first protective layers, the first conductive layer is closer to the substrate than the second conductive layer.
The film layer structure of claim 6 wherein said first conductive layer comprises molybdenum.
The film layer structure according to claim 6, wherein the second conductive layer is selected from the group consisting of aluminum, aluminum telluride, and nickel aluminum nitride.
The film layer structure according to claim 6, wherein materials of said first conductive layer and said first protective layer are the same or different.
The film layer structure according to claim 6, wherein materials of said second conductive layer and said second protective layer are the same or different.
The film layer structure according to claim 1, wherein the second protective layer has a thickness of 10 to 50 nm.
The film layer structure according to claim 1, wherein the material of the second protective layer is selected from the group consisting of aluminum, aluminum telluride, aluminum nickel, titanium, and indium tin oxide.
A display panel comprising a protective layer and the film layer structure according to any one of claims 1 to 12, the protective layer covering the film layer structure.