CN109786454A - A kind of HEMT epitaxial structure and preparation method thereof - Google Patents
A kind of HEMT epitaxial structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of HEMT epitaxial structures and preparation method thereof, belong to semiconductor light electro-technical field.Multiple tapered protrusions that AlGaN buffer layer is set as including AlGaN fabric and is arranged on AlGaN fabric, GaN layer is grown on AlGaN fabric, the presence of multiple tapered protrusions, make GaN layer on AlGaN fabric gradually to far from substrate first surface direction longitudinal growth when, GaN layer simultaneously can be towards the direction cross growth of parallel first surface, the dislocation defects generated when the GaN layer longitudinal growth of part can be offseted with the dislocation defects generated when the GaN layer cross growth of part, improve the growth quality of GaN layer.And GaN layer is in cross growth, the defects of dislocation inside GaN layer, can also be moved to the side wall of GaN layer along the direction of parallel first surface, the dislocation defects for being moved to the interface of GaN layer and AlGaN potential barrier can be reduced, the quality of finally obtained HEMT can be further increased with the surface quality of AlGaN potential barrier joint by improving GaN layer.
Description
Technical field
The present invention relates to semiconductor light electro-technical field, in particular to a kind of HEMT epitaxial structure and preparation method thereof.
Background technique
HEMT (High Electron Mobility Transistor, high electron mobility transistor) is a kind of heterogeneous
Junction field effect transistor is widely used in various electric appliances.HEMT epitaxial structure is the basis for preparing HEMT device, when previous
Kind of HEMT epitaxial structure includes substrate and stack gradually AlN nucleating layer, AlGaN buffer layer, GaN layer, AlGaN gesture on substrate
Barrier layer and GaN cap rock, wherein substrate can be silicon carbide substrates, Sapphire Substrate or monocrystalline substrate.
But it is lost due to there is biggish lattice between GaN layer and silicon carbide substrates, Sapphire Substrate or monocrystalline substrate
Match, even if thering is AlN nucleating layer and AlGaN buffer layer to play buffer function between substrate and GaN layer, what final growth obtained
The crystal quality of GaN layer is also not good enough, and then influences the quality of HEMT.
Summary of the invention
The embodiment of the invention provides a kind of HEMT epitaxial structures and preparation method thereof, can be improved the quality of HEMT.Institute
It is as follows to state technical solution:
The embodiment of the invention provides a kind of HEMT epitaxial structure, the HEMT epitaxial structure includes substrate and stacks gradually
AlN nucleating layer, AlGaN buffer layer, GaN layer, AlGaN potential barrier and GaN cap rock over the substrate is set,
The AlGaN buffer layer includes AlGaN fabric and multiple tapers for being arranged on the AlGaN fabric
Protrusion, the multiple tapered protrusion are evenly arranged on the AlGaN fabric, and the one of the AlN nucleating layer is laminated in the substrate
A surface is first surface, and the projection of the multiple tapered protrusion on the first surface is not overlapped.
Optionally, in the projection of two adjacent tapered protrusions on the first surface the nearest two o'clock of distance it
Between distance be 150~550nm.
Optionally, in the projection of each tapered protrusion on the first surface between the two o'clock of spaced furthest away from
From being 100~500nm.
Optionally, the height of the tapered protrusion is 100~500nm.
Optionally, the AlGaN fabric with a thickness of 100~800nm.
Optionally, the group of the Al in the AlGaN buffer layer is divided into 10~40%.
The embodiment of the invention provides a kind of preparation method of HEMT epitaxial structure, the preparation method includes:
One substrate is provided；
Growing AIN nucleating layer over the substrate；
AlGaN buffer layer is grown on the AlN nucleating layer,
Lithography operations are carried out to the AlGaN buffer layer, so that the surface of the AlGaN buffer layer is formed multiple tapers convex
It rises；
GaN layer is grown on the AlGaN buffer layer；
AlGaN potential barrier is grown in the GaN layer；
GaN cap rock is grown in the AlGaN potential barrier.
Optionally, described to include: to AlGaN buffer layer progress lithography operations
A layer photoresist is coated on the AlGaN buffer layer；
Development is exposed to the photoresist, forms pattern on a photoresist, the pattern is multiple uniformly distributed cylinders
Shape pattern；
The part that photoresist is not covered on the AlGaN buffer layer is performed etching；
Remove the photoresist on the AlGaN buffer layer.
Optionally, using SF6, Ar, O2The AlGaN buffer layer is performed etching, the flow of the SF6 in reaction chamber is passed through
The O that flow for 50~500sccm, the Ar being passed through in reaction chamber is 1~50sccm, is passed through in reaction chamber2Flow be 1~
50sccm。
Optionally, when growing AlGaN buffer layer on the AlN nucleating layer, it is passed through 10~500sccm's into reaction chamber
The source Al.
Technical solution provided in an embodiment of the present invention have the benefit that set AlGaN buffer layer to include
AlGaN fabric and the multiple tapered protrusions being arranged on AlGaN fabric, GaN layer can be enterprising in AlGaN fabric
The good growth of row.And due to the presence of multiple tapered protrusions, GaN layer is on AlGaN fabric gradually to the far from substrate
When the direction longitudinal growth on one surface, GaN layer can be simultaneously towards the direction cross growth of parallel first surface.GaN layer is in longitudinal direction
When growth is with cross growth, the dislocation defects of different directions can be generated in GaN layer, the part that when GaN layer longitudinal growth generates
Dislocation defects can be offseted with the partial dislocation defect generated when GaN layer cross growth, and the crystalline substance of GaN layer can be improved in the reduction of defect
Weight improves the quality of finally obtained HEMT.And the position that only GaN layer of longitudinal growth is generated in growth in conventional method
It is wrong to influence the quality of the AlGaN potential barrier grown in GaN layer towards the movement of the interface of GaN layer and AlGaN potential barrier.
And the dislocation defects that GaN layer is generated in cross growth can be moved to along the direction of parallel first surface the side wall of GaN layer without
It is the interface of GaN layer and AlGaN potential barrier.Relatively reduce the dislocation for being moved to the interface of GaN layer and AlGaN potential barrier
Defect improves the surface quality of GaN layer Yu AlGaN potential barrier joint, the quality of the AlGaN potential barrier grown in GaN layer
Preferably, the quality of finally obtained HEMT is improved.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of HEMT epitaxial structure provided in an embodiment of the present invention；
Fig. 2 is the perspective view of tapered protrusion provided in an embodiment of the present invention on substrate；
Fig. 3 is a kind of preparation method flow chart of HEMT epitaxial structure provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structural schematic diagram of HEMT epitaxial structure provided in an embodiment of the present invention, as shown in Figure 1, the HEMT
Epitaxial structure include substrate 1 and the AlN nucleating layer 2 being cascading on substrate 1, AlGaN buffer layer 3, GaN layer 4,
AlGaN potential barrier 5 and GaN cap rock 6.
AlGaN buffer layer 3 includes that AlGaN fabric 31 and multiple tapers for being arranged on AlGaN fabric 31 are convex
32 are played, multiple tapered protrusions 32 are evenly arranged on AlGaN fabric 31, and the surface that AlN nucleating layer 2 is laminated in substrate 1 is the
One surface 11, projection 321 of multiple tapered protrusions 32 on first surface 11 are not overlapped.
By AlGaN buffer layer 3 be set as include AlGaN fabric 31 and be arranged in it is more on AlGaN fabric 31
A tapered protrusion 32, GaN layer 4 can well be grown on AlGaN fabric 31.And depositing due to multiple tapered protrusions 32
, GaN layer 4 on AlGaN fabric 31 gradually to when the direction longitudinal growth of the first surface 11 far from substrate 1, GaN layer
4 can be simultaneously towards the direction cross growth of parallel first surface 11.GaN layer 4, can be in GaN in longitudinal growth and cross growth
The dislocation defects of different directions are generated in layer 4, the partial dislocation defect that when 4 longitudinal growth of GaN layer generates can be with GaN layer 4 laterally
The partial dislocation defect generated when growth offsets, and the crystal quality of GaN layer 4 can be improved in the reduction of defect, and raising finally obtains
HEMT quality.And in conventional method only longitudinal growth GaN layer 4 in growth the dislocation that generates can towards GaN layer 4 with
The interface of AlGaN potential barrier 5 is mobile, influences the quality of AlGaN potential barrier 5 grown in GaN layer 4.And GaN layer 4 is in transverse direction
The dislocation defects generated when growth the side wall of GaN layer 4 can be moved to along the direction of parallel first surface 11 rather than GaN layer 4 with
The interface of AlGaN potential barrier 5.The dislocation defects for being moved to the interface of GaN layer 4 and AlGaN potential barrier 5 are relatively reduced,
Improve the surface quality of GaN layer 4 meeting and 5 joint of AlGaN potential barrier, the quality of the AlGaN potential barrier 5 grown in GaN layer 4
Preferably, it is improved the quality of finally obtained HEMT.
Optionally, the component of the Al in AlGaN buffer layer 3 can be 10~40%.The component of Al in AlGaN buffer layer 3
When in the above range, the crystal quality of AlGaN buffer layer 3 itself is preferable, can also preferably play buffering substrate and GaN layer it
Between lattice mismatch effect.
In a kind of situation provided in an embodiment of the present invention, the component of the Al in AlGaN buffer layer 3 can be 25%.It obtains
HEMT epitaxial structure quality it is preferable.
Optionally, the overall thickness of AlGaN buffer layer 3 can be 200~1000nm, and the HEMT epitaxial structure obtained at this time is whole
Crystal quality it is preferable.
In a kind of situation provided in an embodiment of the present invention, the thickness of AlGaN buffer layer 3 can be 800nm.Obtained HEMT
The quality of epitaxial structure is preferable.
Illustratively, the thickness of AlGaN fabric 31 can be 100~800nm.The thickness of AlGaN fabric 31 is set
It sets in this range, it is ensured that the quality of the GaN layer 4 grown on AlGaN fabric 31.
In a kind of situation provided in an embodiment of the present invention, the thickness of AlGaN fabric 31 can be 300nm.It obtains
The quality of HEMT epitaxial structure is preferable.
Optionally, the height of tapered protrusion 22 can be 100~500nm.The height setting of tapered protrusion 32 is within this range
When, the quality of the GaN layer 4 grown on AlGaN buffer layer 3 can be preferably improved, guarantees finally obtained HEMT epitaxial structure
Crystal quality.
Fig. 2 is the perspective view of tapered protrusion provided in an embodiment of the present invention on substrate, as shown in Fig. 2, adjacent
Distance L of two tapered protrusions 32 in the projection 321 on first surface 11 between the nearest two o'clock of distance be 150~
550nm.This set can control the distance between two adjacent tapered protrusions 32, preferably improve on AlGaN buffer layer 3
The quality of the GaN layer 4 of growth.
Optionally, the two o'clock of each tapered protrusion 32 spaced furthest in the projection 321 on the first surface 11 of substrate 1 it
Between distance D be 100~500nm.This structure is relatively easy to realize, also can preferably improve the matter of HEMT epitaxial structure
Amount.
Illustratively, in a kind of situation provided in an embodiment of the present invention, L can be 200nm, and D can be 150nm, and taper is convex
The height risen can be 250nm, and the quality of the HEMT epitaxial structure obtained at this time is preferable.
Illustratively, the thickness of GaN layer 4 can be 300~1000nm.It can guarantee and grow in GaN layer 4 and GaN layer 4 at this time
The quality of structure.
Fig. 3 is a kind of preparation method flow chart of HEMT epitaxial structure provided in an embodiment of the present invention, as shown in figure 3, should
Preparation method includes:
S1: a substrate is provided.
Wherein, substrate can be Sapphire Substrate or monocrystalline substrate.
S2: growing AIN nucleating layer on substrate.
Wherein, the growth temperature of AlN nucleating layer can be 1000~1200 DEG C, the growth pressure of AlN nucleating layer can for 100~
500Torr.The preferable AlN nucleating layer of quality can be obtained with this condition.
Optionally, the growth thickness of AlN nucleating layer can be 50~400nm.It can guarantee and grow on AlN nucleating layer
The quality of AlGaN buffer layer.
S3: growing AlGaN buffer layer on AlN nucleating layer,
Optionally, when growing AlGaN buffer layer on AlN nucleating layer, the source Al of 10~50sccm is passed through into reaction chamber.
The quality of obtained AlGaN buffer layer is preferable, guarantees the quality of the epitaxial structure grown on AlGaN buffer layer.
In step S3, the growth temperature of AlGaN buffer layer can be 1000~1200 DEG C, the growth pressure of AlGaN buffer layer
It can be 100~500Torr.
Optionally, the growth thickness of AlGaN buffer layer can be 200~1000nm, and the HEMT epitaxial structure obtained at this time is whole
The crystal quality of body is preferable.
S4: lithography operations are carried out to AlGaN buffer layer, the surface of AlGaN buffer layer is made to form multiple tapered protrusions.
Step S4 can include:
A layer photoresist is coated on AlGaN buffer layer.
Development is exposed to photoresist, forms pattern on a photoresist, pattern is multiple uniformly distributed cylindrical patterns.
The part that photoresist is not covered on AlGaN buffer layer is performed etching.
Remove the photoresist on AlGaN buffer layer.This operation is relatively easy to realize, it is more regular also to obtain shape
Tapered protrusion, and then guarantee the quality of the GaN layer grown on AlGaN buffer layer.
Optionally, ICP (English: inductively coupled plasma, Chinese: inductively coupled plasma) can be passed through
Lithographic technique performs etching AlGaN buffer layer, and AlGaN buffer layer is performed etching and can be carved by ICP using ICP lithographic technique
Erosion machine realize, using ICP lithographic technique to AlGaN buffer layer perform etching can more accurately to AlGaN buffer layer etching shape
Shape is controlled.
Illustratively, ICP dry etching technology can be used to perform etching AlGaN buffer layer, and use SF6, Ar, O2It is right
The AlGaN buffer layer performs etching, and the flow of the SF6 being passed through in reaction chamber is 50~500sccm, the Ar being passed through in reaction chamber
Flow be 1~50sccm, the O that is passed through in reaction chamber2Flow be 1~50sccm.The AlGaN obtained in the above conditions is slow
The surface quality for rushing layer is preferable.
When etching AlGaN buffer layer, etching gas is ionized to obtain plasma ICP etching machine, and plasma is in ICP
The surface not being covered by photoresist on AlGaN buffer layer is acted under the action of etching machine, gradually in AlGaN buffer layer
On etch shrinkage pool, it is recessed and since the directly vertical first surface of most of plasma acts on AlGaN buffer layer
The mistake that is oppositely extending, and gradually being etched to first surface direction in plasma of the direction of growth of Kong Huixiang AlGaN buffer layer
Cheng Zhong, the plasma for directly bombarding the side wall of shrinkage pool can gradually use up reduction, and in shrinkage pool during extension, shrinkage pool is hanging down
Sectional area on its straight depth direction can be gradually reduced, and then obtain more regular tapered protrusion.
After the photoresist on removing AlGaN buffer layer, substrate is cleaned using cleaning agent.
S5: GaN layer is grown on AlGaN buffer layer.
Wherein, the growth temperature of GaN layer can be 1000~1100 DEG C, and the growth pressure of GaN layer can be 100~400Torr.
The preferable GaN layer of quality can be obtained with this condition.
Optionally, the growth thickness of GaN layer can be 300~1000nm.It can guarantee the AlGaN buffering grown in GaN layer
The quality of layer.
S6: AlGaN potential barrier is grown in GaN layer.
Wherein, the growth temperature of AlGaN potential barrier can be 1000~1200 DEG C, and the growth pressure of AlGaN potential barrier can be
100~500Torr.The preferable AlGaN potential barrier of quality can be obtained with this condition.
Optionally, the growth thickness of AlGaN potential barrier can be 5~50nm.It can guarantee and grow in AlGaN potential barrier
The quality of AlGaN buffer layer.
S7: GaN cap rock is grown in AlGaN potential barrier.
Wherein, the growth temperature of GaN cap rock can be 1000~1100 DEG C, the growth pressure of GaN cap rock can for 100~
400Torr.The preferable GaN cap rock of quality can be obtained with this condition.
Optionally, the growth thickness of GaN cap rock can be 1~20nm.It can guarantee the AlGaN buffering grown on GaN cap rock
The quality of cap rock.
Multiple tapers that AlGaN buffer layer is set as including AlGaN fabric and is arranged on AlGaN fabric
Protrusion, GaN layer can well be grown on AlGaN fabric.And due to the presence of multiple tapered protrusions, GaN layer exists
Gradually to when the direction longitudinal growth of the first surface far from substrate on AlGaN fabric, GaN layer can be simultaneously towards parallel the
The direction cross growth on one surface.GaN layer can generate the position of different directions in longitudinal growth and cross growth in GaN layer
Wrong defect, the partial dislocation defect that when GaN layer longitudinal growth generates can be with the partial dislocation defects that generate when GaN layer cross growth
It offsets, the crystal quality of GaN layer can be improved in the reduction of defect, improves the quality of finally obtained HEMT.And in conventional method
The dislocation that only GaN layer of longitudinal growth is generated in growth can be towards the movement of the interface of GaN layer and AlGaN potential barrier, shadow
Ring the quality of the AlGaN potential barrier grown in GaN layer.And the dislocation defects that GaN layer is generated in cross growth can be along parallel
The direction on one surface is moved to the side wall of GaN layer rather than the interface of GaN layer and AlGaN potential barrier.Relatively reduce movement
To the dislocation defects of the interface of GaN layer and AlGaN potential barrier, the surface matter of GaN layer Yu AlGaN potential barrier joint is improved
It measures, the quality of the AlGaN potential barrier grown in GaN layer is preferable, and the quality of finally obtained HEMT is improved.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of HEMT epitaxial structure, the HEMT epitaxial structure include substrate and stack gradually AlN over the substrate at
Stratum nucleare, AlGaN buffer layer, GaN layer, AlGaN potential barrier and GaN cap rock, which is characterized in that
It is convex with multiple tapers for being arranged on the AlGaN fabric that the AlGaN buffer layer includes AlGaN fabric
It rises, the multiple tapered protrusion is evenly arranged on the AlGaN fabric, and one of the AlN nucleating layer is laminated in the substrate
Surface is first surface, and the projection of the multiple tapered protrusion on the first surface is not overlapped.
2. HEMT epitaxial structure according to claim 1, which is characterized in that two adjacent tapered protrusions are described
Nearest the distance between the two o'clock of distance is 150~550nm in projection on first surface.
3. HEMT epitaxial structure according to claim 2, which is characterized in that each tapered protrusion is in first table
The distance between the two o'clock of spaced furthest is 100~500nm in projection on face.
4. described in any item HEMT epitaxial structures according to claim 1~3, which is characterized in that the height of the tapered protrusion
For 100~500nm.
5. described in any item HEMT epitaxial structures according to claim 1~3, which is characterized in that the AlGaN fabric
With a thickness of 100~800nm.
6. described in any item HEMT epitaxial structures according to claim 1~3, which is characterized in that Al in the AlGaN buffer layer
Group be divided into 10~40%.
7. a kind of preparation method of HEMT epitaxial structure, which is characterized in that the preparation method includes:
One substrate is provided；
Growing AIN nucleating layer over the substrate；
AlGaN buffer layer is grown on the AlN nucleating layer,
Lithography operations are carried out to the AlGaN buffer layer, the surface of the AlGaN buffer layer is made to form multiple tapered protrusions；
GaN layer is grown on the AlGaN buffer layer；
AlGaN potential barrier is grown in the GaN layer；
GaN cap rock is grown in the AlGaN potential barrier.
8. preparation method according to claim 7, which is characterized in that described to carry out photoetching behaviour to the AlGaN buffer layer
Work includes:
A layer photoresist is coated on the AlGaN buffer layer；
Development is exposed to the photoresist, forms pattern on a photoresist, the pattern is multiple uniformly distributed cylinder graphs
Case；
The part that photoresist is not covered on the AlGaN buffer layer is performed etching；
Remove the photoresist on the AlGaN buffer layer.
9. preparation method according to claim 8, which is characterized in that use SF6, Ar, O2To the AlGaN buffer layer into
Row etching, the flow for the SF6 being passed through in reaction chamber is 50~500sccm, the flow of Ar that is passed through in reaction chamber be 1~
50sccm, the O being passed through in reaction chamber2Flow be 1~50sccm.
10. according to the described in any item preparation methods of claim 7~9, which is characterized in that grown on the AlN nucleating layer
When AlGaN buffer layer, the source Al of 10~500sccm is passed through into reaction chamber.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112151361A (en) * | 2020-08-21 | 2020-12-29 | 华灿光电(苏州）有限公司 | Preparation method of high electron mobility transistor |
| CN112366136A (en) * | 2020-09-28 | 2021-02-12 | 华灿光电（浙江）有限公司 | Preparation method of high electron mobility transistor |
-
2018
- 2018-12-13 CN CN201811526198.1A patent/CN109786454A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112151361A (en) * | 2020-08-21 | 2020-12-29 | 华灿光电(苏州）有限公司 | Preparation method of high electron mobility transistor |
| WO2022037668A1 (en) * | 2020-08-21 | 2022-02-24 | 华灿光电(苏州）有限公司 | High-electron-mobility transistor and preparation method therefor |
| CN112151361B (en) * | 2020-08-21 | 2022-06-14 | 华灿光电(苏州）有限公司 | Preparation method of high electron mobility transistor |
| CN112366136A (en) * | 2020-09-28 | 2021-02-12 | 华灿光电（浙江）有限公司 | Preparation method of high electron mobility transistor |
| CN112366136B (en) * | 2020-09-28 | 2023-03-14 | 华灿光电（浙江）有限公司 | Preparation method of high electron mobility transistor |
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Application publication date: 20190521 |