CN109768079A - A kind of HEMT epitaxial structure and preparation method thereof - Google Patents
A kind of HEMT epitaxial structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of HEMT epitaxial structures and preparation method thereof, belong to semiconductor light electro-technical field.The component of Al is gradually decreased along the stacking direction of AlGaN buffer layer in AlGaN buffer layer, so that the quality of the AlGaN buffer layer on AlN nucleating layer is preferable.AlGaN buffer layer includes the n AlGaN being sequentially laminated on AlN nucleating layer buffering sublayers, multiple tapered protrusions that each AlGaN buffering sublayer is set as including fabric and be arranged on fabric, make n-th AlGaN buffering sublayer, gradually to when the direction longitudinal growth of the first surface far from substrate, n-th of AlGaN buffering sublayer can be simultaneously towards the direction cross growth of parallel first surface on fabric.The partial dislocation defect generated when n-th of AlGaN buffering sublayer longitudinal growth can buffer the partial dislocation defect generated when sublayer cross growth with n-th of AlGaN and offset, and the crystal quality of n-th of AlGaN buffering sublayer can be improved in the reduction of defect.Whole AlGaN buffer layer Quality advance, and then improve the quality of the GaN layer grown on AlGaN buffer layer.
Description
Technical field
The present invention relates to semiconductor light electro-technical field, in particular to a kind of HEMT epitaxial structure and preparation method thereof.
Background technique
HEMT (High Electron Mobility Transistor, high electron mobility transistor) is a kind of heterogeneous
Junction field effect transistor is widely used in various electric appliances.HEMT epitaxial structure is the basis for preparing HEMT device, when previous
Kind of HEMT epitaxial structure includes substrate and successively grow AlN nucleating layer, AlGaN buffer layer, GaN layer, AlGaN gesture on substrate
Barrier layer and GaN cap rock, wherein substrate can be silicon carbide substrates, Sapphire Substrate or monocrystalline substrate.
But it is lost due to there is biggish lattice between GaN layer and silicon carbide substrates, Sapphire Substrate or monocrystalline substrate
Match, even if thering is AlN nucleating layer and AlGaN buffering sublayer to play buffer function between substrate and GaN layer, what final growth obtained
The crystal quality of GaN layer is also not good enough, and then influences the quality of HEMT.
Summary of the invention
The embodiment of the invention provides a kind of HEMT epitaxial structures and preparation method thereof, can be improved the quality of HEMT.Institute
It is as follows to state technical solution:
The embodiment of the invention provides a kind of HEMT epitaxial structure, the HEMT epitaxial structure includes substrate and stacks gradually
AlN nucleating layer, AlGaN buffer layer, GaN layer, AlGaN potential barrier and GaN cap rock over the substrate,
The component of Al is gradually decreased along the stacking direction of the AlGaN buffer layer in the AlGaN buffer layer, described
AlGaN buffer layer includes the AlGaN buffering sublayers that n is stacked gradually, wherein 2≤n and n is integer,
It is convex with multiple tapers for being arranged on the fabric that each AlGaN buffering sublayer includes fabric
It rises, the multiple tapered protrusion is evenly arranged on the fabric, and the surface that the AlN nucleating layer is laminated in the substrate is
First surface, the projection of the multiple tapered protrusion on the first surface are not overlapped.
Optionally, 2≤n≤10.
Optionally, the thickness of the tapered protrusion of the n AlGaN buffering sublayer is equal.
Optionally, in the projection of two adjacent tapered protrusions on the first surface the nearest two o'clock of distance it
Between distance be 150~350nm.
Optionally, in the projection of each tapered protrusion on the first surface between the two o'clock of spaced furthest away from
From being 100~300nm.
Optionally, the height of the tapered protrusion is 100~300nm.
Optionally, the fabric with a thickness of 100~300nm.
The embodiment of the invention provides a kind of preparation method of HEMT epitaxial structure, the preparation method includes:
One substrate is provided；
Growing AIN nucleating layer over the substrate；
AlGaN buffer layer is grown on the AlN nucleating layer, wherein the component of Al is described in the AlGaN buffer layer
The stacking direction of AlGaN buffer layer gradually decreases,
The AlGaN buffer layer includes the AlGaN buffering sublayers that n is stacked gradually, wherein 2≤n and n is integer, each
The AlGaN buffers multiple tapered protrusions that sublayer includes fabric with is arranged on the fabric, the multiple
Tapered protrusion is evenly arranged on the fabric, and the surface that the AlN nucleating layer is laminated in the substrate is first surface, institute
The projection of multiple tapered protrusions on the first surface is stated not to be overlapped；
GaN layer is grown in AlGaN buffering sublayer；
AlGaN potential barrier is grown in the GaN layer；
GaN cap rock is grown in the AlGaN potential barrier.
Optionally, AlGaN buffer layer is grown on the AlN nucleating layer includes:
The n AlGaN buffering sublayers are successively grown on the AlN nucleating layer, grow each AlGaN buffer sublayer
When layer, it is passed through flow into reaction chamber and is gradually decrease to terminate the source Al of flow, and initial flow and end by initial flow
The difference of flow is 1~50sccm.
Optionally, the end flow in the source Al being passed through when the growth regulation n-1 AlGaN buffering sublayers is n-th of growth
The initial flow in the source Al being passed through when the AlGaN buffering sublayer.
Technical solution provided in an embodiment of the present invention has the benefit that the group by Al in AlGaN buffer layer sets up separately
The stacking direction being set to along AlGaN buffer layer gradually decreases, the one side that may make AlGaN buffer layer to contact with AlN nucleating layer
Lattice constant and the lattice constant of AlN nucleating layer are closer, the lattice constant for the one side that AlGaN buffer layer is contacted with GaN layer with
The lattice constant of GaN layer is closer, and the matched well with AlN nucleating layer and GaN layer can be achieved at the same time in AlGaN buffer layer, this
Growth pattern may make the quality of the AlGaN buffer layer on AlN nucleating layer preferable.AlGaN buffer layer includes n and is sequentially laminated on
AlGaN on AlN nucleating layer buffers sublayer, and each AlGaN buffering sublayer is set as including fabric and setting in bottom knot
Multiple tapered protrusions on structure, so that n-th of AlGaN buffering sublayer can be on the fabric of (n-1)th AlGaN buffering sublayer
Good growth.And the presence of multiple tapered protrusions, make n-th of AlGaN buffering sublayer on fabric gradually to far from substrate
First surface direction longitudinal growth when, n-th AlGaN buffering sublayer can simultaneously towards parallel first surface direction it is lateral
Growth.N-th of AlGaN buffering sublayer can generate not in longitudinal growth and cross growth in n-th of AlGaN buffering sublayer
Equidirectional dislocation defects, n-th of AlGaN buffers the partial dislocation defect generated when sublayer longitudinal growth can be with n-th of AlGaN
It buffers the partial dislocation defect generated when sublayer cross growth to offset, n-th of AlGaN buffering sublayer can be improved in the reduction of defect
Crystal quality, the crystal quality of AlGaN buffer layer entirety is improved, and then improves the GaN grown on AlGaN buffer layer
The quality of layer, finally improves the quality of obtained HEMT.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of HEMT epitaxial structure provided in an embodiment of the present invention；
Fig. 2 is the perspective view of tapered protrusion provided in an embodiment of the present invention on substrate；
Fig. 3 is a kind of preparation method flow chart of HEMT epitaxial structure provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structural schematic diagram of HEMT epitaxial structure provided in an embodiment of the present invention, as shown in Figure 1, the HEMT
Epitaxial structure include substrate 1 and the AlN nucleating layer 2 being cascading on substrate 1, AlGaN buffer layer 3, GaN layer 4,
AlGaN potential barrier 5 and GaN cap rock 6.
The component of Al is gradually decreased along the stacking direction of AlGaN buffer layer 3 in AlGaN buffer layer 3, and AlGaN buffer layer 3 wraps
Include the AlGaN buffering sublayers 31 that n is stacked gradually, wherein 2≤n and n is integer.
It is convex with multiple tapers for being arranged on fabric 311 that each AlGaN buffering sublayer 31 includes fabric 311
312 are played, multiple tapered protrusions 312 are evenly arranged on fabric 311, and the surface that AlN nucleating layer 2 is laminated in substrate 1 is first
Surface 11, projection 312a of multiple tapered protrusions 312 on first surface 11 are not overlapped.
The component of Al in AlGaN buffer layer 3 is set as gradually decreasing along the stacking direction of AlGaN buffer layer 3, may make
The lattice constant for the one side that AlGaN buffer layer 3 is contacted with AlN nucleating layer 2 and the lattice constant of AlN nucleating layer 2 are closer,
The lattice constant for the one side that AlGaN buffer layer 3 is contacted with GaN layer 4 and the lattice constant of GaN layer 4 are closer.AlGaN buffer layer 3
The matched well with AlN nucleating layer 2 and GaN layer 4 can be achieved at the same time, this growth pattern may make on AlN nucleating layer 2
The quality of AlGaN buffer layer 3 is preferable.
AlGaN buffer layer 3 includes the n AlGaN being sequentially laminated on AlN nucleating layer 2 buffering sublayers 31, each AlGaN
Multiple tapered protrusions 312 that buffering sublayer 31 is set as including fabric 311 and be arranged on fabric 311, so that n-th
A AlGaN buffering sublayer 31 can well be grown on the fabric 311 of (n-1)th AlGaN buffering sublayer 31.And multiple tapers
The presence of protrusion 312, n-th of AlGaN buffering sublayer 31 is on fabric 311 gradually to the first surface 11 far from substrate 1
Direction longitudinal growth when, n-th AlGaN buffering sublayer 31 can be simultaneously towards the direction cross growth of parallel first surface 11.
N-th of AlGaN buffering sublayer 31 can generate different in longitudinal growth and cross growth in n-th of AlGaN buffering sublayer 31
The dislocation defects in direction, n-th of AlGaN buffers the partial dislocation defect generated when 31 longitudinal growth of sublayer can be with n-th of AlGaN
It buffers the partial dislocation defect generated when 31 cross growth of sublayer to offset, n-th of AlGaN buffer sublayer can be improved in the reduction of defect
The crystal quality of layer 31, the whole crystal quality of AlGaN buffer layer 3 are improved.And in conventional method only longitudinal growth n
AlGaN buffers the dislocation that sublayer 31 is generated in growth can be mobile towards the interface of AlGaN buffer layer 3 and GaN layer 4, shadow
Ring the quality of the GaN layer 4 grown on AlGaN buffer layer 3.And the dislocation that n AlGaN buffering sublayer 31 is generated in cross growth
Defect can then be moved to the side wall of n AlGaN buffering sublayer 31 rather than AlGaN buffer layer along the direction of parallel first surface 11
3 with the interface of GaN layer 4.The dislocation defects for being moved to the interface of AlGaN buffer layer 3 and GaN layer 4 are relatively reduced, are improved
The quality of the surface quality of AlGaN buffer layer 3 and 4 joint of GaN layer, the GaN layer 4 grown on AlGaN buffer layer 3 is preferable,
Improve the quality of finally obtained HEMT.
Optionally, the component of the Al in AlGaN buffer layer 3 can be 10~70%.The component of Al in AlGaN buffer layer 3
When in the above range, the crystal quality of AlGaN buffer layer 3 itself is preferable, can also preferably play buffering substrate and GaN layer it
Between lattice mismatch effect.
Optionally, the n in n AlGaN buffering sublayer 31 can be in the range of 2≤n≤10.The number of AlGaN buffering sublayer 31
When amount is arranged within this range, the quality of obtained AlGaN buffer layer 3 is preferable, and the preparation efficiency of HEMT epitaxial structure is also higher.
Illustratively, the component of the Al in AlGaN buffer layer 3 can be obtained by 40~70% linear decreases to 10~40%
AlGaN buffer layer 3 quality it is preferable, be also easy to realize.
In a kind of situation provided in an embodiment of the present invention, the component of the Al in AlGaN buffer layer 3 can gradually be subtracted by 50%
As low as 10%, the quality for the HEMT epitaxial structure that may make further increases.
Optionally, the overall thickness of AlGaN buffer layer 3 can be 200~1000nm, and the HEMT epitaxial structure obtained at this time is whole
Crystal quality it is preferable.
In a kind of situation provided in an embodiment of the present invention, the thickness of AlGaN buffer layer 3 can be 800nm.Obtained HEMT
The quality of epitaxial structure is preferable.
Illustratively, the thickness of fabric 311 can be 100~300nm.The thickness of fabric 311 is arranged in this model
When enclosing, the whole quality of obtained AlGaN buffer layer 3 is preferable.
In a kind of situation provided in an embodiment of the present invention, the thickness of fabric 311 can be 100nm.Obtained HEMT
The quality of epitaxial structure is preferable.
Optionally, the thickness of the fabric 311 of n AlGaN buffering sublayer 31 can be equal.This set is easy to real
Existing, the whole quality of obtained AlGaN buffer layer 3 is also preferable.
Optionally, the height of tapered protrusion 312 can be 100~300nm.The height of tapered protrusion 312 is arranged in this range
When interior, the whole crystal quality of AlGaN buffer layer 3 can be preferably improved, guarantees the crystal of finally obtained HEMT epitaxial structure
Quality.
Illustratively, the thickness of the tapered protrusion 312 of n AlGaN buffering sublayer 31 can be equal.This set is easy to real
Existing, the whole quality of obtained AlGaN buffer layer 3 is also preferable.
Fig. 2 is the perspective view of tapered protrusion provided in an embodiment of the present invention on substrate, as shown in Fig. 2, adjacent
Distance L of two tapered protrusions 312 on the projection 312a on first surface 11 between the nearest two o'clock of distance be 150~
350nm.This set can control the distance between two adjacent tapered protrusions 312, preferably improve in AlGaN buffer layer 3
Total quality.
Optionally, the two o'clock that projects 312a on spaced furthest of each tapered protrusion 312 on the first surface 11 of substrate 1
The distance between D be 100~300nm.This structure is relatively easy to realize, also can preferably improve HEMT epitaxial structure
Quality.
Illustratively, in a kind of situation provided in an embodiment of the present invention, L can be 200nm, and D can be 150nm, and taper is convex
The height risen can be 200nm, and the quality of the HEMT epitaxial structure obtained at this time is preferable.
Illustratively, the thickness of GaN layer 4 can be 300~1000nm.It can guarantee and grow in GaN layer 4 and GaN layer 4 at this time
The quality of structure.
Optionally, the thickness of AlGaN potential barrier 5 can be 5~50nm.It can guarantee AlGaN potential barrier 5 and in AlGaN gesture
The quality of the GaN cap rock 6 grown in barrier layer 5.
Optionally, the growth thickness of GaN cap rock 6 can be 1~20nm.It can guarantee the quality of GaN cap rock 6.
Fig. 3 is a kind of preparation method flow chart of HEMT epitaxial structure provided in an embodiment of the present invention, as shown in figure 3, should
Preparation method includes:
S1: a substrate is provided.
Wherein, substrate can be Sapphire Substrate or monocrystalline substrate.
S2: growing AIN nucleating layer on substrate.
Wherein, the growth temperature of AlN nucleating layer can be 1000~1200 DEG C, the growth pressure of AlN nucleating layer can for 100~
500Torr.The preferable AlN nucleating layer of quality can be obtained with this condition.
Optionally, the growth thickness of AlN nucleating layer can be 50~400nm.It can guarantee and grow on AlN nucleating layer
The quality of AlGaN buffering sublayer.
S3: growing AlGaN buffer layer on AlN nucleating layer,
Wherein, the component of Al is gradually decreased along the stacking direction of AlGaN buffer layer in AlGaN buffer layer,
AlGaN buffer layer includes the AlGaN buffering sublayers that n is stacked gradually, wherein 2≤n and n is integer, each
AlGaN buffers multiple tapered protrusions that sublayer includes fabric with is arranged on fabric, and multiple tapered protrusions are uniformly distributed
On fabric, surface that AlN nucleating layer is laminated in substrate is first surface, and multiple tapered protrusions are on the first surface
Projection is not overlapped.
Optionally, in step S3 can include:
N AlGaN buffering sublayer is successively grown on AlN nucleating layer, when growing each AlGaN buffering sublayer, to anti-
The intracavitary flow that is passed through is answered to be gradually decrease to terminate the source Al of flow by initial flow, and the difference of initial flow and end flow is 1
~50sccm.This set can guarantee that the quality of the AlGaN buffering sublayer each obtained is preferable, guarantee entire AlGaN buffering
The quality of layer.
Optionally, the end flow in the source Al being passed through when n-1 AlGaN buffering sublayer of growth regulation is n-th of AlGaN of growth
The initial flow in the source Al being passed through when buffering sublayer.This operation is easily achieved, the quality of obtained AlGaN buffer layer entirety
Preferably.
Illustratively, the initial flow in the source Al being passed through when one AlGaN of growth regulation buffering sublayer can for 300~
The end flow of 500sccm, the source Al being passed through when growing n-th of AlGaN buffering sublayer can be 1~50sccm.With this condition
The total quality of obtained AlGaN buffer layer is preferable.
In step S3, the growth temperature of each AlGaN buffering sublayer can be 1000~1200 DEG C, each AlGaN buffering
The growth pressure of sublayer can be 100~500Torr.The total quality of obtained AlGaN buffer layer is preferable.
Optionally, step S3 further includes, every to have grown an AlGaN buffering sublayer, carries out to AlGaN buffering sublayer
Lithography operations make the surface of AlGaN buffering sublayer form multiple tapered protrusions.
Specifically can include:
A layer photoresist is coated in AlGaN buffering sublayer.
Development is exposed to photoresist, forms pattern on a photoresist, pattern is multiple uniformly distributed cylindrical patterns.
The part that photoresist is not covered in AlGaN buffering sublayer is performed etching.
Remove the photoresist in AlGaN buffering sublayer.This operation is relatively easy to realize, can also obtain shape and more advise
Tapered protrusion then, and then guarantee to buffer the growth quality of sublayer in AlGaN.
Optionally, ICP (English: inductively coupled plasma, Chinese: inductively coupled plasma) can be passed through
Lithographic technique performs etching AlGaN buffering sublayer, and AlGaN buffering sublayer is performed etching and can be passed through using ICP lithographic technique
ICP etching machine is realized, is performed etching to AlGaN buffering sublayer using ICP lithographic technique and more accurately can be buffered sublayer to AlGaN
Etched shape controlled.
Illustratively, ICP dry etching technology can be used to perform etching AlGaN buffering sublayer, and use SF6, Ar, O2
Etching gas performs etching AlGaN buffering sublayer, and the flow for the SF6 being passed through in reaction chamber is 50~500sccm, is passed through
The flow of Ar in reaction chamber is 1~50sccm, the O that is passed through in reaction chamber2Flow be 1~50sccm.In the above conditions
The surface quality of obtained AlGaN buffering sublayer is preferable.
When etching AlGaN buffering sublayer, etching gas is ionized to obtain plasma ICP etching machine, and plasma exists
The surface not being covered by photoresist in AlGaN buffering sublayer is acted under the action of ICP etching machine, gradually in AlGaN
Shrinkage pool is etched in buffering sublayer, and since the directly vertical first surface of most of plasma acts on AlGaN buffer sublayer
On layer, therefore shrinkage pool can buffer the oppositely extending of the direction of growth of sublayer to AlGaN, and in plasma gradually to first surface
During direction etches, the plasma of side wall for directly bombarding shrinkage pool can gradually use up reduction, shrinkage pool extension mistake
Cheng Zhong, sectional area of the shrinkage pool on its vertical depth direction can be gradually reduced, and then obtain more regular tapered protrusion.
After the photoresist in removing AlGaN buffering sublayer, substrate is cleaned using cleaning agent.
S4: GaN layer is grown on AlGaN buffer layer.
Wherein, the growth temperature of GaN layer can be 1000~1100 DEG C, and the growth pressure of GaN layer can be 100~400Torr.
The preferable GaN layer of quality can be obtained with this condition.
Optionally, the growth thickness of GaN layer can be 300~1000nm.It can guarantee the AlGaN buffering grown in GaN layer
The quality of sublayer.
S5: AlGaN potential barrier is grown in GaN layer.
Wherein, the growth temperature of AlGaN potential barrier can be 1000~1200 DEG C, and the growth pressure of AlGaN potential barrier can be
100~500Torr.The preferable AlGaN potential barrier of quality can be obtained with this condition.
Optionally, the growth thickness of AlGaN potential barrier can be 5~50nm.It can guarantee and grow in AlGaN potential barrier
The quality of AlGaN buffering sublayer.
S6: GaN cap rock is grown in AlGaN potential barrier.
Wherein, the growth temperature of GaN cap rock can be 1000~1100 DEG C, the growth pressure of GaN cap rock can for 100~
400Torr.The preferable GaN cap rock of quality can be obtained with this condition.
Optionally, the growth thickness of GaN cap rock can be 1~20nm.It can guarantee the AlGaN buffering grown on GaN cap rock
The quality of cap rock.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of HEMT epitaxial structure, the HEMT epitaxial structure include substrate and stack gradually AlN over the substrate at
Stratum nucleare, AlGaN buffer layer, GaN layer, AlGaN potential barrier and GaN cap rock, which is characterized in that
The component of Al is gradually decreased along the stacking direction of the AlGaN buffer layer in the AlGaN buffer layer, and the AlGaN is slow
Rushing layer includes the AlGaN buffering sublayers that n is stacked gradually, wherein 2≤n and n is integer,
Each AlGaN buffers multiple tapered protrusions that sublayer includes fabric with is arranged on the fabric,
The multiple tapered protrusion is evenly arranged on the fabric, and the surface that the AlN nucleating layer is laminated in the substrate is the
One surface, the projection of the multiple tapered protrusion on the first surface are not overlapped.
2. HEMT epitaxial structure according to claim 1, which is characterized in that 2≤n≤10.
3. HEMT epitaxial structure according to claim 1, which is characterized in that the taper of the n AlGaN buffering sublayer is convex
The thickness risen is equal.
4. described in any item HEMT epitaxial structures according to claim 1~3, which is characterized in that two adjacent tapers
Nearest the distance between the two o'clock of distance is 150~350nm in the projection of protrusion on the first surface.
5. described in any item HEMT epitaxial structures according to claim 1~3, which is characterized in that each tapered protrusion exists
The distance between the two o'clock of spaced furthest is 100~300nm in projection on the first surface.
6. described in any item HEMT epitaxial structures according to claim 1~3, which is characterized in that the height of the tapered protrusion
For 100~300nm.
7. described in any item HEMT epitaxial structures according to claim 1~3, which is characterized in that the thickness of the fabric
For 100~300nm.
8. a kind of preparation method of HEMT epitaxial structure, which is characterized in that the preparation method includes:
One substrate is provided；
Growing AIN nucleating layer over the substrate；
AlGaN buffer layer is grown on the AlN nucleating layer, wherein the component of Al is described in the AlGaN buffer layer
The stacking direction of AlGaN buffer layer gradually decreases,
The AlGaN buffer layer includes the AlGaN buffering sublayers that n is stacked gradually, wherein 2≤n and n is integer, it is each described
AlGaN buffers multiple tapered protrusions that sublayer includes fabric with is arranged on the fabric, the multiple taper
Protrusion is evenly arranged on the fabric, and the surface that the AlN nucleating layer is laminated in the substrate is first surface, described more
The projection of a tapered protrusion on the first surface is not overlapped；
GaN layer is grown in AlGaN buffering sublayer；
AlGaN potential barrier is grown in the GaN layer；
GaN cap rock is grown in the AlGaN potential barrier.
9. preparation method according to claim 8, which is characterized in that grow AlGaN buffer layer on the AlN nucleating layer
Include:
The n AlGaN buffering sublayers are successively grown on the AlN nucleating layer, are grown each AlGaN and are buffered sublayer
When, it is passed through flow into reaction chamber and is gradually decrease to terminate the source Al of flow by initial flow, and initial flow and end are flowed
The difference of amount is 1~50sccm.
10. preparation method according to claim 9, which is characterized in that when the growth regulation n-1 AlGaN buffering sublayers
The end flow in the source Al being passed through is the initial flow in the source Al being passed through when growing n-th of AlGaN buffering sublayer.
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| CN113192820B (en) * | 2021-03-12 | 2023-04-11 | 南昌大学 | Preparation method of silicon substrate aluminum nitride film |
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