CN109786256B - Preparation method of self-aligned surface channel field effect transistor and power device - Google Patents

Preparation method of self-aligned surface channel field effect transistor and power device Download PDF

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CN109786256B
CN109786256B CN201910044987.XA CN201910044987A CN109786256B CN 109786256 B CN109786256 B CN 109786256B CN 201910044987 A CN201910044987 A CN 201910044987A CN 109786256 B CN109786256 B CN 109786256B
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metal
gate
metal layer
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CN109786256A (en
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王元刚
吕元杰
冯志红
蔚翠
周闯杰
何泽召
宋旭波
梁士雄
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CETC 13 Research Institute
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Priority to PCT/CN2019/080067 priority patent/WO2020147200A1/en
Priority to US16/964,726 priority patent/US11189696B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
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  • Chemical & Material Sciences (AREA)
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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

The invention provides a preparation method of a self-aligned surface channel field effect transistor and a power device, belonging to the field of microwave power devices and comprising the following steps: depositing a first metal mask layer; preparing a first photoresist layer; forming a source region graph and a drain region graph; depositing a source metal layer and a drain metal layer on the source region graph and the drain region graph; stripping and removing the first photoresist; depositing a second metal mask layer; preparing a second photoresist layer, exposing and developing to form at least one grid region pattern, wherein the grid region pattern is deflected to the source metal layer; removing the first metal mask layer and the second metal mask layer between the source metal layer and the drain metal layer by wet etching; depositing a gate metal layer at the pattern of the gate region; and stripping to remove the second photoresist layer. The preparation method of the self-aligned surface channel field effect transistor provided by the invention has the advantages that the gate bias source is prepared, the saturation current can be considered, the breakdown voltage of the device is improved, and the high power density is obtained.

Description

Preparation method of self-aligned surface channel field effect transistor and power device
Technical Field
The invention belongs to the technical field of microwave power devices, and particularly relates to a preparation method of a self-aligned surface channel field effect transistor and a power device.
Background
Surface channel devices have great advantages in high speed, high confinement and the like, and are concerned in the high frequency field. The commonly used surface channel materials at present comprise a p-type surface channel formed by processing diamond by hydrogen plasma, and two-dimensional materials such as graphene, BN, black phosphorus, GaN and the like. The characteristics of the surface channel device are greatly influenced by the surface state, and the self-alignment process developed in recent years effectively solves the problems. However, the self-aligned process can only realize the structure of the device with equal spacing between the gate source and the gate drain, and the breakdown voltage and the saturation current are difficult to be considered simultaneously.
Disclosure of Invention
The invention aims to provide a preparation method of a self-aligned surface channel field effect transistor, which aims to solve the technical problems that in the prior art, a grid is arranged in the middle of a source and a drain, and the breakdown voltage is generally low.
In order to achieve the purpose, the invention adopts the technical scheme that: a method for preparing a self-aligned surface channel field effect transistor is provided, which comprises the following steps:
depositing a first metal mask layer on the surface channel epitaxial layer;
preparing a first photoresist layer on the first metal mask layer;
exposing and developing to form a source region graph and a drain region graph;
removing the first metal mask layer at the source region pattern and the drain region pattern by wet etching;
depositing a source metal layer and a drain metal layer on the source region graph and the drain region graph;
stripping and removing the first photoresist;
depositing a second metal mask layer on the source metal layer, the drain metal layer and the first metal mask layer;
preparing a second photoresist layer, exposing and developing to form at least one grid region pattern, wherein the grid region pattern is deflected to the source metal layer;
removing the first metal mask layer and the second metal mask layer between the source metal layer and the drain metal layer by wet etching, wherein the source metal layer and the drain metal layer are corrosion stop layers;
depositing a gate metal layer at the gate region pattern;
and stripping to remove the second photoresist layer.
Further, prior to depositing a gate metal layer at the gate region pattern:
and a gate lower dielectric layer is deposited on the surface channel epitaxial layer, and the gate metal layer is deposited on the gate lower dielectric layer.
Further, the under-gate dielectric layer is a single-layer dielectric;
or, the grid lower dielectric layer is a multilayer dielectric.
And further, preparing two layers of the second photoresist layer, exposing and developing to form at least one grid region pattern, wherein the grid region pattern is deviated to the source metal layer.
Further, when the number of the gate region patterns is two or more, the structures of the gate region patterns are the same;
or, the structure of at least one grid region pattern is different from the structure of other grid region patterns;
or the structures of the gate region patterns are different.
Further, the structure of the gate metal layer is one or a combination of a straight gate, a T-shaped gate, a TT-shaped gate, a TTT-shaped gate, a U-shaped gate and a Y-shaped gate.
Furthermore, the metal types of the first metal mask layer and the second metal mask layer are the same and different from the metal types of the source metal layer and the drain metal layer;
or the first metal mask layer and the second metal mask layer are different in metal type and different from the source metal layer and the drain metal layer in metal type.
Furthermore, the first metal mask layer, the second metal mask layer, the source metal layer, the drain metal layer and the gate metal layer are all single-layer metals;
or, both are multilayer metals;
or at least one single layer metal and one multi-layer metal.
Further, after the gate metal layer is prepared, a passivation layer is prepared.
The invention also provides a power device prepared by the method.
The preparation method of the self-aligned surface channel field effect transistor has the advantages that: compared with the prior art, the gate bias source or the gate bias drain is prepared, namely the gate is not positioned in the middle of the source drain, wherein the gate bias source device can give consideration to saturation current, the breakdown voltage of the device is improved, and high power density is obtained.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a first structural schematic diagram of a method for manufacturing a self-aligned surface channel field effect transistor according to an embodiment of the present invention;
fig. 2 is a second structural schematic diagram of a method for manufacturing a self-aligned surface channel field effect transistor according to an embodiment of the present invention.
Wherein, in the figures, the respective reference numerals:
1-surface channel epitaxial layer; 2-a source metal layer; 3-a second metal mask layer; 4-a second photoresist layer; 5-a gate metal layer; 6-gate region pattern; 7-a leakage metal layer; 8-a first metal mask layer; 9-a first photoresist layer; 10-gate lower dielectric layer.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 and fig. 2, a method for fabricating a self-aligned surface channel field effect transistor according to the present invention will now be described. The preparation method of the self-aligned surface channel field effect transistor comprises the following steps:
depositing a first metal mask layer 8 on the surface channel epitaxial layer 1, see a in fig. 1 and 2;
preparing a first photoresist layer 9 on the first metal mask layer 8, see b in fig. 1 and 2;
exposing and developing to form a source region pattern and a drain region pattern, which are shown as c in fig. 1 and 2;
removing the first metal mask layer 8 at the source region pattern and the drain region pattern by wet etching;
depositing a source metal layer 2 and a drain metal layer 7 at the positions of the source region pattern and the drain region pattern, see d in fig. 1 and 2;
stripping and removing the first photoresist;
depositing a second metal mask layer 3 on the source metal layer 2, the drain metal layer 7 and the first metal mask layer 8, see e in fig. 1 and 2;
preparing a second photoresist layer 4, exposing and developing to form at least one gate region pattern 6, wherein the gate region pattern 6 is biased to the source metal layer 2, see f in fig. 1 and 2;
wet etching is performed to remove the first metal mask layer 8 and the second metal mask layer 3 between the source metal layer 2 and the drain metal layer 7, see g in fig. 1 and 2, and the source metal layer 2 and the drain metal layer 7 are etch stop layers;
depositing a gate metal layer 5 at the gate region pattern 6, see h in fig. 1 and 2;
the second photoresist layer 4 is stripped off.
Compared with the prior art, the preparation method of the self-aligned surface channel field effect transistor has the advantages that the gate metal layer 5 is prepared in a manner of deviating to the source metal layer 2 or the drain metal layer 7 instead of being arranged in the middle of the source and the drain, namely the source metal layer 2 and the drain metal layer 7 are asymmetrically distributed relative to the gate metal layer 5, wherein the gate source device can give consideration to saturation current, breakdown voltage and working voltage are effectively improved, and power density of the device is improved; and the T-shaped gate is beneficial to taking the characteristics of gate parasitic capacitance and gate resistance into consideration, and the frequency characteristic of the device is improved.
Wherein a mesa isolation process may be performed after any of the above steps to separate the device fabricated according to the present invention from other parts.
And forming a corresponding region pattern by exposing each photoresist layer once and developing once, or exposing each photoresist layer many times and developing many times, wherein the layer number of each photoresist layer is an integer greater than or equal to 1.
In this embodiment, when the gate is biased to the source, that is, the effective gate-source distance is smaller than the effective gate-drain distance, the field effect transistor can take into account the saturation current and provide the breakdown voltage and the working voltage. Of course, the effective gate-source pitch may also be greater than the effective gate-drain pitch of the device.
Referring to fig. 1 to fig. 2, as an embodiment of the method for manufacturing a self-aligned surface channel field effect transistor provided by the present invention, before depositing a gate metal layer 5 at the gate region pattern 6: and a gate lower dielectric layer 10 is deposited on the surface channel epitaxial layer 1, and the gate metal layer 5 is deposited on the gate lower dielectric layer 10.
Referring to fig. 1 to fig. 2, as an embodiment of the method for manufacturing a self-aligned surface channel field effect transistor provided in the present invention, the under-gate dielectric layer 10 is a single-layer dielectric; or, the gate lower dielectric layer 10 is a multilayer dielectric.
Referring to fig. 2, as a specific embodiment of the method for manufacturing a self-aligned surface channel field effect transistor according to the present invention, two layers of the second photoresist layer 4 are prepared, exposed, and developed to form at least one gate region pattern 6, where the gate region pattern 6 is biased toward the source metal layer 2.
As a specific embodiment of the method for manufacturing a self-aligned surface channel field effect transistor provided by the present invention, when the number of the gate region patterns 6 is two or more, the structures of the gate region patterns 6 are the same; alternatively, the structure of at least one of the gate region patterns 6 is different from the structure of the other gate region patterns 6; alternatively, the gate region patterns 6 have different structures. The structures and the sizes of the patterns can be completely the same or not, and are determined according to actual needs.
Referring to fig. 1 and fig. 2, as an embodiment of the method for manufacturing a self-aligned surface channel field effect transistor provided by the present invention, the gate metal layer 5 has a structure of one or more gate combinations of a straight gate, a T-type gate, a TT-type gate, a TTT-type gate, a U-type gate, and a Y-type gate. In this embodiment, the gate metal layer 5 in fig. 1 is a straight gate, the gate metal layer 5 in fig. 2 is a T-shaped gate, and in order to prepare the T-shaped gate, the second photolithography layer has two layers, and the structure and the number of the gate metal layer 5 are determined according to the structure and the number of the photolithography gate etching window patterns.
As a specific implementation manner of the preparation method of the self-aligned surface channel field effect transistor provided by the present invention, the metal types of the first metal mask layer 8 and the second metal mask layer 3 are the same, and are different from the metal types of the source metal layer 2 and the drain metal layer 7; or, the metal types of the first metal mask layer 8 and the second metal mask layer 3 are different, and still different from the metal types of the source metal layer 2 and the drain metal layer 7.
As a specific embodiment of the method for manufacturing a self-aligned surface channel field effect transistor provided by the present invention, the first metal mask layer 8, the second metal mask layer 3, the source metal layer 2, the drain metal layer 7, and the gate metal layer 5 are all single-layer metals; or, both are multilayer metals; or at least one single layer metal and one multi-layer metal. The metal types are all metals conventionally used in the preparation of existing semiconductor devices.
As a specific embodiment of the method for manufacturing a self-aligned surface channel field effect transistor provided by the present invention, after the gate metal layer 5 is manufactured, a passivation layer is manufactured to protect a device, and the passivation layer is a single-layer or multi-layer dielectric.
As a specific implementation mode of the preparation method of the self-aligned surface channel field effect transistor, the surface channel epitaxial layer 11 is a diamond p-type surface channel or is a two-dimensional material such as graphene, BN, black phosphorus, GaN and the like, and the used substrate is diamond, SiC, GaN, or the like,Sapphire, Si, Au, quartz, SiO2SiN, copper, or a composite substrate of a combination of materials.
The invention also provides a power device prepared by the method. According to the power device prepared by the invention, the gate metal layer 5 is biased to the source metal layer 2 instead of being arranged in the middle of the source and drain, namely the source metal layer 2 and the drain metal layer 7 are asymmetrically distributed relative to the gate metal layer 5, so that the gate bias source device can give consideration to the saturation current, the breakdown voltage and the working voltage are effectively improved, and the power density of the device is improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (9)

1. The preparation method of the self-aligned surface channel field effect transistor is characterized by comprising the following steps of:
depositing a first metal mask layer on the surface channel epitaxial layer;
preparing a first photoresist layer on the first metal mask layer;
exposing and developing to form a source region graph and a drain region graph;
removing the first metal mask layer at the source region pattern and the drain region pattern by wet etching;
depositing a source metal layer and a drain metal layer on the source region graph and the drain region graph;
stripping and removing the first photoresist;
depositing a second metal mask layer on the source metal layer, the drain metal layer and the first metal mask layer;
preparing a second photoresist layer, exposing and developing to form at least one grid region pattern, wherein the grid region pattern is deflected to the source metal layer;
removing the first metal mask layer and the second metal mask layer between the source metal layer and the drain metal layer by wet etching, wherein the source metal layer and the drain metal layer are corrosion stop layers;
depositing a gate metal layer at the gate region pattern;
stripping off the second photoresist layer;
before depositing a gate metal layer at the gate region pattern:
and a gate lower dielectric layer is deposited on the surface channel epitaxial layer, and the gate metal layer is deposited on the gate lower dielectric layer.
2. The method of manufacturing a self-aligned surface channel field effect transistor as claimed in claim 1, wherein: the grid lower dielectric layer is a single-layer dielectric;
or, the grid lower dielectric layer is a multilayer dielectric.
3. The method of manufacturing a self-aligned surface channel field effect transistor as claimed in claim 1, wherein: and preparing two layers of the second photoresist layers, exposing and developing to form at least one grid region pattern.
4. The method of manufacturing a self-aligned surface channel field effect transistor as claimed in claim 1, wherein: when the number of the grid region graphs is two or more, the structures of the grid region graphs are the same;
or, the structure of at least one grid region pattern is different from the structure of other grid region patterns;
or the structures of the gate region patterns are different.
5. The method of manufacturing a self-aligned surface channel field effect transistor as claimed in claim 1, wherein: the structure of the gate metal layer is one or a combination of a straight gate, a T-shaped gate, a U-shaped gate and a Y-shaped gate.
6. The method of manufacturing a self-aligned surface channel field effect transistor as claimed in claim 1, wherein: the first metal mask layer and the second metal mask layer are the same in metal type and different from the source metal layer and the drain metal layer in metal type;
or the first metal mask layer and the second metal mask layer are different in metal type and different in metal type from the source metal layer and the drain metal layer.
7. The method of manufacturing a self-aligned surface channel field effect transistor as claimed in claim 1, wherein: the first metal mask layer, the second metal mask layer, the source metal layer, the drain metal layer and the gate metal layer are all single-layer metals;
or, both are multilayer metals;
or at least one single layer metal and one multi-layer metal.
8. The method of manufacturing a self-aligned surface channel field effect transistor as claimed in claim 1, wherein: and preparing a passivation layer after preparing the gate metal layer.
9. A power device, characterized by: prepared by the process of any one of claims 1 to 8.
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CN101359686A (en) * 2007-08-03 2009-02-04 香港科技大学 Reliable normally-off iii-nitride active device structures, and related methods and systems
CN103199103A (en) * 2012-01-04 2013-07-10 瑞萨电子株式会社 Semiconductor device and method of manufacturing the semiconductor device
CN103311276A (en) * 2013-06-07 2013-09-18 中国科学院微电子研究所 Self-aligned graphene field effect transistor and manufacturing method thereof

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