CN109782056A - A kind of power detecting system changing calibration circuit for millimeter wave chip belt PVT - Google Patents
A kind of power detecting system changing calibration circuit for millimeter wave chip belt PVT Download PDFInfo
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- CN109782056A CN109782056A CN201910006923.0A CN201910006923A CN109782056A CN 109782056 A CN109782056 A CN 109782056A CN 201910006923 A CN201910006923 A CN 201910006923A CN 109782056 A CN109782056 A CN 109782056A
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- power detector
- power
- bias voltage
- input terminal
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Abstract
Power detector is essential in millimeter wave chip, in the prior art, power detector needs to be added the power detecting system detection output powers such as low-noise amplifier and power amplifier, therefore power supply (Power), voltage (Voltage), technological temperature (Temperature) variation influence, the i.e. influence of PVT be will receive.In identical RF input power, the D/C voltage of output can be varied widely, and the error for causing power detecting system to detect is very big.Invention provides a kind of novel power detecting system for millimeter wave chip belt PVT variation calibration circuit, the correction system based on two-point method is introduced in power detecting system of the invention, a kind of novel calibration system using direct current DC adder is especially given, circuit can be made to reduce millimeter wave chip belt bring measurement error due to power supply, voltage, change in process temperature.
Description
[technical field]
It is the present invention relates to power detection techniques field, in particular to a kind of for millimeter wave chip belt PVT variation calibration electricity
The power detecting system on road.
[background technique]
In transmitter now, power detecting system is most important.As more and more frequency bands are opened to civilian, quilt
The frequency band used is more and more, that different frequency bands work at the same time and deposit network and be independent interference source to each other, interferes each other
Work；Meanwhile in consolidated network, different user terminals are also interfering with each other, so, to coexist with other users, guarantee user
Terminal communication quality, it is necessary to ensure interference in permissible range.Meanwhile in the premise for meeting normal communication
Under, Modern Communication System is more desirable to reduce transmission power as far as possible, improves system performance, and extend terminal user uses the time.
Therefore, the detection system module for controlling transmission power has become component part indispensable in transmitting link.
Equally in millimeter wave chip, power detecting system therein is essential to need to be added power detecting system detection
The output powers such as low-noise amplifier and power amplifier.Described in following formula, RFIN accesses the radiofrequency signal of amplifier output.
NMOS is biased in weak inversion region.The electric current of weak inversion region are as follows:
Wherein, ID0It is current constant relevant to technique, W/L is the breadth length ratio of mos pipe, and n is related to depletion layer characteristic
A constant, VTIt is thermal voltage,
VGS=VNBIAS+VRFcos(wt)
Exponential function is subjected to series expansion, and is approached using second order, can be had
Low-pass filter is added in the output end of power detecting system to filter AC signal.The D/C voltage that can be exported
With the relationship of input rf signal voltage amplitude.The D/C voltage of output and the power of input signal are at dB linear relationship.
However due to by power supply (Power), voltage (Voltage), technological temperature (Temperature) variation, i.e. PVT
Influence, in identical RF input power, the D/C voltage of output can be varied widely, influence detection effect, cause function
The error of rate detection system detection is very big.
[summary of the invention]
In order to overcome technical problem present in existing millimeter wave chip power detection system, i.e., because power detection system is added
System detects low-noise amplifier and power amplifier etc. and the influence by technological temperature mains voltage variations is made to cause DC electric
The technical issues of variation of pressure, the large error for causing power detecting system to detect, novel is used for the present invention provides a kind of
The power detecting system of circuit is calibrated in millimeter wave chip belt PVT variation, is used in power detecting system of the invention and is based on two o'clock
The setting of the correcting circuit of detection, the featured configuration of combined circuit can reduce power supply (Power), voltage (Voltage), work
Skill temperature (Temperature), i.e. PVT change and bring measurement error, improve the measurement effect of calibration circuit, give one
Kind utilizes the novel calibration circuit of direct current DC adder.
In order to achieve the above object, the present invention is achieved by the following technical programs:
A kind of novel power detecting system for millimeter wave chip belt PVT variation calibration circuit, which is characterized in that packet
Containing main power detector 1, secondary power detector 21 and p pipe bias-voltage generating circuit, secondary power detector 22 and the biasing of n pipe
The load of bias voltage caused by voltage generation circuit, the p pipe bias-voltage generating circuit and n pipe bias-voltage generating circuit
In main power detector 1, main calibration circuit is formed；The pair power detector 21 and secondary power detector 22 pass through bias voltage
Generation circuit is connect with the main power detector 1, forms auxiliary calibration circuit.
Further, which is characterized in that the main power detector module includes main power detector 1, rf inputs
RF1, DC output end DC1, bias voltage signal N channel input terminal NBIAS1, bias voltage signal P channel input terminal PBIAS1.
Further, which is characterized in that the pair power detector 21 and p pipe bias-voltage generating circuit module include pair
Power detector 21, operational amplifier OPA21, rf inputs RF21, DC output end DC21, the input of bias voltage signal N channel
Hold NBIAS21, bias voltage signal P channel input terminal PBIAS21；The pair power detector 22 and n pipe bias-voltage generating circuit
Module includes secondary power detector 22, operational amplifier OPA22, rf inputs RF22, DC output end DC22, bias voltage signal
N channel input terminal NBIAS22, bias voltage signal P channel input terminal PBIAS22.
Further, which is characterized in that the end NBIAS21 of the pair power detector 21 and the positive input of voltage end Vadd
The end DC21 of electrical connection, the pair power detector 21 is electrically connected with the positive input of the operational amplifier OPA21, the pair function
The PBIAS21 of rate detector 21 is connect with the end the bias voltage signal P channel input terminal PBIAS1 of the main power detector, institute
The negative input for stating operational amplifier OPA21 is electrically connected with voltage end Vlo input, the output of the operational amplifier 21 and the master
The bias voltage signal P channel end input terminal PBIAS21 of power detector connects；The NBIAS22 of the pair power detector 22
End is connect with adder Vadd input terminal, and the end DC22 of the pair power detector 22 and the operational amplifier OPA22 are just
The bias voltage signal P channel of input electrical connection, the PBIAS22 and the main power detector of the pair power detector 22 is defeated
Enter to hold the end PBIAS1 to connect, the negative input of the operational amplifier OPA21 is electrically connected with voltage end Vhi input.
Further, which is characterized in that when main power detector 1 has RF input signal, main power detector current value is full
Foot:
The electric current of secondary power detector 21 is
Wherein:
ID0 is a current constant relevant to technique,
W/L is the breadth length ratio of pipe,
N is a constant relevant to depletion layer characteristic,
VTIt is thermal voltage.
Beneficial effects of the present invention: compared with prior art, invention provides a kind of novel for millimeter wave chip belt
The power detecting system of circuit is calibrated in PVT variation, introduces the correction system based on two-point method in power detecting system of the invention
System, especially gives a kind of novel calibration system using direct current DC adder, millimeter wave chip belt can be reduced by changing circuit
Bring measurement error due to power supply, voltage, change in process temperature.
[Detailed description of the invention]
The present invention is further described with reference to the accompanying drawings and detailed description.
Fig. 1 is the system of prime power detector.
Fig. 2 is the PSS result with technological temperature mains voltage variations.
The position Fig. 3 novel calibration system proposed by the present invention.
Fig. 4 is the PSS result with technological temperature mains voltage variations of present system measurement.
[specific embodiment]
To keep the purpose of the present invention, technical method and advantage more clear, below by accompanying drawings and embodiments, to this
Invention is further elaborated.However, it should be understood that the specific embodiments described herein are merely illustrative of the present invention,
The range being not intended to restrict the invention.In addition, in the following description, descriptions of well-known structures and technologies are omitted, to keep away
Exempt from unnecessarily to obscure idea of the invention.
As shown in figure 3, a kind of novel power detecting system for millimeter wave chip belt PVT variation calibration circuit, and it is special
Sign is, comprising main power detector 1, secondary power detector 21, secondary power detector 22, the pair power detector 21 and pair
Power detector 22 loads on the biasing circuit of main power detector 1, forms main calibration circuit；The pair power detector 21
It is connect by bias-voltage generating circuit with the main power detector 1 with secondary power detector 22, forms auxiliary calibration circuit.
Further, which is characterized in that the main power detector module includes main attack rate detector 1, rf inputs
RF1, DC output end DC1, bias voltage signal N channel input terminal NBIAS1, bias voltage signal P channel input terminal PBIAS1；
Further, which is characterized in that pair 21 module of power detector includes secondary power detector 21, operation amplifier
Device OPA21, rf inputs RF21, DC output end DC21, bias voltage signal N channel input terminal NBIAS21, bias voltage signal P are logical
Road input terminal PBIAS21；Pair 22 module of power detector includes secondary power detector 22, operational amplifier OPA22, radio frequency
Input terminal RF22, DC output end DC22, bias voltage signal N channel input terminal NBIAS22, bias voltage signal P channel input terminal
PBIAS22。
Further, which is characterized in that the end NBIAS21 of the pair power detector 21 and the output end of adder Vadd
The end DC21 of connection, the pair power detector 21 is electrically connected with the positive input of the operational amplifier OPA21, the pair power
The PBIAS21 of detector 21 is connect with the end the bias voltage signal P channel input terminal PBIAS1 of the main power detector, described
The negative input of operational amplifier OPA21 is electrically connected with Vlo input, the output of the operational amplifier OPA21 and the main power
The bias voltage signal P channel end input terminal PBIAS21 of detector connects；It is described pair power detector 22 the end NBIAS22 with
The connection of adder Vadd input terminal, the end DC22 of the pair power detector 22 and the positive input of the operational amplifier OPA22
Electrical connection, the PBIAS22 of the pair power detector 22 and the bias voltage signal P channel of the main power detector 1 input
The connection of the end PBIAS1 is held, the negative input of the operational amplifier OPA21 is electrically connected with Vhi input.
The effect of secondary power detector 22 and corresponding operational amplifier OPA22 is, when main power detector RF input is
When zero, no matter how PVT changes, the D/C voltage that main power detector is exported is stablized in 900mV.And 21 He of secondary power detector
When corresponding operational amplifier OPA21 is by some RF signal power, DC output voltage is stablized in 200mV.So that output electricity
The both ends of pressure and input power relation curve are fixed, so that the influence very little of PVT variation.
NBIAS and PBIAS is generated by calibration circuit, and two secondary power detectors are inputted without RF signal.Secondary power inspection
The DC output for surveying device 22 is connected to the positive input of operational amplifier OPA22, and auxiliary input is the DC voltage source of 900mV, the output of amplifier
Generate the NBIAS voltage of main power detector and secondary power detector 22.The output voltage adds 150mV by voltage adder
The NBIAS of secondary power detector 21 is generated, the DC output of secondary power detector 21 is being connected to another operational amplifier OPA21 just
Input, the negative input of the operational amplifier are the DC power supply of 200mV, and output generates the PBIAS of three power amplifiers.
Since when main amplifier 1RF input is zero, the NBIAS and PBIAS of main power detector 1 and secondary power detector
Value it is the same.Two power detector states are the same, so output dc voltage is the same.
If front is analyzed, when main power detector has RF input signal, the electric current of main power detector:
And the electric current of secondary power detector one are as follows:
Main power detector as the load of secondary power detector, when RF input increases to a certain power, have IDS1
=IDS2.The DC output voltage of main power detector will be fixed on 200mV at this time.
It is added after calibration circuit, with the PSS result of technological temperature mains voltage variations as shown in figure 4, by adjusting VADD
Size, relation curve can be made to move left and right, thus make power detector work arrived in input signal power -10dBm
In the range of 10dBm.
Beneficial effects of the present invention: compared with prior art, invention provides a kind of novel for millimeter wave chip belt PVT
The power detecting system of circuit is calibrated in variation, introduces the correction system based on two-point method in power detecting system of the invention,
A kind of novel calibration system using direct current DC adder is especially given, millimeter wave chip belt can be reduced because of electricity by changing circuit
Source, voltage, change in process temperature and bring measurement error.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modification, equivalent replacement or improvement etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (5)
1. a kind of power-sensing circuit for changing calibration circuit for millimeter wave chip belt PVT, which is characterized in that include main power
Detector 1, secondary power detector 21 and p pipe bias-voltage generating circuit, secondary power detector 22 and n pipe bias voltage produce
Raw circuit, the p pipe bias-voltage generating circuit and n pipe bias-voltage generating circuit institute are at the bias voltage load of generation in master
On power detector 1, main calibration circuit is formed；The pair power detector 21 and secondary power detector 22 are produced by bias voltage
Raw circuit is connect with the main power detector 1, forms auxiliary calibration circuit.
2. power-sensing circuit according to claim 1, which is characterized in that the main power detector module includes main attack
Rate amplifier 1, rf inputs RF1, DC output end DC1, bias voltage signal N channel input terminal NBIAS1, bias voltage signal P channel
Input terminal PBIAS1.
3. power-sensing circuit according to claim 1, which is characterized in that the pair power amplifier 21 and the biasing of p pipe
Voltage generation circuit include secondary power amplifier 21, operational amplifier OPA21, rf inputs RF21, DC output end DC21,
Bias voltage signal N channel input terminal NBIAS21, bias voltage signal P channel input terminal PBIAS21；The pair power amplifier 22 and n pipe
Bias-voltage generating circuit includes power amplifier 22, operational amplifier OPA22, rf inputs RF22, DC output end
DC22, bias voltage signal N channel input terminal NBIAS22, bias voltage signal P channel input terminal PBIAS22.
4. power-sensing circuit according to claim 2, which is characterized in that the NBIAS21 of the pair power detector 21
End is electrically connected with the positive input of Vadd, and the end DC21 of the secondary power detector 21 is just defeated with the operational amplifier OPA21's
Enter electrical connection, the PBIAS21 of the pair power detector 21 and the bias voltage signal P channel of the main power detector input
The connection of the end PBIAS1 is held, the negative input of the operational amplifier OPA21 is electrically connected with low reference voltage Vlo input, the operation
The output of amplifier OPA21 is connect with the end the bias voltage signal P channel input terminal PBIAS21 of the main power detector；Institute
The end NBIAS22 for stating secondary power detector 22 is electrically connected with Vadd negative input, the end DC22 of the pair power detector 22 and institute
State the positive input electrical connection of operational amplifier OPA22, the PBIAS22 and the main power detector of the pair power detector 22
The bias voltage signal P channel end input terminal PBIAS1 connection, the negative input and high reference voltage of the operational amplifier OPA21
Vhi input electrical connection.
5. power-sensing circuit according to claim 3, which is characterized in that the input signal of main power detector 1 is set,
Meet main power detector current value:
The electric current of secondary power detector 21 is
Wherein:
ID0It is a current constant relevant to technique,
W/L is the breadth length ratio of pipe,
N is a constant relevant to depletion layer characteristic,
VTIt is thermal voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910006923.0A CN109782056B (en) | 2019-01-04 | 2019-01-04 | Power detection system for millimeter wave chip band PVT change calibration circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910006923.0A CN109782056B (en) | 2019-01-04 | 2019-01-04 | Power detection system for millimeter wave chip band PVT change calibration circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109782056A true CN109782056A (en) | 2019-05-21 |
| CN109782056B CN109782056B (en) | 2021-08-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910006923.0A Active CN109782056B (en) | 2019-01-04 | 2019-01-04 | Power detection system for millimeter wave chip band PVT change calibration circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112782466A (en) * | 2020-12-28 | 2021-05-11 | 新郦璞科技(上海)有限公司 | Digital auxiliary calibration RMS power detection method and system |
| CN113848380A (en) * | 2021-10-22 | 2021-12-28 | 深圳市兆驰数码科技股份有限公司 | Power detection circuit and method, and direct current and phase detection system and method |
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| CN113848380A (en) * | 2021-10-22 | 2021-12-28 | 深圳市兆驰数码科技股份有限公司 | Power detection circuit and method, and direct current and phase detection system and method |
| CN113848380B (en) * | 2021-10-22 | 2023-10-20 | 深圳市兆驰数码科技股份有限公司 | Power detection circuit and method, and direct current and phase detection system and method |
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