CN109768772A - Minimize high efficiency X-band power amplifier module and preparation method thereof - Google Patents
Minimize high efficiency X-band power amplifier module and preparation method thereof Download PDFInfo
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- CN109768772A CN109768772A CN201811552545.8A CN201811552545A CN109768772A CN 109768772 A CN109768772 A CN 109768772A CN 201811552545 A CN201811552545 A CN 201811552545A CN 109768772 A CN109768772 A CN 109768772A
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- amplifier
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Abstract
The invention discloses a kind of miniaturization high efficiency X-band power amplifier module, which includes sequentially connected promotion grade amplifier, intervalve matching circuit and final amplifier；Wherein, the input terminal for pushing grade amplifier is connected with radio frequency input, and the output end of the final amplifier is radio frequency output；The promotion grade amplifier provides forward gain for amplification module and pushes power output；The final amplifier provides final stage gain and signal is amplified to required size and exports；The intervalve matching circuit makes that grade amplifier and final amplifier is pushed to be in traveling-wave mode.The miniaturization high efficiency X-band power amplifier module design method can realize the amplification of X-band signal.
Description
Technical field
The present invention relates to miniaturization power amplifier design, and in particular, to miniaturization high efficiency X-band power amplifier module and its
Production method.
Background technique
Connectors for Active Phased Array Radar relative to traditional system radar superiority it is well known that not with national defence growth requirement
Disconnected to improve, many radars are gradually changed into the technology using phased array, especially multifunctional active phased array thunder by traditional system
It reaches, opens a kind of new approach using its significant technical characterstic and huge potential advantages as the development of modern radar, become
The mainstream of current radar development.Identical Receiver And Transmitter is at array arrangement, quantity in phased array radar
It is very big, often up to thousands of.Therefore, to mitigate self weight, complete machine load pressure is reduced, phased-array radar is to wherein each microwave
The miniaturization of device, light-weighted requirement are often higher.The power amplifier module that the present invention develops is sent out with Mr. Yu's model phased-array radar
Machine is penetrated, complete machine user proposes higher requirement to its electrical property and volume.
Therefore, comprehensive consideration technical indicator and close structure, circuit design must use MCM technology, this is also current
The process routes of mainstream are a kind of microelectronics assewblies realizing electronic assemblies miniaturization, lightweight, high-performance and low cost and integrating
Technology.
Summary of the invention
The object of the present invention is to provide a kind of miniaturization high efficiency X-band power amplifier module design method, the miniaturization is efficient
Rate X-band power amplifier module design method can realize the amplification of X-band signal.
To achieve the goals above, the present invention provides a kind of miniaturization high efficiency X-band power amplifier module, the miniaturization is high
Efficiency X-band power amplifier module includes sequentially connected promotion grade amplifier, intervalve matching circuit and final amplifier；Wherein, institute
It states and the input terminal of grade amplifier is pushed to be connected with radio frequency input, the output end of the final amplifier is radio frequency output；It is described to push away
Dynamic grade amplifier provides forward gain for amplification module and pushes power output；The final amplifier provides final stage gain and will
Signal is amplified to required size output；The intervalve matching circuit makes that grade amplifier and final amplifier is pushed to be in traveling wave shape
State.
Preferably, miniaturization high efficiency X-band power amplifier module further include: feed circuit, the feed circuit are connected to
The input terminal for pushing grade amplifier and the final amplifier, the feed circuit are also attached to the final amplifier
Output end, to provide bias voltage respectively for promotion grade amplifier and the final amplifier.
Preferably, the miniaturization high efficiency X-band power amplifier module further include: shielding cavity, between the promotion grade amplifier, grade
Match circuit and final amplifier are fixed in the shielding cavity.
Preferably, the length of the shielding cavity is 50mm, width 13.5mm, is highly 6mm.
Preferably, the promotion grade amplifier is made of the monolithic integrated microwave circuit made based on GaN technique.
Preferably, the material of the shielding cavity is brass, and in outer surface gold-plating.
The present invention provides a kind of production method for minimizing high efficiency X-band power amplifier module, the miniaturization high efficiency X-band
Power amplifier module production method includes:
Step 1, grade amplifier, intervalve matching circuit and final amplifier will be pushed to be sequentially connected and connect, and is packaged in shielding
In chamber；
Step 2, on the tester rack by shielding cavity installation, and tester is connected to by sub-miniature A connector；
Step 3, in the case where test passes, X-band power amplifier module is obtained.
Preferably, sub-miniature A connector is fixed on the tester rack.
According to the above technical scheme, the present invention verifies the design theory, efficient to miniaturization designed according to this invention
Rate X-band power amplifier module is tested, and is surveyed as a result, working frequency is in the range of 9GHz to 10GHz, of the invention is defeated
Power is 47.53dB out.With the circuit, it can be achieved that the signal of the X-band signal of tight space amplifies transmitting.
Other features and advantages of the present invention will the following detailed description will be given in the detailed implementation section.
Detailed description of the invention
The drawings are intended to provide a further understanding of the invention, and constitutes part of specification, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the schematic block circuit diagram for illustrating a kind of miniaturization high efficiency X-band power amplifier module of the invention；
Fig. 2 is to illustrate that a kind of topology of the intervalve matching circuit of miniaturization high efficiency X-band power amplifier module of the invention is shown
It is intended to；
Fig. 3 is the feed circuit topology schematic diagram for illustrating a kind of miniaturization high efficiency X-band power amplifier module of the invention；
Fig. 4 is to illustrate a kind of bleeder circuit topology schematic diagram of the invention；
Fig. 5 is to illustrate a kind of decoupling circuit topology schematic diagram of the invention；
Fig. 6 is to illustrate a kind of power amplifier assembling schematic diagram of the invention；
Fig. 7 is to illustrate a kind of testing jig schematic diagram of the invention；And
Fig. 8 is to illustrate a kind of power amplifier and testing jig assembling schematic diagram of the invention.
Specific embodiment
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
The present invention provides a kind of miniaturization high efficiency X-band power amplifier module, the miniaturization high efficiency X-band power amplifier module packet
Include sequentially connected promotion grade amplifier, intervalve matching circuit and final amplifier；Wherein, the input for pushing grade amplifier
End is connected with radio frequency input, and the output end of the final amplifier is radio frequency output；The promotion grade amplifier is amplification module
Forward gain is provided and pushes power output；The final amplifier provides final stage gain and that signal is amplified to required size is defeated
Out；The intervalve matching circuit makes that grade amplifier and final amplifier is pushed to be in traveling-wave mode.
Core of the invention is that power amplifier, power amplifier include pushing grade amplifier, final amplifier, interstage matched
Circuit, feed circuit, bleeder circuit and decoupling circuit.The power amplifier module output power that the present invention produces is 50W or more, drain electrode
Efficiency is 40% or more.Power amplifier is packaged in the gold-plated shielding cavity of copper, forms circuit module, input and output are via micro-
Band line is connect by gold wire bonding with the external world.The present invention devises a kind of power amplifier modular circuit of X-band, can using the circuit
Realize that the signal of the X-band signal of tight space amplifies transmitting.
In a kind of specific embodiment of the invention, the miniaturization high efficiency X-band power amplifier module further include: feed electricity
Road, the feed circuit are connected to the input terminal for pushing grade amplifier and the final amplifier, and the feed circuit is also
It is connected to the output end of the final amplifier, to provide biased electrical respectively for promotion grade amplifier and the final amplifier
Pressure.
In a kind of specific embodiment of the invention, the miniaturization high efficiency X-band power amplifier module further include: shielding
Chamber, the promotion grade amplifier, intervalve matching circuit and final amplifier are fixed in the shielding cavity.
In this embodiment, the length of the shielding cavity is 50mm, width 13.5mm, is highly 6mm.
It is described to push grade amplifier by the monolithic that makes based on GaN technique in a kind of specific embodiment of the invention
Microwave integrated circuit composition.
In this embodiment, the material of the shielding cavity is brass, and in outer surface gold-plating.
The present invention also provides a kind of production method for minimizing high efficiency X-band power amplifier module, the miniaturization high efficiency X waves
Section power amplifier module production method include:
Step 1, grade amplifier, intervalve matching circuit and final amplifier will be pushed to be sequentially connected and connect, and is packaged in shielding
In chamber；
Step 2, on the tester rack by shielding cavity installation, and tester is connected to by sub-miniature A connector；
Step 3, in the case where test passes, X-band power amplifier module is obtained.
It is in a kind of specific embodiment of the invention, sub-miniature A connector is fixed on the tester rack.
Push grade amplifier by monolithic integrated microwave circuit (MMIC) group for making based on GaN technique in the power amplifier
At the circuit is saturated defeated by the 13rd Research Institute of China Electronic Science and Technology Corporation, model BW255, gain 20dB
Power is 30dBm out.
Final amplifier is made of the high electron mobility transistor (HEMT) based on GaN technique in the power amplifier,
That the transistor is selected is the transistor of the 13rd research institute, China Electronic Science and Technology Corporation, model NC11619C-812P50.
The amplifier gain made is 20dB, and saturation output power is up to 48dBm.
Intervalve matching circuit in the power amplifier is branch nodel line distributed constant circuit, and circuit topology is as shown in Figure 2.
Feed circuit in the power amplifier is the hybrid circuit of distribution parameter and lumped parameter composition, circuit topology
As shown in Figure 3.
Bleeder circuit in the power amplifier is lumped circuit, and circuit topology is as shown in Figure 4.
Decoupling circuit in the power amplifier is lumped circuit, and circuit topology is as shown in Figure 5.
The test fixture length is 90mm, width 40mm, and height (including sub-miniature A connector) is 16.85mm, sub-miniature A connector
Model SMA-KFD113.
The spun gold diameter is 0.0254mm, and length is no longer than 1mm.
The material of the shielding cavity is brass, and surface gold-plating, surface smoothness is less than 3.2.
The beneficial effects of the present invention are: a kind of efficient power amplifier mould of miniaturization for working in X-band provided by the invention
Block circuit, using the circuit, it can be achieved that X-band signal amplification.
Below in conjunction with Figure of description, the present invention is further illustrated.
A kind of miniaturization high efficiency X-band power amplifier module design, including shielding cavity 1, power amplifier 2 are (comprising pushing grade to put
Big device 3, final amplifier 4, intervalve matching circuit 5, feed circuit 6, bleeder circuit 7 and decoupling circuit 8), testing jig 9 (include
Sub-miniature A connector 10)；The promotion grade amplifier 3, final amplifier 4, intervalve matching circuit 5, feed circuit 6, bleeder circuit 7 and
Decoupling circuit 8 is produced on same circuit board, and is fixed in shielding cavity 1.The testing jig 9 is assembled with two SMA and connects
First 10 when testing in testing meter and instrument for interconnecting.On the tester rack, input and output connect for the installation of shielding cavity 1
Mouth and power-up interface pass through gold wire bonding and interconnect.
Further:
The length of the shielding cavity is 50mm, width 13.5mm, is highly 6mm.
Push grade amplifier by monolithic integrated microwave circuit (MMIC) group for making based on GaN technique in the power amplifier
At the circuit is saturated defeated by the 13rd Research Institute of China Electronic Science and Technology Corporation, model BW255, gain 20dB
Power is 30dBm out.
Final amplifier is made of the high electron mobility transistor (HEMT) based on GaN technique in the power amplifier,
That the transistor is selected is the transistor of the 13rd research institute, China Electronic Science and Technology Corporation, model NC11619C-812P50.
The amplifier gain made is 20dB, and saturation output power is up to 48dBm.
Intervalve matching circuit in the power amplifier is branch nodel line distributed constant circuit, and circuit topology is as shown in Figure 2.
Feed circuit in the power amplifier is the hybrid circuit of distribution parameter and lumped parameter composition, circuit topology
As shown in Figure 3.
Bleeder circuit in the power amplifier is lumped circuit, and circuit topology is as shown in Figure 4.
Decoupling circuit in the power amplifier is lumped circuit, and circuit topology is as shown in Figure 5.
The test fixture length is 90mm, width 40mm, and height (including sub-miniature A connector) is 16.85mm, sub-miniature A connector
Model SMA-KFD113.
The spun gold diameter is 0.0254mm, and length is no longer than 1mm.
The material of the shielding cavity is brass, and surface gold-plating, surface smoothness is less than 3.2.
As shown in Fig. 6, grade amplifier 3, final amplifier 4, intervalve matching circuit 5, feed circuit are pushed in the present invention
6, bleeder circuit 7 and decoupling circuit 8 are produced on same circuit board, which is passed through together with component
Solder is sintered in shielding cavity 1, constitutes power amplifier 2.
Refering to Fig. 7, two sub-miniature A connectors 10 are fixed on testing jig 9 by the screw of 4 pieces of M2, and with soldering iron and scolding tin
The inner conductor of sub-miniature A connector 10 is welded on the circuit board of testing jig.
Refering to Fig. 8, power amplifier 2 is fixed on testing jig 9 by the screw of 3 pieces of M2, and is connected by gold wire bonding
Input/output interface and power-up interface.
The testing jig 9 for installing power amplifier 2 is connect with signal source 11, regulated power supply 12 and power meter 13, it can be complete
At the test of amplification module.
Wherein shielding cavity 1 is made of brass (H62), and surface gold-plating, smoothness requirements are less than 3.2.
In order to verify the design theory, miniaturization high efficiency X-band power amplifier module designed according to this invention is carried out
Test, as a result, working frequency is in the range of 9GHz to 10GHz, output power of the invention is 47.53dB for actual measurement.
It is described the prefered embodiments of the present invention in detail above in conjunction with attached drawing, still, the present invention is not limited to above-mentioned realities
The detail in mode is applied, within the scope of the technical concept of the present invention, a variety of letters can be carried out to technical solution of the present invention
Monotropic type, these simple variants all belong to the scope of protection of the present invention.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, can be combined in any appropriate way, in order to avoid unnecessary repetition, the present invention to it is various can
No further explanation will be given for the combination of energy.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally
The thought of invention, it should also be regarded as the disclosure of the present invention.
Claims (8)
1. a kind of miniaturization high efficiency X-band power amplifier module, which is characterized in that the miniaturization high efficiency X-band power amplifier module packet
Include sequentially connected promotion grade amplifier, intervalve matching circuit and final amplifier；Wherein, the input for pushing grade amplifier
End is connected with radio frequency input, and the output end of the final amplifier is radio frequency output；The promotion grade amplifier is amplification module
Forward gain is provided and pushes power output；The final amplifier provides final stage gain and that signal is amplified to required size is defeated
Out；The intervalve matching circuit makes that grade amplifier and final amplifier is pushed to be in traveling-wave mode.
2. miniaturization high efficiency X-band power amplifier module according to claim 1, which is characterized in that miniaturization high efficiency X
Wave band power amplifier module further include: feed circuit, the feed circuit are connected to the promotion grade amplifier and final stage amplification
The input terminal of device, the feed circuit are also attached to the output end of the final amplifier, with to push grade amplifier and described
Final amplifier provides bias voltage respectively.
3. miniaturization high efficiency X-band power amplifier module according to claim 1, which is characterized in that miniaturization high efficiency X
Wave band power amplifier module further include: shielding cavity, the promotion grade amplifier, intervalve matching circuit and final amplifier are fixed on described
In shielding cavity.
4. miniaturization high efficiency X-band power amplifier module according to claim 3, which is characterized in that the length of the shielding cavity
Degree is 50mm, width 13.5mm, is highly 6mm.
5. miniaturization high efficiency X-band power amplifier module according to claim 1, which is characterized in that the promotion grade amplification
Device is made of the monolithic integrated microwave circuit made based on GaN technique.
6. miniaturization high efficiency X-band power amplifier module according to claim 3, which is characterized in that the material of the shielding cavity
Material is brass, and in outer surface gold-plating.
7. a kind of production method for minimizing high efficiency X-band power amplifier module, which is characterized in that the miniaturization high efficiency X-band
Power amplifier module production method includes:
Step 1, grade amplifier, intervalve matching circuit and final amplifier will be pushed to be sequentially connected and connect, and be packaged in shielding cavity；
Step 2, on the tester rack by shielding cavity installation, and tester is connected to by sub-miniature A connector；
Step 3, in the case where test passes, X-band power amplifier module is obtained.
8. the production method of miniaturization high efficiency X-band power amplifier module according to claim 7, which is characterized in that by SMA
Connector is fixed on the tester rack.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811552545.8A CN109768772A (en) | 2018-12-19 | 2018-12-19 | Minimize high efficiency X-band power amplifier module and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811552545.8A CN109768772A (en) | 2018-12-19 | 2018-12-19 | Minimize high efficiency X-band power amplifier module and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109768772A true CN109768772A (en) | 2019-05-17 |
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| CN201811552545.8A Withdrawn CN109768772A (en) | 2018-12-19 | 2018-12-19 | Minimize high efficiency X-band power amplifier module and preparation method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202550974U (en) * | 2012-04-26 | 2012-11-21 | 成都六三零电子设备有限公司 | P-band 200W power amplifier |
| CN203387469U (en) * | 2013-07-31 | 2014-01-08 | 南京信息工程大学 | X waveband low noise amplifier |
| CN206023711U (en) * | 2016-06-29 | 2017-03-15 | 安徽华东光电技术研究所 | A kind of C-band power amplifier module and its testing jig |
| CN206099913U (en) * | 2016-04-14 | 2017-04-12 | 安徽华东光电技术研究所 | Solid -state power amplifier circuit of X wave band broadband fixed ampllitude |
| CN207543074U (en) * | 2017-09-29 | 2018-06-26 | 安徽华东光电产业研究院有限公司 | A kind of Ku wave bands amplifying circuit |
-
2018
- 2018-12-19 CN CN201811552545.8A patent/CN109768772A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202550974U (en) * | 2012-04-26 | 2012-11-21 | 成都六三零电子设备有限公司 | P-band 200W power amplifier |
| CN203387469U (en) * | 2013-07-31 | 2014-01-08 | 南京信息工程大学 | X waveband low noise amplifier |
| CN206099913U (en) * | 2016-04-14 | 2017-04-12 | 安徽华东光电技术研究所 | Solid -state power amplifier circuit of X wave band broadband fixed ampllitude |
| CN206023711U (en) * | 2016-06-29 | 2017-03-15 | 安徽华东光电技术研究所 | A kind of C-band power amplifier module and its testing jig |
| CN207543074U (en) * | 2017-09-29 | 2018-06-26 | 安徽华东光电产业研究院有限公司 | A kind of Ku wave bands amplifying circuit |
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Application publication date: 20190517 |