CN206164478U - Solid -state power amplifier of ultra wide band - Google Patents
Solid -state power amplifier of ultra wide band Download PDFInfo
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- CN206164478U CN206164478U CN201621236918.7U CN201621236918U CN206164478U CN 206164478 U CN206164478 U CN 206164478U CN 201621236918 U CN201621236918 U CN 201621236918U CN 206164478 U CN206164478 U CN 206164478U
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- module
- shielding box
- power amplifier
- power
- box body
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Abstract
The utility model discloses a solid -state power amplifier of ultra wide band, including the shielding case with set up in the inside power amplifier circuit module of shielding case, the side of shielding case is provided with microwave signal input terminal, microwave signal output terminal and makes can control the direct current bias voltage input terminal, the power amplifier circuit module includes power control circuit unit and microwave circuit unit, the microwave circuit unit enlargies module, power amplification module, one fen four merit and divides the module and four unify merit compound die pieces including promoting to enlarge module, drive, inside first shielding box body, secondary shielding box body and the third shielding box body of being equipped with of shielding case promotes to amplify the module and lies in the internal portion of first shielding case, and the drive is amplified inside the module lies in the secondary shielding box body, four power amplification modules, one fen four merit branch module and four unify merit compound die pieces and lie in the internal portion of third shielding case. The utility model has the advantages of simple structure, the effective bandwidth broad, output is big, and job stabilization is reliable.
Description
Technical field
The utility model is related to technical field of micro communication, more particularly to a kind of UWB Solid State Power Amplifier.
Background technology
With the development of semiconductor technology and digital communication technology, various wireless communication technology is occurred in that in recent years.At this
In a little new technologies, UWB (ultra broadband) technology is a kind of wireless technology of high speed transmission data in very advantageous short distance.
Used as the pith of UWB transmitting sets, the research of distributed power amplifier receives the concern of people.
Traditional distributed power amplifier all adopts traveling wave tube power amplifier substantially（TWTA）, travelling-wave tubes power amplifier has
Output power（Ku frequency ranges can arrive 2KW, C frequency range and can arrive 3KW）, band of operation width（Generally 750MHz, it is expansible
To 1250MHz）, efficiency high（25% or so can typically be reached）The features such as, it is current solid-state power amplifier（SSPA）It is difficult to reach
The performance indications for arriving.But travelling-wave tubes power amplifier shortcoming compared with solid state power amplifier is obvious, and such as service life is short, power during multicarrier operation
Rollback is big, simultaneously as traveling wave tube power amplifier belongs to radio tube amplifier, it is operated in hyperbaric environment, its work
The reliability of work, less stable, and be easily damaged, cannot repair after damage, cause the serious waste of resource.Therefore it is current anxious
A kind of ultra broadband solid-state high power amplifier is needed to substitute travelling-wave tube amplifier.
The content of the invention
Technical problem to be solved in the utility model is to provide a kind of ultra broadband for above-mentioned the deficiencies in the prior art to consolidate
State power amplifier, this UWB Solid State Power Amplifier has simple structure, and effective bandwidth is wider, high gain, power output
Greatly, stable and reliable in work the advantages of.
To realize above-mentioned technical purpose, the technical scheme that the utility model is taken is：
A kind of UWB Solid State Power Amplifier, including shielding box and the power amplifier circuit being arranged on inside shielding box
Module, the side of the shielding box is provided with microwave signal input terminal, microwave signal lead-out terminal and to enable control direct current inclined
Voltage input-terminal is put, the power amplifier circuit module includes power control circuit unit and microwave circuit unit, described
Microwave circuit unit includes promoting amplification module, drive amplification module, four power amplifier modules, one point of four work(sub-module and four
Unification work(matched moulds block；The inside of the shielding box is provided with the first shielding box body, secondary shielding box body and the 3rd shielding box body, described
Amplification module is promoted to be located at the inside of the first shielding box body, the drive amplification module is located at secondary shielding tray interior, described
Four power amplifier modules, one point of four work(sub-module and four-in-one work(matched moulds block are located at the 3rd shielding tray interior, the promotion
Amplification module includes driving amplifier, and the drive amplification module includes driving amplifier, and the power amplifier module includes work(
Rate amplifier；Wherein the amplification chip of driving amplifier be the high-power amplification chip of high-gain, the amplification chip of driving amplifier
For high-gain small-power amplification chip, the amplification chip of power amplifier is high power amplification chip；
The control DC offset voltage input terminal that enables is connected with power control circuit unit, the power supply electricity
Road unit is connected respectively with amplification module, drive amplification module and power amplifier module is promoted, the microwave signal input terminal
With it is described promotion amplification module be connected, it is described promotion amplification module be connected with drive amplification module, the drive amplification module and
One point of four work(sub-module connection, one point of four work(sub-module is connected respectively with four power amplifier modules, four power
Amplification module is connected with four-in-one work(matched moulds block, and the four-in-one work(matched moulds block is connected with the microwave signal lead-out terminal,
Connected by isolation resistance between the adjacent output end of one point of four work(sub-module, the phase of the four-in-one work(matched moulds block
Connected by isolation resistance between adjacent input, the isolation resistance adopts cvd diamond substrate.
Used as the further improved technical scheme of the utility model, the power control circuit unit includes power switch control
Circuit processed and Power convert filter circuit, the enable control DC offset voltage input terminal connects with power on-off control circuit
Connect, the power on-off control circuit is connected respectively with the power amplifier module and Power convert filter circuit, the power supply
Switched filter circuit is connected respectively with amplification module and drive amplification module is promoted.
Used as the further improved technical scheme of the utility model, the enable control DC offset voltage input terminal is adopted
With rectangular connector, the shell of the rectangular connector is using zinc white copper material.
Used as the further improved technical scheme of the utility model, the microwave signal input terminal and microwave signal are exported
Terminal adopts SMA connectors.
As the further improved technical scheme of the utility model, one point of four work(sub-module and four-in-one work(matched moulds block
Adopt flat board microstrip structure.
As the further improved technical scheme of the utility model, one point of four work(sub-module by three one-to-two work(
Rate distributor is formed by connecting, and the four-in-one work(matched moulds block is formed by connecting by three two-in-one power combiners.
As the further improved technical scheme of the utility model, the shielding box, the first shielding box body, secondary shielding box
Body and the 3rd shielding box body are using red copper material and inner surface is gold-plated.
Used as the further improved technical scheme of the utility model, the side of the shielding box is provided with ground terminal, described
Ground terminal is electrically connected respectively with shielding box body, the first shielding box body, secondary shielding box body and the 3rd shielding box body, the ground connection
Terminal adopts M3 earthing rods and surface gold-plating.
As the further improved technical scheme of the utility model, also including the first molybdenum copper pedestal and the second molybdenum copper pedestal,
Amplification chip in the driving amplifier is sintered on the first molybdenum copper pedestal by lead-free solder, and the first molybdenum copper pedestal leads to
Cross the inner surface that lead-free solder is sintered to secondary shielding box body；Amplification chip in the power amplifier is burnt by lead-free solder
Tie on the second molybdenum copper pedestal, the second molybdenum copper pedestal is sintered to the inner surface of the 3rd shielding box body using lead-free solder.I.e.
Realize the amplification chip in the amplification chip and power amplifier in driving amplifier and adequately grounded, again reach good dissipating
Heat.
The beneficial effects of the utility model are：Put using one point of four work(sub-module, four-in-one work(matched moulds block and four power
Big module, therefore output power, power back off is little, substitutes traditional traveling wave tube power amplifier, efficiently solves travelling-wave tubes
The shortcomings of power amplifier, are connected, four-in-one between the adjacent output end of one point of four work(sub-module by isolation resistance
Connected by isolation resistance between the adjacent input of work(matched moulds block, that is, realize miniaturization, turn avoid crosstalk reflection between road,
Point chamber design of the first shielding box body, secondary shielding box body and the 3rd shielding box body it also avoid the crosstalk between amplifiers at different levels
Interference, has reached power stability output, overcomes traveling wave tube power amplifier and is operated in the reliability, steady worked in hyperbaric environment
Qualitative poor shortcoming；Isolation resistance adopts cvd diamond substrate, that is, realizing firmly should not damage, again being capable of good heat radiating；This
Utility model compact overall structure, stable output signal reliability, working band width, long service life.
Description of the drawings
Fig. 1 is circuit theory schematic diagram of the present utility model.
Fig. 2 is the circuit theory schematic diagram of one point of four work(sub-module of the present utility model and four-in-one work(matched moulds block.
Fig. 3 is the sintering structure of the amplification chip of the amplification chip of driving amplifier of the present utility model or power amplifier
Schematic diagram.
Specific embodiment
Specific embodiment of the present utility model is further illustrated below according to Fig. 1 to Fig. 3：
Referring to Fig. 1, a kind of UWB Solid State Power Amplifier, including shielding box and the power that is arranged on inside shielding box puts
Big device circuit module, the side of the shielding box is provided with microwave signal input terminal, microwave signal lead-out terminal and enables control
DC offset voltage input terminal processed, the power amplifier circuit module includes power control circuit unit and microwave circuit list
Unit, the microwave circuit unit includes promoting amplification module, drive amplification module, four power amplifier modules, one point of four work(point
Module and four-in-one work(matched moulds block；The control DC offset voltage input terminal that enables is connected with power control circuit unit,
The power control circuit unit is connected respectively with amplification module, drive amplification module and power amplifier module is promoted, described micro-
Ripple signal input terminal is connected with the promotion amplification module, and the promotion amplification module is connected with drive amplification module, described
Drive amplification module is connected with one point of four work(sub-module, and one point of four work(sub-module connects respectively with four power amplifier modules
Connect, four power amplifier modules are connected with four-in-one work(matched moulds block, and the four-in-one work(matched moulds block is believed with the microwave
The connection of number lead-out terminal, is connected, described four between the adjacent output end of one point of four work(sub-module by isolation resistance 6
Connected by isolation resistance 6 between the adjacent input of unification work(matched moulds block, the isolation resistance 6 individually adopts diamond
Substrate.The inside of the shielding box is provided with the first shielding box body, the shielding box body of secondary shielding box body 4 and the 3rd, and the promotion is put
Big module is located at the inside of the first shielding box body, and the drive amplification module is located inside secondary shielding box body 4, four work(
Rate amplification module, one point of four work(sub-module and four-in-one work(matched moulds block are located at the 3rd shielding tray interior, and mould is amplified in the promotion
Block includes driving amplifier, and the drive amplification module includes driving amplifier, and the power amplifier module includes power amplification
Device；Wherein the amplification chip of driving amplifier is the high-power amplification chip of high-gain, and the amplification chip of driving amplifier is high increasing
Beneficial small-power amplification chip, the amplification chip of power amplifier is high power amplification chip.
In the present embodiment, the power control circuit unit includes power on-off control circuit and Power convert filtered electrical
Road, the enable control DC offset voltage input terminal is connected with power on-off control circuit, the power switch control electricity
Road is connected respectively with the power amplifier module and Power convert filter circuit, the Power convert filter circuit respectively with promotion
Amplification module and drive amplification module connect.
In the present embodiment, the control DC offset voltage input terminal that enables adopts rectangular connector J131-9-TJ-A,
The shell of the rectangular connector J131-9-TJ-A adopts zinc white copper material.Enable control DC offset voltage input terminal defeated
The signal for entering is direct Jing after power on-off control circuit in power control circuit unit and Power convert filter circuit are processed successively
DC offset voltage is provided to the promotion amplification module in microwave circuit unit and drive amplification module.
In the present embodiment, the microwave signal input terminal and microwave signal lead-out terminal adopt SMA connectors.Can be with
With existing packfong SMA connector D330S12F06.
In the present embodiment, one point of four work(sub-module and four-in-one work(matched moulds block adopt flat board microstrip structure.
In the present embodiment, as shown in Fig. 2 one point of four work(sub-module is connected by the power divider 5 of three one-to-two
Form, two output ends of the power divider 5 of one-to-two respectively with the input of the power divider 5 of other two one-to-two
Connection, two output ends of the power divider 5 of other two one-to-two connect respectively with the input of four power amplifier modules 8
Connect, two output ends of the power divider 5 of three one-to-two are connected by isolation resistance 6；The four-in-one work(matched moulds block by
Three two-in-one power combiners 7 are formed by connecting, as shown in Fig. 2 two inputs difference of two-in-one power combiner 7
The output end of the power combiner 7 two-in-one with other two is connected, the input of the two-in-one power combiner 7 of other two
It is connected with the output end of four power amplifier modules 8, two inputs of two-in-one power combiner 7 pass through isolation resistance 6
Connection, the isolation resistance 6 individually adopts cvd diamond substrate, the pin of the isolation resistance 6 and two-in-one power combiner 7
Pin and one-to-two power divider 5 pin between by gold thread connect.
In the present embodiment, the shielding box, the first shielding box body, the shielding box body of secondary shielding box body 4 and the 3rd are using purple
Copper material and inner surface is gold-plated.
In the present embodiment, the side of the shielding box is provided with ground terminal, the ground terminal respectively with shielding box body, the
One shielding box body, secondary shielding box body 4 and the 3rd shielding box body electrical connection, realize shielding box body, first shielding box body, second
Shielding box body 4 and the 3rd shields the ground connection of box body, and the ground terminal adopts M3 earthing rods and surface gold-plating, anti-oxidation.
In the present embodiment, referring to Fig. 3, also including the first molybdenum copper pedestal 3 and the second molybdenum copper pedestal, the driving amplifier
The bottom land of amplification chip 1 is sintered on the first molybdenum copper pedestal 3 by lead-free solder 2 and using seamless sintering technology, described
First molybdenum copper pedestal 3 is sintered to the inner surface of secondary shielding box body 4 by lead-free solder 2 and using seamless sintering technology；It is described
The bottom land of the amplification chip of power amplifier is sintered to the second molybdenum copper bottom by lead-free solder 2 and using seamless sintering technology
On seat, the second molybdenum copper pedestal is sintered to the interior table of the 3rd shielding box body using lead-free solder 2 and using seamless sintering technology
Face.The amplification chip of the amplification chip 1 and power amplifier that realize driving amplifier adequately grounded, has again reached well
Radiating.The first molybdenum copper pedestal 3 and the second molybdenum copper pedestal are 0.8cm.The amplification chip 1 of the driving amplifier and power
The amplification chip of amplifier is bare chip.
Operationally, power on-off control circuit includes negative pressure protection circuit and enables control circuit the utility model, directly
Stream service voltage signal input（DC IN）DC offset voltage input terminal is controlled to enabling, and then by enabling control direct current
Bias voltage input sends voltage signal to the input of power on-off control circuit, and power on-off control circuit is born
The direct current supply of four power amplifier modules will be all the way sent to after pressure protection and enable control in the voltage signal of output
So as to power for power amplifier module, Power convert filter circuit includes DC/DC converters and LC filter circuits, DC/ to input
DC converters turn DC+7V circuits using DC+24V, another road in the voltage signal that power on-off control circuit exports itself
DC/DC converters and LC filter circuits are transmitted a signal to successively, and LC filter circuits output two paths of signals arrives respectively promotion and amplifies mould
The direct current supply input of block and the direct current of drive amplification module supply input so as to provide electric energy, and microwave signal is through microwave
Signal input terminal is input into（RF IN）Afterwards successively Jing promote amplification module, drive amplification module, one point of four work(sub-module, four
HIGH-POWERED MICROWAVES signal is exported after power amplifier module and four-in-one work(matched moulds block（RF OUT）.
It is proven, using the UWB Solid State Power Amplifier of the present embodiment following technical indicator is capable of achieving：
(1), operating temperature：- 40 DEG C～+70 DEG C；
(2), storage temperature：- 55 DEG C～+85 DEG C；
(3), operating frequency：6～18GHz；
(4), input power：- 5～+5dBm；
(5), power output：>=100W ＆（6～12GHz）；>=80W ＆（12～14GHz）；
>=60W ＆（14～16GHz）；>=50W ＆（16～18GHz）；
(6), spurious reduction：≤-60dBc.
The utility model adopts one point of four work(sub-module, four-in-one work(matched moulds block and four power amplifier modules, therefore defeated
Go out power big, substitute traditional traveling wave tube power amplifier, efficiently solve the shortcomings of traveling wave tube power amplifier, one point
Connected by isolation resistance 6 between the adjacent output end of four work(sub-modules, the adjacent input of four-in-one work(matched moulds block it
Between connected by isolation resistance 6, that is, realize miniaturization, turn avoid between road crosstalk reflection, reached power stability output, overcome
Traveling wave tube power amplifier is operated in reliability, the shortcoming of less stable worked in hyperbaric environment；Isolation resistance 6 is adopted
Cvd diamond substrate, realizing firmly should not damage, life-span length；The utility model realizes the He of amplification chip 1 of driving amplifier
The amplification chip of power amplifier adequately grounded, has again reached good heat radiating；The utility model compact overall structure, signal is defeated
Go out reliable and stable, working band width, life-span length.
Protection domain of the present utility model includes but is not limited to embodiment of above, and protection domain of the present utility model is weighing
Sharp claim is defined, and any replacement being readily apparent that to those skilled in the art that this technology is made, deformation, improvement each fall within
Protection domain of the present utility model.
Claims (9)
1. a kind of UWB Solid State Power Amplifier, it is characterised in that：Including shielding box and the power being arranged on inside shielding box
Amplifier circuit module, the side of the shielding box is provided with microwave signal input terminal, microwave signal lead-out terminal and enable
Control DC offset voltage input terminal, the power amplifier circuit module includes power control circuit unit and microwave circuit
Unit, the microwave circuit unit includes promoting amplification module, drive amplification module, four power amplifier modules, one point of four work(
Sub-module and four-in-one work(matched moulds block；The inside of the shielding box is provided with the first shielding box body, secondary shielding box body and the 3rd screen
Box body is covered, the promotion amplification module is located at the inside of the first shielding box body, and the drive amplification module is located at secondary shielding box
Internal portion, four power amplifier modules, one point of four work(sub-module and four-in-one work(matched moulds block are located in the 3rd shielding box body
Portion, the promotion amplification module includes driving amplifier, and the drive amplification module includes driving amplifier, the power amplification
Module includes power amplifier；
The control DC offset voltage input terminal that enables is connected with power control circuit unit, the power control circuit list
Unit is connected respectively with amplification module, drive amplification module and power amplifier module is promoted, the microwave signal input terminal and institute
Promotion amplification module connection is stated, the promotion amplification module is connected with drive amplification module, the drive amplification module and one point
Four work(sub-modules connect, and one point of four work(sub-module is connected respectively with four power amplifier modules, four power amplifications
Module is connected with four-in-one work(matched moulds block, and the four-in-one work(matched moulds block is connected with the microwave signal lead-out terminal, described
Between the adjacent output end of one point of four work(sub-module by isolation resistance connect, the four-in-one work(matched moulds block it is adjacent
Connected by isolation resistance between input, the isolation resistance adopts cvd diamond substrate.
2. UWB Solid State Power Amplifier according to claim 1, it is characterised in that：The power control circuit unit
Including power on-off control circuit and Power convert filter circuit, the enable controls DC offset voltage input terminal and power supply
ON-OFF control circuit connect, the power on-off control circuit respectively with the power amplifier module and Power convert filter circuit
Connection, the Power convert filter circuit is connected respectively with amplification module and drive amplification module is promoted.
3. UWB Solid State Power Amplifier according to claim 2, it is characterised in that：It is described to enable control direct current biasing
Voltage input-terminal adopts the shell of rectangular connector, the rectangular connector to adopt zinc white copper material.
4. UWB Solid State Power Amplifier according to claim 1, it is characterised in that：The microwave signal input terminal
SMA connectors are adopted with microwave signal lead-out terminal.
5. UWB Solid State Power Amplifier according to claim 1, it is characterised in that：One point of four work(sub-module and
Four-in-one work(matched moulds block adopts flat board microstrip structure.
6. UWB Solid State Power Amplifier according to claim 1, it is characterised in that：One point of four work(sub-module by
The power divider of three one-to-two is formed by connecting, and the four-in-one work(matched moulds block is connected by three two-in-one power combiners
Connect and form.
7. UWB Solid State Power Amplifier according to claim 1, it is characterised in that：The shielding box, the first shielding
Box body, secondary shielding box body and the 3rd shield box body using red copper material and inner surface is gold-plated.
8. UWB Solid State Power Amplifier according to claim 7, it is characterised in that：The side of the shielding box is provided with
Ground terminal, the ground terminal is electric with shielding box body, the first shielding box body, secondary shielding box body and the 3rd shielding box body respectively
Connection, the ground terminal adopts M3 earthing rods and surface gold-plating.
9. UWB Solid State Power Amplifier according to claim 8, it is characterised in that：Also include the first molybdenum copper pedestal and
Second molybdenum copper pedestal, the amplification chip in the driving amplifier is sintered on the first molybdenum copper pedestal by lead-free solder, described
First molybdenum copper pedestal is sintered to the inner surface of secondary shielding box body by lead-free solder；Amplification chip in the power amplifier
It is sintered on the second molybdenum copper pedestal by lead-free solder, the second molybdenum copper pedestal is sintered to the 3rd shielding box using lead-free solder
The inner surface of body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621236918.7U CN206164478U (en) | 2016-11-18 | 2016-11-18 | Solid -state power amplifier of ultra wide band |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621236918.7U CN206164478U (en) | 2016-11-18 | 2016-11-18 | Solid -state power amplifier of ultra wide band |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206164478U true CN206164478U (en) | 2017-05-10 |
Family
ID=58660488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621236918.7U Active CN206164478U (en) | 2016-11-18 | 2016-11-18 | Solid -state power amplifier of ultra wide band |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206164478U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110708023A (en) * | 2019-09-30 | 2020-01-17 | 南京微通电子技术有限公司 | High-power ultra-bandwidth power amplifier |
| CN113702916A (en) * | 2021-06-24 | 2021-11-26 | 北京无线电测量研究所 | Compact 2-18GHz solid-state ultra-wideband transmitter |
-
2016
- 2016-11-18 CN CN201621236918.7U patent/CN206164478U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110708023A (en) * | 2019-09-30 | 2020-01-17 | 南京微通电子技术有限公司 | High-power ultra-bandwidth power amplifier |
| CN110708023B (en) * | 2019-09-30 | 2023-06-09 | 南京微通电子技术有限公司 | High-power ultra-bandwidth power amplifier |
| CN113702916A (en) * | 2021-06-24 | 2021-11-26 | 北京无线电测量研究所 | Compact 2-18GHz solid-state ultra-wideband transmitter |
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