CN109755298A - A kind of groove-shaped IGBT power device - Google Patents
A kind of groove-shaped IGBT power device Download PDFInfo
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- CN109755298A CN109755298A CN201711058787.7A CN201711058787A CN109755298A CN 109755298 A CN109755298 A CN 109755298A CN 201711058787 A CN201711058787 A CN 201711058787A CN 109755298 A CN109755298 A CN 109755298A
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Abstract
A kind of groove-shaped IGBT power device provided in an embodiment of the present invention, diode is contacted including emitter, collector, first grid, second grid, body diode and body area, body diode is connect with body area contact Diode series, first grid controls being switched on and off for the first current channel between emitter and collector by grid voltage, and second grid and emitter connect and control being switched on and off for the second current channel between emitter and collector by emitter voltage.When off, the reverse current for flowing through body diode can be greatly reduced in a kind of groove-shaped IGBT power device of the invention, so as to which few sub- carrier in body diode is greatly reduced, so that groove-shaped IGBT power device realizes quick Reverse recovery function.
Description
Technical field
The invention belongs to semiconductor power device technology fields, restore function with snap back more particularly to a kind of
Groove-shaped IGBT power device.
Background technique
IGBT (isolated-gate field effect transistor (IGFET)) power device is combined by MOS transistor and bipolar junction transistor
A kind of the advantages of device, input extremely MOS transistor, output extremely PNP transistor, it has merged both devices, both had
Have the advantages that MOS transistor driving power is small and switching speed is fast, and it is big with capacity that there is bipolar junction transistor saturation pressure to reduce
The advantages of, it is more and more widely used in modern power electronics technology, especially occupies the big or middle of upper frequency
The leading position of power tube application.
The schematic diagram of the section structure of the groove-shaped IGBT power device of the prior art is as shown in Figure 1, include spaced p
Type collector area 31 and N-shaped collector area 3, p-type collector area 31 and N-shaped collector area 3 pass through collector electrode metal contact layer 70
Connect collector voltage.N-shaped field cut-off region 32 on p-type collector area 31 and N-shaped collector area 3, in N-shaped field cut-off region 32
On N-shaped drift region 30, in N-shaped drift region 30 be equipped with p-type body area 33, formed between p-type body area 33 and N-shaped drift region 30
Parasitic body diode structure in groove-shaped IGBT power device.P-type body area contact zone 38 and N-shaped are equipped in p-type body area 33
Source region 34, N-shaped source region 34 and p-type body area contact zone 38 pass through the external emitter voltage of emitter metal contact layer 47.In general, p
The doping concentration of the area Xing Ti contact zone 38 is higher than the peak-peak of the doping concentration in p-type body area 33, thus p-type body area contact zone
Ohmic contact structure is formed between 38 and emitter metal contact layer 47.Between two neighboring p-type body area 33 and recess is in n
Gate trench in type drift region 30 is formed with gate dielectric layer 35 and grid 36 in gate trench, and grid 36 is by connecing grid
Voltage controls being switched on and off for current channel.Insulating medium layer 50 is layer insulation dielectric layer.
The turn-on and turn-off of the groove-shaped IGBT power device of the prior art are controlled by gate-emitter voltage, when grid-
Current channel is formed when emitter voltage reaches the threshold voltage vt h of MOS transistor, inside MOS transistor and is PNP transistor
Base current is provided, so that groove-shaped IGBT power device is connected.When gate-emitter voltage is less than the threshold value of MOS transistor
When voltage Vth, the current channel in MOS transistor can be turned off, and the base current in PNP transistor is cut off, thus IGBT
Power device is turned off.The groove-shaped IGBT power device of the prior art when off, when collector emitter voltage be less than 0V
When, parasitic body diode is in positively biased pressure condition in IGBT power device, and electric current flow to current collection through body diode from emitter
Pole, the electric current of body diode, which exists, at this time injects few sub- carrier phenomenon, and these few sub- carriers are in groove-shaped IGBT power
Reverse recovery is carried out when device is opened again, leads to biggish reverse recovery current, and reverse recovery time is long.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of groove-shaped IGBT power devices for restoring function with snap back
Part, with solve the problems, such as IGBT power device in the prior art because caused by few sub- carrier injection reverse recovery time it is longer
Technical problem.
A kind of groove-shaped IGBT power device provided in an embodiment of the present invention, comprising:
Spaced p-type collector area and N-shaped collector area, the p-type collector area and the N-shaped collector area are equal
Connect collector voltage；
N-shaped field cut-off region on the p-type collector area and the N-shaped collector area is located at the N-shaped field and cuts
The only N-shaped drift region on area, at least two p-type body areas in the N-shaped drift region, in the p-type body area
First N-shaped source region, the second N-shaped source region and p-type body area contact zone, in general, p-type body area contact zone is set to first N-shaped
Between source region and the second N-shaped source region；
Conductive layer on p-type body area contact zone, the conductive layer and p-type body area contact zone form body
Area contacts diode structure, wherein the conductive layer is the cathode that the body area contacts diode structure, the p-type body area contact
Area is the anode that the body area contacts diode structure；
Between the two neighboring p-type body area and the gate trench in the N-shaped drift region of being recessed, the grid
Gate dielectric layer, first grid and second grid are equipped in groove；
The first electric current ditch in the p-type body area and between the first N-shaped source region and the N-shaped drift region
Road, the first grid control being switched on and off for first current channel by grid voltage；
The second electric current ditch in the p-type body area and between the second N-shaped source region and the N-shaped drift region
Road, the second grid, the second N-shaped source region, are electrically connected between conductive layer and equal sending and receiving emitter voltages, institute the first N-shaped source region
It states second grid and controls being switched on and off for second current channel by emitter voltage.
Optionally, the cut-in voltage of first current channel is greater than the cut-in voltage of second current channel.
Optionally, the conductive layer is the emitter metal contact layer on the p-type body area, the p-type body area
The doping concentration of contact zone is lower than the peak-peak of the doping concentration in the p-type body area, p-type body area contact zone and the hair
Emitter-base bandgap grading metal contact layer forms Schottky barrier diode structure, wherein the emitter metal contact layer is the Schottky gesture
The cathode of diode is built, p-type body area contact zone is the anode of the Schottky barrier diode.
Optionally, the second grid, the first N-shaped source region, the second N-shaped source region pass through the emitter metal contact layer
External emitter voltage.
Optionally, the conductive layer is N-shaped polysilicon layer on the p-type body area, the N-shaped polysilicon layer with
The body area that p-type body area contact zone forms silicon substrate contacts diode structure, wherein the N-shaped polysilicon layer is that the body area connects
The cathode of diode is touched, p-type body area contact zone is the anode that the body area contacts diode.
Optionally, the N-shaped polysilicon layer is connect with the second grid, the first N-shaped source region, the second N-shaped source contact,
The N-shaped polysilicon layer passes through the external emitter voltage of emitter metal contact layer.
Optionally, the N-shaped polysilicon layer is connect with the first N-shaped source region, the second N-shaped source contact, and described second
Grid and the N-shaped polysilicon layer pass through the external emitter voltage of emitter metal contact layer.
Optionally, the conductive layer is the n-type doping area in the p-type body area, and the n-type doping area is located at described
Between first N-shaped source region, the second N-shaped source region, the body area that the n-type doping area forms silicon substrate with p-type body area contact zone is connect
Touch diode structure, wherein the n-type doping area is the cathode that the body area contacts diode, and p-type body area contact zone is should
The anode of body area contact diode.
Optionally, the second grid, the first N-shaped source region, the second N-shaped source region, n-type doping area pass through emitter metal
The external emitter voltage of contact layer.
Optionally, the first grid and the second grid are set to the inside two sides of the gate trench, and described first
Grid and the second grid are isolated in the gate trench by insulating medium layer.
Optionally, the gate trench includes first grid groove and second grid groove, in the first grid groove
Equipped with gate dielectric layer and first grid, gate dielectric layer and second grid, the first grid are equipped in the second grid groove
Groove and the second grid groove are by the N-shaped separated drift regions.
A kind of groove-shaped IGBT power device provided in an embodiment of the present invention when off, when emitter-collector voltage
When greater than 0V, body area contact diode is in negative bias pressure condition, and the reverse current for flowing through body diode can be greatly reduced in this, from
And few sub- carrier in body diode can be greatly decreased, and then the Reverse recovery of groove-shaped IGBT power device can be reduced
Charge and reverse recovery time, so that groove-shaped IGBT power device can be realized quick Reverse recovery function；Meanwhile working as hair
When emitter-collector voltage reaches the cut-in voltage for the second current channel that second grid is controlled, the second current channel is opened,
Reverse current can flow to collector through the second current channel by emitter at this time.
Detailed description of the invention
In order to more clearly illustrate the technical scheme of the exemplary embodiment of the present invention, below to required in description embodiment
The attached drawing to be used does a simple introduction.Obviously, the attached drawing introduced is present invention a part of the embodiment to be described
Attached drawing, rather than whole attached drawings without creative efforts, may be used also for those of ordinary skill in the art
To obtain other attached drawings according to these attached drawings.
Fig. 1 is a kind of the schematic diagram of the section structure of groove-shaped IGBT power device of the prior art；
Fig. 2 is a kind of cross-section structure signal of one embodiment of groove-shaped IGBT power device provided by the invention
Figure；
Fig. 3 is a kind of cross-section structure signal of second embodiment of groove-shaped IGBT power device provided by the invention
Figure；
Fig. 4 is a kind of cross-section structure signal of the third embodiment of groove-shaped IGBT power device provided by the invention
Figure；
Fig. 5 is a kind of cross-section structure signal of the 4th embodiment of groove-shaped IGBT power device provided by the invention
Figure；
Fig. 6 is a kind of cross-section structure signal of the 5th embodiment of groove-shaped IGBT power device provided by the invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below with reference to attached in the embodiment of the present invention
Figure, by concrete mode, is fully described by technical solution of the present invention.Obviously, described embodiment is of the invention one
Divide embodiment, instead of all the embodiments, based on the embodiment of the present invention, those of ordinary skill in the art are not making wound
The every other embodiment that the property made obtains under the premise of working, falls within the scope of protection of the present invention.
It should be appreciated that the terms such as " having " used in the present invention, "comprising" and " comprising " do not allot one
Or the presence or addition of a number of other elements or combinations thereof.Meanwhile to clearly demonstrate a specific embodiment of the invention, explanation
Listed schematic diagram in book attached drawing is exaggerated the thickness of layer and region of the present invention, and listed feature size does not represent reality
Border size；Figure of description is schematically, to should not limit the scope of the present invention.Listed embodiment should not be limited only in specification
The specific shape in region shown in Figure of description, but deviation caused by such as being prepared including obtained shape.
It will be understood by those of skill in the art that IGBT power device includes cellular region and termination environment, wherein use cellular region
In obtaining low on-resistance, termination environment is used to improve the pressure resistance of most marginal cellular in cellular region.Termination environment is IGBT power device
Universal architecture in part has different design structures according to the requirement of different product, in embodiments of the present invention no longer show and
The specific structure of the termination environment of groove-shaped IGBT power device is described.Groove-shaped IGBT power described in the embodiment of the present invention
Device refers to the structure of cellular region in groove-shaped IGBT power device.
Fig. 2 is a kind of cross-section structure signal of one embodiment of groove-shaped IGBT power device provided by the invention
Figure, as shown in Fig. 2, a kind of groove-shaped IGBT power device provided in an embodiment of the present invention includes p-type collector area 31 and N-shaped collection
Electrode district 3, p-type collector area 31 and N-shaped collector area 3 connect groove-shaped IGBT power device by collector electrode metal contact layer 70
The collector voltage of part.N-shaped field cut-off region 32 on p-type collector area 31 and N-shaped collector area 3 is located at N-shaped field and cuts
The only N-shaped drift region 30 on area 32.At least two p-type body areas 33 are formed in N-shaped drift region 30, in each p-type body area
P-type body area contact zone 38, the first N-shaped source region 34a and the second N-shaped source region 34b are respectively formed in 33, in general, p-type body area contacts
Area 38 is between the first N-shaped source region 34a and the second N-shaped source region 34b.
Merely exemplary in this embodiment shows three 33 structures of p-type body area, p-type body area 33 and N-shaped drift region 30
Between form body diode structure parasitic in groove-shaped IGBT power device, wherein p-type body area 33 be the body diode sun
Pole, N-shaped drift region 30 are the cathode of the body diode.
Conductive layer 37 on p-type body area contact zone 38, conductive layer 37 form body area with p-type body area contact zone 38 and connect
Diode structure is touched, wherein conductive layer 37 is the cathode that the body area contacts diode structure, and p-type body area contact zone 38 is the body area
The anode of diode structure is contacted, thus the anode of body area contact diode is connect with the anode of parasitic body diode.
Optionally, conductive layer 37 can be N-shaped polysilicon layer, or metal layer, thus body area contact diode can
Body area to be silicon substrate contacts diode, or Schottky barrier diode.
Between two neighboring p-type body area 33 and the gate trench in N-shaped drift region 30 of being recessed, the gate trench
Bottom can be higher than the bottom in p-type body area 33, can also be lower than the bottom in p-type body area 33 or exist with the bottom in p-type body area 33
Identical depth location, Fig. 2 are only illustrated by taking bottom of the bottom of gate trench lower than p-type body area 33 as an example.Grid
Gate dielectric layer 35, first grid 36a and second grid 36b are equipped in the groove of pole, first grid 36a and second grid 36b are located at
The inside two sides of gate trench, first grid 36a and second grid 36b are isolated in gate trench by insulating medium layer 80, absolutely
Edge dielectric layer 80 is usually silica.The grid voltage of the external groove-shaped IGBT power device of first grid 36a, second grid
36b, the first N-shaped source region 34a, the second N-shaped source region 34b, the hair for being electrically connected between conductive layer 37 and connecing IGBT power device
Emitter voltage.In this embodiment, conductive layer 37 and the first N-shaped source region 34a, the second N-shaped source region 34b are directly connected, because
This needs for conductive layer 37 and second grid 36b to be electrically connected.
The first current channel in p-type body area 33 and between the first N-shaped source region 34a and N-shaped drift region 30, the
One grid 36a controlled by the grid voltage of groove-shaped IGBT power device the first N-shaped source region 34a and N-shaped drift region 30 it
Between first current channel be switched on and off.
The second current channel in p-type body area 33 and between the second N-shaped source region 34b and N-shaped drift region 30, the
Two grid 36b control the second N-shaped source region 34b and N-shaped drift region 30 by the emitter voltage of groove-shaped IGBT power device
Between second current channel be switched on and off.Preferably, the first current channel cut-in voltage is greater than the second current channel
Cut-in voltage.
Current channel in IGBT power device be when applying voltage to grid the accumulation layer that is formed in p-type body area and
Inversion layer, in attached drawing of the embodiment of the present invention, the first electric current ditch of the first grid 36a control in groove-shaped IGBT power device
Road and the second current channel of second grid 36b control are not shown.
A kind of turn-on and turn-off of groove-shaped IGBT power device of the invention are by gate-emitter voltage (the i.e. first grid
Pole-emitter voltage) control, when gate-emitter voltage reaches cut-in voltage (the i.e. groove-shaped IGBT function of the first current channel
The threshold voltage of rate device) when, the first current channel in groove-shaped IGBT power device is opened and provides base for PNP transistor
Electrode current, so that groove-shaped IGBT power device is connected.When cut-in voltage of the gate-emitter voltage less than the first current channel
When, the first current channel in groove-shaped IGBT power device can be turned off, and the base current in PNP transistor is cut off, from
And groove-shaped IGBT power device is turned off.
A kind of groove-shaped IGBT power device of the invention when off, when emitter voltage be greater than collector voltage when,
Body area contact diode is in negative bias pressure condition, and the reverse current for flowing through body diode can be greatly lowered in this, so as to
Few sub- carrier in body diode is greatly reduced, and then the Reverse recovery electricity of groove-shaped IGBT power device can be greatly reduced
Lotus and reverse recovery time, so that groove-shaped IGBT power device can be realized quick Reverse recovery function；Meanwhile working as transmitting
When pole-collector voltage reaches the cut-in voltage for the second current channel that second grid is controlled, second grid controlled
Two current channels are in the open state, so that reverse current flow to collector through the second current channel by emitter.
Fig. 3 is a kind of cross-section structure signal of second embodiment of groove-shaped IGBT power device provided by the invention
Figure, Fig. 3 is a kind of a kind of groove-shaped IGBT power device provided by the invention groove-shaped IGBT function of the invention shown in Fig. 2
On the basis of rate device, body area contacts one embodiment that diode structure uses Schottky barrier diode structure.Such as Fig. 3 institute
Show, emitter metal contact layer 47 is formed on p-type body area 33, and emitter metal contact layer 47 is to be located at p-type body area
Conductive layer on contact zone 38, at this point, the doping that the doping concentration of p-type body area contact zone 38 needs to be lower than p-type body area 33 is dense
The peak-peak of degree, thus p-type body area contact zone 38 and emitter metal contact layer 47 form Schottky barrier diode structure,
Wherein, emitter metal contact layer 47 is the cathode of the Schottky barrier diode, and p-type body area contact zone 38 is the Schottky gesture
Build the anode of diode.Second grid 36b, the first N-shaped source region 34a, the second N-shaped source region 34b are contacted by emitter metal
47 external emitter voltage of layer, thus second grid 36b is controlled by emitter voltage close to the second side N-shaped source region 34b
Second current channel be switched on and off.First grid 36a by gate metal contact layer (positional relationship based on section,
Gate metal contact layer is not shown in Fig. 3) external grid voltage, thus first grid 36a is leaned on by grid voltage to control
First current channel of the side nearly first N-shaped source region 34a is switched on and off.Emitter metal contact layer 47 connects with gate metal
It is isolated between contact layer by interlayer insulating film 50, interlayer insulating film 50 is usually the materials such as silica glass, boron-phosphorosilicate glass or phosphorosilicate glass
Material.
A kind of groove-shaped IGBT power device of the invention as shown in Figure 3, when the contact berrier of Schottky barrier diode
When extremely low, Schottky barrier diode structure can be equivalent to ohmic contact structure, this can reduce to a certain extent and flow through body
The reverse current of diode so as to reduce few sub- carrier in body diode, and then can reduce groove-shaped IGBT function
The reverse recovery charge of rate device and reverse recovery time so that groove-shaped IGBT power device can be realized it is quickly reversed extensive
Multiple function, the Reverse recovery speed of groove-shaped IGBT power device at this time are slower than the Schottky barrier two using high contact berrier
Reverse recovery speed when pole pipe, but it is faster than the Reverse recovery of traditional IGBT power device of no body area contact diode structure
Speed.
Fig. 4 is a kind of cross-section structure signal of the third embodiment of groove-shaped IGBT power device provided by the invention
Figure, Fig. 4 is a kind of a kind of groove-shaped IGBT power device provided by the invention groove-shaped IGBT function of the invention shown in Fig. 2
On the basis of rate device, body area contacts diode structure using one embodiment of the body area contact diode of silicon substrate.Such as Fig. 4 institute
Show, be formed with N-shaped polysilicon layer 57 on p-type body area 33, N-shaped polysilicon layer 57 be located at p-type body area contact zone 38 it
On conductive layer, the body area that thus p-type body area contact zone 38 and N-shaped polysilicon layer 57 form silicon substrate contacts diode structure,
In, N-shaped polysilicon layer 57 is the cathode that the body area contacts diode, and p-type body area contact zone 38 is that the body area contacts diode
Anode.N-shaped polysilicon layer 57 and second grid 36b, the first N-shaped source region 34a, the second N-shaped source region 34b are directly connected, N-shaped
Polysilicon layer 57 passes through the external emitter voltage of emitter metal contact layer 47.Thus second grid 36b passes through emitter voltage
To control being switched on and off for the second current channel close to the second side source region 34b.First grid 36a is connect by gate metal
Contact layer (positional relationship based on section, gate metal contact layer are not shown in Fig. 4) external grid voltage, thus first grid
36a controls being switched on and off for the first current channel close to the first side source region 34a by grid voltage.Emitter metal
It is isolated between contact layer 47 and gate metal contact layer by interlayer insulating film 50, interlayer insulating film 50 is usually silica glass, boron phosphorus
The materials such as silica glass or phosphorosilicate glass.
Optionally, when the body area that p-type body area contact zone 38 and N-shaped polysilicon layer 57 form silicon substrate contacts diode structure
When, N-shaped polysilicon layer 57 can directly be connected with the first N-shaped source region 34a, the second N-shaped source region 34b, then second grid
36b and N-shaped polysilicon layer 57 pass through the external emitter voltage of emitter metal contact layer.
Fig. 5 is a kind of cross-section structure signal of the 4th embodiment of groove-shaped IGBT power device provided by the invention
Figure, Fig. 5 are that a kind of body area contact diode structure of groove-shaped IGBT power device provided by the invention uses the body area of silicon substrate
Contact another embodiment of diode.As shown in figure 5, a kind of groove-shaped IGBT power device of the invention includes p-type current collection
Polar region 31 and N-shaped collector area 3, p-type collector area 31 and N-shaped collector area 3 connect ditch by collector electrode metal contact layer 70
The collector voltage of groove profile IGBT power device.N-shaped field cut-off region on p-type collector area 31 and N-shaped collector area 3
32, the N-shaped drift region 30 on N-shaped field cut-off region 32.At least two p-type body areas are also formed in N-shaped drift region 30
33, p-type body area contact zone 38, n-type doping area 39, the first N-shaped source region 34a and the second N-shaped source region in p-type body area 33
34b, in general, p-type body area contact zone 38 and n-type doping area 39 be set to the first N-shaped source region 34a and the second N-shaped source region 34b it
Between, n-type doping area 39 is located on p-type body area contact zone 38, and being located at the n-type doping area 39 in p-type body area 33 as a result, is position
Conductive layer on p-type body area contact zone 38, n-type doping area 39 and p-type body area contact zone 38 form the body area of silicon substrate as a result,
Contact diode structure, wherein n-type doping area 39 is the cathode that the body area contacts diode structure, and p-type body area contact zone 38 is
The anode of body area contact diode structure.
Between two neighboring p-type body area 33 and the gate trench in N-shaped drift region 30 of being recessed, the gate trench
Bottom can be higher than the bottom in p-type body area 33, can also be lower than the bottom in p-type body area 33 or exist with the bottom in p-type body area 33
Identical depth location, Fig. 5 are only illustrated by taking bottom of the bottom of gate trench lower than p-type body area 33 as an example.Grid
Gate dielectric layer 35, first grid 36a and second grid 36b are equipped in the groove of pole, first grid 36a and second grid 36b are located at
The inside two sides of gate trench, first grid 36a and second grid 36b are isolated in gate trench by insulating medium layer 80, absolutely
Edge dielectric layer 80 is usually silica.
The first current channel in p-type body area 33 and between the first N-shaped source region 34a and N-shaped drift region 30, the
One grid 36a passes through gate metal contact layer (positional relationship based on section, gate metal contact layer are not shown in Figure 5) outside
The grid voltage of groove-shaped IGBT power device is connect, thus the grid electricity that first grid 36a passes through groove-shaped IGBT power device
Pressure is to control being switched on and off for the first current channel.
The second current channel in p-type body area 33 and between the second N-shaped source region 34b and N-shaped drift region 30, the
Two grid 36b, the first N-shaped source region 34a, the second N-shaped source region 34b and n-type doping area 39 pass through emitter metal contact layer 47
The emitter voltage of external groove-shaped IGBT power device, second grid 36b passes through the hair of groove-shaped IGBT power device as a result,
Emitter voltage controls being switched on and off for the second current channel.
It is isolated between emitter metal contact layer 47 and gate metal contact layer by interlayer insulating film 50, interlayer insulating film 50
The usually materials such as silica glass, boron-phosphorosilicate glass or phosphorosilicate glass.
A kind of groove-shaped IGBT power device provided by the invention, first grid 36a and second grid 36b can be formed in
In one gate trench (as shown in Fig. 2, Fig. 3, Fig. 4 and Fig. 5), it can also be formed in two different gate trench, Fig. 6 is
A kind of the schematic diagram of the section structure of 5th embodiment of groove-shaped IGBT power device provided by the invention, Fig. 6 are the present invention
On the basis of a kind of a kind of groove-shaped IGBT power device provided groove-shaped IGBT power device shown in Fig. 2, the first grid
Pole 36a and second grid 3b is formed in one embodiment in different gate trench.As shown in fig. 6, of the invention is groove-shaped
The gate trench of IGBT power device may include first grid groove and second grid groove, be equipped with grid in first grid groove
Dielectric layer 35 and first grid 36a, second grid groove is interior to be equipped with gate dielectric layer 35 and second grid 36b, first grid groove
It is isolated with second grid groove by N-shaped drift region 30.First grid 36a is controlled in p-type body area 33 and is leaned on by grid voltage
First current channel of the side nearly first N-shaped source region 34a is switched on and off, and second grid 36b is controlled by emitter voltage
Second current channel of interior and close second side N-shaped source region 34b in p-type body area 33 processed being switched on and off.
The above specific embodiment and embodiment are to a kind of groove-shaped IGBT power device technology think of proposed by the present invention
The specific support thought, this does not limit the scope of protection of the present invention, it is all according to the technical idea provided by the invention, in this skill
Any equivalent variations or equivalent change done on the basis of art scheme still fall within the range of technical solution of the present invention protection.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily
Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details and legend shown and described herein.
Claims (10)
1. a kind of groove-shaped IGBT power device characterized by comprising
Spaced p-type collector area and N-shaped collector area, the p-type collector area and the N-shaped collector area connect collection
Electrode voltage；
N-shaped field cut-off region on the p-type collector area and the N-shaped collector area is located at the N-shaped field cut-off region
On N-shaped drift region, at least two p-type body areas in the N-shaped drift region, the first n in the p-type body area
Type source region, the second N-shaped source region and p-type body area contact zone；
Conductive layer on p-type body area contact zone, the conductive layer form body area with p-type body area contact zone and connect
Diode structure is touched, wherein the conductive layer is the cathode that the body area contacts diode structure, p-type body area contact zone is
The anode of the body area contact diode structure；
Between the two neighboring p-type body area and the gate trench in the N-shaped drift region of being recessed, the gate trench
It is interior to be equipped with gate dielectric layer, first grid and second grid；
The first current channel in the p-type body area and between the first N-shaped source region and the N-shaped drift region,
The first grid controls being switched on and off for first current channel by grid voltage；
The second current channel in the p-type body area and between the second N-shaped source region and the N-shaped drift region,
The second grid, the second N-shaped source region, is electrically connected between conductive layer and equal sending and receiving emitter voltages the first N-shaped source region, described
Second grid controls being switched on and off for second current channel by emitter voltage.
2. a kind of groove-shaped IGBT power device as described in claim 1, which is characterized in that first current channel is opened
Open the cut-in voltage that voltage is greater than second current channel.
3. a kind of groove-shaped IGBT power device as described in claim 1, which is characterized in that the conductive layer is positioned at described
Emitter metal contact layer on p-type body area, doping concentration the mixing lower than the p-type body area of p-type body area contact zone
The peak-peak of miscellaneous concentration, p-type body area contact zone and the emitter metal contact layer form Schottky barrier diode
Structure.
4. a kind of groove-shaped IGBT power device as claimed in claim 3, which is characterized in that the second grid, the first N-shaped
Source region, the second N-shaped source region pass through the external emitter voltage of emitter metal contact layer.
5. a kind of groove-shaped IGBT power device as described in claim 1, which is characterized in that the conductive layer is positioned at described
N-shaped polysilicon layer on p-type body area, the N-shaped polysilicon layer are contacted with the body area that p-type body area contact zone forms silicon substrate
Diode structure.
6. a kind of groove-shaped IGBT power device as claimed in claim 5, which is characterized in that the N-shaped polysilicon layer and institute
Second grid, the first N-shaped source region, the connection of the second N-shaped source contact are stated, the N-shaped polysilicon layer is contacted by emitter metal
The external emitter voltage of layer.
7. a kind of groove-shaped IGBT power device as described in claim 1, which is characterized in that the conductive layer is positioned at described
The body area that n-type doping area in p-type body area, the n-type doping area and p-type body area contact zone form silicon substrate contacts diode
Structure.
8. a kind of groove-shaped IGBT power device as claimed in claim 7, which is characterized in that the second grid, the first N-shaped
Source region, the second N-shaped source region, n-type doping area pass through the external emitter voltage of emitter metal contact layer.
9. a kind of groove-shaped IGBT power device as described in claim 1, which is characterized in that the first grid and described the
Two grids are set to the inside two sides of the gate trench, the first grid and the second grid in the gate trench by
Insulating medium layer isolation.
10. a kind of groove-shaped IGBT power device as described in claim 1, which is characterized in that the gate trench includes the
One gate trench and second grid groove, the first grid groove is interior to be equipped with gate dielectric layer and first grid, the second gate
Gate dielectric layer and second grid are equipped in the groove of pole, the first grid groove and the second grid groove are floated by the N-shaped
Shifting separate from.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711058787.7A CN109755298B (en) | 2017-11-01 | 2017-11-01 | Groove type IGBT power device |
| PCT/CN2018/112338 WO2019085850A1 (en) | 2017-11-01 | 2018-10-29 | Igbt power device |
| US16/627,675 US11081574B2 (en) | 2017-11-01 | 2018-10-29 | IGBT power device |
| JP2020509053A JP6947915B6 (en) | 2017-11-01 | 2018-10-29 | IGBT power device |
| KR1020207004879A KR102292410B1 (en) | 2017-11-01 | 2018-10-29 | IGBT power device |
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|---|---|---|---|
| CN201711058787.7A CN109755298B (en) | 2017-11-01 | 2017-11-01 | Groove type IGBT power device |
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| CN109755298B CN109755298B (en) | 2020-10-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115172472A (en) * | 2022-08-12 | 2022-10-11 | 上海擎茂微电子科技有限公司 | Fast recovery diode |
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| CN109755298B (en) | 2020-10-16 |
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