CN109755298B - Groove type IGBT power device - Google Patents
Groove type IGBT power device Download PDFInfo
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- CN109755298B CN109755298B CN201711058787.7A CN201711058787A CN109755298B CN 109755298 B CN109755298 B CN 109755298B CN 201711058787 A CN201711058787 A CN 201711058787A CN 109755298 B CN109755298 B CN 109755298B
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Abstract
The embodiment of the invention provides a trench type IGBT power device which comprises an emitter, a collector, a first gate, a second gate, a body diode and a body contact diode, wherein the body diode is connected with the body contact diode in series, the first gate controls the opening and closing of a first current channel between the emitter and the collector through gate voltage, and the second gate is connected with the emitter and controls the opening and closing of a second current channel between the emitter and the collector through emitter voltage. When the trench type IGBT power device is turned off, the reverse current flowing through the body diode can be greatly reduced, so that minority carrier in the body diode can be greatly reduced, and the rapid reverse recovery function of the trench type IGBT power device can be realized.
Description
Technical Field
The invention belongs to the technical field of semiconductor power devices, and particularly relates to a trench type IGBT power device with a rapid reverse recovery function.
Background
The IGBT (insulated gate field effect transistor) power device is a device formed by compounding an MOS transistor and a bipolar transistor, the input electrode of the IGBT power device is the MOS transistor, and the output electrode of the IGBT power device is a PNP transistor.
A schematic cross-sectional structure of a trench IGBT power device in the prior art is shown in fig. 1, and includes a p-type collector region 31 and an n-type collector region 3 which are arranged at intervals, and the p-type collector region 31 and the n-type collector region 3 are connected to a collector voltage through a collector metal contact layer 70. An n-type field stop region 32 is arranged above the p-type collector region 31 and the n-type collector region 3, an n-type drift region 30 is arranged above the n-type field stop region 32, a p-type body region 33 is arranged in the n-type drift region 30, and a parasitic body diode structure in the trench-type IGBT power device is formed between the p-type body region 33 and the n-type drift region 30. Within the p-type body region 33 are a p-type body region contact region 38 and an n-type source region 34, the n-type source region 34 and the p-type body region contact region 38 being externally connected to the emitter voltage via an emitter metal contact layer 47. Typically, the doping concentration of the p-type body region contact region 38 is higher than the maximum peak of the doping concentration of the p-type body region 33, so that an ohmic contact structure is formed between the p-type body region contact region 38 and the emitter metal contact layer 47. And a gate trench which is positioned between two adjacent p-type body regions 33 and is recessed in the n-type drift region 30, wherein a gate dielectric layer 35 and a gate 36 are formed in the gate trench, and the gate 36 controls the on and off of a current channel by connecting a gate voltage. The insulating dielectric layer 50 is an interlayer insulating dielectric layer.
The on and off of the trench type IGBT power device in the prior art are controlled by the voltage of a grid electrode-emitter electrode, when the voltage of the grid electrode-emitter electrode reaches the threshold voltage Vth of the MOS transistor, a current channel is formed in the MOS transistor and provides base current for the PNP transistor, so that the trench type IGBT power device is turned on. When the gate-emitter voltage is less than the threshold voltage Vth of the MOS transistor, the current channel in the MOS transistor is turned off, the base current in the PNP transistor is cut off, and the IGBT power device is turned off. When a trench type IGBT power device in the prior art is turned off, when the voltage of a collector-emitter is smaller than 0V, a parasitic body diode in the IGBT power device is in a forward bias state, current flows from the emitter to the collector through the body diode, the current of the body diode has the phenomenon of injecting minority carrier, and the minority carrier carries out reverse recovery when the trench type IGBT power device is turned on again, so that larger reverse recovery current is caused, and the reverse recovery time is long.
Disclosure of Invention
In view of this, an object of the present invention is to provide a trench type IGBT power device with a fast reverse recovery function, so as to solve the technical problem of a longer reverse recovery time of the IGBT power device in the prior art due to the injection of minority carrier.
The embodiment of the invention provides a trench type IGBT power device, which comprises:
the p-type collector region and the n-type collector region are arranged at intervals and are both connected with a collector voltage;
an n-type field stop region above the p-type collector region and the n-type collector region, an n-type drift region above the n-type field stop region, at least two p-type body regions within the n-type drift region, a first n-type source region, a second n-type source region, and a p-type body region contact region within the p-type body regions, typically the p-type body region contact region is disposed between the first n-type source region and the second n-type source region;
a conductive layer over the p-type body region contact region, the conductive layer and the p-type body region contact region forming a body contact diode structure, wherein the conductive layer is a cathode of the body contact diode structure and the p-type body region contact region is an anode of the body contact diode structure;
the grid electrode groove is positioned between two adjacent p-type body regions and is sunken in the n-type drift region, and a grid electrode medium layer, a first grid electrode and a second grid electrode are arranged in the grid electrode groove;
a first current channel within the p-type body region and between the first n-type source region and the n-type drift region, the first gate controlling the turn-on and turn-off of the first current channel by a gate voltage;
and the second current channel is positioned in the p-type body region and is arranged between the second n-type source region and the n-type drift region, the second grid, the first n-type source region, the second n-type source region and the conducting layer are electrically connected and all receive emitter voltage, and the second grid controls the opening and closing of the second current channel through the emitter voltage.
Optionally, the turn-on voltage of the first current channel is greater than the turn-on voltage of the second current channel.
Optionally, the conductive layer is an emitter metal contact layer located above the p-type body region, a doping concentration of the p-type body region contact layer is lower than a maximum peak value of the doping concentration of the p-type body region, and the p-type body region contact layer and the emitter metal contact layer form a schottky barrier diode structure, where the emitter metal contact layer is a cathode of the schottky barrier diode and the p-type body region contact layer is an anode of the schottky barrier diode.
Optionally, the second gate, the first n-type source region, and the second n-type source region all receive an emitter voltage through the outside of the emitter metal contact layer.
Optionally, the conductive layer is an n-type polysilicon layer located above the p-type body region, and the n-type polysilicon layer and the p-type body region contact region form a silicon-based body region contact diode structure, where the n-type polysilicon layer is a cathode of the body region contact diode, and the p-type body region contact region is an anode of the body region contact diode.
Optionally, the n-type polycrystalline silicon layer is in contact connection with the second gate, the first n-type source region and the second n-type source region, and the n-type polycrystalline silicon layer is externally connected to an emitter voltage through the emitter metal contact layer.
Optionally, the n-type polycrystalline silicon layer is in contact connection with the first n-type source region and the second n-type source region, and the second gate and the n-type polycrystalline silicon layer are externally connected to an emitter voltage through an emitter metal contact layer.
Optionally, the conductive layer is an n-type doped region located in the p-type body region, the n-type doped region is located between the first n-type source region and the second n-type source region, and the n-type doped region and the p-type body region contact region form a silicon-based body contact diode structure, where the n-type doped region is a cathode of the body contact diode and the p-type body region contact region is an anode of the body contact diode.
Optionally, the second gate, the first n-type source region, the second n-type source region, and the n-type doped region all receive an emitter voltage through the outside of the emitter metal contact layer.
Optionally, the first gate and the second gate are disposed on two sides of the inside of the gate trench, and the first gate and the second gate are isolated by an insulating medium layer in the gate trench.
Optionally, the gate trench includes a first gate trench and a second gate trench, a gate dielectric layer and a first gate are disposed in the first gate trench, a gate dielectric layer and a second gate are disposed in the second gate trench, and the first gate trench and the second gate trench are isolated by the n-type drift region.
When the trench type IGBT power device provided by the embodiment of the invention is turned off, when the voltage of an emitter-collector is more than 0V, the body contact diode is in a negative bias state, so that the reverse current flowing through the body diode can be greatly reduced, minority carriers in the body diode can be greatly reduced, the reverse recovery charge and the reverse recovery time of the trench type IGBT power device can be further reduced, and the rapid reverse recovery function of the trench type IGBT power device can be realized; meanwhile, when the emitter-collector voltage reaches the opening voltage of the second current channel controlled by the second gate, the second current channel is opened, and then the reverse current flows from the emitter to the collector through the second current channel.
Drawings
In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, a brief description is given below of the drawings used in describing the embodiments. It should be clear that the described figures are only views of some of the embodiments of the invention to be described, not all, and that for a person skilled in the art, other figures can be derived from these figures without inventive effort.
FIG. 1 is a schematic cross-sectional structure diagram of a trench type IGBT power device in the prior art;
FIG. 2 is a schematic cross-sectional structure diagram of a first embodiment of a trench type IGBT power device provided by the invention;
fig. 3 is a schematic cross-sectional structure diagram of a second embodiment of a trench type IGBT power device according to the present invention;
FIG. 4 is a schematic cross-sectional structure diagram of a third embodiment of a trench type IGBT power device provided by the invention;
FIG. 5 is a schematic cross-sectional view of a trench type IGBT power device according to a fourth embodiment of the present invention;
fig. 6 is a schematic cross-sectional structure diagram of a fifth embodiment of a trench type IGBT power device according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be described in detail below with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are a part of the embodiments of the present invention, not all embodiments, and all other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without inventive efforts fall within the scope of the present invention.
It is to be understood that the terms "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof. Meanwhile, in order to clearly illustrate the embodiments of the present invention, the schematic diagrams listed in the drawings of the specification enlarge the thicknesses of the layers and regions of the present invention, and the sizes of the listed figures do not represent actual sizes; the drawings described herein are for illustration purposes only and are not intended to limit the scope of the present disclosure. The examples listed in the specification should not be limited to the specific shapes of the regions shown in the drawings of the specification, but include the resulting shapes such as deviations due to production and the like.
As will be understood by those skilled in the art, an IGBT power device includes a cell region for obtaining a low on-resistance and a terminal region for increasing a withstand voltage of the outermost cells in the cell region. The terminal region is a general structure in the IGBT power device, different design structures are provided according to different product requirements, and the specific structure of the terminal region of the trench type IGBT power device is not shown and described in the embodiment of the invention. The trench type IGBT power device described in the embodiment of the invention refers to a structure of a cell area in the trench type IGBT power device.
Fig. 2 is a schematic cross-sectional structure diagram of a first embodiment of a trench IGBT power device provided by the present invention, and as shown in fig. 2, the trench IGBT power device provided by the embodiment of the present invention includes a p-type collector region 31 and an n-type collector region 3, and both the p-type collector region 31 and the n-type collector region 3 are connected to a collector voltage of the trench IGBT power device through a collector metal contact layer 70. An n-type field stop region 32 located above the p-type collector region 31 and the n-type collector region 3, and an n-type drift region 30 located above the n-type field stop region 32. At least two p-type body regions 33 are formed within the n-type drift region 30, a p-type body region contact region 38, a first n-type source region 34a and a second n-type source region 34b are formed within each p-type body region 33, respectively, the p-type body region contact region 38 generally being located between the first n-type source region 34a and the second n-type source region 34 b.
In this embodiment, only three p-type body regions 33 are exemplarily shown, and a parasitic body diode structure in the trench-type IGBT power device is formed between the p-type body regions 33 and the n-type drift region 30, where the p-type body regions 33 are anodes of the body diodes and the n-type drift region 30 is a cathode of the body diodes.
A conductive layer 37 overlying p-type body region contact region 38, conductive layer 37 and p-type body region contact region 38 forming a body contact diode structure, wherein conductive layer 37 is the cathode of the body contact diode structure and p-type body region contact region 38 is the anode of the body contact diode structure, whereby the anode of the body contact diode is connected to the anode of the parasitic body diode.
Alternatively, the conductive layer 37 may be an n-type polysilicon layer or a metal layer, and thus the body contact diode may be a silicon-based body contact diode or a schottky barrier diode.
And a gate trench which is located between two adjacent p-type body regions 33 and is recessed in the n-type drift region 30, wherein the bottom of the gate trench may be higher than the bottom of the p-type body region 33, may also be lower than the bottom of the p-type body region 33, or is at the same depth position as the bottom of the p-type body region 33, and fig. 2 only exemplifies that the bottom of the gate trench is lower than the bottom of the p-type body region 33. A gate dielectric layer 35, a first gate 36a and a second gate 36b are arranged in the gate trench, the first gate 36a and the second gate 36b are located at two sides of the inside of the gate trench, the first gate 36a and the second gate 36b are isolated by an insulating dielectric layer 80 in the gate trench, and the insulating dielectric layer 80 is usually silicon oxide. The first gate 36a is externally connected with the gate voltage of the trench type IGBT power device, and the second gate 36b, the first n-type source region 34a, the second n-type source region 34b and the conductive layer 37 are electrically connected and all connected with the emitter voltage of the IGBT power device. In this embodiment, the conductive layer 37 is directly connected to the first n-type source region 34a and the second n-type source region 34b, so that the conductive layer 37 only needs to be electrically connected to the second gate electrode 36 b.
A first current channel located in the p-type body region 33 and between the first n-type source region 34a and the n-type drift region 30, and the first gate 36a controls the opening and closing of the first current channel between the first n-type source region 34a and the n-type drift region 30 by the gate voltage of the trench IGBT power device.
And a second current channel located in the p-type body region 33 and between the second n-type source region 34b and the n-type drift region 30, wherein the second gate 36b controls the opening and closing of the second current channel between the second n-type source region 34b and the n-type drift region 30 through the emitter voltage of the trench IGBT power device. Preferably, the first current channel turn-on voltage is greater than the turn-on voltage of the second current channel.
The current channel in the IGBT power device is an accumulation layer and an inversion layer formed in a p-type body region when a voltage is applied to the gate, and in the drawings of the embodiment of the present invention, the first current channel controlled by the first gate 36a and the second current channel controlled by the second gate 36b in the trench type IGBT power device are not shown.
The on and off of the trench type IGBT power device are controlled by a grid-emitter voltage (namely a first grid-emitter voltage), and when the grid-emitter voltage reaches the opening voltage of a first current channel (namely the threshold voltage of the trench type IGBT power device), the first current channel in the trench type IGBT power device is opened and provides base current for a PNP transistor, so that the trench type IGBT power device is turned on. When the grid-emitter voltage is smaller than the turn-on voltage of the first current channel, the first current channel in the groove type IGBT power device can be turned off, the base current in the PNP transistor is cut off, and therefore the groove type IGBT power device is turned off.
When the trench type IGBT power device is turned off, when the voltage of an emitter is greater than that of a collector, the body contact diode is in a negative bias state, so that the reverse current flowing through the body diode can be greatly reduced, minority carriers in the body diode can be greatly reduced, the reverse recovery charge and the reverse recovery time of the trench type IGBT power device can be greatly reduced, and the rapid reverse recovery function of the trench type IGBT power device can be realized; meanwhile, when the emitter-collector voltage reaches the opening voltage of the second current channel controlled by the second grid, the second current channel controlled by the second grid is in an opening state, so that reverse current flows from the emitter to the collector through the second current channel.
Fig. 3 is a schematic cross-sectional structure diagram of a second embodiment of a trench type IGBT power device according to the present invention, and fig. 3 is an embodiment of a schottky barrier diode structure in a body contact diode structure of the trench type IGBT power device according to the present invention based on the trench type IGBT power device according to the present invention shown in fig. 2. As shown in fig. 3, an emitter metal contact layer 47 is formed on the p-type body region 33, the emitter metal contact layer 47 is a conductive layer on the p-type body region contact region 38, at this time, the doping concentration of the p-type body region contact region 38 needs to be lower than the maximum peak value of the doping concentration of the p-type body region 33, so that the p-type body region contact region 38 and the emitter metal contact layer 47 form a schottky barrier diode structure, wherein the emitter metal contact layer 47 is the cathode of the schottky barrier diode, and the p-type body region contact region 38 is the anode of the schottky barrier diode. The second gate 36b, the first n-type source region 34a, and the second n-type source region 34b are externally connected with an emitter voltage through the emitter metal contact layer 47, so that the second gate 36b controls the opening and closing of the second current channel on the side close to the second n-type source region 34b through the emitter voltage. The first gate electrode 36a is externally connected to a gate voltage through a gate metal contact layer (based on the positional relationship of the cross section, the gate metal contact layer is not shown in fig. 3), so that the first gate electrode 36a controls the opening and closing of the first current channel at the side close to the first n-type source region 34a through the gate voltage. The emitter metal contact 47 and the gate metal contact are separated by an interlayer insulating layer 50, and the interlayer insulating layer 50 is usually made of silicon glass, borophosphosilicate glass, phosphosilicate glass, or the like.
As shown in fig. 3, when the contact barrier of the schottky barrier diode is very low, the schottky barrier diode structure may be equivalent to an ohmic contact structure, which can reduce the reverse current flowing through the body diode to a certain extent, thereby reducing minority carrier in the body diode, further reducing the reverse recovery charge and the reverse recovery time of the trench IGBT power device, and enabling the trench IGBT power device to realize a fast reverse recovery function.
Fig. 4 is a schematic cross-sectional structure diagram of a third embodiment of a trench IGBT power device according to the present invention, and fig. 4 is an embodiment of a trench IGBT power device according to the present invention, in which a body contact diode structure of a body contact diode using silicon based is based on the trench IGBT power device according to the present invention shown in fig. 2. As shown in fig. 4, an n-type polysilicon layer 57 is formed over p-type body region 33, where n-type polysilicon layer 57 is a conductive layer over p-type body region contact region 38, and p-type body region contact region 38 and n-type polysilicon layer 57 form a silicon-based body contact diode structure, where n-type polysilicon layer 57 is the cathode of the body contact diode and p-type body region contact region 38 is the anode of the body contact diode. The n-type polysilicon layer 57 is directly connected to the second gate electrode 36b, the first n-type source region 34a, and the second n-type source region 34b in a contact manner, and the n-type polysilicon layer 57 is externally connected to an emitter voltage through the emitter metal contact layer 47. The second gate 36b thereby controls the turn-on and turn-off of the second current channel on the side close to the second source region 34b by the emitter voltage. The first gate electrode 36a is externally connected to a gate voltage through a gate metal contact layer (based on the positional relationship of the cross section, the gate metal contact layer is not shown in fig. 4), so that the first gate electrode 36a controls the turn-on and turn-off of the first current channel near the first source region 34a by the gate voltage. The emitter metal contact 47 and the gate metal contact are separated by an interlayer insulating layer 50, and the interlayer insulating layer 50 is usually made of silicon glass, borophosphosilicate glass, phosphosilicate glass, or the like.
Alternatively, when the p-type body region contact region 38 and the n-type polysilicon layer 57 form a silicon-based body contact diode structure, the n-type polysilicon layer 57 may be directly connected to the first n-type source region 34a and the second n-type source region 34b in a contact manner, and then the second gate electrode 36b and the n-type polysilicon layer 57 are connected to the emitter voltage through the emitter metal contact layer.
Fig. 5 is a schematic cross-sectional structure diagram of a fourth embodiment of the trench type IGBT power device according to the present invention, and fig. 5 is another embodiment of the trench type IGBT power device according to the present invention, in which a body contact diode structure of a silicon-based body contact diode is adopted. As shown in fig. 5, a trench IGBT power device of the present invention includes a p-type collector region 31 and an n-type collector region 3, and the p-type collector region 31 and the n-type collector region 3 are both connected to a collector voltage of the trench IGBT power device through a collector metal contact layer 70. An n-type field stop region 32 located above the p-type collector region 31 and the n-type collector region 3, and an n-type drift region 30 located above the n-type field stop region 32. At least two p-type body regions 33 are also formed in the n-type drift region 30, a p-type body region contact region 38, an n-type doped region 39, a first n-type source region 34a and a second n-type source region 34b within the p-type body region 33, typically, the p-type body region contact region 38 and the n-type doped region 39 are both disposed between the first n-type source region 34a and the second n-type source region 34b, the n-type doped region 39 is located above the p-type body region contact region 38, whereby the n-type doped region 39 within the p-type body region 33 is a conductive layer above the p-type body region contact region 38, whereby the n-type doped region 39 and the p-type body region contact region 38 form a silicon-based body contact diode structure, wherein the n-type doped region 39 is a cathode of the body contact diode structure and the p-type body region contact region 38 is an anode of the body contact diode structure.
And a gate trench which is located between two adjacent p-type body regions 33 and is recessed in the n-type drift region 30, wherein the bottom of the gate trench may be higher than the bottom of the p-type body region 33, may also be lower than the bottom of the p-type body region 33, or is at the same depth position as the bottom of the p-type body region 33, and fig. 5 only exemplifies that the bottom of the gate trench is lower than the bottom of the p-type body region 33. A gate dielectric layer 35, a first gate 36a and a second gate 36b are arranged in the gate trench, the first gate 36a and the second gate 36b are located at two sides of the inside of the gate trench, the first gate 36a and the second gate 36b are isolated by an insulating dielectric layer 80 in the gate trench, and the insulating dielectric layer 80 is usually silicon oxide.
A first current channel located in the p-type body region 33 and between the first n-type source region 34a and the n-type drift region 30, and the first gate 36a is externally connected to the gate voltage of the trench IGBT power device through a gate metal contact layer (based on the positional relationship of the cross section, the gate metal contact layer is not shown in fig. 5), so that the first gate 36a controls the on and off of the first current channel through the gate voltage of the trench IGBT power device.
And a second current channel located in the p-type body region 33 and between the second n-type source region 34b and the n-type drift region 30, wherein the second gate 36b, the first n-type source region 34a, the second n-type source region 34b and the n-type doped region 39 are externally connected with an emitter voltage of the trench IGBT power device through an emitter metal contact layer 47, and therefore the second gate 36b controls the opening and closing of the second current channel through the emitter voltage of the trench IGBT power device.
The emitter metal contact 47 and the gate metal contact are separated by an interlayer insulating layer 50, and the interlayer insulating layer 50 is usually made of silicon glass, borophosphosilicate glass, phosphosilicate glass, or the like.
In the trench type IGBT power device provided by the present invention, the first gate 36a and the second gate 36b may be formed in one gate trench (as shown in fig. 2, fig. 3, fig. 4, and fig. 5), or may be formed in two different gate trenches, fig. 6 is a schematic cross-sectional structure diagram of a fifth embodiment of the trench type IGBT power device provided by the present invention, fig. 6 is an embodiment of the trench type IGBT power device provided by the present invention, based on the trench type IGBT power device shown in fig. 2, the first gate 36a and the second gate 3b are formed in different gate trenches. As shown in fig. 6, the gate trench of the trench IGBT power device according to the present invention may include a first gate trench and a second gate trench, the first gate trench is provided with a gate dielectric layer 35 and a first gate 36a, the second gate trench is provided with a gate dielectric layer 35 and a second gate 36b, and the first gate trench and the second gate trench are separated by the n-type drift region 30. A first gate 36a controls the turn-on and turn-off of a first current channel in p-type body region 33 on the side near first n-type source region 34a by a gate voltage, and a second gate 36b controls the turn-on and turn-off of a second current channel in p-type body region 33 on the side near second n-type source region 34b by an emitter voltage.
The above embodiments and examples are specific supports for the technical idea of the trench IGBT power device proposed by the present invention, and the protection scope of the present invention cannot be limited thereby, and any equivalent changes or equivalent changes made on the basis of the technical scheme according to the technical idea proposed by the present invention still belong to the protection scope of the technical scheme of the present invention.
While embodiments of the invention have been described above, it is not limited to the applications set forth in the description and the embodiments, which are fully applicable in various fields of endeavor to which the invention pertains, and further modifications may readily be made by those skilled in the art, it being understood that the invention is not limited to the details shown and described herein without departing from the general concept defined by the appended claims and their equivalents.
Claims (10)
1. A trench type IGBT power device is characterized by comprising:
the p-type collector region and the n-type collector region are arranged at intervals and are both connected with a collector voltage;
an n-type field stop region located above the p-type collector region and the n-type collector region, an n-type drift region located above the n-type field stop region, at least two p-type body regions located within the n-type drift region, a first n-type source region, a second n-type source region, and a p-type body region contact region located within the p-type body regions;
a conductive layer over the p-type body region contact region, the conductive layer and the p-type body region contact region forming a body contact diode structure, wherein the conductive layer is a cathode of the body contact diode structure and the p-type body region contact region is an anode of the body contact diode structure;
the grid electrode groove is positioned between two adjacent p-type body regions and is sunken in the n-type drift region, and a grid electrode medium layer, a first grid electrode and a second grid electrode are arranged in the grid electrode groove;
a first current channel within the p-type body region and between the first n-type source region and the n-type drift region, the first gate controlling the turn-on and turn-off of the first current channel by a gate voltage;
and the second current channel is positioned in the p-type body region and is arranged between the second n-type source region and the n-type drift region, the second grid, the first n-type source region, the second n-type source region and the conducting layer are electrically connected and all receive emitter voltage, and the second grid controls the opening and closing of the second current channel through the emitter voltage.
2. The trench type IGBT power device of claim 1, wherein the turn-on voltage of the first current channel is greater than the turn-on voltage of the second current channel.
3. The trench IGBT power device of claim 1, wherein the conductive layer is an emitter metal contact layer over the p-type body region, the p-type body region contact region having a doping concentration lower than a maximum peak value of the doping concentration of the p-type body region, the p-type body region contact region and the emitter metal contact layer forming a schottky barrier diode structure.
4. The trench type IGBT power device as claimed in claim 3, wherein the second gate, the first n-type source region and the second n-type source region all receive an emitter voltage through the outside of the emitter metal contact layer.
5. The trench type IGBT power device as claimed in claim 1, wherein said conductive layer is an n-type polysilicon layer over said p-type body region, said n-type polysilicon layer and said p-type body region contact region forming a silicon-based body contact diode structure.
6. The trench type IGBT power device as claimed in claim 5, wherein the n-type polysilicon layer is in contact connection with the second gate, the first n-type source region and the second n-type source region, and the n-type polysilicon layer is externally connected to the emitter voltage through the emitter metal contact layer.
7. The trench type IGBT power device as claimed in claim 1, wherein said conductive layer is an n-type doped region located within said p-type body region, said n-type doped region and said p-type body region contact region forming a body contact diode structure.
8. The trench type IGBT power device as claimed in claim 7, wherein the second gate, the first n-type source region, the second n-type source region and the n-type doped region all receive emitter voltage through the outside of the emitter metal contact layer.
9. The trench type IGBT power device of claim 1, wherein the first gate and the second gate are arranged on two inner sides of the gate trench, and the first gate and the second gate are isolated in the gate trench by an insulating medium layer.
10. The trench type IGBT power device of claim 1, wherein the gate trenches comprise a first gate trench and a second gate trench, a gate dielectric layer and a first gate are arranged in the first gate trench, a gate dielectric layer and a second gate are arranged in the second gate trench, and the first gate trench and the second gate trench are separated by the n-type drift region.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711058787.7A CN109755298B (en) | 2017-11-01 | 2017-11-01 | Groove type IGBT power device |
| US16/627,675 US11081574B2 (en) | 2017-11-01 | 2018-10-29 | IGBT power device |
| PCT/CN2018/112338 WO2019085850A1 (en) | 2017-11-01 | 2018-10-29 | Igbt power device |
| JP2020509053A JP6947915B6 (en) | 2017-11-01 | 2018-10-29 | IGBT power device |
| KR1020207004879A KR102292410B1 (en) | 2017-11-01 | 2018-10-29 | IGBT power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN104051510A (en) * | 2013-03-12 | 2014-09-17 | 英飞凌科技股份有限公司 | Semiconductor device |
| CN105870179A (en) * | 2016-04-26 | 2016-08-17 | 电子科技大学 | Trench gate charge storage reverse-conducting insulated-gate bipolar transistor (RC-IGBT) and fabrication method thereof |
| CN106847908A (en) * | 2015-10-22 | 2017-06-13 | 英飞凌科技股份有限公司 | Power semiconductor transistor with complete depletion of channel region |
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| JP6284314B2 (en) * | 2012-08-21 | 2018-02-28 | ローム株式会社 | Semiconductor device |
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| CN104051510A (en) * | 2013-03-12 | 2014-09-17 | 英飞凌科技股份有限公司 | Semiconductor device |
| CN106847908A (en) * | 2015-10-22 | 2017-06-13 | 英飞凌科技股份有限公司 | Power semiconductor transistor with complete depletion of channel region |
| CN105870179A (en) * | 2016-04-26 | 2016-08-17 | 电子科技大学 | Trench gate charge storage reverse-conducting insulated-gate bipolar transistor (RC-IGBT) and fabrication method thereof |
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