CN109752918A - Photo etched mask optimum design method and system - Google Patents
Photo etched mask optimum design method and system Download PDFInfo
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- CN109752918A CN109752918A CN201711085050.4A CN201711085050A CN109752918A CN 109752918 A CN109752918 A CN 109752918A CN 201711085050 A CN201711085050 A CN 201711085050A CN 109752918 A CN109752918 A CN 109752918A
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Abstract
The present invention provides a kind of photo etched mask optimum design method and system, and photo etched mask optimum design method includes the following steps: 1) successively to carry out light source optimization, exposure mask optimization and light source-exposure mask optimization according to Parameter Conditions needed for photoetching；2) exposure parameter is set according to optimum results；3) exposure parameter is modified according to the critical size of device；4) photo etched mask model is exported according to revised exposure parameter；5) optical near-correction is carried out to photo etched mask model；And 6) electrically verifying detection is carried out to the photo etched mask model after optical near-correction, required photo etched mask is obtained after electrically verifying detection passes through.Photo etched mask optimum design method of the invention optimizes by using light source, exposure mask optimizes and light source-exposure mask optimal setting exposure parameter, the automated setting of photo etched mask may be implemented, entire design process is fairly simple, flexible, and accuracy is higher.
Description
Technical field
The invention belongs to field of semiconductor manufacture, more particularly to a kind of photo etched mask optimum design method and system.
Background technique
In existing semiconductor technology, the design of photo etched mask is concerning subsequent entire semiconductor technology processing procedure, to production
The manufacture of product and the yield of product have vital influence.The method of existing photo etched mask design generally comprises following step
It is rapid:
1) photo etched mask resolution chart is designed；
2) photo etched mask resolution chart is offline (tape out)；
3) critical size is collected after exposing；
4) critical size of collection is filtered and is removed, to obtain required critical size；
5) photo etched mask model is corrected according to obtained critical size；
6) the photo etched mask model after correction is exported；
7) optical near-correction is carried out to the photo etched mask model；And
8) electrically verifying detection is carried out to the photo etched mask model after optical near-correction；
9) the photo etched mask model is subjected to hot spot reparation.
By above-mentioned steps it is found that in photo etched mask design process, needs first to be designed photo etched mask, is offline, and
Collection, filtering and the removing of progress critical size and etc., entire design process is more complicated cumbersome, takes a long time, increases
Cost is added.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of photo etched mask optimization design sides
Method and system, for solving present in the photo etched mask design process of the prior art, design process complexity is cumbersome, takes a long time
And the problem of higher cost.
To achieve the above object and other related purposes, the present invention provides a kind of photo etched mask optimum design method, described
Photo etched mask optimum design method includes the following steps:
1) light source optimization, exposure mask optimization and light source-exposure mask optimization are successively carried out according to Parameter Conditions needed for photoetching；
2) exposure parameter is set according to optimum results；
3) exposure parameter is modified according to the critical size of device；
4) photo etched mask model is exported according to revised exposure parameter；
5) optical near-correction is carried out to the photo etched mask model；And
6) electrically verifying detection is carried out to the photo etched mask model after optical near-correction, it is logical in electrically verifying detection
Later required photo etched mask is obtained.
As a preferred solution of the present invention, Parameter Conditions needed for photoetching include: photoetching equipment model, light in step 1)
Carve board hardware parameter, source numerical aperture, light source polarization direction and photoresist film layer structure.
As a preferred solution of the present invention, in step 1), the light source carried out according to Parameter Conditions needed for photoetching optimizes
Include the following steps:
Primary light source is provided；
The primary light source is subjected to the first suboptimization, it is latticed that the primary light source is divided into first；
The light source after first suboptimization is up-sampled into (up-sampled), described in after the first suboptimization
Light source is refined as second latticed, and the quantity of the second latticed middle grid is the quantity of the described first latticed middle grid
Integral multiple more than or equal to 2；
The light source after up-sampling is subjected to the second suboptimization, second suboptimization is not related to light source blurring
(source blur) processing；
The light source after second suboptimization is subjected to light source Fuzzy processing；And
Light source blurring treated light source is subjected to pupil rendering.
As a preferred solution of the present invention, described first it is latticed include 16 × 16 matrix grid, described second
Latticed includes 32 × 32 matrix grid.
As a preferred solution of the present invention, in step 1), the exposure mask carried out according to Parameter Conditions needed for photoetching optimizes
Include the following steps:
Original mask is provided；
The original mask is carried out to continuously transmit exposure mask (CTM) optimization；
Sub-resolution assist features (SRAF) is implanted by continuously transmitting in the exposure mask after exposure mask optimizes；
The exposure mask for being implanted with the Sub-resolution assist features is carried out to the optimization detected without mask rule, with
Several irregular flagpole patterns being intervally arranged are formed in the exposure mask；And
The optimization that the exposure mask for being formed with irregular flagpole pattern is proceeded through to mask rule detection, by described in not
Regular flagpole pattern is modified to rectangular strip figure.
As a preferred solution of the present invention, the critical size of the device is first passed through in advance in actual production technical process
Middle measurement collection and obtain.
As a preferred solution of the present invention, when detecting electric connection structure in the photo etched mask model in step 6)
When in the presence of open circuit or short circuit, further include the steps that carrying out hot spot reparation to the photo etched mask model after step 6).
The present invention also provides a kind of photo etched mask Optimum Design System, the photo etched mask Optimum Design System includes:
Light source optimization module, for carrying out light source optimization according to Parameter Conditions needed for photoetching；
Exposure mask optimization module, for carrying out exposure mask optimization according to Parameter Conditions needed for photoetching；
Light source-exposure mask optimization module is connected with the light source optimization module and the exposure mask optimization module, is used for foundation
Parameter Conditions needed for photoetching to the light source optimization module and the exposure mask optimization module optimization after the exposure mask carry out into
The optimization of one step light source and exposure mask optimization；
Exposure parameter setting module is connected with the light source-exposure mask optimization module, for exposing according to optimization configuration settings
Optical parameter；
Data memory module, the critical size for memory device；
Correction module is connected with the exposure parameter setting module and the data memory module, for according to device
Critical size the exposure parameter is modified；
Model output module is connected with the correction module, for covering according to the output photoetching of revised exposure parameter
Membrane modle；
Optical near-correction module is connected with the model output module, the photo etched mask model for that will export into
Row optical near-correction；And
Detection module is verified, is connected with the optical near-correction module, for will be described in after optical near-correction
Photo etched mask model carries out electrically verifying detection.
As a preferred solution of the present invention, the data memory module is also connected with semiconductor production equipment, uses
In the critical size for receiving and storing semiconductor production equipment device of measurement collection in actual production technical process.
As a preferred solution of the present invention, the photo etched mask Optimum Design System further includes hot spot repair module,
It is connected with the verifying detection module and the optical near-correction module, for detecting institute in the verifying detection module
It states when electric connection structure in photo etched mask model has open circuit or short circuit and hot spot reparation is carried out to the photo etched mask model.
As described above, photo etched mask optimum design method provided by the invention and system, have the advantages that this hair
Bright photo etched mask optimum design method optimizes by using light source, exposure mask optimizes and light source-exposure mask optimal setting exposure parameter,
The automated setting of photo etched mask may be implemented, entire design process is fairly simple, flexible, and accuracy is higher；Light of the invention
It carves by the measurement collection in actual production technical process in advance in exposure mask optimum design method, in photo etched mask design process
Critical size only to be need to be introduced directly into modified exposure parameter, can be saved crucial in existing photo etched mask design method
Size collection, filtering and removing and etc., to simplify design procedure, save design time and cost.
Detailed description of the invention
Fig. 1 is shown as the flow chart of the photo etched mask optimum design method provided in the embodiment of the present invention one.
Fig. 2 is shown as in the photo etched mask designed in the photo etched mask optimum design method provided in the embodiment of the present invention one
Rectangular graph structural schematic diagram.
Fig. 3 is shown as the exposure light designed in the photo etched mask optimum design method provided in the embodiment of the present invention one
The relational graph of intensity and the rectangular graph centre distance.
Fig. 4 is shown as being subdivided into exposure light source in the photo etched mask optimum design method provided in the embodiment of the present invention one
The structural schematic diagram that several points are modified with the different parts to rectangular graph.
Fig. 5 to Fig. 6 is shown as the structural block diagram of the light source exposure mask Optimum Design System provided in the embodiment of the present invention two.
Reference numerals explanation
11 rectangular graphs
12 exposure light sources
2 light source exposure mask Optimum Design Systems
20 light source optimization modules
21 exposure mask optimization modules
22 light sources-exposure mask optimization module
23 exposure parameter setting modules
24 data memory modules
25 correction modules
26 model output modules
27 optical near-correction modules
28 verifying detection modules
29 hot spot repair modules
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands further advantage and effect of the invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 is please referred to Fig. 6.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only show in diagram with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 1, the present invention provides a kind of photo etched mask optimum design method, the photo etched mask optimum design method
Include the following steps:
1) light source optimization, exposure mask optimization and light source-exposure mask optimization are successively carried out according to Parameter Conditions needed for photoetching；
2) exposure parameter is set according to optimum results；
3) exposure parameter is modified according to the critical size of device；
4) photo etched mask model is exported according to revised exposure parameter,
5) optical near-correction is carried out to the photo etched mask model；And
6) electrically verifying detection is carried out to the photo etched mask model after optical near-correction, it is logical in electrically verifying detection
Later required photo etched mask is obtained.
As an example, please referring to the S1 step in Fig. 1 in step 1), successively carried out according to Parameter Conditions needed for photoetching
Light source optimization, exposure mask optimization and light source-exposure mask optimization.
As an example, Parameter Conditions needed for described may include: photoetching equipment model, photoetching equipment hardware parameter, light source
Numerical aperture, light source polarization direction and photoresist film layer structure etc., certainly, in other examples, the required Parameter Conditions
It can also include the parameter for more influencing whether photo etched mask design.
As an example, may include steps of according to the light source optimization that Parameter Conditions needed for photoetching carry out:
Primary light source is provided, the shape of the primary light source can be set according to actual needs, it is preferable that described first
Beginning light source is the circular light spot with special diameter；
The primary light source is subjected to the first suboptimization, the primary light source is roughly divided into certain amount net
The fenestral fabric of lattice, it is preferable that in the present embodiment, the primary light source is divided into roughly during the first suboptimization
One is latticed；
The light source after first suboptimization is up-sampled into (up-sampled), described in after the first suboptimization
Light source is refined as second latticed, and the quantity of the second latticed middle grid is the quantity of the described first latticed middle grid
Integral multiple more than or equal to 2, it is preferable that in the present embodiment, described first it is latticed include 16 × 16 matrix grid, described
Two it is latticed include 32 × 32 matrix grid；
The light source after up-sampling is subjected to the second suboptimization, second suboptimization is not related to light source blurring
(source blur) processing；It should be noted that second suboptimization should be including not being related to all excellent of light source blurring
Change project, and the project dawn known to those skilled in the art optimized needed for the second suboptimization, will not enumerate herein；
The light source after second suboptimization is subjected to light source Fuzzy processing, specifically, by the institute after the second suboptimization
State light source and carry out light source Fuzzy processing and refer between the second suboptimization, the light source when through exposure mask with through-hole,
Be only capable of being irradiated to the exposure mask rear (side far from light source) region corresponding with the through-hole, and the second suboptimization it
Afterwards, for the light source when by with through-hole, light source can not only be irradiated to exposure mask rear area corresponding with the through-hole
Domain can also be irradiated to the annular region of exposure mask rear through-hole periphery one fixed width；And
Light source blurring treated light source is subjected to pupil rendering, is this by the specific method that light source carries out pupil rendering
Field technical staff is known, is not repeated herein.
As an example, including the following steps: according to the exposure mask optimization that Parameter Conditions needed for photoetching carry out
Original mask is provided, could be formed with the figure of certain predetermined shape in the original mask；
The original mask is carried out to continuously transmit exposure mask (continuous transmission mask, CTM) optimization,
The specific method that the original mask continuously transmit exposure mask optimization is known by those skilled in the art, is not repeated herein；
It is implanted into Sub-resolution assist features (SRAF) by continuously transmitting in the exposure mask after exposure mask optimizes, is planted in the mask
The specific method for entering the Sub-resolution assist features is known by those skilled in the art, is not repeated herein；
The exposure mask for being implanted with the Sub-resolution assist features is carried out to the optimization detected without mask rule, with
Several irregular flagpole patterns being intervally arranged are formed in the exposure mask, and the exposure mask examine without mask rule
The specific method for surveying the optimization of (mask rule check, MRC) is known by those skilled in the art, is not repeated herein；And
The optimization that the exposure mask for being formed with irregular flagpole pattern is proceeded through to mask rule detection, by described in not
Regular flagpole pattern is modified to rectangular strip figure, certainly, in other examples, after mask rule inspection optimization described in
The figure formed in exposure mask may be a kind of shape of any other rule, for example circle, triangle, ellipse and diamond shape etc.
Deng.
During carrying out light source-exposure mask optimization according to Parameter Conditions needed for photoetching, the specific method of light source optimization with it is upper
The specific method for stating the light source optimization only carried out according to Parameter Conditions needed for photoetching is roughly the same, referring specifically to foregoing teachings,
It is not repeated herein；During carrying out light source-exposure mask optimization according to Parameter Conditions needed for photoetching, the specific method of exposure mask optimization
With it is above-mentioned according to Parameter Conditions needed for photoetching only to carry out the specific method of exposure mask optimization roughly the same, referring specifically to aforementioned interior
Hold, is not repeated herein.But it should be recognized that the Parameter Conditions needed for according to photoetching carry out light source-exposure mask optimization process
In, light source optimization with exposure mask optimization cooperate with optimization, in this process, light source optimization and exposure mask optimize not two independences not
Relevant optimization process.After light source optimization, exposure mask optimization and light source-exposure mask optimization, can be obtained needed for exposure
The relevant parameter of light source and exposure mask.
In step 2), the S2 step in Fig. 1 is please referred to, sets exposure parameter according to optimum results.
As an example, the exposure parameter set according to optimum results is needed to be known by those skilled in the art, it is not another herein
One enumerates.It should be noted that the required exposure parameter can be substantially achieved after step 1) is completed.Of the invention
Photo etched mask optimum design method optimizes by using light source, exposure mask optimization and light source-exposure mask optimal setting exposure parameter, can be with
Realize the automated setting of photo etched mask, entire design process is fairly simple, flexible, and accuracy is higher.
In step 3), the S3 step in Fig. 1 is please referred to, the critical size according to device repairs the exposure parameter
Just.
As an example, the critical size of the device may include every normal detector of a batch in actual production technical process
The critical size of part, the critical size of the device first pass through the measurement collection in actual production technical process in advance and obtain.
As an example, the critical size of the device is preparatory measurement collection, it can be in advance by these passes
Key size is created as a large database concept in case using at any time.In step 3), it is only necessary to will be described in these in large database concept
The critical size of device is imported into corresponding system, can be carried out according to the critical size of the device to the exposure parameter
Amendment.By the measurement collection in actual production technical process in advance in photo etched mask optimum design method of the invention, in light
Carving only need to be introduced directly into critical size and be modified to exposure parameter during mask design, can save existing photoetching and cover
In film design method critical size collect, filtering and remove and etc., thus simplify design procedure, save design time and at
This.
In step 4), the S4 step in Fig. 1 is please referred to, exports photo etched mask model according to revised exposure parameter.
As an example, the specific method according to revised exposure parameter output photo etched mask model is those skilled in the art institute
Know, is not repeated herein.It should be noted that the photo etched mask model exported herein is only initial stage photo etched mask model, and
Not eventually for the photo etched mask model of photoetching process, it is subsequent also need to carry out certain amendment can just obtain it is final required
Photo etched mask.
In step 5), the S5 step in Fig. 1 is please referred to, optical near-correction is carried out to the photo etched mask model
(OPC)。
As an example, can be to the photo etched mask during carrying out optical near-correction to the photo etched mask model
Line width deviation (become larger or become smaller), corner sphering or wire length deviation (elongated or shortening) in model etc. are modified.Optics
The specific method of near-correction is known by those skilled in the art, is not repeated herein.
In step 6), the S6 step in Fig. 1 is please referred to, the photo etched mask model after optical near-correction is carried out
Electrically verifying detection obtains required photo etched mask after electrically verifying detection passes through.
As an example, being carried out to the photo etched mask model after optical near-correction main during electrical verifying detects
The electric conductivity of each electric connection structure is detected, to judge situations such as whether there is open circuit or short circuit in each electric connection structure.Electricity
Property verifying detection specific method dawn known to those skilled in the art, be not repeated herein.
As an example, when detecting that electric connection structure has open circuit or short circuit in the photo etched mask model in step 6)
When, step 6) further includes the steps that carrying out hot spot reparation to the photo etched mask model later.Directly optical adjacent can be repaired
The photo etched mask model after just carries out hot spot reparation to obtain final photo etched mask, can also be to optical proximity correction after
Photo etched mask model carry out hot spot reparation, and will correct during associated restoration parameter feedback to optical proximity correction corresponding
Error.The specific method of hot spot reparation is known by those skilled in the art to be not repeated herein.
As shown in Figures 2 to 4, if desired (for example, rectangular graph 11 as shown in Figure 2 in photo etched mask is modified
Optical near-correction), it is to need using the entire rectangular graph 11 in existing photo etched mask design method as correcting object,
The rectangular graph 11 cannot be split into several parts to be adjusted separately, the precision of adjustment is lower.And in the application, it can
With photo etched mask optimum design method through the invention, exposure light as shown in Figure 3 is obtained by adjusting optimization light source
Intensity thus may be used so as to form the exposure light 12 in spot distribution as shown in Figure 4 on the rectangular graph 11
It is modified respectively with the rectangular graph 11 is divided into several regions and (exposure light 12 for example, is searched to each dotted speed
The rectangular graph 11 at place is modified respectively), so as to greatly improve modified accuracy.
Embodiment two
Referring to Fig. 5, the present invention also provides a kind of photo etched mask Optimum Design System 2, the photo etched mask optimization design
System 2 is for executing the photo etched mask optimum design method as described in embodiment one, the photo etched mask Optimum Design System 2
It include: light source optimization module 20, exposure mask optimization module 21, light source-exposure mask optimization module 22, exposure parameter setting module 23, number
According to memory module 24, correction module 25, model output module 26, optical proximity correction module 27 and verifying detection module 28；Its
In, the light source optimization module 20 is used to carry out light source optimization according to Parameter Conditions needed for photoetching；The exposure mask optimization module 21
For carrying out exposure mask optimization according to Parameter Conditions needed for photoetching；The light source-exposure mask optimization module 22 and the light source optimize mould
Block 20 and the exposure mask optimization module 21 are connected, for Parameter Conditions needed for foundation photoetching to the light source optimization module 20
And the exposure mask after the optimization of exposure mask optimization module 21 carries out further light source optimization and exposure mask optimization；The exposure parameter
Setting module 23 is connected with the light source-exposure mask optimization module 22, for according to optimization configuration settings exposure parameter；The number
The critical size of memory device is used for according to memory module 24；The correction module 25 and the exposure parameter setting module and described
Data memory module is connected, and is modified for the critical size according to device to the exposure parameter；The model output
Module 26 is connected with the correction module 25, for exporting photo etched mask model according to revised exposure parameter；The light
It learns near-correction module 27 to be connected with the model output module 26, it is adjacent that the photo etched mask model for that will export carries out optics
Nearly correction；The verifying detection module 28 is connected with the optical near-correction module 27, and being used for will be after optical near-correction
The photo etched mask model carry out electrically verifying detection.
As an example, the data memory module 24 is also connected with semiconductor production equipment (not shown), for receiving
And store the critical size of semiconductor production equipment device of measurement collection in actual production technical process.The device
Critical size may include every normal detection device of a batch in actual production technical process critical size, the data storage
Module 24 carries out to measure when key dimension measurement during the semiconductor production equipment executes production craft step
To critical size collect and store.
As an example, the verifying detection module 28 predominantly detect it is described after the optical near-correction module 27 corrects
The electric conductivity of each electric connection structure in photo etched mask model, to judge in each electric connection structure with the presence or absence of open circuit or short circuit etc.
Situation.
As an example, as shown in fig. 6, the photo etched mask Optimum Design System 2 further includes hot spot repair module 29, it is described
Hot spot repair module 29 is connected with the verifying detection module 28 and the optical near-correction module 27, for testing described
Card detection module 28 detects when electric connection structure has open circuit or short circuit in the photo etched mask model to the photo etched mask
Model carries out hot spot reparation.
As an example, the hot spot repair module 29 can be directly to the photo etched mask model after optical proximity correction
Hot spot reparation is carried out to obtain final photo etched mask, hot spot can also be repaired to parameter feedback to the optical near-correction mould
Block 27 is to correct corresponding error.
In conclusion the present invention provides a kind of photo etched mask optimum design method and system, the photo etched mask optimization is set
Meter method includes the following steps: 1) successively to carry out light source optimization, exposure mask optimization and light source-exposure mask according to Parameter Conditions needed for photoetching
Optimization；2) exposure parameter is set according to optimum results；3) exposure parameter is modified according to the critical size of device；4)
Photo etched mask model is exported according to revised exposure parameter；5) optical near-correction is carried out to the photo etched mask model；And
6) electrically verifying detection is carried out to the photo etched mask model after optical near-correction, is obtained after electrically verifying detection passes through
Required photo etched mask.Photo etched mask optimum design method of the invention optimizes by using light source, exposure mask optimization and light source-are covered
The automated setting of photo etched mask may be implemented in film optimal setting exposure parameter, and entire design process is fairly simple, flexible, essence
Exactness is higher；Pass through the measurement collection in actual production technical process in advance in photo etched mask optimum design method of the invention,
Only critical size need to be introduced directly into photo etched mask design process to be modified exposure parameter, can save existing light
Carve mask designing method in critical size collect, filtering and remove and etc., thus simplify design procedure, save design time and
Cost.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of photo etched mask optimum design method, which is characterized in that the photo etched mask optimum design method includes following step
It is rapid:
1) light source optimization, exposure mask optimization and light source-exposure mask optimization are successively carried out according to Parameter Conditions needed for photoetching；
2) exposure parameter is set according to optimum results；
3) exposure parameter is modified according to the critical size of device；
4) photo etched mask model is exported according to revised exposure parameter；
5) optical near-correction is carried out to the photo etched mask model；And
6) electrically verifying detection is carried out to the photo etched mask model after optical near-correction, after electrically verifying detection passes through
Obtain required photo etched mask.
2. photo etched mask optimum design method according to claim 1, which is characterized in that parameter needed for photoetching in step 1)
Condition includes: photoetching equipment model, photoetching equipment hardware parameter, source numerical aperture, light source polarization direction and photoresist film layer
Structure.
3. photo etched mask optimum design method according to claim 1, which is characterized in that in step 1), according to photoetching institute
The light source optimization for needing Parameter Conditions to carry out includes the following steps:
Primary light source is provided；
The primary light source is subjected to the first suboptimization, it is latticed that the primary light source is divided into first；
The light source after first suboptimization is up-sampled, the light source after the first suboptimization is refined as the second net
Trellis, the quantity of the second latticed middle grid are the integer for being more than or equal to 2 of the quantity of the described first latticed middle grid
Times；
The light source after up-sampling is subjected to the second suboptimization, second suboptimization is not related to light source Fuzzy processing；
The light source after second suboptimization is subjected to light source Fuzzy processing；And
Light source blurring treated light source is subjected to pupil rendering.
4. photo etched mask optimum design method according to claim 3, described first it is latticed include 16 × 16 matrix
Grid, described second it is latticed include 32 × 32 matrix grid.
5. photo etched mask optimum design method according to claim 1, which is characterized in that in step 1), according to photoetching institute
The exposure mask optimization for needing Parameter Conditions to carry out includes the following steps:
Original mask is provided；
The original mask is carried out to continuously transmit exposure mask optimization；
Sub-resolution assist features are implanted by continuously transmitting in the exposure mask after exposure mask optimizes；
The exposure mask for being implanted with the Sub-resolution assist features is carried out to the optimization detected without mask rule, in institute
It states and forms several irregular flagpole patterns being intervally arranged in exposure mask；And
The optimization that the exposure mask for being formed with irregular flagpole pattern is proceeded through to mask rule detection, will be described irregular
Flagpole pattern is modified to rectangular strip figure.
6. photo etched mask optimum design method according to claim 1, which is characterized in that the critical size of the device is pre-
It first passes through the measurement collection in actual production technical process and obtains.
7. photo etched mask optimum design method according to any one of claim 1 to 6, which is characterized in that when step 6)
In when detecting in the photo etched mask model that electric connection structure has open circuit or short circuit, further include to the light after step 6)
Carve the step of exposure mask model carries out hot spot reparation.
8. a kind of photo etched mask Optimum Design System, which is characterized in that the photo etched mask Optimum Design System includes:
Light source optimization module, for carrying out light source optimization according to Parameter Conditions needed for photoetching；
Exposure mask optimization module, for carrying out exposure mask optimization according to Parameter Conditions needed for photoetching；
Light source-exposure mask optimization module is connected with the light source optimization module and the exposure mask optimization module, for according to photoetching
Required Parameter Conditions carry out the exposure mask after the light source optimization module and exposure mask optimization module optimization further
Light source optimization and exposure mask optimization；
Exposure parameter setting module is connected with the light source-exposure mask optimization module, for according to optimization configuration settings exposure ginseng
Number；
Data memory module, the critical size for memory device；
Correction module is connected with the exposure parameter setting module and the data memory module, for the pass according to device
Key size is modified the exposure parameter；
Model output module is connected with the correction module, for exporting photo etched mask mould according to revised exposure parameter
Type；
Optical near-correction module is connected with the model output module, and the photo etched mask model for that will export carries out light
Learn near-correction；And
Detection module is verified, is connected with the optical near-correction module, for by the photoetching after optical near-correction
Exposure mask model carries out electrically verifying detection.
9. photo etched mask Optimum Design System according to claim 8, which is characterized in that the data memory module also with
Semiconductor production equipment is connected, and measures in actual production technical process for receiving and storing the semiconductor production equipment
The critical size of the device of collection.
10. photo etched mask Optimum Design System according to claim 8 or claim 9, which is characterized in that the photo etched mask optimization
Designing system further includes hot spot repair module, is connected with the verifying detection module and the optical proximity correction module, is used
In when the verifying detection module detects in the photo etched mask model that electric connection structure has open circuit or short circuit to described
Photo etched mask model carries out hot spot reparation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711085050.4A CN109752918B (en) | 2017-11-07 | 2017-11-07 | Photoetching mask optimization design method and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711085050.4A CN109752918B (en) | 2017-11-07 | 2017-11-07 | Photoetching mask optimization design method and system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109752918A true CN109752918A (en) | 2019-05-14 |
| CN109752918B CN109752918B (en) | 2023-04-25 |
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| CN113093476A (en) * | 2020-01-09 | 2021-07-09 | 中芯国际集成电路制造(北京)有限公司 | Optimization method of photoetching process and photoetching method |
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