CN109752918B - Photoetching mask optimization design method and system - Google Patents
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Abstract
The invention provides a photoetching mask optimal design method and a photoetching mask optimal design system, wherein the photoetching mask optimal design method comprises the following steps: 1) Sequentially performing light source optimization, mask optimization and light source-mask optimization according to parameter conditions required by photoetching; 2) Setting exposure parameters according to the optimization result; 3) Correcting exposure parameters according to the critical dimension of the device; 4) Outputting a photoetching mask model according to the corrected exposure parameters; 5) Performing optical proximity correction on the photomask model; and 6) performing electrical verification detection on the optical proximity corrected lithography mask model, and obtaining the required lithography mask after the electrical verification detection passes. The photoetching mask optimization design method can realize automatic setting of the photoetching mask by adopting light source optimization, mask optimization and light source-mask optimization to set exposure parameters, and has the advantages of simpler and flexible whole design process and higher accuracy.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing, and particularly relates to a photoetching mask optimization design method and system.
Background
In the existing semiconductor process, the design of the photoetching mask is related to the subsequent whole semiconductor process, and has a critical influence on the manufacture of products and the yield of the products. The existing method for designing the photoetching mask generally comprises the following steps:
1) Designing a photoetching mask test pattern;
2) A photolithographic mask test pattern down line (tape out);
3) Collecting critical dimensions after exposure;
4) Filtering and removing the collected critical dimensions to obtain the required critical dimensions;
5) Correcting the photomask model according to the obtained critical dimension;
6) Outputting the corrected photoetching mask model;
7) Performing optical proximity correction on the lithography mask model; the method comprises the steps of,
8) Performing electrical verification detection on the photoetching mask model subjected to optical proximity correction;
9) And carrying out hot spot repair on the photoetching mask model.
According to the steps, in the design process of the photoetching mask, the photoetching mask is required to be designed and offline, and the steps of collecting, filtering, clearing and the like of critical dimensions are required to be carried out, so that the whole design process is complex and tedious, the time consumption is long, and the cost is greatly increased.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a method and a system for optimizing a lithographic mask, which are used for solving the problems of complex and complicated design process, long time consumption and high cost in the design process of the lithographic mask in the prior art.
To achieve the above and other related objects, the present invention provides a lithographic mask optimization design method, comprising the steps of:
1) Sequentially performing light source optimization, mask optimization and light source-mask optimization according to parameter conditions required by photoetching;
2) Setting exposure parameters according to the optimization result;
3) Correcting the exposure parameters according to the critical dimensions of the device;
4) Outputting a photoetching mask model according to the corrected exposure parameters;
5) Performing optical proximity correction on the lithography mask model; the method comprises the steps of,
6) And performing electrical verification detection on the photoetching mask model subjected to optical proximity correction, and obtaining the required photoetching mask after the electrical verification detection passes.
As a preferred embodiment of the present invention, the parameter conditions required for photolithography in step 1) include: the model of the photoetching machine, hardware parameters of the photoetching machine, numerical aperture of a light source, polarization direction of the light source and photoresist film layer structure.
In a preferred embodiment of the present invention, in step 1), the optimization of the light source according to the parameter conditions required by the photolithography includes the following steps:
providing an initial light source;
performing first optimization on the initial light source to divide the initial light source into a first grid shape;
up-sampling (up-sampled) the light source after the first optimization to refine the light source after the first optimization into a second grid shape, wherein the number of grids in the second grid shape is an integer multiple of 2 or more of the number of grids in the first grid shape;
performing a second optimization on the upsampled light source, the second optimization not involving a source blurriness (source blur) process;
performing light source blurring treatment on the light source subjected to the second optimization; the method comprises the steps of,
and performing pupil rendering on the light source subjected to the light source blurring treatment.
As a preferred embodiment of the present invention, the first mesh comprises a 16×16 matrix mesh, and the second mesh comprises a 32×32 matrix mesh.
In a preferred embodiment of the present invention, in step 1), the mask optimization according to the parameter conditions required by the photolithography includes the following steps:
providing an initial mask;
performing Continuous Transmission Mask (CTM) optimization on the initial mask;
implanting sub-resolution auxiliary patterns (SRAF) into the mask after optimizing the continuous transmission mask;
optimizing the mask implanted with the sub-resolution auxiliary pattern without mask rule detection so as to form a plurality of irregular strip patterns which are distributed at intervals in the mask; the method comprises the steps of,
and optimizing the mask with the irregular bar pattern through mask rule detection so as to correct the irregular bar pattern into a rectangular bar pattern.
As a preferred embodiment of the present invention, the critical dimensions of the device are obtained in advance by measurement and collection during the actual production process.
As a preferable scheme of the invention, when the electric connection structure in the photoetching mask model is detected to have open circuit or short circuit in the step 6), the step 6) further comprises a step of repairing the hot spot of the photoetching mask model.
The invention also provides a photoetching mask optimal design system, which comprises:
the light source optimization module is used for optimizing the light source according to parameter conditions required by photoetching;
the mask optimization module is used for performing mask optimization according to parameter conditions required by lithography;
the light source-mask optimizing module is connected with the light source optimizing module and the mask optimizing module and is used for further optimizing the light source and the mask after the mask optimizing module and the mask optimizing module are optimized according to parameter conditions required by photoetching;
the exposure parameter setting module is connected with the light source-mask optimizing module and is used for setting exposure parameters according to the optimized structure;
the data storage module is used for storing the key size of the device;
the correction module is connected with the exposure parameter setting module and the data storage module and is used for correcting the exposure parameters according to the key size of the device;
the model output module is connected with the correction module and is used for outputting a photoetching mask model according to the corrected exposure parameters;
the optical proximity correction module is connected with the model output module and is used for carrying out optical proximity correction on the output photoetching mask model; the method comprises the steps of,
and the verification and detection module is connected with the optical proximity correction module and is used for carrying out electrical verification and detection on the photoetching mask model subjected to optical proximity correction.
As a preferred embodiment of the present invention, the data storage module is further connected to a semiconductor production apparatus for receiving and storing critical dimensions of the devices collected by the semiconductor production apparatus during the actual production process.
As a preferable scheme of the invention, the photoetching mask optimal design system further comprises a hot spot repairing module, which is connected with the verification detection module and the optical proximity correction module and is used for repairing hot spots of the photoetching mask model when the verification detection module detects that the electric connection structure in the photoetching mask model is broken or short-circuited.
As described above, the method and system for optimally designing the photoetching mask have the following beneficial effects: the photoetching mask optimization design method can realize automatic setting of the photoetching mask by adopting light source optimization, mask optimization and light source-mask optimization to set exposure parameters, and the whole design process is simpler and more flexible and has higher accuracy; in the optimal design method of the photoetching mask, the exposure parameters are corrected by measuring and collecting in the actual production process in advance and only by directly importing the key size in the photoetching mask design process, so that the steps of key size collection, filtering, cleaning and the like in the traditional photoetching mask design method can be omitted, thereby simplifying the design steps and saving the design time and cost.
Drawings
FIG. 1 is a flow chart of a method for optimizing a lithographic mask according to a first embodiment of the invention.
Fig. 2 is a schematic structural diagram of a rectangular pattern in a lithographic mask designed in the method for optimizing a lithographic mask according to the first embodiment of the present invention.
FIG. 3 is a graph showing the relationship between the intensity of the exposure light and the center distance of the rectangular pattern designed in the method for optimizing the design of the lithography mask according to the first embodiment of the present invention.
Fig. 4 is a schematic structural diagram showing a method for optimizing a photolithographic mask according to a first embodiment of the present invention, in which an exposure light source is subdivided into a plurality of points to correct different portions of a rectangular pattern.
Fig. 5 to 6 are block diagrams showing a light source mask optimizing design system according to a second embodiment of the present invention.
Description of the component reference numerals
11. Rectangular pattern
12. Exposure light source
2. Light source mask optimization design system
20. Light source optimization module
21. Mask optimization module
22. Light source-mask optimizing module
23. Exposure parameter setting module
24. Data storage module
25. Correction module
26. Model output module
27. Optical proximity correction module
28. Verification detection module
29. Hot spot repair module
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1 to 6. It should be noted that, the illustrations provided in the present embodiment are merely schematic illustrations of the basic concepts of the present invention, and only the components related to the present invention are shown in the illustrations, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
Example 1
Referring to fig. 1, the invention provides a lithographic mask optimization design method, which comprises the following steps:
1) Sequentially performing light source optimization, mask optimization and light source-mask optimization according to parameter conditions required by photoetching;
2) Setting exposure parameters according to the optimization result;
3) Correcting the exposure parameters according to the critical dimensions of the device;
4) Outputting a photoetching mask model according to the corrected exposure parameters,
5) Performing optical proximity correction on the lithography mask model; the method comprises the steps of,
6) And performing electrical verification detection on the photoetching mask model subjected to optical proximity correction, and obtaining the required photoetching mask after the electrical verification detection passes.
As an example, in step 1), referring to step S1 in fig. 1, light source optimization, mask optimization and light source-mask optimization are sequentially performed according to parameter conditions required for lithography.
As an example, the required parameter conditions may include: the type of the photolithography tool, hardware parameters of the photolithography tool, numerical aperture of the light source, polarization direction of the light source, and photoresist film layer structure, etc., and of course, in other examples, the required parameter conditions may further include parameters that affect the design of the photolithography mask.
As an example, the optimization of the light source according to the parameter conditions required for lithography may comprise the steps of:
providing an initial light source, wherein the shape of the initial light source can be set according to actual needs, and preferably, the initial light source is a circular light spot with a specific diameter;
performing a first optimization on the initial light source to roughly divide the initial light source into a grid-like structure with a certain number of grids, and preferably, in this embodiment, roughly dividing the initial light source into a first grid shape in the process of the first optimization;
upsampling (up-sampled) the light source after the first optimization to refine the light source after the first optimization into a second grid shape, wherein the number of grids in the second grid shape is an integer multiple of 2 or more of the number of grids in the first grid shape, and preferably, in this embodiment, the first grid shape comprises a 16×16 matrix grid, and the second grid shape comprises a 32×32 matrix grid;
performing a second optimization on the upsampled light source, the second optimization not involving a source blurriness (source blur) process; it should be noted that, the second optimization should include all optimization items that do not involve the blurring of the light source, and the items that are needed for the second optimization are known to those skilled in the art and are not listed here;
the light source after the second optimization is subjected to light source blurring processing, specifically, the light source after the second optimization is subjected to light source blurring processing, namely, in the second optimization, the light source can only irradiate the area corresponding to the through hole behind the mask (the side far away from the light source) when passing through the mask with the through hole, and after the second optimization, the light source can irradiate the area corresponding to the through hole behind the mask and also can irradiate the annular area with a certain width on the periphery of the through hole behind the mask when passing through the mask; the method comprises the steps of,
the specific method for performing pupil rendering on the light source after the light source blurring treatment is known to those skilled in the art, and will not be described here.
As an example, mask optimization according to the parameter conditions required for lithography comprises the following steps:
providing an initial mask, wherein a pattern with a certain preset shape can be formed in the initial mask;
the specific method of optimizing the initial mask for continuous transmission mask (continuous transmission mask, CTM) is known to those skilled in the art and will not be described here;
implanting sub-resolution auxiliary patterns (SRAF) into the mask after optimizing the continuous transmission mask, wherein the specific method for implanting the sub-resolution auxiliary patterns into the mask is known to the person skilled in the art and is not described in detail herein;
the mask implanted with the sub-resolution auxiliary pattern is optimized without mask rule detection so as to form a plurality of irregular strip patterns which are arranged at intervals in the mask, and the specific method for optimizing the mask without mask rule detection (MRC) is known to the person skilled in the art and is not further described herein; the method comprises the steps of,
and (3) optimizing the mask formed with the irregular stripe pattern through mask rule detection so as to modify the irregular stripe pattern into a rectangular stripe pattern, wherein in other examples, the pattern formed in the mask after mask rule detection optimization can be any other regular shape, such as a circle, a triangle, an ellipse, a diamond and the like.
In the process of optimizing the light source and the mask according to the parameter conditions required by the lithography, the specific method of optimizing the light source is approximately the same as the specific method of optimizing the light source only according to the parameter conditions required by the lithography, and the specific reference is made to the foregoing, and will not be repeated here; in the process of performing the light source-mask optimization according to the parameter conditions required by the lithography, the specific method of mask optimization is substantially the same as the specific method of performing only mask optimization according to the parameter conditions required by the lithography, and the detailed description is omitted herein. However, it should be noted that, in the light source-mask optimization process according to the parameter conditions required by lithography, the light source optimization and the mask optimization are cooperatively optimized, and in this process, the light source optimization and the mask optimization are not two independent optimization processes. After light source optimization, mask optimization and light source-mask optimization, the relevant parameters of the light source and the mask required by exposure can be obtained.
In step 2), please refer to step S2 in fig. 1, the exposure parameters are set according to the optimization result.
As an example, exposure parameters that need to be set according to the optimization result are known to those skilled in the art and are not listed here. It should be noted that, after step 1) is completed, the desired exposure parameters can be basically obtained. The photoetching mask optimization design method can realize automatic setting of the photoetching mask by adopting light source optimization, mask optimization and light source-mask optimization to set exposure parameters, and has the advantages of simpler and flexible whole design process and higher accuracy.
In step 3), please refer to step S3 in fig. 1, the exposure parameters are modified according to the critical dimensions of the device.
As an example, the critical dimensions of the device may include critical dimensions of each batch of normal inspection devices during the actual manufacturing process, which are obtained in advance by measurement and collection during the actual manufacturing process.
As an example, the critical dimensions of the device are collected as measured in advance, and these critical dimensions may be built up in advance into a large database for ready use. In step 3), the exposure parameters can be modified according to the critical dimensions of the devices only by importing the critical dimensions of the devices in a large database into a corresponding system. In the optimal design method of the photoetching mask, the exposure parameters are corrected by measuring and collecting in the actual production process in advance and only by directly importing the key size in the photoetching mask design process, so that the steps of key size collection, filtering, cleaning and the like in the traditional photoetching mask design method can be omitted, thereby simplifying the design steps and saving the design time and cost.
In step 4), please refer to step S4 in fig. 1, outputting a photolithography mask model according to the corrected exposure parameters.
By way of example, the specific method of outputting a lithographic mask model in accordance with the corrected exposure parameters is known to those skilled in the art and will not be described here. It should be noted that, the output lithography mask model is only an initial lithography mask model, and is not a lithography mask model that is ultimately used in the lithography process, and a certain correction is required to be performed later to obtain the finally required lithography mask.
In step 5), please refer to step S5 in fig. 1, optical Proximity Correction (OPC) is performed on the lithographic mask model.
As an example, the line width deviation (increase or decrease), the corner rounding, the line length deviation (increase or decrease), or the like in the photolithography mask model may be corrected in the process of performing optical proximity correction on the photolithography mask model. Specific methods of optical proximity correction are known to those skilled in the art and will not be described here.
In step 6), please refer to step S6 in fig. 1, electrical verification detection is performed on the optical proximity corrected mask model, and the required mask is obtained after the electrical verification detection is passed.
As an example, in the process of performing electrical verification and detection on the photo-etching mask model after optical proximity correction, the electrical conductivity of each electrical connection structure is mainly detected, so as to determine whether a condition such as open circuit or short circuit exists in each electrical connection structure. Specific methods of electrical verification testing are known to those skilled in the art and will not be described in detail herein.
As an example, when it is detected in step 6) that the electrical connection structure in the photolithography mask model has an open circuit or a short circuit, step 6) further includes a step of performing hot spot repair on the photolithography mask model. The hot spot repair can be directly performed on the photoetching mask model after the optical proximity correction to obtain a final photoetching mask, or the hot spot repair can be performed on the photoetching mask model after the optical proximity correction, and relevant repair parameters are fed back to the optical proximity correction process to correct corresponding errors. Specific methods of hotspot repair are known to those skilled in the art and will not be discussed further herein.
As shown in fig. 2 to 4, if the rectangular pattern 11 shown in fig. 2 in the photomask needs to be corrected (for example, optical proximity correction), in the conventional design method of the photomask, the whole rectangular pattern 11 needs to be used as a correction object, and the rectangular pattern 11 cannot be divided into a plurality of parts to be adjusted respectively, so that the adjustment accuracy is low. In this application, the exposure light intensity shown in fig. 3 can be obtained by adjusting the optimized light source by the optimized design method of the photolithography mask of the present invention, so that the exposure light 12 distributed in a dot shape as shown in fig. 4 can be formed on the rectangular pattern 11, and the rectangular pattern 11 can be divided into a plurality of areas to be respectively corrected (for example, the rectangular pattern 11 at each dot-shaped fast-searching exposure light 12 is respectively corrected), thereby greatly improving the accuracy of correction.
Example two
Referring to fig. 5, the present invention further provides a mask optimizing design system 2, where the mask optimizing design system 2 is configured to execute the mask optimizing design method according to the first embodiment, and the mask optimizing design system 2 includes: a light source optimizing module 20, a mask optimizing module 21, a light source-mask optimizing module 22, an exposure parameter setting module 23, a data storage module 24, a correction module 25, a model output module 26, an optical proximity correction module 27 and a verification detection module 28; wherein, the light source optimization module 20 is used for optimizing the light source according to parameter conditions required by lithography; the mask optimization module 21 is used for performing mask optimization according to parameter conditions required by lithography; the light source-mask optimizing module 22 is connected with the light source optimizing module 20 and the mask optimizing module 21, and is used for further optimizing the light source and the mask after the mask optimizing module 20 and the mask optimizing module 21 are optimized according to parameter conditions required by lithography; the exposure parameter setting module 23 is connected with the light source-mask optimizing module 22 and is used for setting exposure parameters according to an optimized structure; the data storage module 24 is used for storing critical dimensions of the device; the correction module 25 is connected with the exposure parameter setting module and the data storage module, and is used for correcting the exposure parameters according to the critical dimensions of the device; the model output module 26 is connected with the correction module 25 and is used for outputting a lithography mask model according to the corrected exposure parameters; the optical proximity correction module 27 is connected to the model output module 26, and is configured to perform optical proximity correction on the output lithography mask model; the verification and detection module 28 is connected to the optical proximity correction module 27, and is configured to perform electrical verification and detection on the lithographic mask model after optical proximity correction.
By way of example, the data storage module 24 is also coupled to semiconductor manufacturing equipment (not shown) for receiving and storing critical dimensions of devices collected by the semiconductor manufacturing equipment during actual manufacturing processes. The critical dimensions of the devices may include critical dimensions of each batch of normally inspected devices during the actual manufacturing process, and the data storage module 24 collects and stores the measured critical dimensions as they are measured during the manufacturing process steps performed by the semiconductor manufacturing facility.
As an example, the verification detecting module 28 mainly detects the conductivity of each electrical connection structure in the photolithography mask model after the optical proximity correction module 27 corrects, so as to determine whether there is a case of disconnection or short circuit in each electrical connection structure.
As an example, as shown in fig. 6, the optimized design system 2 for a lithography mask further includes a hotspot repairing module 29, where the hotspot repairing module 29 is connected to the verification detecting module 28 and the optical proximity correction module 27, and is configured to perform hotspot repairing on the lithography mask model when the verification detecting module 28 detects that the electrical connection structure in the lithography mask model has an open circuit or a short circuit.
As an example, the hotspot repairing module 29 may directly perform hotspot repairing on the optical proximity corrected mask model to obtain a final mask, or may feed back hotspot repairing parameters to the optical proximity correction module 27 to correct the corresponding error.
In summary, the present invention provides a method and a system for optimizing a lithographic mask, where the method for optimizing a lithographic mask includes the following steps: 1) Sequentially performing light source optimization, mask optimization and light source-mask optimization according to parameter conditions required by photoetching; 2) Setting exposure parameters according to the optimization result; 3) Correcting the exposure parameters according to the critical dimensions of the device; 4) Outputting a photoetching mask model according to the corrected exposure parameters; 5) Performing optical proximity correction on the lithography mask model; and 6) performing electrical verification detection on the photoetching mask model subjected to the optical proximity correction, and obtaining the required photoetching mask after the electrical verification detection passes. The photoetching mask optimization design method can realize automatic setting of the photoetching mask by adopting light source optimization, mask optimization and light source-mask optimization to set exposure parameters, and the whole design process is simpler and more flexible and has higher accuracy; in the optimal design method of the photoetching mask, the exposure parameters are corrected by measuring and collecting in the actual production process in advance and only by directly importing the key size in the photoetching mask design process, so that the steps of key size collection, filtering, cleaning and the like in the traditional photoetching mask design method can be omitted, thereby simplifying the design steps and saving the design time and cost.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (9)
1. The optimal design method of the photoetching mask is characterized by comprising the following steps of:
1) Sequentially performing light source optimization, mask optimization and light source-mask optimization according to parameter conditions required by photoetching; wherein, the optimization of the light source according to the parameter conditions required by photoetching comprises the following steps: providing an initial light source; performing first optimization on the initial light source to divide the initial light source into a first grid shape; upsampling the light source after the first optimization to refine the light source after the first optimization into a second grid shape, wherein the number of grids in the second grid shape is an integer multiple of more than or equal to 2 of the number of grids in the first grid shape; performing a second optimization on the light source after upsampling, wherein the second optimization does not involve light source blurring; performing light source blurring treatment on the light source subjected to the second optimization; and performing pupil rendering on the light source subjected to the light source blurring treatment; in the process of optimizing the light source and the mask according to parameter conditions required by lithography, the light source is optimized and the mask is optimized cooperatively; after light source optimization, mask optimization and light source-mask optimization, obtaining relevant parameters of a light source and a mask required by exposure;
2) Setting exposure parameters according to the optimization result;
3) Correcting the exposure parameters according to the critical dimensions of the device;
4) Outputting a photoetching mask model according to the corrected exposure parameters;
5) Performing optical proximity correction on the lithography mask model; the method comprises the steps of,
6) And performing electrical verification detection on the photoetching mask model subjected to optical proximity correction, and obtaining the required photoetching mask after the electrical verification detection passes.
2. The method according to claim 1, wherein the parameter conditions required for photolithography in step 1) include: the model of the photoetching machine, hardware parameters of the photoetching machine, numerical aperture of a light source, polarization direction of the light source and photoresist film layer structure.
3. The lithographic mask optimization design method according to claim 1, wherein the first grid comprises a 16 x 16 matrix grid and the second grid comprises a 32 x 32 matrix grid.
4. The method according to claim 1, wherein in step 1), the mask optimization according to the parameter conditions required by the lithography comprises the following steps:
providing an initial mask;
performing continuous transmission mask optimization on the initial mask;
implanting sub-resolution auxiliary patterns into the mask after optimizing the continuous transmission mask;
optimizing the mask implanted with the sub-resolution auxiliary pattern without mask rule detection so as to form a plurality of irregular strip patterns which are distributed at intervals in the mask; the method comprises the steps of,
and optimizing the mask with the irregular bar pattern through mask rule detection so as to correct the irregular bar pattern into a rectangular bar pattern.
5. The method of claim 1, wherein the critical dimensions of the device are obtained by measurement and collection during actual manufacturing process.
6. The method according to any one of claims 1 to 5, wherein when it is detected in step 6) that there is a break or a short circuit in an electrical connection structure in the mask model, step 6) is followed by a step of performing hot spot repair on the mask model.
7. A lithographic mask optimization design system for implementing the lithographic mask optimization design method according to any one of claims 1 to 6, characterized in that the lithographic mask optimization design system comprises:
the light source optimization module is used for optimizing the light source according to parameter conditions required by photoetching;
the mask optimization module is used for performing mask optimization according to parameter conditions required by lithography;
the light source-mask optimizing module is connected with the light source optimizing module and the mask optimizing module and is used for further optimizing the light source and the mask after the mask optimizing module and the mask optimizing module are optimized according to parameter conditions required by photoetching;
the exposure parameter setting module is connected with the light source-mask optimizing module and is used for setting exposure parameters according to an optimizing result;
the data storage module is used for storing the key size of the device;
the correction module is connected with the exposure parameter setting module and the data storage module and is used for correcting the exposure parameters according to the key size of the device;
the model output module is connected with the correction module and is used for outputting a photoetching mask model according to the corrected exposure parameters;
the optical proximity correction module is connected with the model output module and is used for carrying out optical proximity correction on the output photoetching mask model; the method comprises the steps of,
and the verification and detection module is connected with the optical proximity correction module and is used for carrying out electrical verification and detection on the photoetching mask model subjected to optical proximity correction.
8. The lithographic mask optimization system of claim 7, wherein said data storage module is further coupled to a semiconductor manufacturing facility for receiving and storing critical dimensions of devices collected by said semiconductor manufacturing facility during actual manufacturing processes.
9. The optimal design system of claim 7 or 8, further comprising a hot spot repair module, connected to the verification detection module and the optical proximity correction module, for performing hot spot repair on the mask model when the verification detection module detects that the electrical connection structure in the mask model is open or shorted.
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