CN109742196A - A kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell - Google Patents
A kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell Download PDFInfo
- Publication number
- CN109742196A CN109742196A CN201811575463.5A CN201811575463A CN109742196A CN 109742196 A CN109742196 A CN 109742196A CN 201811575463 A CN201811575463 A CN 201811575463A CN 109742196 A CN109742196 A CN 109742196A
- Authority
- CN
- China
- Prior art keywords
- cell piece
- welding
- low
- solar cell
- heterojunction solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of low-temperature welding methods of monocrystalline silicon heterojunction solar cell, include the following steps；In the intrinsic amorphous silicon layer and P-type non-crystalline silicon layer of one layer of 8-12nm thickness of Surface Texture of cell piece；In the intrinsic amorphous silicon layer and N-shaped amorphous silicon layer of one layer of 18-22nm of backside deposition of c-Si piece；TCO conductive film is deposited on the two sides of cell piece using sputtering technology；Ag electrode is made on the two sides of cell piece using screen printing technique；The surface of cell piece is cleared up, cell piece is placed into weldment the head and the tail in a manner of imbrication and is overlapped；The cell piece in weldment is welded using welding；After weld seam is cooling, thermal insulation material is removed, surrounding between cell piece is uniformly smeared into marine glue and carries out frame encapsulation.The present invention provides a kind of low-temperature welding methods of monocrystalline silicon heterojunction solar cell, HIT battery silver paste in welding is greatly reduced to fall off, it greatly reduces HIT battery and burns TCO film in welding, greatly reduce HIT battery fragmentation in welding, increase production capacity.
Description
Technical field
The present invention relates to low-temperature bounding method field, specially a kind of low-temperature welding side of monocrystalline silicon heterojunction solar cell
Method.
Background technique
The heterogeneous structure, assembly high conversion efficiency of monocrystalline silicon heterojunction solar cell is known as next-generation big rule by photovoltaic industry
One of mould industrialization key technology, a big advantage of the heterogeneous structure, assembly of monocrystalline silicon heterojunction solar cell are its generating electricity on two sides spies
Property it is very good, be a kind of ideal double-side solar cell component, in practical applications, solar cell when being made use low-temperature silver
Slurry and low-temperature sintering jet deposition technique, cause its own to need to be attached with low-temperature welding mode, general in actual production
Logical welding medium is that welding (Sn60%PB40%) welding temperature is high and HIT battery is ultra-thin silicon substrate fusion structure, in addition HIT battery
Itself operational characteristic (low temperature) and silicon wafer (silicon substrate) sheet technology (reducing cost), be by conventional use of silicon wafer at this stage from
180 μm are thinned to 150 μm, realize that silicon wafer cost and battery cost will be greatly reduced in silicon wafer sheet, are advantageously implemented photovoltaic electric
Pond component cheap internet access；
Pure tin will generate tin pest phenomenon in the case where being lower than minus 13 degree, and scolding tin becomes gray tin, and quality is as powder, once occur
Tin pest can be infected quickly, so that the component desoldering being welded, can not restore, be occurred in the solar module of tangible early stage
Cross this phenomenon, especially in extremely frigid zones, environment temperature is lower than minus 40 degree, extremely in the case where can reach minus 0 degree, it is general
How much scolding tin gray tin phenomenon can all occurs, and the output power of component is caused to decline, and the decline of power caused by gray tin is irrecoverable
's；
Due to HIT low temperature manufacturing process itself and cell piece silicon substrate rationally be thinned etc. characteristics, this self character is in production process
In can generate a large amount of fragmentation/crack/burning etc., process abnormality etc. is bad when in order to solve production, needs to pass through low-temperature welding
Emphasis solves the problems, such as fragmentation of the Thin film cell in welding.
Summary of the invention
It is above-mentioned to solve the purpose of the present invention is to provide a kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell
The problem of being proposed in background technique.
To achieve the above object, the invention provides the following technical scheme: a kind of low temperature of monocrystalline silicon heterojunction solar cell
Welding method includes the following steps；
Step 1: the intrinsic amorphous silicon layer and P-type non-crystalline silicon layer of one layer of 8-12nm thickness of Surface Texture in cell piece；
Step 2: the intrinsic amorphous silicon layer and N-shaped amorphous silicon layer of one layer of 18-22nm of backside deposition in c-Si piece；
Step 3: depositing TCO conductive film on the two sides of cell piece using sputtering technology；
Step 4: making Ag electrode on the two sides of cell piece using screen printing technique；
Step 5: the surface to cell piece is cleared up, cell piece is placed into weldment the head and the tail in a manner of imbrication and is overlapped；
Step 6: being welded using welding to the cell piece in weldment；
Step 7: wrapping up cell piece after the completion of welding using thermal insulation material, making weld seam Slow cooling；
Step 8: removing thermal insulation material after weld seam is cooling, surrounding between cell piece is uniformly smeared into marine glue and carries out frame envelope
Dress.
Preferably, in step 6, welding is that two kinds of element compositions of addition bismuth metal, scolding tin content are 92-95% in scolding tin,
Metal bi content is 5-8%.
Preferably, in step 6, welding be the unleaded quaternary scolding tin of tin silver copper bismuth, tin silver copper bismuth quaternary alloy Pb-free solder by
Four kinds of element compositions of tin silver copper bismuth, bi content 1.5-4%, copper content 0.5-1%, silver content 2-4%, Theil indices 91-96%.
Preferably, for step 1 to step 8, whole techniques are accomplished below at 200 DEG C.
Preferably, in step 6, scaling powder auxiliary welding can be used and welded.
Compared with prior art, the beneficial effects of the present invention are: the present invention provides a kind of monocrystalline silicon heterojunction sun electricity
The low-temperature welding method in pond,
1. present invention substantially reduces HIT batteries in welding, silver paste falls off (cross weld)；
TCO film (burning) is burnt in welding 2. present invention substantially reduces HIT batteries；
3. present invention substantially reduces HIT battery welding when fragmentation；
4. reducing manufacturing cost invention increases production capacity.
Specific embodiment
Below in conjunction with the embodiment of the present invention, technical solution in the embodiment of the present invention is clearly and completely retouched
It states, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the present invention
In embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
Embodiment 1:
The present invention provides a kind of technical solution: a kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell, including following step
Suddenly；
Step 1: the intrinsic amorphous silicon layer and P-type non-crystalline silicon layer of one layer of 8nm thickness of Surface Texture in cell piece；
Step 2: the intrinsic amorphous silicon layer and N-shaped amorphous silicon layer of one layer of 18nm of backside deposition in c-Si piece；
Step 3: depositing TCO conductive film on the two sides of cell piece using sputtering technology；
Step 4: making Ag electrode on the two sides of cell piece using screen printing technique；
Step 5: the surface to cell piece is cleared up, cell piece is placed into weldment the head and the tail in a manner of imbrication and is overlapped；
Step 6: being welded using welding to the cell piece in weldment, scaling powder auxiliary welding can be used and welded；
Welding is that two kinds of element compositions of addition bismuth metal, scolding tin content are 92% in scolding tin, and metal bi content is 8%, and bismuth metal is more
Remaining electrons displacement in low temperature tin, to avoid the generation of tin pest；
Step 7: wrapping up cell piece after the completion of welding using thermal insulation material, making weld seam Slow cooling；
Step 8: removing thermal insulation material after weld seam is cooling, surrounding between cell piece is uniformly smeared into marine glue and carries out frame envelope
Dress.
Embodiment 2:
A kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell, includes the following steps；
Step 1: the intrinsic amorphous silicon layer and P-type non-crystalline silicon layer of one layer of 9nm thickness of Surface Texture in cell piece；
Step 2: the intrinsic amorphous silicon layer and N-shaped amorphous silicon layer of one layer of 19nm of backside deposition in c-Si piece；
Step 3: depositing TCO conductive film on the two sides of cell piece using sputtering technology；
Step 4: making Ag electrode on the two sides of cell piece using screen printing technique；
Step 5: the surface to cell piece is cleared up, cell piece is placed into weldment the head and the tail in a manner of imbrication and is overlapped；
Step 6: being welded using welding to the cell piece in weldment, scaling powder auxiliary welding can be used and welded；
Welding is that two kinds of element compositions of addition bismuth metal, scolding tin content are 95% in scolding tin, and metal bi content is 5%, and bismuth metal is more
Remaining electrons displacement in low temperature tin, to avoid the generation of tin pest；
Step 7: wrapping up cell piece after the completion of welding using thermal insulation material, making weld seam Slow cooling；
Step 8: removing thermal insulation material after weld seam is cooling, surrounding between cell piece is uniformly smeared into marine glue and carries out frame envelope
Dress.
Embodiment 3:
A kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell, includes the following steps；
Step 1: the intrinsic amorphous silicon layer and P-type non-crystalline silicon layer of one layer of 10nm thickness of Surface Texture in cell piece；
Step 2: the intrinsic amorphous silicon layer and N-shaped amorphous silicon layer of one layer of 20nm of backside deposition in c-Si piece；
Step 3: depositing TCO conductive film on the two sides of cell piece using sputtering technology；
Step 4: making Ag electrode on the two sides of cell piece using screen printing technique；
Step 5: the surface to cell piece is cleared up, cell piece is placed into weldment the head and the tail in a manner of imbrication and is overlapped；
Step 6: being welded using welding to the cell piece in weldment, scaling powder auxiliary welding can be used and welded；
Welding is the unleaded quaternary scolding tin of tin silver copper bismuth, and tin silver copper bismuth quaternary alloy Pb-free solder is by four kinds of element groups of tin silver copper bismuth
At, bi content 1.5%, copper content 0.5%, silver content 2%, Theil indices 96%, the unleaded quaternary scolding tin of tin silver copper bismuth considers weldering
Fusing point is connect, low-temperature characteristics, the mobility of scolding tin, the factors such as the retrospective of scolding tin and fatigue life can be that photovoltaic module exist
Use under rugged environment provides more perfect welding；
Step 7: wrapping up cell piece after the completion of welding using thermal insulation material, making weld seam Slow cooling；
Step 8: removing thermal insulation material after weld seam is cooling, surrounding between cell piece is uniformly smeared into marine glue and carries out frame envelope
Dress.
Embodiment 4:
A kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell, includes the following steps；
Step 1: the intrinsic amorphous silicon layer and P-type non-crystalline silicon layer of one layer of 11nm thickness of Surface Texture in cell piece；
Step 2: the intrinsic amorphous silicon layer and N-shaped amorphous silicon layer of one layer of 21nm of backside deposition in c-Si piece；
Step 3: depositing TCO conductive film on the two sides of cell piece using sputtering technology；
Step 4: making Ag electrode on the two sides of cell piece using screen printing technique；
Step 5: the surface to cell piece is cleared up, cell piece is placed into weldment the head and the tail in a manner of imbrication and is overlapped；
Step 6: being welded using welding to the cell piece in weldment, scaling powder auxiliary welding can be used and welded；
Welding is the unleaded quaternary scolding tin of tin silver copper bismuth, and tin silver copper bismuth quaternary alloy Pb-free solder is by four kinds of element groups of tin silver copper bismuth
At bi content 4%, copper content 1%, silver content 3%, Theil indices 92%, it is molten that the unleaded quaternary scolding tin of tin silver copper bismuth considers welding
Point, low-temperature characteristics, the mobility of scolding tin, the factors such as the retrospective of scolding tin and fatigue life can be photovoltaic module severe
In the environment of use more perfect welding is provided；
Step 7: wrapping up cell piece after the completion of welding using thermal insulation material, making weld seam Slow cooling；
Step 8: removing thermal insulation material after weld seam is cooling, surrounding between cell piece is uniformly smeared into marine glue and carries out frame envelope
Dress.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (5)
1. a kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell, which is characterized in that include the following steps；
Step 1: the intrinsic amorphous silicon layer and P-type non-crystalline silicon layer of one layer of 8-12nm thickness of Surface Texture in cell piece；
Step 2: the intrinsic amorphous silicon layer and N-shaped amorphous silicon layer of one layer of 18-22nm of backside deposition in c-Si piece；
Step 3: depositing TCO conductive film on the two sides of cell piece using sputtering technology；
Step 4: making Ag electrode on the two sides of cell piece using screen printing technique；
Step 5: the surface to cell piece is cleared up, cell piece is placed into weldment the head and the tail in a manner of imbrication and is overlapped；
Step 6: being welded using welding to the cell piece in weldment；
Step 7: wrapping up cell piece after the completion of welding using thermal insulation material, making weld seam Slow cooling；
Step 8: removing thermal insulation material after weld seam is cooling, surrounding between cell piece is uniformly smeared into marine glue and carries out frame envelope
Dress.
2. a kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell according to claim 1, it is characterised in that: step
In rapid six, welding is two kinds of element compositions of addition bismuth metal in scolding tin, and scolding tin content is 92-95%, and metal bi content is 5-8%.
3. a kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell according to claim 1, it is characterised in that: step
In rapid six, welding is the unleaded quaternary scolding tin of tin silver copper bismuth, and tin silver copper bismuth quaternary alloy Pb-free solder is by four kinds of elements of tin silver copper bismuth
Composition, bi content 1.5-4%, copper content 0.5-1%, silver content 2-4%, Theil indices 91-96%.
4. a kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell according to claim 1, it is characterised in that: step
Rapid one arrives step 8, and whole techniques are accomplished below at 200 DEG C.
5. a kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell according to claim 1, it is characterised in that: step
In rapid six, scaling powder auxiliary welding can be used and welded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811575463.5A CN109742196A (en) | 2018-12-22 | 2018-12-22 | A kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811575463.5A CN109742196A (en) | 2018-12-22 | 2018-12-22 | A kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109742196A true CN109742196A (en) | 2019-05-10 |
Family
ID=66359601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811575463.5A Pending CN109742196A (en) | 2018-12-22 | 2018-12-22 | A kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109742196A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115255854A (en) * | 2022-08-03 | 2022-11-01 | 宁波江丰电子材料股份有限公司 | Desoldering method for target material assembly with welding defects |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379122A (en) * | 2002-01-23 | 2002-11-13 | 武汉大学 | Brightening agent for electroplated Sn-Bi alloy and its preparing process |
| CN100340685C (en) * | 2002-02-15 | 2007-10-03 | 国际商业机器公司 | Lead-free tin-silver-copper alloy solder composition |
| CN102184976A (en) * | 2011-06-10 | 2011-09-14 | 山东力诺太阳能电力股份有限公司 | Back contact heterojunction solar battery |
| JP2014527466A (en) * | 2011-08-02 | 2014-10-16 | アルファ・メタルズ・インコーポレイテッドＡｌｐｈａ Ｍｅｔａｌｓ，Ｉｎｃ． | Solder composition |
| CN105696040A (en) * | 2016-04-14 | 2016-06-22 | 中山品高电子材料有限公司 | Tin-bismuth alloy plating technology |
| CN207282506U (en) * | 2017-08-30 | 2018-04-27 | 福建钧石能源有限公司 | A kind of efficiently heterogeneous structure, assembly |
| CN108649088A (en) * | 2018-05-18 | 2018-10-12 | 东腾投资集团有限公司 | A kind of connection method of HIT solar battery sheets and HIT photovoltaic modulies |
-
2018
- 2018-12-22 CN CN201811575463.5A patent/CN109742196A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379122A (en) * | 2002-01-23 | 2002-11-13 | 武汉大学 | Brightening agent for electroplated Sn-Bi alloy and its preparing process |
| CN100340685C (en) * | 2002-02-15 | 2007-10-03 | 国际商业机器公司 | Lead-free tin-silver-copper alloy solder composition |
| CN102184976A (en) * | 2011-06-10 | 2011-09-14 | 山东力诺太阳能电力股份有限公司 | Back contact heterojunction solar battery |
| JP2014527466A (en) * | 2011-08-02 | 2014-10-16 | アルファ・メタルズ・インコーポレイテッドＡｌｐｈａ Ｍｅｔａｌｓ，Ｉｎｃ． | Solder composition |
| CN105696040A (en) * | 2016-04-14 | 2016-06-22 | 中山品高电子材料有限公司 | Tin-bismuth alloy plating technology |
| CN207282506U (en) * | 2017-08-30 | 2018-04-27 | 福建钧石能源有限公司 | A kind of efficiently heterogeneous structure, assembly |
| CN108649088A (en) * | 2018-05-18 | 2018-10-12 | 东腾投资集团有限公司 | A kind of connection method of HIT solar battery sheets and HIT photovoltaic modulies |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115255854A (en) * | 2022-08-03 | 2022-11-01 | 宁波江丰电子材料股份有限公司 | Desoldering method for target material assembly with welding defects |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1942530B1 (en) | Solar cell module | |
| JP4439477B2 (en) | Photovoltaic element and manufacturing method thereof | |
| CN110098275B (en) | Solar cell interconnect | |
| WO2007086522A1 (en) | Solar cell and manufacturing method thereof | |
| CN104157717B (en) | Preparation method of all-back electrode N-type crystalline silicon heterojunction solar cells | |
| JP2002314104A (en) | Thin film solar cell and its manufacturing method | |
| KR101283053B1 (en) | Solar cell apparatus and method of fabricating the same | |
| CN112531043A (en) | Double-sided power generation heterojunction solar cell, manufacturing method and module thereof | |
| WO2012006130A2 (en) | High performance multi-layer back contact stack for silicon solar cells | |
| CN103531646A (en) | Solar cell electrode facilitating soldering of solder strip | |
| CN109742196A (en) | A kind of low-temperature welding method of monocrystalline silicon heterojunction solar cell | |
| US20120088327A1 (en) | Methods of Soldering to High Efficiency Thin Film Solar Panels | |
| KR20140135095A (en) | Solar cell | |
| KR101633684B1 (en) | Electrodes integrated solar cell protection sheet and solar cell modules manufactured using that | |
| JP2000349325A (en) | Thin film solar battery module | |
| CN111769165A (en) | Electrode of flexible CIGS solar cell and manufacturing method | |
| WO2016131222A1 (en) | Photovoltaic component and manufacturing method thereof | |
| TWI382549B (en) | Thin film solar cell module and manufacturing method thereof | |
| CN203812888U (en) | Solar cell electrode bringing convenience to welding of solder strip | |
| CN206098421U (en) | Heterojunction solar cell and module thereof | |
| TWI404218B (en) | A thin film solar cell module capable of improving contact between front and rear electrodes, and a method of manufacturing the same | |
| TWI475707B (en) | The method for forming the contact pattern on the solar cell surface | |
| CN209880661U (en) | Packaging structure of organic solar cell | |
| CN219832668U (en) | Tin electrode for solar cell and solar cell | |
| CN111180529A (en) | Method for preparing front main grid electrode of solar cell through 3D printing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190510 |