CN219832668U - Tin electrode for solar cell and solar cell - Google Patents
Tin electrode for solar cell and solar cell Download PDFInfo
- Publication number
- CN219832668U CN219832668U CN202223406373.8U CN202223406373U CN219832668U CN 219832668 U CN219832668 U CN 219832668U CN 202223406373 U CN202223406373 U CN 202223406373U CN 219832668 U CN219832668 U CN 219832668U
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- CN
- China
- Prior art keywords
- tin
- layer
- solar cell
- metal bearing
- electrode
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 238000003466 welding Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 89
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 238000005476 soldering Methods 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 230000004907 flux Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- RSWGJHLUYNHPMX-UHFFFAOYSA-N 1,4a-dimethyl-7-propan-2-yl-2,3,4,4b,5,6,10,10a-octahydrophenanthrene-1-carboxylic acid Chemical group C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 3
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 claims description 2
- QKAJPFXKNNXMIZ-UHFFFAOYSA-N [Bi].[Ag].[Sn] Chemical compound [Bi].[Ag].[Sn] QKAJPFXKNNXMIZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910001174 tin-lead alloy Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model belongs to the technical field of solar cells, and relates to a tin electrode for a solar cell. The utility model aims to provide a tin electrode for a solar cell and the solar cell adopting the tin electrode, which have the advantages of reduced production cost and convenience in series welding.
Description
Technical Field
The utility model belongs to the technical field of solar cells, and relates to a tin electrode for a solar cell and a solar cell adopting the tin electrode.
Background
The heterojunction solar cell technology has the characteristics of low surface recombination rate, high open-circuit voltage and the like, has the advantages of high conversion efficiency, low temperature coefficient, high double-sided rate and the like, and is an important technical direction of the photovoltaic industry.
The fabrication of the electrodes of heterojunction solar cells requires the use of low temperature processes to avoid thermal decay caused by high temperatures. Therefore, the electrode is generally manufactured using high-purity silver paste to meet the process requirements and to ensure conductivity and solderability. However, the high-purity silver paste has higher cost, and the development of other materials and processes to replace the low-temperature silver paste process is one of the development directions of cost reduction and efficiency improvement in the photovoltaic industry.
Disclosure of Invention
The utility model aims to provide a tin electrode for a solar cell and the solar cell adopting the tin electrode, which have the advantages of reduced production cost and convenience in series welding.
The aim of the utility model is realized by the following technical scheme:
a tin electrode for a solar cell comprises a metal bearing layer, a tin layer arranged on the metal bearing layer and a soldering protection layer arranged on the outer surface of the tin layer.
A solar cell comprises a solar cell piece to be formed with an electrode, a silver grid arranged on a light receiving surface of the solar cell piece, a metal bearing layer arranged on a back surface of the solar cell piece, a tin layer arranged on the metal bearing layer and a soldering-assisting protective layer arranged on the outer surface of the tin layer.
Compared with the prior art, the utility model has the advantages that:
(1) The metal bearing layer is combined with the tin layer, the adhesion of the tin layer is improved by utilizing the better affinity of the metal bearing layer and the tin layer, and the tin layer is close to the tin alloy layer on the surface of the welding strip in material and is firmly welded.
(2) The soldering flux protective layer is used for protecting the tin layer, so that the surface oxidation of the tin layer is prevented, the solder strip is facilitated to be stably soldered, and no cold joint is caused.
(3) The welding-assisting protective layer is utilized to enlarge the protective area of the metal bearing layer, so that the problem that the electrode falls off from the solar cell due to overlarge side etching amount can be prevented when the metal bearing layer outside the electrode area is etched and removed.
Drawings
Fig. 1 is a schematic cross-sectional view of a tin electrode for a solar cell according to an embodiment of the present utility model after forming a metal supporting layer and a tin layer.
Fig. 2 is a schematic cross-sectional view of a solar cell according to an embodiment of the present utility model after removing a metal carrier layer outside a tin layer region.
Detailed Description
A tin electrode for a solar cell comprises a metal bearing layer, a tin layer arranged on the metal bearing layer and a soldering protection layer arranged on the outer surface of the tin layer.
The material of the soldering protecting layer is resin acid soldering flux, such as rosin soldering flux and the like.
The width of the upper surface of the metal bearing layer is larger than that of the tin layer; and the area of the upper surface of the metal bearing layer, which is not provided with a tin layer, is covered by a soldering-assisting protective layer. In one embodiment, the metal bearing layer is formed by performing full-area film plating on the back surface of the solar cell by adopting a PVD magnetron sputtering mode, a tin layer with a grid line pattern and a soldering-assisting protection layer covering the outer surface of the tin layer are formed on the metal bearing layer, the soldering-assisting protection layer can diffuse the metal bearing layer covering the edge of the tin layer (as shown in fig. 1), and then the exposed metal bearing layer is removed by chemical etching to form the tin electrode (as shown in fig. 2).
The width of one side of the upper surface of the metal bearing layer, which is not covered by the tin layer, is 0.1-1mm.
The thickness of the metal bearing layer is 0.05-0.2 mu m.
The thickness of the tin layer is 10-100 mu m.
The thickness of the welding auxiliary protective layer is 0.1-10 mu m.
The metal bearing layer is made of copper, nickel, aluminum, silver, copper alloy or aluminum alloy.
The tin layer is made of tin, tin bismuth alloy, tin bismuth silver alloy, tin silver alloy or tin lead alloy.
A solar cell comprises a solar cell piece to be formed with an electrode, a silver grid arranged on a light receiving surface of the solar cell piece, a metal bearing layer arranged on a back surface of the solar cell piece, a tin layer arranged on the metal bearing layer and a soldering-assisting protective layer arranged on the outer surface of the tin layer.
Examples:
as shown in fig. 2, a heterojunction solar cell comprises a silicon wafer 1, a front intrinsic amorphous silicon layer 2, an N-type doped semiconductor film layer 3 and a front transparent conductive film layer 4 which are arranged on a light receiving surface of the silicon wafer 1 from inside to outside in sequence, and a back intrinsic amorphous silicon layer 6, a P-type doped semiconductor film layer 7 and a back transparent conductive film layer 8 which are arranged on a back surface of the silicon wafer 1 from inside to outside in sequence. The front transparent conductive film layer 4 is provided with a silver paste grid line 5, the back transparent conductive film layer 8 is provided with a metal bearing layer 9, the metal bearing layer 9 is provided with a tin layer 10, and the upper surface and each side surface of the tin layer 10 are provided with a soldering aid protection layer 11. The width 12 of the upper surface of the metal bearing layer 9, which is not covered by the tin layer 10, is 0.15mm.
As described above, in the embodiment of the electrode structure provided by the utility model, copper is adopted as the metal bearing layer, tin-bismuth alloy is adopted as the main grid fine grid material, so that the silver consumption is saved, the adhesion force between the grid line electrode and the back transparent conductive film layer is greatly improved, the welding tension force between the grid line electrode and the welding strip is also improved, the curing speed is high, and the curing energy consumption is greatly saved.
The foregoing description of the preferred embodiment of the utility model is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the utility model.
Claims (9)
1. A tin electrode for a solar cell, characterized by: the soldering flux comprises a metal bearing layer, a tin layer arranged on the metal bearing layer and a soldering aid protective layer arranged on the outer surface of the tin layer; the width of the upper surface of the metal bearing layer is larger than that of the tin layer; and the area of the upper surface of the metal bearing layer, which is not provided with a tin layer, is covered by a soldering-assisting protective layer.
2. The tin electrode for a solar cell according to claim 1, wherein: the material of the soldering protecting layer is resin acid soldering flux.
3. The tin electrode for a solar cell according to claim 1, wherein: the width of one side of the upper surface of the metal bearing layer, which is not covered by the tin layer, is 0.1-1mm.
4. The tin electrode for a solar cell according to claim 1, wherein: the tin layer is made of tin, tin bismuth alloy, tin bismuth silver alloy, tin silver alloy or tin lead alloy.
5. The tin electrode for a solar cell according to claim 4, wherein: the metal bearing layer is made of copper, nickel, aluminum, silver, copper alloy or aluminum alloy.
6. The tin electrode for a solar cell according to any one of claims 1 to 5, wherein: the thickness of the tin layer is 10-100 mu m.
7. The tin electrode for a solar cell according to claim 6, wherein: the thickness of the metal bearing layer is 0.05-0.2 mu m.
8. The tin electrode for a solar cell according to claim 6, wherein: the thickness of the welding auxiliary protective layer is 0.1-10 mu m.
9. A solar cell using the tin electrode of any one of claims 1 to 8, characterized in that: the solar cell comprises a solar cell piece to be formed with an electrode, a silver grid arranged on a light receiving surface of the solar cell piece, a metal bearing layer arranged on a back surface of the solar cell piece, a tin layer arranged on the metal bearing layer and a soldering-assisting protective layer arranged on the outer surface of the tin layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223406373.8U CN219832668U (en) | 2022-12-19 | 2022-12-19 | Tin electrode for solar cell and solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223406373.8U CN219832668U (en) | 2022-12-19 | 2022-12-19 | Tin electrode for solar cell and solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219832668U true CN219832668U (en) | 2023-10-13 |
Family
ID=88276838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223406373.8U Active CN219832668U (en) | 2022-12-19 | 2022-12-19 | Tin electrode for solar cell and solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219832668U (en) |
-
2022
- 2022-12-19 CN CN202223406373.8U patent/CN219832668U/en active Active
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