CN109729635A - A method of enhancing ecr plasma source performance - Google Patents
A method of enhancing ecr plasma source performance Download PDFInfo
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- CN109729635A CN109729635A CN201910078140.3A CN201910078140A CN109729635A CN 109729635 A CN109729635 A CN 109729635A CN 201910078140 A CN201910078140 A CN 201910078140A CN 109729635 A CN109729635 A CN 109729635A
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- resonance region
- ecr
- hot cathode
- plasma source
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Abstract
It is a kind of enhance ecr plasma source performance method belong to low-temp plasma source application field, the principle of the invention lies in: in the resonance region of existing ECR, the primary source of space electronic is a small amount of free electron, its electronics derives from the electronics that gas ionization generates when forming plasma discharge, its electron density is limited when balance, limits the raising of plasma parameter.The present invention is on the basis of existing ecr plasma source, using pressure actively to the method for resonance region space injection electronics: on the source base of above-mentioned existing electronics, a large amount of thermoelectrons are generated using hot cathode, and enter resonant space under the electric field controls for passing through resonance region, to substantially increase the electron density of resonance region.Since the electron density of resonance region greatly improves, ECR ionizing efficiency will further enhance, improve the performance indicators such as the beam current density in ecr plasma source.
Description
Technical field
The invention belongs to low-temp plasma source application fields, are related to a kind of by actively (following to electron cyclotron resonace
Abbreviation ECR) space injection electronics is come the method for improving plasma parameter, and the invention is suitable for ECR plasma source.
Background technique
Ecr plasma source is suitable for material and prepares and be surface-treated, and is widely used, higher plasma parameter can be into
One step enhances its service performance and application range.
Ecr plasma source at runtime, needs that microwave is allowed smoothly to reach the indoor resonant field area of vacuum, makes resonance region
Interior electronics is whirled up resonance, forms plasma.In certain application fields for needing strong plasma lines, ECR at present
The performance parameter of plasma source shows slightly insufficient, such as in the plasma radiation effect for being applied to research fusion facility inner wall
When, beam current density is lower.
In order to solve the problems, such as that ecr plasma source beam current density is lower, the present invention will be using actively to resonance region injection
The mode of electronics improves plasma beam current density.
Summary of the invention
The purpose of the present invention is to propose to improve ecr plasma source beam in such a way that active is to resonance region injection electronics
The method of current density.This method can be further improved the electron density of resonance region, enhancing resonance discharging efficiency, thus effectively
Improve the performance of plasma source.
A method of enhancing ecr plasma source performance, it is characterised in that:
On the basis of existing ecr plasma source, the method that injection electronics is forced to ECR resonance region space by active,
Improve plasma source performance.Particular by near ECR resonance region install additional for resonance region injection electronics hot cathode,
And the electric field for having to form hot cathode and anode passes through the space of resonance region.Such as cathode and anode are placed in resonance
Area up and down both sides (cathode it is upper or under be ok), or cathode is placed against resonance area edge.Voltage between cathode and anode
In 20V to 200V range.
Further, the material of the hot cathode just refers to existing hot cathode material common accordingly, as tungsten, tungsten-bast alloy,
The materials such as tantalum, lanthanum hexaboride.The anode material is exactly conventional conductor material, such as copper, stainless steel, molybdenum.
Further, the shape of the hot cathode and anode should not influence plasma and microwave by, for example, cylinder
Shape, helical it is tubular or with the shapes such as wave guide cross-section similar shape used in ECR.
Further, the heating method of the hot cathode can be itself electrified regulation mode, be also possible to other heating sides
The modes such as formula, such as external heat source baking, high-frequency heating, infrared radiation heating, laser heating.
The principle of the invention lies in: in the resonance region of existing ECR, the primary source of space electronic is a small amount of free electron,
Its electronics derives from the electronics that gas ionization generates when forming plasma discharge, its electron density is limited when balance, limits
The raising of plasma parameter.The present invention is actively infused to resonance region space on the basis of existing ecr plasma source, using pressure
Enter the method for electronics: on the source base of above-mentioned existing electronics, generating a large amount of thermoelectrons using hot cathode, and passing through resonance
Enter resonant space under the electric field controls in area, to substantially increase the electron density of resonance region.Since the electronics of resonance region is close
Degree greatly improves, and will further enhance ECR ionizing efficiency, improves the performance indicators such as the beam current density in ecr plasma source.
The present invention has the advantages that
Using the method for actively injecting electronics to resonance region space is forced, enhances ECR ionizing efficiency, can significantly improve
Gas ions performance.
Detailed description of the invention
Fig. 1 is the principle of the present invention schematic diagram.
In figure: 1. anodes；2. microwave window；3. magnet exciting coil；4. vacuum chamber；5. hot cathode；6. plasma beam；7. micro-
Sonic wave guide pipe；8. electric field lines；9. microwave source；10. resonance region plasma
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
As shown in Figure 1, existing typical case's ecr plasma source is usually mainly by microwave window 2, magnet exciting coil 3, vacuum chamber
4, microwave plumbing 7 and microwave source 9 form.When being passed through the low pressure gas of 0.01Pa to 50Pa in vacuum chamber 4, work as microwave
It is total in the magnetic field that magnet exciting coil 3 is formed when the microwave that source 9 exports enters vacuum chamber 4 by microwave plumbing 7 and microwave window 2
Occur electron cyclotron resonace under same-action, form resonance region plasma 10, and issue downwards under magnetic field gradient effect etc. from
Daughter beam 6.
The present invention is the installation hot cathode 5 near ECR resonance region, and has to make hot cathode 5 and the formation of anode 1
Electric field lines 8 pass through the space of resonance region, and the voltage between cathode and anode is in 20V to 200V range.Implement below in conjunction with three
Example is further described.
Embodiment 1:
On the basis of existing ecr plasma source, the hot cathode 5 of installation uses tungsten wire, and solenoid shape is made, and is placed in altogether
Shake area top.Anode 1 uses molybdenum sheet, and cylindrical shape is made, is placed against resonance region lower edge.100V electricity is loaded between anode and cathode
Pressure, hot cathode 5 are heated to 2400 DEG C of common electron emission temperature of tungsten using from electrified regulation mode, and vacuum chamber is passed through 50Pa's
Gas.The accessible highest plasma beam current density in the ecr plasma source is 5 × 1021/m2
Embodiment 2:
On the basis of existing ecr plasma source, the hot cathode 5 of installation uses lanthanum hexaboride, and cylindrical shape is made, is placed in
Resonance region is following.1 copper sheet of anode is made shape identical with wave guide cross-section, is placed in resonance region top.Add between anode and cathode
200V voltage is carried, hot cathode 5 is heated to 1500 DEG C of common electron emission temperature of lanthanum hexaboride using infrared Baking out mode,
Vacuum chamber is passed through the gas of 1.0Pa.The accessible highest plasma beam current density in the ecr plasma source is 2 × 1022/m2
Embodiment 3:
On the basis of existing ecr plasma source, the hot cathode 5 of installation uses W-REO alloys piece, and cylindrical shape is made,
It is placed against resonance region lower edge.Anode 1 uses stainless steel substrates, and cylindrical shape is made, is placed in resonance region upper limb.Between anode and cathode
20V voltage is loaded, hot cathode 5 is heated to 2000 DEG C of common electron emission temperature of Rare-Earth Tungsten, vacuum using high-frequency heating mode
Room is passed through the gas of 0.01Pa.The accessible highest plasma beam current density in the ecr plasma source is 8 × 1021/m2。
Claims (7)
1. a kind of method for enhancing ecr plasma source performance, it is characterised in that:
By installing the hot cathode for injecting electronics to resonance region additional outside ECR resonance region, and have to make hot cathode and sun
The electric field that pole is formed passes through the space of resonance region.
2. according to the method described in claim 1, it is characterized by: hot cathode and anode are placed in both sides above and below resonance region,
Or hot cathode is placed against resonance area edge.
3. according to the method described in claim 1, it is characterized by: the voltage between cathode and anode is in 20V to 200V range.
4. according to the method described in claim 1, it is characterized by: hot cathode is tungsten-bast alloy, tantalum or lanthanum hexaboride；Anode material
Material is conductor material.
5. according to the method described in claim 1, it is characterized by:, the shape of the hot cathode and anode is cylinder-shaped, helical
It is tubular or with wave guide cross-section similar shape used in ECR.
6. according to the method described in claim 1, it is characterized by: the heating method of the hot cathode be itself electrified regulation,
External heat source baking, high-frequency heating, infrared radiation heating or be laser heating.
7. according to the method described in claim 1, it is characterized by: being passed through the low pressure gas of 0.01Pa to 50Pa in vacuum chamber
When body, when the microwave of microwave source output enters vacuum chamber by microwave plumbing and microwave window, formed in magnet exciting coil
Electron cyclotron resonace occurs under the collective effect of magnetic field, forms resonance region plasma, and issue downwards under magnetic field gradient effect
The electric field lines that plasma beam, hot cathode and anode are formed pass through the space of resonance region.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910078140.3A CN109729635A (en) | 2019-01-28 | 2019-01-28 | A method of enhancing ecr plasma source performance |
| PCT/CN2019/121583 WO2020155827A1 (en) | 2019-01-28 | 2019-11-28 | Method for enhancing performance of ecr plasma source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910078140.3A CN109729635A (en) | 2019-01-28 | 2019-01-28 | A method of enhancing ecr plasma source performance |
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| CN109729635A true CN109729635A (en) | 2019-05-07 |
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| CN201910078140.3A Pending CN109729635A (en) | 2019-01-28 | 2019-01-28 | A method of enhancing ecr plasma source performance |
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| WO (1) | WO2020155827A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364060A (en) * | 2019-06-26 | 2019-10-22 | 北京航空航天大学 | It is a kind of for studying the experimental provision of magnetic coil line |
| WO2020155827A1 (en) * | 2019-01-28 | 2020-08-06 | 北京工业大学 | Method for enhancing performance of ecr plasma source |
| CN112969275A (en) * | 2021-02-03 | 2021-06-15 | 西安闪光能源科技有限公司 | Method for enhancing discharge plasma radiation to drive enhanced material |
| WO2022134656A1 (en) * | 2020-12-25 | 2022-06-30 | 上海光链电子科技有限公司 | Ionization source device for hydrogen atom maser, and hydrogen atom maser |
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| CN1028588C (en) * | 1990-03-23 | 1995-05-24 | 四川大学 | Microwave plasma generating method and equipment |
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| CN107195527B (en) * | 2017-05-11 | 2018-10-16 | 北京大学 | Hydrogen molecular ion ratio system and its method in a kind of raising ecr ion source |
| MY176543A (en) * | 2017-06-02 | 2020-08-15 | Se Corp | Method for producing magnesium hydride,power generation system using magnesium hydride, and apparatus for producing magnesium hydride |
| CN207083268U (en) * | 2017-06-20 | 2018-03-09 | 华中科技大学 | A kind of plasma producing apparatus based on hot cathode |
| CN109729635A (en) * | 2019-01-28 | 2019-05-07 | 北京工业大学 | A method of enhancing ecr plasma source performance |
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2019
- 2019-01-28 CN CN201910078140.3A patent/CN109729635A/en active Pending
- 2019-11-28 WO PCT/CN2019/121583 patent/WO2020155827A1/en active Application Filing
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| JPH0645254A (en) * | 1992-03-13 | 1994-02-18 | Limes:Kk | Method and apparatus for manufacturing amorphous silicon film |
| JPH06139979A (en) * | 1992-10-29 | 1994-05-20 | Japan Steel Works Ltd:The | Method and device for supplying electron to ecr ion source |
| CN1944704A (en) * | 2005-10-05 | 2007-04-11 | 雅铂兴业股份有限公司 | Method to coat insulation film on aluminum body of electrolytic capacitor |
| CN101916607A (en) * | 2010-07-28 | 2010-12-15 | 北京大学 | Small neutron source adopting windowless gas target |
| US8723422B2 (en) * | 2011-02-25 | 2014-05-13 | The Aerospace Corporation | Systems and methods for cylindrical hall thrusters with independently controllable ionization and acceleration stages |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020155827A1 (en) * | 2019-01-28 | 2020-08-06 | 北京工业大学 | Method for enhancing performance of ecr plasma source |
| CN110364060A (en) * | 2019-06-26 | 2019-10-22 | 北京航空航天大学 | It is a kind of for studying the experimental provision of magnetic coil line |
| WO2022134656A1 (en) * | 2020-12-25 | 2022-06-30 | 上海光链电子科技有限公司 | Ionization source device for hydrogen atom maser, and hydrogen atom maser |
| CN112969275A (en) * | 2021-02-03 | 2021-06-15 | 西安闪光能源科技有限公司 | Method for enhancing discharge plasma radiation to drive enhanced material |
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| Publication number | Publication date |
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| WO2020155827A1 (en) | 2020-08-06 |
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