CN109727925A - A kind of encapsulating structure and method improving plastic packaging Module Reliability - Google Patents
A kind of encapsulating structure and method improving plastic packaging Module Reliability Download PDFInfo
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- CN109727925A CN109727925A CN201711046577.6A CN201711046577A CN109727925A CN 109727925 A CN109727925 A CN 109727925A CN 201711046577 A CN201711046577 A CN 201711046577A CN 109727925 A CN109727925 A CN 109727925A
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- power chip
- copper
- connecting line
- clad plate
- plastic packaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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Abstract
The present invention provides a kind of encapsulating structure and method for improving plastic packaging Module Reliability, includes at least: ceramic copper-clad plate, power chip, the first connecting line, the second connecting line, buffer layer, metal terminal and plastic part；The ceramic copper-clad plate surface has line pattern；The power chip is fixed on the ceramic copper-clad plate surface, and the power chip is connected by first connecting line with the line pattern, and the line pattern is connected by second connecting line with the metal terminal, forms circuit structure；The buffer layer is covered in surface and the side wall of the power chip；One end of ceramic copper-clad plate described in the plastic part encapsulating, power chip, the first connecting line, the second connecting line, buffer layer and metal terminal.The present invention can play buffer function to power chip, make power chip by smaller mechanical stress and thermal stress, to improve the reliability of plastic packaging module product by increasing by one layer of buffer layer on power chip surface.
Description
Technical field
The present invention relates to encapsulation technology fields, more particularly to a kind of encapsulating structure for improving plastic packaging Module Reliability and side
Method.
Background technique
With the development of electronics technology, since Plastic Package has at low cost, simple process, is suitble to the excellent of large-scale production
Point, so that Plastic Package has become the principal mode of current civilian class microelectronic product encapsulation, the quality of microelectronic product plastic packaging
Directly affect the performance of this electronic product.
In low-power energy-kinetic energy converting system, the crucial portion that plastic packaging single tube product is converted as energy is generallyd use
Part.With the influence of end product trend toward miniaturization, plastic packaging module product gradually emerges.But due to plastic packaging module product structure
Complexity is related to the influence of many aspects such as thermodynamics, structure, mechanics during the work time, leads to the failure in use process
Rate increases.
In the prior art, the encapsulating structure of the plastic packaging module product is as shown in Figure 1, the encapsulating structure includes: described
Structure includes at least: ceramic copper-clad plate 1, power chip 2, the first connecting line 3, the second connecting line 4, metal terminal 6 and plastic packaging
Part 7；1 surface of ceramic copper-clad plate has line pattern 12；The power chip 2 is fixed on 1 surface of ceramic copper-clad plate,
The power chip 2 is connected by first connecting line 3 with the line pattern 12, and the line pattern 12 passes through described the
Two connecting lines 4 are connected with the metal terminal 6, form circuit structure；Ceramic copper-clad plate 1, power described in 7 encapsulating of plastic part
One end of chip 2, the first connecting line 3, the second connecting line 4 and metal terminal 6.
Since the ceramic copper-clad plate 1 of existing plastic packaging module product, power chip 2, connecting line 3,4 and plastic part 6 etc. are more
Kind material physical property is different, and product has amount of heat generation during the work time, therefore, under the influence of thermal energy, power
Chip 2 will receive the stress from plastic part 6, lead to its failure.And product be also likely to be present during the installation process plastic part 6 by
It to external force, then is transmitted on power chip 2, causes the irreversible damage of mechanicalness.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of raising plastic packaging Module Reliabilities
Encapsulating structure and method, for solve the power chip in plastic packaging module product in the prior art installation and the course of work hold
The problem of failing vulnerable to external force.
In order to achieve the above objects and other related objects, the present invention provides a kind of encapsulation knot for improving plastic packaging Module Reliability
Structure, the structure include at least: ceramic copper-clad plate, power chip, the first connecting line, the second connecting line, buffer layer, metal terminal
And plastic part；
The ceramic copper-clad plate surface has line pattern；
The power chip is fixed on the ceramic copper-clad plate surface, the power chip by first connecting line with
The line pattern is connected, and the line pattern is connected by second connecting line with the metal terminal, forms circuit knot
Structure；
The buffer layer is covered in surface and the side wall of the power chip；
Ceramic copper-clad plate described in the plastic part encapsulating, power chip, the first connecting line, the second connecting line, buffer layer with
And one end of metal terminal.
A kind of scheme of optimization of the encapsulating structure of plastic packaging Module Reliability, the ceramic copper-clad plate are improved as the present invention
The layers of copper in the ceramic layer front and back is prepared including ceramic layer and respectively, and the power chip is fixed on the front
Layers of copper surface, the positive layers of copper have line pattern.
The scheme that a kind of optimization of the encapsulating structure of plastic packaging Module Reliability is improved as the present invention, will using etching technique
The positive layers of copper etches to form line pattern.
A kind of scheme of optimization of the encapsulating structure of plastic packaging Module Reliability is improved as the present invention, the power chip is logical
It crosses solder and is fixed on the ceramic copper-clad plate surface.
The scheme that a kind of optimization of the encapsulating structure of plastic packaging Module Reliability is improved as the present invention, using ultrasonic bond work
One end of first connecting line is connected by skill with the power chip, the other end is connected with the line pattern；It uses simultaneously
One end of second connecting line is connected by ultrasonic bond technique with the line pattern, the other end and the metal terminal phase
Even.
A kind of scheme of optimization of the encapsulating structure of plastic packaging Module Reliability, the buffer layer material are improved as the present invention
For silica gel.
A kind of scheme of optimization of the encapsulating structure of plastic packaging Module Reliability, first connecting line are improved as the present invention
It is aluminum steel with the second connecting line.
The present invention also provides a kind of packaging method for improving plastic packaging Module Reliability, the packaging method includes:
Prepare the ceramic copper-clad plate that surface has line pattern；
Power chip is fixed on the ceramic copper-clad plate surface；
The power chip and the line pattern are connected using the first connecting line, connects the line using the second connecting line
Road pattern and metal terminal；
Buffer layer is covered on the surface of the power chip and side wall；
After buffer layer solidification, the plastic part is poured, thus ceramic copper-clad plate, power chip described in encapsulating, the
One end of one connecting line, the second connecting line, buffer layer and metal terminal.
The scheme that a kind of optimization of the packaging method of plastic packaging Module Reliability is improved as the present invention, using high temperature sintering skill
Art prepares the ceramic copper-clad plate, and the ceramic copper-clad plate includes ceramic layer and prepared respectively in the ceramic layer front and back
The layers of copper in face etches the positive layers of copper to form line pattern using etching technique, and the power chip is fixed on described
Positive layers of copper surface.
The scheme that a kind of optimization of the packaging method of plastic packaging Module Reliability is improved as the present invention, using ultrasonic bond work
One end of first connecting line is connected by skill with the power chip, the other end is connected with the line pattern；It uses simultaneously
One end of second connecting line is connected by ultrasonic bond technique with the line pattern, the other end and the metal terminal phase
Even.
A kind of scheme of optimization of the packaging method of plastic packaging Module Reliability, the buffer layer material are improved as the present invention
For silica gel.
As described above, the encapsulating structure and method of raising plastic packaging Module Reliability of the invention, have the advantages that
1, using the buffer layer in encapsulating structure of the invention, the heat in plastic packaging material cooling procedure to power chip can be reduced
Stress improves encapsulation yield；
2, can be when plastic packaging module receive external force and squeezes, shakes using the buffer layer in encapsulating structure of the invention, buffering
From external stress impact, achieve the purpose that protect power chip, reduces machinery of the plastic packaging module in transport, installation process
Stress failures；
3, thermal stress can be reduced using packaging method of the invention, power chip can generate big calorimetric during the work time
Amount, is radiated, when plastic part expands in thermal histories, generation is answered by ceramic copper-clad plate, buffer layer and plastic part
Power can be buffered by buffer layer.
Detailed description of the invention
Fig. 1 is existing plastic packaging module package structure diagram.
Fig. 2 is the package structure diagram that the present invention improves plastic packaging Module Reliability.
Component label instructions
1 ceramic copper-clad plate
11 ceramic layers
12 positive layers of copper (line pattern)
The layers of copper at 13 back sides
2 power chips
3 first connecting lines
4 second connecting lines
5 buffer layers
6 metal terminals
7 plastic parts
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to attached drawing.It should be noted that only the invention is illustrated in a schematic way for diagram provided in the present embodiment
Basic conception, only shown in schema then with related component in the present invention rather than component count, shape when according to actual implementation
Shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its component cloth
Office's kenel may also be increasingly complex.
As shown in Fig. 2, the encapsulating structure is extremely the present embodiment provides a kind of encapsulating structure for improving plastic packaging Module Reliability
It less include: ceramic copper-clad plate 1, power chip 2, the first connecting line 3, the second connecting line 4, buffer layer 5, metal terminal 6 and modeling
Sealing 7 etc..
1 surface of ceramic copper-clad plate has line pattern 12；The power chip 2 is fixed on the ceramic copper-clad plate 1
Surface, the power chip 2 are connected by first connecting line 3 with the line pattern 12, and the line pattern 12 passes through
Second connecting line 4 is connected with the metal terminal 6, first connecting line 3, power chip 2, line pattern 12, second
Connecting line 4, metal terminal 6 form circuit structure；The buffer layer 5 is covered in surface and the side wall of the power chip 2；It is described
Ceramic copper-clad plate 1 described in 7 encapsulating of plastic part, power chip 2, the first connecting line 3, the second connecting line 4, buffer layer 5 and metal
One end of terminal 6.
It should be noted that the power chip 2 by the first connecting line 3 specifically with which position phase of line pattern 12
Which position of company and second connecting line, 4 connection line pattern 12, is determined by specific circuit types, unlimited herein.
As an example, the ceramic copper-clad plate 1 includes ceramic layer 11 and is prepared respectively in the ceramic layer front and back
The layers of copper 12,13 in face, that is, the ceramic copper-clad plate 1 is from bottom to top successively are as follows: the layers of copper 13 at the back side, ceramic layer 11, positive copper
Layer 12.The power chip 2 is fixed on 12 surface of positive layers of copper, and the positive layers of copper 12 has line pattern.
Therefore, on the one hand, the positive layers of copper 12 may be used as the supporting layer of the power chip 2, on the other hand, figure
The positive layers of copper 12 of case can be used as a part of route of circuit structure, play the role of connection and port output.It is described
Ceramic layer 11 can be then to realize the effects of being electrically isolated.The layers of copper 13 at the back side can be connected with devices such as extraneous radiators,
So as to increase the heat dissipation of entire module, the reliability of module is improved.
As an example, the ceramic copper-clad layer 1 can be obtained using high-sintering process, it is of course also possible to use other
Suitable technique obtains, herein with no restrictions.
As an example, the positive etching of layers of copper 12 can be formed line pattern using etching technique.Certainly, at it
In his embodiment, positive layers of copper 12, shape can also be patterned using other suitable means (such as the technologies such as laser ablation)
At line pattern.In the present embodiment, the positive etching of layers of copper 12 is formed by line pattern, concrete operations using etching technique
Process is substantially are as follows: and front layers of copper surface coats photoresist now, then patterns the photoresist by exposure, developing process,
Then using photoresist as exposure mask, using dry etching or wet etching process etching not by the layers of copper of the photoresist overlay,
Until positive layers of copper is worn in etching, until exposing the ceramic layer 11, photoresist is finally removed, so that positive layers of copper be changed
For required line pattern 22.
It is covered as an example, the power chip 2 can be fixed on the ceramics by solder (using high-temperature soldering mode)
1 surface of copper sheet.Certainly, in other embodiments, it also can use other suitable bonding modes the power chip 2 is fixed
It is unlimited herein on 1 surface of ceramic copper-clad plate.
The type of the power chip 2 is unlimited, such as can be insulated gate bipolar transistor (IGBT), two poles of fast recovery
Manage (FRD) or MOSFET chip etc..
As an example, as shown in Fig. 2, using ultrasonic bond technique by one end of first connecting line 3 and the power
Chip 2 is connected, the other end is connected with the line pattern 12；Use ultrasonic bond technique by second connecting line 4 simultaneously
One end is connected with the line pattern 12, the other end is connected with the metal terminal 6, to realize connection inside circuit structure.
Further, first connecting line 3 can be connected with the second connecting line 4 for aluminum steel or other suitable metals
Line, such as copper wire etc. are unlimited herein.In the present embodiment, it is preferred to use aluminum steel is as first connecting line 3 and the second connecting line
4。
It should be noted that the buffer layer 5 needs to cover all the power chip 2, support size will exceed institute
The size of power chip 2 is stated, in this way, power chip 2 can sustain the pressure from all directions, from damage.
As an example, the buffer layer 5 can be any suitable material with high viscosity, soft, do not do herein
Limitation.In the present embodiment, preferably silica gel is as 5 material of buffer layer.It, can be with by buffer layer 5 to the buffer function of power chip 2
Thermal stress and mechanical stress that power chip 2 is born are reduced, the reliability of entire plastic packaging module is improved.
The plastic part 7 is for ceramic copper-clad plate 1, power chip 2 described in encapsulating, the first connecting line 3 and the second connection
One end of line 4, buffer layer 5 and metal terminal 6.It can be completely cut off by the plastic part 7 inside and outside, make circuit modular, pass through
The output signal of circuit in module is transmitted to external circuitry by the other end of exposed metal terminal 6.
The present invention also provides a kind of packaging methods for improving plastic packaging Module Reliability, can form above-mentioned envelope using this method
Assembling structure, the packaging method include:
Firstly, preparation surface has the ceramic copper-clad plate 1 of line pattern 12.
Then, power chip 2 is fixed on 1 surface of ceramic copper-clad plate.
Then, the power chip 2 and the line pattern 12 are connected using the first connecting line 3, utilizes the second connecting line 4
Connect the line pattern 12 and metal terminal 6.
Buffer layer 5 is covered on the surface of the power chip 2 and side wall again；Buffer layer 5 can be covered using gluing process
It covers on power chip 2, the buffer layer 5 needs to be completely covered 2 top of power chip, and coverage area during dispensing
It needs to form reliable bonding beyond 2 range of power chip, to guarantee to protect power chip 2 when pouring plastic part 7.
Finally, the plastic part 7 is poured, thus ceramic copper-clad plate 1, power described in encapsulating after the buffer layer 5 solidification
One end of chip 2, the first connecting line 3, the second connecting line 4, buffer layer 5 and metal terminal 6.
As an example, preparing the ceramic copper-clad plate 1 using high temperature sintering technique, the ceramic copper-clad plate 1 includes ceramics
Layer 11 and layers of copper 12,13 in the ceramic layer front and back is prepared respectively, using etching technique by the positive copper
12 etching of layer forms line pattern, and the power chip 2 is fixed on 12 surface of positive layers of copper.
As an example, one end of first connecting line 3 is connected with the power chip 2 using ultrasonic bond technique,
The other end is connected with the line pattern 12；Simultaneously using ultrasonic bond technique by one end of second connecting line 4 with it is described
Line pattern 12 is connected, the other end is connected with the metal terminal 6.
As an example, 5 material of buffer layer is silica gel.
In conclusion the present invention provides a kind of encapsulating structure and method for improving plastic packaging Module Reliability, include at least: pottery
Porcelain copper-clad plate, power chip, the first connecting line, the second connecting line, buffer layer, metal terminal and plastic part；The ceramics cover
Copper sheet surface has line pattern；The power chip is fixed on the ceramic copper-clad plate surface, and the power chip passes through institute
It states the first connecting line to be connected with the line pattern, the line pattern passes through second connecting line and the metal terminal phase
Even, circuit structure is formed；The buffer layer is covered in surface and the side wall of the power chip；It makes pottery described in the plastic part encapsulating
Porcelain copper-clad plate, power chip, the first connecting line, the second connecting line, buffer layer and metal terminal one end.The present invention is in power
One layer of buffer layer is completely covered in chip surface, can play buffer function to power chip using the buffer layer, make power core
Piece is by smaller mechanical stress and thermal stress, to improve the reliability of plastic packaging module product.
So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (11)
1. a kind of encapsulating structure for improving plastic packaging Module Reliability, which is characterized in that the encapsulating structure includes at least: ceramics cover
Copper sheet, power chip, the first connecting line, the second connecting line, buffer layer, metal terminal and plastic part；
The ceramic copper-clad plate surface has line pattern；
The power chip is fixed on the ceramic copper-clad plate surface, the power chip by first connecting line with it is described
Line pattern is connected, and the line pattern is connected by second connecting line with the metal terminal, forms circuit structure；
The buffer layer is covered in surface and the side wall of the power chip；
Ceramic copper-clad plate described in the plastic part encapsulating, power chip, the first connecting line, the second connecting line, buffer layer and gold
Belong to one end of terminal.
2. the encapsulating structure according to claim 1 for improving plastic packaging Module Reliability, it is characterised in that: the ceramic copper-clad
Plate includes ceramic layer and prepares the layers of copper in the ceramic layer front and back respectively, the power chip be fixed on it is described just
The layers of copper surface in face, the positive layers of copper have line pattern.
3. the encapsulating structure according to claim 2 for improving plastic packaging Module Reliability, it is characterised in that: use etching technique
It etches the positive layers of copper to form line pattern.
4. the encapsulating structure according to claim 1 for improving plastic packaging Module Reliability, it is characterised in that: the power chip
The ceramic copper-clad plate surface is fixed on by solder.
5. the encapsulating structure according to claim 1 for improving plastic packaging Module Reliability, it is characterised in that: use ultrasonic bond
One end of first connecting line is connected by technique with the power chip, the other end is connected with the line pattern；It adopts simultaneously
One end of second connecting line is connected with the line pattern with ultrasonic bond technique, the other end and the metal terminal phase
Even.
6. the encapsulating structure according to claim 1 for improving plastic packaging Module Reliability, it is characterised in that: the buffer layer material
Matter is silica gel.
7. the encapsulating structure according to claim 1 for improving plastic packaging Module Reliability, it is characterised in that: first connection
Line and the second connecting line are aluminum steel.
8. a kind of packaging method for improving plastic packaging Module Reliability, which is characterized in that the packaging method includes:
Prepare the ceramic copper-clad plate that surface has line pattern；
Power chip is fixed on the ceramic copper-clad plate surface；
The power chip and the line pattern are connected using the first connecting line, connects the line map using the second connecting line
Case and metal terminal；
Buffer layer is covered on the surface of the power chip and side wall；
After buffer layer solidification, the plastic part is poured, thus ceramic copper-clad plate, power chip described in encapsulating, the first company
Wiring, the second connecting line, buffer layer and metal terminal one end.
9. the packaging method according to claim 8 for improving plastic packaging Module Reliability, it is characterised in that: use high temperature sintering
Technology prepares the ceramic copper-clad plate, the ceramic copper-clad plate include ceramic layer and prepare respectively in the ceramic layer front and
The layers of copper at the back side etches the positive layers of copper to form line pattern using etching technique, and the power chip is fixed on institute
State positive layers of copper surface.
10. the packaging method according to claim 8 for improving plastic packaging Module Reliability, it is characterised in that: using ultrasonic key
One end of first connecting line is connected by technique with the power chip, the other end is connected with the line pattern for conjunction；Simultaneously
One end of second connecting line is connected with the line pattern using ultrasonic bond technique, the other end and the metal terminal
It is connected.
11. according to the packaging method for the raising plastic packaging Module Reliability that claim 8 is stated, it is characterised in that: the buffer layer material
Matter is silica gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN113270374A (en) * | 2021-04-30 | 2021-08-17 | 深圳芯能半导体技术有限公司 | IGBT power device |
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