CN109698139A - The real-time acquisition system of wafer defect optical photograph and acquisition method - Google Patents
The real-time acquisition system of wafer defect optical photograph and acquisition method Download PDFInfo
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- CN109698139A CN109698139A CN201811607199.9A CN201811607199A CN109698139A CN 109698139 A CN109698139 A CN 109698139A CN 201811607199 A CN201811607199 A CN 201811607199A CN 109698139 A CN109698139 A CN 109698139A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention discloses a kind of real-time acquisition systems of wafer defect optical photograph, and the system is wafer defect scanning machine, for being scanned detection to the various defects that wafer generates in a manufacturing process；Defect data analysis system, the defect data analysis system are embedded into the wafer defect scanning machine, can carry out Real Data Exchangs with wafer defect scanning system；Optical image acquisition system, the optical image acquisition system are controlled by wafer defect system, and the acquisition of optical image information is carried out to the wafer in current detection.Present invention realization analyzes and determines scanning wafer result in real time, and feeds back to the controllable operating that scanning machine carries out optical photographing function, reaches the real-time optical collection of photos of abnormal product, conducive to the timely disposition of burning issue.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, particularly relate in a kind of integrated circuit fabrication process, wafer defect
The real-time acquisition system of wafer defect optical photograph in scanning process.
The invention further relates to the real-time collecting methods of the wafer defect optical photograph.
Background technique
With the continuous diminution of semiconductor processing technology size, manufacturing process also becomes increasingly complex, the manufacture and envelope of wafer
Dress is to be related to the quite long and complex process of several hundred step process, these steps every time perfect must not carry out, pollution
Variation with material, which is incorporated into, causes the defect of wafer to lose in technique.Maintain and improve double of yields of technique and product
Conductor industry is most important.In wafer manufacturing process, defect has become the key for restricting Yield lmproved.The defect of wafer includes
Many kinds, such as short circuit, open circuit, impurity contamination etc..In general, factory will monitor in the three of technique main points, it is wafer respectively
End survey is carried out after surveying when manufacturing process completion, in wafer and when encapsulation is completed.
Semiconductor chip is manufactured since complex process, production cost are high, and with the continuous decline of technology node, to scarce
Sunken sensibility is also higher and higher；In numerous techniques, the situation for occurring product exception due to defect occurs often, it is desirable that work
Cheng Shi will quickly, efficiently, in time, then engineer takes defective data at the first time becomes key in handling problems.
Defect Scanning board is during inspecting product by random samples at present, only scanning wafer and defect report is supplied to system
Execution system is made, after manufacturing execution system judges defect report, abnormal product carries out defect through electron scanning board again
After type analysis, engineer can just be judged.For serious problem, such mode is unable to satisfy timeliness.
Summary of the invention
It, can be real technical problem to be solved by the present invention lies in a kind of real-time acquisition system of wafer defect optical photograph is provided
When acquisition wafer defect image for engineer analyze.
Another technical problem to be solved by this invention is to provide the real-time acquisition system of wafer defect optical photograph
Acquisition method.
To solve the above problems, the present invention provides a kind of real-time acquisition system of wafer defect optical photograph, the system is
Wafer defect scanning machine, for being scanned detection to the various defects that wafer generates in a manufacturing process；
Defect data analysis system, the defect data analysis system are embedded into the wafer defect scanning machine, can be with
Wafer defect scanning system carries out Real Data Exchangs；
Optical image acquisition system, the optical image acquisition system is controlled by wafer defect system, in current detection
Wafer carry out optical image information acquisition.
A further improvement is that the wafer defect scanning machine, is scanned using dark field or light field scans or electronics
Scanning mode is scanned target wafer, when capturing defect, obtains the coordinate position data of defect.
A further improvement is that the defect data analysis system, can be obtained in real time from wafer-scanning board scanning to
Wafer defect data, the defective data of generation is analyzed and determined in real time, and can be by the result Real-time Feedback of analytical judgment
To wafer defect scanning machine, handled for wafer defect scanning machine is further.
A further improvement is that the optical image acquisition system, it can be right under the control of wafer defect scanning system
The acquisition of wafer defect progress real time optical image information；When wafer defect system issues photographing instruction, optical image acquisition
System takes pictures to the wafer in current detection, and image data is sent to wafer defect scanning machine.
A further improvement is that the optical image acquisition system, is optical microscopy or high resolution camera, can incite somebody to action
Defect carries out Image Acquisition and by the image transmitting to wafer defect scanning machine.
To solve the above problems, the present invention provides a kind of acquisition method of real-time acquisition system of wafer defect optical photograph,
The real-time acquisition system of wafer defect optical photograph includes wafer defect scanning machine, defect data analysis system and light
Learn image capturing system；
The wafer defect scanning machine, can be scanned wafer defect；
The defect data analysis system can be carried out Real Data Exchangs, wafer defect with wafer defect analysis system
Scanning system is scanned wafer, and the scan data of formation can be sent to defect data analysis system in real time；
The optical image acquisition system, can receive the control instruction of wafer defect scanning machine, and with wafer curve
Data exchange is carried out between scanning machine；
The wafer defect scanning machine carries out Defect Scanning to wafer, and the data scanned are sent to defect in real time
Data analysis system, the defect data analysis system analyze scan data in real time, which is fed back to institute
State wafer defect scanning machine；
The wafer defect scanning machine can issue photographing instruction, optical image acquisition to the optical image acquisition system
After system receives photographing instruction, optical image acquisition is carried out to current wafer defect.
A further improvement is that the wafer defect scanning machine, is scanned using dark field or light field scans or electronics
Scanning mode is scanned target wafer, when capturing defect, obtains the coordinate position data of defect.
A further improvement is that the defect data analysis system, built-in defect standard database；Wafer defect is swept
The defective data that board is sent to defect data analysis system is retouched, defect data analysis system divides the defective data in real time
Analysis, is compared, the defective data beyond defect standard, in real time with the defect standard database built in defect data analysis system
Feed back to wafer-scanning board.
A further improvement is that when wafer defect scanning machine receives the current defect of defect data analysis system feedback
When the analysis result of data exceeds defect standard, wafer defect scanning machine issues the optical image acquisition system clap immediately
According to instruction, optical image acquisition system carries out Image Acquisition to current wafer defect.
A further improvement is that the optical image acquisition system carries out Image Acquisition to current wafer defect, then will
The image of acquisition sends back wafer defect scanning machine.
A further improvement is that the wafer defect scanning machine receives the image that optical image acquisition system is passed back
When, which analyzes and determines for engineer, adjusts accordingly technique to eliminate defect.
A further improvement is that the defect data analysis system, built in defect standard database by engineer
Editor's setting, forms the criterion of defect；And the criterion can be adjusted in real time by engineer according to manufacturer's standard
The present invention carries out analysis to scanning wafer result in real time and sentences using defects analysis system is embedded in Defect Scanning system
It is disconnected, and the controllable operating that scanning machine carries out optical photographing function is fed back to, reach the real-time optical collection of photos of abnormal product,
Conducive to the timely disposition of burning issue.
Detailed description of the invention
Fig. 1 is the real-time acquisition system schematic diagram of wafer defect optical photograph of the present invention.
Fig. 2 is the signal in the real-time acquisition system of wafer defect optical photograph of the present invention to determining defects starting Image Acquisition
Figure.
Fig. 3 is the schematic diagram for carrying out defect optical image acquisition in the embodiment of the present invention to wafer, is collected in real time in figure
The photo of wafer defect.
Fig. 4 is the structural block diagram of the real-time acquisition system of wafer defect optical photograph of the present invention.
Specific embodiment
A kind of real-time acquisition system of wafer defect optical photograph of the present invention is as shown in Figure 1, the system is wafer
Defect Scanning board generates wafer various scarce in a manufacturing process for scanning target wafer (wafer) to capture defect
It is trapped into row Scanning Detction.In the specific embodiment of the invention, dark field scanning is can be used in wafer defect scanning system or light field is swept
It retouches or the modes such as electron scanning is scanned target wafer, when capturing defect, obtain the coordinate position of defect.The skill
Art belongs to techniques known, and the present invention is not related to the improvement to this technology, therefore repeats no more.
Defective data analysis system is comprised in addition, the defect data analysis system is embedded into the wafer defect and sweeps
Board is retouched, Real Data Exchangs can be carried out with wafer defect scanning system.
Optical image acquisition system, the optical image acquisition system is controlled by wafer defect system, in current detection
Wafer carry out optical image information acquisition.The optical image acquisition system can be a kind of optical microscopy or its
The equipment that his high-resolution camera etc. can be carried out optical photograph acquisition carries out high-resolution photo to the defect of wafer and adopts
Collection, can send back wafer defect scanning machine for high-resolution, digital picture high-definition.
The defect data analysis system can obtain in real time the wafer defect data scanned from wafer-scanning board,
The defective data of generation is analyzed and determined in real time, and can be by the result Real-time Feedback of analytical judgment to wafer defect scanning machine
Platform is handled for wafer defect scanning machine is further.
The optical image acquisition system can carry out wafer defect real under the control of wafer defect scanning system
When optical image information acquisition；When wafer defect system issues photographing instruction, optical image acquisition system is to current detection
In wafer take pictures, and image data is sent to wafer defect scanning machine.
It is by wafer defect scanning machine using the acquisition method of the above-mentioned real-time acquisition system of wafer defect optical photograph
Platform, carries out Defect Scanning to current wafer first, and specific scanning mode is as previously described.Wafer defect scanning machine will scan
To wafer defect data be sent to defect data analysis system, the defect data analysis system to it is currently transmitted come lack
Data are fallen into be analyzed in real time.The defect data analysis system is built-in with a database, built-in a large amount of defect standard data, i.e.,
Built-in defective identification standard, the identification standard have engineer to edit setting previously according to specific requirement, defect can be recognized
The quasi- progress flexible calibration of calibration, it is tight or loose.
Defect data analysis system is compared the defective data defect standard database internal with it in real time, this is lacked
It falls into and is matched, compared with the defects of database type, distinguish and whether exceed Flaw evaluation standard, for recognizing without departing from defect
Calibration standard, it is believed that the defect is the scope allowed, is judged to passing through；But when comparison result is above identification standard, than
As shown in Fig. 2, being that wafer defect scanning machine carries out Defect Scanning, defect standard number in the embodiment to a collection of wafer sample
According to the identification standard in library for defect be using the defect counts on wafer as judgment basis, when on wafer (product 1~5) lack
When falling into quantity lower than certain value, when being determined as OK, and exceeding certain value, determine that wafer is the sample for needing to be further processed analysis
Product.In figure, wafer product 1~5 is scanned, scan data is sent to defect data analysis system, the defective data point
Analysis system carries out real-time defect data analysis comparison, as product 1, product 2, product 4, product 5 are not up to Flaw evaluation mark
Standard is judged to passing through；And the defects count of product 3 has exceeded identification standard, it is believed that be unqualified wafer, or need
This information is sent back wafer defect scanning machine by the wafer being further analyzed to identify, therefore, defect data analysis system.
After wafer defect scanning machine receives product 3 that defect data analysis system is sent back to beyond the information of standard, stand
Photographing instruction is sent to optical image acquisition system, optical image acquisition system starts the movement of taking pictures to product 3 immediately, adopts
The photo for collecting product 3, as shown in figure 3, the photo is returned to wafer defect scanning machine.The photo divides for engineer
Analysis judgement adjusts related process in time and eliminates defect, can effectively subtract to carry out analysis lookup to the exceeded reason of the product defect
Few product influences quantity, conducive to the timely disposition of burning issue.
The above is only a preferred embodiment of the present invention, is not intended to limit the present invention.Come for those skilled in the art
It says, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any modification, equivalent
Replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (13)
1. a kind of real-time acquisition system of wafer defect optical photograph, it is characterised in that: the system is wafer defect scanning machine,
For being scanned detection to the various defects that wafer generates in a manufacturing process；
Defect data analysis system, the defect data analysis system are embedded into the wafer defect scanning machine, energy and wafer
Defect Scanning system carries out Real Data Exchangs；
Optical image acquisition system, the optical image acquisition system are controlled by wafer defect system, to the crystalline substance in current detection
Circle carries out the acquisition of optical image information.
2. the real-time acquisition system of wafer defect optical photograph as described in claim 1, it is characterised in that: the wafer defect
Scanning machine, is scanned using dark field or light field scans or electron scanning mode is scanned target wafer, scarce when capturing
When falling into, the coordinate position data of defect is obtained.
3. the real-time acquisition system of wafer defect optical photograph as described in claim 1, it is characterised in that: the defective data
Analysis system can obtain in real time the wafer defect data scanned from wafer-scanning board, carry out to the defective data of generation real
When analyze and determine, and can be by the result Real-time Feedback of analytical judgment to wafer defect scanning machine, for wafer defect scanning machine
It is further to be handled.
4. the real-time acquisition system of wafer defect optical photograph as described in claim 1, it is characterised in that: the optical imagery
Acquisition system can carry out the acquisition of real time optical image information to wafer defect under the control of wafer defect scanning system；When
When wafer defect system issues photographing instruction, optical image acquisition system takes pictures to the wafer in current detection, and will figure
As data are sent to wafer defect scanning machine.
5. the real-time acquisition system of wafer defect optical photograph as described in claim 1, it is characterised in that: the optical imagery is adopted
Collecting system is optical microscopy or high resolution camera, defect can be carried out to Image Acquisition and by the image transmitting to wafer
Defect Scanning board.
6. a kind of acquisition method of the real-time acquisition system of wafer defect optical photograph, it is characterised in that: the wafer defect light
Learning the real-time acquisition system of photo includes wafer defect scanning machine, defect data analysis system and optical image acquisition system；
The wafer defect scanning machine, can be scanned wafer defect；
The defect data analysis system can be carried out Real Data Exchangs, wafer defect scanning with wafer defect analysis system
System is scanned wafer, and the scan data of formation can be sent to defect data analysis system in real time；
The optical image acquisition system, can receive the control instruction of wafer defect scanning machine, and with wafer curved scanning
Data exchange is carried out between board；
The wafer defect scanning machine carries out Defect Scanning to wafer, and the data scanned are sent to defective data in real time
Analysis system, the defect data analysis system analyze scan data in real time, which is fed back to the crystalline substance
Discount vibram outlet falls into scanning machine；
The wafer defect scanning machine can issue photographing instruction, optical image acquisition system to the optical image acquisition system
After receiving photographing instruction, optical image acquisition is carried out to current wafer defect.
7. the acquisition method of the real-time acquisition system of wafer defect optical photograph as claimed in claim 6, it is characterised in that: described
Wafer defect scanning machine, scanned using dark field or light field scanning or electron scanning mode target wafer is scanned,
When capturing defect, the coordinate position data of defect is obtained.
8. the acquisition method of the real-time acquisition system of wafer defect optical photograph as claimed in claim 6, it is characterised in that: described
Defect data analysis system, built-in defect standard database；Wafer defect scanning machine is sent to defect data analysis system
The defective data of system, defect data analysis system analyze the defective data in real time, built in defect data analysis system
Defect standard database be compared, the defective data beyond defect standard, Real-time Feedback gives wafer-scanning board.
9. the acquisition method of the real-time acquisition system of wafer defect optical photograph as described in claim 6 or 8, it is characterised in that:
When wafer defect scanning machine receives the analysis result of the current defect data of defect data analysis system feedback beyond defect
When standard, wafer defect scanning machine issues photographing instruction, optical image acquisition system to the optical image acquisition system immediately
System carries out Image Acquisition to current wafer defect.
10. the acquisition method of the real-time acquisition system of wafer defect optical photograph as claimed in claim 9, it is characterised in that: institute
It states optical image acquisition system and Image Acquisition is carried out to current wafer defect, the image of acquisition is then sent back into wafer defect and is swept
Retouch board.
11. the acquisition method of the real-time acquisition system of wafer defect optical photograph as claimed in claim 10, it is characterised in that: institute
When stating wafer defect scanning machine and receiving the image that optical image acquisition system is passed back, which carries out analysis for engineer and sentences
It is disconnected, technique is adjusted accordingly to eliminate defect.
12. the acquisition method of the real-time acquisition system of wafer defect optical photograph as claimed in claim 6, it is characterised in that: institute
Optical image acquisition system is stated, is optical microscopy or high resolution camera, defect can be carried out to Image Acquisition and by the figure
As being transferred to wafer defect scanning machine.
13. the acquisition method of the real-time acquisition system of wafer defect optical photograph as claimed in claim 8, it is characterised in that: institute
The defect data analysis system stated, built in defect standard database setting is edited by engineer, form the judgement mark of defect
It is quasi-；And the criterion can be adjusted in real time by engineer according to manufacturer's standard.
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| CN201811607199.9A CN109698139A (en) | 2018-12-27 | 2018-12-27 | The real-time acquisition system of wafer defect optical photograph and acquisition method |
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| CN201811607199.9A CN109698139A (en) | 2018-12-27 | 2018-12-27 | The real-time acquisition system of wafer defect optical photograph and acquisition method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111257327A (en) * | 2020-02-17 | 2020-06-09 | 上海华力集成电路制造有限公司 | Pattern defect detection method and detection system |
| CN112666311A (en) * | 2020-12-08 | 2021-04-16 | 上海华力集成电路制造有限公司 | Automatic monitoring system and method for defect scanning machine |
| CN114235840A (en) * | 2021-12-29 | 2022-03-25 | 复旦大学 | Wafer surface defect detection method based on light-section microscope |
| WO2022134673A1 (en) * | 2020-12-22 | 2022-06-30 | 长鑫存储技术有限公司 | Lattice defect visualization method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010036306A1 (en) * | 2000-03-08 | 2001-11-01 | Joachim Wienecke | Method for evaluating pattern defects on a wafer surface |
| TW484197B (en) * | 1999-07-21 | 2002-04-21 | Applied Materials Inc | Real time defect source identification |
| KR20070048379A (en) * | 2005-11-04 | 2007-05-09 | 삼성전자주식회사 | Wafer defect analysis system |
| CN103606529A (en) * | 2013-10-23 | 2014-02-26 | 上海华力微电子有限公司 | Method and device for improving defect classification accuracy |
-
2018
- 2018-12-27 CN CN201811607199.9A patent/CN109698139A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW484197B (en) * | 1999-07-21 | 2002-04-21 | Applied Materials Inc | Real time defect source identification |
| US20010036306A1 (en) * | 2000-03-08 | 2001-11-01 | Joachim Wienecke | Method for evaluating pattern defects on a wafer surface |
| KR20070048379A (en) * | 2005-11-04 | 2007-05-09 | 삼성전자주식회사 | Wafer defect analysis system |
| CN103606529A (en) * | 2013-10-23 | 2014-02-26 | 上海华力微电子有限公司 | Method and device for improving defect classification accuracy |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111257327A (en) * | 2020-02-17 | 2020-06-09 | 上海华力集成电路制造有限公司 | Pattern defect detection method and detection system |
| CN112666311A (en) * | 2020-12-08 | 2021-04-16 | 上海华力集成电路制造有限公司 | Automatic monitoring system and method for defect scanning machine |
| WO2022134673A1 (en) * | 2020-12-22 | 2022-06-30 | 长鑫存储技术有限公司 | Lattice defect visualization method |
| CN114235840A (en) * | 2021-12-29 | 2022-03-25 | 复旦大学 | Wafer surface defect detection method based on light-section microscope |
| CN114235840B (en) * | 2021-12-29 | 2024-03-08 | 复旦大学 | Wafer surface defect detection method based on light cutting microscope |
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