CN109680338A - A kind of polysilicon one texture-etching side method - Google Patents
A kind of polysilicon one texture-etching side method Download PDFInfo
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- CN109680338A CN109680338A CN201811604813.6A CN201811604813A CN109680338A CN 109680338 A CN109680338 A CN 109680338A CN 201811604813 A CN201811604813 A CN 201811604813A CN 109680338 A CN109680338 A CN 109680338A
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- wool
- making herbs
- silicon wafer
- texture
- polysilicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Organic Chemistry (AREA)
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Abstract
The invention discloses a kind of polysilicon one texture-etching side methods, comprising: step 1, to the non-making herbs into wool face spin coating photoresist layer of silicon wafer as mask layer；Step 2, the silicon wafer is placed in H2O2, HF and AgNO3Making herbs into wool solution body in making herbs into wool；Step 3, the mask layer is removed to the silicon wafer after making herbs into wool；Step 4, the silicon wafer after the removal mask layer is cleaned with cleaning solution.Then silicon wafer is placed in H as mask layer by the photoresist layer not reacted with making herbs into wool solution by elder generation in the non-making herbs into wool face spin coating of silicon wafer2O2, HF and AgNO3Making herbs into wool solution body in making herbs into wool, since non-making herbs into wool face has photoresist layer as mask layer, the non-making herbs into wool face of silicon wafer is kept apart with making herbs into wool solution and is not reacted, only making herbs into wool face reacts with making herbs into wool solution due to not blocking and completes making herbs into wool, to realize the one texture-etching side of silicon wafer, reduce unnecessary silicon wafer loss and the loss of making herbs into wool chemicals, simple process, making herbs into wool are high-efficient, at low cost.
Description
Technical field
The present invention relates to photovoltaic module manufacturing technology fields, more particularly to a kind of polysilicon one texture-etching side method.
Background technique
Since photovoltaic power generation has the characteristics that pollution is small almost without geographical restrictions, and solar energy is that sustainable energy is several
It is innumerable, it will not be to occurring environmental problems and the moneys such as sublimity pollution and greenhouse effects as traditional volume fossil energy
The problem of source exhaustion, so that the cost of photovoltaic power generation obtains large-scale development while reducing.
During photovoltaic power generation, electric energy is mainly converted the solar by photovoltaic cell, improves solar battery
Transfer efficiency reduces the primary goal that manufacturing cost is always domestic and international crystal silicon solar energy battery research and development, single side system
Suede reduces silicon wafer loss and chemical cost with it, becomes a development trend of silicon wafer wool making.
It is the single side surface deposition layer of sin in monocrystalline silicon piece during monocrystalline alkali making herbs into woolxOyFilm, in preceding deposition
SiNxOyAlkali making herbs into wool is carried out on the monocrystalline silicon piece of film, due to having aforementioned SiN in the single side surface of the monocrystalline silicon piecexOyThe masking of film,
Therefore the one texture-etching side of the monocrystalline silicon piece is realized.
Double-side cell needs two sides making herbs into wool, and conventional polycrystalline battery only needs one side making herbs into wool, forms light trapping structure and collects the sun
Light.For including HF solution, HF meeting and SiN in polysilicon making herbs into wool systemxOyReaction destroys mask structure, thus cannot use
SiNxOyExposure mask as polysilicon chip.
Chain type machine using " moisture film method " realize one texture-etching side, existing groove type etching machine be by by two panels silicon wafer with " back
The form of backrest " is inserted in inside the gaily decorated basket, realizes one texture-etching side by lamination, but it is residual to have water between two panels silicon wafer after making herbs into wool
It stays, two panels silicon wafer is separated, then pass through cleaning treatment, this method working efficiency is lower.
Summary of the invention
The object of the present invention is to provide a kind of polysilicon one texture-etching side methods, reduce unnecessary silicon wafer loss and making herbs into wool
The loss of liquid chemicals, reduces making herbs into wool cost.
In order to solve the above technical problems, the embodiment of the invention provides a kind of polysilicon one texture-etching side methods, comprising:
Step 1, to the non-making herbs into wool face spin coating photoresist layer of silicon wafer as mask layer；
Step 2, the silicon wafer is placed in H2O2, HF and AgNO3Making herbs into wool solution body in making herbs into wool；
Step 3, the mask layer is removed to the silicon wafer after making herbs into wool；
Step 4, the silicon wafer after the removal mask layer is cleaned with cleaning solution.
Wherein, the photoresist layer with a thickness of 300nm~500nm.
Wherein, the step 3 includes:
It is 5%~10% hydrogen peroxide, 10%~15% hydroxide that the silicon wafer after making herbs into wool, which is placed in volume fraction,
Potassium and 2%~5% ammonia water mixture in, remove the mask layer in the non-making herbs into wool face of the silicon wafer.
Wherein, the step 4, comprising:
The silicon wafer is placed in the hydrogen peroxide that volume fraction is 10%~15% and the salt that volume fraction is 10%~15%
First wash is carried out in sour mixed liquor；
The silicon wafer is subjected to described remove and uses the hydrofluoric acid and volume fraction that volume fraction is 10%~15% after this is cleaned
To be cleaned again in 10%~15% hydrochloric acid mixed solution；
Remove the droplet of the silicon chip surface.
Wherein, between the step 1 and the step 2, further includes:
The silicon wafer that the mask layer is arranged to non-making herbs into wool face is cleaned using RCA standard cleaning liquid.
Wherein, the step 2 further include:
To the ultrasonic wave for passing to 170Khz~400Khz during the silicon wafer wool making.
Wherein, the step 2 further include:
Silicon wafer during making herbs into wool is placed in 10min~45min in the environment that magnetic induction intensity is 5T~10T.
Polysilicon one texture-etching side method provided by the embodiment of the present invention has the advantage that compared with prior art
Polysilicon one texture-etching side method provided in an embodiment of the present invention, by elder generation silicon wafer non-making herbs into wool face spin coating not with system
Then silicon wafer is placed in H as mask layer by the photoresist layer that suede solution reacts2O2, HF and AgNO3Making herbs into wool solution body in
The non-making herbs into wool face of silicon wafer is kept apart with making herbs into wool solution and is not occurred since non-making herbs into wool face has photoresist layer as mask layer by making herbs into wool
Reaction, only making herbs into wool face reacts with making herbs into wool solution due to not blocking and completes making herbs into wool, to realize the single side of silicon wafer
Making herbs into wool, reduces unnecessary silicon wafer loss and the loss of making herbs into wool chemicals, simple process, making herbs into wool are high-efficient, at low cost.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is a kind of step process of specific embodiment of polysilicon one texture-etching side method provided in an embodiment of the present invention
Schematic diagram.
Specific embodiment
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Detail is elaborated in the following description to fully understand the present invention.But the present invention can with it is a variety of not
Other way described herein is same as to implement, those skilled in the art can do class without violating the connotation of the present invention
Like popularization.Therefore the present invention is not limited to the specific embodiments disclosed below.
Referring to FIG. 1, Fig. 1 is a kind of specific embodiment of polysilicon one texture-etching side method provided in an embodiment of the present invention
Step flow diagram.
In a specific embodiment, the polysilicon one texture-etching side method, comprising:
Step 1, to the non-making herbs into wool face spin coating photoresist layer of silicon wafer as mask layer；
Step 2, the silicon wafer is placed in H2O2, HF and AgNO3Making herbs into wool solution body in making herbs into wool；
Step 3, the mask layer is removed to the silicon wafer after making herbs into wool；
Step 4, the silicon wafer after the removal mask layer is cleaned with cleaning solution.
The photoresist layer not reacted with making herbs into wool solution by elder generation in the non-making herbs into wool face spin coating of silicon wafer is as mask layer, so
Silicon wafer is placed in H afterwards2O2, HF and AgNO3Making herbs into wool solution body in making herbs into wool, since there is photoresist layer in non-making herbs into wool face as mask layer,
The non-making herbs into wool face of silicon wafer is kept apart with making herbs into wool solution and is not reacted, only making herbs into wool face due to do not block and with making herbs into wool solution
It reacts and completes making herbs into wool, to realize the one texture-etching side of silicon wafer, reduce unnecessary silicon wafer loss and making herbs into wool chemistry
The loss of drug, simple process, making herbs into wool are high-efficient, at low cost.
In the present invention for the thickness of the photoresist layer of silicon wafer and photoresist type without limitation, effect be in silicon
During the making herbs into wool face of piece carries out making herbs into wool, non-making herbs into wool face is protected to occur that it with making herbs into wool solution, the general photoetching
Glue-line with a thickness of 300nm~500nm.
It is different from existing alkali process for etching that one texture-etching side is carried out to silicon wafer in the present invention, but uses H2O2, HF and
AgNO3Making herbs into wool solution body making herbs into wool, due to use weak acid making herbs into wool, possible making herbs into wool speed is slower, the present invention to its making herbs into wool time with
And the ratio of various components is not specifically limited.
And after making herbs into wool, the photoresist layer unless mask layer in making herbs into wool face is needed, for removing exposure mask in the present invention
The solution type of layer, component are not specifically limited, and the general step 3 includes:
It is 5%~10% hydrogen peroxide, 10%~15% hydroxide that the silicon wafer after making herbs into wool, which is placed in volume fraction,
Potassium and 2%~5% ammonia water mixture in, remove the mask layer in the non-making herbs into wool face of the silicon wafer.
It include but is not limited to the type and ratio of the solution of above-mentioned removal mask layer in the present invention, for removing exposure mask
The time of layer is not especially limited.
In one embodiment, remove photoresist layer solution be volume fraction be 5% hydrogen peroxide, 10% hydroxide
Potassium and 2% ammonia water mixture.
Since by making herbs into wool and after removing the process of photoresist layer, silicon chip surface has many residual impurities, so that
Silicon wafer cannot be used directly, the step 4, comprising:
The silicon wafer is placed in the hydrogen peroxide that volume fraction is 10%~15% and the salt that volume fraction is 10%~15%
First wash is carried out in sour mixed liquor；
The silicon wafer is subjected to described remove and uses the hydrofluoric acid and volume fraction that volume fraction is 10%~15% after this is cleaned
To be cleaned again in 10%~15% hydrochloric acid mixed solution；
Remove the droplet of the silicon chip surface.
In one embodiment, to the cleaning after the photoresist layer of removal silicon wafer, comprising: the silicon wafer is placed in volume
First wash is carried out in the hydrochloric acid mixed solution that the hydrogen peroxide and volume fraction that score is 10% are 10%；The silicon wafer is subjected to institute
It states and is carried out again clearly in the hydrochloric acid mixed solution for being 10% except the hydrofluoric acid and volume fraction for being 10% with volume fraction after this cleaning
It washes, finally dries.
It should be pointed out that removing water in the present invention for silicon wafer after last cleaning is complete except through drying
, can also be by the way of drying except pearl, or other modes remove droplet, the present invention is not especially limited this.
It is by using the non-making herbs into wool face spin coating photoresist layer of silicon wafer as mask layer and then progress making herbs into wool in the present invention
Operation.Since during spin coating photoresist layer, the making herbs into wool face of silicon wafer is not protected, it is most likely that it is attached to make making herbs into wool face
Impurity so that impurity has an impact to making herbs into wool process during the making herbs into wool of step 2, or causes the decline of making herbs into wool quality,
Therefore, in order to improve making herbs into wool efficiency and making herbs into wool quality, between the step 1 and the step 2, further includes:
The silicon wafer that the mask layer is arranged to non-making herbs into wool face is cleaned using RCA standard cleaning liquid.
In the present invention other than using RCA standard cleaning liquid to clean silicon wafer, can also can be had using other
Effect goes deimpurity solution to be cleaned, and the present invention is not specifically limited cleaning process and cleaning solution.
Making herbs into wool employed in the present invention predominantly carries out one texture-etching side in groove type etching machine, passes through the making herbs into wool in silicon wafer
Face forms the light trapping structure of Pyramid, and during making herbs into wool, making herbs into wool solution can react with silicon chip surface, to silicon wafer
Surface carries out corrosion and forms light trapping structure, and would generally form bubble on the surface of silicon wafer in the process, and bubble can obstruct
Woolen-making liquid reacts with silicon wafer, reduces making herbs into wool efficiency.Therefore, in order to solve this problem, making herbs into wool efficiency is improved, in the present invention
One embodiment in, the step 2 further include:
To the ultrasonic wave for passing to 170Khz~400Khz during the silicon wafer wool making.
It, can be quick such as the ultrasonic wave of 170Khz~400Khz by during making herbs into wool, passing to certain frequency to silicon wafer
The bubble of silicon chip surface eliminate, and the surface of silicon wafer is not damaged, to improve making herbs into wool efficiency and making herbs into wool quality.
It should be pointed out that being not specifically limited in the present invention for the power of ultrasonic wave and frequency.
In order to further increase making herbs into wool quality, the step 2 further include:
Silicon wafer during making herbs into wool is placed in 10min~45min in the environment that magnetic induction intensity is 5T~10T.
By the way that during making herbs into wool, Woolen-making liquid and silicon wafer are placed in scheduled magnetic field, can be grown in silicon chip surface
The making herbs into wool face of dense uniform, thus the too high making herbs into wool quality of value, for the solar battery of subsequent high-quality manufacture establish it is higher
Basis.
It should be pointed out that magnetic field and specific is arranged in the making herbs into wool environment of silicon wafer for how to realize in the present invention
Magnetic field strength is not specifically limited, and can be using general magnet, can also use electromagnet, or in other manners
This is not limited by the present invention.
In conclusion polysilicon one texture-etching side method provided in an embodiment of the present invention, by elder generation in the non-making herbs into wool face of silicon wafer
Then silicon wafer is placed in H as mask layer by the photoresist layer that spin coating does not react with making herbs into wool solution2O2, HF and AgNO3System
Making herbs into wool in suede solution body, since there is photoresist layer in non-making herbs into wool face as mask layer, by the non-making herbs into wool face of silicon wafer and making herbs into wool solution every
It leaves and does not react, only making herbs into wool face reacts with making herbs into wool solution due to not blocking and completes making herbs into wool, to realize
The one texture-etching side of silicon wafer reduces unnecessary silicon wafer loss and the loss of making herbs into wool chemicals, simple process, making herbs into wool efficiency
It is high, at low cost.
Polysilicon one texture-etching side method provided by the present invention is described in detail above.It is used herein specifically
Principle and implementation of the present invention are described for a example, the present invention that the above embodiments are only used to help understand
Method and its core concept.It should be pointed out that for those skilled in the art, not departing from original of the invention
, can be with several improvements and modifications are made to the present invention under the premise of reason, these improvement and modification also fall into right of the present invention and want
In the protection scope asked.
Claims (7)
1. a kind of polysilicon one texture-etching side method characterized by comprising
Step 1, to the non-making herbs into wool face spin coating photoresist layer of silicon wafer as mask layer；
Step 2, the silicon wafer is placed in H2O2, HF and AgNO3Making herbs into wool solution body in making herbs into wool；
Step 3, the mask layer is removed to the silicon wafer after making herbs into wool；
Step 4, the silicon wafer after the removal mask layer is cleaned with cleaning solution.
2. polysilicon one texture-etching side method as described in claim 1, which is characterized in that the photoresist layer with a thickness of 300nm
~500nm.
3. polysilicon one texture-etching side method as claimed in claim 1 or 2, which is characterized in that the step 3 includes:
By the silicon wafer after making herbs into wool be placed in volume fraction be 5%~10% hydrogen peroxide, 10%~15% potassium hydroxide and
In 2%~5% ammonia water mixture, the mask layer in the non-making herbs into wool face of the silicon wafer is removed.
4. polysilicon one texture-etching side method as claimed in claim 3, which is characterized in that the step 4, comprising:
The silicon wafer is placed in the hydrogen peroxide that volume fraction is 10%~15% and the salt acid-mixed that volume fraction is 10%~15%
It closes in liquid and carries out first wash；
The silicon wafer is carried out described except the hydrofluoric acid and volume fraction that are 10%~15% with volume fraction after this cleaning are
It is cleaned again in 10%~15% hydrochloric acid mixed solution；
Remove the droplet of the silicon chip surface.
5. polysilicon one texture-etching side method as claimed in claim 4, which is characterized in that the step 1 and the step 2 it
Between, further includes:
The silicon wafer that the mask layer is arranged to non-making herbs into wool face is cleaned using RCA standard cleaning liquid.
6. polysilicon one texture-etching side method as described in claim 1, which is characterized in that the step 2 further include:
To the ultrasonic wave for passing to 170Khz~400Khz during the silicon wafer wool making.
7. polysilicon one texture-etching side method as described in claim 1, which is characterized in that the step 2 further include:
Silicon wafer during making herbs into wool is placed in 10min~45min in the environment that magnetic induction intensity is 5T~10T.
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| CN201811604813.6A CN109680338A (en) | 2018-12-26 | 2018-12-26 | A kind of polysilicon one texture-etching side method |
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| CN201811604813.6A CN109680338A (en) | 2018-12-26 | 2018-12-26 | A kind of polysilicon one texture-etching side method |
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Citations (4)
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|---|---|---|---|---|
| US20120267627A1 (en) * | 2011-04-21 | 2012-10-25 | Rohm And Haas Electronic Materials Llc | Polycrystalline texturing composition and method |
| CN105576080A (en) * | 2016-01-29 | 2016-05-11 | 江西赛维Ldk太阳能高科技有限公司 | Single-surface texturing method for diamond wire cut polycrystalline silicon wafer, and diamond wire cut polycrystalline silicon wafer with single surface textured |
| CN106328769A (en) * | 2016-10-17 | 2017-01-11 | 浙江晶科能源有限公司 | Method for processing mono-crystalline silicon piece surface |
| CN108417669A (en) * | 2018-03-22 | 2018-08-17 | 西安交通大学 | A kind of etching method for Buddha's warrior attendant wire cutting polysilicon chip solar cell |
-
2018
- 2018-12-26 CN CN201811604813.6A patent/CN109680338A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120267627A1 (en) * | 2011-04-21 | 2012-10-25 | Rohm And Haas Electronic Materials Llc | Polycrystalline texturing composition and method |
| CN105576080A (en) * | 2016-01-29 | 2016-05-11 | 江西赛维Ldk太阳能高科技有限公司 | Single-surface texturing method for diamond wire cut polycrystalline silicon wafer, and diamond wire cut polycrystalline silicon wafer with single surface textured |
| CN106328769A (en) * | 2016-10-17 | 2017-01-11 | 浙江晶科能源有限公司 | Method for processing mono-crystalline silicon piece surface |
| CN108417669A (en) * | 2018-03-22 | 2018-08-17 | 西安交通大学 | A kind of etching method for Buddha's warrior attendant wire cutting polysilicon chip solar cell |
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Application publication date: 20190426 |