CN109671667A - A kind of forming method of three-dimensional storage and its channel pore structure - Google Patents

A kind of forming method of three-dimensional storage and its channel pore structure Download PDF

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Publication number
CN109671667A
CN109671667A CN201811524018.6A CN201811524018A CN109671667A CN 109671667 A CN109671667 A CN 109671667A CN 201811524018 A CN201811524018 A CN 201811524018A CN 109671667 A CN109671667 A CN 109671667A
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layer
hole
channel
substrate
insulation connecting
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CN109671667B (en
Inventor
吕震宇
施文广
吴关平
潘锋
万先进
陈保友
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Yangtze Memory Technologies Co Ltd
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Yangtze Memory Technologies Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels

Abstract

The embodiment of the invention discloses a kind of three-dimensional storage and its forming methods of channel pore structure, by first through hole and the second through-hole twice through-hole formation process come the channel pore structure that is formed in the three-dimensional storage, greatly reduce the technology difficulty and cost of the channel pore structure, it solves under identical bore, the big and at high cost problem of technology difficulty caused by through-hole depth-to-width ratio is excessive, while also reducing the manufacture craft difficulty and cost of the three-dimensional storage.

Description

A kind of forming method of three-dimensional storage and its channel pore structure
This case is based on application No. is 201710134782.1 divisional applications
Technical field
The present invention relates to three-dimensional storage technical field more particularly to the shapes of a kind of three-dimensional storage and its channel pore structure At method.
Background technique
As the stacking number of ON (Oxide/Nitride) in three-dimensional storage (such as 3D NAND) is more and more, so that The depth of the access opening formed in three-dimensional storage is increasing, and when forming access opening using single etching technics, identical In the case where aperture, the depth of access opening is bigger, and etching difficulty is bigger.Especially, when the layer number in three-dimensional storage reaches When 120 or more, then when forming the access opening for running through each lamination using the method that singly etches, there are etch periods to be exponentially increased The phenomenon that, process efficiency is lower, higher cost.
Summary of the invention
In order to solve the above technical problems, the embodiment of the invention provides a kind of three-dimensional storage and its shapes of channel pore structure At method, to reduce the technology difficulty and cost of channel pore structure in three-dimensional storage.
To solve the above problems, the embodiment of the invention provides following technical solutions:
The forming method of channel pore structure in a kind of three-dimensional storage, this method comprises: providing substrate, the substrate surface It is formed with the first stack layer and the first insulation connecting layer, first stack layer is by multiple oxide layers being staggeredly superimposed and nitration case It constitutes；It is formed completely through first stack layer and first insulation connecting layer, and extended in the substrate surface First through hole；First passage structure is formed in the substrate surface that first through hole exposes to the open air；It is formed in the first through hole side wall First functional layer；Second channel structure and are sequentially formed in the first functional layer side wall and the first passage body structure surface The surface of one interstitital texture, the second channel structure and first interstitital texture is lower than the first insulation connecting layer table Face；The first groove is formed in first insulation connecting layer, the projection of first groove on the substrate is completely covered The projection of the first through hole on the substrate；Third channel structure, the third channel are formed in first groove Structure is in contact with the second channel structure, and the third channel structure is prominent along the radially outward direction of the first through hole For first functional layer；The second stack layer and second are sequentially formed away from the substrate side in the third channel structure Insulation connecting layer, second stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；It is formed completely through described Second stack layer and second insulation connecting layer, and the second through-hole in the third channel body structure surface is extended to, it is described The projection of second through-hole on the substrate and the projection of the first through hole on the substrate are at least partly overlapping；Described Second through-hole side wall forms the second functional layer；It is sequentially formed in the second functional layer side wall and second via bottoms surface Fourth lane structure and the second interstitital texture, the surface of second interstitital texture are lower than the surface of the fourth lane structure； Form Five-channel structure in the second groove that the fourth lane structure and second interstitital texture are formed, the described 5th Channel design is in contact with the fourth lane structure.
Optionally, forming the first functional layer in the first through hole side wall includes: side wall and the institute in the first through hole The surface for stating first passage structure forms the first tunnel layer, for generating charge；First is formed in the first tunnelling layer surface Accumulation layer, for storing charge；The first barrier layer is formed in the first storage layer surface, for stopping first accumulation layer In charge outflow；The first protective layer is formed in first barrier layer surface, for protecting first barrier layer subsequent It is damaged in removal technique；Remove first protective layer, the first barrier layer, first accumulation layer and first tunnelling Layer is located at the part of the first passage body structure surface, forms the first functional layer.
Optionally, second channel structure is sequentially formed in the first functional layer side wall and the first passage body structure surface With the first interstitital texture, the surface of the second channel structure and first interstitital texture is lower than first insulation connecting layer Surface includes: to form covering the first protective layer side wall, the first passage structure and the first insulation connecting layer surface the Two channel layers；Form the first filled layer for covering the second channel layer；Part first filled layer is removed, so that described the One filling layer surface is lower than first insulation connecting layer surface, forms the first interstitital texture；Remove the part second channel Layer forms second channel structure so that the second channel layer surface is lower than first insulation connecting layer.
Optionally, this method further include: form the first mask layer on first insulation connecting layer surface.
Optionally, the first groove is formed in first insulation connecting layer, first groove is on the substrate It includes: removal first mask layer that the projection of the first through hole on the substrate, which is completely covered, in projection；Described in planarization First insulation connecting layer surface；Part first insulation connecting layer is removed, is formed and is run through in first insulation connecting layer First groove of first insulation connecting layer, it is logical that the projection of first groove on the substrate is completely covered described first The projection of hole on the substrate.
Optionally, fourth lane structure and are sequentially formed in the second functional layer side wall and second via bottoms The surface of two interstitital textures, the fourth lane structure and second interstitital texture is lower than second insulation connecting layer surface It include: to form the four-way for covering the second protective layer side wall, second via bottoms and the second insulation connecting layer surface Channel layer；Form the second filled layer for covering the fourth lane layer；Part second filled layer is removed, so that described second fills out Layer surface is filled lower than second insulation connecting layer surface, forms the second interstitital texture；It removes the fourth lane layer and is located at institute Two parts on the second insulation connecting layer surface are stated, fourth lane structure is formed, the surface of the fourth lane structure is higher than described The surface of second interstitital texture.
A kind of three-dimensional storage comprising: substrate, the substrate surface are formed with the first stack layer and the first insulation connection Layer, first stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；Through first stack layer and described First insulation connecting layer, and extend to the first through hole in the substrate surface；It is formed in the substrate that first through hole exposes to the open air The first passage structure on surface；It is formed in the first functional layer of the first through hole side wall；It is sequentially formed in first function The second channel structure and the first interstitital texture of layer side wall and the first passage body structure surface, the second channel structure and institute The surface of the first interstitital texture is stated lower than first insulation connecting layer surface；Be formed in first insulation connecting layer The projection of the first through hole on the substrate is completely covered in one groove, the projection of first groove on the substrate； The third channel structure being formed in first groove, the third channel structure are in contact with the second channel structure, The third channel structure protrudes from first functional layer along the radially outward direction of the first through hole；It is sequentially formed in The third channel structure deviate from the substrate side the second stack layer and the second insulation connecting layer, second stack layer by Multiple staggeredly oxide layers of superposition and nitration case are constituted；Through second stack layer and second insulation connecting layer, and prolong Extend to the second through-hole in the third channel body structure surface, the projection of second through-hole on the substrate and described first The projection of through-hole on the substrate is at least partly overlapping；It is formed in the second functional layer of second through-hole side wall；Successively shape The fourth lane structure and the second interstitital texture of second functional layer side wall and second via bottoms surface described in Cheng Yu, it is described The surface of fourth lane structure is higher than the surface of second interstitital texture；It is formed in the fourth lane structure and described second The Five-channel structure in the second groove that interstitital texture is formed, the Five-channel structure connect with the fourth lane structure Touching.
The forming method of channel pore structure in a kind of three-dimensional storage, the three-dimensional storage include arranging along word-line direction First area, second area and third region, wherein the first area is used to form channel pore structure, the third area Domain is used to form insulation ring structure, this method comprises: providing substrate, the substrate surface is formed with the first stack layer and first absolutely Edge articulamentum, first stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；In the first area, described Second area and the third region are formed completely through first stack layer and first insulation connecting layer, and are extended to First through hole in the substrate surface；First passage structure is formed in the substrate surface that first through hole exposes to the open air；Described First through hole side wall forms the first functional layer；It is sequentially formed in the first functional layer side wall and the first passage body structure surface The surface of second channel structure and the first interstitital texture, the second channel structure and first interstitital texture is lower than described the One insulation connecting layer surface；The first groove is formed in first insulation connecting layer, first groove is on the substrate Projection the projection of the first through hole on the substrate is completely covered；Third channel knot is formed in first groove Structure, the third channel structure are in contact with the second channel structure, and the third channel structure is along the first through hole Radially outward direction protrudes from first functional layer；It is sequentially formed in the third channel structure away from the substrate side Second stack layer and the second insulation connecting layer, second stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases； It is formed in the first area, the second area and the third region completely through second stack layer and described second Insulation connecting layer, and the second through-hole in the third channel body structure surface is extended to, second through-hole is on the substrate Projection and the projection of the first through hole on the substrate it is at least partly overlapping；Second is formed in second through-hole side wall Functional layer；In the first area, the corresponding second functional layer side wall and second via bottoms form fourth lane knot Structure, and the second filling knot is formed in the first area, corresponding second through-hole of the second area and the third region Structure, the surface of the fourth lane structure are higher than the surface of second interstitital texture；In the fourth lane structure and described Five-channel structure, the Five-channel structure and the fourth lane knot are formed in the second groove that second interstitital texture is formed Structure is in contact.
Optionally, the is formed in the corresponding second functional layer side wall in the first area and second via bottoms Four-way structure, and is formed in the first area, corresponding second through-hole of the second area and the third region Two interstitital textures, it includes: in firstth area that the surface of the fourth lane structure, which is higher than the surface of second interstitital texture, Domain, second area and the second area, which are formed, covers the second functional layer side wall, second via bottoms and described the The fourth lane layer on two insulation connecting layer surfaces；Covering institute is formed in the first area, second area and the second area The third filled layer of fourth lane layer is stated, there is the air gap in the third filled layer；Institute is corresponded in the third filled layer The surface for stating first area forms third mask layer；Using the third mask layer as exposure mask, removes the third filled layer and be located at The part of the second area and the third region；Remove the third mask layer；It is located at the third filled layer described The part of first area is exposure mask, and removal is located at the fourth lane layer of the second area and the third region；It is being located at institute The the second function layer surface for stating second area and the third region forms the 4th filled layer, the fillibility of the 4th filled layer The third filled layer can be better than；Removal is located at the third filled layer of the fourth lane layer surface of the first area；Described The second filled layer is formed in second through-hole of first area, second area and the third region；Removal part described second is filled out Layer is filled, so that the surface of second filled layer is lower than the surface of second insulation connecting layer, forms the second interstitital texture；Removal The fourth lane layer is located at the part on second insulation connecting layer surface, forms fourth lane structure, the fourth lane Body structure surface is higher than second interstitital texture surface.
Optionally, forming the first functional layer in the first through hole side wall includes: side wall and the institute in the first through hole The surface for stating first passage structure forms the first tunnel layer, for generating charge；First is formed in the first tunnelling layer surface Accumulation layer, for storing charge；The first barrier layer is formed in the first storage layer surface, for stopping first accumulation layer In charge outflow；The first protective layer is formed in first barrier layer surface, for protecting first barrier layer subsequent It is damaged in removal technique；Remove first protective layer, the first barrier layer, first accumulation layer and first tunnelling Layer is located at the part of the first passage body structure surface, forms the first functional layer.
Optionally, second channel structure is sequentially formed in the first functional layer side wall and the first passage body structure surface With the first interstitital texture, the surface of the second channel structure and first interstitital texture is lower than first insulation connecting layer Surface includes: to form covering the first protective layer side wall, the first passage structure and the first insulation connecting layer surface the Two channel layers；Form the first filled layer for covering the second channel layer；Part first filled layer is removed, so that described the One filling layer surface is lower than first insulation connecting layer surface, forms the first interstitital texture；Remove the part second channel Layer forms second channel structure so that the second channel layer surface is lower than first insulation connecting layer.
A kind of three-dimensional storage, the three-dimensional storage include along word-line direction arrangement first area, second area and Third region, wherein the first area is used to form channel pore structure, and the third region is used to form insulation ring structure, Along including: substrate perpendicular to the three-dimensional storage surface direction, the substrate surface is formed with the first stack layer and first absolutely Edge articulamentum, first stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；In the first area, described Second area and the third region, completely through first stack layer and first insulation connecting layer, and extend to institute State the first through hole in substrate surface；It is formed in the first passage structure for the substrate surface that first through hole exposes to the open air；It is formed in First functional layer of the first through hole side wall；It is sequentially formed at the first functional layer side wall and the first passage structure table The surface of the second channel structure and the first interstitital texture in face, the second channel structure and first interstitital texture is lower than institute State the first insulation connecting layer surface；The first groove being formed in first insulation connecting layer, first groove is described The projection of the first through hole on the substrate is completely covered in projection in substrate；The third being formed in first groove Channel design, the third channel structure are in contact with the second channel structure, and the third channel structure is along described first The radially outward direction of through-hole protrudes from first functional layer；The third channel structure is sequentially formed at away from the base The second stack layer and the second insulation connecting layer of bottom side, second stack layer is by multiple oxide layers and nitridation being staggeredly superimposed Layer is constituted；In the first area, the second area and the third region, completely through second stack layer and described Second insulation connecting layer, and the second through-hole in the third channel body structure surface is extended to, second through-hole is in the base Projection and the projection of the first through hole on the substrate on bottom is at least partly overlapping；It is formed in second through-hole side wall The second functional layer；It is formed in the of the corresponding second functional layer side wall in the first area and second via bottoms Four-way structure, and it is formed in the first area, in corresponding second through-hole of the second area and the third region The second interstitital texture, the surface of the fourth lane structure is higher than the surface of second interstitital texture；It is formed in described The Five-channel structure in the second groove that four-way structure and second interstitital texture are formed, the Five-channel structure with The fourth lane structure is in contact.
Compared with prior art, above-mentioned technical proposal has the advantage that
The forming method of the channel pore structure of three-dimensional storage provided by the embodiment of the present invention passes through first through hole and Through-hole formation process greatly reduces the access opening come the channel pore structure formed in the three-dimensional storage to two through-holes twice The technology difficulty and cost of structure, solve under identical bore, and technology difficulty caused by through-hole depth-to-width ratio is excessive is big and cost High problem, while also reducing the manufacture craft difficulty and cost of the three-dimensional storage.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with It obtains other drawings based on these drawings.
Fig. 1-Figure 21 is each step of through-hole structure forming method in three-dimensional storage provided by one embodiment of the invention Cross-sectional view；
Figure 22-Figure 46 is each step of through-hole structure forming method in three-dimensional storage provided by one embodiment of the invention Cross-sectional view.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
The embodiment of the invention provides a kind of forming methods of channel pore structure in three-dimensional storage, this method comprises:
S101: as shown in Figure 1, providing substrate 1,1 surface of substrate is formed with the first stack layer 2 and the first insulation connection Layer 3, first stack layer 2 are made of the multiple staggeredly oxide layer of superposition and nitration cases.Optionally, first stack layer 2 Middle oxide layer and the number of plies summation of nitration case are not less than 64, but the present invention is to this and without limitation, specifically depends on the circumstances.
Specifically, in one embodiment of the invention, first insulation connecting layer 3 is silicon oxide layer, but of the invention To this and without limitation, as long as guaranteeing the material of first insulation connecting layer 3 and nitration case described in first stack layer 2 Difference, and there is insulation function.
It should be noted that on the basis of the above embodiments, in one embodiment of the invention, this method is also wrapped It includes:
The first mask layer 4 is formed on 3 surface of the first insulation connecting layer, optionally, first mask layer 4 includes position Nitration case in 3 surface of the first insulation connecting layer and the oxide layer positioned at the nitridation layer surface.
S102: continuing as shown in Figure 1, formed completely through first stack layer 2 and first insulation connecting layer 3, And extend to the first through hole 5 in 1 surface of substrate.
Specifically, in one embodiment of the invention, being formed completely through first stack layer 2 and described first absolutely Edge articulamentum 3, and the first through hole 5 extended in 1 surface of substrate includes:
First stack layer 2 and first insulation connecting layer 3 are performed etching, in first stack layer 2 and institute It states and is formed in the first insulation connecting layer 3 through first stack layer 2 and first insulation connecting layer 3, and extend to described First through hole 5 in 1 surface of substrate；The first through hole 5 is cleaned.
It, can be with it should be noted that when being performed etching to first stack layer 2 and first insulation connecting layer 3 Wet etching is selected, dry etching is also can choose, can also be applied in combination, the present invention to this and without limitation, specifically regards feelings Depending on condition.
It should also be noted that, when 3 surface of the first insulation connecting layer is formed with the first mask layer 4, the is being formed It further include the etching to first mask layer 4 when one through-hole 5.
S103: as shown in Fig. 2, forming first passage structure 6 on 1 surface of the substrate that first through hole 5 exposes to the open air.It is optional , in one embodiment of the invention, the first passage structure 6 is silicon layer, and formation process is selective epitaxial process.
S104: the first functional layer is formed in 5 side wall of first through hole.
Specifically, in one embodiment of the invention, forming the first functional layer in 5 side wall of first through hole includes:
As shown in figure 3, forming the first tunnelling in the side wall of the first through hole 5 and the surface of the first passage structure 6 Layer 7, for generating charge, optionally, first tunnel layer 7 is oxide layer, and formation process is depositing operation；
The first accumulation layer 8 is formed on 7 surface of the first tunnel layer, for storing charge, optionally, first storage Layer 8 is nitration case, and formation process is depositing operation；
The first barrier layer 9 is formed in the first storage layer surface 8, for stopping the charge in first accumulation layer 8 Outflow, optionally, first barrier layer 9 are oxide layer, and formation process is depositing operation；
As shown in figure 4, the first protective layer 10 is formed on 9 surface of the first barrier layer, for protecting described first to stop Layer 9 is damaged in subsequent removal technique, and optionally, first protective layer 10 is amorphous silicon layer, and formation process is deposition Technique；
Continue as shown in figure 4, removal first protective layer 10, the first barrier layer 9, first accumulation layer 8 and described First tunnel layer 7 is located at the part on 6 surface of first passage structure, forms the first functional layer, optionally, the removal technique For etching technics and cleaning process.
S105: second channel structure is sequentially formed in the first functional layer side wall and 6 surface of first passage structure With the first interstitital texture, the surface of the second channel structure and first interstitital texture is lower than first insulation connecting layer 3 surfaces.
Specifically, in one embodiment of the invention, in the first functional layer side wall and the first passage structure Surface sequentially forms second channel structure and the first interstitital texture, the table of the second channel structure and first interstitital texture Face includes: lower than 3 surface of the first insulation connecting layer
Connect as shown in figure 5, being formed and covering 10 side wall of the first protective layer, 5 bottom of the first through hole and the first insulation The second channel layer 11 on 3 surface of layer is connect, optionally, the second channel layer 11 is amorphous silicon layer, and formation process is depositing operation；
As shown in fig. 6, the first filled layer 12 for covering the second channel layer 11 is formed, and optionally, first filling Layer 12 is oxide layer, and formation process is depositing operation；
As shown in fig. 7, removal part first filled layer 12, so that 12 surface of the first filled layer is lower than described the One insulation connecting layer, 3 surface forms the first interstitital texture, and optionally, the removal technique is etching technics；
As shown in figure 8, the removal part second channel layer 11, so that 11 surface of second channel layer is lower than described the One insulation connecting layer 3 forms second channel structure, and optionally, the removal technique is etching technics.
It should be noted that in embodiments of the present invention, the upper surface of the second channel structure can be higher than described the The upper surface of one stack layer 2, can also be lower than the upper surface of first stack layer 2, the present invention to this and without limitation, as long as Guarantee upper surface of the upper surface not less than top layer oxide layer in first stack layer 2 of the second channel structure.It can Choosing, the upper surface of the second channel structure is concordant with the upper surface of top layer oxide layer in first stack layer 2.
S106: the first groove is formed in first insulation connecting layer 3, first groove is in the substrate 1 Projection of the first through hole in the substrate 1 is completely covered in projection.
Specifically, in one embodiment of the invention, forming the first groove, institute in first insulation connecting layer 3 It states projection of first groove in the substrate 1 projection of the first through hole in the substrate 1 is completely covered and include:
Part first insulation connecting layer 3 is removed, is formed through described first absolutely in first insulation connecting layer 3 The first through hole is completely covered described in first groove of edge articulamentum 3, projection of first groove in the substrate 1 Projection in substrate 1.Optionally, projected area of first groove in the substrate 1 is greater than the first through hole in institute State the projected area in substrate 1.
It should be noted that when 3 surface of the first insulation connecting layer is formed with the first mask layer 4, described first The first groove is formed in insulation connecting layer 3, the first through hole is completely covered in projection of first groove in the substrate 1 Projection in the substrate 1 includes:
As shown in figure 9, removal first mask layer 4；
As shown in Figure 10,3 surface of the first insulation connecting layer is planarized；
Continue as shown in Figure 10, to remove part first insulation connecting layer 3, the shape in first insulation connecting layer 3 At the first groove 13 for running through first insulation connecting layer 3, projection of first groove 13 in the substrate 1 is covered completely Cover projection of the first through hole 5 in the substrate 1.
S107: as shown in figure 11, third channel structure 14, the third channel structure are formed in first groove 13 14 are in contact with the second channel structure, and third channel structure 14 is prominent along the radially outward direction of the first through hole In the first functional layer.Optionally, 14 formation process of the third channel structure are depositing operation.
S108: as shown in figure 12, the second stacking is sequentially formed away from 1 side of substrate in the third channel structure 14 Layer 15 and the second insulation connecting layer 16, second stack layer 15 are made of the multiple staggeredly oxide layer of superposition and nitration cases.It can Choosing, oxide layer and the number of plies summation of nitration case are not less than 64 in second stack layer 15, but the present invention does not limit this It is fixed, specifically depend on the circumstances.
Specifically, in one embodiment of the invention, second insulation connecting layer 16 is silicon oxide layer, but of the invention To this and without limitation, as long as guaranteeing the material of second insulation connecting layer 16 and nitration case described in second stack layer 15 Material is different, and has insulation function.
It should be noted that on the basis of the above embodiments, in one embodiment of the invention, this method is also wrapped It includes:
The second mask layer 17 is formed on 16 surface of the second insulation connecting layer, optionally, second mask layer 17 wraps Include the nitration case positioned at second insulation connecting layer surface and the oxide layer positioned at the nitridation layer surface.
S109: continue as shown in figure 13, to be formed completely through second stack layer 15 and second insulation connecting layer 16, and the second through-hole 18 in 14 surface of third channel structure is extended to, second through-hole 18 is in the substrate 1 Projection is at least partly overlapping with projection of the first through hole 5 in the substrate 1.
Specifically, in one embodiment of the invention, being formed completely through second stack layer 15 and described second Insulation connecting layer 16, and the second through-hole 18 extended in 14 surface of third channel structure includes:
Second stack layer 15 and second insulation connecting layer 16 are performed etching, in 15 He of the second stack layer It is formed in second insulation connecting layer 16 and runs through second stack layer 15 and second insulation connecting layer 16, and extended to The second through-hole 18 in 14 surface of third channel structure；Second through-hole 18 is cleaned.
It should be noted that in embodiments of the present invention, second through-hole 18 can extend to the third channel knot 14 surface of structure can also extend in 14 surface of third channel structure, the present invention to this and without limitation, as long as after guaranteeing The continuous fourth lane structure formed can directly be contacted with the third channel structure.
It should also be noted that, when being performed etching to second stack layer 15 and second insulation connecting layer 16, Can choose wet etching, also can choose dry etching, can also be applied in combination, the present invention to this and without limitation, specifically It depends on the circumstances.
On the basis of the above embodiments, in one embodiment of the invention, when 16 table of the second insulation connecting layer It further include the etching to second mask layer 17 when forming the second through-hole 18 when face is formed with the second mask layer 17.It needs Illustrate, in embodiments of the present invention, boundary line and institute of second mask layer 17 towards 18 side of the second through-hole The first mask layer 4 is stated towards the distance between the boundary line of 5 side of first through hole a maximum no more than 15nm.
S1010: the second functional layer is formed in 18 side wall of the second through-hole.
Specifically, in one embodiment of the invention, forming the second functional layer in second through-hole side wall includes:
As shown in figure 14, the second tunnel is formed on the surface of the side wall of second through-hole 18 and the second channel structure 14 Layer 19 is worn, for generating charge, optionally, second tunnel layer 19 is oxide layer, and formation process is depositing operation；
The second accumulation layer 20 is formed on 19 surface of the second tunnel layer, for storing charge, optionally, described second is deposited Reservoir 20 is nitration case, and formation process is depositing operation；
The second barrier layer 21 is formed on 20 surface of the second accumulation layer, for stopping the electricity in second accumulation layer 20 Lotus outflow, optionally, second barrier layer 21 is oxide layer, and formation process is depositing operation；
As shown in figure 15, the second protective layer 22 is formed on 21 surface of the second barrier layer, for protecting second resistance Barrier 21 is damaged in subsequent removal technique, and optionally, second protective layer 22 is amorphous silicon layer, and formation process is heavy Product technique；
Continue as shown in figure 15, to remove second protective layer 22, the second barrier layer 21, second accumulation layer 20 and institute The part that the second tunnel layer 19 is located at 14 surface of second channel structure is stated, the second functional layer, optionally, the removal are formed Technique is etching technics and cleaning process.
S1012: fourth lane structure and are sequentially formed in the second functional layer side wall and second via bottoms Two interstitital textures, the surface of the fourth lane structure are higher than the surface of second interstitital texture.
Specifically, in one embodiment of the invention, in the second functional layer side wall and the third channel structure Surface sequentially forms fourth lane structure and the second interstitital texture, and the surface of the fourth lane structure is higher than second filling The surface of structure includes:
As shown in figure 16, it is formed and covers 22 side wall of the second protective layer, 18 bottom of the second through-hole and the second insulation The fourth lane layer 23 on 3 surface of articulamentum, optionally, the fourth lane layer 23 are amorphous silicon layer, and formation process is deposition work Skill；
As shown in figure 17, the second filled layer 29 for covering the fourth lane layer 23 is formed, optionally, second filling Layer 29 is oxide layer, and formation process is depositing operation；
As shown in figure 18, part second filled layer 29 is removed, so that 29 surface of the second filled layer is lower than described Second insulation connecting layer, 3 surface forms the second interstitital texture, and optionally, the removal technique is etching technics；
As shown in figure 19, the part that the fourth lane layer 23 is located at second insulation connecting layer surface is removed, is formed Fourth lane structure, the surface of the fourth lane structure are higher than the surface of second interstitital texture, optionally, the removal Technique is etching technics.
It should be noted that in embodiments of the present invention, the upper surface of the fourth lane structure can be higher than described the The upper surface of two stack layers, can also be lower than the upper surface of second stack layer, the present invention to this and without limitation, as long as guarantor Demonstrate,prove upper surface of the upper surface not less than top layer oxide layer in second stack layer of the fourth lane structure.It is optional , the upper surface of the fourth lane structure is concordant with the upper surface of top layer oxide layer in second stack layer.
S1013: the 5th is formed in the second groove that the fourth lane structure and second interstitital texture are formed and is led to Road structure, the Five-channel structure are in contact with the fourth lane structure.
Specifically, in one embodiment of the invention, when second insulation connecting layer surface is formed with the second exposure mask When layer, Five-channel structure is formed in the second groove that the fourth lane structure and second interstitital texture are formed, institute It states Five-channel structure and is in contact with the fourth lane structure and include:
As shown in figure 20, the is formed in the second groove that the fourth lane structure and second interstitital texture are formed Five-channel structure；
Remove second mask layer；
As shown in figure 21, second insulation connecting layer surface is planarized.
Correspondingly, this three the embodiment of the invention also provides a kind of three-dimensional storage formed using above-mentioned forming method Tieing up memory includes:
Substrate, the substrate surface are formed with the first stack layer and the first insulation connecting layer, and first stack layer is by more A staggeredly oxide layer of superposition and nitration case are constituted；
Through first stack layer and first insulation connecting layer, and first extended in the substrate surface is led to Hole；
It is formed in the first passage structure for the substrate surface that first through hole exposes to the open air；
It is formed in the first functional layer of the first through hole side wall；
It is sequentially formed in the second channel structure and of the first functional layer side wall and the first passage body structure surface The surface of one interstitital texture, the second channel structure and first interstitital texture is lower than the first insulation connecting layer table Face；
The first groove being formed in first insulation connecting layer, the projection of first groove on the substrate are complete The projection of first through hole described in all standing on the substrate；
The third channel structure being formed in first groove, the third channel structure and the second channel structure It is in contact；
The third channel structure is sequentially formed in away from the second stack layer of the substrate side and the second insulation connection Layer, second stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；
Through second stack layer and second insulation connecting layer, and extend in the third channel body structure surface The second through-hole, second through-hole on the substrate projection with the projection of the first through hole on the substrate at least Part is overlapping；
It is formed in the second functional layer of second through-hole side wall；
It is sequentially formed in the fourth lane structure and of the second functional layer side wall and second via bottoms surface Two interstitital textures, the surface of the fourth lane structure are higher than the surface of second interstitital texture；
The Five-channel knot being formed in the second groove that the fourth lane structure and second interstitital texture are formed Structure, the Five-channel structure are in contact with the fourth lane structure.
From the foregoing, it will be observed that the forming method of the channel pore structure of three-dimensional storage provided by the embodiment of the present invention, passes through Through-hole formation process greatly reduces twice come the channel pore structure formed in the three-dimensional storage for one through-hole and the second through-hole The technology difficulty and cost of the channel pore structure, solve under identical bore, and technique caused by through-hole depth-to-width ratio is excessive is difficult The big and at high cost problem of degree, while also reducing the manufacture craft difficulty and cost of the three-dimensional storage.
In addition, the embodiment of the invention also provides the forming method of channel pore structure in another three-dimensional storage, it is special Sign is that the three-dimensional storage includes along first area, second area and the third region of word-line direction arrangement, wherein institute It states first area and is used to form channel pore structure, the third region is used to form insulation ring structure, this method comprises:
S201: as shown in figure 22, substrate 1 is provided, 1 surface of substrate is formed with the first stack layer 2 and the first insulation connects Layer 3 is connect, first stack layer 2 is made of the multiple staggeredly oxide layer of superposition and nitration cases.Optionally, first stack layer Oxide layer and the number of plies summation of nitration case are not less than 64 in 2, but the present invention is to this and without limitation, specifically depends on the circumstances.
Specifically, in one embodiment of the invention, first insulation connecting layer 3 is silicon oxide layer, but of the invention To this and without limitation, as long as guaranteeing the material of first insulation connecting layer 3 and nitration case described in first stack layer 2 Difference, and there is insulation function.
It should be noted that on the basis of the above embodiments, in one embodiment of the invention, this method is also wrapped It includes:
The first mask layer 4 is formed on 3 surface of the first insulation connecting layer, optionally, first mask layer 4 includes position Nitration case in 3 surface of the first insulation connecting layer and the oxide layer positioned at the nitridation layer surface.
S202: continue as shown in figure 22, in the first area 100 (i.e. Channel hole), the second area 200 (i.e. SS dummy hole) and the third region 300 (i.e. TAC barrier) is formed completely through first stack layer 2 With first insulation connecting layer 3, and the first through hole 5 in 1 surface of substrate is extended to.It should be noted that vertical In in 1 surface direction of substrate, the first through hole depth at the third region 300 is greater than the first area 100 The depth of the first through hole at place.
It should also be noted that, when 3 surface of the first insulation connecting layer is formed with the first mask layer 4, the is being formed It further include the etching to first mask layer 4 when one through-hole.
S203: as shown in figure 23, first passage structure 6 is formed on 1 surface of the substrate that first through hole 5 exposes to the open air.
S204: the first functional layer is formed in 5 side wall of first through hole.
Specifically, in one embodiment of the invention, forming the first functional layer in the first through hole side wall includes:
As shown in figure 24, the first tunnelling is formed on the surface of the side wall of the first through hole 5 and the first passage structure 6 Layer 7, for generating charge, optionally, first tunnel layer 7 is oxide layer, and formation process is depositing operation；
The first accumulation layer 8 is formed on 7 surface of the first tunnel layer, for storing charge, optionally, first storage Layer 8 is nitration case, and formation process is depositing operation；
The first barrier layer 9 is formed on 8 surface of the first accumulation layer, for stopping the charge in first accumulation layer 8 Outflow, optionally, first barrier layer 9 are oxide layer, and formation process is depositing operation；
As shown in figure 25, the first protective layer 10 is formed on 9 surface of the first barrier layer, for avoiding described first from stopping Layer 9 is damaged in subsequent removal technique, and optionally, first protective layer 10 is amorphous silicon layer, and formation process is deposition Technique；
Continue as shown in figure 25, to remove first protective layer 10, the first barrier layer 9, first accumulation layer 8 and described First tunnel layer 7 is located at the part on 6 surface of first passage structure, forms the first functional layer, optionally, the removal technique For etching technics and cleaning process.
S205: the first functional layer side wall and the first passage body structure surface sequentially form second channel structure and The surface of first interstitital texture, the second channel structure and first interstitital texture is lower than first insulation connecting layer 3 Surface.
Specifically, in one embodiment of the invention, in the first functional layer side wall and the first passage structure Surface sequentially forms second channel structure and the first interstitital texture, the table of the second channel structure and first interstitital texture Face includes: lower than 3 surface of the first insulation connecting layer
As shown in figure 26, it is formed and covers 10 side wall of the first protective layer, 5 bottom of the first through hole and the first insulation company The second channel layer 11 on 3 surface of layer is connect, optionally, the second channel layer 11 is amorphous silicon layer, and formation process is depositing operation；
As shown in figure 27, the first filled layer 12 for covering the second channel layer 11 is formed, optionally, first filling Layer 12 is oxide layer, and formation process is depositing operation；
As shown in figure 28, part first filled layer 12 is removed, so that 12 surface of the first filled layer is lower than described First insulation connecting layer, 3 surface forms the first interstitital texture, and optionally, the removal technique is etching technics；
As shown in figure 29, the part second channel layer 11 is removed, so that 11 surface of second channel layer is lower than described First insulation connecting layer 3 forms second channel structure, and optionally, the removal technique is etching technics.
It should be noted that in embodiments of the present invention, the upper surface of the second channel structure can be higher than described the The upper surface of one stack layer 2, can also be lower than the upper surface of first stack layer 2, the present invention to this and without limitation, as long as Guarantee upper surface of the upper surface not less than top layer oxide layer in first stack layer 2 of the second channel structure.It can Choosing, the upper surface of the second channel structure is concordant with the upper surface of top layer oxide layer in first stack layer 2.
S206: the first groove is formed in first insulation connecting layer 3, first groove is in the substrate 1 Projection of the first through hole in the substrate 1 is completely covered in projection.
Specifically, in one embodiment of the invention, forming the first groove, institute in first insulation connecting layer 3 It states projection of first groove in the substrate 1 projection of the first through hole in the substrate 1 is completely covered and include:
Part first insulation connecting layer 3 is removed, is formed through described first absolutely in first insulation connecting layer 3 The first through hole is completely covered described in first groove of edge articulamentum 3, projection of first groove in the substrate 1 Projection in substrate 1.Optionally, projected area of first groove in the substrate 1 is greater than the first through hole in institute State the projected area in substrate 1.
In another embodiment of the present invention, when 3 surface of the first insulation connecting layer is formed with the first mask layer 4 When, the first groove is formed in first insulation connecting layer 3, projection of first groove in the substrate 1 is covered completely Covering projection of the first through hole in the substrate 1 includes:
As shown in figure 30, first mask layer 4 is removed；
As shown in figure 31,3 surface of the first insulation connecting layer is planarized；
Continue as shown in figure 31, to remove part first insulation connecting layer 3, the shape in first insulation connecting layer 3 At the first groove 13 for running through first insulation connecting layer 3, projection of first groove 13 in the substrate 1 is covered completely Cover projection of the first through hole 5 in the substrate 1.
S207: as shown in figure 32, third channel structure 14, the third channel structure are formed in first groove 13 14 are in contact with the second channel structure.
S208: as shown in figure 33, the second stacking is sequentially formed away from 1 side of substrate in the third channel structure 14 Layer 15 and the second insulation connecting layer 16, second stack layer 15 are made of the multiple staggeredly oxide layer of superposition and nitration cases.It can Choosing, oxide layer and the number of plies summation of nitration case are not less than 64 in second stack layer 15, but the present invention does not limit this It is fixed, specifically depend on the circumstances.
Specifically, in one embodiment of the invention, second insulation connecting layer 16 is silicon oxide layer, but of the invention To this and without limitation, as long as guaranteeing the material of nitration case described in second insulation connecting layer and second stack layer not Together, and there is insulation function.
It should be noted that on the basis of the above embodiments, in one embodiment of the invention, this method is also wrapped It includes:
The second mask layer 17 is formed on 16 surface of the second insulation connecting layer, optionally, second mask layer 17 wraps Include the nitration case positioned at second insulation connecting layer surface and the oxide layer positioned at the nitridation layer surface.
S209: as shown in figure 34, the first area, the second area and the third region formed completely through Second stack layer 15 and second insulation connecting layer 16, and extend in 14 surface of third channel structure second Through-hole 18, projection and the first through hole 5 projection on the substrate 1 of second through-hole 18 in the substrate 1 are extremely Small part is overlapping.
It should be noted that the third channel structure in the third region may be by second through-hole when concrete technology To this and without limitation completely through, the present invention, as long as guaranteeing the third channel structure of the first area not by described Two through-holes completely through.
Specifically, in one embodiment of the invention, being formed completely through second stack layer and described second absolutely Edge articulamentum, and the second through-hole extended in the third channel body structure surface includes:
Second stack layer and second insulation connecting layer are performed etching, in second stack layer and described It is formed in two insulation connecting layers and runs through second stack layer and second insulation connecting layer, and extend to the third channel The second through-hole in body structure surface；Second hole is cleaned.
It should be noted that in embodiments of the present invention, second through-hole can extend to the third channel structure Surface can also extend in the third channel body structure surface, the present invention to this and without limitation, as long as guaranteeing to be subsequently formed Fourth lane structure can directly be contacted with the third channel structure.
On the basis of the above embodiments, in one embodiment of the invention, when second insulation connecting layer surface It further include the etching to second mask layer when forming the second through-hole when being formed with the second mask layer.It needs to illustrate It is, in embodiments of the present invention, boundary line and first mask of second mask layer towards second through-hole side Layer is not more than 15nm towards the distance between boundary line of the first through hole side is maximum.
S2010: the second functional layer is formed in second through-hole side wall.
Specifically, in one embodiment of the invention, forming the second functional layer in second through-hole side wall includes:
As shown in figure 35, the second tunnel is formed on the surface of the side wall of second through-hole 18 and the second channel structure 14 Layer 19 is worn, for generating charge, optionally, second tunnel layer 19 is oxide layer, and formation process is depositing operation；
The second accumulation layer 20 is formed on 19 surface of the second tunnel layer, for storing charge, optionally, described second is deposited Reservoir 20 is nitration case, and formation process is depositing operation；
The second barrier layer 21 is formed on 20 surface of the second accumulation layer, for stopping the electricity in second accumulation layer 20 Lotus outflow, optionally, second barrier layer 21 is oxide layer, and formation process is depositing operation；
As shown in figure 36, the second protective layer 22 is formed on 21 surface of the second barrier layer, for protecting second resistance Barrier 21 is not damaged in subsequent removal technique, and optionally, second protective layer 22 is amorphous silicon layer, and formation process is Depositing operation；
Continue as shown in figure 36, to remove second protective layer 22, the second barrier layer 21, second accumulation layer 20 and institute The part that the second tunnel layer 19 is located at 14 surface of second channel structure is stated, the second functional layer, optionally, the removal are formed Technique is etching technics and cleaning process.
S2011: in the first area, the corresponding second functional layer side wall and second via bottoms form the Four-way structure, and is formed in the first area, corresponding second through-hole of the second area and the third region Two interstitital textures, the surface of the fourth lane structure are higher than the surface of second interstitital texture.
Specifically, in one embodiment of the invention, in the corresponding second functional layer side wall in the first area Fourth lane structure is formed with second via bottoms, and in the first area, the second area and the third area The second interstitital texture is formed in corresponding second through-hole in domain, the surface of the fourth lane structure is higher than second interstitital texture Surface include:
As shown in figure 37, it is formed in the first area, second area and the second area and covers second function The fourth lane layer 23 of layer side wall, second via bottoms and second insulation connecting layer surface；
As shown in figure 38, it is formed in the first area, second area and the second area and covers the fourth lane The third filled layer 24 of layer 23 has the air gap in the third filled layer 24；
As shown in figure 39, third mask layer 25 is formed on the surface of the corresponding first area of the third filled layer 24；
It is exposure mask with the third mask layer 25, removes the third filled layer 24 and be located at the second area and described The part in three regions；
As shown in figure 40, the third mask layer 25 is removed；
Be located at the part of the first area as exposure mask using the third filled layer 24, removal be located at the second area and The fourth lane layer 23 in the third region；
As shown in figure 41, the 4th is formed in the second function layer surface for being located at the second area and the third region to fill out Layer 27 is filled, the filling capacity of the 4th filled layer 27 is better than the third filled layer 24, i.e., described in same removal technique The removal rate of 4th filled layer is less than the removal rate of the third filled layer；
As shown in figure 42, removal is located at the third filled layer 24 on 23 surface of fourth lane layer of the first area；
As shown in figure 43, second is formed in the second through-hole of the first area, second area and the third region Filled layer 29；
As shown in figure 44, part second filled layer 29 is removed, makes the surface of second filled layer 29 lower than described The surface of second insulation connecting layer 16 forms the second interstitital texture；
The part that the fourth lane layer 23 is located at 16 surface of the second insulation connecting layer is removed, form fourth lane Structure, the surface of the fourth lane structure are higher than the surface of second interstitital texture.
S2012: the 5th is formed in the second groove that the fourth lane structure and second interstitital texture are formed and is led to Road structure, the Five-channel structure are in contact with the fourth lane structure.
Specifically, in one embodiment of the invention, when second insulation connecting layer surface is formed with the second exposure mask When layer, Five-channel structure packet is formed in the second groove that the fourth lane structure and second interstitital texture are formed It includes:
As shown in figure 45, the is formed in the second groove that the fourth lane structure and second interstitital texture are formed Five-channel structure 30；
Remove second mask layer；
As shown in figure 46,16 surface of the second insulation connecting layer is planarized.
Correspondingly, the three-dimensional storage includes along wordline side the embodiment of the invention also provides a kind of three-dimensional storage To the first area of arrangement, second area and third region, wherein the first area is used to form channel pore structure, described Third region is used to form insulation ring structure, and edge includes: perpendicular to the three-dimensional storage surface direction
Substrate, the substrate surface are formed with the first stack layer and the first insulation connecting layer, and first stack layer is by more A staggeredly oxide layer of superposition and nitration case are constituted；
Positioned at the first area, the second area and the third region, completely through first stack layer and First insulation connecting layer, and extend to the first through hole in the substrate surface；
It is formed in the first passage structure for the substrate surface that first through hole exposes to the open air；
It is formed in the first functional layer of the first through hole side wall；
It is sequentially formed at the second channel structure and of the first functional layer side wall and the first passage body structure surface The surface of one interstitital texture, the second channel structure and first interstitital texture is lower than the first insulation connecting layer table Face；
The first groove being formed in first insulation connecting layer, the projection of first groove on the substrate are complete The projection of first through hole described in all standing on the substrate；
The third channel structure being formed in first groove, the third channel structure and the second channel structure It is in contact；
The third channel structure is sequentially formed at away from the second stack layer of the substrate side and the second insulation connection Layer, second stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；
In the first area, the second area and the third region, completely through second stack layer and institute The second insulation connecting layer is stated, and extends to the second through-hole in the third channel body structure surface, second through-hole is described Projection and projection of the first through hole in the substrate 1 in substrate is at least partly overlapping；
It is formed in the second functional layer of second through-hole side wall；
It is formed in the four-way of the first area corresponding second functional layer side wall and second via bottoms Road structure, and it is formed in the first area, in corresponding second through-hole of the second area and the third region Two interstitital textures, the surface of the fourth lane structure are higher than the surface of second interstitital texture；
The Five-channel knot being formed in the second groove that the fourth lane structure and second interstitital texture are formed Structure, the Five-channel structure are in contact with the fourth lane structure.
From the foregoing, it will be observed that in three-dimensional storage provided by the embodiment of the present invention channel pore structure forming method, pass through Through-hole formation process greatly reduces twice come the channel pore structure formed in the three-dimensional storage for one through-hole and the second through-hole The technology difficulty and cost of the channel pore structure, solve under identical bore, and technique caused by through-hole depth-to-width ratio is excessive is difficult Degree with problem at high cost, reduces the formation process difficulty and cost of the three-dimensional storage greatly.
Moreover, in three-dimensional storage provided by the embodiment of the present invention channel pore structure forming method, the four-way Road structure exists only in the first area, may be not present in the first area, so that in the three-dimensional storage, Fifth hole structure described in the first area is electrically connected with the first passage structure, and the 5th is logical described in the third region Road structure is electrically insulated with the first passage structure, thus when being applied to the three-dimensional storage with dead ring, it can be in institute It states and forms insulation ring structure in the third region while first area forms channel pore structure, simple process, cost is relatively low.
Various pieces are described in a progressive manner in this specification, and what each some importance illustrated is and other parts Difference, same and similar part may refer to each other between various pieces.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention It is not intended to be limited to embodiment illustrated herein, and is to fit to consistent with the principles and novel features disclosed in this article Widest scope.

Claims (12)

1. the forming method of channel pore structure in a kind of three-dimensional storage, which is characterized in that this method comprises:
Substrate is provided, the substrate surface is formed with the first stack layer and the first insulation connecting layer, and first stack layer is by more A staggeredly oxide layer of superposition and nitration case are constituted；
Formed completely through first stack layer and first insulation connecting layer, and extend in the substrate surface the One through-hole；
First passage structure is formed in the substrate surface that first through hole exposes to the open air；
The first functional layer is formed in the first through hole side wall；
Second channel structure and the first filling are sequentially formed in the first functional layer side wall and the first passage body structure surface The surface of structure, the second channel structure and first interstitital texture is lower than first insulation connecting layer surface；
The first groove is formed in first insulation connecting layer, the projection of first groove on the substrate is completely covered The projection of the first through hole on the substrate；
Third channel structure is formed in first groove, the third channel structure connects with the second channel structure Touching, the third channel structure protrude from first functional layer along the radially outward direction of the first through hole；
The second stack layer and the second insulation connecting layer are sequentially formed away from the substrate side in the third channel structure, it is described Second stack layer is made of the multiple staggeredly oxide layer of superposition and nitration cases；
It is formed completely through second stack layer and second insulation connecting layer, and extends to the third channel structure table The second through-hole in face, the projection and the projection of the first through hole on the substrate of second through-hole on the substrate It is at least partly overlapping；
The second functional layer is formed in second through-hole side wall；
Fourth lane structure and the second filling are sequentially formed in the second functional layer side wall and second via bottoms surface Structure, the surface of second interstitital texture are lower than the surface of the fourth lane structure；
Five-channel structure is formed in the second groove that the fourth lane structure and second interstitital texture are formed, it is described Five-channel structure is in contact with the fourth lane structure.
2. forming method according to claim 1, which is characterized in that form the first functional layer in the first through hole side wall Include:
The first tunnel layer is formed in the side wall of the first through hole and the surface of the first passage structure, for generating charge；
The first accumulation layer is formed in the first tunnelling layer surface, for storing charge；
The first barrier layer is formed in the first storage layer surface, for stopping the charge in first accumulation layer to flow out；
The first protective layer is formed in first barrier layer surface, for protecting first barrier layer in subsequent removal technique It is damaged；
First protective layer, the first barrier layer, first accumulation layer and first tunnel layer are removed positioned at described first The part on channel design surface forms the first functional layer.
3. forming method according to claim 1, which is characterized in that lead in the first functional layer side wall and described first Road body structure surface sequentially forms second channel structure and the first interstitital texture, the second channel structure and the first filling knot The surface of structure includes: lower than first insulation connecting layer surface
Form the second channel for covering the first protective layer side wall, the first passage structure and the first insulation connecting layer surface Layer；
Form the first filled layer for covering the second channel layer；
Part first filled layer is removed, so that the first filling layer surface is lower than first insulation connecting layer surface, Form the first interstitital texture；
The part second channel layer is removed, so that the second channel layer surface is lower than first insulation connecting layer, is formed Second channel structure.
4. forming method according to claim 1, which is characterized in that this method further include: in the first insulation connection Layer surface forms the first mask layer.
5. forming method according to claim 4, which is characterized in that it is recessed to form first in first insulation connecting layer Slot, the projection of first groove on the substrate are completely covered the projection of the first through hole on the substrate and include:
Remove first mask layer；
Planarize first insulation connecting layer surface；
Part first insulation connecting layer is removed, is formed in first insulation connecting layer through the first insulation connection The first through hole is completely covered on the substrate in first groove of layer, the projection of first groove on the substrate Projection.
6. forming method according to claim 1, which is characterized in that lead in the second functional layer side wall and described second Hole bottom sequentially forms fourth lane structure and the second interstitital texture, the fourth lane structure and second interstitital texture Surface includes: lower than second insulation connecting layer surface
Form the fourth lane for covering the second protective layer side wall, second via bottoms and the second insulation connecting layer surface Layer；
Form the second filled layer for covering the fourth lane layer；
Part second filled layer is removed, so that the second filling layer surface is lower than second insulation connecting layer surface, Form the second interstitital texture；
Two parts that the fourth lane layer is located at second insulation connecting layer surface are removed, fourth lane structure, institute are formed The surface for stating fourth lane structure is higher than the surface of second interstitital texture.
7. a kind of three-dimensional storage characterized by comprising
Substrate, the substrate surface are formed with the first stack layer and the first insulation connecting layer, and first stack layer is by multiple friendships The oxide layer and nitration case of mistake superposition are constituted；
Through first stack layer and first insulation connecting layer, and extend to the first through hole in the substrate surface；
It is formed in the first passage structure for the substrate surface that first through hole exposes to the open air；
It is formed in the first functional layer of the first through hole side wall；
The second channel structure and first for being sequentially formed in the first functional layer side wall and the first passage body structure surface are filled out Fill structure, the surface of the second channel structure and first interstitital texture is lower than first insulation connecting layer surface；
The first groove being formed in first insulation connecting layer, the projection of first groove on the substrate are covered completely Cover the projection of the first through hole on the substrate；
The third channel structure being formed in first groove, the third channel structure connect with the second channel structure Touching, the third channel structure protrude from first functional layer along the radially outward direction of the first through hole；
It is sequentially formed in the second stack layer and the second insulation connecting layer that the third channel structure deviates from the substrate side, institute The second stack layer is stated to be made of the multiple staggeredly oxide layer of superposition and nitration cases；
Through second stack layer and second insulation connecting layer, and extend in the third channel body structure surface Two through-holes, second through-hole on the substrate projection with the projection of the first through hole on the substrate at least partly It is overlapping；
It is formed in the second functional layer of second through-hole side wall；
The fourth lane structure and second for being sequentially formed in the second functional layer side wall and second via bottoms surface are filled out Structure is filled, the surface of the fourth lane structure is higher than the surface of second interstitital texture；
The Five-channel structure being formed in the second groove that the fourth lane structure and second interstitital texture are formed, institute Five-channel structure is stated to be in contact with the fourth lane structure.
8. the forming method of channel pore structure in a kind of three-dimensional storage, which is characterized in that the three-dimensional storage includes along word First area, second area and the third region of line direction arrangement, wherein the first area is used to form channel pore structure, The third region is used to form insulation ring structure, this method comprises:
Substrate is provided, the substrate surface is formed with the first stack layer and the first insulation connecting layer, and first stack layer is by more A staggeredly oxide layer of superposition and nitration case are constituted；
It is formed in the first area, the second area and the third region completely through first stack layer and described First insulation connecting layer, and extend to the first through hole in the substrate surface；
First passage structure is formed in the substrate surface that first through hole exposes to the open air；
The first functional layer is formed in the first through hole side wall；
Second channel structure and the first filling are sequentially formed in the first functional layer side wall and the first passage body structure surface The surface of structure, the second channel structure and first interstitital texture is lower than first insulation connecting layer surface；
The first groove is formed in first insulation connecting layer, the projection of first groove on the substrate is completely covered The projection of the first through hole on the substrate；
Third channel structure is formed in first groove, the third channel structure connects with the second channel structure Touching, the third channel structure protrude from first functional layer along the radially outward direction of the first through hole；
The second stack layer and the second insulation connecting layer are sequentially formed away from the substrate side in the third channel structure, it is described Second stack layer is made of the multiple staggeredly oxide layer of superposition and nitration cases；
It is formed in the first area, the second area and the third region completely through second stack layer and described Second insulation connecting layer, and the second through-hole in the third channel body structure surface is extended to, second through-hole is in the base Projection and the projection of the first through hole on the substrate on bottom is at least partly overlapping；
The second functional layer is formed in second through-hole side wall；
In the first area, the corresponding second functional layer side wall and second via bottoms form fourth lane structure, And the second interstitital texture is formed in the first area, corresponding second through-hole of the second area and the third region, The surface of the fourth lane structure is higher than the surface of second interstitital texture；
Five-channel structure is formed in the second groove that the fourth lane structure and second interstitital texture are formed, it is described Five-channel structure is in contact with the fourth lane structure.
9. forming method according to claim 8, which is characterized in that in corresponding second function in the first area Layer side wall and second via bottoms form fourth lane structure, and in the first area, the second area and described The second interstitital texture is formed in corresponding second through-hole in third region, the surface of the fourth lane structure is higher than described second and fills out The surface for filling structure includes:
It is formed in the first area, second area and the second area and covers the second functional layer side wall, described second The fourth lane layer of via bottoms and second insulation connecting layer surface；
The third filled layer for covering the fourth lane layer is formed in the first area, second area and the second area, There is the air gap in the third filled layer；
Third mask layer is formed on the surface that the third filled layer corresponds to the first area；
Using the third mask layer as exposure mask, removes the third filled layer and be located at the second area and the third region Part；
Remove the third mask layer；
It is located at the part of the first area as exposure mask using the third filled layer, removal is located at the second area and described the The fourth lane layer in three regions；
The 4th filled layer is formed in the second function layer surface for being located at the second area and the third region, the described 4th fills out The filling capacity for filling layer is better than the third filled layer；
Removal is located at the third filled layer of the fourth lane layer surface of the first area；
The second filled layer is formed in the second through-hole of the first area, second area and the third region；
Part second filled layer is removed, the surface of second filled layer is made to be lower than the table of second insulation connecting layer Face forms the second interstitital texture；
The part that the fourth lane layer is located at second insulation connecting layer surface is removed, fourth lane structure is formed, it is described Fourth lane body structure surface is higher than second interstitital texture surface.
10. forming method according to claim 8, which is characterized in that form the first function in the first through hole side wall Layer include:
The first tunnel layer is formed in the side wall of the first through hole and the surface of the first passage structure, for generating charge；
The first accumulation layer is formed in the first tunnelling layer surface, for storing charge；
The first barrier layer is formed in the first storage layer surface, for stopping the charge in first accumulation layer to flow out；
The first protective layer is formed in first barrier layer surface, for protecting first barrier layer in subsequent removal technique It is damaged；
First protective layer, the first barrier layer, first accumulation layer and first tunnel layer are removed positioned at described first The part on channel design surface forms the first functional layer.
11. forming method according to claim 8, which is characterized in that in the first functional layer side wall and described first Channel design surface sequentially forms second channel structure and the first interstitital texture, the second channel structure and first filling The surface of structure includes: lower than first insulation connecting layer surface
Form the second channel for covering the first protective layer side wall, the first passage structure and the first insulation connecting layer surface Layer；
Form the first filled layer for covering the second channel layer；
Part first filled layer is removed, so that the first filling layer surface is lower than first insulation connecting layer surface, Form the first interstitital texture；
The part second channel layer is removed, so that the second channel layer surface is lower than first insulation connecting layer, is formed Second channel structure.
12. a kind of three-dimensional storage, which is characterized in that the three-dimensional storage include along word-line direction arrangement first area, Second area and third region, wherein the first area is used to form channel pore structure, and the third region is used to form absolutely Edge ring structure, edge include: perpendicular to the three-dimensional storage surface direction
Substrate, the substrate surface are formed with the first stack layer and the first insulation connecting layer, and first stack layer is by multiple friendships The oxide layer and nitration case of mistake superposition are constituted；
In the first area, the second area and the third region, completely through first stack layer and described One insulation connecting layer, and extend to the first through hole in the substrate surface；
It is formed in the first passage structure for the substrate surface that first through hole exposes to the open air；
It is formed in the first functional layer of the first through hole side wall；
The second channel structure and first for being sequentially formed at the first functional layer side wall and the first passage body structure surface are filled out Fill structure, the surface of the second channel structure and first interstitital texture is lower than first insulation connecting layer surface；
The first groove being formed in first insulation connecting layer, the projection of first groove on the substrate are covered completely Cover the projection of the first through hole on the substrate；
The third channel structure being formed in first groove, the third channel structure connect with the second channel structure Touching, the third channel structure protrude from first functional layer along the radially outward direction of the first through hole；
It is sequentially formed at the second stack layer and the second insulation connecting layer that the third channel structure deviates from the substrate side, institute The second stack layer is stated to be made of the multiple staggeredly oxide layer of superposition and nitration cases；
In the first area, the second area and the third region, completely through second stack layer and described Two insulation connecting layers, and the second through-hole in the third channel body structure surface is extended to, second through-hole is in the substrate On projection and the projection of the first through hole on the substrate it is at least partly overlapping；
It is formed in the second functional layer of second through-hole side wall；
It is formed in the fourth lane knot of the first area corresponding second functional layer side wall and second via bottoms Structure, and be formed in the first area, second in corresponding second through-hole of the second area and the third region fill out Structure is filled, the surface of the fourth lane structure is higher than the surface of second interstitital texture；
The Five-channel structure being formed in the second groove that the fourth lane structure and second interstitital texture are formed, institute Five-channel structure is stated to be in contact with the fourth lane structure.
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