CN109671667A - A kind of forming method of three-dimensional storage and its channel pore structure - Google Patents
A kind of forming method of three-dimensional storage and its channel pore structure Download PDFInfo
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- CN109671667A CN109671667A CN201811524018.6A CN201811524018A CN109671667A CN 109671667 A CN109671667 A CN 109671667A CN 201811524018 A CN201811524018 A CN 201811524018A CN 109671667 A CN109671667 A CN 109671667A
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- 238000000034 method Methods 0.000 title claims abstract description 98
- 238000003860 storage Methods 0.000 title claims abstract description 54
- 239000011148 porous material Substances 0.000 title claims abstract description 30
- 239000010410 layer Substances 0.000 claims description 618
- 238000009413 insulation Methods 0.000 claims description 190
- 239000000758 substrate Substances 0.000 claims description 136
- 239000002346 layers by function Substances 0.000 claims description 84
- 238000006396 nitration reaction Methods 0.000 claims description 39
- 230000004888 barrier function Effects 0.000 claims description 35
- 239000011241 protective layer Substances 0.000 claims description 29
- 238000009825 accumulation Methods 0.000 claims description 27
- 239000002344 surface layer Substances 0.000 claims 3
- 230000008569 process Effects 0.000 abstract description 36
- 230000015572 biosynthetic process Effects 0.000 abstract description 29
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 22
- 238000005530 etching Methods 0.000 description 21
- 230000006870 function Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
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Abstract
The embodiment of the invention discloses a kind of three-dimensional storage and its forming methods of channel pore structure, by first through hole and the second through-hole twice through-hole formation process come the channel pore structure that is formed in the three-dimensional storage, greatly reduce the technology difficulty and cost of the channel pore structure, it solves under identical bore, the big and at high cost problem of technology difficulty caused by through-hole depth-to-width ratio is excessive, while also reducing the manufacture craft difficulty and cost of the three-dimensional storage.
Description
This case is based on application No. is 201710134782.1 divisional applications
Technical field
The present invention relates to three-dimensional storage technical field more particularly to the shapes of a kind of three-dimensional storage and its channel pore structure
At method.
Background technique
As the stacking number of ON (Oxide/Nitride) in three-dimensional storage (such as 3D NAND) is more and more, so that
The depth of the access opening formed in three-dimensional storage is increasing, and when forming access opening using single etching technics, identical
In the case where aperture, the depth of access opening is bigger, and etching difficulty is bigger.Especially, when the layer number in three-dimensional storage reaches
When 120 or more, then when forming the access opening for running through each lamination using the method that singly etches, there are etch periods to be exponentially increased
The phenomenon that, process efficiency is lower, higher cost.
Summary of the invention
In order to solve the above technical problems, the embodiment of the invention provides a kind of three-dimensional storage and its shapes of channel pore structure
At method, to reduce the technology difficulty and cost of channel pore structure in three-dimensional storage.
To solve the above problems, the embodiment of the invention provides following technical solutions:
The forming method of channel pore structure in a kind of three-dimensional storage, this method comprises: providing substrate, the substrate surface
It is formed with the first stack layer and the first insulation connecting layer, first stack layer is by multiple oxide layers being staggeredly superimposed and nitration case
It constitutes；It is formed completely through first stack layer and first insulation connecting layer, and extended in the substrate surface
First through hole；First passage structure is formed in the substrate surface that first through hole exposes to the open air；It is formed in the first through hole side wall
First functional layer；Second channel structure and are sequentially formed in the first functional layer side wall and the first passage body structure surface
The surface of one interstitital texture, the second channel structure and first interstitital texture is lower than the first insulation connecting layer table
Face；The first groove is formed in first insulation connecting layer, the projection of first groove on the substrate is completely covered
The projection of the first through hole on the substrate；Third channel structure, the third channel are formed in first groove
Structure is in contact with the second channel structure, and the third channel structure is prominent along the radially outward direction of the first through hole
For first functional layer；The second stack layer and second are sequentially formed away from the substrate side in the third channel structure
Insulation connecting layer, second stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；It is formed completely through described
Second stack layer and second insulation connecting layer, and the second through-hole in the third channel body structure surface is extended to, it is described
The projection of second through-hole on the substrate and the projection of the first through hole on the substrate are at least partly overlapping；Described
Second through-hole side wall forms the second functional layer；It is sequentially formed in the second functional layer side wall and second via bottoms surface
Fourth lane structure and the second interstitital texture, the surface of second interstitital texture are lower than the surface of the fourth lane structure；
Form Five-channel structure in the second groove that the fourth lane structure and second interstitital texture are formed, the described 5th
Channel design is in contact with the fourth lane structure.
Optionally, forming the first functional layer in the first through hole side wall includes: side wall and the institute in the first through hole
The surface for stating first passage structure forms the first tunnel layer, for generating charge；First is formed in the first tunnelling layer surface
Accumulation layer, for storing charge；The first barrier layer is formed in the first storage layer surface, for stopping first accumulation layer
In charge outflow；The first protective layer is formed in first barrier layer surface, for protecting first barrier layer subsequent
It is damaged in removal technique；Remove first protective layer, the first barrier layer, first accumulation layer and first tunnelling
Layer is located at the part of the first passage body structure surface, forms the first functional layer.
Optionally, second channel structure is sequentially formed in the first functional layer side wall and the first passage body structure surface
With the first interstitital texture, the surface of the second channel structure and first interstitital texture is lower than first insulation connecting layer
Surface includes: to form covering the first protective layer side wall, the first passage structure and the first insulation connecting layer surface the
Two channel layers；Form the first filled layer for covering the second channel layer；Part first filled layer is removed, so that described the
One filling layer surface is lower than first insulation connecting layer surface, forms the first interstitital texture；Remove the part second channel
Layer forms second channel structure so that the second channel layer surface is lower than first insulation connecting layer.
Optionally, this method further include: form the first mask layer on first insulation connecting layer surface.
Optionally, the first groove is formed in first insulation connecting layer, first groove is on the substrate
It includes: removal first mask layer that the projection of the first through hole on the substrate, which is completely covered, in projection；Described in planarization
First insulation connecting layer surface；Part first insulation connecting layer is removed, is formed and is run through in first insulation connecting layer
First groove of first insulation connecting layer, it is logical that the projection of first groove on the substrate is completely covered described first
The projection of hole on the substrate.
Optionally, fourth lane structure and are sequentially formed in the second functional layer side wall and second via bottoms
The surface of two interstitital textures, the fourth lane structure and second interstitital texture is lower than second insulation connecting layer surface
It include: to form the four-way for covering the second protective layer side wall, second via bottoms and the second insulation connecting layer surface
Channel layer；Form the second filled layer for covering the fourth lane layer；Part second filled layer is removed, so that described second fills out
Layer surface is filled lower than second insulation connecting layer surface, forms the second interstitital texture；It removes the fourth lane layer and is located at institute
Two parts on the second insulation connecting layer surface are stated, fourth lane structure is formed, the surface of the fourth lane structure is higher than described
The surface of second interstitital texture.
A kind of three-dimensional storage comprising: substrate, the substrate surface are formed with the first stack layer and the first insulation connection
Layer, first stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；Through first stack layer and described
First insulation connecting layer, and extend to the first through hole in the substrate surface；It is formed in the substrate that first through hole exposes to the open air
The first passage structure on surface；It is formed in the first functional layer of the first through hole side wall；It is sequentially formed in first function
The second channel structure and the first interstitital texture of layer side wall and the first passage body structure surface, the second channel structure and institute
The surface of the first interstitital texture is stated lower than first insulation connecting layer surface；Be formed in first insulation connecting layer
The projection of the first through hole on the substrate is completely covered in one groove, the projection of first groove on the substrate；
The third channel structure being formed in first groove, the third channel structure are in contact with the second channel structure,
The third channel structure protrudes from first functional layer along the radially outward direction of the first through hole；It is sequentially formed in
The third channel structure deviate from the substrate side the second stack layer and the second insulation connecting layer, second stack layer by
Multiple staggeredly oxide layers of superposition and nitration case are constituted；Through second stack layer and second insulation connecting layer, and prolong
Extend to the second through-hole in the third channel body structure surface, the projection of second through-hole on the substrate and described first
The projection of through-hole on the substrate is at least partly overlapping；It is formed in the second functional layer of second through-hole side wall；Successively shape
The fourth lane structure and the second interstitital texture of second functional layer side wall and second via bottoms surface described in Cheng Yu, it is described
The surface of fourth lane structure is higher than the surface of second interstitital texture；It is formed in the fourth lane structure and described second
The Five-channel structure in the second groove that interstitital texture is formed, the Five-channel structure connect with the fourth lane structure
Touching.
The forming method of channel pore structure in a kind of three-dimensional storage, the three-dimensional storage include arranging along word-line direction
First area, second area and third region, wherein the first area is used to form channel pore structure, the third area
Domain is used to form insulation ring structure, this method comprises: providing substrate, the substrate surface is formed with the first stack layer and first absolutely
Edge articulamentum, first stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；In the first area, described
Second area and the third region are formed completely through first stack layer and first insulation connecting layer, and are extended to
First through hole in the substrate surface；First passage structure is formed in the substrate surface that first through hole exposes to the open air；Described
First through hole side wall forms the first functional layer；It is sequentially formed in the first functional layer side wall and the first passage body structure surface
The surface of second channel structure and the first interstitital texture, the second channel structure and first interstitital texture is lower than described the
One insulation connecting layer surface；The first groove is formed in first insulation connecting layer, first groove is on the substrate
Projection the projection of the first through hole on the substrate is completely covered；Third channel knot is formed in first groove
Structure, the third channel structure are in contact with the second channel structure, and the third channel structure is along the first through hole
Radially outward direction protrudes from first functional layer；It is sequentially formed in the third channel structure away from the substrate side
Second stack layer and the second insulation connecting layer, second stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；
It is formed in the first area, the second area and the third region completely through second stack layer and described second
Insulation connecting layer, and the second through-hole in the third channel body structure surface is extended to, second through-hole is on the substrate
Projection and the projection of the first through hole on the substrate it is at least partly overlapping；Second is formed in second through-hole side wall
Functional layer；In the first area, the corresponding second functional layer side wall and second via bottoms form fourth lane knot
Structure, and the second filling knot is formed in the first area, corresponding second through-hole of the second area and the third region
Structure, the surface of the fourth lane structure are higher than the surface of second interstitital texture；In the fourth lane structure and described
Five-channel structure, the Five-channel structure and the fourth lane knot are formed in the second groove that second interstitital texture is formed
Structure is in contact.
Optionally, the is formed in the corresponding second functional layer side wall in the first area and second via bottoms
Four-way structure, and is formed in the first area, corresponding second through-hole of the second area and the third region
Two interstitital textures, it includes: in firstth area that the surface of the fourth lane structure, which is higher than the surface of second interstitital texture,
Domain, second area and the second area, which are formed, covers the second functional layer side wall, second via bottoms and described the
The fourth lane layer on two insulation connecting layer surfaces；Covering institute is formed in the first area, second area and the second area
The third filled layer of fourth lane layer is stated, there is the air gap in the third filled layer；Institute is corresponded in the third filled layer
The surface for stating first area forms third mask layer；Using the third mask layer as exposure mask, removes the third filled layer and be located at
The part of the second area and the third region；Remove the third mask layer；It is located at the third filled layer described
The part of first area is exposure mask, and removal is located at the fourth lane layer of the second area and the third region；It is being located at institute
The the second function layer surface for stating second area and the third region forms the 4th filled layer, the fillibility of the 4th filled layer
The third filled layer can be better than；Removal is located at the third filled layer of the fourth lane layer surface of the first area；Described
The second filled layer is formed in second through-hole of first area, second area and the third region；Removal part described second is filled out
Layer is filled, so that the surface of second filled layer is lower than the surface of second insulation connecting layer, forms the second interstitital texture；Removal
The fourth lane layer is located at the part on second insulation connecting layer surface, forms fourth lane structure, the fourth lane
Body structure surface is higher than second interstitital texture surface.
Optionally, forming the first functional layer in the first through hole side wall includes: side wall and the institute in the first through hole
The surface for stating first passage structure forms the first tunnel layer, for generating charge；First is formed in the first tunnelling layer surface
Accumulation layer, for storing charge；The first barrier layer is formed in the first storage layer surface, for stopping first accumulation layer
In charge outflow；The first protective layer is formed in first barrier layer surface, for protecting first barrier layer subsequent
It is damaged in removal technique；Remove first protective layer, the first barrier layer, first accumulation layer and first tunnelling
Layer is located at the part of the first passage body structure surface, forms the first functional layer.
Optionally, second channel structure is sequentially formed in the first functional layer side wall and the first passage body structure surface
With the first interstitital texture, the surface of the second channel structure and first interstitital texture is lower than first insulation connecting layer
Surface includes: to form covering the first protective layer side wall, the first passage structure and the first insulation connecting layer surface the
Two channel layers；Form the first filled layer for covering the second channel layer；Part first filled layer is removed, so that described the
One filling layer surface is lower than first insulation connecting layer surface, forms the first interstitital texture；Remove the part second channel
Layer forms second channel structure so that the second channel layer surface is lower than first insulation connecting layer.
A kind of three-dimensional storage, the three-dimensional storage include along word-line direction arrangement first area, second area and
Third region, wherein the first area is used to form channel pore structure, and the third region is used to form insulation ring structure,
Along including: substrate perpendicular to the three-dimensional storage surface direction, the substrate surface is formed with the first stack layer and first absolutely
Edge articulamentum, first stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；In the first area, described
Second area and the third region, completely through first stack layer and first insulation connecting layer, and extend to institute
State the first through hole in substrate surface；It is formed in the first passage structure for the substrate surface that first through hole exposes to the open air；It is formed in
First functional layer of the first through hole side wall；It is sequentially formed at the first functional layer side wall and the first passage structure table
The surface of the second channel structure and the first interstitital texture in face, the second channel structure and first interstitital texture is lower than institute
State the first insulation connecting layer surface；The first groove being formed in first insulation connecting layer, first groove is described
The projection of the first through hole on the substrate is completely covered in projection in substrate；The third being formed in first groove
Channel design, the third channel structure are in contact with the second channel structure, and the third channel structure is along described first
The radially outward direction of through-hole protrudes from first functional layer；The third channel structure is sequentially formed at away from the base
The second stack layer and the second insulation connecting layer of bottom side, second stack layer is by multiple oxide layers and nitridation being staggeredly superimposed
Layer is constituted；In the first area, the second area and the third region, completely through second stack layer and described
Second insulation connecting layer, and the second through-hole in the third channel body structure surface is extended to, second through-hole is in the base
Projection and the projection of the first through hole on the substrate on bottom is at least partly overlapping；It is formed in second through-hole side wall
The second functional layer；It is formed in the of the corresponding second functional layer side wall in the first area and second via bottoms
Four-way structure, and it is formed in the first area, in corresponding second through-hole of the second area and the third region
The second interstitital texture, the surface of the fourth lane structure is higher than the surface of second interstitital texture；It is formed in described
The Five-channel structure in the second groove that four-way structure and second interstitital texture are formed, the Five-channel structure with
The fourth lane structure is in contact.
Compared with prior art, above-mentioned technical proposal has the advantage that
The forming method of the channel pore structure of three-dimensional storage provided by the embodiment of the present invention passes through first through hole and
Through-hole formation process greatly reduces the access opening come the channel pore structure formed in the three-dimensional storage to two through-holes twice
The technology difficulty and cost of structure, solve under identical bore, and technology difficulty caused by through-hole depth-to-width ratio is excessive is big and cost
High problem, while also reducing the manufacture craft difficulty and cost of the three-dimensional storage.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1-Figure 21 is each step of through-hole structure forming method in three-dimensional storage provided by one embodiment of the invention
Cross-sectional view；
Figure 22-Figure 46 is each step of through-hole structure forming method in three-dimensional storage provided by one embodiment of the invention
Cross-sectional view.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
The embodiment of the invention provides a kind of forming methods of channel pore structure in three-dimensional storage, this method comprises:
S101: as shown in Figure 1, providing substrate 1,1 surface of substrate is formed with the first stack layer 2 and the first insulation connection
Layer 3, first stack layer 2 are made of the multiple staggeredly oxide layer of superposition and nitration cases.Optionally, first stack layer 2
Middle oxide layer and the number of plies summation of nitration case are not less than 64, but the present invention is to this and without limitation, specifically depends on the circumstances.
Specifically, in one embodiment of the invention, first insulation connecting layer 3 is silicon oxide layer, but of the invention
To this and without limitation, as long as guaranteeing the material of first insulation connecting layer 3 and nitration case described in first stack layer 2
Difference, and there is insulation function.
It should be noted that on the basis of the above embodiments, in one embodiment of the invention, this method is also wrapped
It includes:
The first mask layer 4 is formed on 3 surface of the first insulation connecting layer, optionally, first mask layer 4 includes position
Nitration case in 3 surface of the first insulation connecting layer and the oxide layer positioned at the nitridation layer surface.
S102: continuing as shown in Figure 1, formed completely through first stack layer 2 and first insulation connecting layer 3,
And extend to the first through hole 5 in 1 surface of substrate.
Specifically, in one embodiment of the invention, being formed completely through first stack layer 2 and described first absolutely
Edge articulamentum 3, and the first through hole 5 extended in 1 surface of substrate includes:
First stack layer 2 and first insulation connecting layer 3 are performed etching, in first stack layer 2 and institute
It states and is formed in the first insulation connecting layer 3 through first stack layer 2 and first insulation connecting layer 3, and extend to described
First through hole 5 in 1 surface of substrate；The first through hole 5 is cleaned.
It, can be with it should be noted that when being performed etching to first stack layer 2 and first insulation connecting layer 3
Wet etching is selected, dry etching is also can choose, can also be applied in combination, the present invention to this and without limitation, specifically regards feelings
Depending on condition.
It should also be noted that, when 3 surface of the first insulation connecting layer is formed with the first mask layer 4, the is being formed
It further include the etching to first mask layer 4 when one through-hole 5.
S103: as shown in Fig. 2, forming first passage structure 6 on 1 surface of the substrate that first through hole 5 exposes to the open air.It is optional
, in one embodiment of the invention, the first passage structure 6 is silicon layer, and formation process is selective epitaxial process.
S104: the first functional layer is formed in 5 side wall of first through hole.
Specifically, in one embodiment of the invention, forming the first functional layer in 5 side wall of first through hole includes:
As shown in figure 3, forming the first tunnelling in the side wall of the first through hole 5 and the surface of the first passage structure 6
Layer 7, for generating charge, optionally, first tunnel layer 7 is oxide layer, and formation process is depositing operation；
The first accumulation layer 8 is formed on 7 surface of the first tunnel layer, for storing charge, optionally, first storage
Layer 8 is nitration case, and formation process is depositing operation；
The first barrier layer 9 is formed in the first storage layer surface 8, for stopping the charge in first accumulation layer 8
Outflow, optionally, first barrier layer 9 are oxide layer, and formation process is depositing operation；
As shown in figure 4, the first protective layer 10 is formed on 9 surface of the first barrier layer, for protecting described first to stop
Layer 9 is damaged in subsequent removal technique, and optionally, first protective layer 10 is amorphous silicon layer, and formation process is deposition
Technique；
Continue as shown in figure 4, removal first protective layer 10, the first barrier layer 9, first accumulation layer 8 and described
First tunnel layer 7 is located at the part on 6 surface of first passage structure, forms the first functional layer, optionally, the removal technique
For etching technics and cleaning process.
S105: second channel structure is sequentially formed in the first functional layer side wall and 6 surface of first passage structure
With the first interstitital texture, the surface of the second channel structure and first interstitital texture is lower than first insulation connecting layer
3 surfaces.
Specifically, in one embodiment of the invention, in the first functional layer side wall and the first passage structure
Surface sequentially forms second channel structure and the first interstitital texture, the table of the second channel structure and first interstitital texture
Face includes: lower than 3 surface of the first insulation connecting layer
Connect as shown in figure 5, being formed and covering 10 side wall of the first protective layer, 5 bottom of the first through hole and the first insulation
The second channel layer 11 on 3 surface of layer is connect, optionally, the second channel layer 11 is amorphous silicon layer, and formation process is depositing operation；
As shown in fig. 6, the first filled layer 12 for covering the second channel layer 11 is formed, and optionally, first filling
Layer 12 is oxide layer, and formation process is depositing operation；
As shown in fig. 7, removal part first filled layer 12, so that 12 surface of the first filled layer is lower than described the
One insulation connecting layer, 3 surface forms the first interstitital texture, and optionally, the removal technique is etching technics；
As shown in figure 8, the removal part second channel layer 11, so that 11 surface of second channel layer is lower than described the
One insulation connecting layer 3 forms second channel structure, and optionally, the removal technique is etching technics.
It should be noted that in embodiments of the present invention, the upper surface of the second channel structure can be higher than described the
The upper surface of one stack layer 2, can also be lower than the upper surface of first stack layer 2, the present invention to this and without limitation, as long as
Guarantee upper surface of the upper surface not less than top layer oxide layer in first stack layer 2 of the second channel structure.It can
Choosing, the upper surface of the second channel structure is concordant with the upper surface of top layer oxide layer in first stack layer 2.
S106: the first groove is formed in first insulation connecting layer 3, first groove is in the substrate 1
Projection of the first through hole in the substrate 1 is completely covered in projection.
Specifically, in one embodiment of the invention, forming the first groove, institute in first insulation connecting layer 3
It states projection of first groove in the substrate 1 projection of the first through hole in the substrate 1 is completely covered and include:
Part first insulation connecting layer 3 is removed, is formed through described first absolutely in first insulation connecting layer 3
The first through hole is completely covered described in first groove of edge articulamentum 3, projection of first groove in the substrate 1
Projection in substrate 1.Optionally, projected area of first groove in the substrate 1 is greater than the first through hole in institute
State the projected area in substrate 1.
It should be noted that when 3 surface of the first insulation connecting layer is formed with the first mask layer 4, described first
The first groove is formed in insulation connecting layer 3, the first through hole is completely covered in projection of first groove in the substrate 1
Projection in the substrate 1 includes:
As shown in figure 9, removal first mask layer 4；
As shown in Figure 10,3 surface of the first insulation connecting layer is planarized；
Continue as shown in Figure 10, to remove part first insulation connecting layer 3, the shape in first insulation connecting layer 3
At the first groove 13 for running through first insulation connecting layer 3, projection of first groove 13 in the substrate 1 is covered completely
Cover projection of the first through hole 5 in the substrate 1.
S107: as shown in figure 11, third channel structure 14, the third channel structure are formed in first groove 13
14 are in contact with the second channel structure, and third channel structure 14 is prominent along the radially outward direction of the first through hole
In the first functional layer.Optionally, 14 formation process of the third channel structure are depositing operation.
S108: as shown in figure 12, the second stacking is sequentially formed away from 1 side of substrate in the third channel structure 14
Layer 15 and the second insulation connecting layer 16, second stack layer 15 are made of the multiple staggeredly oxide layer of superposition and nitration cases.It can
Choosing, oxide layer and the number of plies summation of nitration case are not less than 64 in second stack layer 15, but the present invention does not limit this
It is fixed, specifically depend on the circumstances.
Specifically, in one embodiment of the invention, second insulation connecting layer 16 is silicon oxide layer, but of the invention
To this and without limitation, as long as guaranteeing the material of second insulation connecting layer 16 and nitration case described in second stack layer 15
Material is different, and has insulation function.
It should be noted that on the basis of the above embodiments, in one embodiment of the invention, this method is also wrapped
It includes:
The second mask layer 17 is formed on 16 surface of the second insulation connecting layer, optionally, second mask layer 17 wraps
Include the nitration case positioned at second insulation connecting layer surface and the oxide layer positioned at the nitridation layer surface.
S109: continue as shown in figure 13, to be formed completely through second stack layer 15 and second insulation connecting layer
16, and the second through-hole 18 in 14 surface of third channel structure is extended to, second through-hole 18 is in the substrate 1
Projection is at least partly overlapping with projection of the first through hole 5 in the substrate 1.
Specifically, in one embodiment of the invention, being formed completely through second stack layer 15 and described second
Insulation connecting layer 16, and the second through-hole 18 extended in 14 surface of third channel structure includes:
Second stack layer 15 and second insulation connecting layer 16 are performed etching, in 15 He of the second stack layer
It is formed in second insulation connecting layer 16 and runs through second stack layer 15 and second insulation connecting layer 16, and extended to
The second through-hole 18 in 14 surface of third channel structure；Second through-hole 18 is cleaned.
It should be noted that in embodiments of the present invention, second through-hole 18 can extend to the third channel knot
14 surface of structure can also extend in 14 surface of third channel structure, the present invention to this and without limitation, as long as after guaranteeing
The continuous fourth lane structure formed can directly be contacted with the third channel structure.
It should also be noted that, when being performed etching to second stack layer 15 and second insulation connecting layer 16,
Can choose wet etching, also can choose dry etching, can also be applied in combination, the present invention to this and without limitation, specifically
It depends on the circumstances.
On the basis of the above embodiments, in one embodiment of the invention, when 16 table of the second insulation connecting layer
It further include the etching to second mask layer 17 when forming the second through-hole 18 when face is formed with the second mask layer 17.It needs
Illustrate, in embodiments of the present invention, boundary line and institute of second mask layer 17 towards 18 side of the second through-hole
The first mask layer 4 is stated towards the distance between the boundary line of 5 side of first through hole a maximum no more than 15nm.
S1010: the second functional layer is formed in 18 side wall of the second through-hole.
Specifically, in one embodiment of the invention, forming the second functional layer in second through-hole side wall includes:
As shown in figure 14, the second tunnel is formed on the surface of the side wall of second through-hole 18 and the second channel structure 14
Layer 19 is worn, for generating charge, optionally, second tunnel layer 19 is oxide layer, and formation process is depositing operation；
The second accumulation layer 20 is formed on 19 surface of the second tunnel layer, for storing charge, optionally, described second is deposited
Reservoir 20 is nitration case, and formation process is depositing operation；
The second barrier layer 21 is formed on 20 surface of the second accumulation layer, for stopping the electricity in second accumulation layer 20
Lotus outflow, optionally, second barrier layer 21 is oxide layer, and formation process is depositing operation；
As shown in figure 15, the second protective layer 22 is formed on 21 surface of the second barrier layer, for protecting second resistance
Barrier 21 is damaged in subsequent removal technique, and optionally, second protective layer 22 is amorphous silicon layer, and formation process is heavy
Product technique；
Continue as shown in figure 15, to remove second protective layer 22, the second barrier layer 21, second accumulation layer 20 and institute
The part that the second tunnel layer 19 is located at 14 surface of second channel structure is stated, the second functional layer, optionally, the removal are formed
Technique is etching technics and cleaning process.
S1012: fourth lane structure and are sequentially formed in the second functional layer side wall and second via bottoms
Two interstitital textures, the surface of the fourth lane structure are higher than the surface of second interstitital texture.
Specifically, in one embodiment of the invention, in the second functional layer side wall and the third channel structure
Surface sequentially forms fourth lane structure and the second interstitital texture, and the surface of the fourth lane structure is higher than second filling
The surface of structure includes:
As shown in figure 16, it is formed and covers 22 side wall of the second protective layer, 18 bottom of the second through-hole and the second insulation
The fourth lane layer 23 on 3 surface of articulamentum, optionally, the fourth lane layer 23 are amorphous silicon layer, and formation process is deposition work
Skill；
As shown in figure 17, the second filled layer 29 for covering the fourth lane layer 23 is formed, optionally, second filling
Layer 29 is oxide layer, and formation process is depositing operation；
As shown in figure 18, part second filled layer 29 is removed, so that 29 surface of the second filled layer is lower than described
Second insulation connecting layer, 3 surface forms the second interstitital texture, and optionally, the removal technique is etching technics；
As shown in figure 19, the part that the fourth lane layer 23 is located at second insulation connecting layer surface is removed, is formed
Fourth lane structure, the surface of the fourth lane structure are higher than the surface of second interstitital texture, optionally, the removal
Technique is etching technics.
It should be noted that in embodiments of the present invention, the upper surface of the fourth lane structure can be higher than described the
The upper surface of two stack layers, can also be lower than the upper surface of second stack layer, the present invention to this and without limitation, as long as guarantor
Demonstrate,prove upper surface of the upper surface not less than top layer oxide layer in second stack layer of the fourth lane structure.It is optional
, the upper surface of the fourth lane structure is concordant with the upper surface of top layer oxide layer in second stack layer.
S1013: the 5th is formed in the second groove that the fourth lane structure and second interstitital texture are formed and is led to
Road structure, the Five-channel structure are in contact with the fourth lane structure.
Specifically, in one embodiment of the invention, when second insulation connecting layer surface is formed with the second exposure mask
When layer, Five-channel structure is formed in the second groove that the fourth lane structure and second interstitital texture are formed, institute
It states Five-channel structure and is in contact with the fourth lane structure and include:
As shown in figure 20, the is formed in the second groove that the fourth lane structure and second interstitital texture are formed
Five-channel structure；
Remove second mask layer；
As shown in figure 21, second insulation connecting layer surface is planarized.
Correspondingly, this three the embodiment of the invention also provides a kind of three-dimensional storage formed using above-mentioned forming method
Tieing up memory includes:
Substrate, the substrate surface are formed with the first stack layer and the first insulation connecting layer, and first stack layer is by more
A staggeredly oxide layer of superposition and nitration case are constituted；
Through first stack layer and first insulation connecting layer, and first extended in the substrate surface is led to
Hole；
It is formed in the first passage structure for the substrate surface that first through hole exposes to the open air；
It is formed in the first functional layer of the first through hole side wall；
It is sequentially formed in the second channel structure and of the first functional layer side wall and the first passage body structure surface
The surface of one interstitital texture, the second channel structure and first interstitital texture is lower than the first insulation connecting layer table
Face；
The first groove being formed in first insulation connecting layer, the projection of first groove on the substrate are complete
The projection of first through hole described in all standing on the substrate；
The third channel structure being formed in first groove, the third channel structure and the second channel structure
It is in contact；
The third channel structure is sequentially formed in away from the second stack layer of the substrate side and the second insulation connection
Layer, second stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；
Through second stack layer and second insulation connecting layer, and extend in the third channel body structure surface
The second through-hole, second through-hole on the substrate projection with the projection of the first through hole on the substrate at least
Part is overlapping；
It is formed in the second functional layer of second through-hole side wall；
It is sequentially formed in the fourth lane structure and of the second functional layer side wall and second via bottoms surface
Two interstitital textures, the surface of the fourth lane structure are higher than the surface of second interstitital texture；
The Five-channel knot being formed in the second groove that the fourth lane structure and second interstitital texture are formed
Structure, the Five-channel structure are in contact with the fourth lane structure.
From the foregoing, it will be observed that the forming method of the channel pore structure of three-dimensional storage provided by the embodiment of the present invention, passes through
Through-hole formation process greatly reduces twice come the channel pore structure formed in the three-dimensional storage for one through-hole and the second through-hole
The technology difficulty and cost of the channel pore structure, solve under identical bore, and technique caused by through-hole depth-to-width ratio is excessive is difficult
The big and at high cost problem of degree, while also reducing the manufacture craft difficulty and cost of the three-dimensional storage.
In addition, the embodiment of the invention also provides the forming method of channel pore structure in another three-dimensional storage, it is special
Sign is that the three-dimensional storage includes along first area, second area and the third region of word-line direction arrangement, wherein institute
It states first area and is used to form channel pore structure, the third region is used to form insulation ring structure, this method comprises:
S201: as shown in figure 22, substrate 1 is provided, 1 surface of substrate is formed with the first stack layer 2 and the first insulation connects
Layer 3 is connect, first stack layer 2 is made of the multiple staggeredly oxide layer of superposition and nitration cases.Optionally, first stack layer
Oxide layer and the number of plies summation of nitration case are not less than 64 in 2, but the present invention is to this and without limitation, specifically depends on the circumstances.
Specifically, in one embodiment of the invention, first insulation connecting layer 3 is silicon oxide layer, but of the invention
To this and without limitation, as long as guaranteeing the material of first insulation connecting layer 3 and nitration case described in first stack layer 2
Difference, and there is insulation function.
It should be noted that on the basis of the above embodiments, in one embodiment of the invention, this method is also wrapped
It includes:
The first mask layer 4 is formed on 3 surface of the first insulation connecting layer, optionally, first mask layer 4 includes position
Nitration case in 3 surface of the first insulation connecting layer and the oxide layer positioned at the nitridation layer surface.
S202: continue as shown in figure 22, in the first area 100 (i.e. Channel hole), the second area 200
(i.e. SS dummy hole) and the third region 300 (i.e. TAC barrier) is formed completely through first stack layer 2
With first insulation connecting layer 3, and the first through hole 5 in 1 surface of substrate is extended to.It should be noted that vertical
In in 1 surface direction of substrate, the first through hole depth at the third region 300 is greater than the first area 100
The depth of the first through hole at place.
It should also be noted that, when 3 surface of the first insulation connecting layer is formed with the first mask layer 4, the is being formed
It further include the etching to first mask layer 4 when one through-hole.
S203: as shown in figure 23, first passage structure 6 is formed on 1 surface of the substrate that first through hole 5 exposes to the open air.
S204: the first functional layer is formed in 5 side wall of first through hole.
Specifically, in one embodiment of the invention, forming the first functional layer in the first through hole side wall includes:
As shown in figure 24, the first tunnelling is formed on the surface of the side wall of the first through hole 5 and the first passage structure 6
Layer 7, for generating charge, optionally, first tunnel layer 7 is oxide layer, and formation process is depositing operation；
The first accumulation layer 8 is formed on 7 surface of the first tunnel layer, for storing charge, optionally, first storage
Layer 8 is nitration case, and formation process is depositing operation；
The first barrier layer 9 is formed on 8 surface of the first accumulation layer, for stopping the charge in first accumulation layer 8
Outflow, optionally, first barrier layer 9 are oxide layer, and formation process is depositing operation；
As shown in figure 25, the first protective layer 10 is formed on 9 surface of the first barrier layer, for avoiding described first from stopping
Layer 9 is damaged in subsequent removal technique, and optionally, first protective layer 10 is amorphous silicon layer, and formation process is deposition
Technique；
Continue as shown in figure 25, to remove first protective layer 10, the first barrier layer 9, first accumulation layer 8 and described
First tunnel layer 7 is located at the part on 6 surface of first passage structure, forms the first functional layer, optionally, the removal technique
For etching technics and cleaning process.
S205: the first functional layer side wall and the first passage body structure surface sequentially form second channel structure and
The surface of first interstitital texture, the second channel structure and first interstitital texture is lower than first insulation connecting layer 3
Surface.
Specifically, in one embodiment of the invention, in the first functional layer side wall and the first passage structure
Surface sequentially forms second channel structure and the first interstitital texture, the table of the second channel structure and first interstitital texture
Face includes: lower than 3 surface of the first insulation connecting layer
As shown in figure 26, it is formed and covers 10 side wall of the first protective layer, 5 bottom of the first through hole and the first insulation company
The second channel layer 11 on 3 surface of layer is connect, optionally, the second channel layer 11 is amorphous silicon layer, and formation process is depositing operation；
As shown in figure 27, the first filled layer 12 for covering the second channel layer 11 is formed, optionally, first filling
Layer 12 is oxide layer, and formation process is depositing operation；
As shown in figure 28, part first filled layer 12 is removed, so that 12 surface of the first filled layer is lower than described
First insulation connecting layer, 3 surface forms the first interstitital texture, and optionally, the removal technique is etching technics；
As shown in figure 29, the part second channel layer 11 is removed, so that 11 surface of second channel layer is lower than described
First insulation connecting layer 3 forms second channel structure, and optionally, the removal technique is etching technics.
It should be noted that in embodiments of the present invention, the upper surface of the second channel structure can be higher than described the
The upper surface of one stack layer 2, can also be lower than the upper surface of first stack layer 2, the present invention to this and without limitation, as long as
Guarantee upper surface of the upper surface not less than top layer oxide layer in first stack layer 2 of the second channel structure.It can
Choosing, the upper surface of the second channel structure is concordant with the upper surface of top layer oxide layer in first stack layer 2.
S206: the first groove is formed in first insulation connecting layer 3, first groove is in the substrate 1
Projection of the first through hole in the substrate 1 is completely covered in projection.
Specifically, in one embodiment of the invention, forming the first groove, institute in first insulation connecting layer 3
It states projection of first groove in the substrate 1 projection of the first through hole in the substrate 1 is completely covered and include:
Part first insulation connecting layer 3 is removed, is formed through described first absolutely in first insulation connecting layer 3
The first through hole is completely covered described in first groove of edge articulamentum 3, projection of first groove in the substrate 1
Projection in substrate 1.Optionally, projected area of first groove in the substrate 1 is greater than the first through hole in institute
State the projected area in substrate 1.
In another embodiment of the present invention, when 3 surface of the first insulation connecting layer is formed with the first mask layer 4
When, the first groove is formed in first insulation connecting layer 3, projection of first groove in the substrate 1 is covered completely
Covering projection of the first through hole in the substrate 1 includes:
As shown in figure 30, first mask layer 4 is removed；
As shown in figure 31,3 surface of the first insulation connecting layer is planarized；
Continue as shown in figure 31, to remove part first insulation connecting layer 3, the shape in first insulation connecting layer 3
At the first groove 13 for running through first insulation connecting layer 3, projection of first groove 13 in the substrate 1 is covered completely
Cover projection of the first through hole 5 in the substrate 1.
S207: as shown in figure 32, third channel structure 14, the third channel structure are formed in first groove 13
14 are in contact with the second channel structure.
S208: as shown in figure 33, the second stacking is sequentially formed away from 1 side of substrate in the third channel structure 14
Layer 15 and the second insulation connecting layer 16, second stack layer 15 are made of the multiple staggeredly oxide layer of superposition and nitration cases.It can
Choosing, oxide layer and the number of plies summation of nitration case are not less than 64 in second stack layer 15, but the present invention does not limit this
It is fixed, specifically depend on the circumstances.
Specifically, in one embodiment of the invention, second insulation connecting layer 16 is silicon oxide layer, but of the invention
To this and without limitation, as long as guaranteeing the material of nitration case described in second insulation connecting layer and second stack layer not
Together, and there is insulation function.
It should be noted that on the basis of the above embodiments, in one embodiment of the invention, this method is also wrapped
It includes:
The second mask layer 17 is formed on 16 surface of the second insulation connecting layer, optionally, second mask layer 17 wraps
Include the nitration case positioned at second insulation connecting layer surface and the oxide layer positioned at the nitridation layer surface.
S209: as shown in figure 34, the first area, the second area and the third region formed completely through
Second stack layer 15 and second insulation connecting layer 16, and extend in 14 surface of third channel structure second
Through-hole 18, projection and the first through hole 5 projection on the substrate 1 of second through-hole 18 in the substrate 1 are extremely
Small part is overlapping.
It should be noted that the third channel structure in the third region may be by second through-hole when concrete technology
To this and without limitation completely through, the present invention, as long as guaranteeing the third channel structure of the first area not by described
Two through-holes completely through.
Specifically, in one embodiment of the invention, being formed completely through second stack layer and described second absolutely
Edge articulamentum, and the second through-hole extended in the third channel body structure surface includes:
Second stack layer and second insulation connecting layer are performed etching, in second stack layer and described
It is formed in two insulation connecting layers and runs through second stack layer and second insulation connecting layer, and extend to the third channel
The second through-hole in body structure surface；Second hole is cleaned.
It should be noted that in embodiments of the present invention, second through-hole can extend to the third channel structure
Surface can also extend in the third channel body structure surface, the present invention to this and without limitation, as long as guaranteeing to be subsequently formed
Fourth lane structure can directly be contacted with the third channel structure.
On the basis of the above embodiments, in one embodiment of the invention, when second insulation connecting layer surface
It further include the etching to second mask layer when forming the second through-hole when being formed with the second mask layer.It needs to illustrate
It is, in embodiments of the present invention, boundary line and first mask of second mask layer towards second through-hole side
Layer is not more than 15nm towards the distance between boundary line of the first through hole side is maximum.
S2010: the second functional layer is formed in second through-hole side wall.
Specifically, in one embodiment of the invention, forming the second functional layer in second through-hole side wall includes:
As shown in figure 35, the second tunnel is formed on the surface of the side wall of second through-hole 18 and the second channel structure 14
Layer 19 is worn, for generating charge, optionally, second tunnel layer 19 is oxide layer, and formation process is depositing operation；
The second accumulation layer 20 is formed on 19 surface of the second tunnel layer, for storing charge, optionally, described second is deposited
Reservoir 20 is nitration case, and formation process is depositing operation；
The second barrier layer 21 is formed on 20 surface of the second accumulation layer, for stopping the electricity in second accumulation layer 20
Lotus outflow, optionally, second barrier layer 21 is oxide layer, and formation process is depositing operation；
As shown in figure 36, the second protective layer 22 is formed on 21 surface of the second barrier layer, for protecting second resistance
Barrier 21 is not damaged in subsequent removal technique, and optionally, second protective layer 22 is amorphous silicon layer, and formation process is
Depositing operation；
Continue as shown in figure 36, to remove second protective layer 22, the second barrier layer 21, second accumulation layer 20 and institute
The part that the second tunnel layer 19 is located at 14 surface of second channel structure is stated, the second functional layer, optionally, the removal are formed
Technique is etching technics and cleaning process.
S2011: in the first area, the corresponding second functional layer side wall and second via bottoms form the
Four-way structure, and is formed in the first area, corresponding second through-hole of the second area and the third region
Two interstitital textures, the surface of the fourth lane structure are higher than the surface of second interstitital texture.
Specifically, in one embodiment of the invention, in the corresponding second functional layer side wall in the first area
Fourth lane structure is formed with second via bottoms, and in the first area, the second area and the third area
The second interstitital texture is formed in corresponding second through-hole in domain, the surface of the fourth lane structure is higher than second interstitital texture
Surface include:
As shown in figure 37, it is formed in the first area, second area and the second area and covers second function
The fourth lane layer 23 of layer side wall, second via bottoms and second insulation connecting layer surface；
As shown in figure 38, it is formed in the first area, second area and the second area and covers the fourth lane
The third filled layer 24 of layer 23 has the air gap in the third filled layer 24；
As shown in figure 39, third mask layer 25 is formed on the surface of the corresponding first area of the third filled layer 24；
It is exposure mask with the third mask layer 25, removes the third filled layer 24 and be located at the second area and described
The part in three regions；
As shown in figure 40, the third mask layer 25 is removed；
Be located at the part of the first area as exposure mask using the third filled layer 24, removal be located at the second area and
The fourth lane layer 23 in the third region；
As shown in figure 41, the 4th is formed in the second function layer surface for being located at the second area and the third region to fill out
Layer 27 is filled, the filling capacity of the 4th filled layer 27 is better than the third filled layer 24, i.e., described in same removal technique
The removal rate of 4th filled layer is less than the removal rate of the third filled layer；
As shown in figure 42, removal is located at the third filled layer 24 on 23 surface of fourth lane layer of the first area；
As shown in figure 43, second is formed in the second through-hole of the first area, second area and the third region
Filled layer 29；
As shown in figure 44, part second filled layer 29 is removed, makes the surface of second filled layer 29 lower than described
The surface of second insulation connecting layer 16 forms the second interstitital texture；
The part that the fourth lane layer 23 is located at 16 surface of the second insulation connecting layer is removed, form fourth lane
Structure, the surface of the fourth lane structure are higher than the surface of second interstitital texture.
S2012: the 5th is formed in the second groove that the fourth lane structure and second interstitital texture are formed and is led to
Road structure, the Five-channel structure are in contact with the fourth lane structure.
Specifically, in one embodiment of the invention, when second insulation connecting layer surface is formed with the second exposure mask
When layer, Five-channel structure packet is formed in the second groove that the fourth lane structure and second interstitital texture are formed
It includes:
As shown in figure 45, the is formed in the second groove that the fourth lane structure and second interstitital texture are formed
Five-channel structure 30；
Remove second mask layer；
As shown in figure 46,16 surface of the second insulation connecting layer is planarized.
Correspondingly, the three-dimensional storage includes along wordline side the embodiment of the invention also provides a kind of three-dimensional storage
To the first area of arrangement, second area and third region, wherein the first area is used to form channel pore structure, described
Third region is used to form insulation ring structure, and edge includes: perpendicular to the three-dimensional storage surface direction
Substrate, the substrate surface are formed with the first stack layer and the first insulation connecting layer, and first stack layer is by more
A staggeredly oxide layer of superposition and nitration case are constituted；
Positioned at the first area, the second area and the third region, completely through first stack layer and
First insulation connecting layer, and extend to the first through hole in the substrate surface；
It is formed in the first passage structure for the substrate surface that first through hole exposes to the open air；
It is formed in the first functional layer of the first through hole side wall；
It is sequentially formed at the second channel structure and of the first functional layer side wall and the first passage body structure surface
The surface of one interstitital texture, the second channel structure and first interstitital texture is lower than the first insulation connecting layer table
Face；
The first groove being formed in first insulation connecting layer, the projection of first groove on the substrate are complete
The projection of first through hole described in all standing on the substrate；
The third channel structure being formed in first groove, the third channel structure and the second channel structure
It is in contact；
The third channel structure is sequentially formed at away from the second stack layer of the substrate side and the second insulation connection
Layer, second stack layer are made of the multiple staggeredly oxide layer of superposition and nitration cases；
In the first area, the second area and the third region, completely through second stack layer and institute
The second insulation connecting layer is stated, and extends to the second through-hole in the third channel body structure surface, second through-hole is described
Projection and projection of the first through hole in the substrate 1 in substrate is at least partly overlapping；
It is formed in the second functional layer of second through-hole side wall；
It is formed in the four-way of the first area corresponding second functional layer side wall and second via bottoms
Road structure, and it is formed in the first area, in corresponding second through-hole of the second area and the third region
Two interstitital textures, the surface of the fourth lane structure are higher than the surface of second interstitital texture；
The Five-channel knot being formed in the second groove that the fourth lane structure and second interstitital texture are formed
Structure, the Five-channel structure are in contact with the fourth lane structure.
From the foregoing, it will be observed that in three-dimensional storage provided by the embodiment of the present invention channel pore structure forming method, pass through
Through-hole formation process greatly reduces twice come the channel pore structure formed in the three-dimensional storage for one through-hole and the second through-hole
The technology difficulty and cost of the channel pore structure, solve under identical bore, and technique caused by through-hole depth-to-width ratio is excessive is difficult
Degree with problem at high cost, reduces the formation process difficulty and cost of the three-dimensional storage greatly.
Moreover, in three-dimensional storage provided by the embodiment of the present invention channel pore structure forming method, the four-way
Road structure exists only in the first area, may be not present in the first area, so that in the three-dimensional storage,
Fifth hole structure described in the first area is electrically connected with the first passage structure, and the 5th is logical described in the third region
Road structure is electrically insulated with the first passage structure, thus when being applied to the three-dimensional storage with dead ring, it can be in institute
It states and forms insulation ring structure in the third region while first area forms channel pore structure, simple process, cost is relatively low.
Various pieces are described in a progressive manner in this specification, and what each some importance illustrated is and other parts
Difference, same and similar part may refer to each other between various pieces.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to embodiment illustrated herein, and is to fit to consistent with the principles and novel features disclosed in this article
Widest scope.
Claims (12)
1. the forming method of channel pore structure in a kind of three-dimensional storage, which is characterized in that this method comprises:
Substrate is provided, the substrate surface is formed with the first stack layer and the first insulation connecting layer, and first stack layer is by more
A staggeredly oxide layer of superposition and nitration case are constituted；
Formed completely through first stack layer and first insulation connecting layer, and extend in the substrate surface the
One through-hole；
First passage structure is formed in the substrate surface that first through hole exposes to the open air；
The first functional layer is formed in the first through hole side wall；
Second channel structure and the first filling are sequentially formed in the first functional layer side wall and the first passage body structure surface
The surface of structure, the second channel structure and first interstitital texture is lower than first insulation connecting layer surface；
The first groove is formed in first insulation connecting layer, the projection of first groove on the substrate is completely covered
The projection of the first through hole on the substrate；
Third channel structure is formed in first groove, the third channel structure connects with the second channel structure
Touching, the third channel structure protrude from first functional layer along the radially outward direction of the first through hole；
The second stack layer and the second insulation connecting layer are sequentially formed away from the substrate side in the third channel structure, it is described
Second stack layer is made of the multiple staggeredly oxide layer of superposition and nitration cases；
It is formed completely through second stack layer and second insulation connecting layer, and extends to the third channel structure table
The second through-hole in face, the projection and the projection of the first through hole on the substrate of second through-hole on the substrate
It is at least partly overlapping；
The second functional layer is formed in second through-hole side wall；
Fourth lane structure and the second filling are sequentially formed in the second functional layer side wall and second via bottoms surface
Structure, the surface of second interstitital texture are lower than the surface of the fourth lane structure；
Five-channel structure is formed in the second groove that the fourth lane structure and second interstitital texture are formed, it is described
Five-channel structure is in contact with the fourth lane structure.
2. forming method according to claim 1, which is characterized in that form the first functional layer in the first through hole side wall
Include:
The first tunnel layer is formed in the side wall of the first through hole and the surface of the first passage structure, for generating charge；
The first accumulation layer is formed in the first tunnelling layer surface, for storing charge；
The first barrier layer is formed in the first storage layer surface, for stopping the charge in first accumulation layer to flow out；
The first protective layer is formed in first barrier layer surface, for protecting first barrier layer in subsequent removal technique
It is damaged；
First protective layer, the first barrier layer, first accumulation layer and first tunnel layer are removed positioned at described first
The part on channel design surface forms the first functional layer.
3. forming method according to claim 1, which is characterized in that lead in the first functional layer side wall and described first
Road body structure surface sequentially forms second channel structure and the first interstitital texture, the second channel structure and the first filling knot
The surface of structure includes: lower than first insulation connecting layer surface
Form the second channel for covering the first protective layer side wall, the first passage structure and the first insulation connecting layer surface
Layer；
Form the first filled layer for covering the second channel layer；
Part first filled layer is removed, so that the first filling layer surface is lower than first insulation connecting layer surface,
Form the first interstitital texture；
The part second channel layer is removed, so that the second channel layer surface is lower than first insulation connecting layer, is formed
Second channel structure.
4. forming method according to claim 1, which is characterized in that this method further include: in the first insulation connection
Layer surface forms the first mask layer.
5. forming method according to claim 4, which is characterized in that it is recessed to form first in first insulation connecting layer
Slot, the projection of first groove on the substrate are completely covered the projection of the first through hole on the substrate and include:
Remove first mask layer；
Planarize first insulation connecting layer surface；
Part first insulation connecting layer is removed, is formed in first insulation connecting layer through the first insulation connection
The first through hole is completely covered on the substrate in first groove of layer, the projection of first groove on the substrate
Projection.
6. forming method according to claim 1, which is characterized in that lead in the second functional layer side wall and described second
Hole bottom sequentially forms fourth lane structure and the second interstitital texture, the fourth lane structure and second interstitital texture
Surface includes: lower than second insulation connecting layer surface
Form the fourth lane for covering the second protective layer side wall, second via bottoms and the second insulation connecting layer surface
Layer；
Form the second filled layer for covering the fourth lane layer；
Part second filled layer is removed, so that the second filling layer surface is lower than second insulation connecting layer surface,
Form the second interstitital texture；
Two parts that the fourth lane layer is located at second insulation connecting layer surface are removed, fourth lane structure, institute are formed
The surface for stating fourth lane structure is higher than the surface of second interstitital texture.
7. a kind of three-dimensional storage characterized by comprising
Substrate, the substrate surface are formed with the first stack layer and the first insulation connecting layer, and first stack layer is by multiple friendships
The oxide layer and nitration case of mistake superposition are constituted；
Through first stack layer and first insulation connecting layer, and extend to the first through hole in the substrate surface；
It is formed in the first passage structure for the substrate surface that first through hole exposes to the open air；
It is formed in the first functional layer of the first through hole side wall；
The second channel structure and first for being sequentially formed in the first functional layer side wall and the first passage body structure surface are filled out
Fill structure, the surface of the second channel structure and first interstitital texture is lower than first insulation connecting layer surface；
The first groove being formed in first insulation connecting layer, the projection of first groove on the substrate are covered completely
Cover the projection of the first through hole on the substrate；
The third channel structure being formed in first groove, the third channel structure connect with the second channel structure
Touching, the third channel structure protrude from first functional layer along the radially outward direction of the first through hole；
It is sequentially formed in the second stack layer and the second insulation connecting layer that the third channel structure deviates from the substrate side, institute
The second stack layer is stated to be made of the multiple staggeredly oxide layer of superposition and nitration cases；
Through second stack layer and second insulation connecting layer, and extend in the third channel body structure surface
Two through-holes, second through-hole on the substrate projection with the projection of the first through hole on the substrate at least partly
It is overlapping；
It is formed in the second functional layer of second through-hole side wall；
The fourth lane structure and second for being sequentially formed in the second functional layer side wall and second via bottoms surface are filled out
Structure is filled, the surface of the fourth lane structure is higher than the surface of second interstitital texture；
The Five-channel structure being formed in the second groove that the fourth lane structure and second interstitital texture are formed, institute
Five-channel structure is stated to be in contact with the fourth lane structure.
8. the forming method of channel pore structure in a kind of three-dimensional storage, which is characterized in that the three-dimensional storage includes along word
First area, second area and the third region of line direction arrangement, wherein the first area is used to form channel pore structure,
The third region is used to form insulation ring structure, this method comprises:
Substrate is provided, the substrate surface is formed with the first stack layer and the first insulation connecting layer, and first stack layer is by more
A staggeredly oxide layer of superposition and nitration case are constituted；
It is formed in the first area, the second area and the third region completely through first stack layer and described
First insulation connecting layer, and extend to the first through hole in the substrate surface；
First passage structure is formed in the substrate surface that first through hole exposes to the open air；
The first functional layer is formed in the first through hole side wall；
Second channel structure and the first filling are sequentially formed in the first functional layer side wall and the first passage body structure surface
The surface of structure, the second channel structure and first interstitital texture is lower than first insulation connecting layer surface；
The first groove is formed in first insulation connecting layer, the projection of first groove on the substrate is completely covered
The projection of the first through hole on the substrate；
Third channel structure is formed in first groove, the third channel structure connects with the second channel structure
Touching, the third channel structure protrude from first functional layer along the radially outward direction of the first through hole；
The second stack layer and the second insulation connecting layer are sequentially formed away from the substrate side in the third channel structure, it is described
Second stack layer is made of the multiple staggeredly oxide layer of superposition and nitration cases；
It is formed in the first area, the second area and the third region completely through second stack layer and described
Second insulation connecting layer, and the second through-hole in the third channel body structure surface is extended to, second through-hole is in the base
Projection and the projection of the first through hole on the substrate on bottom is at least partly overlapping；
The second functional layer is formed in second through-hole side wall；
In the first area, the corresponding second functional layer side wall and second via bottoms form fourth lane structure,
And the second interstitital texture is formed in the first area, corresponding second through-hole of the second area and the third region,
The surface of the fourth lane structure is higher than the surface of second interstitital texture；
Five-channel structure is formed in the second groove that the fourth lane structure and second interstitital texture are formed, it is described
Five-channel structure is in contact with the fourth lane structure.
9. forming method according to claim 8, which is characterized in that in corresponding second function in the first area
Layer side wall and second via bottoms form fourth lane structure, and in the first area, the second area and described
The second interstitital texture is formed in corresponding second through-hole in third region, the surface of the fourth lane structure is higher than described second and fills out
The surface for filling structure includes:
It is formed in the first area, second area and the second area and covers the second functional layer side wall, described second
The fourth lane layer of via bottoms and second insulation connecting layer surface；
The third filled layer for covering the fourth lane layer is formed in the first area, second area and the second area,
There is the air gap in the third filled layer；
Third mask layer is formed on the surface that the third filled layer corresponds to the first area；
Using the third mask layer as exposure mask, removes the third filled layer and be located at the second area and the third region
Part；
Remove the third mask layer；
It is located at the part of the first area as exposure mask using the third filled layer, removal is located at the second area and described the
The fourth lane layer in three regions；
The 4th filled layer is formed in the second function layer surface for being located at the second area and the third region, the described 4th fills out
The filling capacity for filling layer is better than the third filled layer；
Removal is located at the third filled layer of the fourth lane layer surface of the first area；
The second filled layer is formed in the second through-hole of the first area, second area and the third region；
Part second filled layer is removed, the surface of second filled layer is made to be lower than the table of second insulation connecting layer
Face forms the second interstitital texture；
The part that the fourth lane layer is located at second insulation connecting layer surface is removed, fourth lane structure is formed, it is described
Fourth lane body structure surface is higher than second interstitital texture surface.
10. forming method according to claim 8, which is characterized in that form the first function in the first through hole side wall
Layer include:
The first tunnel layer is formed in the side wall of the first through hole and the surface of the first passage structure, for generating charge；
The first accumulation layer is formed in the first tunnelling layer surface, for storing charge；
The first barrier layer is formed in the first storage layer surface, for stopping the charge in first accumulation layer to flow out；
The first protective layer is formed in first barrier layer surface, for protecting first barrier layer in subsequent removal technique
It is damaged；
First protective layer, the first barrier layer, first accumulation layer and first tunnel layer are removed positioned at described first
The part on channel design surface forms the first functional layer.
11. forming method according to claim 8, which is characterized in that in the first functional layer side wall and described first
Channel design surface sequentially forms second channel structure and the first interstitital texture, the second channel structure and first filling
The surface of structure includes: lower than first insulation connecting layer surface
Form the second channel for covering the first protective layer side wall, the first passage structure and the first insulation connecting layer surface
Layer；
Form the first filled layer for covering the second channel layer；
Part first filled layer is removed, so that the first filling layer surface is lower than first insulation connecting layer surface,
Form the first interstitital texture；
The part second channel layer is removed, so that the second channel layer surface is lower than first insulation connecting layer, is formed
Second channel structure.
12. a kind of three-dimensional storage, which is characterized in that the three-dimensional storage include along word-line direction arrangement first area,
Second area and third region, wherein the first area is used to form channel pore structure, and the third region is used to form absolutely
Edge ring structure, edge include: perpendicular to the three-dimensional storage surface direction
Substrate, the substrate surface are formed with the first stack layer and the first insulation connecting layer, and first stack layer is by multiple friendships
The oxide layer and nitration case of mistake superposition are constituted；
In the first area, the second area and the third region, completely through first stack layer and described
One insulation connecting layer, and extend to the first through hole in the substrate surface；
It is formed in the first passage structure for the substrate surface that first through hole exposes to the open air；
It is formed in the first functional layer of the first through hole side wall；
The second channel structure and first for being sequentially formed at the first functional layer side wall and the first passage body structure surface are filled out
Fill structure, the surface of the second channel structure and first interstitital texture is lower than first insulation connecting layer surface；
The first groove being formed in first insulation connecting layer, the projection of first groove on the substrate are covered completely
Cover the projection of the first through hole on the substrate；
The third channel structure being formed in first groove, the third channel structure connect with the second channel structure
Touching, the third channel structure protrude from first functional layer along the radially outward direction of the first through hole；
It is sequentially formed at the second stack layer and the second insulation connecting layer that the third channel structure deviates from the substrate side, institute
The second stack layer is stated to be made of the multiple staggeredly oxide layer of superposition and nitration cases；
In the first area, the second area and the third region, completely through second stack layer and described
Two insulation connecting layers, and the second through-hole in the third channel body structure surface is extended to, second through-hole is in the substrate
On projection and the projection of the first through hole on the substrate it is at least partly overlapping；
It is formed in the second functional layer of second through-hole side wall；
It is formed in the fourth lane knot of the first area corresponding second functional layer side wall and second via bottoms
Structure, and be formed in the first area, second in corresponding second through-hole of the second area and the third region fill out
Structure is filled, the surface of the fourth lane structure is higher than the surface of second interstitital texture；
The Five-channel structure being formed in the second groove that the fourth lane structure and second interstitital texture are formed, institute
Five-channel structure is stated to be in contact with the fourth lane structure.
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| JP6978643B2 (en) | 2017-03-08 | 2021-12-08 | 長江存儲科技有限責任公司Yangtze Memory Technologies Co., Ltd. | Joint opening structure of 3D memory device and method for forming it |
| CN107611010A (en) * | 2017-08-31 | 2018-01-19 | 长江存储科技有限责任公司 | A kind of method for cleaning wafer |
| CN107611128B (en) * | 2017-08-31 | 2019-01-04 | 长江存储科技有限责任公司 | A kind of three-dimensional computer flash memory device and preparation method thereof and buffering layer manufacturing method thereof |
| CN107994030B (en) * | 2017-11-16 | 2019-02-22 | 长江存储科技有限责任公司 | A kind of 3D nand flash memory preparation method stacked based on oxide-graphene film and flash memory |
| JP2019165089A (en) * | 2018-03-19 | 2019-09-26 | 東芝メモリ株式会社 | Semiconductor device |
| WO2019200561A1 (en) | 2018-04-18 | 2019-10-24 | Yangtze Memory Technologies Co., Ltd. | Method for forming channel hole plug of three-dimensional memory device |
| CN109196645B (en) * | 2018-06-08 | 2019-09-10 | 长江存储科技有限责任公司 | The method for being used to form the dual stack channel pore structure of three-dimensional storage part |
| CN109003986A (en) * | 2018-08-07 | 2018-12-14 | 长江存储科技有限责任公司 | Memory construction and forming method thereof |
| CN109417072B (en) | 2018-09-13 | 2020-01-14 | 长江存储科技有限责任公司 | Novel 3D NAND memory device and method of forming the same |
| CN109417075B (en) * | 2018-09-20 | 2020-06-26 | 长江存储科技有限责任公司 | Multi-stacked-layer three-dimensional memory device |
| WO2020082358A1 (en) * | 2018-10-26 | 2020-04-30 | Yangtze Memory Technologies Co., Ltd. | Structure of 3d nand memory device and method of forming the same |
| CN109545794A (en) * | 2018-11-02 | 2019-03-29 | 长江存储科技有限责任公司 | 3D memory device and its manufacturing method |
| CN109686738A (en) * | 2018-11-21 | 2019-04-26 | 长江存储科技有限责任公司 | Form the method and three-dimensional storage of three-dimensional storage |
| WO2020103082A1 (en) * | 2018-11-22 | 2020-05-28 | Yangtze Memory Technologies Co., Ltd. | Three-dimensional memory devices and fabricating methods thereof |
| CN109524410B (en) * | 2018-11-23 | 2020-07-28 | 长江存储科技有限责任公司 | Method for forming three-dimensional memory |
| US10784282B2 (en) | 2018-12-22 | 2020-09-22 | Xcelsis Corporation | 3D NAND—high aspect ratio strings and channels |
| CN109904171B (en) * | 2019-02-14 | 2021-10-19 | 长江存储科技有限责任公司 | Three-dimensional memory and manufacturing method thereof |
| KR102670304B1 (en) * | 2020-01-17 | 2024-05-30 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | Double-deck 3D NAND memory and its formation method |
| CN112614852A (en) * | 2020-12-01 | 2021-04-06 | 长江存储科技有限责任公司 | 3D NAND memory, manufacturing method thereof and preparation method of memory channel structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100109065A1 (en) * | 2008-11-06 | 2010-05-06 | Jin-Yong Oh | Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devices |
| US20110151667A1 (en) * | 2009-12-18 | 2011-06-23 | Sung-Min Hwang | Methods of Manufacturing Three-Dimensional Semiconductor Devices and Related Devices |
| US20150236038A1 (en) * | 2014-02-20 | 2015-08-20 | Sandisk Technologies Inc. | Multilevel memory stack structure and methods of manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105374826B (en) * | 2015-10-20 | 2019-01-15 | 中国科学院微电子研究所 | Three-dimensional semiconductor device and method for manufacturing the same |
-
2017
- 2017-03-08 CN CN201811524018.6A patent/CN109671667B/en active Active
- 2017-03-08 CN CN201710134782.1A patent/CN106920772B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100109065A1 (en) * | 2008-11-06 | 2010-05-06 | Jin-Yong Oh | Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devices |
| US20110151667A1 (en) * | 2009-12-18 | 2011-06-23 | Sung-Min Hwang | Methods of Manufacturing Three-Dimensional Semiconductor Devices and Related Devices |
| US20150236038A1 (en) * | 2014-02-20 | 2015-08-20 | Sandisk Technologies Inc. | Multilevel memory stack structure and methods of manufacturing the same |
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