CN109671637A - A kind of wafer detecting apparatus and method - Google Patents
A kind of wafer detecting apparatus and method Download PDFInfo
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- CN109671637A CN109671637A CN201811327524.6A CN201811327524A CN109671637A CN 109671637 A CN109671637 A CN 109671637A CN 201811327524 A CN201811327524 A CN 201811327524A CN 109671637 A CN109671637 A CN 109671637A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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Abstract
This application provides a kind of wafer detecting apparatus and method, the detection device is applied in chamber, comprising: sensor module and judgment module；The top of the chamber, and the multiple sensor module along the circumferential direction concentric locatings is arranged in, for obtaining wafer to be detected in the radial position information of the different detection zones of the circumference in multiple sensor modules；The judgment module, for judging whether the wafer to be detected shifts, influencing subsequent process flow to solve the problem of that wafer current shifts according to the radial position information and preset standard radial position information.
Description
Technical field
This application involves technical field of semiconductors, more particularly to a kind of wafer detecting apparatus and method.
Background technique
In physical vapour deposition (PVD) PVD process process, location is very crucial in the chamber for wafer.If wafer exists
Positional shift occurs in chamber, is easy to influence the stability of wafer in process flow.
Wafer executes technique in chamber and rises as shown in Figure 1, needing that wafer 1 is transmitted to 2 bands in chamber by manipulator
On the bracket 3 for dropping function, then by between the lifting action of pedestal hoisting mechanism 4, tray elevator character structure 5 and manipulator
Cooperation, will in wafer film releasing to pedestal 6, complete wafer position film releasing prepare.
It before technique starts, generally requires and is inflated by inflating port 8, to meet specific operation pressure.Technique terminates
Afterwards, corresponding also to need to carry out to vacuumize by bleeding point 9 and reversed lifting action.Therefore, if pedestal hoisting mechanism
Or there is the problems such as installing not in place, thermal deformation and aging in tray elevator character structure, it is easy to cause lifting action unstable
And then wafer position is made to shift.And for high-pressure process, when inflation and pumping before and after technique, can generate larger air-flow,
It easily causes wafer position to shift, to influence the stability of process flow.
The scheme of the prior art is the increase offset detection sensor between transmission chamber and transmission platform, carries out brilliant
Circle position detection, that is to say, that just detect whether wafer position deviates when only to wafer into and out of transmission chamber, and can not be to biography
The defeated indoor wafer position offset of chamber is judged, if biggish offset occurs in transmission chamber for wafer, is taken subsequent
When piece acts, it is easy to cause crystal round fringes to occur damaged, to influence subsequent process flow.
Summary of the invention
This application provides a kind of wafer detecting apparatus and methods, are shifted with solving wafer current, influence subsequent
The problem of process flow.
To solve the above-mentioned problems, this application discloses a kind of wafer detecting apparatus, the detection device is applied to chamber
It is interior, comprising: sensor module and judgment module；
The top of the chamber is arranged in multiple sensor modules, and multiple sensor modules are circumferentially
Direction concentric locating, for obtaining wafer to be detected in the radial position information of the different detection zones of the circumference；
The judgment module, for judging institute according to the radial position information and preset standard radial location information
State whether wafer to be detected shifts in the chamber.
Optionally, the detection device further include: annular structural part, slide rail, scale and locking device；
The upper cover of the chamber is arranged in the annular structural part；
The slide rail is arranged on the annular structural part, and the slide rail is radially extended along the circumference；
The sensor module is arranged on the corresponding slide rail, and can be adjusted along the slide rail；
The scale is parallel to the slide rail setting or is arranged on the slide rail, for demarcating the sensing
The radial position information of device assembly；
The locking device, for locking the sensor module after the sensor module is adjusted to calibration position.
Optionally, the sensor module includes at least one sensor of the arranged radially along the circumference；Each institute
It states sensor to be arranged on the slide rail, and each sensor is set to corresponding first calibration position, is used for
Obtain the first detection information immediately below first calibration position, first detection information that each sensor obtains
Form the radial position information.
Optionally, the sensor module includes: outer coil sensor and interior coil sensor；
The outer coil sensor and the interior coil sensor and are arranged and lead in the sliding along the arranged radially of the circumference
On rail；
The outer coil sensor is set to the second calibration position, for obtaining second immediately below second calibration position
Detection information；The interior coil sensor is set to third calibration position, for obtaining the immediately below third calibration position
Three detection informations；Second detection information and third detection information that the outer coil sensor and the interior coil sensor obtain
Form the radial position information.
Optionally, scale value is provided on the scale；The judgment module is also used to according to the radial position information
And the scale value corresponding to the calibration position judges the offset of the wafer to be detected.
Optionally, the sensor is reflective photoelectric sensor or correlation photoelectric sensor.
To solve the above-mentioned problems, this application discloses a kind of wafer detection method applied to the detection device, institutes
Stating wafer detection method includes:
Obtain radial position information of the wafer to be detected in each detection zone in chamber；
According to the radial position information and preset standard radial location information, judge the wafer to be detected described
Whether shift in chamber.
Optionally, described the step of obtaining radial position information of the wafer to be detected in each detection zone in chamber
Include:
First detection information of the sensor immediately below the first calibration position is obtained, according to the acquisition of each sensor
First detection information forms the radial position information；
It is described according to the radial position information and preset standard radial location information, judge that the wafer to be detected exists
The step of whether shifting in the chamber include:
It is described to be checked to judge according to scale value corresponding to the radial position information and first calibration position
Survey the offset of wafer；
The offset is compared with the first critical value of setting, the wafer to be detected is determined according to comparison result
Whether shift in the chamber.
Optionally, described the step of obtaining radial position information of the wafer to be detected in each detection zone in chamber
Further include:
Second detection information of the sensor immediately below the second calibration position is obtained, by first detection information and described
Radial position information is collectively formed in second detection information；
It is described according to the radial position information and preset standard radial location information, judge that the wafer to be detected exists
The step of whether shifting in the chamber further comprises:
It is described to be checked to judge according to scale value corresponding to the radial position information and second calibration position
Survey the offset of wafer；
Scale value corresponding to second calibration position is greater than scale value corresponding to first calibration position.
Optionally, described according to the radial position information and preset standard radial location information, judge described to be checked
Survey that the step of whether wafer shifts in the chamber further comprises:
The offset is compared with the second critical value of setting, when the offset is critical greater than second set
When value, then alarm；
Second critical value is greater than first critical value.
Compared with prior art, the application includes following advantages:
Firstly, the application wafer detecting apparatus is arranged in chamber, which includes: sensor module and judges mould
The top of the chamber is arranged in block, multiple sensor modules, and multiple sensor modules are along the circumferential direction same
Heart positioning, for obtaining wafer to be detected in the radial position information of the different detection zones of the circumference；The judgment module,
For judging whether the wafer to be detected occurs partially according to the radial position information and preset standard radial position information
It moves, this ensure that stability of the wafer to be detected in chamber indoor location, meanwhile, it, can also be with if wafer to be detected shifts
Judge the position to shift, is conducive to problem investigation.
Certainly, any product for implementing the application is not necessarily required to reach all the above advantage simultaneously.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the application transmission chamber in the prior art；
Fig. 2 is a kind of structural schematic diagram of wafer detecting apparatus described in the embodiment of the present application one；
Fig. 3 is wafer detecting apparatus described in the embodiment of the present application in the indoor partial enlargement diagram of chamber；
Fig. 4-a- is to the schematic diagram that Fig. 4-e is that wafer described in the embodiment of the present application shifts；
Fig. 5 is the correspondence diagram of the present embodiment wafer offset and sensor module；
Fig. 6 is a kind of flow chart of wafer detection method described in the present embodiment two；
Fig. 7 is a kind of flow chart of wafer detection method described in the present embodiment three；
Fig. 8 is a kind of flow chart of wafer detection method described in the present embodiment four.
Specific embodiment
In order to make the above objects, features, and advantages of the present application more apparent, with reference to the accompanying drawing and it is specific real
Applying mode, the present application will be further described in detail.
Embodiment one
Referring to Fig. 2, it illustrates a kind of structural schematic diagrams of wafer detecting apparatus described in the embodiment of the present application one, specific to wrap
Include: sensor module 1, annular structural part 2, wafer 3, the pedestal 4 of wafer, chamber 5, slide rail 6, scale, locking device,
Judgment module and upper cover 7.
The top of the chamber 5 is arranged in multiple sensor modules 1, and multiple sensor modules 1 are along circle
Circumferential direction concentric locating, for obtaining wafer to be detected in the radial position information of the different detection zones of the circumference.
The different location of sensor module calibration, corresponds to different detection zones, that is to say, that locating for sensor module
Position be corresponding different detection zone.
Sensor module for detecting wafer to be detected in the radial position information of the different detection zones of the circumference, when
Wafer to be detected shifts, and the output result of the sensor module on circumference will change at this time, i.e., wafer to be detected
It changes in the radial position information of circumference, the offset direction of wafer is judged according to the radial position information.
In actual use, sensor module can be evenly distributed on the circumference, irregular can also be distributed
On the circumference, this application is not particularly limited.
It should be noted that the sensor of the orientation mode of sensor module, orientation quantity and each azimuth distribution
The quantity of component can increase accordingly and reduce according to the needs of actual application environment and actual use, to realize to be checked
Survey the detection of the radial position information of wafer.
The judgment module, for according to the radial position information and preset standard radial position information, described in judgement
Whether wafer to be detected shifts.
Preset standard radial position information refers to that wafer is in normal place, i.e., when sensor module is concentric with chamber, passes
Radial position information detected by sensor component, that is to say, that the base position of sensor module detection radial position information.
Whether the radial position information that wafer to be detected is obtained by sensor module judges the radial position information
Deviate preset standard radial location information, if so, determining that wafer to be detected shifts, so that it is determined that wafer to be detected out
The radial position information to shift, in subsequent processing, the adjustable wafer to be detected prevents from deviating.
The upper cover 7 of the chamber 5 is arranged in the annular structural part 2, for the sensor module 1 in the same of circumference
Heart positioning, i.e., be arranged an annular structural part 2 in the upper cover 7 of chamber 5, and the ring structure 2 is concentric for sensor module 1
Positioning, and its center of circle is overlapped the annular structural part 2 with the center of chamber during installation.
The slide rail 6 is arranged on the annular structural part 2, and the slide rail 6 prolongs along the radial direction of the circumference
It stretches；The sensor module 1 is arranged on the corresponding slide rail 6, and can be adjusted along the slide rail 6.
The scale is parallel to the setting of slide rail 6 or is arranged on the slide rail 6, for demarcating the biography
The radial position information of sensor component 1.
The locking device, for locking the sensor module after the sensor module 1 is adjusted to calibration position
1。
One of implementation, the sensor module 1 include at least one biography of the arranged radially along the circumference
Sensor；Each sensor is arranged on the slide rail, and each sensor is set to corresponding first mark
Positioning is set, for obtaining the first detection information immediately below the first calibration position, each sensor obtain described the
One detection information forms the radial position information.
The sensor can be reflective photoelectric sensor or correlation photoelectric sensor, or other types
Sensor, this application is not particularly limited.
It when sensor is correlation photoelectric sensor, needs to punch on the base, and transmitter is installed in cavity top cover,
Cavity bottom installs receiver, realizes the detection to wafer.
Further, it lists in Fig. 3 and is arranged on annular structural part 2 on slide rail 6, and in the slide rail
4 sensor modules 1 are provided on 6, and 90 degree of distributions are presented in the sensor module 1 on annular structural part 2, wherein pass
Sensor component 1 is respectively sensor module A, sensor module B, sensor module C and sensor module D.
Wherein another implementation, each sensor module 1 include outer coil sensor and interior coil sensor, i.e. sensor
Component A includes outer ring sensors A 1 and inner ring sensors A 2, and sensor module B includes outer coil sensor B1 and interior coil sensor
B2, sensor module C include outer coil sensor C1 and interior coil sensor C2 and sensor module D includes outer coil sensor D1 and interior
Coil sensor D2.
The outer coil sensor and the interior coil sensor and are arranged and lead in the sliding along the arranged radially of the circumference
On rail；The outer coil sensor is set to the second calibration position, for obtaining the second inspection immediately below second calibration position
Measurement information；The interior coil sensor is set to third calibration position, for obtaining the third immediately below third calibration position
Detection information；Second detection information and third detection letter that the outer coil sensor and the interior coil sensor obtain
Breath forms the radial position information.
Further, scale value is provided on the scale；The judgment module is also used to be believed according to the radial position
The scale value corresponding to breath and the calibration position judges the offset of the wafer to be detected.
Wherein, calibration position includes that the first calibration position, the second calibration position and third demarcate position, in practical application
In, offset can be determined according to the scale value and radial position information of calibration position.
Referring to Fig. 3, it illustrates the application wafer detecting apparatus in the indoor partial enlarged view of chamber, with 4 sides in Fig. 2
For level sensor component, the working principle of application scheme is introduced.
In Fig. 3, outer coil sensor 10 and interior coil sensor 9 are mounted on slide rail 6, which is equipped with
Dimensional scales 13, wherein it is unit that scale, which generally uses mm, before the use, needs to determine that outer ring is passed according to deviation benchmark
The scale value of the installation site of sensor 10 and interior coil sensor 9 is locked after adjusting to corresponding 14 position of scale using locking device.
In actual use, the light that sensor module 1 issues by transparent window 12 reach the indoor wafer 3 of transmission cavity or
4 surface of pedestal returns to receiving end and is handled after reflection.When wafer is elevated the raising of mechanism 11 a to high position, wafer 3
It is detached from pedestal 4, the distance that pedestal and wafer reach sensor module at this time will be different, it is assumed that distance is respectively L1 and L2.If
The distance of reaction L for setting sensor module, meets L2≤L≤L1.Based on above-mentioned setting, when wafer is offset to sensor module light
When the position of road, light is reflected by wafer；Otherwise light is reflected through pedestal, sensor module level signal in the case of two kinds
Can be different, determine whether wafer position has been more than deviation post with this.
It is -1 when interior coil sensor scale is arranged by taking the 4 orientation dual sensors combination in Fig. 2 as an example, outer coil sensor mark
When degree is+2, by the state of outer coil sensor and the state of interior coil sensor, that is, offset direction and the offset of wafer can determine that
Size is measured, specific calculation is as follows.
Shown in Fig. 4-a, the position of wafer is 52, radius 150mm；The position of interior coil sensor is 53, and radius is
149mm, interior coil sensor are respectively A2 B2 C2 D2；The position of outer coil sensor is 51, radius 152mm, outer coil sensor
Respectively A1 B1 C1 D1, wherein outer coil sensor and interior coil sensor output digital quantity 1 indicate that ON, output digital quantity are 0
Indicate OFF.Wherein, digital quantity 1 is exported when light impinges upon on wafer, and digital quantity 0 is exported when light shines on the base, at this point,
A1/A2/B1/B2/C1/C2/D1/D2 is respectively (0,1,0,1,0,1,0,1), deviates (3 o'clock to the right below with wafer pass sheet mouth
Direction) for be introduced,
Start when wafer deviates to the right, due to deviating very little, at this time in coil sensor and outer coil sensor signal not
It changes, as shown in Fig. 4-b.
Wafer continuation deviates to the right, and wafer can be such that interior coil sensor B2 occurs first, and the wafer center of circle is moved to from 0 point at this time
01 point, A1/A2/B1/B2/C1/C2/D1/D2 be respectively (0,1,0,0,0,1,0,1), offset 150mm-149mm=1,
It can be seen that offset 1mm is first critical point of this programme, as shown in Fig. 4-c.
Wafer continuation deviates to the right, and wafer makes outer coil sensor D1 change, and the wafer center of circle is moved to from 01 point at this time
02 point, A1/A2/B1/B2/C1/C2/D1/D2 be respectively (0,1,0,0,0,1,1,1), offset 152mm-150mm=2,
It can be seen that offset 2mm is second critical point of this programme, as shown in Fig. 4-d.
Wafer continuation deviates to the right, and wafer makes inner ring sensors A 2 and C2 change, and the wafer center of circle is moved from 02 point at this time
The distance between it moving to 03 point, A1/A2/B1/B2/C1/C2/D1/D2 is respectively (0,0,0,0,0,0,1,1), 0 point to 03
It can be calculated by triangle, wherein bevel edge is 150mm, right-angle side 149mm, then 0 point to 03 of distance is 17.3mm, offset
Amount is 17.3mm, it is seen that offset 17.3mm is the third critical point of this programme, as shown in Fig. 4-e.
In practical applications, the determination of first critical point is the radius and the crystalline substance according to circumference where interior coil sensor
The variation determination of the radius of circumference where circle, that is to say, that according to circumference where circumference where interior coil sensor and wafer
Connect what contact determined.
The determination of second critical point is according to circumference where the radius of circumference where outer coil sensor and the wafer
The variation determination of radius, that is to say, that determined according to the contact that connects of circumference where circumference where outer coil sensor and wafer
's.
The determination of third critical point is according to circumference where the radius of circumference, outer coil sensor where interior coil sensor
The variation determination of the radius of circumference where radius and the wafer, that is to say, that according to interior coil sensor place circumference, outside
Circumference where circumference where coil sensor and the wafer connects what contact determined.
It should be noted that other azimuth deviations are referred to above process calculating, it can judge in transmission chamber
The offset direction of wafer position and magnitude range, the result after calculating are as shown in Figure 5.
It should be noted that if upper cover, which then passes through upper cover for transparent material, can realize optic path, if upper cover is non-
Transparent material then needs to be equipped with aperture below detection device, is used for optic path.
The present embodiment, firstly, loop truss device is arranged in chamber, which includes: sensor module and judgement
The top of the chamber is arranged in module, multiple sensor modules, and multiple sensor modules are along the circumferential direction
Concentric locating, for obtaining wafer to be detected in the radial position information of the different detection zones of the circumference；The judgement mould
Block, for judging whether the wafer to be detected occurs according to the radial position information and preset standard radial position information
Offset, this ensure that stability of the wafer to be detected in chamber indoor location, meanwhile, it, can also if wafer to be detected shifts
To judge the position to shift, be conducive to problem investigation.
Embodiment two
One wafer detecting apparatus based on the above embodiment, referring to Fig. 6, it illustrates be applied to the wafer detecting apparatus
Wafer detection method, the wafer detection method can be applied to the field physical vapour deposition (PVD) PVD, can also be applied to chemical vapor deposition
The shallow lake field CVD can also be applied to etching ETCH field of semiconductor devices, specifically include:
Step 601: obtaining radial position information of the wafer to be detected in each detection zone in chamber.
Step 602: according to the radial position information and preset standard radial location information, judging the crystalline substance to be detected
Whether circle shifts in the chamber.
If the radial position information deviates preset standard radial location information, it is determined that wafer to be detected occurs inclined
It moves.
The present embodiment, firstly, the real-time status by sensor module judges wafer to be detected in the indoor diameter of transmission cavity
To location information, whether the wafer to be detected is determined according to the radial position information and preset standard radial location information
It shifts, this ensure that stability of the wafer to be detected in chamber indoor location, meanwhile, if wafer to be detected shifts,
Also it may determine that the position to shift, be conducive to problem investigation.
Embodiment three
Referring to Fig. 7, it illustrates a kind of wafer detection method flow charts described in the embodiment of the present application three, specifically include:
Step 701: obtaining first detection information of the sensor immediately below the first calibration position, obtained according to each sensor
First detection information taken forms the radial position information.
Step 702: according to the radial position information and it is described first calibration position corresponding to the scale value come
Judge the offset of the wafer to be detected.
In practical applications, circumference is straight where demarcating position with first according to the diameter of circumference where radial position information
Diameter determines the offset of wafer to be detected.
Step 703: the offset is compared with the first critical value of setting, according to comparison result determine it is described to
Whether detection wafer shifts in the chamber.First critical value is determined according to actual process demand, such as can be with
It is set equal to the corresponding offset 1mm of first critical point.
It then determines that wafer to be detected shifts when offset is greater than the first critical value set, and records the first offset
The offset direction and.When the first critical value that offset is less than or equal to setting then determines wafer to be detected, there is no offsets.
After the application has detected in transmission chamber, the wafer detection outside transmission chamber also is being carried out, and will be in chamber
Comparison result be compared with the comparison result outside chamber, that is to say, that compare the indoor offset of transmission chamber chamber and biography
Offset outside defeated chamber, mutually checking and being mutually authenticated in transit chamber room and outside chamber, determines whether wafer deviates, if chamber
It is indoor different with the testing result outside chamber, then it should check whether the detection system in chamber and outside chamber exception occurs, in turn
Improve the stability of wafer.
Example IV
On the basis of embodiment three, referring to Fig. 8, it illustrates a kind of wafer detection methods described in the embodiment of the present application four
Flow chart specifically includes:
Step 801: obtaining second detection information of the sensor immediately below the second calibration position, first detection is believed
Radial position information is collectively formed in breath and the second detection information.
Step 802: according to the radial position information and it is described second calibration position corresponding to the scale value come
Judge the offset of the wafer to be detected.
In practical applications, circumference is straight where demarcating position with second according to the diameter of circumference where radial position information
Diameter determines the offset of wafer to be detected.
Step 803: offset being compared with the second critical value of setting, when offset is critical greater than second set
When value, then alarm.
Second critical value is determined according to actual process demand, such as equal to second critical point can be set into and correspond to
Offset 2mm, also can be set into be equal to the corresponding offset 17.3mm of third critical point.Such as when offset is greater than
First critical value but be less than or equal to the second critical value when, determine that its offset is faced between the corresponding 1mm of the first critical value and second
Between the corresponding 2mm of dividing value, it is believed that offset is smaller, can continue in next step.If offset is greater than second and faces
When dividing value, it is believed that offset is larger, and triggering alarms and terminates this movement, and step is completed, while test chamber indoor heating system
Whether exception is occurred.
The present embodiment, by being detected to the indoor wafer of chamber, so that the position that deviating occurs in wafer can accurately be found
It sets and direction, and then detection device is adjusted in time, while realization accurately detects wafer, also improve process flow
Stability.
It should be noted that for the aforementioned method embodiment, for simple description, therefore, it is stated as a series of
Combination of actions, but those skilled in the art should understand that, the application is not limited by the described action sequence, because according to
According to the application, some steps may be performed in other sequences or simultaneously.Secondly, those skilled in the art should also know that,
The embodiments described in the specification are all preferred embodiments, necessary to related movement not necessarily the application.
For above method embodiment, since it is substantially similar to Installation practice, so being described relatively simple, related place
Illustrate referring to the part of shown device embodiment.
All the embodiments in this specification are described in a progressive manner, the highlights of each of the examples are with
The difference of other embodiments, the same or similar parts between the embodiments can be referred to each other.
It would have readily occurred to a person skilled in the art that: any combination application of above-mentioned each embodiment is all feasible, therefore
Any combination between above-mentioned each embodiment is all the embodiment of the application, but this specification exists as space is limited,
This is not just detailed one by one.
Although the preferred embodiment of the application has been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications can be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the application range.
Above to a kind of wafer detecting apparatus provided herein and detection method, it is described in detail, herein
Applying specific case, the principle and implementation of this application are described, and the explanation of above example is only intended to help
Understand the present processes and its core concept；At the same time, for those skilled in the art, according to the thought of the application,
There will be changes in the specific implementation manner and application range, in conclusion the content of the present specification should not be construed as to this
The limitation of application.
Claims (10)
1. a kind of wafer detecting apparatus, which is characterized in that the detection device be applied to chamber in, comprising: sensor module and
Judgment module；
The top of the chamber is arranged in multiple sensor modules, and multiple sensor modules are along the circumferential direction
Concentric locating, for obtaining wafer to be detected in the radial position information of the different detection zones of the circumference；
The judgment module, for according to the radial position information and preset standard radial location information, judgement it is described to
Whether detection wafer shifts in the chamber.
2. detection device according to claim 1, which is characterized in that the detection device further include: annular structural part, cunning
Dynamic guide rail, scale and locking device；
The upper cover of the chamber is arranged in the annular structural part；
The slide rail is arranged on the annular structural part, and the slide rail is radially extended along the circumference；It is described
Sensor module is arranged on the corresponding slide rail, and can be adjusted along the slide rail；
The scale is parallel to the slide rail setting or is arranged on the slide rail, for demarcating the sensor group
The radial position information of part；
The locking device, for locking the sensor module after the sensor module is adjusted to calibration position.
3. detection device according to claim 2, which is characterized in that the sensor module includes the diameter along the circumference
To at least one sensor of arrangement；Each sensor is arranged on the slide rail, and each sensor
It is set to corresponding first calibration position, for obtaining the first detection information immediately below first calibration position, Ge Gesuo
First detection information for stating sensor acquisition forms the radial position information.
4. detection device according to claim 2, which is characterized in that the sensor module include: outer coil sensor and
Interior coil sensor；
The outer coil sensor and the interior coil sensor and are arranged in the slide rail along the arranged radially of the circumference
On；
The outer coil sensor is set to the second calibration position, for obtaining the second detection immediately below second calibration position
Information；The interior coil sensor is set to third calibration position, for obtaining the third inspection immediately below third calibration position
Measurement information；Second detection information and third detection information that the outer coil sensor and the interior coil sensor obtain are formed
The radial position information.
5. detection device according to claim 3 or 4, which is characterized in that be provided with scale value on the scale；It is described to sentence
Disconnected module is also used to be judged according to the scale value corresponding to the radial position information and the calibration position described
The offset of wafer to be detected.
6. detection device according to claim 5, which is characterized in that the sensor be reflective photoelectric sensor or
Correlation photoelectric sensor.
7. a kind of wafer detection method applied to detection device described in claim 1, which is characterized in that the wafer detection side
Method includes:
Obtain radial position information of the wafer to be detected in each detection zone in chamber；
According to the radial position information and preset standard radial location information, judge the wafer to be detected in the chamber
Inside whether shift.
8. the method according to the description of claim 7 is characterized in that the wafer to be detected is in each detection in the acquisition chamber
The step of radial position information in region includes:
Obtain first detection information of the sensor immediately below the first calibration position, described first obtained according to each sensor
Detection information forms the radial position information；
It is described according to the radial position information and preset standard radial location information, judge the wafer to be detected described
The step of whether shifting in chamber include:
The crystalline substance to be detected is judged according to scale value corresponding to the radial position information and first calibration position
Round offset；
The offset is compared with the first critical value of setting, determines the wafer to be detected in institute according to comparison result
It states in chamber and whether shifts.
9. according to the method described in claim 8, it is characterized in that, the wafer to be detected is in each detection in the acquisition chamber
The step of radial position information in region further include:
Second detection information of the sensor immediately below the second calibration position is obtained, by first detection information and described second
Radial position information is collectively formed in detection information；
It is described according to the radial position information and preset standard radial location information, judge the wafer to be detected described
The step of whether shifting in chamber further comprises:
The crystalline substance to be detected is judged according to scale value corresponding to the radial position information and second calibration position
Round offset；
Scale value corresponding to second calibration position is greater than scale value corresponding to first calibration position.
10. according to the method described in claim 9, it is characterized in that, described according to the radial position information and preset mark
Quasi- radial position information judges that the step of whether wafer to be detected shifts in the chamber further comprises:
The offset is compared with the second critical value of setting, when the offset is greater than the second critical value of setting
When, then it alarms；
Second critical value is greater than first critical value.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110411378A (en) * | 2019-08-06 | 2019-11-05 | 杭州众硅电子科技有限公司 | A kind of wafer detecting apparatus and its detection method |
| CN110718497A (en) * | 2019-10-18 | 2020-01-21 | 武汉新芯集成电路制造有限公司 | Wafer chuck, bonding equipment, and method and system for adjusting wafer position |
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| CN111288889A (en) * | 2020-01-17 | 2020-06-16 | 北京北方华创微电子装备有限公司 | Position detection device and position detection method of chamber process assembly |
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| US20230036587A1 (en) * | 2021-07-29 | 2023-02-02 | Changxin Memory Technologies, Inc. | Wafer alignment device, wafer alignment method and wafer alignment system |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282605A (en) * | 2013-07-08 | 2015-01-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method, device and system for debugging silicon wafer conveying position in process chamber |
| CN104916560A (en) * | 2014-03-11 | 2015-09-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer detection system, reaction chamber and wafer detection method |
| CN104916573A (en) * | 2015-06-17 | 2015-09-16 | 北京七星华创电子股份有限公司 | Combined detection method and device for silicon wafer distributed state on load bearing region of semiconductor device |
| US20150376782A1 (en) * | 2014-06-27 | 2015-12-31 | Kevin Griffin | Wafer Placement And Gap Control Optimization Through In Situ Feedback |
-
2018
- 2018-11-08 CN CN201811327524.6A patent/CN109671637B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282605A (en) * | 2013-07-08 | 2015-01-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method, device and system for debugging silicon wafer conveying position in process chamber |
| CN104916560A (en) * | 2014-03-11 | 2015-09-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer detection system, reaction chamber and wafer detection method |
| US20150376782A1 (en) * | 2014-06-27 | 2015-12-31 | Kevin Griffin | Wafer Placement And Gap Control Optimization Through In Situ Feedback |
| CN104916573A (en) * | 2015-06-17 | 2015-09-16 | 北京七星华创电子股份有限公司 | Combined detection method and device for silicon wafer distributed state on load bearing region of semiconductor device |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110411378A (en) * | 2019-08-06 | 2019-11-05 | 杭州众硅电子科技有限公司 | A kind of wafer detecting apparatus and its detection method |
| CN110718497A (en) * | 2019-10-18 | 2020-01-21 | 武汉新芯集成电路制造有限公司 | Wafer chuck, bonding equipment, and method and system for adjusting wafer position |
| CN111288889A (en) * | 2020-01-17 | 2020-06-16 | 北京北方华创微电子装备有限公司 | Position detection device and position detection method of chamber process assembly |
| CN111258019B (en) * | 2020-03-20 | 2022-04-08 | 宁波翔东智能科技有限公司 | Electric conversion device for optical filter |
| CN111258019A (en) * | 2020-03-20 | 2020-06-09 | 宁波翔东智能科技有限公司 | Electric conversion device for optical filter |
| CN112820686A (en) * | 2021-03-09 | 2021-05-18 | 上海广川科技有限公司 | Wafer teaching device and teaching method |
| CN113675123A (en) * | 2021-07-29 | 2021-11-19 | 长鑫存储技术有限公司 | Wafer calibration device, method and system |
| WO2023004883A1 (en) * | 2021-07-29 | 2023-02-02 | 长鑫存储技术有限公司 | Wafer alignment device, method and system |
| US20230036587A1 (en) * | 2021-07-29 | 2023-02-02 | Changxin Memory Technologies, Inc. | Wafer alignment device, wafer alignment method and wafer alignment system |
| CN113675123B (en) * | 2021-07-29 | 2024-01-05 | 长鑫存储技术有限公司 | Wafer calibration device, method and system |
| CN116525482A (en) * | 2023-06-28 | 2023-08-01 | 东莞市兆恒机械有限公司 | Method for calibrating semiconductor detection equipment |
| CN116525482B (en) * | 2023-06-28 | 2024-01-05 | 广东兆恒智能科技有限公司 | Method for calibrating semiconductor detection equipment |
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