CN109671616A - A kind of method of laser cleaning silicon wafer or lens surface particle - Google Patents
A kind of method of laser cleaning silicon wafer or lens surface particle Download PDFInfo
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- CN109671616A CN109671616A CN201910044747.XA CN201910044747A CN109671616A CN 109671616 A CN109671616 A CN 109671616A CN 201910044747 A CN201910044747 A CN 201910044747A CN 109671616 A CN109671616 A CN 109671616A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02098—Cleaning only involving lasers, e.g. laser ablation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
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Abstract
The present invention provides a kind of methods of laser cleaning silicon wafer or lens surface particle, first, the viscose to laser with suction-operated is coated in the surface to be cleaned of workpiece, is surrounded particulate dirt by viscose, particulate dirt will be cured in viscose after drying；Then, viscose layer surface is irradiated using pulse laser beam, pulse laser beam acts on mucigel, generate shock wave, under the instantaneous thermodynamic activity of laser, mucigel and the particulate dirt being solidificated in viscose crack, and form the fragment that granularity is 100~300 μm, and flown away from from the surface of workpiece, separate particulate dirt from the surface to be cleaned of workpiece；Workpiece passes through after high-pressure purge, is put into acetone soln and carries out the residue that ultrasonic cleaning removing adheres to workpiece surface.It is capable of the particle on effective cleaning workpiece surface, protects workpiece surface from the direct ablation of laser, to avoid damage of the silicon chip surface by laser thermal effect.
Description
Technical field
The present invention relates to field of surface treatment, and in particular to a kind of method of laser cleaning silicon wafer or lens surface particle.
Background technique
Integrated circuit board silicon wafer usually requires to be cleaned before packaging, and silicon chip surface is attached in process to remove
Particulate dirt, to improve the performance of silicon wafer.High power lenses usually require to be cleaned before plated film, are added with removal
It is attached to the particulate dirt of lens surface during work, to improve the damage threshold of eyeglass.The particulate dirt of micro/nano level exists
The adhesion mechanism of the particulate dirt of the adhesion mechanism and larger size of workpiece surface is entirely different, under the weight of itself, can produce
Raw plastic deformation, to make adhesion substantial increase, causes conventional chemical cleaning and ultrasonic cleaning not can be removed, therefore,
The particulate dirt for washing micro-or nano size is a problem of silicon wafer aftertreatment technology or lens cleaning.
Laser cleaning is a kind of new and effective cleaning means, can effectively remove a plurality of types of surface contaminants, however,
Original surface texture can be destroyed since laser acts directly on silicon chip surface, cleaning silicon chip surface can not be used directly to.
Cleaning for lenses material, the particulate pollutant due to being attached to lens surface is usually all lenses material, right
The absorptivity of laser is very low, it is therefore desirable to be cleaned by the way of high power laser all standing, cleaning efficiency is low, is produced into
This height, and can not sometimes remove dirt.
Summary of the invention
In response to the deficiencies in the existing technology, the present invention provides the sides of a kind of laser cleaning silicon wafer or lens surface particle
Method is capable of the particle on effective cleaning workpiece surface.
The present invention achieves the above technical objects by the following technical means.
A kind of method of laser cleaning silicon wafer or lens surface particle, which is characterized in that
Firstly, the viscose to laser with suction-operated to be coated in the surface to be cleaned of workpiece, by viscose by particle
Dirt surrounds, and particulate dirt will be cured in viscose after drying；
Then, viscose layer surface is irradiated using pulse laser beam, pulse laser beam acts on mucigel, generates impact
Wave, under the instantaneous thermodynamic activity of laser, mucigel and the particulate dirt being solidificated in viscose crack, is formed granularity for 100~
300 μm of fragment, and flown away from from the surface of workpiece, separate particulate dirt from the surface to be cleaned of workpiece；Workpiece passes through high pressure
After gas purging, it is put into acetone soln and carries out the residue that ultrasonic cleaning removing adheres to workpiece surface.
Further, described that there is the viscose of suction-operated by acrylic acid epoxy resin layer to laser and be coated in acrylic acid
Absorbed layer composition on epoxy resin layer, the absorbed layer coats before acrylic acid epoxy resin layer is not dry, therefore inhales
Layer is received to be bonded together with viscose.
Further, the absorbed layer is black amino paint, with a thickness of 5-20 μm；The acrylic acid epoxy resin layer
With a thickness of 50-80 μm.
Further, the absorbed layer is black belt, and the black belt is black polyester adhesive tape；Black polyester adhesive tape
With a thickness of 5-10 μm；The acrylic acid epoxy resin layer with a thickness of 30-100 μm.
Further, in the moisture film for coating a laminar flow in black belt upper surface；Pulse laser beam is through flowing
Moisture film, irradiation carries out laser cleaning on black belt surface, to entire silicon chip surface.
Further, the flowing water film is deionization moisture film, with a thickness of 1~1.5mm, flow velocity be 1cm/s~
3cm/s；The black belt is black polyester adhesive tape, with a thickness of 5-15 μm；Acrylic acid epoxy resin is with a thickness of 30-100 μm.
Further, the viscose to laser with suction-operated is to be pressed by acrylic acid epoxy resin and nano carbon particle
It is mixed according to volume ratio 4:1, viscose is with a thickness of 30-100 μm.
Further, after the viscose solidification, use power density for 1 × 105~5 × 105GW/cm2Pulse laser beam
Irradiate the gummed surface ablation formation rule array of blind holes that there is suction-operated in laser；It is irradiated again using pulse laser beam in phase
Four adjacent blind hole middle position, that is, laser cleaning points carry out laser cleaning to entire workpiece surface.
Further, the distance between adjacent blind hole d1With the distance d of adjacent laser cleaning point2It is 100-300 μm, it is blind
The aperture in hole is 40-60 μm, depth is 20-40 μm.
It is further, described to there is the viscose of suction-operated to be coated by following coating material laser,
The coating material composition is acrylic acid epoxy resin, nanometer silicone powder, polyurethane foams stabilizers and nano-carbon powder
Grain, wherein the volume content of acrylic acid epoxy resin is 60-70%, and the volume content of nanometer silicone powder is 5-8%, and polyurethane is even
The volume content of infusion is 6-8%, and the volume content of nano-carbon powder particle is 20-25%；Coating layer thickness is 30-100 microns.
Further, the pulse duration range of the pulse laser beam is 10~300ns, when laser beam reaches absorption layer surface
Diameter be 50~60 μm, power density range be 106~107GW/cm2, the size of the dirt particle is 0.5~50 μm,
The concentration expressed in percentage by volume of the acetone soln is 50%.
The working principle of the method for laser cleaning silicon wafer or lens surface particle of the present invention are as follows:
There is the viscose coating of suction-operated to laser in workpiece surface coating, after viscose is coated in the surface of lens,
Grain dirt is surrounded by viscose, and particulate dirt will be cured in viscose after drying.Mucigel is irradiated using pulse laser beam
Surface, pulse laser beam act on mucigel, and viscose coating has suction-operated to laser, shock wave are generated, in laser
Under instantaneous thermodynamic activity, mucigel and the particulate dirt being solidificated in viscose crack, and form the fragment that granularity is 100~300 μm,
And flown away from from the surface of workpiece, separate particulate dirt from the surface to be cleaned of workpiece；Workpiece passes through after high-pressure purge,
It is put into acetone soln and carries out the residue that ultrasonic cleaning removing adheres to workpiece surface.
The method of laser cleaning silicon wafer or lens surface particle of the present invention, it is described that there is suction-operated to laser
In addition viscose coating can coat one layer of absorbed layer on acrylic acid epoxy resin using resin glue as jointing material；Or
Person is mixed into nano carbon particle in jointing material, so that the jointing material for being mixed with nano particle has the performance of absorption laser.Tree
Rouge glue uses brittle acrylic acid epoxy resin, can coated particle dirt well, and it is easy to crack after hardening, in laser beam heat
It is capable of forming 100~300 μm of fragment under power and shock wave, removes particulate dirt from lens surface, cleaning effect is good；
Under the thermodynamic activity of laser beam, the overburden size of formation is greater than laser beam and irradiates to diameter when absorbing layer surface, therefore
Without overlap joint between adjacent laser hot spot, the distance between hot spot is 2~5 times of spot diameter, can increase substantially cleaning
Efficiency.
Meanwhile the presence of viscose coating makes laser beam not act directly on silicon chip surface, protect workpiece surface from
The direct ablation of laser, to avoid damage of the silicon chip surface by laser thermal effect.
Detailed description of the invention
Fig. 1 is the schematic diagram of one embodiment of method of laser cleaning lens surface particle of the present invention.
Fig. 2 is the schematic diagram of one embodiment of method of laser cleaning silicon chip surface particle.
Fig. 3 is the schematic diagram of one embodiment of method of laser cleaning lens surface particle of the present invention.
Fig. 4 is that laser beats blind hole and laser cleaning position view.
Fig. 5 is the schematic diagram of one embodiment of method of laser cleaning silicon chip surface particle.
Detailed description of the invention:
1 pulse laser beam, 2 black amino paints, 3 acrylic acid epoxy resin layers, 4 particulate dirts, 5 lens, 6 silicon wafers, 7 black
Adhesive tape, 8 flowing water films, 11 blind holes；12 laser cleaning points.
Specific embodiment
Present invention will be further explained with reference to the attached drawings and specific examples, but protection scope of the present invention is simultaneously
It is without being limited thereto.
The method of laser cleaning silicon wafer or lens surface particle of the present invention, firstly, will have absorption to make laser
Viscose is coated in the surface to be cleaned of workpiece, is surrounded particulate dirt by viscose, and particulate dirt will be by after drying
It is solidificated in viscose.Then, viscose layer surface is irradiated using pulse laser beam, pulse laser beam acts on mucigel, generates
Shock wave, under the instantaneous thermodynamic activity of laser, mucigel and the particulate dirt being solidificated in viscose crack, and forming granularity is
100~300 μm of fragment, and flown away from from the surface of workpiece, separate particulate dirt from the surface to be cleaned of workpiece；Workpiece passes through
After high-pressure purge, it is put into acetone soln and carries out the residue that ultrasonic cleaning removing adheres to workpiece surface.
Embodiment 1
As shown in Figure 1, using cleaning method cleaning material of the present invention for the lens 5 of quartz；On 5 surface of lens
The material of grain dirt 4 is quartz, and size distribution is 0.5~50 μm.
Firstly, the surface to be cleaned in lens 5 uniformly coats the acrylic acid epoxy resin layer 3 that a layer thickness is about 60 μm；
Coating a layer thickness in 3 upper surface of acrylic acid epoxy resin layer is about 10 μm of absorbed layers, i.e. brittle black amino paint 2；To absorption
Layer and acrylic acid epoxy resin layer 3 carry out drying hardening；Absorbed layer and acrylic acid epoxy resin layer 3 is set to be sequentially coated on lens 5
Surface to be cleaned on.The irradiation of pulse laser beam 1 is absorbing layer surface, and the distance between hot spot is 100 μm after focusing, to entire
5 surface of lens carries out laser cleaning.Lens 5 carry out ultrasound clearly by after high-pressure purge, being put into 50% acetone soln
It washes.
When use pulse laser single pulse energy for 1mJ, frequency 100KHZ, 1 pulsewidth of pulse laser beam issued
For 10ns, power density 106GW/cm2, spot diameter is 50 when reaching the upper surface of absorbed layer after 1 line focus of pulse laser beam
μm.Laser cleaning efficiency is 2.4m2/h.Through detecting, the particulate dirt density on 5 surface of laser cleaning front lens is 10.8/cm2,
After laser cleaning, the particulate dirt density on 5 surface of lens is 0.6/cm2。
When pulse laser single pulse energy is 0.5mJ, frequency 150KHZ, 1 pulsewidth of pulse laser beam issued is
100ns, power density 5*106GW/cm2, hot spot is straight when reaching the upper surface of black amino paint 2 after 1 line focus of pulse laser beam
Diameter is 55 μm；2 thickness of black amino paint is about 10 μm；Acrylic acid epoxy resin layer 3 with a thickness of 60 μm.Laser cleaning efficiency is
4.8m2/h.Through detecting, the particulate dirt density on 5 surface of laser cleaning front lens is 11.2/cm2, after laser cleaning, lens 5
The particulate dirt density on surface is 1.1/cm2。
When pulse laser single pulse energy is 1.5mJ, frequency 200KHZ, 1 pulsewidth of pulse laser beam issued is
300ns, power density 107GW/cm2, spot diameter when reaching the upper surface of black amino paint 2 after 1 line focus of pulse laser beam
It is 60 μm；2 thickness of black amino paint is about 10 μm；Acrylic acid epoxy resin layer 3 with a thickness of 60 μm；The material of lens 5 is stone
English.Laser cleaning efficiency is 7.2m2/h.Through detecting, the particulate dirt density on 5 surface of laser cleaning front lens is 11.8/cm2,
After laser cleaning, the particulate dirt density on 5 surface of lens is 0.7/cm2。
Embodiment two
As shown in Fig. 2, using cleaning method cleaning silicon chip 6 of the present invention；The material of the particulate dirt 4 on 6 surface of silicon wafer
Matter is silicon, and size distribution is 0.5~50 μm.
Firstly, the surface to be cleaned in silicon wafer 6 uniformly coats one layer of acrylic acid epoxy resin layer 3, to acrylic acid epoxy tree
After rouge layer 3 carries out drying hardening, one layer of black belt 7 is pasted in 3 upper surface of acrylic acid epoxy resin layer；Black belt 7 and third
Olefin(e) acid epoxy resin layer 3 is sequentially coated in the surface to be cleaned of silicon wafer 6.It is irradiated using pulse laser beam 1 in 7 table of black belt
Face carries out laser cleaning to entire 6 surface of silicon wafer；Black belt 7 is removed from 6 surface of silicon wafer；Silicon wafer 6 passes through high-pressure purge
Later, 50% acetone soln is put into be cleaned by ultrasonic.
After acrylic acid epoxy resin layer 3 is coated in the surface of silicon wafer 6, particulate dirt 4 is surrounded by viscose, after drying
Grain dirt 4 will be cured in acrylic acid epoxy resin layer 3；Black belt 7 and brittleness acrylic acid epoxy resin layer 3 are bonded in one
It rises；7 one side of black belt can be very good to absorb the energy of pulse laser as absorbed layer, provide the pulse pressure of amplitude
Power.Pulse laser beam is acted on on the very high black belt of pulse laser beam absorptivity 7, shock wave is generated, in the wink of laser
When thermodynamic activity under, acrylic acid epoxy resin layer 3 and the particulate dirt being solidificated in acrylic acid epoxy resin layer 3 crack into granularity
Fragment for 100~300 μm and the sur-face peeling from silicon wafer, the dirt fragment of removing are sticked to the lower surface of black belt 7, avoid
The broken splashing of dirt, reduces the pollution of environment.To protrude effect be exactly these can be made broken glutinous for another of black belt 7
Gluing knot is on adhesive tape, so that splash will not be generated, in addition, the presence of black belt 7, can prevent and treat because of acrylic acid epoxy
Resin layer 3, which falls off, causes post laser pulsed irradiation to workpiece substrate surface, thus disfiguring workpiece surface.
When pulse laser single pulse energy is 1mJ, frequency 100KHZ, 1 pulsewidth of pulse laser beam issued is
10ns, power density 106GW/cm2, spot diameter is 50 when reaching the upper surface of black belt 7 after pulse laser beam line focus
μm；Black belt 7 is black polyester adhesive tape, and thickness is about 10 μm；Acrylic acid epoxy resin layer 3 with a thickness of 60 μm.Laser
Cleaning efficiency is 2.4m2/h.Through detecting, the particulate dirt density on 6 surface of silicon wafer is 9.7/cm before laser cleaning2, laser cleaning
Afterwards, the particulate dirt density on 6 surface of silicon wafer is 0.7/cm2。
When pulse laser single pulse energy is 0.5mJ, frequency 150KHZ, 1 pulsewidth of pulse laser beam issued is
100ns, power density 5*106GW/cm2, spot diameter when reaching the upper surface of black belt 7 after pulse laser beam line focus
It is 55 μm；Black belt 7 is black polyester adhesive tape, and thickness is about 10 μm；Acrylic acid epoxy resin layer 3 with a thickness of 60 μm.
Laser cleaning efficiency is 4.8m2/h.Through detecting, the particulate dirt density on 6 surface of silicon wafer is 11.4/cm before laser cleaning2, swash
After light cleaning, the particulate dirt density on 6 surface of silicon wafer is 1.3/cm2。
When pulse laser single pulse energy is 1.5mJ, frequency 200KHZ, 1 pulsewidth of pulse laser beam issued is
300ns, power density 107GW/cm2, spot diameter is when reaching the upper surface of black belt 7 after pulse laser beam line focus
60μm；Black belt 7 is black polyester adhesive tape, and thickness is about 10 μm；Acrylic acid epoxy resin layer 3 with a thickness of 60 μm.Swash
Light cleaning efficiency is 7.2m2/h.Through detecting, the particulate dirt density on 6 surface of silicon wafer is 10.6/cm before laser cleaning2, laser
After cleaning, the particulate dirt density on 6 surface of silicon wafer is 0.8/cm2。
Embodiment three
As shown in figure 3, using cleaning method cleaning silicon chip 6 of the present invention；The material of the particulate dirt 4 on 6 surface of silicon wafer
Matter is silicon, and size distribution is 0.5~50 μm.
One layer of acrylic acid epoxy resin layer 3 is uniformly coated in the surface to be cleaned of silicon wafer 6 first；To acrylic acid epoxy resin
Layer 3 carries out drying hardening；One layer of black belt 7, black belt 7 and acrylic acid are pasted in 3 upper surface of acrylic acid epoxy resin layer
Epoxy resin layer 3 is sequentially coated in the surface to be treated of silicon wafer 6；The moisture film of a laminar flow is coated in 7 upper surface of black belt
8.Pulse laser beam 1 penetrates flowing water film 8, and irradiation carries out laser cleaning on 7 surface of black belt, to entire 6 surface of silicon wafer；
Black belt 7 is removed from 6 surface of silicon wafer；Silicon wafer 6 carries out ultrasound by after high-pressure purge, being put into 50% acetone soln
Cleaning.
After viscose is coated in the surface of silicon wafer, particulate dirt is surrounded by viscose, and particulate dirt will be cured after drying
In viscose；Black belt 7 is bonded together with brittleness viscose；Pulse laser beam is acted on through flowing water film swashs pulse
On the very high black belt 7 of beam absorption, generate shock wave, under the instantaneous thermodynamic activity of laser, viscose and be solidificated in it is glutinous
Fragment that particulate dirt cracking in glue is 100~300 μm at granularity and from the sur-face peeling of silicon wafer, the dirt fragment of removing is viscous
In the lower surface of black belt 7, separated simultaneously from silicon chip surface with black belt 7.The moisture film 8 for increasing a laminar flow, is flowing
Under the effect of contraction of dynamic moisture film 8, pulse laser irradiation will generate plasma, to generate pulse, pulse will be by
Be extended for 1.25 times, amplitude be amplified to 2.5 times.The amplitude of laser blast wave can be enhanced in flowing water film 8, to improve laser
Cleaning effect, in addition, flowing water film can also guarantee that the black belt 7 for being bonded with dirt fragment after laser cleaning still maintains
It is smooth, guarantee laser cleaning effect.
When pulse laser single pulse energy is 1mJ, frequency 100KHZ, 1 pulsewidth of pulse laser beam issued is
10ns, power density 106GW/cm2, spot diameter is 50 when reaching the upper surface of black belt 7 after pulse laser beam line focus
μm；Flowing water film 8 is deionized water, with a thickness of 1mm, flow velocity 1cm/s；Black belt 7 is black polyester adhesive tape, thickness
About 10 μm；Acrylic acid epoxy resin layer 3 with a thickness of 60 μm.Laser cleaning efficiency is 3.6m2/h.Through detecting, laser cleaning
The particulate dirt density on preceding 6 surface of silicon wafer is 13.4/cm2, after laser cleaning, the particulate dirt density on 6 surface of silicon wafer is 1.1
/ cm2。
When pulse laser single pulse energy is 0.5mJ, frequency 150KHZ, 1 pulsewidth of pulse laser beam issued is
100ns, power density 5*106GW/cm2, spot diameter when reaching the upper surface of black belt 7 after pulse laser beam line focus
It is 55 μm；Flowing water film 8 is deionized water, with a thickness of 1.5mm, flow velocity 2cm/s；Black belt 7 is black polyester adhesive tape,
Its thickness is about 10 μm；Acrylic acid epoxy resin layer 3 with a thickness of 60 μm.Laser cleaning efficiency is 5.6m2/h.It is detected, is swashed
The particulate dirt density on 6 surface of silicon wafer is 14.3/cm before light cleans2, after laser cleaning, the particulate dirt on 6 surface of silicon wafer is close
Degree is 1.0/cm2。
When pulse laser single pulse energy is 1.5mJ, frequency 200KHZ, 1 pulsewidth of pulse laser beam issued is
300ns, power density 107GW/cm2, spot diameter is when reaching the upper surface of black belt 7 after pulse laser beam line focus
60μm；Flowing water film 8 is deionized water, with a thickness of 1.5mm, flow velocity 3cm/s；Black belt 7 is black polyester adhesive tape,
Thickness is about 10 μm；Acrylic acid epoxy resin layer 3 with a thickness of 60 μm.Laser cleaning efficiency is 10.8m2/h.Through detecting, laser
The particulate dirt density on 6 surface of silicon wafer is 9.9/cm before cleaning2, after laser cleaning, the particulate dirt density on 6 surface of silicon wafer is
0.7/cm2。
Example IV
As shown in figure 4, using cleaning method cleaning material of the present invention for the lens 5 of quartz；On 5 surface of lens
The material of grain dirt 4 is quartz, and size distribution is 0.5~50 μm.
Firstly, the surface to be cleaned in lens 5 uniformly coats one layer of viscose coating to laser with suction-operated；Viscose
Coating is mixed by acrylic acid epoxy resin and nano carbon particle according to volume ratio 4:1.Drying hardening is carried out to viscose coating；
The irradiation of pulse laser beam 1 carries out laser cleaning in viscose coating surface, to entire 5 surface of lens.Lens 5 are blown by high pressure gas
After washing, it is put into 50% acetone soln and is cleaned by ultrasonic.
Nano carbon particle has good assimilation effect to the pulse laser beam of 1064nm wavelength, and nano carbon particle is added
Acrylic acid epoxy resin can make have good absorption effect to pulse laser in acrylic acid epoxy resin, mix nano-sized carbon
The acrylic acid epoxy resin of grain is more than 50% to the absorptivity of pulse laser.The specific surface of nano carbon particle is big simultaneously, it is only necessary to
A small amount of be added can increase substantially mucigel to the assimilation effect of pulse laser.With embodiment so that can subtract compared in the of three
The maturation of few coating coating, becomes single layer coating, reduces the complexity of technique.
In the present embodiment: when pulse laser single pulse energy is 1mJ, frequency 100KHZ, the pulse laser issued
1 pulsewidth of beam is 10ns, is carbon dioxide laser, 10.6 μm of wavelength, the upper table of viscose coating is reached after 1 line focus of pulse laser beam
Spot diameter is 50 μm when face；The main component of viscose coating is acrylic acid epoxy resin and nano carbon particle, with a thickness of 60 μm；
The material of lens 5 is quartz；The material of particulate dirt 3 is quartz, and size distribution is 0.5~50 μm.Laser cleaning efficiency is
2.4m2/h.Through detecting, the particulate dirt density on 5 surface of laser cleaning front lens is 11.4/cm2, after laser cleaning, lens 5
The particulate dirt density on surface is 0.7/cm2。
When pulse laser single pulse energy is 0.5mJ, frequency 150KHZ, 1 pulsewidth of pulse laser beam issued is
100ns, be carbon dioxide laser, 10.6 μm of wavelength, after 1 line focus of pulse laser beam reach viscose coating upper surface when hot spot
Diameter is 50 μm；The main component of viscose coating is acrylic acid epoxy resin and nano carbon particle, with a thickness of 60 μm.Laser cleaning
Efficiency is 4.8m2/h.Through detecting, the particulate dirt density on 5 surface of laser cleaning front lens is 12.8/cm2, after laser cleaning,
The particulate dirt density on 5 surface of lens is 1.2/cm2。
When pulse laser single pulse energy is 1.5mJ, frequency 200KHZ, 1 pulsewidth of pulse laser beam issued is
300ns, be carbon dioxide laser, 10.6 μm of wavelength, after 1 line focus of pulse laser beam reach viscose coating upper surface when hot spot
Diameter is 50 μm；The main component of viscose coating is acrylic acid epoxy resin and nano carbon particle, with a thickness of 60 μm.Laser cleaning
Efficiency is 7.2m2/h.Through detecting, the particulate dirt density on 5 surface of laser cleaning front lens is 10.8/cm2, after laser cleaning,
The particulate dirt density on 5 surface of lens is 0.8/cm2。
Embodiment five
As shown in figure 5, using cleaning method cleaning silicon chip 6 of the present invention；The material of the particulate dirt 4 on 6 surface of silicon wafer
Matter is silicon, and size distribution is 0.5~50 μm.
Firstly, the surface to be cleaned in silicon wafer 6 uniformly coats one layer of viscose coating to laser with suction-operated；To right
There is laser the viscose coating of suction-operated to carry out drying hardening.Use power density for 1 × 105GW/cm2Pulse laser beam 1
The viscose coating surface that there is suction-operated to laser is impinged upon, ablation there is the viscose coating surface of suction-operated to be formed laser
Regular 11 array of blind hole, the aperture of blind hole are about 50 μm, and depth is 30 μm, the spacing d between blind hole1It is 100 μm；Using 5 ×
106GW/cm2Pulse laser beam 1 is irradiated in adjacent four 11 middle positions of blind hole, that is, laser cleaning point 12, and adjacent laser is clear
Wash the distance between point 12 d2It is 100 μm, laser cleaning is carried out to entire 6 surface of silicon wafer.Silicon wafer 6 passes through high-pressure purge
Later, 50% acetone soln is put into be cleaned by ultrasonic.
The Microvia that the present embodiment is distributed using the ablation of small-power density laser by rule on the viscose coating, then
Mucigel is cleaned using the pulse laser of high power density.Due to the presence of viscose layer surface rule distribution Microvia, high power
When density laser cleans, due to the presence of array of blind holes, stress can be generated in bore edges and concentrated, the mucigel can be with Microvia
For edge breaks, fall off so that mucigel be made to remove with fixed size from workpiece surface, to take away particulate dirt.With controllable
Technological parameter come cleaning workpiece surface, on the one hand improve cleaning efficiency；On the other hand it avoids since mucigel is in advance from work
Part falls off, and the damage of workpiece surface is caused so as to cause post laser pulsed irradiation to workpiece surface.
In the present embodiment: when pulse laser single pulse energy is 1mJ, frequency 100KHZ, the pulse laser issued
1 pulsewidth of beam is 10ns, and 10.6 μm of wavelength, the viscose coating for having suction-operated to laser is reached after 1 line focus of pulse laser beam
Upper surface when spot diameter be 50 μm；The main component of viscose 2 is acrylic acid epoxy resin and nano carbon particle, with a thickness of 60
μm；The material of particulate dirt 3 is silicon, and size distribution is 0.5~50 μm.The particulate dirt density on 6 surface of silicon wafer before laser cleaning
For 11.7/cm2, after laser cleaning, the particulate dirt density on 6 surface of silicon wafer is 0.6/cm2, 6 surface of silicon wafer is without laser ablation
Damage.
When pulse laser single pulse energy is 0.5mJ, frequency 150KHZ, 1 pulsewidth of pulse laser beam issued is
100ns is carbon dioxide laser, and 10.6 μm of wavelength, reaching after 1 line focus of pulse laser beam there is suction-operated to stick laser
Spot diameter is 50 μm when the upper surface of gel coating；The main component to laser with the viscose coating of suction-operated is acrylic acid
Epoxy resin and nano carbon particle, with a thickness of 60 μm.Use power density for 3 × 105GW/cm2Pulse laser beam 1 impinge upon pair
Laser has the viscose coating surface of suction-operated, and ablation has the viscose coating surface formation rule of suction-operated blind laser
11 array of hole, the aperture of blind hole are about 50 μm, and depth is 30 μm, the spacing d between blind hole1It is 200 μm；Using 1 × 107GW/
cm2The irradiation of pulse laser beam 1 cleans point in adjacent four 11 middle positions of blind hole, that is, laser cleaning point 12, adjacent laser
The distance between 12 d2It is 200 μm, laser cleaning is carried out to entire 6 surface of silicon wafer.The particle on 6 surface of silicon wafer is dirty before laser cleaning
Object density is 12.5/cm2, after laser cleaning, the particulate dirt density on 6 surface of silicon wafer is 1.1/cm2, 6 surface of silicon wafer is without sharp
Light ablation damage.
When pulse laser single pulse energy is 1.5mJ, frequency 200KHZ, 1 pulsewidth of pulse laser beam issued is
300ns is carbon dioxide laser, and 10.6 μm of wavelength, reaching after 1 line focus of pulse laser beam there is suction-operated to stick laser
Spot diameter is 50 μm when the upper surface of gel coating；The main component to laser with the viscose coating of suction-operated is acrylic acid
Epoxy resin and nano carbon particle, with a thickness of 60 μm.Use power density for 5 × 105GW/cm2Pulse laser beam 1 impinge upon pair
Laser has the viscose coating surface of suction-operated, and ablation has the viscose coating surface formation rule of suction-operated blind laser
11 array of hole, the aperture of blind hole are about 50 μm, and depth is 30 μm, the spacing d between blind hole1It is 300 μm；Using 5 × 107GW/
cm2The irradiation of pulse laser beam 1 cleans point in adjacent four 11 middle positions of blind hole, that is, laser cleaning point 12, adjacent laser
The distance between 12 d2It is 300 μm, laser cleaning is carried out to entire 6 surface of silicon wafer.The particle on 6 surface of silicon wafer is dirty before laser cleaning
Object density is 10.4/cm2, after laser cleaning, the particulate dirt density on 6 surface of silicon wafer is 0.7/cm2, 6 surface of silicon wafer is without sharp
Light ablation damage.
Embodiment six
It is described to there is the viscose coating of suction-operated to be coated by following coating material laser in the present embodiment, institute
Stating coating material composition is acrylic acid epoxy resin, nanometer silicone powder, polyurethane foams stabilizers and nano-carbon powder particle, wherein propylene
The volume content of sour epoxy resin is 60-70%, and the volume content of nanometer silicone powder is 5-8%, the volume of polyurethane foams stabilizers
Content is 6-8%, and the volume content of nano-carbon powder particle is 20-25%；Coating layer thickness is 30-100 microns.
First by volume content be 65% acrylic acid epoxy resin, volume content be 5% nanometer silicone powder, volume contains
The nano-carbon powder particle that the polyurethane foams stabilizers and volume content that amount is 6% are 24% uniformly mixes；Again by acrylic acid epoxy tree
Rouge, nanometer silicone powder, polyurethane foams stabilizers and nano-carbon powder particle mixture be coated uniformly in silicon wafer surface to be treated, apply
Layer is with a thickness of 30-100 microns；The silicon wafer to be processed for being coated with assistant coating again is put into deionized water, it is forced into 2~
3MPa, while assistant coating is dried with ultraviolet irradiation, the ultraviolet irradiation time is 30~50min；By silicon wafer from deionized water
Middle taking-up drying is spare.
Use pulsewidth for 10~300ns, frequency 100KHZ, power density 106~107GW/cm2Pulse laser irradiation
On assistant coating surface, entire silicon chip surface is cleaned, the particulate dirt inside assistant coating will be solidificated in assistant coating
It is removed from silicon chip surface.Laser cleaning efficiency is 2.4m2/h.Through detecting, the particulate dirt density of silicon chip surface before laser cleaning
For 17.5/cm2, after laser cleaning, the particulate dirt density of silicon chip surface is 1.3/cm2。
Acrylic acid epoxy resin has splendid viscosity, can be very good to be attached to silicon chip surface and particulate dirt surface；
Particulate dirt is usually silicon, and nanometer silicone powder and particulate dirt have good adsorption effect, nanometer silicone powder and acrylic acid ring
Oxygen resin one, which works, can make the better effect of curing of coatings particulate dirt；Polyurethane foams stabilizers can preferably remove removing coating
Internal bubble, so that coating be made to obtain preferable particulate dirt solidification effect；It is coated with the workpiece to be processed of assistant coating
It is put into deionized water, is forced into 2~3MPa, while drying assistant coating with ultraviolet irradiation, coat inside can be removed
99% or more bubble, the excellent of curing of coatings particulate dirt；The addition of nano-carbon powder particle make coating to laser no longer
It is transparent, it can protect matrix not stimulated light irradiation damage, while the addition of nano-carbon powder particle can be improved coating and inhale to laser
Yield, to improve laser cleaning effect；After assistant coating drying, it can crack and remove from silicon chip surface under laser action.
After laser cleaning, the coating residue for being attached to silicon chip surface is soluble in acetone and other organic solvent, is easily removed.
The embodiment is a preferred embodiment of the present invention, but present invention is not limited to the embodiments described above, not
In the case where substantive content of the invention, any conspicuous improvement that those skilled in the art can make, replacement
Or modification all belongs to the scope of protection of the present invention.
Claims (11)
1. a kind of method of laser cleaning silicon wafer or lens surface particle, which is characterized in that
Firstly, the viscose to laser with suction-operated to be coated in the surface to be cleaned of workpiece, by viscose by particulate dirt
(4) it surrounds, particulate dirt (4) will be cured in viscose after drying；
Then, viscose layer surface is irradiated using pulse laser beam (1), pulse laser beam (1) acts on mucigel, generates impact
Wave, under the instantaneous thermodynamic activity of laser, mucigel and the particulate dirt being solidificated in viscose (4) are cracked, and forming granularity is 100
~300 μm of fragment, and flown away from from the surface of workpiece, separate particulate dirt (4) from the surface to be cleaned of workpiece；Workpiece passes through
After high-pressure purge, it is put into acetone soln and carries out the residue that ultrasonic cleaning removing adheres to workpiece surface.
2. the method for laser cleaning silicon wafer as described in claim 1 or lens surface particle, which is characterized in that described to laser
Viscose with suction-operated is by acrylic acid epoxy resin layer (3) and the absorbed layer being coated on acrylic acid epoxy resin layer (3)
Composition, the absorbed layer coats before acrylic acid epoxy resin layer (3) is not dry, therefore absorbed layer and viscose are bonded in one
It rises.
3. the method for laser cleaning silicon wafer as claimed in claim 2 or lens surface particle, which is characterized in that the absorption
Layer is black amino paint (2), with a thickness of 5-20 μm；The acrylic acid epoxy resin layer (3) with a thickness of 50-80 μm.
4. the method for laser cleaning silicon wafer as claimed in claim 2 or lens surface particle, which is characterized in that the absorbed layer
For black belt (7), the black belt (7) is black polyester adhesive tape；Black polyester tape thickness is 5-10 μm；The propylene
Sour epoxy resin layer (3) with a thickness of 30-100 μm.
5. the method for laser cleaning silicon wafer as claimed in claim 4 or lens surface particle, which is characterized in that described black
Adhesive tape upper surface coats the moisture film (8) of a laminar flow；Pulse laser beam (1) penetrates flowing water film (8), irradiates in black tape table
Face carries out laser cleaning to entire silicon chip surface.
6. the method for laser cleaning silicon wafer as claimed in claim 5 or lens surface particle, which is characterized in that the flowing
Moisture film (8) be deionization moisture film (8), with a thickness of 1~1.5mm, flow velocity is 1cm/s~3cm/s；The black tape is black
Color polyester tape, with a thickness of 5-15 μm；Acrylic acid epoxy resin is with a thickness of 30-100 μm.
7. the method for laser cleaning silicon wafer as described in claim 1 or lens surface particle, which is characterized in that described to laser
Viscose with suction-operated is to be mixed by acrylic acid epoxy resin and nano carbon particle according to volume ratio 4:1, and viscose is thick
Degree is 30-100 μm.
8. the method for laser cleaning silicon wafer as claimed in claim 7 or lens surface particle, which is characterized in that the viscose is solid
After change, use power density for 1 × 105~5 × 105GW/cm2Pulse laser beam (1) irradiation there is suction-operated in laser
Gummed surface ablation formation rule blind hole (11) array；It is irradiated again using pulse laser beam (1) in four adjacent blind holes (11)
Middle position, that is, laser cleaning point (12) carries out laser cleaning to entire workpiece surface.
9. the method for laser cleaning silicon wafer as claimed in claim 8 or lens surface particle, which is characterized in that adjacent blind hole
The distance between (11) d1With the distance d of adjacent laser cleaning point (12)2It is 100-300 μm, the aperture of blind hole (11) is 40-
60 μm, depth be 20-40 μm.
10. the method for laser cleaning silicon wafer as described in claim 1 or lens surface particle, which is characterized in that described pair is swashed
There is light the viscose of suction-operated to be coated by following coating material,
The coating material composition be acrylic acid epoxy resin, nanometer silicone powder, polyurethane foams stabilizers and nano-carbon powder particle,
The volume content of middle acrylic acid epoxy resin is 60-70%, and the volume content of nanometer silicone powder is 5-8%, polyurethane foams stabilizers
Volume content be 6-8%, the volume content of nano-carbon powder particle is 20-25%；Coating layer thickness is 30-100 microns.
11. the method for laser cleaning silicon wafer as described in claim 1 or lens surface particle, which is characterized in that the arteries and veins
The pulse duration range of laser beam (1) is 10~300ns, and it is 50~60 μm that laser beam, which reaches diameter when absorbing layer surface, power
Density range is 106~107GW/cm2, the size of the dirt particle is 0.5~50 μm, the volume hundred of the acetone soln
Dividing concentration is 50%.
Applications Claiming Priority (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810177370.0A CN108405487A (en) | 2018-02-28 | 2018-02-28 | A kind of lossless laser cleaning method |
| CN2018101773700 | 2018-02-28 | ||
| CN201810172211.1A CN108325949A (en) | 2018-03-01 | 2018-03-01 | A kind of laser cleaning particulate dirt method |
| CN2018101722111 | 2018-03-01 | ||
| CN2018101752761 | 2018-03-02 | ||
| CN201810175276.1A CN108580441A (en) | 2018-03-02 | 2018-03-02 | A kind of method of laser cleaning lens |
| CN2018101796740 | 2018-03-05 | ||
| CN201810179674.0A CN108467664A (en) | 2018-03-05 | 2018-03-05 | A kind of laser cleaning assistant coating formula and coating cleaning |
| CN2018101812495 | 2018-03-06 | ||
| CN2018101826727 | 2018-03-06 | ||
| CN201810181249.5A CN108538708A (en) | 2018-03-06 | 2018-03-06 | A kind of technique of laser cleaning silicon chip |
| CN201810182672.7A CN108538709A (en) | 2018-03-06 | 2018-03-06 | A kind of efficient laser cleaning silicon chip technique |
Publications (2)
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| CN109671616A true CN109671616A (en) | 2019-04-23 |
| CN109671616B CN109671616B (en) | 2023-05-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910044747.XA Active CN109671616B (en) | 2018-02-28 | 2019-01-17 | Method for cleaning particles on surface of silicon wafer or lens by laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111167803A (en) * | 2019-12-14 | 2020-05-19 | 上海航翼高新技术发展研究院有限公司 | Laser wet cleaning method and device |
| CN114054420A (en) * | 2021-10-26 | 2022-02-18 | 中国电子科技集团公司第四十七研究所 | Method for removing silicon oil sticky dirt on surface of silicon-based chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142440A (en) * | 1993-11-19 | 1995-06-02 | Fujitsu Ltd | Particle removing method and semiconductor production system having particle removing means |
| CN101219430A (en) * | 2008-01-25 | 2008-07-16 | 清华大学 | Watt level full solid state ultraviolet laser cleaning machine and laser cleaning method |
| EP2168780A2 (en) * | 2008-09-29 | 2010-03-31 | Giesecke & Devrient GmbH | Safety marker for securing valuable objects |
| US20100258542A1 (en) * | 2008-01-18 | 2010-10-14 | Miasole | Laser polishing of a back contact of a solar cell |
| US20170170003A1 (en) * | 2015-12-11 | 2017-06-15 | Suss Microtec Photonic Systems Inc. | Sacrificial layer for post-laser debris removal systems and methods |
-
2019
- 2019-01-17 CN CN201910044747.XA patent/CN109671616B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142440A (en) * | 1993-11-19 | 1995-06-02 | Fujitsu Ltd | Particle removing method and semiconductor production system having particle removing means |
| US20100258542A1 (en) * | 2008-01-18 | 2010-10-14 | Miasole | Laser polishing of a back contact of a solar cell |
| CN101219430A (en) * | 2008-01-25 | 2008-07-16 | 清华大学 | Watt level full solid state ultraviolet laser cleaning machine and laser cleaning method |
| EP2168780A2 (en) * | 2008-09-29 | 2010-03-31 | Giesecke & Devrient GmbH | Safety marker for securing valuable objects |
| US20170170003A1 (en) * | 2015-12-11 | 2017-06-15 | Suss Microtec Photonic Systems Inc. | Sacrificial layer for post-laser debris removal systems and methods |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111167803A (en) * | 2019-12-14 | 2020-05-19 | 上海航翼高新技术发展研究院有限公司 | Laser wet cleaning method and device |
| CN114054420A (en) * | 2021-10-26 | 2022-02-18 | 中国电子科技集团公司第四十七研究所 | Method for removing silicon oil sticky dirt on surface of silicon-based chip |
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| CN109671616B (en) | 2023-05-05 |
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