CN108538708A - A kind of technique of laser cleaning silicon chip - Google Patents
A kind of technique of laser cleaning silicon chip Download PDFInfo
- Publication number
- CN108538708A CN108538708A CN201810181249.5A CN201810181249A CN108538708A CN 108538708 A CN108538708 A CN 108538708A CN 201810181249 A CN201810181249 A CN 201810181249A CN 108538708 A CN108538708 A CN 108538708A
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- CN
- China
- Prior art keywords
- silicon chip
- viscose
- black tape
- laser beam
- dirt
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02098—Cleaning only involving lasers, e.g. laser ablation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
Abstract
The present invention relates to field of surface treatment, and in particular to a kind of technique of laser cleaning silicon chip.After viscose is coated in the surface of silicon chip, particulate dirt is surrounded by viscose, and particulate dirt will be cured in viscose after drying；Black tape is coated before viscose is not dry, therefore black tape is bonded together with viscose；Pulse laser beam acts on the black tape very high to pulse laser beam absorptivity, generate shock wave, under the instantaneous thermodynamic activity of laser, black tape, viscose and be solidificated in viscose particulate dirt cracking at granularity be 100~300 particles fragment and flown away from from the surface of silicon chip, make particulate dirt from the surface to be treated of silicon chip detach；Silicon chip passes through after high-pressure purge, is put into 50% acetone soln and is cleaned by ultrasonic, final to obtain the silicon chip with clean surface to remove the viscose residue for adhering to silicon chip surface.Present invention can apply to the cleanings of semicon industry silicon chip.
Description
Technical field
The present invention relates to field of surface treatment, and in particular to a kind of technique of laser cleaning silicon chip.
Background technology
Integrated circuit board silicon chip usually requires to be cleaned before packaging, and silicon chip surface is attached in process to remove
Particulate dirt, to improve the performance of silicon chip.Adhesion mechanism and larger ruler of the particulate dirt of micro/nano level in lens surface
The adhesion mechanism of very little particulate dirt is entirely different, under the weight of itself, will produce plastic deformation, to make adhesion substantially
Degree rises, and causes conventional chemical cleaning and ultrasonic cleaning that can not remove, therefore the particulate dirt for washing micro-or nano size is
A problem in silicon chip aftertreatment technology.Laser cleaning is a kind of new and effective cleaning means, can be effectively removed a variety of
The surface contaminants of type, however, original surface texture can be destroyed since laser acts directly on silicon chip surface, it can not be straight
It connects for cleaning silicon chip surface.
Invention content
The purpose of the present invention is to provide a kind of laser cleaning silicon chip techniques, to remove the micro-nano meter ruler of silicon chip surface attachment
Very little particulate dirt.
In order to solve the above technical problems, the specific technical solution that the present invention uses is as follows：
A kind of laser cleaning silicon chip technique, which is characterized in that comprise the steps of：
Step 1：One layer of viscose is uniformly coated in the surface to be cleaned of silicon chip；
Step 2：Drying hardening is carried out to viscose；
Step 3：One layer of black tape is pasted in viscose upper surface；
Step 4：Pulse laser beam irradiation carries out laser cleaning in black glue belt surface, to entire silicon chip surface；
Step 5：Black tape is removed from silicon chip surface；
Step 6：Silicon chip passes through after high-pressure purge, is put into acetone soln and is cleaned by ultrasonic.
After viscose is coated in the surface of silicon chip, particulate dirt is surrounded by viscose, and particulate dirt will be cured after drying
In viscose；Pulse laser beam act on to pulse laser beam absorptivity be more than 50% black tape on, generate shock wave, swash
Under the instantaneous thermodynamic activity of light, viscose and be solidificated in viscose particulate dirt cracking at granularity be 100~300 μm fragment simultaneously
From the sur-face peeling of silicon chip, particulate dirt is made to be detached from the surface to be treated of silicon chip, the fragment dirt of stripping is sticked to black tape
Lower surface；Silicon chip is put into acetone soln after removal black tape be cleaned by ultrasonic to remove and adheres to the viscose of silicon chip surface
Residue.
The pulse laser beam acts on the upper surface of black tape, and black tape and viscose are sequentially coated at waiting for clearly for silicon chip
It washes on surface.
The pulse duration range of the pulse laser beam is 10~300ns, power density ranging from 106~107GW/cm2。
The black tape is black polyester adhesive tape, and the absorptivity to pulse laser beam is more than 50%；Thickness is 5-10 μm.
The composition of the viscose is acrylic acid epoxy resin, easy to crack under external force after dry, and is soluble in third
The organic solvents such as ketone；The thickness of viscose is 30-100 μm.
The size of the dirt particle is 0.5~50 μm, and material is silicon or other kinds of dirt, using conventional silicon wafers
Cleaning can not remove.
The concentration expressed in percentage by volume of the acetone soln is 50%.
The operation principle of the present invention is that：After viscose is coated in the surface of silicon chip, particulate dirt is surrounded by viscose, by drying
Particulate dirt will be cured in viscose afterwards；Black tape is bonded together with brittleness viscose；Pulse laser beam is acted on to pulse
On the very high black tape of laser beam absorption rate, shock wave is generated, under the instantaneous thermodynamic activity of laser, viscose and is solidificated in viscose
Fragment that interior particulate dirt cracking is 100~300 μm at granularity and from the sur-face peeling of silicon chip, the dirt fragment of stripping is sticked to
The lower surface of black tape detaches black tape from silicon chip surface；Silicon chip passes through high-pressure purge, can blow away and be attached to silicon chip
The dirt fragment on surface；Silicon chip is put into 50% acetone soln to be cleaned by ultrasonic, can remove and adhere to silicon chip surface
Viscose residue, it is final to obtain the silicon chip with clean surface.
The device have the advantages that：It, can be well using brittle acrylic acid epoxy resin as viscose material
Coated particle dirt, and it is easy to crack after hardening, 100~300 μm of particle can be formed under laser beam heating power and shock wave
Dirt is removed from silicon chip surface, finally particulate dirt is made to remove, cleaning performance is good；Black tape can be such that laser beam does not directly make
Used in silicon chip surface, damaged from silicon chip surface is avoided by laser thermal effect；Black tape can ensure that dirt fragment will not be
It splashes in air under laser thermodynamic activity, environmental protection；Under the thermodynamic activity of laser beam, the overburden size of formation is more than
Diameter when laser beam irradiation is to black glue belt surface, therefore be without overlap joint, the distance between hot spot between adjacent laser hot spot
2~5 times of spot diameter, can increase substantially cleaning efficiency.
Description of the drawings
Fig. 1 is laser cleaning silicon chip devices schematic diagram.
In figure：1 pulse laser beam, 2 black tape, 3 viscose, 4 particulate dirt, 5 silicon chip.
Specific implementation mode
Preferably to illustrate the implementation detail of the present invention, in the following with reference to the drawings and specific embodiments to the technical side of the present invention
Case is described in further details.
The present invention a kind of laser cleaning silicon chip technique as shown in Figure 1, including workbench pulse laser beam 1, black tape 2,
Viscose 3, particulate dirt 4 and silicon chip 5.Black tape 2 and viscose 3 are sequentially coated in the surface to be cleaned of silicon chip 5.
Embodiment one：
In this example, pulse laser single pulse energy is 1mJ, frequency 100KHZ, 1 arteries and veins of pulse laser beam sent out
Width is 10ns, power density 106GW/cm2, spot diameter is when reaching the upper surface of black tape 2 after pulse laser beam line focus
50μm；Black tape 2 is black polyester adhesive tape, and thickness is about 10 μm；The main component of viscose 3 is acrylic acid epoxy resin, thick
Degree is 60 μm；The material of particulate dirt 4 is silicon, and size distribution is 0.5~50 μm.
Step 1：One layer of viscose 3 is uniformly coated in the surface to be cleaned of silicon chip 5；
Step 2：Drying hardening is carried out to viscose 3；
Step 3：One layer of black tape 2 is pasted in 3 upper surface of viscose；
Step 4：The irradiation of pulse laser beam 1 carries out laser cleaning on 2 surface of black tape, to 5 surface of entire silicon chip；
Step 5：Black tape 2 is removed from 5 surface of silicon chip；
Step 6：Silicon chip 5 is cleaned by ultrasonic by after high-pressure purge, being put into 50% acetone soln.
Laser cleaning efficiency is 2.4m2/h.After testing, the particulate dirt density on 5 surface of silicon chip is 9.7 before laser cleaning
/ cm2, after laser cleaning, the particulate dirt density on 5 surface of silicon chip is 0.7/cm2。
Embodiment two
In this example, pulse laser single pulse energy is 0.5mJ, frequency 150KHZ, the pulse laser beam 1 sent out
Pulsewidth is 100ns, power density 5*106GW/cm2, hot spot when reaching the upper surface of black tape 2 after pulse laser beam line focus
A diameter of 55 μm；Black tape 2 is black polyester adhesive tape, and thickness is about 10 μm；The main component of viscose 3 is acrylic acid epoxy tree
Fat, thickness are 60 μm；The material of particulate dirt 4 is silicon, and size distribution is 0.5~50 μm.
Step 1：One layer of viscose 3 is uniformly coated in the surface to be cleaned of silicon chip 5；
Step 2：Drying hardening is carried out to viscose 3；
Step 3：One layer of black tape 2 is pasted in 3 upper surface of viscose；
Step 4：The irradiation of pulse laser beam 1 carries out laser cleaning on 2 surface of black tape, to 5 surface of entire silicon chip；
Step 5：Black tape 2 is removed from 5 surface of silicon chip；
Step 6：Silicon chip 5 is cleaned by ultrasonic by after high-pressure purge, being put into 50% acetone soln.
Laser cleaning efficiency is 4.8m2/h.After testing, the particulate dirt density on 5 surface of silicon chip is 11.4 before laser cleaning
/ cm2, after laser cleaning, the particulate dirt density on 5 surface of silicon chip is 1.3/cm2。
Embodiment three
In this example, pulse laser single pulse energy is 1.5mJ, frequency 200KHZ, the pulse laser beam 1 sent out
Pulsewidth is 300ns, power density 107GW/cm2, hot spot is straight when reaching the upper surface of black tape 2 after pulse laser beam line focus
Diameter is 60 μm；Black tape 2 is black polyester adhesive tape, and thickness is about 10 μm；The main component of viscose 3 is acrylic acid epoxy tree
Fat, thickness are 60 μm；The material of particulate dirt 4 is silicon, and size distribution is 0.5~50 μm.
Step 1：One layer of viscose 3 is uniformly coated in the surface to be cleaned of silicon chip 5；
Step 2：Drying hardening is carried out to viscose 3；
Step 3：One layer of black tape 2 is pasted in 3 upper surface of viscose；
Step 4：The irradiation of pulse laser beam 1 carries out laser cleaning on 2 surface of black tape, to 5 surface of entire silicon chip；
Step 5：Black tape 2 is removed from 5 surface of silicon chip；
Step 6：Silicon chip 5 is cleaned by ultrasonic by after high-pressure purge, being put into 50% acetone soln.
Laser cleaning efficiency is 7.2m2/h.After testing, the particulate dirt density on 5 surface of silicon chip is 10.6 before laser cleaning
/ cm2, after laser cleaning, the particulate dirt density on 5 surface of silicon chip is 0.8/cm2。
Claims (6)
1. a kind of laser cleaning silicon chip technique, which is characterized in that comprise the steps of：
Step 1：One layer of viscose is uniformly coated in the surface to be cleaned of silicon chip；
Step 2：Drying hardening is carried out to viscose；
Step 3：One layer of black tape is pasted in viscose upper surface；
Step 4：Pulse laser beam irradiation carries out laser cleaning in black glue belt surface, to entire silicon chip surface；
Step 5：Black tape is removed from silicon chip surface；
Step 6：Silicon chip passes through after high-pressure purge, is put into acetone soln and is cleaned by ultrasonic；
After viscose is coated in the surface of silicon chip, particulate dirt is surrounded by viscose, and particulate dirt will be cured in glutinous after drying
In glue；Pulse laser beam act on to pulse laser beam absorptivity be more than 50% black tape on, generate shock wave, in laser
Under instantaneous thermodynamic activity, fragment that viscose and the particulate dirt cracking that is solidificated in viscose are 100~300 μm at granularity and from silicon
The sur-face peeling of piece, makes particulate dirt be detached from the surface to be treated of silicon chip, and the fragment dirt of stripping is sticked to the following table of black tape
Face；Removal black tape after by silicon chip be put into acetone soln carry out be cleaned by ultrasonic can remove adhere to silicon chip surface viscose it is residual
Slag.
2. a kind of laser cleaning silicon chip technique as described in claim 1, which is characterized in that the pulsewidth of the pulse laser beam
Ranging from 10~300ns, power density ranging from 106~107GW/cm2。
3. a kind of laser cleaning silicon chip technique as described in claim 1, which is characterized in that the black tape is black polyester
Adhesive tape, the absorptivity to pulse laser beam are more than 50%；Thickness is 5-10 μm.
4. a kind of laser cleaning silicon chip technique as described in claim 1, which is characterized in that the composition of the viscose is propylene
Sour epoxy resin, it is easy to crack under external force after dry, and it is soluble in acetone and other organic solvent；The thickness of viscose is 30-100
μm。
5. a kind of laser cleaning silicon chip technique as described in claim 1, which is characterized in that the size of the dirt particle is
0.5~50 μm, material is silicon or other kinds of dirt, can not be removed using conventional silicon wafers cleaning.
6. a kind of laser cleaning silicon chip technique as described in claim 1, which is characterized in that the volume hundred of the acetone soln
Divide a concentration of 50%.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810181249.5A CN108538708A (en) | 2018-03-06 | 2018-03-06 | A kind of technique of laser cleaning silicon chip |
| CN201910044747.XA CN109671616B (en) | 2018-02-28 | 2019-01-17 | Method for cleaning particles on surface of silicon wafer or lens by laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810181249.5A CN108538708A (en) | 2018-03-06 | 2018-03-06 | A kind of technique of laser cleaning silicon chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108538708A true CN108538708A (en) | 2018-09-14 |
Family
ID=63486776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810181249.5A Withdrawn CN108538708A (en) | 2018-02-28 | 2018-03-06 | A kind of technique of laser cleaning silicon chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108538708A (en) |
-
2018
- 2018-03-06 CN CN201810181249.5A patent/CN108538708A/en not_active Withdrawn
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180914 |
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| WW01 | Invention patent application withdrawn after publication |