CN117712068A - Wafer bonding structure, temporary bonding method and laser de-bonding method - Google Patents
Wafer bonding structure, temporary bonding method and laser de-bonding method Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83026—Applying a precursor material to the bonding area
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/83224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/83498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/83499—Material of the matrix
- H01L2224/835—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83517—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/83524—Aluminium [Al] as principal constituent
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Abstract
The invention discloses a wafer bonding structure, a temporary bonding method and a laser bonding method. The bonding is temporary bonding; the wafer structure comprises a bearing wafer, a photosensitive response layer, a blocking layer, a bonding layer and a device wafer from top to bottom or from bottom to top in sequence; or the wafer bonding structure comprises a bearing wafer, a photosensitive response layer, an adhesive layer, a barrier layer and a device wafer from top to bottom or from bottom to top in sequence; or the wafer bonding structure comprises a bearing wafer, an adhesive layer, a photosensitive response layer, a barrier layer and a device wafer from top to bottom or from bottom to top in sequence. In the wafer bonding pair, the invention realizes nondestructive laser de-bonding by designing the response layer, the blocking layer and the bonding layer, has the advantages of simple operation, high reliability, good universality and the like, and the surface of the prepared ultrathin device wafer can be kept intact, thereby being beneficial to improving the yield and efficiency of ultrathin chips.
Description
Technical Field
The invention relates to the technical field of wafer level packaging and the technical field of laser processing, in particular to a wafer temporary bonding method and a laser de-bonding method.
Background
With the advent of the information age, 5G communications, internet of things and wearable device markets have formally entered the explosion period, greatly changing the manufacturing and usage manners of electronic products. Currently, the transistor size of integrated circuits has approached a limit and moore's law has evolved. As an important subverted technology that continues and surpasses moore's law, advanced packaging processes can meet the increasing demands of high-end chips in terms of miniaturization, high density, multifunction, low power consumption, and low cost. In order to solve the problems of thinning of chips or packages and holding of ultra-thin fragile wafers in advanced packaging processes, a temporary bonding/debonding (TBDB) process is being created. Conventional TBDB techniques include mechanical disassembly, thermal slip and wet chemical dissolution. However, the methods have the defects of easy damage, low yield, low throughput and the like in large-scale application, and the development of a nondestructive TBDB technology for manufacturing high-end ultrathin chips has important significance. At present, the advantages of the laser stripping technology in the technical field of advanced electronic packaging TBDB gradually appear, and a feasible solution is expected to be provided for the productivity and yield of large-scale stripping of ultrathin devices. It has been demonstrated that increasing the laser energy density can effectively increase the laser debonding efficiency. However, the potential for slight damage to ultra-thin device wafers during strong laser debonding has not been effectively addressed due to transient high temperature, laser leakage, shock wave, acoustic wave and stress wave effects. Therefore, developing a simple, highly reliable and universally applicable debonding method is critical to improving the manufacturing yield of high-end ultra-thin devices.
Disclosure of Invention
The invention provides a temporary bonding method and a laser bonding method for wafers. In the wafer bonding pair, the invention realizes nondestructive laser de-bonding by designing the response layer, the blocking layer and the bonding layer, has the advantages of simple operation, high reliability, good universality and the like, and the surface of the prepared ultrathin device wafer can be kept intact, thereby being beneficial to improving the yield and efficiency of ultrathin chips.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
in one aspect, the present invention provides a wafer bonding structure, the bonding being temporary bonding; the wafer bonding structure comprises a bearing wafer, a photosensitive response layer, a blocking layer, a bonding layer and a device wafer from top to bottom or from bottom to top in sequence; or the wafer bonding structure comprises a bearing wafer, a photosensitive response layer, an adhesive layer, a blocking layer and a device wafer from top to bottom or from bottom to top in sequence; or the wafer bonding structure comprises a bearing wafer, an adhesive layer, a photosensitive response layer, a blocking layer and a device wafer from top to bottom or from bottom to top in sequence.
As a preferred embodiment, the device wafer is an ultrathin device wafer, and the thickness of the ultrathin finger is less than or equal to 200 mu m;
preferably, the carrier wafer is made of a light transmissive material.
As a preferred embodiment, the preparation method of the photosensitive response layer is coating or physical vapor deposition;
preferably, the ablation threshold of the photosensitive response layer is more than or equal to 200mJ/cm 2
Preferably, the material of the photosensitive response layer is a photodegradable material, and the photodegradable product includes a gas; in some embodiments, the material of the photosensitive response layer may be selected from hydrogenated amorphous silicon a-Si: H and WLP LB210 of Shenzhen market semiconductor materials Co., ltd;
preferably, the thickness of the photosensitive response layer is 0.05-20 μm;
in the technical scheme of the invention, the material of the photosensitive response layer has high absorbance to laser with energy density higher than an ablation threshold, and the high absorbance is more than or equal to 90%; the photosensitive response layer can be rapidly decomposed under the irradiation of the laser beam with the energy density, gas byproducts are released, and gas shock waves are generated to help the stripping of the bearing wafer.
As a preferred embodiment, the preparation method of the barrier layer is selected from at least one of coating, sputtering and deposition;
preferably, the material of the barrier layer is selected from SiO 2 And any one of metals;
preferably, the thickness of the barrier layer is 1-20 μm;
in the technical scheme of the invention, the barrier layer can be arranged between the photosensitive response layers/bonding layers, between the device wafers/bonding layers or between the device wafers/photosensitive response layers, so that the microstructure of the photosensitive response layers and the corresponding layer interfaces are improved; the blocking layer has certain light absorption or reflectivity, can further reflect and absorb laser energy in laser de-bonding, reduces the risk of laser leakage of the photosensitive response layer due to possible defects, protects a device wafer from light damage and heat damage, and can prevent plasma etching and heat damage and buffer laser-induced shock waves, so that the yield of an ultrathin chip is improved.
As a preferred embodiment, the method of preparing the adhesive layer is selected from at least one of spin coating, drop coating, and blade coating;
preferably, the bonding strength of the bonding layer is 0.1-1 MPa;
preferably, the adhesive layer is made of a material having viscoelasticity; the material with the viscoelasticity is selected from any one of acrylic resin, phenolic resin, epoxy resin and organic silica gel; in some embodiments, the bonding layer may be a WLP TB4130, WLP TB4171, WLP TB1238, of Shenzhen market semiconductor materials, inc.;
preferably, the thickness of the adhesive layer is 20-100 μm;
in the technical scheme of the invention, the bonding layer can play a role in buffering vibration isolation and energy absorption on laser-induced shock waves, sound waves and stress waves.
In yet another aspect, the present invention provides a temporary wafer bonding method for preparing the above wafer bonding structure, including the steps of:
preparing a photosensitive response layer on the surface of the bearing wafer; preparing a barrier layer on the surface of the photosensitive response layer; preparing a bonding layer on the surface of a device wafer; bonding the bearing wafer and the device wafer by taking the barrier layer and the bonding layer as bonding surfaces to obtain bonding pairs;
or alternatively, the first and second heat exchangers may be,
preparing a photosensitive response layer on the surface of the bearing wafer; preparing a barrier layer on the surface of the device wafer; preparing a bonding layer on the surface of the barrier layer; bonding the bearing wafer and the device wafer by taking the photosensitive response layer and the bonding layer as bonding surfaces to obtain bonding pairs;
or alternatively, the first and second heat exchangers may be,
preparing a bonding layer on the surface of the bearing wafer; preparing a barrier layer on the surface of the device wafer; preparing a photosensitive response layer on the surface of the barrier layer; and bonding the bearing wafer and the device wafer by taking the photosensitive response layer and the bonding layer as bonding surfaces to obtain bonding pairs.
As a preferred embodiment, the method further comprises thinning the device wafer in the bonding pair;
preferably, the thickness of the ultrathin device wafer obtained by the thinning treatment is less than or equal to 200 mu m.
In still another aspect, the present invention provides a laser debonding method of the foregoing temporary wafer bonding method, including irradiating a photosensitive response layer with a laser beam through the carrier wafer, debonding the photosensitive response layer by photodegradation of the photosensitive response layer, to obtain a device wafer with a barrier layer, a bonding layer, or a device wafer with a barrier layer; wherein the energy density of the laser beam is above the ablation threshold of the photosensitive response layer.
The technical scheme has the following advantages or beneficial effects: the invention designs the photosensitive response layer, the blocking layer and the bonding layer in the bonding pair based on the interaction mode of laser and materials, and prevents the device wafer from being influenced by strong laser leakage, instant high temperature heat, shock wave, sound wave and stress wave in the bonding and laser de-bonding process by controlling the lamination sequence, the thickness and the material types of the photosensitive response layer, the blocking layer and the bonding layer, thereby realizing the nondestructive stripping of the ultrathin device wafer. The materials of the photosensitive response layer, the barrier layer and the bonding layer adopted in the invention have excellent chemical corrosion resistance and high temperature resistance, and can resist the chemical environment and high temperature conditions in the semiconductor manufacturing process. The ultra-thin device wafer obtained by the de-bonding method can be further cleaned, diced and the like to obtain an ultra-thin chip. The wafer bonding method provided by the invention has the advantages of simplicity in operation, high reliability, good universality and the like, and the surface of the prepared ultrathin device wafer can be kept intact, so that the yield and the efficiency of the ultrathin chip are improved.
Drawings
FIG. 1 is a flow chart of the preparation of an ultra-thin chip in example 1 of the present invention.
FIG. 2 is a laminate (quartz glass/a-Si: H/SiO) prepared in step S2 of example 1 of the present invention 2 ) A graph of transmittance of light waves of 200 to 800nm as measured by an ultraviolet-visible spectrophotometer.
FIG. 3 is a schematic view showing the ablation of a laminate by a laser in step S6 of example 1 of the present invention.
Fig. 4 is a view showing the spot ablation profile of the surface of the transparent carrier wafer in step S6 of embodiment 1 of the present invention.
Fig. 5 is a physical view of the device layer, adhesive layer and carrier layer obtained after the peeling in step S7 of example 1 of the present invention.
FIG. 6 is a photo-mask diagram of the Al layer on the wafer surface of the ultra-thin device in step S7 of embodiment 1 of the present invention.
Detailed Description
The following examples are only some, but not all, of the examples of the invention. Accordingly, the detailed description of the embodiments of the invention provided below is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to fall within the scope of the present invention.
In the present invention, all the equipment, raw materials and the like are commercially available or commonly used in the industry unless otherwise specified. The methods in the following examples are conventional in the art unless otherwise specified.
Example 1:
the embodiment provides an ultrathin chip, the preparation process is shown in fig. 1, and the preparation method comprises the following steps:
s1, quartz glass with the thickness of 500 mu m is used as a transparent bearing wafer 1, firstly, a layer of hydrogenated amorphous silicon a-Si with the thickness of 50nm is deposited on the surface of the transparent bearing wafer 1 through plasma enhanced chemical vapor deposition, and H is used as a photosensitive response layer 2;
s2 a polycrystal SiO with the thickness of 1 mu m is deposited on the surface of the photosensitive response layer 2 through plasma enhanced chemical vapor deposition 2 As a barrier layer 3; the laminate (quartz glass/a-Si: H/SiO) prepared in this step 2 ) The transmittance of the laminate in the wavelength band of 400nm or less is almost 0 as seen from FIG. 2, showing that laser leakage can be effectively prevented in this range;
s3, sputtering a layer of Al with the thickness of 1 μm on the surface of a silicon wafer with the thickness of 600 μm as a device wafer 4, and spin-coating a layer of WLP TB4130 (with the viscosity of 0.5 MPa) with the thickness of 30 μm on the surface of the silicon wafer as a bonding layer 5;
s4, taking the barrier layer 3 and the bonding layer 5 as bonding surfaces, and forming a bonding pair 6 of the transparent carrier wafer 1 and the device wafer 4;
s5, carrying out a back thinning process on the device wafer 4 in the bonding pair 6 to obtain a thinned bonding pair 7 (the thickness of the thinned device wafer is 150 mu m);
s6, laser bonding:
setting parameters of a laser transmitter as follows: the laser wavelength is 355nm, and the single pulse energy density of the light beam is 500mJ/cm 2 Spot size is about 50 μm×50 μm, and scan pitch is 50 μm; the laser beam 8 generated by the laser transmitter using the parameters described above is irradiated onto the photosensitive response layer 2 through the transparent carrier wafer 1, in the process: the ultraviolet laser beam triggers the photosensitive response layer 2 to decompose to release a large amount of gas and even generate high-density plasma, thereby forming a high-temperature and high-pressure environment, and bondingUnder the space constraint action of the combination, obvious limited-area enhanced shock waves are generated, so that stress waves and sound waves are generated at two sides of an interface, and finally the peeled ultrathin device wafer 9 with the bonding layer is obtained; the interaction mode between the laser and the laminated body in the laser bonding process in the step is shown in fig. 3; the morphology graph of the spot ablation on the surface of the transparent carrier wafer is shown in fig. 4;
s7, removing the bonding layer 5 from the laminated body obtained in the step S6 to obtain an ultrathin device wafer 10; the physical diagrams of the device layer (ultrathin device wafer), the bonding layer and the bearing layer (transparent bearing wafer) obtained in the step are shown in fig. 5; the mirror image of the metal Al on the surface of the ultrathin device wafer is shown in fig. 6, and as can be seen from fig. 5 and 6, the metal Al on the surface of the ultrathin device wafer and the surface of the bonding layer are not damaged, and the original appearance is maintained;
and S8, dicing the ultrathin device wafer 10 to obtain the undamaged ultrathin chips 11.
According to the embodiment, the stacked structure design of the photosensitive response layer, the blocking layer and the bonding layer can reasonably play a role in buffering vibration isolation and energy absorption on laser induced shock waves, sound waves and stress waves, and the device layer is prevented from being damaged by any light and heat, so that the nondestructive stripping of the ultrathin device wafer is realized.
The foregoing is only a preferred embodiment of the invention, it being noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the invention.
Claims (8)
1. A wafer bonding structure, wherein the bonding is temporary bonding; the wafer bonding structure comprises a bearing wafer, a photosensitive response layer, a blocking layer, a bonding layer and a device wafer from top to bottom or from bottom to top in sequence; or the wafer bonding structure comprises a bearing wafer, a photosensitive response layer, an adhesive layer, a blocking layer and a device wafer from top to bottom or from bottom to top in sequence; or the wafer bonding structure comprises a bearing wafer, an adhesive layer, a photosensitive response layer, a blocking layer and a device wafer from top to bottom or from bottom to top in sequence.
2. The wafer bonding structure of claim 1, wherein the device wafer is an ultra-thin device wafer, the ultra-thin finger thickness being 200 μm or less;
preferably, the carrier wafer is made of a light transmissive material.
3. The wafer bonding structure of claim 1, wherein the photosensitive response layer is prepared by coating or physical vapor deposition;
preferably, the ablation threshold of the photosensitive response layer is more than or equal to 200mJ/cm 2
Preferably, the material of the photosensitive response layer is a photodegradable material, and the photodegradable product includes a gas;
preferably, the thickness of the photosensitive response layer is 0.05 to 20 μm.
4. The wafer bonding structure of claim 1, wherein the barrier layer is prepared by a method selected from at least one of coating, sputtering, and deposition;
preferably, the material of the barrier layer is selected from SiO 2 And any one of metals;
preferably, the thickness of the barrier layer is 1 to 20 μm.
5. The wafer bonding structure of claim 1, wherein the adhesive layer is prepared by a method selected from at least one of spin coating, drop coating, and blade coating;
preferably, the bonding strength of the bonding layer is 0.1-1 MPa;
preferably, the adhesive layer is made of a material having viscoelasticity;
preferably, the thickness of the adhesive layer is 20 to 100 μm.
6. A method of temporary bonding wafers for preparing the wafer bonding structure of any one of claims 1-5, comprising the steps of:
preparing a photosensitive response layer on the surface of the bearing wafer; preparing a barrier layer on the surface of the photosensitive response layer; preparing a bonding layer on the surface of a device wafer; bonding the bearing wafer and the device wafer by taking the barrier layer and the bonding layer as bonding surfaces to obtain bonding pairs;
or alternatively, the first and second heat exchangers may be,
preparing a photosensitive response layer on the surface of the bearing wafer; preparing a barrier layer on the surface of the device wafer; preparing a bonding layer on the surface of the barrier layer; bonding the bearing wafer and the device wafer by taking the photosensitive response layer and the bonding layer as bonding surfaces to obtain bonding pairs;
or alternatively, the first and second heat exchangers may be,
preparing a bonding layer on the surface of the bearing wafer; preparing a barrier layer on the surface of the device wafer; preparing a photosensitive response layer on the surface of the barrier layer; and bonding the bearing wafer and the device wafer by taking the photosensitive response layer and the bonding layer as bonding surfaces to obtain bonding pairs.
7. The wafer temporary bonding method according to claim 6, further comprising thinning the device wafer in the bonding pair;
preferably, the thickness of the ultrathin device wafer obtained by the thinning treatment is less than or equal to 200 mu m.
8. A laser debonding method for the temporary wafer bonding method of claim 6, comprising irradiating a photosensitive response layer with a laser beam through the carrier wafer, debonding the photosensitive response layer by photodegradation of the photosensitive response layer, and obtaining a device wafer with a barrier layer, an adhesive layer, or a device wafer with a barrier layer; wherein the energy density of the laser beam is above the ablation threshold of the photosensitive response layer.
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| CN117912978A (en) * | 2024-03-18 | 2024-04-19 | 成都莱普科技股份有限公司 | Method for rapidly judging laser de-bonding interface |
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| CN117912978A (en) * | 2024-03-18 | 2024-04-19 | 成都莱普科技股份有限公司 | Method for rapidly judging laser de-bonding interface |
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