CN109643973B - 集成放大器 - Google Patents
集成放大器 Download PDFInfo
- Publication number
- CN109643973B CN109643973B CN201680088735.1A CN201680088735A CN109643973B CN 109643973 B CN109643973 B CN 109643973B CN 201680088735 A CN201680088735 A CN 201680088735A CN 109643973 B CN109643973 B CN 109643973B
- Authority
- CN
- China
- Prior art keywords
- cancellation
- signal
- integrated amplifier
- input
- input signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003321 amplification Effects 0.000 claims abstract description 44
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 44
- 230000002238 attenuated effect Effects 0.000 claims abstract description 7
- 238000004891 communication Methods 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000011295 pitch Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3223—Modifications of amplifiers to reduce non-linear distortion using feed-forward
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
- H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
- H03F2201/3218—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion the main amplifier or error amplifier being a feedforward amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2016/070034 WO2018036627A1 (fr) | 2016-08-25 | 2016-08-25 | Amplificateur intégré |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109643973A CN109643973A (zh) | 2019-04-16 |
CN109643973B true CN109643973B (zh) | 2022-05-13 |
Family
ID=56799473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680088735.1A Active CN109643973B (zh) | 2016-08-25 | 2016-08-25 | 集成放大器 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN109643973B (fr) |
WO (1) | WO2018036627A1 (fr) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1201293A (zh) * | 1997-01-31 | 1998-12-09 | 三星电子株式会社 | 线性功率放大器和用于消除互调失真信号的方法 |
US6172564B1 (en) * | 1999-07-30 | 2001-01-09 | Eugene Rzyski | Intermodulation product cancellation circuit |
KR20020009678A (ko) * | 2000-07-26 | 2002-02-02 | 윤종용 | 이동 통신 단말기에서 인터모듈레이션 필터를 이용한 수신회로 |
CN1531776A (zh) * | 2000-11-03 | 2004-09-22 | �����ɷ� | 使电子装置线性化的电路 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6781467B2 (en) * | 2003-01-24 | 2004-08-24 | Qualcomm Incorporated | High linearity low noise amplifier |
EP1719244B1 (fr) * | 2004-02-17 | 2009-10-28 | TELEFONAKTIEBOLAGET LM ERICSSON (publ) | Amplificateur a polarisation dynamique |
KR100631973B1 (ko) * | 2005-03-02 | 2006-10-11 | 삼성전기주식회사 | 가변이득 광대역 증폭기 |
FI20055401A0 (fi) * | 2005-07-11 | 2005-07-11 | Nokia Corp | Parannuksia integroituihin RF-piireihin |
KR100829780B1 (ko) * | 2007-02-27 | 2008-05-16 | 삼성전자주식회사 | 3차 상호 변조 왜곡을 감소시킨 저잡음 증폭기 및 신호증폭 방법 |
KR101400862B1 (ko) * | 2007-09-19 | 2014-05-28 | 삼성전자주식회사 | 무선통신시스템에서 저잡음 증폭 장치 및 방법 |
US7936220B2 (en) * | 2008-12-12 | 2011-05-03 | Qualcomm, Incorporated | Techniques for improving amplifier linearity |
US8373503B1 (en) * | 2011-12-12 | 2013-02-12 | Linear Technology Corporation | Third order intermodulation cancellation for RF transconductors |
-
2016
- 2016-08-25 WO PCT/EP2016/070034 patent/WO2018036627A1/fr active Application Filing
- 2016-08-25 CN CN201680088735.1A patent/CN109643973B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1201293A (zh) * | 1997-01-31 | 1998-12-09 | 三星电子株式会社 | 线性功率放大器和用于消除互调失真信号的方法 |
US6172564B1 (en) * | 1999-07-30 | 2001-01-09 | Eugene Rzyski | Intermodulation product cancellation circuit |
KR20020009678A (ko) * | 2000-07-26 | 2002-02-02 | 윤종용 | 이동 통신 단말기에서 인터모듈레이션 필터를 이용한 수신회로 |
CN1531776A (zh) * | 2000-11-03 | 2004-09-22 | �����ɷ� | 使电子装置线性化的电路 |
Non-Patent Citations (2)
Title |
---|
"A 20 GHz power amplifier with IM3 distortion cancellation by load-split derivative superposition";Kun-Yao Kao等;《2016 IEEE MTT-S International Microwave Symposium (IMS)》;20160811;1-4 * |
"一种基于五类线的远端微功率模块的研究与设计";汪锋;《中国优秀博硕士学位论文全文数据库(硕士) 信息科技辑》;20150515;I136-623 * |
Also Published As
Publication number | Publication date |
---|---|
WO2018036627A1 (fr) | 2018-03-01 |
CN109643973A (zh) | 2019-04-16 |
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