CN109643378B - Ultrasonic transducer and electronic device - Google Patents
Ultrasonic transducer and electronic device Download PDFInfo
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Classifications
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- G—PHYSICS
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- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V10/00—Arrangements for image or video recognition or understanding
- G06V10/10—Image acquisition
- G06V10/12—Details of acquisition arrangements; Constructional details thereof
- G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
- G06V10/147—Details of sensors, e.g. sensor lenses
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/40—Spoof detection, e.g. liveness detection
- G06V40/45—Detection of the body part being alive
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- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/18—Methods or devices for transmitting, conducting or directing sound
- G10K11/26—Sound-focusing or directing, e.g. scanning
- G10K11/28—Sound-focusing or directing, e.g. scanning using reflection, e.g. parabolic reflectors
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- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K9/00—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers
- G10K9/12—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated
- G10K9/122—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated using piezoelectric driving means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
Abstract
The application provides an ultrasonic transducer spare and electron device, this ultrasonic transducer spare includes: the ultrasonic transducer comprises a sensing medium layer, an ultrasonic receiving layer capable of receiving ultrasonic waves and an ultrasonic transmitting layer capable of transmitting the ultrasonic waves, wherein the ultrasonic transmitting layer and the ultrasonic receiving layer are arranged below the sensing medium layer, the ultrasonic transducer provided by the application achieves the purpose that the ultrasonic transducer has strong ultrasonic transmitting capacity and good receiving effect, and the problem that the ultrasonic transducer performance is affected due to poor ultrasonic generating capacity of the existing ultrasonic transducer is solved.
Description
Technical Field
The present disclosure relates to the field of ultrasound imaging technologies, and in particular, to an ultrasound transducer and an electronic device.
Background
With the development of the biometric technology, more and more terminals are equipped with biometric chips. The micro-mechanical ultrasonic transducer (capacitive micromachined urtrosonic transducer, CMUT) is a common biological recognition sensor, and the micro-mechanical ultrasonic transducer actively transmits high-frequency sound waves to reach the surface of a living body through a screen, then collects echoes of the ultrasonic waves in a pressing area to form a skin characteristic image, and finally compares the skin characteristic image with a stored image to finish the functions of fingerprint recognition, living body detection and the like.
At present, a CMUT generally comprises a substrate, a lower electrode, an etching sacrificial layer, a supporting layer, a vibrating membrane layer and an upper electrode which are sequentially arranged, and then the array control of the lower electrode is used for realizing the independent control of the array elements of an ultrasonic transducer; in contrast, the vibrating diaphragm layer vibrates under the action of ultrasonic waves, the capacitance between the two electrode plates changes, and ultrasonic wave reception is achieved through detection of the change, namely, ultrasonic wave transmission and reception are completed through cooperation of the lower electrode, the vibrating diaphragm layer and the upper electrode.
However, in the above-mentioned ultrasonic transducer, the ultrasonic wave is emitted outwards by the vibration of the diaphragm layer, but when the vibration of the diaphragm layer emits the ultrasonic wave, the emission capability is often poor, thus greatly reducing the performance of the ultrasonic transducer.
Disclosure of Invention
The application provides an ultrasonic transducer and an electronic device, which realize the purpose that the ultrasonic transducer has stronger ultrasonic emission capability and solve the problem that the performance of the ultrasonic transducer is reduced due to the poor ultrasonic emission capability of the traditional CMUT
In a first aspect, the present application provides an ultrasound transducer device comprising: the ultrasonic sensor comprises a sensing medium layer, an ultrasonic receiving layer capable of receiving ultrasonic waves and an ultrasonic transmitting layer capable of transmitting the ultrasonic waves, wherein the ultrasonic transmitting layer and the ultrasonic receiving layer are arranged below the sensing medium layer.
In a specific embodiment of the present application, specifically, the ultrasonic wave emitting layer includes a first electrode layer, a piezoelectric layer, and a second electrode layer, where the first electrode layer and the second electrode layer respectively cover an upper surface and a lower surface of the piezoelectric layer, and the piezoelectric layer is configured to emit ultrasonic waves over the entire surface when an ac voltage is applied between the first electrode layer and the second electrode layer.
In a specific embodiment of the present application, the piezoelectric layer is a film layer made of any one of the following materials:
piezoelectric ceramics, piezoelectric single crystals or piezoelectric polymer materials;
the first electrode layer and the second electrode layer are film layers made of any one of aluminum, copper, silver and nickel.
In a specific embodiment of the present application, specifically, projection areas of the first electrode layer and the second electrode layer on the piezoelectric layer are respectively and completely overlapped with the front and back sides of the piezoelectric layer.
In a specific embodiment of the present application, specifically, the method further includes: and the ultrasonic wave transmitting layer and the ultrasonic wave receiving layer are arranged between the backing and the sensing medium layer.
In particular embodiments of the present application, the ultrasound transmitting layer is located between the ultrasound receiving layer and the backing, or,
the ultrasonic wave transmitting layer is positioned between the sensing medium layer and the ultrasonic wave receiving layer.
In a specific embodiment of the present application, specifically, the ultrasonic wave receiving layer is composed of a transducer having at least one vibrating element, and the transducer is any one of the following transducers:
capacitive Micromachined Ultrasonic Transducers (CMUTs), piezoelectric Micromachined Ultrasonic Transducers (PMUTs), or piezoelectric polymer ultrasonic transducers.
In a specific embodiment of the present application, specifically, the vibrating element includes a plurality of third electrode layers, a vibrating membrane layer and a fourth electrode layer disposed on the vibrating membrane layer, where each third electrode and the vibrating membrane layer form a cavity, and adjacent cavities are isolated from each other.
In a specific embodiment of the present application, specifically, the ultrasound receiving layer further includes: a substrate, wherein a plurality of grooves for installing the third electrode layer are formed in the substrate;
and a plurality of spacer blocks are arranged on the substrate, and the spacer blocks divide gaps between the substrate and the vibrating diaphragm layer into a plurality of cavities corresponding to the third electrode layers one by one.
In a specific embodiment of the present application, in particular, the spacer particles are integrally formed with the substrate, or the spacer particles are disposed on the substrate by bonding.
In a specific embodiment of the present application, specifically, a control circuit is further disposed on the substrate, where the control circuit is electrically connected to the third electrode layer.
In a specific embodiment of the present application, specifically, a projection area of the fourth electrode layer on the diaphragm layer completely covers the diaphragm layer, or the fourth electrode layer is a plurality of electrode layers separated from each other and corresponding to the third electrode layer.
In a specific embodiment of the present application, specifically, the material of the diaphragm layer is polysilicon or silicon nitride;
the third electrode layer and the fourth electrode layer are film layers made of any one of aluminum, copper, silver and nickel.
In a specific embodiment of the present application, specifically, the method further includes: a transition layer, wherein the transition layer is located between the sensing medium layer and the ultrasonic wave receiving layer or between the sensing medium layer and the ultrasonic wave transmitting layer.
In a specific embodiment of the present application, specifically, the sensing medium layer is a screen, glass or metal layer.
In a specific embodiment of the present application, specifically, the method further includes: and the adhesive layer covers the connection part of each film layer on the outer surface of the ultrasonic transducer.
In a second aspect, the present application provides an electronic device, comprising: the ultrasonic transducer of any one of the above, wherein the electronic device is provided with an ultrasonic scanning area corresponding to the ultrasonic transducer.
In a specific embodiment of the present application, specifically, the ultrasound scanning area is located in a display area of a display screen of the electronic device or in a non-display area of the electronic device.
In a specific embodiment of the present application, specifically, the shape of the ultrasonic scanning area is a circle, a square, an ellipse, or an irregular pattern.
According to the ultrasonic transducer and the electronic device, through the separated ultrasonic transmitting layer and ultrasonic receiving layer, the dual purposes of transmitting and receiving can be avoided when materials are selected for the ultrasonic transmitting layer and the ultrasonic receiving layer, the piezoelectric materials with strong transmitting capacity and the materials with good receiving effects are selected for use, namely, the piezoelectric materials with strong amplitude under the action of voltage can be selected for the ultrasonic transmitting layer, the ultrasonic transmitting capacity of the ultrasonic transmitting layer is strong, the action distance is large, the performance of the ultrasonic transducer is better, compared with the prior art, the problem that the ultrasonic transmitting capacity is poor due to the fact that materials with small amplitude are selected for use is avoided, and correspondingly, due to the fact that the receiving effect is good in the existing ultrasonic transducer, the ultrasonic receiving layer can be selected for use with the same material as the vibrating membrane layer in the prior art, the ultrasonic transducer provided by the embodiment achieves the purposes that the ultrasonic transducer has strong ultrasonic transmitting capacity and good receiving effect, and therefore the working performance of the ultrasonic transducer is better, and the problem that the ultrasonic transducer is poor in ultrasonic transmitting capacity and has the ultrasonic transducer is affected.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief description will be given below of the drawings that are needed in the embodiments or the prior art descriptions, it being obvious that the drawings in the following description are some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort to a person skilled in the art.
Fig. 1 is a schematic cross-sectional structure of an ultrasonic transducer according to a first embodiment of the present disclosure;
FIG. 2 is a schematic cross-sectional view of layers of an ultrasonic transducer according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram illustrating an arrangement of vibration elements in an ultrasonic receiving layer in an ultrasonic transducer according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a cross-sectional structure of each layer in an ultrasonic transducer provided in the second embodiment of the present application;
fig. 5 is a schematic structural diagram of an electronic device according to a third embodiment of the present application.
Specific embodiments of the present disclosure have been shown by way of the above drawings and will be described in more detail below. These drawings and the written description are not intended to limit the scope of the disclosed concepts in any way, but rather to illustrate the disclosed concepts to those skilled in the art by reference to specific embodiments.
Reference numerals illustrate:
10-an ultrasonic emission layer; 11-a first electrode layer; 12-a second electrode layer;
13-a piezoelectric layer; 101-pulsed sound waves; 102-focusing the beam;
103-reflecting the beam; 104-biological structure; 105-valley;
106-ridge; 20-an ultrasonic wave receiving layer; 21-vibrating element;
22-spacers; 23-substrate; 211-a diaphragm layer;
212-spacer blocks; 213-a third electrode layer; 214-a fourth electrode layer;
215-cavities; 30-a transition layer; 40-a sensing medium layer;
50-backing; 100-an electronic device; 110-displaying a screen;
120-ultrasound scan area.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The technical scheme of the present application is described in detail below with specific examples. The following embodiments may be combined with each other, and some embodiments may not be repeated for the same or similar concepts or processes.
In the following, some terms in the present application are explained for easy understanding by those skilled in the art.
The capacitive micromachined ultrasonic transducer (capacitive micromachined urtrosonic transducer, CMUT) is a microelectromechanical device which utilizes acoustic energy and electric energy to mutually convert, has the advantages of high integration level, good sensitivity, wide receiving bandwidth and the like, and is an ideal device for manufacturing the ultrasonic transducer. The CMUT can convert either ultrasonic waves into electrical signals or electrical signals into ultrasonic waves. When a direct current voltage is applied between the upper electrode and the lower electrode, a strong electrostatic field pulls the diaphragm layer toward the substrate, and then an alternating current voltage is applied between the upper electrode and the lower electrode, at this time, the diaphragm layer vibrates to generate ultrasonic waves. In contrast, after a proper DC bias voltage is applied between the upper electrode and the lower electrode, the vibrating diaphragm layer vibrates under the action of ultrasonic waves, the capacitance between the two electrode plates changes, and the ultrasonic waves are received by detecting the change.
As described in the background art, the existing ultrasonic transducer has a problem of poor ultrasonic emission capability, and the reason for this problem is that: the existing ultrasonic transducer applies direct current voltage and alternating current voltage between an upper electrode and a lower electrode to enable a vibrating diaphragm layer to vibrate to generate ultrasonic waves and emit, meanwhile, the vibrating diaphragm layer vibrates under the action of the ultrasonic waves, capacitance between two electrode plates changes, and ultrasonic wave receiving is achieved through detecting the change, namely in the existing ultrasonic transducer, the vibrating diaphragm layer simultaneously takes the dual actions of transmitting and receiving the ultrasonic waves into consideration, so that the vibrating diaphragm layer is made of polysilicon or silicon nitride materials, and meanwhile, reflection resonance frequency of the ultrasonic waves is in direct proportion to thickness of the vibrating diaphragm layer, and in order to improve identification accuracy of images, the ultrasonic wave transmitting frequency is generally required to be in a range of 10 Mhz-25 MHz. CMUT needs to be thick and small in diameter in order to obtain a diaphragm thickness corresponding to this frequency. Due to the limitation of the device voltage, the voltage which can be distributed to the CMUT device is generally lower, and finally the amplitude of the vibrating diaphragm is smaller, so that the capability of transmitting ultrasonic waves is reduced, and when the vibrating diaphragm layer is made of a material with larger amplitude, the capability of receiving the acoustic waves of the vibrating diaphragm layer is greatly reduced.
For the foregoing reasons, the present application provides an ultrasonic transducer, and the following detailed description is given with specific embodiments to the technical solutions of the present application and how the technical solutions of the present application solve the foregoing technical problems. The following embodiments may be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments. Embodiments of the present application will be described below with reference to the accompanying drawings.
Example 1
Fig. 1 is a schematic cross-sectional structure of an ultrasonic transducer according to an embodiment of the present application, fig. 2 is a schematic cross-sectional structure of each layer of the ultrasonic transducer according to the embodiment of the present application, and fig. 3 is a schematic arrangement of vibration elements in an ultrasonic receiving layer of the ultrasonic transducer according to the embodiment of the present application.
The ultrasonic transducer provided by the embodiment can be applied to the field of fingerprint identification and is used for realizing functions of authorized startup, admission, credit payment and the like of a current user.
Referring to fig. 1 to 3, the ultrasonic transducer device includes: the ultrasonic imaging device comprises a sensing medium layer 40, an ultrasonic receiving layer 20 capable of receiving ultrasonic waves and an ultrasonic transmitting layer 10 capable of transmitting the ultrasonic waves, wherein the ultrasonic transmitting layer 10 and the ultrasonic receiving layer 20 are arranged below the sensing medium layer 40 in a stacked mode, namely, the sensing medium layer 40 is located at the topmost layer of an ultrasonic transducer, the sensing medium layer 40 is an outer surface of the ultrasonic transducer, which is used for sensing characteristic biological information such as fingerprints, and the like, the sensing medium layer 40 can be specifically formed by a screen, glass or a metal coating, and the like, the ultrasonic transmitting layer 10 and the ultrasonic receiving layer 20 are located below the sensing medium layer 40, when the ultrasonic transmitting layer 10 and the ultrasonic receiving layer 20 are arranged in a stacked mode, specifically, the ultrasonic receiving layer 20 can be located between the ultrasonic transmitting layer 10 and the sensing medium layer 40 (shown in reference to fig. 1), or the ultrasonic transmitting layer 10 is located between the ultrasonic receiving layer 20 and the sensing medium layer 40, in the embodiment, the ultrasonic transmitting layer 10 is used for generating ultrasonic waves and transmitting the characteristic biological information such as fingerprints, the ultrasonic receiving layer 20 is specifically used for receiving returned ultrasonic waves, the ultrasonic receiving layer 20 is used for receiving the ultrasonic waves, and the ultrasonic wave transmitting layer 10 is used for receiving the echo information through the control unit, and the echo signal is compared with the image receiving information, and the echo signal is stored in the skin.
In the ultrasonic transducer provided in this embodiment, since the film layer for transmitting ultrasonic waves and the film layer for receiving ultrasonic waves are respectively two independent film layers, the ultrasonic transmitting layer 10 may be responsible for transmitting ultrasonic waves, the ultrasonic receiving layer 20 may be responsible for receiving returning ultrasonic waves, so that the materials of the ultrasonic transmitting layer 10 and the ultrasonic receiving layer 20 may not be used simultaneously for both transmission and reception purposes, and materials with stronger transmitting ability and materials with better receiving effect may be selected respectively, for example, the ultrasonic transmitting layer 10 may be selected from materials with larger amplitude under the action of voltage, for example, piezoelectric materials, so that the ultrasonic transmitting ability of the ultrasonic transmitting layer 10 is stronger, the working distance is larger, the performance of the ultrasonic transducer is better, compared with the prior art, the problem that the ultrasonic transmitting ability is poor due to the fact that the vibration film with smaller amplitude is selected is avoided.
Further, in the present embodiment, referring to fig. 2, the ultrasonic wave emitting layer 10 includes the first electrode layer 11, the piezoelectric layer 13 and the second electrode layer 12, wherein the first electrode layer 11 and the second electrode layer 12 cover the opposite sides of the piezoelectric layer 13, respectively, the piezoelectric layer 13 is used to emit ultrasonic waves on the whole surface when ac voltage is applied between the first electrode layer 11 and the second electrode layer 12, that is, in the present embodiment, the ultrasonic wave emitting layer 10 is specifically composed of the first electrode layer 11, the piezoelectric layer 13 and the second electrode layer 12, and when ac voltage is applied between the first electrode layer 11 and the second electrode layer 12, the entire surface of the piezoelectric layer 13 emits ultrasonic waves, since the piezoelectric layer 13 is made of piezoelectric material, in this embodiment, compared with the vibrating film layer in the prior art, the piezoelectric layer 13 in the ultrasonic wave emitting layer 10 can generate constant pulse sound wave under the action of voltage, and has stronger emitting capability, wherein the frequency of the pulse sound wave generated by the ultrasonic wave emitting layer 10 is determined by the applied electric field, and the characteristic wavelength range for biological recognition is 15-25MHz, and the piezoelectric layer 13 adopts the piezoelectric material of the whole surface, so that the ultrasonic wave with narrow bandwidth is emitted, wherein the thickness of the piezoelectric material determines the resonance frequency in this embodiment, and the thickness of the piezoelectric layer 13 can be 100um in this embodiment.
In this embodiment, the piezoelectric layer 13 is a film layer made of piezoelectric ceramic, piezoelectric single crystal or piezoelectric polymer material, that is, the piezoelectric layer 13 may be made of piezoelectric ceramic, or the piezoelectric layer 13 may also be made of piezoelectric single crystal material, or the piezoelectric layer 13 may also be made of piezoelectric polymer material, where. The piezoelectric ceramic has stronger emission capability, but because the acoustic impedance of the piezoelectric ceramic and air is poor in matching, the broadband of the piezoelectric ceramic for receiving sound waves is narrow, and the receiving capability of the piezoelectric ceramic is influenced, so that the piezoelectric ceramic or other piezoelectric materials are not always selected for the diaphragm film in the existing ultrasonic transducer for the purpose of simultaneous emission and reception, but in the application, the piezoelectric layer 13 in the ultrasonic emission layer 10 can be selected for the piezoelectric ceramic because the emission and the reception of ultrasonic waves are independent two film layers, so that the ultrasonic emission capability of the ultrasonic emission layer 10 is greatly enhanced.
In this embodiment, the first electrode layer 11 and the second electrode layer 12 are metal conductive layers made of any one of aluminum, copper, silver, and nickel.
In this embodiment, in order to ensure that the entire surface of the piezoelectric layer 13 emits ultrasonic waves, specifically, the projection areas of the first electrode layer 11 and the second electrode layer 12 on the piezoelectric layer 13 are respectively and completely overlapped with the front and back surfaces of the piezoelectric layer 13, that is, the first electrode layer 11 and the second electrode layer 12 are the same entire surface electrode as the front and back surfaces of the piezoelectric layer 13, so that when an alternating electric field is applied between the first electrode layer 11 and the second electrode layer 12, the entire surface of the piezoelectric layer 13 can generate constant pulse sound waves.
In this embodiment, referring to fig. 2, the method further includes: the backing 50 is the bottommost layer of the ultrasonic transducer, the ultrasonic transmitting layer 10 and the ultrasonic receiving layer 20 are stacked between the backing 50 and the sensing medium layer 40, in this embodiment, the backing 50 is used for absorbing the ultrasonic wave propagating downwards, the backing 50 can be made of a damping material, and meanwhile, the backing 50 also plays a role in heat conduction, so that the backing 50 can be made of a stainless steel metal backboard.
In this embodiment, referring to fig. 2, the ultrasonic wave transmitting layer 10 is located between the ultrasonic wave receiving layer 20 and the backing 50, or the ultrasonic wave transmitting layer 10 is located between the sensing medium layer 40 and the ultrasonic wave receiving layer 20 (referring to fig. 4), wherein when the ultrasonic wave transmitting layer 10 is located between the sensing medium layer 40 and the ultrasonic wave receiving layer 20, the backing 50 is located on the bottom layer of the ultrasonic wave receiving layer 20.
In this embodiment, referring to fig. 1, the ultrasonic receiving layer 20 is composed of a transducer having at least one vibrating element 21, and the transducer is a capacitive micro-mechanical ultrasonic transducer (CMUT), a piezoelectric micro-mechanical ultrasonic transducer (PMUT), or a piezoelectric polymer ultrasonic transducer, where, referring to fig. 3, the number of vibrating elements 21 is plural, and a two-dimensional array in which the plurality of vibrating elements 21 are arranged according to a predetermined pattern forms the ultrasonic receiving layer 20, where the plurality of vibrating elements 21 are independent from each other, so that the received beam focusing can be achieved, where isolation between the vibrating elements 21 is achieved by an array type lower electrode or upper electrode, separation between the vibrating elements 21 may be a physical division such as a spacer 22, and the spacer material may be a material composition with a larger acoustic impedance for reducing the mutual interference between the vibrating elements 21.
In this embodiment, the vibrating element 21 includes a plurality of third electrode layers 213 disposed on the substrate 23 and separated from each other, a vibrating membrane layer 211, and a fourth electrode layer 214 disposed on the vibrating membrane layer 211, where a cavity 215 is formed between each third electrode and the vibrating membrane layer 211 and adjacent cavities 215 are isolated from each other, as shown in fig. 2, the third electrode layers 213 are separated from each other, each third electrode layer 213 corresponds to one cavity 215, and the cavity 215 is specifically a vacuum cavity, so that acoustic impedance at the cavity 215 can be reduced, where the cavities 215 are isolated from each other, where a projection area of the fourth electrode layer 214 on the vibrating membrane layer 211 completely covers the vibrating membrane layer 211, that is, the fourth electrode layer 214 is an integral electrode, or the fourth electrode layer 214 may be a plurality of mutually separated electrodes for independently controlling the vibration of the vibration film of each vibration element 21, where in this embodiment, when the vibration element 21 is composed of the third electrode layer 213, the vibration film layer 211, the fourth electrode layer 214 and the cavity 215, when an alternating voltage is applied between the third electrode layer 213 and the fourth electrode layer 214, the vibration film layer 211 emits a sine wave to the outside under the action of electrostatic force, when a reflected sound wave/echo reaches the surface of the vibration film layer 211 of the vibration element 21, the vibration will be converted into a voltage/potential change between the upper electrode and the lower electrode, and the skin feature is imaged according to the voltage/potential change, and the image information stored in the terminal is compared to realize the function of biological recognition.
In this embodiment, the width of the cavity 215 may be smaller than the width of the third electrode layer 213, or the width of the cavity 215 may be equal to the width of the third electrode layer 213, or the width of the cavity 215 may be larger than the width of the third electrode layer 213.
The specific process of the ultrasonic transducer provided in this embodiment during operation is: firstly, a constant pulse sound wave 101 is generated by applying an alternating electric field between the first electrode layer 11 and the second electrode layer 12, when the ultrasonic wave reaches the cavity 215 structure in the laminated layer, strong reflection occurs due to unmatched acoustic impedance, the opposite ultrasonic wave can normally pass through the side wall of the cavity 215 to form a focusing wave beam 102, characteristic reflection is formed at the interface after the ultrasonic wave reaches the interface of the sensing medium layer 40, a biological structure 104 with a characteristic structure such as finger skin is formed, in this example, the fingerprint, the convex part is taken as ridges 106, the concave part is taken as valleys 105, when the sound wave reaches the positions of the valleys 105 of the fingerprint, the reflected wave beam 103 is generated due to the fact that the acoustic impedance of air is large, and when the sound wave reaches the positions of the ridges 106 of the fingerprint, transmission of the sound wave occurs due to the fact that the acoustic impedance of the skin is low, wherein when the reflected wave 103 reaches the vibrating film layer 211, the vibrating film layer 211 regularly vibrates, the voltage/potential between the third electrode layer 213 and the fourth electrode layer 214 changes, and the characteristic skin is imaged according to the detected voltage/potential change. Finally, the purpose of biological recognition is achieved by comparing the characteristic information of the skin surface with the pre-stored skin characteristic information.
In this embodiment, the material of the diaphragm layer 211 may be polysilicon or silicon nitride, such as Si 3 N 4 The third electrode layer 213 and the fourth electrode layer 214 are film layers made of any one of aluminum, copper, silver, and nickel.
In this embodiment, the ultrasound receiving layer 20 further includes: the substrate 23, wherein the substrate 23 may be a monocrystalline silicon material, and a plurality of grooves for mounting the third electrode layers 213 are formed on the substrate 23, that is, in this embodiment, the plurality of third electrode layers 213 are mounted in the grooves formed on the substrate 23.
Meanwhile, in order to isolate the cavity 215, in this embodiment, a plurality of spacer particles 212 are disposed on the substrate 23, and the spacer particles 212 divide the gap between the substrate 23 and the diaphragm layer 211 into a plurality of cavities 215 corresponding to the third electrode layer 213 one by one, where in this embodiment, the spacer particles 212 on the substrate 23 and the spacers 22 between the vibrating elements 21 may be the same components, that is, the vibrating elements 21 may be isolated by the spacer particles 212, where in this embodiment, the spacer particles 212 and the substrate 23 may be integrally formed, for example, a groove is formed on the substrate 23 by engraving, a part of the space in the groove is used for placing the third electrode layer 213, another part of the space is the cavity 215, or the spacer particles 212 are disposed on the substrate 23 by a bonding manner, that is, the spacer particles 212 are in a metal structure added by a semiconductor process, where in this embodiment, when the spacer particles 212 are disposed on the substrate 23 by a bonding manner, the spacer particles 212 are specifically in a eutectic bonding structure of bonding materials such as Al and Ge.
In this embodiment, the substrate 23 is not limited to the structure shown in fig. 2, and other control circuits responsible for calculation or signal processing are further disposed on the substrate 23, where the control circuits are electrically connected to the third electrode layer 213, so as to implement signal reading and processing.
In this embodiment, since the size of the vibrating element 21 determines the resonance frequency of the CMUT, the material and size of the vibrating element 21 may be, but are not limited to, the following combinations: the diameter of the vibrating element 21 may be 25um, the thickness of the fourth electrode layer 214 may be 0.5um, the diaphragm layer 211 (Si 3 N 4 ) The thickness of the cavity 215 may be 0.7um, the size of the third electrode layer 213 may be 0.5um, and the thickness of the substrate 23 may be 100um.
In this embodiment, the method further includes: transition layer 30, wherein, referring to fig. 2, transition layer 30 is located between sensing medium layer 40 and ultrasonic wave receiving layer 20, or referring to fig. 4, transition layer 30 is located between sensing medium layer 40 and ultrasonic wave transmitting layer 10, transition layer 30 is specifically made of acoustic transition layer 30 material, transition layer 30 is used for reducing acoustic impedance of acoustic wave introduction, and transition layer 30 material may be a layer of material or a layer of materialIs a multi-layer material which plays the roles of acoustic matching and adhesive layers, such as epoxy adhesive layers and SiO 2 Is a composite laminate of (a) and (b).
In this embodiment, the method further includes: and the adhesive layer (not shown) covers the connection part of each film layer on the outer surface of the ultrasonic transducer, namely the adhesive layer bonds and fixes the connection part of each film layer on the side surface of the ultrasonic transducer, so that the boundary part of each film layer in the ultrasonic transducer is not easy to peel off, and the stability of the ultrasonic transducer is improved.
Example two
Fig. 4 is a schematic structural diagram of a cross-sectional structure of each layer in an ultrasonic transducer according to a second embodiment of the present application.
The difference between this embodiment and the above embodiment is: in this embodiment, the ultrasonic wave transmitting layer 10 is located between the sensing medium layer 40 and the ultrasonic wave receiving layer 20, the ultrasonic wave receiving layer 20 is located between the backing 50 and the ultrasonic wave transmitting layer 10, and the transition layer 30 is located between the sensing medium layer 40 and the ultrasonic wave transmitting layer 10.
The working distance of the ultrasonic transducer provided in this embodiment is specifically: first, an alternating electric field is applied between the first electrode layer 11 and the second electrode layer 12 to generate a constant pulse sound wave 101, when the sound wave reaches the valley 105 of the fingerprint, a reflected wave beam is generated due to the large acoustic impedance of air, and when the sound wave reaches the ridge 106 of the fingerprint, transmission of the sound wave occurs due to the low acoustic impedance of skin, wherein when the reflected wave beam reaches the diaphragm layer 211, the diaphragm layer 211 regularly vibrates, the vibration of the diaphragm layer 211 causes a voltage/potential between the third electrode layer 213 and the fourth electrode layer 214 to change, and the skin characteristic is imaged according to the detected voltage/potential change. Finally, the purpose of biological recognition is achieved by comparing the characteristic information of the skin surface with the pre-stored skin characteristic information.
In this embodiment, when the ultrasonic wave transmitting layer 10 is located above the ultrasonic wave receiving layer 20, the second electrode layer 12 and the fourth electrode layer 214 may share one electrode layer, and the electrode layer may be grounded, so that the arrangement of the electrode layers is reduced.
Example III
Fig. 5 is a schematic structural diagram of an electronic device according to a third embodiment of the present application.
In the embodiment, the electronic device 100 includes the ultrasonic transducer device of any of the above embodiments, where the electronic device 100 may be any device requiring a feature recognition requirement, such as a tablet computer, a notebook computer, a mobile phone, or an access control system, and therefore, in this embodiment, the electronic device 100 has an ultrasonic scanning area 120 corresponding to the ultrasonic transducer device, and when installed, the sensing medium layer 40 of the ultrasonic transducer device is located in the ultrasonic scanning area 120 or directly exposed at the ultrasonic scanning area 120, and when in use, a user's finger may be placed in the ultrasonic scanning area 120 to be recognized by the ultrasonic transducer device.
In the electronic device 100 provided in this embodiment, the ultrasonic transducer includes the independent ultrasonic transmitting layer 10 and the ultrasonic receiving layer 20, so that the ultrasonic transducer has a strong ultrasonic transmitting capability and a good ultrasonic receiving capability, so that the performance of the ultrasonic transducer is better, and thus the identification accuracy and precision of the electronic device 100 are higher.
The electronic device 100 provided in this embodiment may specifically have a display screen 110 for displaying, where the ultrasonic scanning area 120 is located on the display area of the display screen 110 of the electronic device 100, for example, the ultrasonic transducer may be disposed below the display screen 110 of the electronic device 100, so that a user may directly perform fingerprint input in the display area of the display screen 110; alternatively, the ultrasound scanning area 120 is located on a non-display area of the electronic device 100, such as on a bezel of the electronic device 100, and the ultrasound scanning area 120 is a separate button area.
In this embodiment, the shape of the ultrasonic scanning area 120 may be, but is not limited to, a circle, a square, an ellipse, or an irregular pattern.
In the description of the present application, it should be noted that, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, indirectly connected through an intermediary, in communication between two elements, or in an interaction relationship between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In the description of the present application, it should be understood that the terms "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, merely to facilitate description of the present application and simplify the description, and do not indicate or imply that the devices or elements being referred to must have a specific orientation, be configured and operated in a specific orientation, and are therefore not to be construed as limiting the present application. In the description of the present application, the meaning of "a plurality" is two or more, unless specifically stated otherwise.
The terms "first," "second," "third," "fourth" and the like in the description and in the claims of this application and in the above-described figures, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the present application described herein may be capable of operation in sequences other than those illustrated or described herein, for example. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
Claims (15)
1. An ultrasonic transducer device, comprising: a sensing medium layer (40), an ultrasonic wave receiving layer (20) capable of receiving ultrasonic waves and an ultrasonic wave transmitting layer (10) capable of transmitting ultrasonic waves, wherein the ultrasonic wave transmitting layer (10) and the ultrasonic wave receiving layer (20) are arranged below the sensing medium layer (40) in a stacked manner;
further comprises: a backing (50), wherein the ultrasonic wave transmitting layer (10) and the ultrasonic wave receiving layer (20) are arranged between the backing (50) and the sensing medium layer (40) in a stacked manner, the backing (50) is used for absorbing ultrasonic waves which propagate downwards, and the backing (50) is a stainless steel metal backboard;
the ultrasound receiving layer (20) consists of a transducer having at least one vibrating element (21);
the vibrating element (21) comprises a plurality of third electrode layers (213) which are arranged on a substrate and are mutually isolated, a vibrating membrane layer (211) and a fourth electrode layer (214) which is arranged on the vibrating membrane layer (211), wherein a cavity (215) is formed between each third electrode and the vibrating membrane layer (211), the adjacent cavities (215) are mutually isolated, and the fourth electrode layer (214) is a plurality of electrode layers which are mutually separated and correspond to the third electrode layers (213);
the ultrasonic wave receiving layer (20) further includes: a substrate (23), wherein a plurality of grooves for mounting the third electrode layer (213) are provided on the substrate (23);
a plurality of spacer particles are arranged on the substrate (23), and the spacer particles divide gaps between the substrate (23) and the vibrating membrane layer (211) into a plurality of cavities (215) which are in one-to-one correspondence with the third electrode layer (213).
2. The ultrasonic transducer device according to claim 1, wherein the ultrasonic wave emitting layer (10) comprises a first electrode layer (11), a piezoelectric layer (13) and a second electrode layer (12), wherein the first electrode layer (11) and the second electrode layer (12) cover upper and lower faces of the piezoelectric layer (13), respectively, and the piezoelectric layer (13) is configured to emit ultrasonic waves over the entire face when an alternating voltage is applied between the first electrode layer (11) and the second electrode layer (12).
3. An ultrasonic transducer device according to claim 2, wherein the piezoelectric layer (13) is a membrane layer made of any one of the following materials:
piezoelectric ceramics, piezoelectric single crystals or piezoelectric polymer materials;
the first electrode layer (11) and the second electrode layer (12) are film layers made of any one of aluminum, copper, silver and nickel.
4. An ultrasound transducer device according to claim 2, wherein the projected areas of the first electrode layer (11) and the second electrode layer (12) on the piezoelectric layer (13) are entirely overlapped with the opposite sides of the piezoelectric layer (13), respectively.
5. The ultrasonic transducer device according to claim 4, wherein the ultrasonic wave transmitting layer (10) is located between the ultrasonic wave receiving layer (20) and the backing (50), or,
the ultrasonic wave transmitting layer (10) is located between the sensing medium layer (40) and the ultrasonic wave receiving layer (20).
6. The ultrasonic transducer device according to any one of claims 1-5, wherein the transducer is any one of the following:
capacitive micromachined ultrasonic transducer CMUT, piezoelectric micromachined ultrasonic transducer PMUT, or piezoelectric polymer ultrasonic transducer.
7. An ultrasonic transducer device according to claim 1, characterized in that the spacer particles are formed integrally with the substrate (23) or are provided on the substrate (23) by means of bonding.
8. Ultrasonic transducer device according to claim 1, wherein the substrate (23) is further provided with a control circuit, wherein the control circuit is electrically connected to the third electrode layer (213).
9. The ultrasonic transducer device according to claim 1 or 8, wherein the material of the diaphragm layer (211) is polysilicon or silicon nitride;
the third electrode layer (213) and the fourth electrode layer (214) are film layers made of any one of aluminum, copper, silver and nickel.
10. The ultrasonic transducer device of any of claims 1-5, further comprising: a transition layer (30), wherein the transition layer (30) is located between the sensing medium layer (40) and the ultrasound receiving layer (20) or between the sensing medium layer (40) and the ultrasound transmitting layer (10).
11. An ultrasonic transducer device according to any of claims 1-5, wherein the sensing medium layer (40) is a screen, glass or metal layer.
12. The ultrasonic transducer device of any of claims 1-5, further comprising: and the adhesive layer covers the connection part of each film layer on the outer surface of the ultrasonic transducer.
13. An electronic device, comprising: the ultrasound transducer device of any of claims 1-12, and the electronic device has an ultrasound scanning region (120) corresponding to the ultrasound transducer device.
14. The electronic device of claim 13, wherein the ultrasound scanning area (120) is located in a display area of a display screen (110) of the electronic device or in a non-display area of the electronic device.
15. The electronic device of claim 13, wherein the ultrasound scanning area (120) is circular, square, oval or irregular in shape.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/116369 WO2020102965A1 (en) | 2018-11-20 | 2018-11-20 | Ultrasonic transducer and electronic device |
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| CN109643378A CN109643378A (en) | 2019-04-16 |
| CN109643378B true CN109643378B (en) | 2024-01-26 |
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| WO (1) | WO2020102965A1 (en) |
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| CN110175586B (en) * | 2019-05-30 | 2021-04-20 | 京东方科技集团股份有限公司 | Fingerprint identification module, fingerprint identification method thereof and display device |
| CN110232363B (en) | 2019-06-18 | 2021-12-07 | 京东方科技集团股份有限公司 | Ultrasonic fingerprint identification sensor, preparation method thereof and display device |
| CN110234056B (en) | 2019-06-21 | 2021-01-12 | 京东方科技集团股份有限公司 | Transducer, preparation method thereof and transducer device |
| CN110312008A (en) * | 2019-06-24 | 2019-10-08 | Oppo广东移动通信有限公司 | Screen protecting film and electronic equipment |
| CN110348334A (en) * | 2019-06-25 | 2019-10-18 | 武汉华星光电技术有限公司 | Fingerprint recognition mould group and display device |
| CN110350078B (en) * | 2019-06-28 | 2021-01-05 | 东华大学 | Flexible acoustic sensor with high-efficiency acoustoelectric conversion characteristic |
| CN110311032B (en) * | 2019-06-28 | 2021-01-05 | 东华大学 | Flexible acoustic sensor with high sound-electricity conversion efficiency |
| CN110681560B (en) * | 2019-09-10 | 2020-11-03 | 武汉大学 | MEMS ultrasonic positioning sensor with Helmholtz resonant cavity |
| CN113710379B (en) * | 2020-03-23 | 2022-08-19 | 深圳市汇顶科技股份有限公司 | Ultrasonic transducer, ultrasonic scanning system and processing method |
| WO2021217439A1 (en) * | 2020-04-28 | 2021-11-04 | 深圳市汇顶科技股份有限公司 | Ultrasonic transducer, information acquisition element and electronic device |
| CN111695534B (en) * | 2020-06-16 | 2024-02-02 | 京东方科技集团股份有限公司 | Fingerprint identification sensor and display panel |
| CN112580534A (en) * | 2020-12-23 | 2021-03-30 | 上海思立微电子科技有限公司 | Ultrasonic fingerprint sensing chip, electronic equipment and manufacturing method |
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| WO2020102965A1 (en) | 2020-05-28 |
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