CN110350078B - Flexible acoustic sensor with high-efficiency acoustoelectric conversion characteristic - Google Patents
Flexible acoustic sensor with high-efficiency acoustoelectric conversion characteristic Download PDFInfo
- Publication number
- CN110350078B CN110350078B CN201910571842.5A CN201910571842A CN110350078B CN 110350078 B CN110350078 B CN 110350078B CN 201910571842 A CN201910571842 A CN 201910571842A CN 110350078 B CN110350078 B CN 110350078B
- Authority
- CN
- China
- Prior art keywords
- electrode layer
- layer
- lower electrode
- acoustic sensor
- blind hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 44
- 238000009826 distribution Methods 0.000 claims abstract description 11
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 239000002033 PVDF binder Substances 0.000 claims description 27
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 229910052901 montmorillonite Inorganic materials 0.000 claims description 11
- 239000002048 multi walled nanotube Substances 0.000 claims description 11
- 238000010041 electrostatic spinning Methods 0.000 claims description 8
- 239000000017 hydrogel Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 239000007772 electrode material Substances 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 14
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 7
- 229920002401 polyacrylamide Polymers 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical compound C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- GJKGAPPUXSSCFI-UHFFFAOYSA-N 2-Hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone Chemical compound CC(C)(O)C(=O)C1=CC=C(OCCO)C=C1 GJKGAPPUXSSCFI-UHFFFAOYSA-N 0.000 description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
Landscapes
- Piezo-Electric Transducers For Audible Bands (AREA)
Abstract
The invention relates to a flexible acoustic sensor with efficient acoustoelectric conversion characteristics, which has a composite layer structure and comprises a piezoelectric film layer and a lower electrode layer which are adjacent, wherein a blind hole is arranged on the lower electrode layer, the surface of the lower electrode layer, where an orifice of the blind hole is located, is combined with the piezoelectric film layer, the diameter of the blind hole is 1cm, the depth of the blind hole is 0.7cm, and the distribution density of the blind hole is 1/2-12 cm2The blind hole is cylindrical; the maximum voltage output of the flexible acoustic sensor under the acoustic wave with decibel of 80dB and frequency of 220Hz is 1.0-3.5 mV/cm2. The flexible acoustic sensor has the characteristic of high-efficiency sound-electricity conversion, improves the sound-electricity conversion efficiency by 67-483% compared with the flexible acoustic sensor with the piezoelectric film layer completely attached to the lower electrode layer, and effectively solves the problem that the sound-electricity conversion efficiency of the flexible acoustic sensor is greatly weakened because the vibration absorption phenomenon of the lower electrode material limits the vibration effect of the piezoelectric film.
Description
Technical Field
The invention belongs to the technical field of sensors, relates to a flexible acoustic sensor with efficient acoustoelectric conversion characteristics and comprising a piezoelectric film layer and a lower electrode layer which are adjacent, and particularly relates to a flexible acoustic sensor, wherein a blind hole is formed in the lower electrode layer, and the surface of the lower electrode layer, where an orifice of the blind hole is located, is combined with the piezoelectric film layer.
Background
Acoustic sensors have been receiving much attention as the most intuitive two-way communication device between humans and machines. However, the conventional acoustic sensor employs a capacitive device to measure the capacitance between two electrode layers, and has problems of low sensitivity, large volume, strong rigidity, difficulty in integration, and the like.
The piezoelectric material is a crystalline material characterized in that when it is deformed by an external force, electric charges are generated on the surface due to internal polarization, and commonly used piezoelectric materials include quartz, piezoelectric ceramics, piezoelectric polymers, and piezoelectric composites. Compared with the traditional piezoelectric materials (quartz crystal, barium titanate, piezoelectric ceramics and the like), the piezoelectric film made of the piezoelectric polymer has the characteristics of light weight, good flexibility, wide frequency response range, wide dynamic response range and the like, and can show stronger piezoelectric property after being stretched and polarized. Therefore, in recent years, piezoelectric film materials made of piezoelectric polymers such as PVDF have been widely used in the field of acoustic sensors.
The mechanism of action of an acoustic sensor comprising a piezoelectric film is: the sound wave acts on the surface of the piezoelectric film to make the piezoelectric film vibrate, the surface of the piezoelectric film generates charges under the action of vibration mechanical stress, and the charges are led out by the electrodes. The sensor integrates the good flexibility of the piezoelectric film material and the replaceability brought by the modularized design, can be directly attached to the surface of a human body, and has wide application in the fields of biomedicine and the like. However, when the piezoelectric film is used to manufacture an acoustic sensor, the piezoelectric film needs to be combined with the lower electrode, and since the piezoelectric film is relatively flexible and light, when the piezoelectric film is directly attached to the lower electrode material, the vibration absorption phenomenon of the lower electrode material will severely limit the vibration effect of the piezoelectric film, so that the acoustic-electric conversion efficiency of the material is greatly reduced.
Therefore, a flexible acoustic sensor having a high efficiency of acoustic-electric conversion is in urgent need of research.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a flexible acoustic sensor with high-efficiency sound-electricity conversion characteristics.
In order to achieve the purpose, the invention adopts the following scheme:
the flexible acoustic sensor with the efficient acoustoelectric conversion characteristic is provided with a composite layer structure, the flexible acoustic sensor comprises a piezoelectric film layer and a lower electrode layer which are adjacent, a blind hole is arranged on the lower electrode layer, the blind hole structure is constructed by using technological methods such as die casting or mechanical punching, the surface of the lower electrode layer where an orifice of the blind hole is located is combined with the piezoelectric film layer, the diameter of the blind hole is 1cm, the depth of the blind hole is 0.7cm, and the distribution density of the blind hole is 1/2-12 cm2(the distribution mode is uniform distribution in a row-column mode), and the blind holes are cylindrical; the maximum voltage output of the flexible acoustic sensor under the acoustic wave with decibel of 80dB and frequency of 220Hz is 1.0-3.5 mV/cm2。
The shape of the cylinder is stable, and the improvement of the integral bending resistance of the flexible acoustic sensor is facilitated, so that the blind hole is designed into the cylinder shape, the diameter and the depth of the blind hole are in positive correlation with the sound-electricity conversion efficiency theoretically, the instability of the integral structure can be caused by the overlarge diameter and depth of the blind hole, the improvement of the sound-electricity conversion efficiency is not obvious due to the undersize of the blind hole, when the shape, the diameter and the depth of the blind hole are fixed, the distribution density of the blind hole can have a great influence on the sound-electricity conversion efficiency of the integral flexible acoustic sensor, the poor stability of the integral structure of the flexible acoustic sensor can be caused by the overlarge distribution density of the blind hole, and the lower sound-electricity conversion efficiency of the integral flexible acoustic sensor can be caused by the undersize of the distribution density of the blind hole2。
In the prior art, the sound-electricity conversion efficiency can be represented by the maximum voltage output of a unit area under a certain condition, namely a certain decibel and a certain frequency, and the larger the maximum voltage output of the unit area is, the higher the sound-electricity conversion efficiency is, otherwise, the opposite is. When the lower electrode layer is not provided with the blind holes, the maximum voltage output of the flexible sound sensor under sound waves with decibel of 80dB and frequency of 220Hz is 0.6mV/cm2The maximum voltage output of the flexible acoustic sensor of the invention is 80dB and 220Hz1.0 to 3.5mV/cm2And the comparison shows that the acoustic-electric conversion efficiency of the flexible acoustic sensor is obviously improved after the blind hole is formed in the lower electrode layer.
For the flexible acoustic sensor mainly composed of the piezoelectric film and the lower electrode, because the piezoelectric film material is soft and light, when the piezoelectric film material is directly attached to the lower electrode material, the vibration absorption phenomenon of the lower electrode material can seriously limit the vibration performance of the whole material, so that the acoustoelectric conversion efficiency of the material is greatly weakened. The blind holes are arranged on the lower electrode layer, so that only part of the surface of one side of the piezoelectric film layer is combined with the lower electrode layer, and the cavities are arranged between the rest part and the lower electrode layer, so that the flexible acoustic sensor has higher acoustic-electric conversion efficiency, and the specific mechanism is as follows: firstly, only part of the surface of one side of the piezoelectric film layer is combined with the lower electrode layer, so that the contact area between the piezoelectric film and the lower electrode is smaller, and the vibration absorption effect of the lower electrode on the piezoelectric film is reduced; a cavity between the piezoelectric film and the lower electrode is a resonance cavity, so that sound waves can be fully reflected in the cavity, the two sides of the piezoelectric film can act on the cavity together, and the amplitude is increased; the combined part of the lower electrode layer and the piezoelectric film layer can play a role of supporting the piezoelectric film layer, the piezoelectric film layer is supported, and the piezoelectric film layer has certain tension by means of the binding force between the piezoelectric film layer and the piezoelectric film layer, so that the vibration restoring force of the piezoelectric film layer is improved by means of excellent compression performance of air, and the amplitude is increased.
As a preferable scheme:
the flexible acoustic sensor with efficient acoustic-electric conversion characteristics comprises three composite layers and an upper electrode layer adjacent to the piezoelectric film layer. The piezoelectric film has good flexibility, can generate vibration under the action of sound waves, generates opposite charges on the surfaces of two sides of the piezoelectric film under mechanical stress generated by vibration, and leads out the opposite charges through the upper electrode layer and the lower electrode layer respectively to form current.
The thicknesses of the upper electrode layer, the piezoelectric film layer and the lower electrode layer of the flexible acoustic sensor with the efficient acoustoelectric conversion characteristic are respectively 5-20 micrometers, 30-100 micrometers and 0.5-3 cm. The thickness of each layer is not limited to this, and the principle is followed that the thickness of the upper electrode layer and the piezoelectric film layer is as small as possible to ensure that the piezoelectric film can vibrate effectively, and the thickness of the lower electrode layer is only required to ensure that the structure is stable.
As mentioned above, the upper electrode layer is a metal plating layer, the requirement of the upper electrode layer is conductive and light and thin, and the upper electrode layer is as thin and thin as possible to avoid the limitation of the vibration of the piezoelectric film, thereby causing adverse effects on the sound-electricity conversion efficiency of the flexible sound sensor.
According to the flexible acoustic sensor with the efficient sound-electricity conversion characteristic, the piezoelectric film layer is the PVDF film layer, the PVDF film is prepared by adopting an electrostatic spinning method, the material of the piezoelectric film layer is not limited to the above, the PVDF film layer can be applied to the flexible acoustic sensor as long as the material with the piezoelectric performance is adopted, the PVDF film layer is preferably used as the piezoelectric film layer in the flexible acoustic sensor, the main reasons are that the PVDF film layer is excellent in piezoelectric performance, light in weight, good in flexibility, good in biocompatibility and low-sound impedance, the PVDF film can be processed by adopting various methods, the PVDF film is preferably processed by adopting the electrostatic spinning method, the main reason is that the electrostatic spinning can improve the content of beta crystal form in the PVDF film, and further the piezoelectric performance of the PVDF film is.
The flexible acoustic sensor with the efficient acoustoelectric conversion characteristic is characterized in that the piezoelectric film layer is a PVDF film layer doped with multi-wall carbon nanotubes and/or nano montmorillonite, the doping amounts of the multi-wall carbon nanotubes and the nano montmorillonite are 0.03-0.1 wt% and 0.5-1.5 wt% respectively, and the PVDF film doped with the multi-wall carbon nanotubes and/or the nano montmorillonite is prepared by adopting an electrostatic spinning method. The doping of the multi-walled carbon nano-tube and/or the nano-montmorillonite is beneficial to improving the content of beta crystal form in the PVDF membrane, and further the piezoelectric property of the PVDF membrane is improved. The doping amount of the multi-wall carbon nano tube and the nano montmorillonite is not too low, otherwise, the effect of improving the piezoelectric performance of the PVDF film is not obvious, and is not too high, otherwise, the mechanical performance of the PVDF film is adversely affected.
The flexible acoustic sensor with the efficient acoustic-electric conversion characteristic is characterized in that the lower electrode layer is a conductive hydrogel layer or a conductive rubber layer, the lower electrode layer has certain thickness, rigidity and good conductivity, and can conduct charges and maintain a stable blind hole structure.
In the flexible acoustic sensor with high-efficiency sound-electricity conversion characteristics, the piezoelectric film layer and the lower electrode layer are bonded by bonding, wherein the bonding is performed by a physical bonding method or a chemical bonding method, the physical bonding method is a thermal bonding method, a dipping bonding method, a spraying bonding method, a foam bonding method, a printing bonding method, a solvent bonding method, a flame treatment method or a corona treatment method, and the chemical bonding method is a chemical reagent treatment method or a gas thermal oxidation method.
Has the advantages that:
(1) the flexible acoustic sensor with the efficient acoustoelectric conversion characteristic improves the acoustoelectric conversion efficiency by arranging the blind holes, does not need to introduce other materials, and does not need to consider factors such as the compatibility, the biocompatibility and the like of additional materials;
(2) the flexible acoustic sensor with the efficient acoustoelectric conversion characteristic does not need a complex processing technology, and is low in production cost;
(3) the flexible acoustic sensor with efficient acoustoelectric conversion characteristics can be modularized, namely, the lower electrode layer can be replaced according to a use scene;
(4) the flexible acoustic sensor with high-efficiency acoustoelectric conversion characteristic can adjust the acoustoelectric conversion efficiency by adjusting the distribution density of the blind holes;
(5) the maximum voltage output of the flexible sound sensor with high-efficiency sound-electricity conversion characteristics under the sound wave with decibel of 80dB and frequency of 220Hz is 1.0-3.5 mV/cm2Compared with the flexible acoustic sensor with the piezoelectric film layer completely attached to the lower electrode layer, the acoustic-electric conversion efficiency of the flexible acoustic sensor is improved by 67-483%.
Drawings
FIG. 1 is a schematic structural diagram of a flexible acoustic sensor with high efficiency acousto-electric conversion characteristics according to the present invention;
FIG. 2 is a top view of the lower electrode layer of a flexible acoustic sensor having efficient acousto-electric conversion characteristics according to the present invention;
FIG. 3 is a schematic structural diagram of a lower electrode layer of a flexible acoustic sensor with high-efficiency acoustoelectric conversion characteristics according to the present invention;
the piezoelectric ceramic comprises a piezoelectric film layer 1, an upper electrode layer 2, a lower electrode layer 3 and a blind hole 4.
Detailed Description
The invention will be further illustrated with reference to specific embodiments. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
A flexible acoustic sensor with efficient acoustoelectric conversion characteristics is shown in figure 1, has a three-layer composite structure and comprises an upper electrode layer 2, a piezoelectric film layer 1 and a lower electrode layer 3 which are arranged from top to bottom, as shown in figures 2 and 3, a blind hole 4 is arranged on the lower electrode layer 3, the surface of the lower electrode layer 3 where an orifice of the blind hole 4 is located is combined with the piezoelectric film layer 1 (the piezoelectric film layer 1 and the lower electrode layer 3 are combined in a bonding mode), the diameter of the blind hole 4 is 1cm, the depth of the blind hole is 0.7cm, and the distribution density of the blind hole 4 is 1/2-12 cm2The blind hole 4 is cylindrical;
the thicknesses of the upper electrode layer 2, the piezoelectric film layer 1 and the lower electrode layer 3 are respectively 5-20 microns, 30-100 microns and 0.5-3 cm; the upper electrode layer 2 is a metal coating; the piezoelectric film layer 1 is a PVDF film layer, and the PVDF film is prepared by adopting an electrostatic spinning method; or the piezoelectric film layer 1 is a PVDF film layer doped with multi-walled carbon nanotubes and/or nano montmorillonite, the doping amounts of the multi-walled carbon nanotubes and the nano montmorillonite are 0.03-0.1 wt% and 0.5-1.5 wt%, respectively, and the PVDF film doped with the multi-walled carbon nanotubes and/or the nano montmorillonite is prepared by adopting an electrostatic spinning method; the lower electrode layer 3 is a conductive hydrogel layer or a conductive rubber layer;
the maximum voltage output of the flexible acoustic sensor under the acoustic wave with decibel of 80dB and frequency of 220Hz is 1.0-3.5 mV/cm2。
The preparation method of the flexible acoustic sensor with high-efficiency acoustoelectric conversion characteristic is not limited, the upper electrode layer is a silver plating layer, the piezoelectric film layer is a PVDF film layer, the lower electrode layer is a conductive hydrogel layer, the blind holes are cylindrical holes with the diameter of 1cm and the depth of 0.7cm, and the distribution density of the blind holes on the lower electrode layer is 1/10 cm2For example, the preparation method is described as follows:
(1) preparing a lower electrode layer with blind holes on the surface of one side;
the bottom belt is made by 3D printing method with diameter of 1cm, depth of 0.7cm and thickness of 1/10 cm2The cylindrical raised dies are uniformly distributed in a density distribution row-column mode; mixing 2.30g of AAM (acrylamide, 99%), 1.50mg of MBAA (N, N' -methylenebis (acrylamide), 99%) and 0.02g of photoinitiator 2959 in 7.66mL of 2M HCl (hydrochloric acid, 37.5 wt%), pouring the solution into a mold, initiating with ultraviolet light for 40 minutes under the action of a photoinitiator 2959 by using MBAA as a crosslinking agent, thereby generating a polyacrylamide (PAAm) hydrogel layer with blind holes arranged on one side;
(2) bonding the piezoelectric film to the lower electrode layer;
thermally bonding the blind hole side of the PAAm hydrogel layer with a commercially available PVDF film;
(3) bonding the piezoelectric film to the upper electrode layer;
the top electrode layer was formed by silver plating the surface of a commercially available PVDF membrane away from the PAAm hydrogel layer.
Claims (4)
1. High-efficiency sound-electricity conversion deviceFlexible acoustic sensor of nature, characterized by: the piezoelectric ceramic composite material is provided with a composite layer structure, wherein the composite layer is three layers and comprises an upper electrode layer, a piezoelectric film layer and a lower electrode layer which are adjacent in sequence; the thicknesses of the upper electrode layer, the piezoelectric film layer and the lower electrode layer are respectively 5-20 microns, 30-100 microns and 0.5-3 cm; the piezoelectric film layer is a PVDF film layer, and the PVDF film is prepared by adopting an electrostatic spinning method; the lower electrode layer is a conductive hydrogel layer or a conductive rubber layer, the lower electrode layer is provided with a blind hole, the surface of the lower electrode layer where the orifice of the blind hole is located is combined with the piezoelectric film layer, the diameter of the blind hole is 1cm, the depth of the blind hole is 0.7cm, and the distribution density of the blind hole is 1/2-12 cm2The blind hole is cylindrical; the maximum voltage output of the flexible acoustic sensor under the acoustic wave with decibel of 80dB and frequency of 220Hz is 1.0-3.5 mV/cm2。
2. A flexible acoustic sensor having efficient acousto-electric conversion characteristics according to claim 1, wherein the upper electrode layer is a metal plating.
3. The flexible acoustic sensor with high-efficiency acoustoelectric conversion characteristics according to claim 1, wherein the piezoelectric film layer is a PVDF film layer doped with multi-walled carbon nanotubes and/or nano-montmorillonite, the doping amounts of the multi-walled carbon nanotubes and the nano-montmorillonite are 0.03-0.1 wt% and 0.5-1.5 wt%, respectively, and the PVDF film doped with the multi-walled carbon nanotubes and/or the nano-montmorillonite is prepared by an electrostatic spinning method.
4. The flexible acoustic sensor having high efficiency acousto-electric conversion characteristics according to claim 1, wherein the piezoelectric film layer and the lower electrode layer are bonded by adhesion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910571842.5A CN110350078B (en) | 2019-06-28 | 2019-06-28 | Flexible acoustic sensor with high-efficiency acoustoelectric conversion characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910571842.5A CN110350078B (en) | 2019-06-28 | 2019-06-28 | Flexible acoustic sensor with high-efficiency acoustoelectric conversion characteristic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110350078A CN110350078A (en) | 2019-10-18 |
| CN110350078B true CN110350078B (en) | 2021-01-05 |
Family
ID=68176894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910571842.5A Active CN110350078B (en) | 2019-06-28 | 2019-06-28 | Flexible acoustic sensor with high-efficiency acoustoelectric conversion characteristic |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110350078B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112929802A (en) * | 2021-01-25 | 2021-06-08 | 清华大学 | High-sensitivity miniature self-powered acoustic-electric converter based on two-dimensional film |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2264802A1 (en) * | 2009-06-19 | 2010-12-22 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method for manufacturing a mainly film shaped piezoelectric element |
| CN102484201A (en) * | 2009-09-07 | 2012-05-30 | 日本碍子株式会社 | Method for manufacturing piezoelectric/electrostrictive film type element |
| US20140230557A1 (en) * | 2013-02-20 | 2014-08-21 | Agency for Science Technology and Research (A"STAR) | Sensor with vacuum-sealed cavity |
| CN104065301A (en) * | 2014-06-06 | 2014-09-24 | 上海交通大学 | Piezoelectric static composite-type low-frequency vibration energy collector |
| US20160182011A1 (en) * | 2012-10-25 | 2016-06-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having integrated lateral feature and temperature compensation feature |
| CN105763169A (en) * | 2015-01-06 | 2016-07-13 | 珠海越亚封装基板技术股份有限公司 | Film bulk acoustic resonator filter |
| CN105871249A (en) * | 2015-01-19 | 2016-08-17 | 北京纳米能源与系统研究所 | Acoustic-electric conversion component, and charging device and sound signal gatherer using acoustic-electric conversion component |
| CN106602924A (en) * | 2016-11-18 | 2017-04-26 | 北京纳米能源与系统研究所 | Frictional nano-generator for collecting vibration energy and vibration sensor |
| CN107920324A (en) * | 2016-10-07 | 2018-04-17 | 成均馆大学校产学协力团 | Microphone and method for manufacturing the same |
| US20180160248A1 (en) * | 2015-07-27 | 2018-06-07 | Fujifilm Corporation | Electroacoustic transduction film and manufacturing method thereof, electroacoustic transducer, flexible display, vocal cord microphone, sensor for musical instrument |
| CN207506590U (en) * | 2017-04-06 | 2018-06-19 | 纳智源科技（唐山）有限责任公司 | Sonic sensor and the fetal rhythm monitoring device for including it |
| CN207910959U (en) * | 2018-01-31 | 2018-09-25 | 瑞声声学科技(深圳)有限公司 | Microphone |
| CN109528504A (en) * | 2019-01-07 | 2019-03-29 | 东华大学 | A kind of micro-current freckle-removing mask and preparation method thereof with acoustic response characteristic |
| CN109643378A (en) * | 2018-11-20 | 2019-04-16 | 深圳市汇顶科技股份有限公司 | Supersonic changer element and electronic device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101386009B1 (en) * | 2012-07-12 | 2014-04-16 | 한국세라믹기술원 | Ultrasonic transducer for super-directional speaker and method for manufacturing the same |
-
2019
- 2019-06-28 CN CN201910571842.5A patent/CN110350078B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2264802A1 (en) * | 2009-06-19 | 2010-12-22 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method for manufacturing a mainly film shaped piezoelectric element |
| CN102484201A (en) * | 2009-09-07 | 2012-05-30 | 日本碍子株式会社 | Method for manufacturing piezoelectric/electrostrictive film type element |
| US20160182011A1 (en) * | 2012-10-25 | 2016-06-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having integrated lateral feature and temperature compensation feature |
| US20140230557A1 (en) * | 2013-02-20 | 2014-08-21 | Agency for Science Technology and Research (A"STAR) | Sensor with vacuum-sealed cavity |
| CN104065301A (en) * | 2014-06-06 | 2014-09-24 | 上海交通大学 | Piezoelectric static composite-type low-frequency vibration energy collector |
| CN105763169A (en) * | 2015-01-06 | 2016-07-13 | 珠海越亚封装基板技术股份有限公司 | Film bulk acoustic resonator filter |
| CN105871249A (en) * | 2015-01-19 | 2016-08-17 | 北京纳米能源与系统研究所 | Acoustic-electric conversion component, and charging device and sound signal gatherer using acoustic-electric conversion component |
| US20180160248A1 (en) * | 2015-07-27 | 2018-06-07 | Fujifilm Corporation | Electroacoustic transduction film and manufacturing method thereof, electroacoustic transducer, flexible display, vocal cord microphone, sensor for musical instrument |
| CN107920324A (en) * | 2016-10-07 | 2018-04-17 | 成均馆大学校产学协力团 | Microphone and method for manufacturing the same |
| CN106602924A (en) * | 2016-11-18 | 2017-04-26 | 北京纳米能源与系统研究所 | Frictional nano-generator for collecting vibration energy and vibration sensor |
| CN207506590U (en) * | 2017-04-06 | 2018-06-19 | 纳智源科技（唐山）有限责任公司 | Sonic sensor and the fetal rhythm monitoring device for including it |
| CN207910959U (en) * | 2018-01-31 | 2018-09-25 | 瑞声声学科技(深圳)有限公司 | Microphone |
| CN109643378A (en) * | 2018-11-20 | 2019-04-16 | 深圳市汇顶科技股份有限公司 | Supersonic changer element and electronic device |
| CN109528504A (en) * | 2019-01-07 | 2019-03-29 | 东华大学 | A kind of micro-current freckle-removing mask and preparation method thereof with acoustic response characteristic |
Non-Patent Citations (1)
| Title |
|---|
| 静电纺压电纳米纤维膜在声电转换器件中的应用研究;郎晨宏;《中国博士学位论文全文数据库 工程科技Ⅰ辑》;20171115(第11期);第1、13、30-36、44-57页，图4-10、5-5 - 5-28 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110350078A (en) | 2019-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhong et al. | A flexible piezoelectret actuator/sensor patch for mechanical human–machine interfaces | |
| TWI400964B (en) | Sound-generating device | |
| CN104836473B (en) | Acquire the generator and sound transducer of acoustic energy | |
| US20230358601A1 (en) | Sensing devices | |
| JP6086881B2 (en) | Electroacoustic transducer and display device | |
| CN103428622A (en) | Piezoelectric speaker having weight and method of producing the same | |
| Kim et al. | Enhanced piezoelectricity in a robust and harmonious multilayer assembly of electrospun nanofiber mats and microbead-based electrodes | |
| TW201026088A (en) | Micro-speaker device and method of manufacturing the same | |
| CN110350078B (en) | Flexible acoustic sensor with high-efficiency acoustoelectric conversion characteristic | |
| CN105769136A (en) | Self power supply pressure vibrating sensor | |
| CN110296755B (en) | Flexible acoustic sensor with high acoustic-electric conversion efficiency | |
| CN103283261A (en) | Acoustic actuator and acoustic actuator system | |
| US8758217B2 (en) | Piezoelectric nanowire vibration sensors | |
| CN111982362B (en) | Method for preparing high-sensitivity flexible piezoresistive sensor based on fracture microstructure | |
| CN110311032B (en) | Flexible acoustic sensor with high sound-electricity conversion efficiency | |
| CN101656906B (en) | Speaker monomer structure | |
| CN115066760A (en) | Piezoelectric film | |
| US11930714B2 (en) | Piezoelectric film | |
| CN101931850A (en) | Micro-speaker and manufacturing method thereof | |
| CN201248132Y (en) | Multilayer piezoelectric loudspeaker for mobile communication | |
| Park et al. | Textile speaker using polyvinylidene fluoride/ZnO nanopillar on Au textile for enhancing the sound pressure level | |
| CN109195087B (en) | Multilayer carbon nanotube film stack speaker based on thermoacoustic effect | |
| TW202108377A (en) | Polymer composite piezoelectric body, and piezoelectric film | |
| Lang et al. | Recent Advances in Acoustoelectric Conversion of Piezoelectric Electrospun Nanofibers | |
| Yang et al. | Bimorph piezoelectric MEMS microphone with tractive structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |