CN109600118A - Harmonic injection suitable for F class high efficiency power amplifier is theoretical - Google Patents
Harmonic injection suitable for F class high efficiency power amplifier is theoretical Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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Abstract
It is theoretical that the present invention discloses a kind of harmonic injection suitable for F class high efficiency power amplifier, parameter related with the power level of description transistor nonlinear characteristic and input grid voltage is calculated including step, drain efficiency when second harmonic injection is calculated according to the parameter, the ratio of power when being injected according to second harmonic and power when not carrying out harmonic injection, calculate output power when second harmonic injection, when establishing second harmonic injection calculated drain efficiency output power and obtain to input terminal grid voltage waveform, the relationship of output end drain voltage waveform and current waveform；Transistor input terminal grid voltage waveform is controlled according to above-mentioned relationship, to realize control transistor drain efficiency and output power.The present invention, which is able to achieve, quickly calculates best injection waveform.
Description
Technical field
The present invention relates to wireless communication power amplifier technique fields, are suitable for F class highly efficient power more particularly to one kind
The harmonic injection of amplifier is theoretical.
Background technique
With the fast development of the third generation mobile communication system (5G), the radio frequency transceiver as the system core also faces
The change and update of a new round.High efficiency, high power, high-gain, the index of high linearity have increasingly becomed people and have been closed
The focus of note.And in the system of entire radio frequency transceiver, radio-frequency power amplifier is the maximum module of energy consumption.Therefore power
The efficiency of amplifier directly determines the energy consumption magnitude of entire launch terminal.If promoting the work effect of radio-frequency power amplifier
Rate, so that it may the power consumption of whole system is reduced, to meet the performance requirement of communication system of new generation.Current highly efficient power
There are mainly two types of amplifiers: switch power-like amplifier (the most typical with E power-like amplifier) and harmonic tuning class power are put
Big device (the most typical with F power-like amplifier).
Switch power-like amplifier the characteristics of be；High-efficient, structure is simple, is easy to implement.But there are carrier frequencies for it not
The disadvantages of height, drain electrode crest voltage is high.And the above problem is then not present in harmonic tuning class power amplifier, therefore, it has become power amplifier researchs
One of popular domain.The characteristics of conventional harmonic tuning class power amplifier is by transistor output drain voltage and drain electrode electricity
Stream carries out harmonic controling, so that it be made to mutually stagger in the waveform of time domain, and then reaches efficient purpose.In recent years, novel
Harmonic tuning class power amplifier then from the input terminal of transistor carry out harmonic controling research, thus reach promoted harmonic tuning class
The purpose of power amplification efficiency.2017, Amirreza et al. carried out harmonic injection to J class power amplifier based on theoretical and emulation for the first time
Theoretical research show that semisinusoidal waveform injection can be such that the power of J class power amplifier and efficiency is significantly promoted.
Summary of the invention
In view of the technical drawbacks of the prior art, it is an object of the present invention to provide one kind to be suitable for the efficient function of F class
The harmonic injection of rate amplifier is theoretical, can calculate the best injection waveform of the efficient power amplifier of F class, and then reach from input terminal
Harmonic injection is carried out to promote the purpose of F class efficient power amplifier power and efficiency.
The technical solution adopted to achieve the purpose of the present invention is:
A kind of harmonic injection suitable for F class high efficiency power amplifier is theoretical, comprising steps of
Calculate the power series a with description transistor nonlinear characteristic0-a5And related two parameters of input grid voltage
m1, m2, according to parameter m1,m2Calculate drain efficiency η when second harmonic injectionF,
Power P when being injected according to second harmonic 'outWith power P when not carrying out harmonic injectionoutRatio, that is, inject
Power ratio PnorRelational expression calculates the output power P ' when second harmonic injectionout,
Indicate initial phase of the gate input voltage second harmonic relative to fundamental wave, VdcIndicate the supply voltage of transistor
And VkIndicate the knee-point voltage of transistor, Vgs2, Vgs1Respectively indicate the second harmonic injection amplitude and grid of gate input voltage
The fundamental voltage amplitude of input voltage；
Establish calculated drain efficiency η when second harmonic injectionF, output power P 'out, with acquisition to input terminal grid
Pole tension waveform, the relationship of output end drain voltage waveform and current waveform；
Transistor input terminal grid voltage waveform is controlled according to above-mentioned relationship, to realize control transistor drain effect
Rate and output power.
The parameter m1,m2Show as follows:
Wherein Vgs0Indicate the DC terms of gate input voltage.
Harmonic injection suitable for F class high efficiency power amplifier of the invention is theoretical, is able to achieve and quickly calculates best note
Enter waveform, illustrates that the promotion of F class power amplifier power and efficiency can be realized by input terminal harmonic injection, and its is optimal
Injection waveform is also that multistage F class power amplifier is mutually cascaded and had laid a good foundation.
Detailed description of the invention
Fig. 1 is the F class high efficiency power amplifier schematic diagram based on field-effect tube model；
Fig. 2 a parameter m when second harmonic injects1=-06, m2In the case where=1.4, injecting power ratio PnorWithWith
Vgs2/Vgs1The contour map of variation；
Fig. 2 b parameter m when second harmonic injects1=-06, m2In the case where=1.5, injecting power ratio PnorWithWith
Vgs2/Vgs1The contour map of variation；
Fig. 2 c parameter m when second harmonic injects1=-06, m2In the case where=1.6, injecting power ratio PnorWithWith
Vgs2/Vgs1The contour map of variation；
Fig. 2 d parameter m when second harmonic injects1=-06, m2In the case where=1.4, drain efficiency ηFWithAnd Vgs2/
Vgs1The contour map of variation；
Fig. 2 e parameter m when second harmonic injects1=-06, m2In the case where=1.5, drain efficiency ηFWithAnd Vgs2/
Vgs1The contour map of variation；
Fig. 3 a is that ADS of the F class high efficiency power amplifier in sine wave injection emulates schematic diagram；
Fig. 3 b is that ADS of the F class high efficiency power amplifier in second harmonic injection emulates schematic diagram；
Fig. 4 a is grid voltage waveform of the F class high efficiency power amplifier in sine wave injection；
Fig. 4 b is grid voltage waveform of the F class high efficiency power amplifier in second harmonic injection；
Fig. 5 a is drain voltage waveform and current waveform of the F class high efficiency power amplifier in sine wave injection；
Fig. 5 b is drain voltage waveform and current waveform of the F class high efficiency power amplifier in second harmonic injection.
Specific embodiment
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.It should be appreciated that described herein
Specific embodiment be only used to explain the present invention, be not intended to limit the present invention.
Harmonic injection theory suitable for F class high efficiency power amplifier is realized by following steps:
In traditional F class high efficiency power amplifier (assuming that used transistor is FET pipe), when transistor input terminal
Grid voltage be sine wave injection when, input voltage VgsThe expression formula of (θ) are as follows:
Vgs(θ)=Vgs0+Vgs1sin(θ) (1)
Wherein Vgs0Indicate the DC terms of gate input voltage, Vgs1Indicate the fundamental voltage amplitude of gate input voltage.
Due to the nonlinear effect of transistor, the relationship of input voltage and output electric current can be expressed as power series
Form, it may be assumed that
Wherein a0-a5Indicate the coefficient of power series, iF(θ) indicates the output electric current of drain electrode.
Therefore, in the case where (1) formula being brought into the available sinusoidal voltage waveform injection of (2) formula, the expression of drain current
Formula, it may be assumed that
iF(θ)=Idc+i1(θ)+i2(θ)+i3(θ)+i4(θ)+i5(θ) (3)
As can be seen from the above equation, in the case where sinusoidal voltage waveform injects, drain current produces DC terms, fundamental wave
Item and higher hamonic wave item.And for power amplifier efficient for F class, the impedance conditions of odd harmonic is open a way, therefore drain current
Triple-frequency harmonics item i3(θ) should be zero in impedance endface.Generated triple-frequency harmonics drain current i3(θ) will be from transistor
It is leaked out to ground terminal, as shown in Figure 1.
If setting the drain electrode triple harmonic current of leakage as i3(θ), expression formula are as follows:
i3(θ)=r3 cos(3θ)+q3 sin(3θ) (4)
Wherein r3And q3For the real part coefficient and imaginary part coefficient of its Fourier expansion formula.
Then in the drain current i ' of impedance endfaceF(θ) should are as follows:
i'F(θ)=iF(θ)-i3(θ) (5)
Drain current i ' at this timeF(θ) is not include triple harmonic current, therefore do not have in its Fourier expansion formula
Cubic term, it may be assumed that
From above formula it can be concluded that r3And q3Value:
r3=0 (8)
Similar, 5 subharmonic i5The real part coefficient and imaginary part coefficient of (θ) are also available:
r5=0 (10)
Meanwhile the drain current canonical form of F class are as follows:
Wherein ImaxIndicate that the maximum current of transistor drain, θ indicate phase angle.
When not carrying out harmonic injection, the drain current i ' that is obtained by power seriesF(θ) should be with the drain electrode electricity of F class standard
Flow it is equal, to meet the condition of F class, it may be assumed that
When the grid voltage of transistor input terminal has second harmonic injection, input voltage VgsThe expression formula of (θ) are as follows:
Wherein Vgs0And Vgs1Still indicate the DC terms and fundamental voltage amplitude of gate input voltage.Vgs2Indicate grid input electricity
The secondary harmonic amplitude of pressure.Indicate initial phase of the gate input voltage second harmonic relative to fundamental wave.
At this point, formula (17) to be brought into the drain current expression formula when injection of formula (2) available second harmonic
That is:
It can be seen that the injection of input terminal second harmonic, the harmonic wave of higher order is generated in output end.
The canonical form of F class drain voltage are as follows:
Vds(θ)=Vdc+(Vdc-Vk)(1.2071 sin(θ)+0.2804 sin(3θ)+0.0733 sin(5θ)) (19)
Wherein VdcIndicate the supply voltage of drain electrode, VkIndicate the knee-point voltage of transistor.
Drain current identity (13)-(16) when according to unimplanted harmonic wave, the drain current after second harmonic injection
The drain voltage expression formula (19) of expression formula (18) and F class can calculate the output power P ' in second harmonic injectionout,
And then calculate power P when second harmonic injection 'outWith power P when not carrying out harmonic injectionoutRatio, i.e., injection function
Rate ratio Pnor:
Wherein m1,m2Indicate the power series a with description transistor nonlinear characteristic0-a5And input grid voltage is related
Two parameters, expression such as (21), shown in (22).
Drain current identity (13)-(16) when according to unimplanted harmonic wave, the drain current after second harmonic injection
Expression formula (18), the drain voltage expression formula (19) and m of F class1,m2Expression (21), (22) can also be calculated secondary
Drain efficiency η when harmonic injectionFExpression formula, it may be assumed that
For a certain specific FET transistor, if its power series for describing transistor nonlinear characteristic can be fitted
a0-a5, supply voltage VdcWith knee-point voltage Vk, so that it may with obtain input terminal second harmonic injection after only withAnd Vgs2/Vgs1
Related injecting power ratio Pnor, drain efficiency ηFExpression formula, and then acquire its optimal second harmonic injection amplitude Vgs2With
And initial phase
As shown in Fig. 2 a-2f, according to formula (20) and (23), available injecting power ratio PnorWith drain efficiency ηFJoining
Number m1=-06, m2In the case where=1.4,1.5,1.6, value withAnd Vgs2/Vgs1The contour map of variation.It can be with from figure
It is concluded that
For different parameter m1,m2, maximum output power and drain efficiency can be fromAnd Vgs2/Vgs1Solution
Concentration obtains.Maximum output power can than it is unimplanted when be higher by 1.2dB (Pnor=1.33).In addition, maximum drain efficiency
It can achieve 91.0%, the theoretical efficiency (82.77%) when being significantly higher than unimplanted.Therefore, when input terminal have it is optimal secondary humorous
When wave injects, performance can be greatly improved.
For different parameter m1,m2, optimal Vgs2/Vgs1It is different.Therefore, value depends on the spy of transistor
Property.However optimal phaseIt is identical.That isIt is a fixed value (3 pi/2), value is not with the change of transistor
Change and changes.This is a highly useful conclusion, for selection more high-output power and efficiency F class power amplifier it is secondary humorous
Wave phase has very big side.
The advantage of harmonic injection theory of the invention is, can calculate the best injection wave of the efficient power amplifier of F class
Shape, this best injection waveform are not only advantageous for promoting the efficiency and output power of the efficient power amplifier of F class, expand F class power amplifier
Application scenarios and application prospect also mutually cascade for the multistage efficient power amplifier of F class and have established theoretical basis.
In the following, according to above-mentioned technology actual test, the practical application efficient power amplifier of harmonic injection theoretical calculation F class is most
Good injection waveform.Used transistor selects the GaN HEMT CGH60010D of Wolfspeed company.Select this crystal
The reason of pipe is that its is non-linear very strong, can provide harmonic wave required for F class power amplifier, while it is smaller to encapsulate parasitic effects, can be most
Reflect to big degree the performance of transistor itself.The transistor is as follows by the specific value for the relevant parameter that manufacturer provides: mark
Quasi- drain voltage be 28V, knee-point voltage 2.4V, transistor drain maximum current be 1.74A. therefore, select in specific implementation
Taking drain bias is 28V, grid bias Vgs0For -3.0V, the sinusoidal voltage amplitude V of grid inputgs1For 5.4V.Pass through (23)
It can be calculated: drain efficiency ηFMaximum value in Vgs2/Vgs1=0.2511, initial phasePlace.
Fig. 3 a is the schematic diagram for building ADS emulation platform to the efficient power amplifier of F class in the case where not carrying out harmonic injection.
Wherein the harmonic controling of output end is at 3 times, to meet the resistance requirements of F class power amplifier.Fig. 3 b is the case where second harmonic injects
Under the schematic diagram of ADS emulation platform is built to the efficient power amplifier of F class.Fig. 4 a is the input terminal in the case where not carrying out harmonic injection
Grid voltage waveform.Fig. 4 b is the grid voltage waveform of input terminal in the case where second harmonic injection.Fig. 5 a be not into
The drain voltage waveform and current waveform of output end in the case where row harmonic injection.Fig. 5 b is the case where second harmonic injects
The drain voltage waveform and current waveform of lower output end, it can be seen that drain waveforms when injecting and is unimplanted meet F
The time domain waveform of class power amplifier.
Table 1
Table 1 illustrate the output power for not carrying out theoretical calculation and emulation when harmonic injection and second harmonic inject and
Drain efficiency.Through above-mentioned simulation result compared with the calculated results, it can be found that following conclusion:
1, compared with the performance of unimplanted F class power amplifier, in the case where theoretical optimum waveform injection, output power and leakage
Pole efficiency increases 20.6% and 6.6% respectively.Therefore the method that can prove second harmonic injection improves F class function really
The overall performance put further expands the application scenarios and application prospect of the efficient power amplifier of F class.
2, the relative error of the simulation result and the calculated results of output power and drain efficiency is very small.For example, working as
When optimum waveform is injected, the relative error of the simulation result and the calculated results of output power and drain efficiency only has respectively
1.3% and 2.4%.Therefore, a kind of the correct of harmonic injection theory suitable for F power-like amplifier can be verified
Property.
3, the second harmonic phase of theoretical optimum waveformFor 3 pi/2s.The theoretical second harmonic of this and half-sine wave is unfolded
The phase of item is consistent.The ratio V of optimum waveform secondary harmonic amplitude and fundamental voltage amplitude simultaneouslygs2/Vgs1It is 0.25, this and semisinusoidal
Theoretical value (0.42) be close.Therefore, the optimal injection waveform of F class approximate can understand subject to half-sine wave, such as Fig. 4 b institute
Show.And this conclusion also will to double-stage high-efficient F power-like amplifier it is mutual cascade lay the foundation, i.e., if previous stage it is defeated
Outlet can provide a semisinusoidal voltage waveform, and the performance that two-stage cascade gets up must be optimal.
The above is only a preferred embodiment of the present invention, it is noted that for the common skill of the art
For art personnel, various improvements and modifications may be made without departing from the principle of the present invention, these are improved and profit
Decorations also should be regarded as protection scope of the present invention.
Claims (2)
1. the harmonic injection for being suitable for F class high efficiency power amplifier is theoretical, which is characterized in that comprising steps of
Calculate the power series a with description transistor nonlinear characteristic0-a5And the related two parameter m of input grid voltage1,m2,
According to parameter m1,m2Calculate drain efficiency η when second harmonic injectionF,
Power P when being injected according to second harmonic 'outWith power P when not carrying out harmonic injectionoutRatio, i.e. injecting power
Compare PnorRelational expression calculates the output power P ' when second harmonic injectionout,
Indicate initial phase of the gate input voltage second harmonic relative to fundamental wave, VdcIndicate the supply voltage and V of transistorkTable
Show the knee-point voltage of transistor, Vgs2, Vgs1Respectively indicate the second harmonic injection amplitude and grid input electricity of gate input voltage
The fundamental voltage amplitude of pressure；
Establish calculated drain efficiency η when second harmonic injectionF, output power P 'out, with acquisition to input terminal grid voltage
Waveform, the relationship of output end drain voltage waveform and current waveform；
According to above-mentioned relationship to transistor input terminal grid voltage waveform control, with realize control transistor drain efficiency and
Output power.
2. theoretical suitable for the harmonic injection of F class high efficiency power amplifier as described in claim 1, which is characterized in that the ginseng
Number m1,m2Show as follows:
Wherein Vgs0Indicate the DC terms of gate input voltage.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5105167A (en) * | 1991-03-28 | 1992-04-14 | Honeywell Inc. | Harmonic injection amplifier |
| US5172072A (en) * | 1991-09-06 | 1992-12-15 | Itt Corporation | High efficiency harmonic injection power amplifier |
| CN107911088A (en) * | 2017-10-26 | 2018-04-13 | 天津大学 | For match circuit between the double-frequency broadband power-amplifier stage of GaN power devices |
| CN108712154A (en) * | 2018-05-22 | 2018-10-26 | 杭州电子科技大学 | A kind of broadband F power-like amplifiers and design method |
-
2018
- 2018-11-16 CN CN201811365632.2A patent/CN109600118B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5105167A (en) * | 1991-03-28 | 1992-04-14 | Honeywell Inc. | Harmonic injection amplifier |
| US5172072A (en) * | 1991-09-06 | 1992-12-15 | Itt Corporation | High efficiency harmonic injection power amplifier |
| CN107911088A (en) * | 2017-10-26 | 2018-04-13 | 天津大学 | For match circuit between the double-frequency broadband power-amplifier stage of GaN power devices |
| CN108712154A (en) * | 2018-05-22 | 2018-10-26 | 杭州电子科技大学 | A kind of broadband F power-like amplifiers and design method |
Non-Patent Citations (2)
| Title |
|---|
| JOON HYUNG KIM,等: ""Modeling and Design Methodology of High-Efficiency Class-F and Class-F-1 Power Amplifiers"", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》 * |
| 李咏乐，等: ""基于GaN器件的连续型高效宽带功率放大器设计"", 《微波学报》 * |
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