CN104953966B - A kind of compensation circuit of E power-like amplifiers and its device parameters acquisition methods - Google Patents
A kind of compensation circuit of E power-like amplifiers and its device parameters acquisition methods Download PDFInfo
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- CN104953966B CN104953966B CN201510334523.4A CN201510334523A CN104953966B CN 104953966 B CN104953966 B CN 104953966B CN 201510334523 A CN201510334523 A CN 201510334523A CN 104953966 B CN104953966 B CN 104953966B
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- 238000005265 energy consumption Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
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Abstract
The invention belongs to power amplifier fields, provide a kind of compensation circuit of E power-like amplifiers and its device parameters acquisition methods.The compensation circuit of E power-like amplifiers includes connection transistor and misses and drain the first inductance of bias supply；It is connected with the first inductance in parallel, and the second inductance being connected between transistor drain and the second capacitance；The second capacitance that the second inductance is connected between the bias supply that drains realizes compensation circuit using discrete component.The present invention reduces the micro-strip size in compensation circuit when frequency is relatively low by the compensation circuit of the E power-like amplifiers and its device parameters acquisition methods.
Description
Technical field
The invention belongs to power amplifier field, the more particularly to a kind of compensation circuit and its device of E power-like amplifiers
Parameter acquiring method.
Background technology
At present, the fast-developing of mobile communication service proposes higher requirement to low energy consumption, the design of efficient device.
And radio-frequency power amplifier exactly consumes energy in wireless transmission terminal maximum module.Therefore the efficiency of power amplifier is directly determined
The energy consumption magnitude of entire launch terminal is determined.So the work efficiency for improving power amplifier becomes power amplifier research neck
The hot spot in domain.
The advantages that E power-like amplifiers are simple in structure, easy to implement when its ideal operation efficiency can reach 100%,
In recent years, extensive research and application are received in frequency microwave field.However, in a practical situation, E power-like amplifiers
Higher efficiency is largely dependent upon the characteristic of transistor.Wherein, the output capacitance of transistor internal is limitation E class power
The most important factor of amplifier operation frequency.How to solve that transistor internal output capacitance is extra and the working frequency brought
Limitation, be the hot spot studied in recent years in E power-like amplifiers field.
Since the parameter of given transistor internal is all fixed, so the most popular method for solving the problems, such as this is profit
Extra capacitance is compensated with external circuit, to expand the working frequency of E power-like amplifiers.The prior art uses following compensation
Circuit：Link the first microstrip transmission line of transistor drain, short circuit branch line and open circuit branch line；Link short circuit branch line is opened
Second microstrip transmission line of road branch line and drain electrode bias supply；It is linked in the first microstrip transmission line and the second microstrip transmission line connects
Connect the short circuit branch line at place；And it is linked in the first microstrip transmission line and the open circuit branch line of the second microstrip transmission line junction.
The prior art has following defect：When frequency is relatively low, micro-strip size is relatively excessive.
The content of the invention
The present invention provides a kind of compensation circuit of E power-like amplifiers and its device parameters acquisition methods, it is intended to solve
The compensation circuit of existing E power-like amplifiers the technical issues of micro-strip size is relatively excessive when frequency is relatively low.
The present invention is achieved in that a kind of compensation circuit of E power-like amplifiers, including：
Connect the first inductance of transistor drain and the bias supply that drains；
It is connected with first inductance in parallel, and the second electricity being connected between the drain electrode bias supply and the second capacitance
Sense；
Second capacitance being connected between second inductance and the transistor drain.
On the other hand, the present invention also provides a kind of E power-like amplifiers, the E power-like amplifiers include above-mentioned
Compensation circuit.
On the other hand, the present invention also provides a kind of E power-like amplifiers compensation circuit device parameters acquisition side
Method, including：
Determine the design parameter of the E power-like amplifiers, the design parameter includes the reason of the E power-like amplifiers
By required inductance value and capacitance coefficient, the capacitance coefficient is the ratio of capacitance needed for extra capacitance and theory；
Calculate the parameter of first inductance, second inductance and second capacitance respectively using following formula：
Wherein L1For the inductance value of first inductance, L2For the inductance value of second inductance, C2For second capacitance
Capacitance, a be the first parameter, b be the second parameter, L be the E power-like amplifiers theory needed for inductance value,To be described
Capacitance coefficient, ω0For the angular frequency of fundamental wave.
The advantageous effect that technical solution provided by the invention is brought is：
It was found from the invention described above, miss and drain the first inductance of bias supply due to including connecting transistor；With
One inductance in parallel connects, and the second inductance being connected between transistor drain and the second capacitance；It is connected to the second inductance and leakage
The second capacitance between the bias supply of pole realizes compensation circuit using discrete component, therefore, compensation is reduced when frequency is relatively low
Micro-strip size in circuit.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is the exemplary circuit figure of the compensation circuit of E power-like amplifiers provided in an embodiment of the present invention；
Fig. 2 is the equivalent circuit diagram of the compensation circuit of E power-like amplifiers provided in an embodiment of the present invention；
Fig. 3 is the complete circuit diagram of the compensation circuit of E power-like amplifiers provided in an embodiment of the present invention；
Fig. 4 is the simulation waveform of the compensation circuit of E power-like amplifiers provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the present invention provides a kind of structure of the compensation circuit Lnex of E power-like amplifiers, as shown in Figure 1, including
Connect the first inductance L1 of transistor drain and the bias supply Vdd that drains；It is connected in parallel with the first inductance L1, and is connected to drain electrode
The second inductance L2 between bias supply Vdd and the second capacitance C2；Be connected between the second inductance L2 and transistor drain
Two capacitance C2.
In specific implementation, the compensation circuit of first inductance, second inductance and second capacitance composition can be with
It is equivalent to fundamental wave and second harmonic shunt inductance.
A kind of E power-like amplifiers, E power-like amplifiers include above-mentioned compensation circuit.
As shown in Figure 1, E power-like amplifiers further include transistor Q, output capacitance Cout, drain electrode bias supply Vdd, grid
Pole bias supply Vgg, input voltage vin, load resistance R0, series filtering capacitance C0 and series filtering inductance L0, transistor Q
Including output capacitance Cout, output capacitance Cout is connected between the drain electrode of transistor Q and the source electrode of transistor Q.
The drain electrode of transistor Q is connected with the first end of series filtering inductance L0, the grid and input voltage vin of transistor Q
Anode connection, the cathode of the source electrode of transistor Q and the first end of load resistance R0 and the bias supply Vdd that drains is connected, input
The cathode of voltage Vin is connected with the anode of gate bias supplies Vgg, second end and the series filtering capacitance of series filtering inductance L0
The first end connection of C0, the second end of load resistance R0 are connected with the second end of series filtering capacitance C0.
Wherein, output capacitance Cout is determined by the transistor selected；Drain bias supply Vdd and gate bias supplies Vgg
It is determined by the required output power of selection transistor, load resistance R0, series filtering capacitance C0 and series filtering inductance L0 are by work
Working frequency and E class power amplifiers operating mode determine.
The embodiment of the present invention provides the device parameters acquisition methods of the compensation circuit of E power-like amplifiers, including following step
Suddenly：
101：Determine the design parameter of E power-like amplifiers, design parameter includes electricity needed for the theory of E power-like amplifiers
Inductance value and capacitance coefficient, capacitance coefficient are the ratio of capacitance needed for extra capacitance and theory.
102：Calculate the parameter of the first inductance, the second inductance and the second capacitance respectively using following formula：
Wherein L1For the inductance value of the first inductance L1, L2For the inductance value of the second inductance L2, C2For the capacitance of the second capacitance C2
Value, a are the first parameter, and b is the second parameter, and L is inductance value needed for the theory of E power-like amplifiers,For capacitance coefficient, ω0For
The angular frequency of fundamental wave.
Preferably, step 101-2 is further included before step 102.
101-2：Default second parameter.
In specific implementation, the value of the second parameter can be more than 0.25 and less than 1.It for example, can be first in the value range of b
It is interior to determine specific numerical value 0.5, then solve the first inductance L1, the second inductance L2, the parameter of the second capacitance C2.
As shown in Fig. 2, the embodiment of the present invention provides the equivalent circuit diagram of the compensation circuit of E power-like amplifiers, including mending
Repay capacitance C needed for the equivalent inductance Lnex, transistor Q, theory of circuit, inductance L, extra capacitance Cex, drain electrode are inclined needed for theory
Put power supply Vdd, gate bias supplies Vgg, input voltage vin, load resistance R0, series filtering capacitance C0 and series filtering electricity
Feel L0, transistor Q includes capacitance C and extra capacitance Cex needed for theory, and capacitance C needed for theory is connected to the drain electrode of transistor Q
Between the source electrode of transistor Q, extra capacitance Cex is connected between the drain electrode of transistor Q and the source electrode of transistor Q；Crystal
The drain electrode of pipe Q is connected with the first end of series filtering inductance L0 and the first end of equivalent inductance Lnex, the grid of transistor Q and institute
The anode connection of input voltage vin is stated, the source electrode of the transistor Q and the first end of the load resistance R0 and the drain electrode are inclined
The cathode connection of power supply Vdd is put, the cathode of the input voltage vin is connected with the anode of the gate bias supplies Vgg, described
The second end of series filtering inductance L0 is connected with the first end of the series filtering capacitance C0, the second end of the load resistance R0
It is connected with the second end of the series filtering capacitance C0, the second end of equivalent inductance Lnex and the anode of drain electrode bias supply Vdd
Connection.The input impedance of the compensation circuit of E power-like amplifiers can be represented with the following formula：
Wherein, Z (ω) be E power-like amplifiers compensation circuit input impedance, L1For the electricity of the first inductance L1 in Fig. 2
Inductance value, L2For the inductance value of the second inductance L2 in Fig. 2, C2For the capacitance of the second capacitance C2 in Fig. 2, ω is work angular frequency,
The fundamental wave input impedance X (ω of the compensation circuit of E power-like amplifiers0) and second harmonic impedance X (2 ω0) can be used to
Lower formula represents：
Wherein, ω0With 2 ω0The respectively angular frequency of fundamental wave and second harmonic, the first parameter a areSecond
Parameter b isCapacitance coefficientFor
Compensation circuit is equivalent to equivalent inductance Lnex, and by above-mentioned formula simultaneous, you can obtain the first inductance L1, second
Inductance L2, the parameter value formula of the second capacitance C2.
As shown in figure 3, the embodiment of the present invention provides the complete circuit diagram of the compensation circuit of E power-like amplifiers,
It includes input capacitance Cblock；The input matching circuit being made of the first capacitance C1 and the 3rd inductance L3；By gate inductance Lg,
The direct grid current biasing circuit that grid bypass capacitance Cbypass1 and resistance R is formed；By the first inductance L1, the second inductance L2
With the second capacitance C2 form compensation circuit, while this compensation circuit and capacitance of drain Cbypass2 collectively form drain electrode direct current it is inclined
Circuits；The fundamental wave filter being made of inductance L0 and capacitance C0；The output being made of the 3rd capacitance C3 and the 4th inductance L4
With circuit.
In specific implementation, the ldmos transistor of the 10W of model MRF21010 can be selected in transistor Q.When the E classes of design
The index of power amplifier is：Working frequency is 433MHz, drain bias voltage 20V, output power 10W, in transistor
The output capacitance Cout in portion is 10pF.Extra capacitance Cex is calculated as a result, as 5.389pF, capacitance coefficientFor 1.169.
The value of the second parameter b is taken to be equal to 0.5, the parameter that the compensation circuit of E power-like amplifiers is calculated is as follows：First inductance L1 is
7.65nH, the second inductance L2 are 28.4nH, and the second capacitance C2 is 1.874pF.
As shown in figure 4, the voltage and electricity of the transistor drain emulated in ADS softwares to the function of this compensation circuit
Flow waveform., it is clear that in time domain, voltage and current waveform almost without overlapping, that is, put by the E class power designed
The efficiency of big device is close to 100%.
In conclusion the embodiment of the present invention is missed and drained the first inductance of bias supply by including connecting transistor；
It is connected with the first inductance in parallel, and the second inductance being connected between transistor drain and the second capacitance；It is connected to the second inductance
The second capacitance between drain electrode bias supply is realized compensation circuit using discrete component, therefore, is reduced when frequency is relatively low
Micro-strip size in compensation circuit.
The embodiments of the present invention are for illustration only, do not represent the quality of embodiment.
One of ordinary skill in the art will appreciate that hardware can be passed through by realizing all or part of step of above-described embodiment
It completes, relevant hardware can also be instructed to complete by program, the program can be stored in a kind of computer-readable
In storage medium, storage medium mentioned above can be read-only memory, disk or CD etc..
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modifications, equivalent replacements and improvements are made should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of compensation circuit of E power-like amplifiers, which is characterized in that including：
Connect the first inductance of transistor drain and the bias supply that drains；
It is connected with first inductance in parallel, and the second inductance being connected between the drain electrode bias supply and the second capacitance；
Second capacitance being connected between second inductance and the transistor drain；
The compensation circuit of the E power-like amplifiers is suitable for the E power-like amplifiers of parallel connection type；
The compensation circuit of first inductance, second inductance and second capacitance composition is equivalent to fundamental wave and second harmonic
Shunt inductance.
2. a kind of E power-like amplifiers, which is characterized in that the E power-like amplifiers include compensation as described in claim 1
Circuit.
3. E power-like amplifiers as claimed in claim 2, which is characterized in that the E power-like amplifiers further include crystal
Pipe, output capacitance, drain electrode bias supply, gate bias supplies, input voltage, load resistance, series filtering capacitance and series connection
Filter inductance, the transistor include output capacitance, and the output capacitance is connected to the drain electrode of the transistor and the crystal
Between the source electrode of pipe；
The drain electrode of the transistor is connected with the first end of the series filtering inductance, the grid of the transistor and the input
The anode connection of voltage, the source electrode of the transistor and the first end of the load resistance and the cathode of the drain electrode bias supply
Connection, the cathode of the input voltage are connected with the anode of the gate bias supplies, the second end of the series filtering inductance
It is connected with the first end of the series filtering capacitance, the second end of the load resistance and the second end of the series filtering capacitance
Connection.
4. a kind of device parameters acquisition methods of the compensation circuit of E power-like amplifiers described in claim 1, feature exist
In, including：
Determine the design parameter of the E power-like amplifiers, the design parameter includes the theoretical institute of the E power-like amplifiers
Inductance value and capacitance coefficient are needed, the capacitance coefficient is the ratio of capacitance needed for extra capacitance and theory；
Calculate the parameter of first inductance, second inductance and second capacitance respectively using following formula：
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Wherein L1For the inductance value of first inductance, L2For the inductance value of second inductance, C2For the electricity of second capacitance
Capacitance, a are the first parameter, and b is the second parameter, and L is inductance value needed for the theory of the E power-like amplifiers,For the capacitance
Coefficient, ω0For the angular frequency of fundamental wave.
5. the device parameters acquisition methods of the compensation circuit of E power-like amplifiers as claimed in claim 4, which is characterized in that
Include before the parameter for calculating first inductance, second inductance and second capacitance respectively using formula：
Preset second parameter.
6. the device parameters acquisition methods of the compensation circuit of E power-like amplifiers as claimed in claim 5, which is characterized in that
The value of second parameter is more than 0.25 and less than 1.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510334523.4A CN104953966B (en) | 2015-06-16 | 2015-06-16 | A kind of compensation circuit of E power-like amplifiers and its device parameters acquisition methods |
| PCT/CN2015/095527 WO2016201893A1 (en) | 2015-06-16 | 2015-11-25 | Compensation circuit of e-class power amplifier and device parameter acquisition method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510334523.4A CN104953966B (en) | 2015-06-16 | 2015-06-16 | A kind of compensation circuit of E power-like amplifiers and its device parameters acquisition methods |
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| Publication Number | Publication Date |
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| CN104953966A CN104953966A (en) | 2015-09-30 |
| CN104953966B true CN104953966B (en) | 2018-05-18 |
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| CN201510334523.4A Expired - Fee Related CN104953966B (en) | 2015-06-16 | 2015-06-16 | A kind of compensation circuit of E power-like amplifiers and its device parameters acquisition methods |
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| CN (1) | CN104953966B (en) |
| WO (1) | WO2016201893A1 (en) |
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| CN107547050B (en) * | 2017-08-21 | 2020-12-15 | 天津大学 | Two-stage dual-band high-efficiency power amplifier |
| CN108923755B (en) * | 2018-06-12 | 2022-01-28 | 合肥工业大学 | Small direct current feed inductance class E power amplifier with voltage reduction load circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1479969A (en) * | 2000-10-10 | 2004-03-03 | ���������Ǽ���Э�� | Class E/F switching power amplifiers |
| US8054135B2 (en) * | 2008-12-05 | 2011-11-08 | General Electric Company | Class-E amplifier and lighting ballast using the amplifier |
| CN203086414U (en) * | 2012-12-18 | 2013-07-24 | 中国科学院微电子研究所 | Two frequency point micro-strip compensating circuit |
| CN204967766U (en) * | 2015-06-16 | 2016-01-13 | 深圳市华讯方舟微电子科技有限公司 | Compensating circuit and contain its E class power amplifier |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6570777B1 (en) * | 2001-12-06 | 2003-05-27 | Eni Technology, Inc. | Half sine wave resonant drive circuit |
| CN102684712B (en) * | 2012-04-25 | 2017-04-19 | 中国工程物理研究院电子工程研究所 | High-efficiency frequency modulation transmitter, circuit structure of power amplifier and design method |
| CN102868305A (en) * | 2012-09-13 | 2013-01-09 | 电子科技大学 | Envelope tracking power supply based on class-E DC (direct current)-DC converter |
-
2015
- 2015-06-16 CN CN201510334523.4A patent/CN104953966B/en not_active Expired - Fee Related
- 2015-11-25 WO PCT/CN2015/095527 patent/WO2016201893A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1479969A (en) * | 2000-10-10 | 2004-03-03 | ���������Ǽ���Э�� | Class E/F switching power amplifiers |
| US8054135B2 (en) * | 2008-12-05 | 2011-11-08 | General Electric Company | Class-E amplifier and lighting ballast using the amplifier |
| CN203086414U (en) * | 2012-12-18 | 2013-07-24 | 中国科学院微电子研究所 | Two frequency point micro-strip compensating circuit |
| CN204967766U (en) * | 2015-06-16 | 2016-01-13 | 深圳市华讯方舟微电子科技有限公司 | Compensating circuit and contain its E class power amplifier |
Non-Patent Citations (1)
| Title |
|---|
| An Extended Topology of Parallel-Circuit Class-E Power Amplifier to Account for Larger Output Capacitances;Jesus Cumana et al.;《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》;20111231;第59卷(第12期);第3178页、第3179页左栏、图8（b） * |
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| Publication number | Publication date |
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| WO2016201893A1 (en) | 2016-12-22 |
| CN104953966A (en) | 2015-09-30 |
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