CN109600118B - Harmonic injection theory suitable for class F high-efficiency power amplifier - Google Patents
Harmonic injection theory suitable for class F high-efficiency power amplifier Download PDFInfo
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
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- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
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- H—ELECTRICITY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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Abstract
The invention discloses a harmonic injection theory suitable for an F-class high-efficiency power amplifier, which comprises the steps of calculating parameters related to power levels for describing nonlinear characteristics of transistors and input grid voltage, calculating drain efficiency during secondary harmonic injection according to the parameters, calculating output power during secondary harmonic injection according to the ratio of the power during secondary harmonic injection to the power during non-harmonic injection, and establishing the relationship between the calculated drain efficiency output power during secondary harmonic injection and the obtained grid voltage waveform of an input end, the drain voltage waveform of an output end and the current waveform; and controlling the voltage waveform of the grid electrode at the input end of the transistor according to the relation so as to realize the control of the drain electrode efficiency and the output power of the transistor. The invention can realize fast calculation of the optimal injection waveform.
Description
Technical Field
The invention relates to the technical field of wireless communication power amplifiers, in particular to a harmonic injection theory suitable for a class-F high-efficiency power amplifier.
Background
With the rapid development of the new generation mobile communication system (5G), the rf transceiver as the core of the system is facing a new revolution and update. The indexes of high efficiency, high power, high gain and high linearity have become more and more the focus of attention. In the whole system of the rf transceiver, the rf power amplifier is the most power consuming module. The efficiency of the power amplifier directly determines the power consumption level of the entire transmitting terminal. If the work efficiency of the radio frequency power amplifier is improved, the power consumption of the whole system can be reduced, and therefore the performance requirement of a new generation communication system is met. The current high-efficiency power amplifiers mainly have two types: a switching class power amplifier (most typically a class E power amplifier) and a harmonic tuning class power amplifier (most typically a class F power amplifier).
The switch type power amplifier is characterized in that; high efficiency, simple structure and convenient realization. However, the carrier frequency is not high, and the peak voltage of the drain is high. The harmonic tuning power amplifier does not have the problems, so the harmonic tuning power amplifier becomes one of hot fields for power amplifier research. The traditional harmonic tuning power amplifier is characterized in that the voltage and the current of a drain electrode at the output end of a transistor are subjected to harmonic control, so that the waveforms of the transistor in a time domain are staggered, and the purpose of high efficiency is achieved. In recent years, a novel harmonic tuning power amplifier performs harmonic control research from the input end of a transistor, so that the purpose of improving the efficiency of the harmonic tuning power amplifier is achieved. In 2017, amirreza et al firstly studied the harmonic injection theory of J-class power amplifiers based on theory and simulation, and the obtained half-sine waveform injection can greatly improve the power and efficiency of the J-class power amplifiers.
Disclosure of Invention
The invention aims to provide a harmonic injection theory suitable for a class F high-efficiency power amplifier aiming at technical defects in the prior art, and the optimal injection waveform of the class F high-efficiency power amplifier can be calculated, so that the purpose of improving the power and efficiency of the class F high-efficiency power amplifier by performing harmonic injection from an input end is achieved.
The technical scheme adopted for realizing the purpose of the invention is as follows:
a harmonic injection theory suitable for a class F high efficiency power amplifier, comprising the steps of:
calculating and describing the power series a of the nonlinear characteristics of the transistor 0 -a 5 And two parameters m related to the input gate voltage 1 M2 according to the parameter m 1 ,m 2 Calculating the drain efficiency eta of the second harmonic injection F ，
According to the second harmonicPower at injection P' out With power P without harmonic injection out I.e. the injection power ratio P nor Calculating output power P 'of the second harmonic injection by the relational expression' out ，
calculated drain efficiency eta when establishing second harmonic injection F Output power P' out The relationship with the obtained voltage waveform of the grid electrode at the input end, the voltage waveform of the drain electrode at the output end and the current waveform;
and controlling the voltage waveform of the grid electrode at the input end of the transistor according to the relation so as to realize the control of the drain electrode efficiency and the output power of the transistor.
The parameter m 1 ,m 2 Shown below:
wherein V gs0 The dc term representing the gate input voltage.
The harmonic injection theory suitable for the F-class high-efficiency power amplifier can realize the rapid calculation of the optimal injection waveform, which shows that the improvement of the power and the efficiency of the F-class power amplifier can be realized by the harmonic injection at the input end, and the optimal injection waveform also lays a good foundation for the mutual cascade connection of the multi-stage F-class power amplifiers.
Drawings
FIG. 1 is a schematic diagram of a class F high efficiency power amplifier based on a field effect transistor model;
FIG. 2a parameter m when second harmonic is injected 1 ＝-06,m 2 In the case of =1.4, the injection power ratio P nor Followed by
And V gs2 /V gs1 A contour plot of the variation;
FIG. 2b parameter m when second harmonic is injected 1 ＝-06,m 2 In the case of =1.5, the injection power ratio P nor Followed by
And V gs2 /V gs1 A contour plot of the variation;
FIG. 2c parameter m when second harmonic is injected 1 ＝-06,m 2 In the case of =1.6, the injection power ratio P nor Followed by
And V gs2 /V gs1 A contour plot of the variation;
FIG. 2d parameter m when second harmonic is injected 1 ＝-06,m 2 Drain efficiency η =1.4 F Followed by
And V gs2 /V gs1 A contour plot of the variation;
FIG. 2e parameter m when second harmonic is injected 1 ＝-06,m 2 In the case of =1.5, drain efficiency η F Followed by
And V gs2 /V gs1 A contour plot of the variation;
FIG. 3a is an ADS simulation schematic diagram of a class F high-efficiency power amplifier during sine wave injection;
FIG. 3b is a schematic diagram of ADS simulation of a class F high efficiency power amplifier during second harmonic injection;
FIG. 4a is a gate voltage waveform of a class F high efficiency power amplifier at sine wave injection;
FIG. 4b is a gate voltage waveform for a class F high efficiency power amplifier at second harmonic injection;
FIG. 5a is a drain voltage waveform and a current waveform of a class F high efficiency power amplifier at sine wave injection;
fig. 5b is a drain voltage waveform and a current waveform of a class F high efficiency power amplifier at second harmonic injection.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The harmonic injection theory suitable for the class-F high-efficiency power amplifier is realized by the following steps:
in a conventional class-F high efficiency power amplifier (assuming the transistor used is a FET) the input voltage V is injected as a sine wave at the gate voltage at the input of the transistor gs The expression of (θ) is:
V gs (θ)＝V gs0 +V gs1 sin(θ) (1)
wherein V gs0 DC term, V, representing the gate input voltage gs1 Representing the fundamental amplitude of the gate input voltage.
Due to the non-linear effect of a transistor, its input voltage versus output current can be expressed in the form of a power series, i.e.:
wherein a is 0 -a 5 Coefficient representing a power series, i F (θ) represents the output current of the drain.
Therefore, substituting equation (1) into equation (2) results in the expression for the drain current in the case of a sinusoidal voltage waveform injection, namely:
i F (θ)＝I dc +i 1 (θ)+i 2 (θ)+i 3 (θ)+i 4 (θ)+i 5 (θ) (3)
as can be seen from the above equation, in the case of sinusoidal voltage waveform injection, the drain current generates a direct current term, a fundamental term, and a higher harmonic term. For the F-type efficient power amplifier, the impedance condition of odd harmonic is open circuit, so the third harmonic term i of drain current 3 (θ) should be zero at the impedance end face. Generated third harmonic drain current i 3 (θ) will leak out of the transistor to ground as shown in fig. 1.
If let the leakage drain third harmonic current be i 3 (θ), expressed as:
i 3 (θ)＝r 3 cos(3θ)+q 3 sin(3θ) (4)
wherein r is 3 And q is 3 The real and imaginary coefficients of their fourier expansions.
Then drain current at the impedance end face i' F (θ) should be:
i' F (θ)＝i F (θ)-i 3 (θ) (5)
drain current i 'at this time' F (θ) is free of third harmonic currents, so there is no third term in its Fourier expansion, i.e.:
from the above formula, r can be derived 3 And q is 3 The value of (c):
r 3 ＝0 (8)
similarly, the 5 th harmonic i 5 The real and imaginary coefficients of (θ) can also be obtained:
r 5 ＝0 (10)
meanwhile, the standard form of drain current for class F is:
wherein I max Represents the maximum current at the drain of the transistor and theta represents the phase angle.
Drain current i 'obtained from power series when no harmonic injection is performed' F (θ) should be equal to the drain current of the class F standard so as to satisfy the class F condition, i.e.:
when the grid voltage of the input end of the transistor has second harmonic injection, the input voltage V thereof gs The expression of (θ) is:
wherein V gs0 And V gs1 The dc term and the fundamental amplitude of the gate input voltage are still represented. V gs2 Representing the second harmonic amplitude of the gate input voltage.
Indicating the initial phase of the second harmonic of the gate input voltage relative to the fundamental.
In this case, the expression of the drain current at the time of second harmonic injection can be obtained by substituting expression (17) into expression (2)
Namely:
it can be seen that higher order harmonics are generated at the output due to the injection of the second harmonic at the input.
The standard form of the drain voltage of class F is:
V ds (θ)＝V dc +(V dc -V k )(1.2071 sin(θ)+0.2804 sin(3θ)+0.0733 sin(5θ)) (19)
wherein V dc Denotes the supply voltage of the drain, V k Representing the knee voltage of the transistor.
From the constant equation (13) - (16) of drain current when no harmonic is injected, the expression (18) of drain current after second harmonic injection, and the expression (19) of drain voltage of class F, the output power P 'at the time of second harmonic injection can be calculated' out Further, the power P 'at the time of second harmonic injection is calculated' out With power P without harmonic injection out I.e. the injection power ratio P nor ：
Wherein m is 1 ,m 2 Power series a representing and describing transistor non-linearity 0 -a 5 And two parameters related to the input gate voltage, which are expressed as (21), (22).
According to the constant equation (13) - (16) of the drain current when no harmonic is injected, the expression (18) of the drain current after the second harmonic injection, the expression (19) of the drain voltage of F type and m 1 ,m 2 The leak efficiency eta can also be calculated in the second harmonic injection by the expressions (21) and (22) F The expression of (c), namely:
for a particular FET transistor, a power series a describing the non-linear characteristics of the transistor can be fit 0 -a 5 Supply voltage V dc Voltage V at the knee point k It can be obtained that the input end is only connected with the second harmonic injection
And V gs2 /V gs1 Relative injection power ratio P nor Drain efficiency η F To find the optimal second harmonic injection amplitude V gs2 And an initial phase
As shown in FIGS. 2a to 2e, the injection power ratio P can be obtained from the equations (20) and (23) nor And drain efficiency η F At parameter m 1 ＝-06,m 2 In the case of =1.4,1.5,1.6, the value thereof follows
And V gs2 /V gs1 Contour plot of the changes. The following conclusions can be drawn from the figure:
for different parameters m 1 ,m 2 The maximum output power and drain efficiency can be obtained from
And V gs2 /V gs1 The solutions of (a) are obtained collectively. The maximum output power can be 1.2dB (P) higher than that without injection nor = 1.33). In addition, the maximum drain efficiency can reach 91.0%, which is significantly higher than the theoretical efficiency without implantation (82.77%). Therefore, when the input end has the optimal second harmonic injection, the performance of the input end is greatly improved.
For different parameters m 1 ,m 2 Optimum V gs2 /V gs1 Is different. Therefore, the value thereof depends on the characteristics of the transistor. Yet optimum phase
But are the same. That is to say that
Is a fixed value (3 pi/2) whose value does not vary with the transistor. This is a very useful conclusion and is a great help in selecting the second harmonic phase of class F power amplifiers with higher output power and efficiency.
The harmonic injection theory has the advantages that the optimal injection waveform of the F-type efficient power amplifier can be calculated, the optimal injection waveform is beneficial to improving the efficiency and the output power of the F-type efficient power amplifier, the application scenes and the application prospects of the F-type power amplifier are expanded, and the theoretical basis is laid for the mutual cascade of the multistage F-type efficient power amplifiers.
Next, according to the actual test of the above-mentioned technique,the optimal injection waveform of the F-type efficient power amplifier is calculated by actually applying the harmonic injection theory. The adopted transistor is GaN HEMT CGH60010D of Wolfspeed. The reason for selecting the transistor is that the transistor has strong nonlinearity, can provide harmonic waves required by the F-type power amplifier, has small package parasitic influence and can reflect the performance of the transistor to the maximum extent. The specific values of the relevant parameters of the transistor provided by the manufacturer are as follows: the standard drain voltage is 28V, the knee voltage is 2.4V, and the maximum current of the transistor drain is 1.74A. Therefore, the implementation selects 28V for the drain bias voltage and V for the gate bias voltage gs0 is-3.0V, the sinusoidal voltage amplitude V of the grid input gs1 It was 5.4V. The following can be obtained by (23) calculation: drain electrode efficiency eta F Maximum value of (A) is at V gs2 /V gs1 =0.2511, initial phase
To (3).
Fig. 3a is a schematic diagram of building an ADS simulation platform for a class F high efficiency power amplifier under the condition of not performing harmonic injection. Wherein the harmonic wave of the output end is controlled at 3 times to meet the impedance requirement of the F-type power amplifier. Fig. 3b is a schematic diagram of building an ADS simulation platform for a class F high efficiency power amplifier under the condition of second harmonic injection. Fig. 4a is a gate voltage waveform at the input without harmonic injection. Fig. 4b is the gate voltage waveform at the input in the case of second harmonic injection. Fig. 5a is a drain voltage waveform and a current waveform at an output terminal without harmonic injection. Fig. 5b is the drain voltage waveform and current waveform at the output under the condition of second harmonic injection, from which it can be seen that the drain waveforms at the time of injection and non-injection both conform to the time domain waveform diagram of the class F power amplifier.
TABLE 1
Table 1 shows the output power and drain efficiency of the theoretical calculation and simulation without harmonic injection and second harmonic injection. Through the comparison of the simulation result and the theoretical calculation result, the following conclusions can be found:
1. compared with the performance of an uninjected F-type power amplifier, under the condition of theoretically optimal waveform injection, the output power and the drain efficiency are respectively increased by 20.6 percent and 6.6 percent. Therefore, the method for injecting the second harmonic wave can be proved to really improve the overall performance of the F-type power amplifier, and further expand the application scene and the application prospect of the F-type efficient power amplifier.
2. The relative error between the simulation result of the output power and the drain efficiency and the theoretical calculation result is very small. For example, when the optimal waveform is injected, the relative errors of the simulation results of the output power and the drain efficiency and the theoretical calculation results are only 1.3% and 2.4%, respectively. Therefore, the correctness of the harmonic injection theory applicable to the F-type power amplifier can be verified.
3. Second harmonic phase of theoretical optimal waveform
Is 3 pi/2. This is consistent with the phase of the theoretical second harmonic expansion term of the half sine wave. Simultaneously optimizing the ratio V of the second harmonic amplitude to the fundamental amplitude of the waveform gs2 /V gs1 Is 0.25, which is close to the theoretical value of the half sine (0.42). Thus, the optimal injection waveform for class F can be approximately understood as a quasi-half sine wave, as shown in fig. 4 b. The conclusion also lays a foundation for the mutual cascade of the two-stage high-efficiency F-type power amplifier, namely, if the output end of the previous stage can provide a half-sine voltage waveform, the performance of the two-stage cascade is certain to be optimal.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, many modifications and adaptations can be made without departing from the principle of the present invention, and such modifications and adaptations should also be considered as the scope of the present invention.
Claims (2)
1. The harmonic injection method suitable for the F-type efficient power amplifier is characterized by comprising the following steps of:
calculating and describing power series a of transistor nonlinear characteristic 0 -a 5 And two parameters m related to the input gate voltage 1 ,m 2 According to the parameter m 1 ,m 2 Calculating the drain efficiency eta of the second harmonic injection F ，
According to output power P 'during secondary harmonic injection' out And the output power P when no harmonic wave is injected out I.e. the injection power ratio P nor Calculating output power P 'of the second harmonic injection by the relational expression' out ，
calculated drain efficiency eta when establishing second harmonic injection F Output power P' out， The relationship with the obtained voltage waveform of the grid electrode at the input end, the voltage waveform of the drain electrode at the output end and the current waveform;
and controlling the voltage waveform of the grid electrode at the input end of the transistor according to the relation so as to realize the control of the drain electrode efficiency and the output power of the transistor.
2. The method of harmonic injection for a class F high efficiency power amplifier as in claim 1, wherein said parameter m 1 ,m 2 Is represented as follows:
wherein V gs0 The dc term representing the gate input voltage.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5105167A (en) * | 1991-03-28 | 1992-04-14 | Honeywell Inc. | Harmonic injection amplifier |
| US5172072A (en) * | 1991-09-06 | 1992-12-15 | Itt Corporation | High efficiency harmonic injection power amplifier |
| CN107911088A (en) * | 2017-10-26 | 2018-04-13 | 天津大学 | For match circuit between the double-frequency broadband power-amplifier stage of GaN power devices |
| CN108712154A (en) * | 2018-05-22 | 2018-10-26 | 杭州电子科技大学 | A kind of broadband F power-like amplifiers and design method |
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2018
- 2018-11-16 CN CN201811365632.2A patent/CN109600118B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5105167A (en) * | 1991-03-28 | 1992-04-14 | Honeywell Inc. | Harmonic injection amplifier |
| US5172072A (en) * | 1991-09-06 | 1992-12-15 | Itt Corporation | High efficiency harmonic injection power amplifier |
| CN107911088A (en) * | 2017-10-26 | 2018-04-13 | 天津大学 | For match circuit between the double-frequency broadband power-amplifier stage of GaN power devices |
| CN108712154A (en) * | 2018-05-22 | 2018-10-26 | 杭州电子科技大学 | A kind of broadband F power-like amplifiers and design method |
Non-Patent Citations (2)
| Title |
|---|
| "Modeling and Design Methodology of High-Efficiency Class-F and Class-F-1 Power Amplifiers";Joon Hyung Kim,等;《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》;20110131;第59卷(第1期);全文 * |
| "基于GaN器件的连续型高效宽带功率放大器设计";李咏乐，等;《微波学报》;20141231;第30卷(第6期);全文 * |
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