CN109560151A - A method of obtaining complete nano-material - Google Patents
A method of obtaining complete nano-material Download PDFInfo
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- CN109560151A CN109560151A CN201811227848.2A CN201811227848A CN109560151A CN 109560151 A CN109560151 A CN 109560151A CN 201811227848 A CN201811227848 A CN 201811227848A CN 109560151 A CN109560151 A CN 109560151A
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 40
- 239000002253 acid Substances 0.000 claims abstract description 27
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 13
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000000717 retained effect Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 30
- 239000002070 nanowire Substances 0.000 claims description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 13
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000007605 air drying Methods 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 4
- 229960004756 ethanol Drugs 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 238000011010 flushing procedure Methods 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 239000006185 dispersion Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 6
- 238000010297 mechanical methods and process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 235000012149 noodles Nutrition 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention proposes a kind of method for obtaining complete 1D nano material, this method epitaxial growth Al first on the substrate of growth 1D nano materialxGa1‑xAs film, the group of Al are divided into 0.6≤x≤1, are then being prepared with AlxGa1‑x1D nano material is grown on the substrate of As film, after the completion of the growth of 1D nano material, the sample grown is corroded with HF acid and the complete 1D nano material of acquisition is cleaned multiple times.The present invention utilizes AlxGa1‑xAs film can react with HF acid and effectively be corroded, and GaAs, InAs nano-material do not react with HF acid and completely retained, by AlxGa1‑xAs film realizes that the method for obtaining complete 1D nano material, this method proposed by the present invention solve the problems, such as to obtain complete 1D nano material in the prior art as sacrificial layer, can effectively push application of the 1D nano material in terms of nano photoelectronic devices.
Description
Technical field
The invention belongs to field of new materials, a kind of complete semiconductor of acquisition in the sub- Material Field of nano photoelectric is particularly belonged to
The method of nano-material.
Background technique
Nano material is the hot spot of world today's research, at the same time, the growing technology of nano material relative maturity, institute
The nano material of growth can be used for preparing nano photoelectronic devices.Currently, the nano photoelectronic devices to have come out have nanometer laser
Device (such as quantum-well laser, quantum wire laser, quantum dot laser), quantum dot infrared photoelectric detector, InGaAs/GaAs
Multiple quantum wells Self Electro-optic Effect device (MQW-SEED), CMOS/SEED integrated opto-electronics device, AlGaAs/GaAs superlattices are more
Quantum Well infrared photoelectric detector array, vertical cavity surface emitting laser arrays (VCSEL), optically focused object light emitting diode, resonance
Infrared photography device (such as nanoscale silication platinum film Xiao that cavity-enhanced photodetector (RCE-PD), nano-level thin-membrane make
Special base potential barrier infrared focal plane array) etc..Therefore, nano photoelectronic devices have broad application prospects.1D nano material (is received
Rice noodles) it can be used for realizing 1D nano photoelectronic devices, the growing technology comparative maturity of 1D nano material, but high quality is high performance
1D nano photoelectronic devices, such as nano laser, nano photodetectors are with higher for complete 1D nano material
It is required that.Obtain relatively complete 1D nano material at this stage and mainly use Mechanical Method and ultrasonic method, both methods obtain not by
There are bigger difficulty for the complete 1D nano material destroyed, and hinder the application process of 1D nano photoelectronic devices.
To realize that complete 1D nano material, the prior art mainly use Mechanical Method and ultrasonic method.Mechanical Method obtains 1D and receives
Nanowire material is that in the substrate back-off to the Si substrate cleaned up that growth is had nano wire then surface is had to the lining of nano wire
Bottom peels, and nano wire is just pressed down on a si substrate, when dynamics is smaller, fracture fall nano wire in target substrate compared with
Few, when dynamics is excessive, nano wire is more it is likely that become fragment, therefore wanting to obtain ideal nano wire will be by multiple
Trial.Ultrasonic method prepares 1D nano wire, takes the test tube of a very little first, has the substrate of nano wire to be put into test tube growth
In, and instill a small amount of dehydrated alcohol in test tube, the substrate for having nano wire until just flooding surface, at the same take one it is clean
Suitable deionized water is added in quartzy small beaker, and the test tube equipped with nano wire sample is put into quartzy small beaker, is then placed in
Quartz beaker is taken out in Ultrasound Instrument, after ultrasonic 20min and takes out test tube with tweezers, takes a small amount of solution drop dry in cleaning from test tube
On net Si substrate, solution natural air drying on substrate is waited, finally observes ultrasonic stripping nano line on Si substrate under the microscope
The case where.Mechanical Method when being removed with the method for ultrasound with machinery method is adopted to be less able to obtain complete 1D nanometers of material
Material, and the method for ultrasound is more difficult for obtaining 1D nano material, limits the application of 1D nano photoelectric device.
For realize 1D nano material nano photoelectronic devices extensive use, when preparing this 1D nano material how
Acquisition high quality, complete 1D nano material, which become, primarily to be solved the problems, such as.For the prior art for obtaining complete 1D nanometers
The problem of material is relatively difficult, the 1D nano material poor quality of acquisition obtains complete 1D nanometers of material the invention proposes a kind of
The method of material, this method prepare particular semiconductor thin-film material on the substrate of growth 1D nano material first, are in substrate
The growth for carrying out nano material after semiconductor film material again is prepared, uses chemical attack after the completion of the growth of 1D nano material
Method obtains complete 1D nano material, and this method proposed by the present invention mode simple by process, easy to accomplish obtains
Complete 1D nano material, has effectively pushed application of the 1D nano material on device.
Summary of the invention
The present invention proposes that a kind of method for obtaining complete 1D nano material, this method are right before carrying out the growth of 1D nano material
Substrate for growing nano-material is handled, and this processing is in substrate surface epitaxial growth AlxGa1-xAs film material
Material, AlxGa1-xThe group of Al is divided into 0.6≤x≤1 in As, is then prepared with Al using surfacexGa1-xThe substrate of As thin-film material is opened
The preparation of beginning 1D nano material, 1D nano material are grown in AlxGa1-xOn As thin-film material surface.Using HF acid to AlxGa1-xAs
Thin-film material has corrosiveness, and HF acid does not have corrosiveness to GaAs, InAs material, can be by substrate surface
AlxGa1-xAs thin-film material is corroded as sacrificial layer with substrate of the HF acid to growth 1D nano material, substrate surface
AlxGa1-xAs thin-film material is reacted with HF acid effectively to be corroded, and GaAs, InAs nano-material do not react complete with HF acid
Reservation, the present invention by growth 1D nano material substrate on prepare AlxGa1-xAs thin-film material is as sacrificial layer, HF acid
With AlxGa1-xAs material is reacted without reacting with GaAs, InAs nano-material, realizes these 1D nano materials of GaAs, InAs
Completely retained, solution obtains problem existing for complete 1D nano material, this side proposed by the present invention in the prior art
Method is realized simply, and complete 1D nano material can be effectively obtained.
To achieve the above object, used technical solution is as follows:
A method of complete 1D nano material being obtained, this method passes through outside the substrate surface of growth 1D nano material
Prolong growth AlxGa1-xAs film, using HF acid to AlxGa1-xAs thin-film material has corrosiveness, and HF acid is to GaAs, InAs
Material does not have corrosiveness, makes to be grown in AlxGa1-x1D nano material on As film completely retains, and realizes and obtains complete 1D
The purpose of nano material.
A kind of above-mentioned method for obtaining complete 1D nano material, concrete methods of realizing are as follows:
Step 1: the cleaning of GaAs substrate is successively cleaned by ultrasonic 10 minutes with acetone, dehydrated alcohol, deionized water, is finally used
Deionized water is rinsed and is used and is dried with nitrogen；
Step 2: by AlxGa1-xAs film preparation is on cleaned substrate；
Step 3: 1D nano material is grown on step 2 treated substrate；
Step 4: by the sample HF acid corrosion of step 3 growth 1D nano material, corrosion process is until AlxGa1-xAs is thin
Film sacrificial layer by until corroding completely；
Step 5: taking out substrate after step 4 is corroded, and removes upper solution after standing, and adds deionization
Water dilution, then stand, upper solution is removed after standing, repeatedly repeatedly until 1D nano material cleans up and by 1D nanometers
Material is dispersed in dehydrated alcohol；
Step 6: the 1D nanomaterial solution for being dispersed in step 5 and cleaning up in dehydrated alcohol is taken to drip through over cleaning
Substrate on natural air drying, so far obtain complete 1D nano material；
Step 7: the pattern and state of the complete 1D nano material of acquisition are observed under an electron microscope.
Invention has the beneficial effects that: by being grown first on the substrate of growth 1D nano material in the present invention
AlxGa1-xAs film, then in AlxGa1-x1D nano material is grown on As film, with HF acid after 1D nano material is completed in growth
The sample grown is corroded, since HF acid is to AlxGa1-xAs film can corrode, to GaAs, InAs material without corruption
Erosion effect, to make the Al grown on substratexGa1-xAs film is corroded, and is grown in AlxGa1-xGaAs on As film,
This 1D nano material of InAs is not corroded and falls off from substrate, solves the difficulty for obtaining complete 1D nano material in the prior art
Topic, this method proposed by the present invention can effectively obtain complete 1D nano material, push 1D nano material in nano photoelectric
Application in terms of sub- device.
Detailed description of the invention
Fig. 1 is a kind of method schematic for obtaining complete 1D nano material proposed by the present invention.
Specific embodiment
A specific embodiment of the invention is described below with reference to embodiment, to better understand the present invention.
The present invention proposes that a kind of method for obtaining complete 1D nano material, this method are the substrates in growth 1D nano material
On prepare Al firstxGa1-xAs thin-film material, then with AlxGa1-x1D nano material is grown on the substrate of As thin-film material,
Grown sample is corroded with HF acid after the completion of the growth of 1D nano material, the Al of substrate surfacexGa1-xAs thin-film material with
The reaction of HF acid is effectively corroded, and GaAs, InAs nano-material are not reacted with HF acid completely to be retained, by solution
Nano wire sample clean repeatedly after, will be dripped containing the solution of 1D nanotube sample in the substrate surface natural air drying cleaned up,
Complete 1D nano material is obtained, solves the problems, such as effectively obtain complete 1D nano material in the prior art.
It is detailed to a kind of method progress for obtaining complete 1D nano material proposed by the present invention with reference to the accompanying drawings and examples
Thin description, substrate used is GaAs substrate in embodiment, and 1D nano-material is GaAs nano wire, and sacrificial layer material is
AlxGa1-xAs film, with a thickness of 5nm.
Fig. 1 is a kind of method schematic for obtaining complete 1D nano material proposed by the present invention, comprising: GaAs substrate 1,
AlxGa1-xAs film sacrificial layer material 2, GaAs nano-material 3.
The method for realizing the complete 1D nano material of a kind of acquisition that the present embodiment is proposed is as follows:
Step 1: substrate processing rapidly enters Sample Room (Load firstly, GaAs substrate is put on sample carrier
Lock), the vacuum degree environmental requirement of Sample Room is better than 10-8Substrate is carried out baking 2 hours, tentatively to substrate by Torr at 200 DEG C
Surface is handled；Then, it by the substrate of preliminary degassing process, is sent in Buffer by sample car, by substrate 400
DEG C, it toasts 2 hours, further removes the impurity of substrate surface absorption；
Step 2: AlxGa1-xThe preparation of As film sacrificial layer, AlxGa1-xAs film growth temperature is 450 DEG C, Ga source oven temperature degree
It is 1000 DEG C, corresponding Ga line equivalent pressure is 7 × 10-8Torr, As source oven temperature degree are 900 DEG C, and corresponding As line is equivalent
Pressure is 8 × 10-7Torr, Al source oven temperature degree are 1235 DEG C, and corresponding Al line equivalent pressure is 5.3 × 10-8Torr, growth
Time is 8s, obtained AlxGa1-xAs film thickness is about 5nm；
Step 3: GaAs nanowire growth, firstly, Ga drop deposits 26s at being 620 DEG C in depositing temperature, it is then intermediate
Pause 80s；GaAs nanowire growth temperature is 620 DEG C, and Ga source oven temperature degree is 995 DEG C, and corresponding Ga line equivalent pressure is 6.2
×10-8Torr, As source oven temperature degree are 600 DEG C, and corresponding As line equivalent pressure is 1.6 × 10-6Torr, As/Ga=25.8,
Growth time is 20min, the GaAs nano wire of acquisition；
Step 4: AlxGa1-xThe removal of As film sacrificial layer and the acquisition of complete GaAs nano wire: growth GaAs is received with HF
The sample of rice noodles is corroded (concentration proportioning HF:DI=1:10), by being cleaned multiple times GaAs nano wire point finally after corrosion
It is dispersed in dehydrated alcohol, natural air drying on Si substrate after cleaning will be dripped containing the ethanol solution of GaAs nano wire, obtained
Obtain complete GaAs nano-material.
A kind of the application method for obtaining complete 1D nano material claimed, this side are realized by above step
Method passes through the substrate surface epitaxial growth Al in growth 1D nano materialxGa1-xAs film, using HF acid to AlxGa1-xAs film
Material has corrosiveness, and HF acid does not have corrosiveness to GaAs, InAs material, makes to be grown in AlxGa1-xOn As film
GaAs or InAs nano-material completely retains, and realizes the purpose for obtaining complete 1D nano material, solves the prior art and is obtaining
Obtain the problem in terms of complete 1D nano material.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (5)
1. a kind of method for obtaining complete 1D nano material, comprising: GaAs substrate, AlxGa1-xAs film sacrificial layer material, GaAs
Nano-material, it is characterised in that: this method for obtaining complete 1D nano material is first on the substrate of growth 1D nano material
First prepare AlxGa1-xAs film, AlxGa1-xThe group of Al is divided into 0.6≤x≤1 in As, then has Al on surfacexGa1-xAs film
Substrate on grow 1D nano material, 1D nano material is grown in AlxGa1-xAs film surface, after the completion of the growth of 1D nano material
The sample grown HF acid is handled, using HF acid to AlxGa1-xAs film occurs chemical reaction and is corroded and dissolves, and
GaAs, InAs material will not completely be retained by HF acid corrosion, this 1D nano material of GaAs, InAs and GaAs substrate, then
GaAs substrate is taken out and removes HF acid corrosion liquid, the 1D nano material of dispersion is clean with deionized water repeated flushing, most
1D nano material is dispersed in dehydrated alcohol afterwards, and the ethanol solution containing 1D nano material is taken to drip in the Si lining cleaned up
Natural air drying on bottom obtains complete 1D nano material, realizes the complete 1D nano material of this acquisition proposed by the invention
Method.
2. a kind of method for obtaining complete 1D nano material according to claim 1, it is characterised in that: it is above-mentioned for realizing
The method for obtaining complete 1D nano material, concrete methods of realizing are as follows:
Step 1: substrate cleaning；
Step 2: by AlxGa1-xAs film preparation is on cleaned substrate；
Step 3: 1D nano material is grown on step 2 treated substrate；
Step 4: by the sample HF acid corrosion of step 3 growth 1D nano material, corrosion process is until AlxGa1-xAs film domestic animal
Layer by until etching completely；
Step 5: taking out substrate after step 4 is corroded, and removes upper solution after standing, and adds deionized water dilute
It releases, then stands, upper solution is removed after standing, repeatedly repeatedly until 1D nano material cleans up and by 1D nano material
It is dispersed in dehydrated alcohol；
Step 6: the 1D nanomaterial solution for being dispersed in step 5 and cleaning up in dehydrated alcohol is taken to drip in the lining through over cleaning
Natural air drying on bottom so far obtains complete 1D nano material；
Step 7: the pattern and state of the complete 1D nano material of acquisition are observed under an electron microscope.
3. a kind of method for obtaining complete 1D nano material according to claim 1, it is characterised in that: complete obtaining
Al is grown on the GaAs substrate for growing GaAs nano wire first when GaAs nano wirexGa1-xAs film, in AlxGa1-xAs
GaAs nano wire is grown on film, by AlxGa1-xAs film is as sacrificial layer material by HF acid dissolution, and GaAs nano wire is not by HF
Acid dissolution and completely retain and be dispersed in HF acid etching solution.
4. a kind of method for obtaining complete 1D nano material according to claim 1, it is characterised in that: be dispersed in HF sour
The GaAs nano-material lost in liquid is clean with deionized water repeated flushing, and GaAs nano wire is dispersed in dehydrated alcohol,
It takes ethanol solution drop in the Si substrate natural air drying cleaned up, obtains complete 1D nano material.
5. a kind of method for obtaining complete 1D nano material according to claim 1, it is characterised in that: described to be used as sacrifice
The Al of layerxGa1-xThe group of Al is divided into 0.6≤x≤1 in As thin-film material.
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| CN111073773A (en) * | 2019-12-24 | 2020-04-28 | 福建恒安集团有限公司 | Color-fixing clothing cleaning additive |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120058593A1 (en) * | 2008-08-29 | 2012-03-08 | National Taiwan University | Micro/nanostructure pn junction diode array thin-film solar cell and method for fabricating the same |
| CN103633123A (en) * | 2013-12-10 | 2014-03-12 | 中国科学院微电子研究所 | Nanowire substrate structure and method for manufacturing same |
| KR101455723B1 (en) * | 2013-04-24 | 2014-11-04 | 한국광기술원 | High efficiency Nanorod solar cell using reusing Si substrate and method for manufacturing the same |
| CN104752117A (en) * | 2015-03-03 | 2015-07-01 | 东华理工大学 | NEA electron source for vertically emitting AlGaAs/GaAs nanowires |
| CN106816360A (en) * | 2015-12-02 | 2017-06-09 | 台湾积体电路制造股份有限公司 | The method for forming nano wire |
| CN107749421A (en) * | 2017-09-30 | 2018-03-02 | 中国科学院微电子研究所 | Ring gate nano line transistor of vertical stacking and preparation method thereof |
-
2018
- 2018-10-22 CN CN201811227848.2A patent/CN109560151A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120058593A1 (en) * | 2008-08-29 | 2012-03-08 | National Taiwan University | Micro/nanostructure pn junction diode array thin-film solar cell and method for fabricating the same |
| KR101455723B1 (en) * | 2013-04-24 | 2014-11-04 | 한국광기술원 | High efficiency Nanorod solar cell using reusing Si substrate and method for manufacturing the same |
| CN103633123A (en) * | 2013-12-10 | 2014-03-12 | 中国科学院微电子研究所 | Nanowire substrate structure and method for manufacturing same |
| CN104752117A (en) * | 2015-03-03 | 2015-07-01 | 东华理工大学 | NEA electron source for vertically emitting AlGaAs/GaAs nanowires |
| CN106816360A (en) * | 2015-12-02 | 2017-06-09 | 台湾积体电路制造股份有限公司 | The method for forming nano wire |
| CN107749421A (en) * | 2017-09-30 | 2018-03-02 | 中国科学院微电子研究所 | Ring gate nano line transistor of vertical stacking and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| VIKRAM PASSI, ET AL.: "Design guidelines for releasing silicon nanowire arrays by liquid and vapor phase hydrofluoric acid", 《MICROELECTRONIC ENGINEERING》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111073773A (en) * | 2019-12-24 | 2020-04-28 | 福建恒安集团有限公司 | Color-fixing clothing cleaning additive |
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