TWI793783B - Supercritical fluids (scfs) treatment of porous silicon structure and method thereof - Google Patents

Abstract

A SCFs treatment method of porous silicon structures includes: etching a silicon substrate with an etching manner to form a porous-structured silicon substrate; further treating the porous-structured silicon substrate with a supercritical fluid to obtain a SCFs-treated porous silicon substrate; combining the SCFs-treated porous silicon substrate with at least one cell strain; and culturing the at least one cell strain on the SCFs-treated porous silicon substrate to obtain at least one cultured cell strain with enhancing a cell viability thereof.

Description

Treatment of Porous Silicon Structures Using Supercritical Fluids and Method

The present invention relates to a kind of processing (treatment) porous silicon (porous silicon) structure and its method using supercritical fluids (Supercritical fluids, SCFs); Fluid treatment of porous silicon structures and methods thereof; more particularly, a method for treating porous silicon structures with supercritical fluids that can improve cell viability.

For example, related porous materials are commonly used, such as the invention patent of "Porous Electroactive Material" in Patent Publication No. TW-I530006 of the Republic of China, which discloses a composition including silicon-containing electroactive porous particle fragments. The composition can be used to manufacture electrode materials, and the composition includes several porous particle fragments, and the porous particle fragments are obtained by crushing several silicon-containing porous particles.

Continuing from the above, the porous particle fragment of the aforementioned TW-I530006 is a porous particle fragment containing holes, and the porous particle fragment contains several holes, several cavities and several channels, and several The channels form networks and the pores, cavities and channels are separated and bounded by silicon-containing walls of the granular structure.

Continuing from the above, the porous particle fragments of the aforementioned TW-I530006 are fractals of substantially irregular shape or surface type, which are derived from the holes or holes in the porous particles originally defined or defined to derive the fractal shape net A network of silicon materials that does not itself include holes, channels, or a network of holes or channels.

Continuing from the above, the porous particle fragments of the aforementioned TW-I530006 are fractals with substantially irregular shape or surface morphology, which are derived from the random or regular network of originally defined linear, branched or layered elongated elements Silicon material in which one or more discrete or interconnected void spaces or channels are defined between elongated elements of the network.

However, the aforementioned patent announcement No. TW-I530006 only discloses fragments of the porous electroactive material and its silicon-containing porous particles, but it does not reveal how to treat the porous electroactive material and its silicon-containing porous particles Fragments, therefore there is necessarily a potential need for further processing of its structure, its method of operation and method of manufacture.

Another conventional modification application related to high-temperature superconductors, such as the invention patent of "High Temperature Superconductor (HTS) Thin Film and Its Modification or Production Method" Patent Publication No. TW-I542051 of the Republic of China, discloses a high-temperature superconductor thin film. The high temperature superconductor thin film contains a high temperature superconductor material having a crystal structure.

Continuing from the above, the high-temperature superconductor thin film of the aforementioned TW-I542051 includes a first layer and a second layer or a third layer, and the first layer includes a high-temperature superconductor material, and the second layer includes a modified material, and the modified material is bonded to the high temperature superconductor material, and the third layer includes a substrate material.

Continuing from the above, the operating characteristics of the high-temperature superconductor material of the aforementioned TW-I542051 is that the high-temperature superconductor material bonded to the modified material has improved operating characteristics, and the improved operating characteristics include a higher transition temperature, and The modifying material includes chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium or other materials.

However, the aforementioned patent announcement No. TW-I542051 only discloses the high-temperature superconductor thin film, its selected modified material and the modified high-temperature superconductor Conductor material, but it does not disclose how to modify the porous silicon material and the modified material, so there must be a potential demand for further providing the structure of the modified porous silicon material, its operation method and manufacturing method.

Another conventional application of related supercritical fluids, such as the invention patent of "Using Supercritical Fluid to Carry Out Epitaxy Thin Film Stripping Method, Its Stripping Film Transfer Method and Its Structure" No. Critical fluid for epitaxial thin film lift-off method. The epitaxial thin film peeling method using supercritical fluid includes the steps: first, a sacrificial layer and an epitaxial thin film are formed on a substrate, and the sacrificial layer is selected from aluminum arsenide, and the epitaxial thin film is selected from an arsenic gallium thin film or a silicon thin film.

Continuing from the above, the aforementioned TW-I606522 method for peeling epitaxial thin films using supercritical fluids further includes the following steps: then, mixing an etching solution with a supercritical fluid to form a supercritical fluid mixed etching solution, and the etching The solution is selected from hydrofluoric acid; then, the sacrificial layer is etched on the substrate using the supercritical fluid mixed etching solution, so as to peel off the epitaxial film from the substrate; then, when the sacrificial layer is etched, a peeling off the epitaxial film on the substrate.

Another conventional application of related supercritical fluids, for example: Republic of China Patent Publication No. TW-200526513 "Using Supercritical Fluid/Chemical Formula to Remove Micro-Electro-Mechanical System (MEMS) Sacrificial Layer" patent application, which discloses a Method of removing silicon-containing material from a substrate having silicon-containing material thereon, the method comprising an SCF-based composition comprising an SCF, at least one co-solvent, at least one etchant species, and at least one surface active agent, and can choose to include or not contain the surfactant according to different requirements.

Continuing from the above, the method of the aforementioned TW-200526513 contacts a substrate and an SCF-based composition under sufficient contact conditions for a sufficient time to remove a silicon-containing substance from the substrate, and the contact conditions can selecting a pressure comprised in the range from about 1400 to about 4400 psi, and The contact time can be selected to range from about 30 seconds to about 30 minutes, and the silicon-containing species can be selected to be a free silicon, a post-ash residue, and a post-etch residue.

As above, the SCF of the aforementioned TW-200526513 is selected from carbon dioxide, oxygen, argon, krypton, xenon or ammonia, and the co-solvent contains at least one C1-C6 alcohol, methanol or isopropanol, and the silicon-containing substance is selected from Free silicon oxide or silicon nitride, and the etchant species include ammonium difluoride or XeF ₂ , and the surfactant includes at least one nonionic or anionic surfactant.

Another conventional application of related supercritical fluids, for example: Patent Publication No. TW-201227802 of the Republic of China "Epitaxy structure with easy-to-remove sacrificial layer and its manufacturing method" patent application, which discloses an easily-removable sacrificial layer The manufacturing method of the epitaxial structure except the sacrificial layer includes: preparing a first substrate.

As mentioned above, the manufacturing method of the aforementioned TW-201227802 includes: forming a gallium oxide sacrificial layer on the first substrate, and the gallium oxide sacrificial layer satisfies GaO _x , wherein 0.5≦x≦3.5; Epitaxial growth on the layer forms an epitaxial structure layer. In addition, between the steps includes: patterning the gallium oxide sacrificial layer.

Based on the above, the manufacturing method of the aforementioned TW-201227802 includes: forming a second substrate on the epitaxial structure layer; passing through an etching solution to remove the gallium oxide sacrificial layer, so that the epitaxial structure layer and The first substrates are separated from each other.

Another conventional application of related supercritical fluids, for example: US Patent No. US-8071458 "Method for forming an interfacial passivation layer on the Ge semiconductor" invention patent, which discloses a method for forming a germanium semiconductor surface protection layer. The method for forming a germanium semiconductor surface protection layer comprises steps: firstly, performing an epitaxial process on a silicon wafer to form an epitaxial germanium semiconductor layer; then, forming a silicon dioxide layer on the epitaxial germanium semiconductor layer on, as a gate interposer electrical insulating film.

Continuing from the above, the method for forming a germanium semiconductor surface protective layer in the aforementioned US-8071458 further includes a step: then, passing a supercritical fluid to the interface between the silicon dioxide layer and the epitaxial germanium semiconductor layer, so that the interface is formed An interface protection layer; then, forming an aluminum film on the silicon dioxide layer to form an upper electrode of a metal oxide semiconductor capacitor, and forming the aluminum film on the epitaxial germanium semiconductor layer by the thermal evaporation method The bottom of the metal oxide semiconductor capacitor is used as the lower electrode.

As mentioned above, the aforementioned US-8071458 only uses the supercritical fluid to form the interface protection layer on the interface between the silicon dioxide layer and the epitaxial germanium semiconductor layer to protect the epitaxial germanium semiconductor layer. the surface. Apparently, the above-mentioned US-8071458 does not disclose how to use supercritical fluid to assist the etchant to assist in the stripping or transferring of the epitaxial film.

However, although the aforementioned Patent Publication No. TW-I606522 discloses a method for peeling epitaxial thin films using supercritical fluids, Patent Publication No. TW-200526513 discloses the use of supercritical fluid/chemical formulations to remove MEMS sacrificial layers, and Patent Publication No. TW-201227802 discloses an epitaxial structure with an easy-to-remove sacrificial layer and its manufacturing method, and US-8071458 discloses the application of various supercritical fluids to the method of forming a germanium semiconductor surface protection layer, but it does not disclose how to deal with porous Porous silicon materials and their processing materials, so there must be a potential demand for further providing processing porous silicon material structures, its operating methods and manufacturing methods.

Obviously, the aforementioned ROC Patent Announcement No. TW-I530006, Patent Announcement No. TW-I542051, Patent Announcement No. TW-I606522, Patent Publication No. TW-200526513, Patent Publication No. TW-201227802 and U.S. No. US-8071458 The No. patent and patent application are only for reference of the technical background of the present invention and to illustrate the current state of technological development, and are not intended to limit the scope of the present invention.

In view of this, in order to meet the above-mentioned technical problems and needs, the present invention provides a method for treating porous silicon structures with supercritical fluids, which etches a silicon substrate with an etching method to form a porous silicon structure. substrate, and subjecting the substrate with a porous silicon structure to supercritical fluid treatment with a supercritical fluid, so as to obtain a processed porous silicon substrate, and appropriately form several processed porous structures on the processed porous silicon substrate, and At least one cell strain can be selectively combined with several treated porous structures of the treated porous silicon substrate, and the cell strain is cultivated on the treated porous silicon substrate, so as to obtain a cultured cell strain, and improve [or Improve] its cell survival rate, so compared with the conventional porous silicon substrate, it can greatly improve its surface chemical activity, provide cell compatibility and cell survival rate.

The main purpose of the present invention is to provide a kind of processing porous silicon structure and its method by utilizing supercritical fluid, it etches with an etching method on a silicon substrate, so that form the substrate of a porous silicon structure, and this porous silicon structure The substrate is subjected to supercritical fluid treatment with a supercritical fluid, so as to obtain a processed porous silicon substrate, and several processed porous structures are appropriately formed on the processed porous silicon substrate, and at least one cell line can be selectively combined in Several treated porous structures of the treated porous silicon substrate, and the cell strain is cultivated on the treated porous silicon substrate, so as to obtain a cultured cell strain, and increase (or enhance) its cell survival rate, so as to achieve It can enhance its surface chemical activity, improve the purpose and effect of cytocompatibility and cell viability.

In order to achieve the above objectives, the processing of porous silicon structures using supercritical fluids in a preferred embodiment of the present invention includes:

a silicon substrate made of a silicon-containing material;

A substrate with a porous silicon structure, which is etched on the silicon substrate by an etching method to form the substrate with a porous silicon structure;

At least one supercritical fluid, which will have the substrate with porous silicon structure The supercritical fluid is subjected to supercritical fluid treatment in order to obtain a treated porous silicon substrate;

a plurality of treated porous structures formed on the treated porous silicon substrate; and

at least one cultured cell strain, which selectively binds at least one cell strain to several treated porous structures of the treated porous silicon substrate;

The cell strain is cultivated on the treated porous silicon substrate, so as to obtain a cultured cell strain and increase (or enhance) its cell survival rate.

The substrate with a porous silicon structure in a preferred embodiment of the present invention forms a micro-nano structure.

The supercritical fluid in a preferred embodiment of the present invention is selected from carbon dioxide supercritical fluid.

The processed porous silicon substrate of the preferred embodiment of the present invention has a silicon oxide carbide [SiOC].

The processed porous structure of the processed porous silicon substrate in a preferred embodiment of the present invention has several enlarged pore diameters.

In order to achieve the above purpose, the method of using supercritical fluid to treat porous silicon structure in a preferred embodiment of the present invention includes:

Etching by an etching method on a silicon substrate to form a substrate with a porous silicon structure;

Treating the substrate with the porous silicon structure with a supercritical fluid to obtain a processed porous silicon substrate, and appropriately forming several processed porous structures on the processed porous silicon substrate;

optionally binding at least one cell line to the treated porous structures of the treated porous silicon substrate; and

Cultivate the cell line on the treated porous silicon substrate, so as to obtain a cultured cell line, and improve (or enhance) its cell survival rate.

The supercritical fluid of the preferred embodiment of the present invention is selected from the group consisting of dioxygen Carburize supercritical fluid, and choose a pressure of about 3000psi or a temperature of about 150°C for processing operations.

The supercritical fluid addition of a preferred embodiment of the present invention incorporates a co-solvent.

The co-solvent of the preferred embodiment of the present invention is selected from water, acetone or any combination thereof.

The cell strain in a preferred embodiment of the present invention is selected from H9c2 cell strain or other cell strains.

1: Silicon substrate

10: Substrate with porous silicon structure

11: Processed porous silicon substrate

110: processed porous structure

2: Etching material

3: supercritical fluid

4: cell line

40: Cultured cell lines

a: enlarged aperture

Figure 1: A schematic block diagram of treating a porous silicon structure with a supercritical fluid according to a preferred embodiment of the present invention.

Fig. 2: A schematic flow chart of a method for treating a porous silicon structure using a supercritical fluid according to a preferred embodiment of the present invention.

Fig. 3: Schematic photographs of samples 1 to 6 viewed on scanning electron microscopes using supercritical fluids to process porous silicon structures in a preferred embodiment of the present invention.

Fig. 4: Schematic photographs of scanning electron microscope side-view images of samples 1 to 6 using supercritical fluid to process porous silicon structures in a preferred embodiment of the present invention.

Fig. 5: Schematic diagram comparing the atomic proportions of samples 1 to 6 after treating porous silicon structures with supercritical fluids in a preferred embodiment of the present invention.

Fig. 6: Schematic diagram comparing the measurement results of the water droplet contact angle after processing the porous silicon structure with supercritical fluid in the preferred embodiment of the present invention after the treatment of samples 1 to 6.

Fig. 7: Schematic diagram comparing surface pore sizes of samples 1 to 6 after treating porous silicon structures with supercritical fluids in a preferred embodiment of the present invention.

Figure 8: Another preferred embodiment of the present invention using supercritical fluid treatment Schematic diagram of porous silicon structure applied to biocompatibility.

Figure 9a: A schematic photo of an optical microscope image of a cell line cultured on a sample using a supercritical fluid to treat a porous silicon structure in another preferred embodiment of the present invention.

Fig. 9b: A schematic photo of an optical microscope fluorescent image of a cultured cell monomer obtained on a sample by using a supercritical fluid to treat a porous silicon structure in another preferred embodiment of the present invention.

Fig. 9c: Another preferred embodiment of the present invention is a schematic photo of an optical microscope fluorescence image of a cultured cell aggregate obtained on a sample by using a supercritical fluid to treat a porous silicon structure.

Fig. 9d: Another preferred embodiment of the present invention is a schematic photo of supercritical fluid treatment of a porous silicon structure on a sample to obtain an optical microscope superimposed fluorescent image of cultured cell monomers and aggregates.

In order to fully understand the present invention, preferred embodiments will be described below in detail together with the accompanying drawings, which are not intended to limit the present invention.

The preferred embodiment of the present invention utilizes supercritical fluids to increase the processing of porous silicon structures and methods thereof. Various supercritical fluids are used, for example: supercritical fluids such as carbon dioxide supercritical fluid or other possible substances can be selected [for example: oxygen, argon, krypton , xenon, ammonia or other supercritical fluids], but it is not intended to limit the scope of the present invention.

Continuing from the above, the use of supercritical fluid gain processing porous silicon structure and its method in the preferred embodiment of the present invention can be widely used in various industries, such as: optoelectronic industry [optoelectronic industry], micro-optical industry [micro-optical industry], energy Conversion industry (energy conversion industry), environmental monitoring industry (environment monitoring industry), microelectronics industry (microelectronic industry), semiconductor wafer industry (silicon wafer industry), micromachining industry (micromachining industry), biotechnology industry [biotechnical industry] or biomedical industry [biomedical industry], but it is not intended to limit the scope of application of the present invention.

Continuing from the above, the use of supercritical fluids in the preferred embodiments of the present invention to gain treatment of porous silicon structures and methods thereof can be appropriately selected for various biocompatible purposes and materials, and it can be appropriately selected for various human cells or animals Various possible applications of cells, but it is not intended to limit the scope of application of the present invention.

FIG. 1 shows a schematic diagram of a preferred embodiment of the present invention for treating porous silicon structures with supercritical fluids. Please refer to Figure 1, the preferred embodiment of the present invention uses supercritical fluid to process the porous silicon structure and is suitable for processing on a silicon substrate 1, and the silicon substrate 1 can be selected from a silicon-containing material or a similar component material Properly fabricated and properly cleaned (eg ultrasonically cleaned) the silicon substrate 1 prior to processing operations.

Please refer to Figure 1 again, for example, the silicon substrate 1 can be selected to have a predetermined dimension (for example: length, width and thickness), and the silicon substrate 1 can be selected to have a predetermined shape or a predetermined shape Substrate sheet (for example: rectangular sheet, square sheet, elliptical sheet, perfect circular sheet or other appropriate shape sheet).

FIG. 2 shows a schematic flow chart of a method for treating a porous silicon structure using a supercritical fluid according to a preferred embodiment of the present invention. Please refer to Figures 1 and 2. For example, the method for treating porous silicon structures with supercritical fluids according to a preferred embodiment of the present invention includes step S1: first, select at least An etching method, and an etching material 2 can be selected for proper etching (etching), so as to properly form a substrate 10 with a porous silicon structure (porous-structured), that is, form an etched silicon substrate.

Please refer to Figures 1 and 2 again. For example, according to various doping concentrations of the silicon substrate 1 or various etching conditions (for example: etching solution concentration, etching current or others), the porous silicon structure Substrate 10. You can choose to have various hole sizes, various hole types, and various porous layer thicknesses.

Please refer to Figures 1 and 2 again. For example, after the etching is completed, the substrate 10 with a porous silicon structure is properly cleaned (for example: alcohol rinsing), and the substrate 10 with a porous silicon structure is cleaned. Properly dry (for example: place in a vacuum ball for vacuum drying) for subsequent processing.

Please refer to Figures 1 and 2 again. For example, the method for treating a porous silicon structure with a supercritical fluid according to a preferred embodiment of the present invention includes step S2: Then, the substrate 10 with a porous silicon structure is prepared by appropriate technical means. A supercritical fluid treatment is performed with a supercritical fluid 3 to obtain a processed porous silicon substrate 11 , and several processed porous structures 110 are properly formed on the processed porous silicon substrate 11 .

Please refer to Figures 1 and 2 again. For example, the supercritical fluid 3 is selected from carbon dioxide supercritical fluid, and can be processed at a pressure of about 3000psi or other pressure values [for example: lower than 3000psi or higher than 3000psi] Operation, and can choose temperature about 150 ℃ or other temperature value [for example: be lower than 150 ℃ or be higher than 150 ℃] carry out processing operation for a predetermined time [for example: about 3 hours or other operation time].

Please refer to Figures 1 and 2 again. For example, the supercritical fluid 3 in another preferred embodiment of the present invention can optionally be added in conjunction with a co-solvent (co-solvent) to assist in processing operations, and the co-solvent The solvent is selected from water, acetone [Acetone] or any combination thereof, for example: the co-solvent is selected from water alone [for example: about 3ml], or the co-solvent can be selected from water [for example: about 3ml] and acetone [for example: About 3ml] combination, and get a variety of different treatment effects.

Please refer to Figures 1 and 2 again, for example, the processed porous structure 110 of the processed porous silicon substrate 11 has several enlarged pore diameters a, and through different co-solvents [for example: water, acetone or any group of Combination] Various treatment effects can be obtained on the treated porous structure 110 of the treated porous silicon substrate 11 .

Please refer to Figures 1 and 2 again. For example, the processed porous silicon substrate 11 and its processed porous structure 110 can be selected for various industrial applications, such as: optoelectronic industry, micro-optics industry, energy conversion industry, Environmental monitoring industry, microelectronics industry, semiconductor wafer industry, microprocessing industry, biotechnology industry, biomedical industry or related industries.

Please refer to Figures 1 and 2 again. For example, the supercritical fluid 3 can be selected from carbon dioxide supercritical fluid [scCO ₂ ] or other suitable supercritical fluids. In addition, the processed porous silicon substrate 11 and its processed porous structure 110 have a silicon oxide carbide [SiOC] or related compounds.

Please refer to Figures 1 and 2 again, for example, the processed porous silicon substrate 11 and its processed porous structure 110 can form a micro-nanostructure [microstructure], and the processed porous silicon substrate 11 and The treated porous structure 110 can change the chemical activity of its surface, and the micro-nano structure includes several nano-scale crystal pillars.

Fig. 3 discloses a schematic photograph of images viewed on a scanning electron microscope (SEM, Scanning Electron Microscope) of samples 1 to 6 for processing porous silicon structures with supercritical fluids according to a preferred embodiment of the present invention. FIG. 4 discloses schematic photographs of scanning electron microscope side-view images of samples 1 to 6 for treating porous silicon structures with supercritical fluids in a preferred embodiment of the present invention, which corresponds to FIG. 3 . Please refer to Figures 3 and 4, for example, the preferred embodiment of the present invention uses samples 1 to 6 with a thickness of about 4 μm.

Fig. 5 shows a comparison diagram of atomic proportions of samples 1 to 6 after treating porous silicon structures with supercritical fluids according to a preferred embodiment of the present invention. Please refer to Fig. 5, for example, the preferred embodiment of the present invention adopts samples 1 to 6 to obtain energy dispersive X-ray spectrum [EDS, Energy-dispersive X-ray spectroscopy] analysis results, which show that the composition ratio of samples 1 to 6 has changed.

Please refer to Figure 5 again. For example, compared to sample 1, the proportions of oxygen and carbon in samples 2 to 6 are all increased; The proportions of both increased, and the proportion of carbon content decreased, which shows that carbon dioxide supercritical fluid treatment may help to form silicon carbide with excellent biocompatibility.

Fig. 6 shows a comparative schematic diagram of the measurement results of water droplet contact angle after treatment of samples 1 to 6 by using supercritical fluid to treat the porous silicon structure according to the preferred embodiment of the present invention. Please refer to Figure 6, for example, the preferred embodiment of the present invention uses the contact angle measurement results obtained between the pure water drop and the upper surface of samples 1 to 6, and is used to determine whether to change its hydrophobicity or Hydrophilic.

Please refer to Figure 6 again. For example, the surface of the silicon substrate is more hydrophobic after etching, and only the surfaces of samples 3 and 4 have relatively better hydrophilicity after processing, and the surface of sample 3 The difference is particularly obvious, while the remaining samples have no obvious changes in their hydrophobicity or hydrophilicity before and after treatment.

Fig. 7 shows a comparative schematic diagram of the specific surface area (surface area per unit mass) of samples 1 to 6 after treatment of porous silicon structures with supercritical fluids in a preferred embodiment of the present invention. Please refer to FIG. 7 , for example, the preferred embodiment of the present invention uses the results of specific surface areas of samples 1 to 6 calculated by software.

Please refer to Figure 7 again. For example, the specific surface area of the silicon substrate increases after etching, and further increases significantly after treatment. Among them, the specific surface area of sample 5 is the highest, which shows that the treatment can make Its specific surface area is further increased.

Please refer to Fig. 7 again. For example, on comparative samples 4, 5 and 6, it shows that in carbon dioxide supercritical fluid treatment, a total of Appropriate addition of solvent can effectively increase the total specific surface area after treatment. Water, acetone or a combination thereof can be selected as a co-solvent to assist in increasing the specific surface area in supercritical fluid treatment.

FIG. 8 shows a schematic block diagram of another preferred embodiment of the present invention for treating porous silicon structures with supercritical fluids for biocompatibility. Please refer to Figures 1, 2 and 8, for example, the preferred embodiment of the present invention uses supercritical fluid to process porous silicon structures. The processed porous silicon substrate 11 and its processed porous structure 110 can be selectively applied to Uses for biocompatibility.

Please refer to Figures 1, 2 and 8 again. For example, another preferred embodiment of the present invention uses a supercritical fluid to treat porous silicon structures. The method includes step S11: then, at least one cell line is separated by appropriate technical means. 4. Several processed porous structures 110 combined with the processed porous silicon substrate 11 can be selected.

Please refer to Figures 1, 2 and 8 again. For example, another preferred embodiment of the present invention uses supercritical fluid to treat porous silicon structures. Cultivate the cell strain on several processed porous structures 110 of the silicon substrate 11, so as to obtain at least one cultured cell strain 40, and the cell strain 4 can be selected from H9c2 cell strain (a kind of rat cardiomyocyte) or other cell strains , and increase (or enhance) its cell viability.

Fig. 9a discloses a schematic photo (that is, a real photo) of an optical microscope (OM, Optical Microscope) image of another preferred embodiment of the present invention using a supercritical fluid to treat a porous silicon structure to culture a cell line on a sample. Please refer to Figures 1, 2, 8 and 9a, for example, a preferred embodiment of the present invention can choose to adopt a sample as the processed porous silicon substrate 11, and the cells of the cell line 4 on the sample can survive force.

Figure 9b discloses another preferred embodiment of the present invention using supercritical fluid to process porous silicon structures to obtain cultured cell monomers on samples Schematic photo of the fluorescence image of an optical microscope. Please refer to Figures 1, 2, 8 and 9b, for example, a preferred embodiment of the present invention can choose to use a DNA fluorescent stain [for example: JC-1 or other fluorescent stains] to stain the sample , and analyze the cell viability of the cell line 4 on the treated porous silicon substrate 11 by the overall absorbance after staining of the cells (for example: H9c2) monomer [monomer].

Fig. 9c discloses a schematic photo of another preferred embodiment of the present invention using a supercritical fluid to treat a porous silicon structure on a sample to obtain an optical microscope fluorescence image of a cultured cell aggregate. Please refer to Figures 1, 2, 8 and 9b. For example, in a preferred embodiment of the present invention, the cells on the treated porous silicon substrate 11 can be analyzed by the overall absorbance after staining with cell aggregates. Cell viability of strain 4.

Fig. 9d shows a schematic photo of another preferred embodiment of the present invention using a supercritical fluid to treat a porous silicon structure on a sample to obtain an optical microscope superimposed fluorescent image of cultured cell monomers and aggregates. Please refer to Figure 9d again. For example, the preferred embodiment of the present invention chooses the optical microscope overlay fluorescent image of the cell monomers and aggregates of the sample to show that the sample treated with carbon dioxide supercritical fluid has cell survival force.

Please refer to Figures 9a, 9b, 9c and 9d again. For example, the preferred embodiment of the present invention chooses to use the instrument for preliminary analysis. The result of the preliminary analysis shows that the cell viability of the sample treated with carbon dioxide supercritical fluid is greater than that treated with oxygen plasma. Therefore, it can be concluded that carbon dioxide supercritical fluid treatment has a tendency to improve the viability of H9c2 cells.

Please refer again to Figures 8, 9a, 9b, 9c and 9d. For example, the processing of porous silicon structures and methods thereof using supercritical fluids in preferred embodiments of the present invention, compared to untreated porous silicon structures, After the porous silicon structure is treated with supercritical fluid, it is obvious that it can increase the survival rate of cell lines in the porous silicon structure (that is, the trend of increasing the viability of H9c2 cells).

The above-mentioned preferred embodiments only illustrate the present invention and its technical characteristics, and the technology of this embodiment can still be implemented in various substantially equivalent modifications and/or replacements; therefore, the scope of rights of the present invention depends on the appended patent application The scope defined by the scope shall prevail. The copyright in this case is restricted to be used for patent applications in the Republic of China.

1: Silicon substrate

10: Substrate with porous silicon structure

11: Processed porous silicon substrate

110: processed porous structure

2: Etching material

3: supercritical fluid

a: enlarged aperture

Claims (10)

A porous silicon structure treated with a supercritical fluid, comprising: a silicon substrate made of a silicon-containing material; A substrate with a porous silicon structure, which is etched on the silicon substrate by an etching method to form the substrate with a porous silicon structure; At least one supercritical fluid, which performs supercritical fluid treatment on the substrate having a porous silicon structure with the supercritical fluid, so as to obtain a processed porous silicon substrate; a plurality of treated porous structures formed on the treated porous silicon substrate; and at least one cultured cell strain, which selectively binds at least one cell strain to several treated porous structures of the treated porous silicon substrate; Wherein the cell line is cultivated on the treated porous silicon substrate, so as to obtain a cultured cell line and improve its cell survival rate. According to claim 1 of the patent application, the supercritical fluid is used to process the porous silicon structure, wherein the substrate with the porous silicon structure forms a micro-nano structure. According to item 1 of the scope of the patent application, the supercritical fluid is used to treat the porous silicon structure, wherein the supercritical fluid is selected from carbon dioxide supercritical fluid. According to claim 1 of the patent application, the porous silicon structure is treated by supercritical fluid, wherein the processed porous silicon substrate has a silicon oxide carbide. According to the processing of porous silicon structure by supercritical fluid according to item 1 of the scope of application, the processed porous structure of the processed porous silicon substrate has several enlarged pore diameters. A method for treating a porous silicon structure using a supercritical fluid, comprising: Etching by an etching method on a silicon substrate to form a substrate with a porous silicon structure; Treating the substrate with the porous silicon structure with a supercritical fluid to obtain a processed porous silicon substrate, and appropriately forming several processed porous structures on the processed porous silicon substrate; A cell line can be selectively combined with several of the treated porous silicon substrates treated porous structures; and Cultivate the cell line on the treated porous silicon substrate, so as to obtain a cultured cell line and increase its cell survival rate. According to the method of treating porous silicon structure with supercritical fluid as described in item 6 of the scope of the patent application, wherein the supercritical fluid is selected from carbon dioxide supercritical fluid, and the processing operation is performed at a pressure of 3000 psi or a temperature of 150°C. The method for treating porous silicon structures with a supercritical fluid according to claim 6 of the patent application, wherein the supercritical fluid is added in combination with a co-solvent. According to the method of treating porous silicon structure with supercritical fluid as described in item 8 of the scope of the patent application, wherein the co-solvent is selected from water, acetone or any combination thereof. According to the method for treating porous silicon structures with supercritical fluid according to item 6 of the scope of the patent application, wherein the cell line is selected from H9c2 cell lines.

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