CN109554686B - Atmospheric pressure multilayer CVD reactor - Google Patents
Atmospheric pressure multilayer CVD reactor Download PDFInfo
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- CN109554686B CN109554686B CN201811511093.9A CN201811511093A CN109554686B CN 109554686 B CN109554686 B CN 109554686B CN 201811511093 A CN201811511093 A CN 201811511093A CN 109554686 B CN109554686 B CN 109554686B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a normal pressure multi-layer CVD reactor, which comprises a furnace body for placing plating pieces and carrying out gas phase reaction, wherein the furnace body is internally provided with an air inlet pipe and an air outlet pipe, the air inlet pipe is transversely placed left and right and is provided with a plurality of air inlet pipes along the up-down direction, a reaction layer for placing the plating pieces is formed between the upper and lower adjacent air inlet pipes, a group of air inlets facing the plating pieces are respectively arranged at the positions of the upper and lower air inlet pipes, the front and rear sides of the air inlet pipes are respectively provided with the air outlet pipes, the air outlet pipes are longitudinally arranged, a group of air outlets are respectively arranged at the positions of the air outlet pipes opposite to each reaction layer, a heating device for respectively heating each reaction layer is also arranged in the furnace body, and the normal pressure multi-layer CVD reactor further comprises a magnetic field generating device for being electrically connected with each plating piece and loading an electromagnetic field to the plating piece. The invention adopts layered ventilation, layered exhaust and layered temperature control to simultaneously carry out CVD reaction on a plurality of plating pieces, and has high production efficiency, simple structure and low manufacturing cost.
Description
[ field of technology ]
The invention relates to an atmospheric pressure multilayer CVD reactor.
[ background Art ]
CVD refers to a gas phase reaction at high temperature, a CVD reactor is a common electroless plating apparatus, and generally has two types, i.e., tubular type and flat type, and most of flat type large-area apparatuses are in a vacuum form, which has the disadvantages of low efficiency and high cost.
The present invention has been made based on this situation.
[ invention ]
The invention aims to overcome the defects of the prior art and provides the normal pressure multilayer CVD reactor with simple structure and high efficiency.
The invention is realized by the following technical scheme:
the utility model provides a normal pressure multilayer CVD reactor, is including being used for placing plating piece 10 and supplying plating piece 10 to carry out gaseous phase reaction's furnace body 1, be equipped with intake pipe 2 and blast pipe 3 in the furnace body 1, its characterized in that: the air inlet pipe 2 is transversely placed from side to side and is provided with a plurality of along the upper and lower direction, two upper and lower adjacent air inlet pipe 2 between form the reaction layer 4 that is used for placing plating member 10 to the position of relative plating member 10 on upper and lower air inlet pipe 2 is equipped with a set of air inlet 21 towards plating member 10 respectively, the front and back both sides of air inlet pipe 2 are equipped with blast pipe 3 respectively, blast pipe 3 vertically sets up, the position department that is relative with every reaction layer 4 on the blast pipe 3 is equipped with a set of gas vent 31 respectively, still be equipped with the heating device who is used for heating for every reaction layer 4 respectively in the furnace body 1, normal pressure multilayer CVD reactor still includes the magnetic field generating device who is used for being connected with every plating member 10 electricity and loading electromagnetic field to plating member 10.
An atmospheric pressure multilayer CVD reactor as described above, characterized by: each air inlet pipe 2 is provided with a plurality of groups of air inlets 21 corresponding to the plating pieces 10 respectively along the left-right direction, and the exhaust pipes 3 positioned on the front side and the rear side of the air inlet pipe 2 are respectively provided with a row, and each row of exhaust pipes 3 is provided with a plurality of exhaust pipes.
An atmospheric pressure multilayer CVD reactor as described above, characterized by: 4 exhaust pipes 3 are arranged around each plating member 10, wherein two exhaust pipes 3 are positioned in the front row, and the other two exhaust pipes 3 are positioned in the rear row.
An atmospheric pressure multilayer CVD reactor as described above, characterized by: the heating device comprises heating rods 5 electrically connected with an external temperature control system, the front side and the rear side of each air inlet pipe 2 are respectively provided with a heating rod 5, and the heating rods 5 are placed above or below the plating piece 10 in parallel with the air inlet pipes 2.
An atmospheric pressure multilayer CVD reactor as described above, characterized by: the air inlet pipe 2 is provided with n rows along the front-back direction, and the air outlet pipe 3 is provided with m rows along the front-back direction, wherein n and m are positive integers.
An atmospheric pressure multilayer CVD reactor as described above, characterized by: one end of the same row of air inlet pipes 2 is provided with an air supply main pipe 6 which is simultaneously communicated with each air inlet pipe 2 and is connected with external air supply equipment, and one end of the same row of air outlet pipes 3 is provided with an air outlet main pipe 7 which is simultaneously communicated with each air outlet pipe 3 and is connected with external air outlet equipment.
An atmospheric pressure multilayer CVD reactor as described above, characterized by: each group of the exhaust ports 31 has a plurality and is arranged uniformly around the axis of the exhaust pipe 3.
An atmospheric pressure multilayer CVD reactor as described above, characterized by: the exhaust port 31 is located at the middle position of the upper and lower adjacent two intake pipes 2.
An atmospheric pressure multilayer CVD reactor as described above, characterized by: each group of air inlets 21 is provided with three outwards-dispersed oblique plating pieces 10, and the three air inlets 21 are uniformly distributed at 120 degrees.
An atmospheric pressure multilayer CVD reactor as described above, characterized by: the included angle between the air inlet 21 and the horizontal plane is 45 degrees.
Compared with the prior art, the invention has the following advantages:
1. the invention adopts layered ventilation, layered exhaust and layered temperature control to simultaneously carry out CVD reaction on a plurality of plating pieces 10, has high production efficiency, can carry out the CVD reaction in a normal pressure mode, has simple structure and low manufacturing cost, and is easy to manufacture and popularize.
2. The invention adopts a plurality of air inlet pipes 2 which are transversely arranged left and right and are vertically arranged in a furnace body 1 to form a plurality of reaction layers 4, plating pieces 10 are arranged in each reaction layer 4, the air inlet pipes 2 are externally connected with air supply equipment, the upper air inlet pipe 2 between each reaction layer 4 is positioned at an air inlet 21 at the upper side of the plating piece 10 for air inlet, and the lower air inlet pipe 2 is positioned at an air inlet 21 at the lower side of the plating piece 10 for air inlet, so that layered air inlet is realized, the air inlet of each reaction layer 4 is fully uniform, and the air supply at the upper side and the lower side of the plating piece 10 is balanced; the heating device respectively heats each reaction layer 4 to perform layered temperature control, so that each reaction layer 4 is heated uniformly, and the reaction temperature of each plating piece 10 is good in consistency; and each plating piece 10 is loaded with an electromagnetic field through a magnetic field generating device so as to promote the growth of the catalyst and improve the efficiency; the gas enters the reaction layer 4 from the gas inlet 21, flows through the plating pieces 10 to react and then enters the exhaust pipe 3 from the opposite gas outlet 31 of each layer to be discharged, so that the mutual influence caused by the flow of the reacted gas to other reaction layers is reduced, the full contact of each plating piece 10 with the fresh gas entering from the gas inlet 21 is ensured, and the reaction speed and the product quality are improved.
[ description of the drawings ]
The invention is described in further detail below with reference to the attached drawing figures, wherein:
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic view of a combination structure of a single-row intake pipe and an associated exhaust pipe according to the present invention;
fig. 3 is a front view showing a combined structure of an intake pipe, an exhaust pipe and a heating rod of the present invention;
fig. 4 is a plan view showing a combined structure of an intake pipe, an exhaust pipe, a heating rod and a magnetic field generating device of the present invention.
[ detailed description ] of the invention
The invention is further described below with reference to the accompanying drawings:
the atmospheric pressure multi-layer CVD reactor as shown in figures 1 to 4 comprises a furnace body 1 for placing plating pieces 10 and allowing the plating pieces 10 to perform gas phase reaction inside, wherein the furnace body 1 is preferably of an atmospheric pressure box type structure, the temperature of the furnace body is 200-900 ℃, an air inlet pipe 2 and an air outlet pipe 3 are arranged in the furnace body 1, a plurality of air inlet pipes 2 are transversely placed left and right and are arranged in the vertical direction, reaction layers 4 for placing the plating pieces 10 are formed between two adjacent air inlet pipes 2, a group of air inlets 21 facing the plating pieces 10 are respectively arranged on the upper air inlet pipe 2 and the lower air inlet pipe 2 at positions opposite to the plating pieces 10, the air outlet pipes 3 are respectively arranged on the front side and the rear side of the air inlet pipe 2, a group of air outlets 31 are respectively arranged on the positions, opposite to each reaction layer 4, heating devices for respectively heating each reaction layer 4 are also arranged in the furnace body 1, and the atmospheric pressure multi-layer CVD reactor further comprises a magnetic field generating device for electrically connecting each plating piece 10 and loading an electromagnetic field to the plating pieces 10.
The air inlet pipes 2 are transversely arranged left and right and are vertically arranged in the furnace body 1 to form a plurality of reaction layers 4, a plating piece 10 is arranged in each reaction layer 4, the furnace body 1 comprises a supporting structure for placing the plating piece 10, the supporting structure is of an existing structure and can be a clamping groove or a hook, and the like, the air inlet pipes 2 are externally connected with air supply equipment, such as a natural gas hot wire decomposing furnace 11, natural gas enters the air inlet pipes 2 after passing through the natural gas hot wire decomposing furnace 11, the upper air inlet pipe 2 between each reaction layer 4 is positioned at an air inlet 21 on the upper side of the plating piece 10 for air inlet, and the lower air inlet pipe 2 is positioned at an air inlet 21 on the lower side of the plating piece 10 for air inlet, so that layered air inlet is realized, the air inlet of each reaction layer 4 is fully uniform, and air inlet on the upper side and the lower side of the plating piece 10 is balanced; the heating device respectively heats each reaction layer 4 to perform layered temperature control, so that each reaction layer 4 is heated uniformly, and the reaction temperature of each plating piece 10 is good in consistency; and each plating piece 10 is loaded with an electromagnetic field through a magnetic field generating device so as to promote the growth of the catalyst and improve the efficiency; the gas enters the reaction layer 4 from the gas inlet 21, flows through the plating pieces 10 to react and then enters the exhaust pipe 3 from the opposite gas outlet 31 of each layer to be discharged, so that the mutual influence caused by the flow of the reacted gas to other reaction layers is reduced, the full contact of each plating piece 10 with the fresh gas entering from the gas inlet 21 is ensured, and the reaction speed and the product quality are improved.
The CVD reactor adopts layered ventilation, layered exhaust and layered temperature control to carry out CVD reaction on a plurality of plating pieces 10 at the same time, has high production efficiency, can carry out CVD reaction in a normal pressure mode, and has simple structure, low manufacturing cost and easy equipment manufacture.
The CVD reactor can be used for coating large and small workpieces, single and double-sided materials, when one-sided materials are coated, one surface of the two workpieces, which is not required to be coated, is abutted, and the surface of the workpiece, which is required to be coated, faces outwards to form a coated part 10, and the coated part 10 is placed in a reaction layer 4 for CVD reaction.
Preferably, the gas is a non-corrosive gas, the gas inlet pipe 2 is a stainless steel pipe, and the gas outlet pipe 3 is a quartz glass pipe.
Preferably, each reaction layer 4 can be transversely arranged to place a plurality of plating articles 10, and each air inlet pipe 2 is provided with a plurality of groups of air inlets 21 respectively corresponding to the plurality of plating articles 10 along the left-right direction, exhaust pipes 3 positioned at the front side and the rear side of the air inlet pipe 2 are respectively provided with a row, and each row of exhaust pipes 3 is provided with a plurality of exhaust pipes to form a single-row multi-row reaction structure, so that the number of pieces produced at one time is increased, and the production efficiency is improved.
Preferably, 4 exhaust pipes 3 are arranged around each plating member 10, wherein two exhaust pipes 3 are arranged in the front row, and the other two exhaust pipes 3 are arranged in the rear row, so that the air inlet and exhaust systems around each plating member 10 are relatively balanced, and further, the exhaust ports 31 are arranged in the middle position of the upper and lower adjacent two air inlet pipes 2, so that the air inlet and exhaust systems on the upper and lower sides of the plating member 10 are balanced, and the coating film uniformity on the upper and lower sides of the plating member 10 is ensured.
To facilitate the entry of gases into the exhaust pipe 3 in various orientations, each set of said exhaust ports 31 has a plurality and is arranged uniformly about the axis of the exhaust pipe 3.
In order to make the gas enter from the air inlets 21 and lean against the plating piece 10 horizontally, each group of air inlets 21 has three outward-dispersed oblique plating pieces 10, the three air inlets 21 are uniformly distributed at 120 degrees, and air is sprayed to the surface of the plating piece 10 through the air inlets 21 at three different directions, so that the surface of the whole plating piece 10 is in more uniform contact with the gas, and the consistency of the plating film on the surface of the plating piece 10 is improved.
Preferably, the air inlet 21 forms an angle of 45 degrees with the horizontal plane.
The heating device comprises heating rods 5 electrically connected with an external temperature control system, each heating rod 5 is arranged on the front side and the rear side of each air inlet pipe 2, each heating rod 5 is placed above or below a plating piece 10 in parallel to the air inlet pipe 2, each reaction layer 4 is provided with an upper layer and a lower layer, the heating rods 5 in front and rear rows are used for carrying out temperature control heating, the plating pieces 10 are located between the upper layer and the lower layer, a relatively balanced reaction area of the plating pieces 10 can be covered, and the temperature control consistency and the heating rate of the reaction area of the plating pieces 10 are improved. The heating rods 5 of each row can be of a whole structure and transversely span above or below the plating piece 10, or can be of a plurality of structures in a segmented mode for controlling the temperature respectively.
As shown in fig. 4, the magnetic field generating device includes a cable 9 for electrically connecting the plating member 10 with the electromagnetic field generator 8, and the plating member 10 is loaded with an electromagnetic field by the electromagnetic field generator 8. Or by means of a cable 9, which is electrically connected to an external alternating current, not indicated in the figures, by means of which the plating 10 is subjected to an electromagnetic field.
One end of the air inlet pipe 2 in the same row is provided with an air supply main pipe 6 which is simultaneously communicated with each air inlet pipe 2 and connected with external air supply equipment, and one end of the air outlet pipe 3 in the same row is provided with an air outlet main pipe 7 which is simultaneously communicated with each air outlet pipe 3 and connected with external air outlet equipment, so that the structure is simple.
Preferably, the air inlet pipe 2 is provided with n rows along the front-back direction, the air outlet pipe 3 is provided with m rows along the front-back direction, wherein n and m are positive integers, so that a reaction structure with multiple layers up and down, multiple rows front and back and multiple rows left and right is formed, and the production reaction of a plurality of plating pieces 10 can be carried out at one time. As shown in the embodiment of fig. 3 and 4, the air inlet pipe 2 has two rows, the air outlet pipe 3 has three rows, and the heating rod 5 has four rows and six layers, forming six layers and two rows and three rows of CVD reactors.
The invention has simple structure, high production efficiency, low cost and easy manufacture, popularization and use.
Claims (8)
1. The utility model provides a normal pressure multilayer CVD reactor, is including being used for placing plating piece (10) and supplying plating piece (10) to carry out furnace body (1) of gas phase reaction including, be equipped with intake pipe (2) and blast pipe (3) in furnace body (1), its characterized in that: the air inlet pipe (2) is transversely placed left and right and is provided with a plurality of reaction layers (4) for placing plating pieces (10) along the up-down direction, a plurality of air inlets (21) which are towards the plating pieces (10) are respectively arranged at positions of the upper air inlet pipe (2) and the lower air inlet pipe (2) opposite to the plating pieces (10), the front side and the rear side of the air inlet pipe (2) are respectively provided with an exhaust pipe (3), the exhaust pipes (3) are longitudinally arranged, the positions of the exhaust pipes (3) opposite to each reaction layer (4) are respectively provided with a plurality of exhaust ports (31), a heating device for respectively heating each reaction layer (4) is further arranged in the furnace body (1), the atmospheric pressure multi-layer CVD reactor further comprises a magnetic field generating device which is electrically connected with each plating piece (10) and loads an electromagnetic field to the plating piece (10), a plurality of groups of air inlets (21) which respectively correspond to the plurality of plating pieces (10) are respectively arranged on each air inlet pipe (2) along the left-right direction, one exhaust pipe (3) is respectively arranged at the front side and the rear side of the air inlet pipe (3), the exhaust pipes (3) are respectively provided with two exhaust pipes (3) which are respectively arranged at the front side and the rear side of the exhaust pipe (3), the exhaust pipes (3) are respectively arranged at the front side and the rear side of each exhaust pipe (3, the exhaust pipe (3) are arranged at the front side and the two exhaust pipes (3), each group of air inlets (21) is provided with three inclined plating pieces (10) which are scattered outwards.
2. An atmospheric multilayer CVD reactor according to claim 1, wherein: the heating device comprises heating rods (5) electrically connected with an external temperature control system, the front side and the rear side of each air inlet pipe (2) are respectively provided with a heating rod (5), and the heating rods (5) are parallel to the air inlet pipes (2) and are arranged above or below the plating pieces (10).
3. An atmospheric multilayer CVD reactor according to claim 1, wherein: the air inlet pipe (2) is provided with n rows along the front-back direction, and the air outlet pipe (3) is provided with m rows along the front-back direction, wherein n and m are positive integers.
4. An atmospheric multilayer CVD reactor according to claim 1, wherein: one end of the same row of air inlet pipes (2) is provided with an air supply main pipe (6) which is simultaneously communicated with each air inlet pipe (2) and is connected with external air supply equipment, and one end of the same row of exhaust pipes (3) is provided with an exhaust main pipe (7) which is simultaneously communicated with each exhaust pipe (3) and is connected with the external air exhaust equipment.
5. An atmospheric multilayer CVD reactor according to claim 1, wherein: each group of exhaust ports (31) has a plurality of exhaust ports and is uniformly arranged around the axis of the exhaust pipe (3).
6. An atmospheric multilayer CVD reactor according to claim 1, wherein: the exhaust port (31) is positioned at the middle position of the upper and lower adjacent two air inlet pipes (2).
7. An atmospheric multilayer CVD reactor according to claim 1, wherein: the three air inlets (21) are uniformly distributed at 120 degrees with respect to each other.
8. An atmospheric multilayer CVD reactor according to claim 7 wherein: the included angle between the air inlet (21) and the horizontal plane is 45 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811511093.9A CN109554686B (en) | 2018-12-11 | 2018-12-11 | Atmospheric pressure multilayer CVD reactor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811511093.9A CN109554686B (en) | 2018-12-11 | 2018-12-11 | Atmospheric pressure multilayer CVD reactor |
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| CN109554686A CN109554686A (en) | 2019-04-02 |
| CN109554686B true CN109554686B (en) | 2023-09-22 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007158358A (en) * | 2006-12-27 | 2007-06-21 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| CN102165099A (en) * | 2008-07-23 | 2011-08-24 | 爱恩邦德(瑞士奥尔顿)有限公司 | Chemical vapor deposition reactor for depositing layers made of a reaction gas mixture onto workpieces |
| CN202347096U (en) * | 2011-09-19 | 2012-07-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Vapor deposition equipment |
| KR20170010583A (en) * | 2015-07-20 | 2017-02-01 | 주식회사 유진테크 | Apparatus for processing substrate |
| CN209307484U (en) * | 2018-12-11 | 2019-08-27 | 广东双虹新材料科技有限公司 | A kind of normal pressure multi-layer vapor reacting furnace |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8438990B2 (en) * | 2008-09-30 | 2013-05-14 | Applied Materials, Inc. | Multi-electrode PECVD source |
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2018
- 2018-12-11 CN CN201811511093.9A patent/CN109554686B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007158358A (en) * | 2006-12-27 | 2007-06-21 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| CN102165099A (en) * | 2008-07-23 | 2011-08-24 | 爱恩邦德(瑞士奥尔顿)有限公司 | Chemical vapor deposition reactor for depositing layers made of a reaction gas mixture onto workpieces |
| CN202347096U (en) * | 2011-09-19 | 2012-07-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Vapor deposition equipment |
| KR20170010583A (en) * | 2015-07-20 | 2017-02-01 | 주식회사 유진테크 | Apparatus for processing substrate |
| CN209307484U (en) * | 2018-12-11 | 2019-08-27 | 广东双虹新材料科技有限公司 | A kind of normal pressure multi-layer vapor reacting furnace |
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