CN109524543A - A kind of three-dimensional stacked phase transition storage and preparation method thereof - Google Patents
A kind of three-dimensional stacked phase transition storage and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of three-dimensional stacked phase transition storages and preparation method thereof, and wherein preparation method specifically prepares first level electrode each other with spacing on substrate；The first strip phase change layer that center has gap is prepared between first level electrode spacing；The first gate tube is prepared between the gap of the first strip phase change layer；Prepare the first insulating layer；Same vertical position on the first insulating layer prepares the second horizontal electrode；Then the second strip phase change layer is prepared；Then the second gate tube is prepared；Then, the insulated hole of horizontal direction is prepared between horizontal electrode spacing；The phase transition storage that the multiple-level stack of vertical structure is formed after vertical electrode is prepared between adjacent insulated hole.The present invention passes through the overall flow technological design to its crucial preparation method, shape setting of each detailed structure etc. improves, it can effectively solve the problem that the problems such as three-dimensional stacked phase change memory device multiple-level stack step present in technique preparation is complicated, and technique realizes that difficulty is big and unit size is miniature.
Description
Technical field
The invention belongs to microelectronic component and memory technology fields, deposit more particularly, to a kind of three-dimensional stacked phase transformation
Reservoir and preparation method thereof.
Background technique
Develop into the novel memory devices of one of following mainstream memory as most probable, phase transition storage is big in order to adapt to
Demand of the data age to high-capacity storage forms the three-dimensional phase transition storage of multiple-level stack gradually to Three-dimensional Development.
It is simple vertical that phase transition storage three-dimensional stacked at present is all based on the progress of horizontal electrode crosspoint array structure
It stacks upwards, although structure is simple, with the increase of stacking number, processing step is cumbersome, and uneven surface phenomenon is aggravated,
Bring integrity problem；In addition, the characteristic size limited size of storage unit is in advanced photoetching process, it is with high costs.It is comprehensive
For conjunction, it is unfavorable for further multiple-level stack and High Density Integration.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the purpose of the present invention is to provide a kind of three-dimensional stacked phase transformations
Memory and preparation method thereof, wherein by the overall flow technological design to its crucial preparation method, each detailed structure
Shape setting etc. improves, and can effectively solve the problem that three-dimensional stacked phase change memory device in technique preparation compared with prior art
Existing multiple-level stack step is complicated, and the technique problem that realize that difficulty is big and unit size is miniature equal, the present invention is using vertically
Electrode structure establishes three-dimensional phase change memory array, and the size of phase change cells characteristic size is determined by film thickness (for example, phase change layer
Thickness can down to 2nm, break through photoetching process limitation), the three-dimensional stacked phase transition storage phase change cells therein of formation are located at
The space overlapping region of horizontal electrode and vertical electrode, preparation process can effectively simplify.
To achieve the above object, according to one aspect of the present invention, a kind of system of three-dimensional stacked phase transition storage is provided
Preparation Method, which is characterized in that include the following steps:
(1) prepare on substrate N item be parallel to a direction and each other with spacing first level electrode；Wherein,
N is positive integer that is preset and being more than or equal to 2；
(2) between filling center has centainly in the spacing corresponding region of each adjacent two electrode of the first level electrode
First strip phase change layer of gap；
(3) the filling gating tube material in the central space of the first strip phase change layer, forms the first gate tube；
(4) continue to prepare the first insulating layer being made of insulating materials over the substrate, cover first insulating layer
The first level electrode, the first strip phase change layer and first gate tube；The first level electrode has part area
Domain is uncovered, and the region that this partial denudation goes out is used to form first level electrode pin；
(5) the second horizontal electrode is prepared on the first insulating layer, and second horizontal electrode has and described first
The identical spacing distribution of horizontal electrode, also, the projection of second horizontal electrode on the first insulating layer is complete
It is covered by the projection of the first level electrode on the first insulating layer；
(6) between filling center has centainly in the spacing corresponding region of each adjacent two electrode of second horizontal electrode
Second strip phase change layer of gap, the second strip phase change layer have between the identical center of the first strip phase change layer
Gap distribution, also, the projection of the second strip phase change layer on the first insulating layer is completely by the first strip phase transformation
The projection of layer on the first insulating layer is covered；
(7) the filling gating tube material in the central space of the second strip phase change layer, forms the second gate tube；
(8) continue to prepare the second insulating layer being made of insulating materials over the substrate, cover the second insulating layer
Second horizontal electrode, the second strip phase change layer and second gate tube；Second horizontal electrode has part area
Domain is uncovered, and the region that this partial denudation goes out is used to form the second horizontal electrode pin；
(9) for being located at the top insulating layer of top layer, in the top insulating layer and projection and top layer horizontal electrode are each
Prepare (N-1) × M insulating layer array through-hole, the insulating layer battle array in the corresponding position in spacing corresponding region of adjacent two electrode
Its width of any one through-hole in column through-hole is greater than the spacing of corresponding adjacent two electrode, and these insulating layer arrays
Go directly substrate for the bottom surface of through-hole；Wherein, M is positive integer that is preset and being more than or equal to 2；
(10) fill insulant in the insulating layer array through-hole, the electric heating isolation in horizontal direction；
(11) for projecting the corresponding insulation in the spacing corresponding region of adjacent with same top layer's horizontal electrode two electrode
Layer array through-hole, it is logical to prepare vertical electrode array between two adjacent insulating layer array through-holes of these insulating layer array through-holes
Hole, go directly substrate for the bottom surface of these vertical electrode array through-holes；
(12) electrode material is filled in the vertical electrode array through-hole and prepare vertical electrode, to form multiple-level stack
Phase transition storage.
As present invention further optimization, after the completion of the step (8), before the step (9) starts, further include according to
Secondary repeating said steps (4) to the step (8) several times with formed multiple-layer horizontal electrode, strip phase change layer, gate tube and absolutely
The step of edge layer.
As present invention further optimization, in the step (11), the total number of the vertical electrode array through-hole is
(N-1) × (M-1) is a.
As present invention further optimization, in the step (2), for the arbitrary neighborhood two of the first level electrode
There is the width of the first strip phase change layer of certain interval to be greater than adjacent two electrode in the first level electrode for electrode, the center
0~4um of spacing.
Arbitrary neighborhood as present invention further optimization, in the step (3), corresponding to the first level electrode
Two electrodes, the width of first gate tube are greater than 0~4um of central space width of the first strip phase change layer.
As present invention further optimization, in the step (1), the line width of the first level electrode is 2 μm~30 μ
M, spacing are 8 μm~60 μm.
As present invention further optimization, in the step (2), for the arbitrary neighborhood two of the first level electrode
There is the width of the first strip phase change layer of certain interval to be greater than adjacent two electrode in the first level electrode for electrode, the center
0~2um of spacing, it is preferred that the outer edge of the first strip phase change layer is located on first level electrode.
Arbitrary neighborhood as present invention further optimization, in the step (3), corresponding to the first level electrode
Two electrodes, the width of first gate tube are greater than 0~2um of central space width of the first strip phase change layer, it is preferred that
The edge of first gate tube is located on the first strip phase change layer.
As present invention further optimization, in the step (1), the first level electrode with spacing each other is
With same equidistant first level electrode；
In the step (2), for first strip phase change layer of the center with certain interval that filling obtains, any two
The first strip phase change layer their line width with certain interval filled in adjacent two electrode spacing corresponding region it is identical and in
Entreat the width in gap also identical.
It is another aspect of this invention to provide that the present invention provides the three-dimensional stacked phases being prepared using above-mentioned preparation method
Transition storage.
Contemplated above technical scheme through the invention, compared with prior art, existing 3D XPoint memory master
Will use plane three-dimensional stack manner, lower electrode (wordline), insulating layer, gating layer, phase change memory, top electrode (bit line) etc. by
Layer deposition repeats above-mentioned steps and realizes multiple-level stack, and this method can continue to use the preparation method of original plane phase change memory, select
Siphunculus and phase-change storage material can be realized by simple successive sedimentation to be integrated, but the number of its photoetching and the three-dimensional stacked number of plies
Directly proportional, because the increase of lithographic process brings the sharply promotion of cost when multiple-level stack, and the preparation of each layer of electrode is drawn
Play certain surface irregularity degree, when multiple-level stack will bring serious device reliability issues.Although part information (such as
The master thesis " 3D XPoint memory Study on Preparation " of this seminar) though in refer to " the 3D based on vertical electrode
XPoint memory ", but a simple electrode structure schematic diagram is provided only, each layer of implement body is stored without 3D XPoint
Structure design and process implementation, do not account for gate tube necessary to practical 3D XPoint device more, and of the invention
The design for each layer size being related to, the realization of alignment and the effective integration of gate tube and storage unit are exactly that vertical three-dimensional stacks
Compared to where the difficult point of mode stacked horizontally.Three-dimensional stacked phase change memory unit structure and its preparation side in the present invention
Method, compared to the structure that existing 3D Xpoint structure is all based on horizontal electrode, present invention employs vertical electrode structure,
All bit lines are formed by the way that the through-hole deposition after etching is primary, are substantially reduced photoetching number when multiple-level stack, are effectively reduced
Cost；Almost contour in each functional material face in preparation process, excess stock can be removed by etching, and multilayer heap is effectively relieved
Folded bring surface irregularity problem；Further it is proposed that the characteristic size of storage unit determined by film thickness, rather than
Technique line width, this aspect are conducive to improve storage density, establish the three-dimensional memory array of large capacity, on the other hand, can reduce phase
Become area size (can be down to 2nm), is conducive to reduce operation electric current, reduces power consumption.
To sum up, the present invention uses the intersection construction of horizontal electrode and vertical electrode, can be realized the multilayer in vertical direction
It stacks, the characteristic size of phase change cells is small, and surface is relatively flat, is conducive to the stacking of more layers；Be conducive to reduction unit phase transformation
Operation electric current, reduce power consumption.
Detailed description of the invention
Fig. 1 (a1) to Fig. 1 (a17) is the preparation process of three level stack in the three-dimensional stacked phase transition storage embodiment of the present invention
Process is in the diagrammatic cross-section vertical with horizontal electrode direction；
Wherein, Fig. 1 (a1) is the schematic diagram of selected substrate；
Fig. 1 (a2) is the schematic diagram for preparing first level electrode on the surface of a substrate；
Fig. 1 (a3) is the signal for preparing center between first level electrode spacing and having the first strip phase change layer in gap
Figure；
Fig. 1 (a4) is the schematic diagram that filling gating material forms the first gate tube in the first strip phase transformation lamellar spacing；
Fig. 1 (a5) is the schematic diagram that the first insulating layer is prepared in understructure；
Fig. 1 (a6) is the schematic diagram of the second horizontal electrode of side's preparation on the first insulating layer；
Fig. 1 (a7) is that showing for second strip phase change layer of the center with identical gap is prepared between the second horizontal electrode spacing
It is intended to；
Fig. 1 (a8) is the schematic diagram that filling gating material forms the second gate tube in the second strip phase change layer gap；
Fig. 1 (a9) is the schematic diagram that second insulating layer is prepared in understructure；
Fig. 1 (a10) is the schematic diagram of side's preparation third horizontal electrode over the second dielectric；
Fig. 1 (a11) is the third strip phase change layer for preparing center between third horizontal electrode spacing and having identical gap
Schematic diagram；
Fig. 1 (a12) is the schematic diagram that filling gating material forms third gate tube in third strip phase change layer gap；
Fig. 1 (a13) is the schematic diagram that third insulating layer is prepared in understructure；
Fig. 1 (a14) is to prepare the schematic diagram of horizontal direction insulating layer array through-hole on above structure；
Fig. 1 (a15) is the schematic diagram that fill insulant forms vertical isolation layer in insulating layer array through-hole；
Fig. 1 (a16) is to prepare the schematic diagram of vertical electrode array through-hole on above structure；
Fig. 1 (a17) is the schematic diagram filled electrode material in vertical electrode array through-hole and form vertical electrode.
Fig. 2 (b1) to Fig. 2 (b17) is the preparation process of three level stack in the three-dimensional stacked phase transition storage embodiment of the present invention
Process top view illustration；
Wherein, process shown in Fig. 2 (b1)~Fig. 2 (b17) schematic diagram is corresponding with shown in Fig. 1 (a1)~Fig. 1 (a17).
Fig. 3 is the diagrammatic cross-section that multi-layer three-dimension of the present invention stacks phase transition storage.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
For summary, first level electrode with identical spacing of the N item along a direction is prepared on substrate；First
The first strip phase change layer that center has gap is prepared between horizontal electrode spacing；Is prepared between the gap of the first strip phase change layer
One gate tube；On above structure, the first insulating layer is prepared；Same vertical position on the first insulating layer prepares N direction
The second horizontal electrode identical with spacing；The second strip phase transformation that center has gap is prepared between the second horizontal electrode spacing
Layer；The second gate tube is prepared between the gap of the second strip phase change layer；On above structure, second insulating layer is prepared；Similarly
Method stack third layer, the 4th layer ...；Then, the insulated hole of horizontal direction is prepared between horizontal electrode spacing；Adjacent exhausted
The phase transition storage that the multiple-level stack of vertical structure is formed after vertical electrode is prepared between marginal pore.
As shown in Fig. 1 (a1) to Fig. 1 (a17), the preparation method of three-dimensional stacked phase transition storage in the present invention specifically can be with
The following steps are included:
(1) N item is prepared on substrate along a certain having with equidistant first level electrode to direction；
Wherein, N can accommodate the maximum value of first level electrode number less than substrate in the direction；In order to mention as far as possible
The storage density of high memory, N can take big value as far as possible in value range.
(2) identical center is filled in each adjacent two strip electrode gap of first level electrode has the of certain interval
One strip phase change layer；
Wherein, the first strip phase change layer have gap every phase change layer width be greater than first level electrode gap 0~
4um。
(3) the filling gating tube material in the central space of each two neighbouring phase-change materials；
(4) the first insulating layer is prepared on above structure, understructure is completely covered in insulating materials, and exposes the first water
Flat electrodes pin；
(5) position identical with first level electrode on the first insulating layer prepares in addition to length is slightly shorter, other are with the
Identical second horizontal electrode of one horizontal mean pole；
(6) in each adjacent two strip electrode gap of the second horizontal electrode, in position identical with the first strip phase change layer
Upper filling is in addition to length is slightly shorter, other the second strip phase change layers identical with the first strip phase change layer；
(7) the filling gating tube material in the central space of each two neighbouring phase-change materials；
(8) second insulating layer is prepared on above structure, understructure is completely covered in insulating materials, and exposes the second water
Flat electrodes pin；
(9) stacking of more layers then repeats the above steps；
(10) N-1*M width is prepared in the interstitial site of horizontal electrode to lead to slightly larger than the insulating layer array of electrode spacing
Hole, via bottoms are substrate surface；
Wherein, M be less than along horizontal electrode direction institute energy housing insulation layer number of through-holes maximum value；In order to mention as far as possible
The storage density of high memory, M can take big value as far as possible in value range.
(11) fill insulant in insulating layer array through-hole, the electric heating isolation in horizontal direction；
(12) N-1*M-1 vertical electrode array through-hole, through-hole are prepared between the adjacent through-holes of insulating layer array through-hole
Bottom is substrate surface；
(13) electrode material is filled in array through-hole obtain vertical electrode.
Phase change cells are located at the space overlapping region of horizontal electrode and vertical electrode.Each layer horizontal electrode, except length is with layer
Number increases and successively decreases outside, and number, direction and line width are all the same.
By taking step (2) form the first strip phase change layer as an example, every phase change layer width be greater than first level electrode gap 0~
4um can guarantee that phase change layer can contact under overlay error with electrode；Second strip phase change layer similar can also be configured.
In step (10), insulating layer array through-hole is for fill insulant, thus by phase transformation and gating material in horizontal electrode side
It is divided into different zones upwards, is to guarantee to separate slightly larger than electrode spacing.In addition in the present invention, the length of every layer of horizontal electrode
Degree successively successively decreases, and can form the structure of staircase-type, exposure lower electrode.
In addition, above-mentioned first level electrode is other than same spaced set, it can also be by the way of non-equally spacing
To be configured (certain second horizontal electrode, third horizontal electrode etc. are also similar)；The first strip phase with certain interval
Change layer is other than width identical, central space using line width also identical set-up mode, and line width can not be identical, central space
Width can not also be identical (certain second strip phase change layer, third strip phase change layer etc. are also similar)；As long as different vertical
Their length change of gradient can (such as the second horizontal electrode be in the first water of ratio in electrode direction to horizontal electrode in height
Flat electrodes want short), guarantee that the pin of each layer horizontal electrode can expose.Secondly, central space is selected to fill
Siphunculus material, width are greater than vertical electrode side length.
The following are specific embodiments:
Embodiment 1
The present embodiment proposes a kind of three-dimensional stacked phase transition storage and preparation method thereof by taking two layers of stacked memory as an example
Specific embodiment, comprising the following steps:
Step 1: on a monocrystaline silicon substrate, by photoetching process obtain several line widths along a direction be 10 μm between
Away from for 15 μm of first level electrode patterns, 100nmTiW alloy electrode material is precipitated on the substrate after photoetching, by removing work
After skill, the first level electrode of corresponding litho pattern is obtained, as shown in Fig. 1 (a1)~Fig. 1 (a2) and Fig. 2 (b1)~Fig. 2 (b2).
Step 2: on the basis of step 1, photoetching center has the first strip phase transformation layer pattern in gap, line width 17
μm, gap is 10 μm, and spacing is 8 μm, which covers the spacing of first level electrode, and 1 μm of edge is on horizontal electrode, so
Precipitation material 100nm GST afterwards.After stripping technology, the tool of the first strip shaped electric poles of covering of corresponding litho pattern is obtained
There is the first phase change layer of array through-hole, as shown in Fig. 1 (a3) and Fig. 2 (b3).
Step 3: on the basis of step 2, photoetching and choosing is filled in the central space of each two neighbouring phase-change materials
Siphunculus material, line width are 12 μm, and 1 μm of edge forms the first gate tube, such as Fig. 1 (a4) and Fig. 2 (b4) on the first phase change layer
It is shown.
Step 4: on the basis of step 3, photoetching simultaneously deposits 100nmSiO2Understructure is completely covered in insulating materials,
And first level electrode pin is exposed, the first insulating layer is obtained, as shown in Fig. 1 (a5) and Fig. 2 (b5).
Step 5: on the first insulating layer, other second water identical with first level mean pole in addition to length is slightly shorter are prepared
Flat electrodes, as shown in Fig. 1 (a6) and Fig. 2 (b6).
Step 6: on the basis of step 5, photoetching center has the second strip phase change layer figure in gap, line width 17
μm, gap is 10 μm, and spacing is 8 μm, which covers the spacing of the second horizontal electrode, and 1 μm of edge is on horizontal electrode, so
Precipitation material 100nm GST afterwards.After stripping technology, the tool of the second strip shaped electric poles of covering of corresponding litho pattern is obtained
There is the second phase change layer of array through-hole, as shown in Fig. 1 (a3) and Fig. 2 (b3), as shown in Fig. 1 (a7) and Fig. 2 (b7).
Step 7: on the basis of step 6, photoetching and choosing is filled in the central space of each two neighbouring phase-change materials
Siphunculus material, line width are 12 μm, and 1 μm of edge forms the second gate tube, such as Fig. 1 (a8) and Fig. 2 (b8) on the second phase change layer
It is shown.
Step 8: on the basis of step 7, photoetching simultaneously deposits 100nmSiO2Understructure is completely covered in insulating materials,
And the second horizontal electrode pin is exposed, second insulating layer is obtained, as shown in Fig. 1 (a9) and Fig. 2 (b9).
Step 9: the stacking of more layers then repeats the above steps, such as Fig. 1 (a10)-Fig. 1 (a13) and Fig. 2 (b10)-Fig. 2
(b13) shown in
Step 10: the insulating layer battle array that N-1*M width is slightly larger than electrode spacing is prepared in the interstitial site of horizontal electrode
Column through-hole, via bottoms are substrate surface, and width is 17 μm, are spaced 6 μm；And fill insulant is isolated for horizontal electric heating,
As shown in Fig. 1 (a14)-Fig. 1 (a15) and Fig. 2 (b14)-Fig. 2 (b15).
Step 11: N-1*M-1 vertical electrode array square through hole, through-hole are prepared in the interstitial site of horizontal electrode
Bottom is substrate surface, and side length is 8 μm；And electrode material is filled, vertical electrode is prepared, such as Fig. 1 (a16)-Fig. 1 (a17)
With shown in Fig. 2 (b16)-Fig. 2 (b17).
N, M in the present invention can be positive integers pre-set, more than or equal to 2, the line width of each structure, interval,
The specific size of central space etc. can be adjusted flexibly as needed.
Gating tube material in the present invention, can be using materials known in the art such as GeSe.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of preparation method of three-dimensional stacked phase transition storage, which is characterized in that include the following steps:
(1) prepare on substrate N item be parallel to a direction and each other with spacing first level electrode；Wherein, N is
Positive integer that is preset and being more than or equal to 2；
(2) center is filled in the spacing corresponding region of each adjacent two electrode of the first level electrode has certain interval
First strip phase change layer；
(3) the filling gating tube material in the central space of the first strip phase change layer, forms the first gate tube；
(4) continue to prepare the first insulating layer being made of insulating materials over the substrate, make described in first insulating layer covering
First level electrode, the first strip phase change layer and first gate tube；The first level electrode has partial region not
Capped, the region that this partial denudation goes out is used to form first level electrode pin；
(5) the second horizontal electrode is prepared on the first insulating layer, and second horizontal electrode has and the first level
The identical spacing distribution of electrode, also, the projection of second horizontal electrode on the first insulating layer is completely by institute
The projection of first level electrode on the first insulating layer is stated to be covered；
(6) center is filled in the spacing corresponding region of each adjacent two electrode of second horizontal electrode has certain interval
Second strip phase change layer, the second strip phase change layer have and the identical central space of the first strip phase change layer point
Cloth, also, the projection of the second strip phase change layer on the first insulating layer is existed by the first strip phase change layer completely
Projection on first insulating layer is covered；
(7) the filling gating tube material in the central space of the second strip phase change layer, forms the second gate tube；
(8) continue to prepare the second insulating layer being made of insulating materials over the substrate, make described in second insulating layer covering
Second horizontal electrode, the second strip phase change layer and second gate tube；Second horizontal electrode has partial region not
Capped, the region that this partial denudation goes out is used to form the second horizontal electrode pin；
(9) for being located at the top insulating layer of top layer, in the top insulating layer and projection and top layer horizontal electrode are each adjacent
(N-1) × M insulating layer array through-hole is prepared in the corresponding position in spacing corresponding region of two electrodes, and the insulating layer array is logical
Its width of any one through-hole in hole is greater than the spacing of corresponding adjacent two electrode, and these insulating layer array through-holes
Bottom surface go directly substrate；Wherein, M is positive integer that is preset and being more than or equal to 2；
(10) fill insulant in the insulating layer array through-hole, the electric heating isolation in horizontal direction；
(11) for projecting the corresponding insulating layer battle array in the spacing corresponding region of adjacent with same top layer's horizontal electrode two electrode
Column through-hole prepares vertical electrode array through-hole between two adjacent insulating layer array through-holes of these insulating layer array through-holes, this
Go directly substrate for the bottom surface of a little vertical electrode array through-holes；
(12) electrode material is filled in the vertical electrode array through-hole and prepare vertical electrode, to form the phase of multiple-level stack
Transition storage.
2. the preparation method of three-dimensional stacked phase transition storage as described in claim 1, which is characterized in that complete in the step (8)
It further include being repeated in the step (4) to the step (8) several times to form multilayer before Cheng Hou, the step (9) start
The step of horizontal electrode, strip phase change layer, gate tube and insulating layer.
3. the preparation method of three-dimensional stacked phase transition storage as described in claim 1, which is characterized in that in the step (11),
The total number of the vertical electrode array through-hole is that (N-1) × (M-1) is a.
4. the preparation method of three-dimensional stacked phase transition storage as described in claim 1, which is characterized in that right in the step (2)
In two electrode of arbitrary neighborhood of the first level electrode, the center has the width of the first strip phase change layer of certain interval
Greater than 0~4um of spacing of adjacent two electrode in the first level electrode.
5. the preparation method of three-dimensional stacked phase transition storage as described in claim 1, which is characterized in that right in the step (3)
The width of two electrode of arbitrary neighborhood of first level electrode described in Ying Yu, first gate tube is greater than the first strip phase transformation
0~4um of central space width of layer.
6. the preparation method of three-dimensional stacked phase transition storage as described in claim 1, which is characterized in that in the step (1), institute
The line width for stating first level electrode is 2 μm~30 μm, and spacing is 8 μm~60 μm.
7. the preparation method of three-dimensional stacked phase transition storage as claimed in claim 4, which is characterized in that right in the step (2)
In two electrode of arbitrary neighborhood of the first level electrode, the center has the width of the first strip phase change layer of certain interval
Greater than 0~2um of spacing of adjacent two electrode in the first level electrode, it is preferred that the outer edge position of the first strip phase change layer
In on first level electrode.
8. the preparation method of three-dimensional stacked phase transition storage as claimed in claim 5, which is characterized in that right in the step (3)
The width of two electrode of arbitrary neighborhood of first level electrode described in Ying Yu, first gate tube is greater than the first strip phase transformation
0~2um of central space width of layer, it is preferred that the edge of first gate tube is located on the first strip phase change layer.
9. the preparation method of three-dimensional stacked phase transition storage as described in claim 1, which is characterized in that in the step (1), institute
Stating the first level electrode with spacing each other is with same equidistant first level electrode；
In the step (2), for first strip phase change layer of the center with certain interval that filling obtains, any two are adjacent
Between the first strip phase change layer their line width with certain interval filled in two electrode spacing corresponding regions is identical and center
The width of gap is also identical.
10. the three-dimensional stacked phase transition storage being prepared using the preparation method as described in claim 1-9 any one.
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| CN110707209A (en) * | 2019-09-03 | 2020-01-17 | 华中科技大学 | Three-dimensional stacked phase change memory and preparation method thereof |
| CN111969106A (en) * | 2020-08-17 | 2020-11-20 | 长江存储科技有限责任公司 | Phase change memory device and method of manufacturing the same |
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