CN109524364B - 具有堆叠管芯的封装式集成电路和其方法 - Google Patents

具有堆叠管芯的封装式集成电路和其方法 Download PDF

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Publication number
CN109524364B
CN109524364B CN201710847527.1A CN201710847527A CN109524364B CN 109524364 B CN109524364 B CN 109524364B CN 201710847527 A CN201710847527 A CN 201710847527A CN 109524364 B CN109524364 B CN 109524364B
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die
adhesive layer
layer
inductor
edge
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CN109524364A (zh
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列奥·M·希金斯Iii
弗雷德·T·布劳格
波顿·J·卡朋特
刘金梅
小马里兰奥·L·京
姚晋钟
庞兴收
王建洪
魏亚东
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NXP USA Inc
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NXP USA Inc
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Priority to CN201710847527.1A priority Critical patent/CN109524364B/zh
Priority to US15/925,022 priority patent/US10446476B2/en
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Abstract

一种封装式集成电路(IC)装置包括：具有第一电感器的第一IC管芯；在所述第一IC管芯的第一主表面上的第一粘合剂层；在所述第一粘合剂层上方的隔离层；在所述隔离层上的第二粘合剂层；在所述第二粘合剂层上的第二IC管芯；以及在所述第二IC管芯中的第二电感器，其被对准以与所述第一电感器通信。所述隔离层超出所述第二IC管芯的第一边缘延伸预定距离。

Description

具有堆叠管芯的封装式集成电路和其方法
技术领域
本公开大体上涉及集成电路封装，且更具体地说，涉及具有堆叠管芯的封装式集成电路。
背景技术
可使用电感耦合来实现集成电路(IC)管芯之间的通信，在电感耦合中，两个管芯可使用传输和接收电感器来通信。在此类应用中，在管芯之间需要电(或电流)隔离。“电流隔离”意味着在不同电路之间不存在金属或DC导电路径。举例来说，可能需要电流隔离以保护在相对较低的供电电压下操作的第一IC管芯免受在与所述第一IC管芯的相对较高的供电电压差下操作的第二IC管芯损坏。
为了使通信有效，管芯必须非常接近。然而，管芯越接近，管芯之间的电场就越高，且因此破坏性电弧放电的机率越大。因此，电流隔离应足以阻止破坏管芯之间的隔离且足以维持足够的高电压隔离以便满足安全标准。
发明内容
根据本发明的第一方面，提供一种封装式集成电路(IC)装置，包括：
第一IC管芯；
在所述第一IC管芯中的第一电感器；
在所述第一IC管芯的第一主表面上的第一粘合剂层；
在所述第一粘合剂层上方的隔离层；
在所述隔离层上的第二粘合剂层；
在所述第二粘合剂层上的第二IC管芯；
在所述第二IC管芯中的第二电感器，所述第二电感器被对准以与所述第一电感器通信，
其中所述隔离层超出所述第二IC管芯的第一边缘延伸预定距离。
在一个或多个实施例中，所述IC装置进一步包括：
在所述第二粘合剂层下方的导电环，所述导电环延伸通过所述第二IC管芯的所述第一边缘，其中所述第一边缘垂直于所述第二粘合剂层和所述导电环。
在一个或多个实施例中，所述IC装置进一步包括：
所述导电环的外周边的拐角是圆形的。
在一个或多个实施例中，所述导电环由铜制成，且环绕所述第二IC管芯的垂直于所述第二粘合剂层和所述导电环的所有边缘延伸。
在一个或多个实施例中，所述第一粘合剂层和所述第二粘合剂层中的至少一个是管芯附接膜。
在一个或多个实施例中，所述IC装置进一步包括：
引线框架标志，其中所述第一管芯附接到所述引线框架标志；
所述第一IC管芯与第一组引线指状物之间的线接合；以及
所述第二IC管芯与第二组引线指状物之间的线接合。
在一个或多个实施例中，所述隔离层包括由以下组成的群组中的一种材料：电介质、环氧树脂、双马来酰亚胺三嗪(BT)、FR-4、树脂和聚酰亚胺材料。
在一个或多个实施例中，所述第一粘合剂层、所述第二粘合剂层和所述隔离层一起的厚度为至少5微米。
在一个或多个实施例中，所述第一粘合剂层、所述第二粘合剂层和所述隔离层一起的厚度在90微米与500微米之间。
在一个或多个实施例中，所述第二IC管芯的所述第一边缘与所述绝缘层的第一边缘之间的爬电距离为至少100微米。
在一个或多个实施例中，所述第二IC管芯的所述第一边缘与延伸通过所述第二IC管芯的所述第一边缘的所述导电环的周边之间的最小距离为至少10微米。
在一个或多个实施例中，所述第一IC管芯和所述第二IC管芯中的一个耦合到高电压源，且所述第一IC管芯和所述第二IC管芯中的另一个耦合到低电压源。
根据本发明的第二方面，提供一种制造封装式集成电路(IC)装置的方法，包括：
将第一IC管芯的底侧附接到引线框架标志，其中所述第一IC管芯包括第一电感器；
利用第一粘合剂层将隔离障壁附接到所述第一IC管芯的顶侧，所述第一粘合剂层在所述第一IC管芯的所述顶侧与所述隔离障壁的底侧之间；
利用第二粘合剂层将第二IC管芯附接到所述隔离障壁的顶侧，所述第二粘合剂层在所述隔离障壁的所述顶侧与所述第二IC管芯的底侧之间，其中
所述第二IC管芯包括第二电感器，所述第二电感器被定位成将信号传达到所述第一电感器且从所述第一电感器传达信号，且
所述隔离障壁超出所述第二管芯的第一边缘延伸足以大于或等于指定爬电距离的距离。
在一个或多个实施例中，所述方法进一步包括：
从所述隔离障壁的所述一侧仅去除铜涂层的一部分以在所述隔离障壁的所述侧上留下导电材料环，其中所述环的内周边在所述第一电感器和所述第二电感器的位置外部，且所述环的外周边在所述第二IC管芯的周边外部。
在一个或多个实施例中，所述方法进一步包括：
在所述第一IC管芯上的接触点与第一组引线指状物上的接触点之间形成线接合；
在所述第二IC管芯上的接触点与第二组引线指状物上的接触点之间形成线接合；以及
包封所述引线框架标志、第一管芯、隔离层、第二管芯和线接合。
在一个或多个实施例中，所述方法进一步包括：
固化所述第一粘合剂层和所述第二粘合剂层。
在一个或多个实施例中，所述第一粘合剂层和所述第二粘合剂层中的至少一个是管芯附接膜。
在一个或多个实施例中，所述第一粘合剂层、所述第二粘合剂层和所述隔离层一起的厚度为由以下组成的群组中的至少一个：至少5微米和在90微米与500微米之间。
在一个或多个实施例中，所述指定爬电距离为至少100微米。
在一个或多个实施例中，所述第二IC管芯的所述第一边缘与延伸通过所述第二IC管芯的所述第一边缘的所述导电环的周边之间的最小距离为至少5微米。
本发明的这些和其它方面将根据下文中所描述的实施例显而易见，且参考这些实施例予以阐明。
附图说明
本发明为借助于例子示出并且不受附图的限制，在附图中类似标记指示类似元件。为简单和清晰起见示出各图中的元件，并且这些元件未必按比例绘制。
图1示出根据本发明的一个实施例的具有堆叠管芯的封装式集成电路(IC)的横截面。
图2示出根据本发明的一个实施例的图1的封装式IC的自上而下视图。
图3以流程图形式示出根据本发明的一个实施例的用于形成具有堆叠管芯的封装式IC的方法。
图4示出根据本发明的一个实施例的具有堆叠管芯的封装式IC的横截面。
图5示出根据本发明的一个实施例的图4的封装式IC的自上而下视图。
图6示出根据本发明的替代实施例的图4的封装式IC的一部分的横截面。
具体实施方式
在一个方面中，形成具有堆叠IC管芯的封装式集成电路(IC)，所述堆叠IC管芯被对准，使得所述堆叠管芯中的一个堆叠管芯中的电感器可与所述堆叠管芯中的另一堆叠管芯中的电感器通信。为了提供堆叠管芯之间的电流隔离，使用预先成形的隔离层，其延伸超出顶部管芯的边缘。在额外方面中，导电环形成在隔离层上，围绕所述顶部管芯，所述导电环在所述顶部管芯下方部分地延伸且从顶部管芯的边缘延伸到隔离层上。此环具有圆拐角，且不延伸到隔离层的边缘。
图1示出根据本发明的一个实施例的具有堆叠IC管芯16和20的封装式IC 10的横截面。当参考图1的实施例时，管芯20可被称作顶部管芯，且管芯16可被称作底部管芯。将参考图3的流程图100更详细地描述封装式IC 10的成形。
首先参考图1，封装式IC 10包括用粘合剂18附接到引线框架标志部分11的管芯16。管芯16包括形成于其中的电感器22。按需要，管芯16还可包括形成于其中的其它电路系统。管芯20堆叠在管芯16上，其中隔离层28(隔离障壁或障壁层)位于管芯20与管芯16之间。管芯20包括形成于其中的电感器24。按需要，管芯20还可包括形成于其中的其它电路系统。隔离层28的底部主表面经由粘合剂层26附接到管芯16的顶部主表面。应注意，粘合剂层26可在隔离层28下方完全延伸。管芯20的底部主表面经由粘合剂层30附接到隔离层28的顶部主表面。引线框架还包括引线框架引线12和14。线接合32连接于管芯20的顶部主表面与引线12之间，且线接合34连接于管芯16的顶部主表面与引线14之间。包封物36完全围绕堆叠管芯16和20，以及线接合32和34。
应注意，在引线框架中可存在任何数目的引线，且任何数目的线接合将引线连接到管芯16或20，但所述线接合在图1的横截面中不可见。并且，电感器22和24中的每一个示出为在每个管芯的“作用”侧上，但每个电感器可位于管芯的任一表面处，或埋在管芯内。
图2示出图1的封装式IC 10的自上而下视图。应注意，每个管芯可包括任何数目的电感器。在图2的图示中，管芯20包括四个电感器，所述四个电感器中的一个是电感器24。管芯16还可包括任何数目的电感器，但所述电感器在图2的视图中不可见。在一个实施例中，管芯20经耦合以从引线接收低电压信号，且管芯16经耦合以从引线接收高电压信号，其中高电压高于低电压。在一个实施例中，经由到引线框架的上半部上的引线的线接合进行低电压连接，且经由到引线框架的下半部上的引线的线接合进行高电压连接。还应注意，每个引线框架引线可具有多于一个线接合连接。应注意，引线框架的引线的形状和朝向以及引线框架的标志部分的形状和形式可以变化，如图2示出简化引线框架。
如在图1和图2中可见，隔离层28超出管芯20的边缘(或次表面)延伸预定距离。在一个实施例中，此预定距离确保电介质击穿不出现在包封物36中。举例来说，此距离可以是500微米。在一个实施例中，预定距离与从所有四个边缘测得的距离相同，或所述距离可在管芯20的每一侧上变化或有所不同。在所示出的实施例中，隔离层28还延伸超出管芯16的边缘(或次表面)中的一些。参考图1，相对于延伸超出管芯16的边缘的隔离层28的突出端27而限定爬电距离。此爬电距离是距离29外加组合的层28和26的厚度且外加距离31。因此，爬电距离表示从管芯20的边缘向外环绕隔离层28的突出端27且回到管芯16的边缘的回绕距离。在一个实施例中，隔离层28的突出端使得爬电距离为至少100微米，或优选地为500微米或更多。
返回参考图1，管芯16和管芯20被对准，使得电感器24可与电感器22通信。因此，电感器14和电感器22中的每一个可以是传输或接收电感器。为了允许有效通信，电感器24应非常接近于电感器22。因此，应最小化并严格控制管芯16与20之间的介入层26、28和30的厚度。然而，隔离层28应具有提供电流隔离且防止击穿隔离层28的厚度。也就是说，当电感器通信时，隔离层28提供AC和DC电隔离。隔离层28可包括电介质、环氧树脂、双马来酰亚胺三嗪(BT)、FR-4、聚酰亚胺或树脂，且隔离层28的厚度可在40微米到200微米范围内。
参考图3的方法100中所示出的封装式IC 10的成形提供封装式IC10的其它细节。在框104中，通过在框108中将底部管芯晶片背磨到所要厚度且在框110中分割底部管芯晶片以单切管芯来制备底部管芯晶片(含有底部管芯)。方法100始于开始102且进行到框134，在框134中，使用粘合剂18的环氧树脂管芯附接材料将管芯16(底部管芯)附接到引线框架标志部分11。在将管芯16附接到标志部分11之后，固化所述组合件。
在框128中，通过在框130中将隔离层安装到管芯附接膜(DAF)上且接着在框132中分割安装到DAF上的隔离层来制备隔离层，从而产生预先成形的隔离层。也就是说，隔离层在附接到管芯16之前已完全成形。返回到方法100，在框134之后，方法100进行到框136，在框136中，将具有DAF的预先成形的隔离层附接到管芯16。在此实施例中，预先成形的隔离层是隔离层28，且DAF是粘合剂层26。由于隔离层是预先成形的且安装在DAF上，因此隔离层28和粘合剂层26的组合厚度可以是均匀的，且受严格控制。如果使用凝胶或膏状粘合剂而非粘合剂层26的DAF，那么所得厚度将会较少受到控制。然后，在框138中固化具有隔离层28和粘合剂层26的管芯16的组合件。
在框112中，通过在框116中将顶部管芯晶片背磨到所要厚度，在框120中将顶部管芯晶片安装到DAF，且在框122中分割具有DAF的顶部管芯晶片以单切顶部管芯来制备顶部管芯晶片(含有顶部管芯)。在框138之后，方法100继续到框140，在框140中，将安装在DAF上的单切顶部管芯附接到隔离层28。因此，在此实施例中，单切顶部管芯是管芯20，且粘合剂层30是上面安装有管芯20的DAF。类似于用于隔离层28的DAF，用于将管芯20附接到隔离层28的DAF的使用允许管芯16与管芯20之间的层的所得厚度是均匀的且受严格控制。在替代实施例中，可使用允许可控厚度的其它粘合剂层。同样，如果使用凝胶或膏状粘合剂，那么所得厚度可能较少受到控制。应注意，取决于用于粘合剂层30的粘合剂的类型，粘合剂层30可延伸到或延伸超出隔离层28的边缘。在一个实施例中，隔离层28、粘合剂层26和粘合剂层30的组合厚度在50微米与500微米之间，或优选地在50微米与200微米之间，或优选地在90微米与110微米之间。
在框140之后，方法100进行到框142，在框142中，固化具有管芯16、隔离层28和管芯20的组合件以固化粘合剂层30。在替代实施例中，可能不执行框138的固化，在此情况下，仅执行框142中的固化以固化粘合剂层26和30。在框142之后，方法100进行到框144，在框144中，形成从引线框架引线到管芯16和管芯20的线接合连接，例如线接合34和32。方法100继续到框146，在框146中，用包封物36包封管芯16、隔离层28、管芯20和线接合。可使用任何已知技术来形成线接合并包封管芯。可执行额外步骤，例如修整和形成引线，以产生大体上完成的封装式IC 10。方法100在结束148处结束。
应注意，可在开始方法100之前执行离线制备框，例如框104、128和112。并且，可以任何次序执行所述框。并且，应注意，尽管示出了两个管芯，但可按需要使用任何数目的管芯和预先成形的隔离层。此外，预先成形的隔离层可具有各种不同大小和形状。尽管所示出实施例参考了基于引线框架的封装，但可使用也包括具有介入的预先成形隔离层(例如层28)的堆叠管芯的其它封装。举例来说，例如隔离层28的隔离层可用于具有有机或无机衬底的球状栅格阵列(BGA)封装。
图4示出类似于封装式IC 10的封装式IC 50的截面视图，其中类似数字指示类似元件。然而，封装式IC 50包括在隔离层28上方的导电环40，使得导电环40位于粘合剂层30与隔离层28之间。图5示出图4的封装式IC 50的自上而下视图，其类似于图2的自上而下视图，但具有环40，其中类似数字指示类似参考标号。如在图5中可见，导电环40围绕顶部管芯20，且具有内周边42和外周边44。内周边42位于管芯20下方(也就是说，环40的内周边42在管芯20下方延伸)，且远离管芯20的电感器。环40的外周边44超出管芯20的边缘(或次表面，其垂直于粘合剂30)延伸预定距离。在一个实施例中，此预定距离是100微米。导电环40可以是金属，例如铜。应注意，环40的存在影响了爬电距离。并非如图1中所见从距离29开始，爬电距离是从环40的外周边44到隔离层28的边缘的距离，外加层28和26的总厚度，且外加回到管芯16的距离。也就是说，图4和图5的实施例中的爬电距离开始于环40的外缘而非管芯20的外缘，且回绕隔离层28的突出端27且回到管芯16的边缘。
如图5中所说明，环40的内周边和外周边两者是圆形的。此圆化两个周边的拐角避免了尖锐形状或拐角。导电环40的大小足够大以确保管芯20的所有拐角完全在导电环40内。由于环绕作为分割过程的结果而形成的管芯拐角的电场强度比平坦区域中的电场强度高得多，因此(隔离层28的)绝缘材料易于在这些拐角处击穿。因此，具有含圆拐角的连续导电环(例如环40)减小了管芯拐角处的电场强度，并因此降低了会导致破坏隔离层的电晕效应的风险。在一个实施例中，仅环40的外周边的拐角是圆形的，且内周边的拐角不是圆形的。也就是说，圆化内周边的拐角可能不是必要的，这是因为所述拐角不具有外周边的拐角所具有的强场(high field)。因此，虽然内周边的拐角可以是圆形的，但大部分价值通过圆化外周边的拐角来实现。
返回参考图3的方法100，为了包括导电环40，唯一的变化是在框128中制备预先成形的隔离层。在一个实施例中，在框130中安装到DAF的绝缘层作为在两侧上覆铜的核心绝缘材料而出现。因此，对于图1和图2的实施例，可蚀刻掉或去除来自两侧的所有铜。在图4和图5的实施例中，可从底部主表面去除铜且在顶部主表面上图案化并蚀刻铜以产生铜环。可接着将绝缘层的底部主表面安装到DAF并进行分割，使得形成具有形成于顶部主表面上的铜环和底部主表面上的DAF的预先成形的绝缘层。因此，在框136中可附接此预先成形的绝缘层，使得当预先成形的隔离层附接到管芯16时，所述预先成形的隔离层将具有导电环40以及粘合剂层30。
图6示出图4和图5的预先成形的绝缘层的替代实施例，其中并非从绝缘层的底部主表面去除所有铜，图案化并蚀刻底部主表面以便在绝缘层的底部表面上产生第二导电环46。接着将具有顶部主表面上的环40和底部主表面上的环46的绝缘层安装到DAF。在此实施例中，环46在绝缘层的底部主表面与DAF之间。因此，如果在图4和图5的实施例中使用此预先成形的绝缘层，那么环46位于绝缘层28与粘合剂层26之间。环46也可具有内周边和外周边，所述内周边和外周边也将包括圆拐角。在环46的情况下，将从环40的边缘向外环绕绝缘层28的突出端27且回到环46的边缘来测量爬电距离。应注意，在替代实施例中，环40和46可具有不同尺寸。
在一个实施例中，粘合剂层26和粘合剂层30中的每一个的厚度在50微米与200微米之间，或在90微米与110微米之间。在一个实施例中，隔离层28的突出端和导电环40的宽度(如果存在)产生至少100微米的爬电距离。在一个实施例中，管芯20的边缘与导电环40的外周边44之间的最小距离是500微米。
因此，现在可了解，提供堆叠管芯封装，所述堆叠管芯封装提供管芯之间的电流隔离，以允许在每个管芯的电感器之间有效通信。使用预先成形的隔离层来提供邻近堆叠管芯之间的隔离。可严格控制与在隔离层与邻近管芯中的每一个之间使用的粘合剂层的厚度组合的预先成形的隔离层厚度，以允许电感器保持非常接近。并且，预先成形的隔离层延伸超出顶部管芯的边缘以保护隔离层免受堆叠管芯之间的电弧电场损坏。在一个实施例中，具有圆形内周边和外周边的导电环形成于隔离层上，围绕位于隔离层上的顶部管芯。导电环将减轻电场集中，且可帮助减轻电场的电晕效应并因此降低损坏隔离层的可能性。应注意，在替代实施例中，导电环的内周边无需是圆形的。
还应了解，如本文中所引用的IC管芯可指多种电子组件中的任一个，包括(但不限于)半导体装置、被动装置(例如继电器、电阻器、电感器、电容器、二极管、功率晶体管、振荡器等等)，或其它类型的电子装置。
由于实施本发明的设备大部分由本领域的技术人员已知的电子组件和电路形成，因此为了理解和了解本发明的基本概念并且为了不混淆或偏离本发明的教示，将不会以比以上图示认为必要的任何更大程度阐述电路细节。
尽管本发明已关于具体导电类型或电势的极性进行描述，但本领域的技术人员会了解到，可颠倒导电类型或电势的极性。
此外，在说明书和权利要求书中的术语“正面”、“背面”、“顶部”、“底部”、“在……上方”、“在……下方”等等(如果存在)用于描述性目的且未必用于描述永久性相对位置。应理解，如此使用的术语在适当情况下可互换，使得本文中所描述的实施例例如能够相比本文中所说明或以其它方式描述的那些朝向以其它朝向进行操作。
虽然本文中参考具体实施例描述了本发明，但是在不脱离如所附权利要求书所阐述的本发明的范围的情况下可以进行各种修改和改变。举例来说，可使用除引线框架以外的不同封装技术，且可使用除DAF以外的不同粘合剂层。因此，说明书和图应视为示意性而不是限制性意义，并且预期所有这些修改都包括在本发明的范围内。并不希望将本文中关于具体实施例描述的任何益处、优点或针对问题的解决方案解释为任何或所有权利要求的关键、必需或必不可少的特征或元件。
如本文中所使用，术语“耦合”并不旨在局限于直接耦合或机械耦合。
此外，如本文中所使用，术语“一”被定义为一个或多于一个。而且，权利要求书中例如“至少一个”和“一个或多个”等介绍性短语的使用不应解释为暗示由不定冠词“一”引入的另一权利要求要素将包含此引入的权利要求要素的任何特定权利要求限制为仅含有一个此要素的发明，甚至是在同一权利要求包括介绍性短语“一个或多个”或“至少一个”和例如“一”等不定冠词时也如此。对于定冠词的使用也是如此。
除非另外陈述，否则例如“第一”和“第二”等术语用以任意地区别这些术语所描述的元件。因此，这些术语未必意图指示这些元件的时间优先级或其它优先级。
以下为本发明的各种实施例。
在一个实施例中，一种封装式集成电路(IC)装置包括：第一IC管芯；在所述第一IC管芯中的第一电感器；在所述第一IC管芯的第一主表面上的第一粘合剂层；在所述第一粘合剂层上方的隔离层；在所述隔离层上的第二粘合剂层；在所述第二粘合剂层上的第二IC管芯；在所述第二IC管芯中的第二电感器，所述第二电感器被对准以与所述第一电感器通信，其中所述隔离层超出所述第二IC管芯的第一边缘延伸预定距离。在此实施例的一个方面中，所述IC装置另外包括在所述第二粘合剂层下方的导电环，所述导电环延伸通过所述第二IC管芯的所述第一边缘，其中所述第一边缘垂直于所述第二粘合剂层和所述导电环。在另一方面，所述IC装置另外包括：所述导电环的外周边的拐角是圆形的。在另一方面中，所述导电环由铜制成，且环绕所述第二IC管芯的垂直于所述第二粘合剂层和所述导电环的所有边缘延伸。在此上述实施例的另一方面中，所述第一粘合剂层和所述第二粘合剂层中的至少一个是管芯附接膜。在另一方面中，所述IC装置另外包括：引线框架标志，其中所述第一管芯附接到所述引线框架标志；所述第一IC管芯与第一组引线指状物之间的线接合；以及所述第二IC管芯与第二组引线指状物之间的线接合。在又一方面中，所述隔离层包括由以下组成的群组中的一种材料：电介质、环氧树脂、双马来酰亚胺三嗪(BT)、FR-4、树脂和聚酰亚胺材料。在另一方面中，所述第一粘合剂层、所述第二粘合剂层和所述隔离层一起的厚度为至少5微米。在另一方面中，所述第一粘合剂层、所述第二粘合剂层和所述隔离层一起的厚度在90微米与500微米之间。在另一方面中，所述第二IC管芯的所述第一边缘与所述绝缘层的第一边缘之间的爬电距离为至少100微米。在另一方面，所述第二IC管芯的所述第一边缘与延伸通过所述第二IC管芯的所述第一边缘的所述导电环的周边之间的最小距离为至少10微米。在另一方面中，所述第一IC管芯和所述第二IC管芯中的一个耦合到高电压源，且所述第一IC管芯和所述第二IC管芯中的另一个耦合到低电压源。
在另一实施例中，一种制造封装式集成电路(IC)装置的方法包括：将第一IC管芯的底侧附接到引线框架标志，其中所述第一IC管芯包括第一电感器；利用第一粘合剂层将隔离障壁附接到所述第一IC管芯的顶侧，所述第一粘合剂层在所述第一IC管芯的所述顶侧与所述隔离障壁的底侧之间；利用第二粘合剂层将第二IC管芯附接到所述隔离障壁的顶侧，所述第二粘合剂层在所述隔离障壁的所述顶侧与所述第二IC管芯的底侧之间，其中所述第二IC管芯包括第二电感器，所述第二电感器被定位成将信号传达到所述第一电感器且从所述第一电感器传达信号，且所述隔离障壁超出所述第二管芯的第一边缘延伸足够大于或等于指定爬电距离的距离。在另一方面，所述方法另外包括从所述隔离障壁的所述一侧仅去除铜涂层的一部分以在所述隔离障壁的所述侧上留下导电材料环，其中所述环的内周边在所述第一电感器和所述第二电感器的位置外部，且所述环的外周边在所述第二IC管芯的周边外部。在另一方面，所述方法另外包括：在所述第一IC管芯上的接触点与第一组引线指状物上的接触点之间形成线接合；在所述第二IC管芯上的接触点与第二组引线指状物上的接触点之间形成线接合；以及包封所述引线框架标志、第一管芯、隔离层、第二管芯和线接合。在另一方面中，所述方法另外包括固化所述第一粘合剂层和所述第二粘合剂层。在另一方面中，所述第一粘合剂层和所述第二粘合剂层中的至少一个是管芯附接膜。在又一方面中，所述第一粘合剂层、所述第二粘合剂层和所述隔离层一起的厚度为由以下组成的群组中的至少一个：至少5微米和在90微米与500微米之间。在另一方面中，所述指定爬电距离为至少100微米。在另一方面，所述第二IC管芯的所述第一边缘与延伸通过所述第二IC管芯的所述第一边缘的所述导电环的周边之间的最小距离为至少5微米。

Claims (9)

1.一种封装式集成电路(IC)装置，其特征在于，包括：
第一IC管芯；
在所述第一IC管芯中的第一电感器；
在所述第一IC管芯的第一主表面上的第一粘合剂层；
在所述第一粘合剂层上方的隔离层；
在所述隔离层上的第二粘合剂层；
在所述第二粘合剂层上的第二IC管芯；其中所述第二IC管芯的第一主表面与所述第二粘合剂层直接接触；
在所述第二IC管芯中的第二电感器，所述第二电感器被对准以与所述第一电感器通信，
引线框架标志，其中所述第一IC管芯附接到所述引线框架标志；
所述第一IC管芯与第一组引线指状物之间的线接合；以及
所述第二IC管芯与第二组引线指状物之间的线接合；其中所述第二IC管芯和所述第二组引线指状物之间的线接合的一端连接到所述第二IC管芯的与所述第一主表面相反的第二主表面；
其中所述隔离层超出所述第二IC管芯的第一边缘延伸预定距离。
2.根据权利要求1所述的IC装置，其特征在于，进一步包括：
在所述第二粘合剂层下方的导电环，所述导电环延伸通过所述第二IC管芯的所述第一边缘，其中所述第一边缘垂直于所述第二粘合剂层和所述导电环。
3.根据权利要求1所述的IC装置，其特征在于：
所述第一粘合剂层和所述第二粘合剂层中的至少一个是管芯附接膜。
4.根据权利要求1所述的IC装置，其特征在于：
所述隔离层包括由以下组成的群组中的一种材料：电介质、环氧树脂、双马来酰亚胺三嗪(BT)、FR-4、树脂和聚酰亚胺材料。
5.根据权利要求1所述的IC装置，其特征在于：
所述第二IC管芯的所述第一边缘与所述隔离层的第一边缘之间的爬电距离为至少100微米。
6.根据权利要求2所述的IC装置，其特征在于：
所述第二IC管芯的所述第一边缘与延伸通过所述第二IC管芯的所述第一边缘的所述导电环的周边之间的最小距离为至少10微米。
7.根据权利要求1所述的IC装置，其特征在于：
所述第一IC管芯和所述第二IC管芯中的一个耦合到高电压源，且所述第一IC管芯和所述第二IC管芯中的另一个耦合到低电压源。
8.一种制造封装式集成电路(IC)装置的方法，其特征在于，包括：
将第一IC管芯的底侧附接到引线框架标志，其中所述第一IC管芯包括第一电感器；
利用第一粘合剂层将隔离障壁附接到所述第一IC管芯的顶侧，所述第一粘合剂层在所述第一IC管芯的所述顶侧与所述隔离障壁的底侧之间；
利用第二粘合剂层将第二IC管芯附接到所述隔离障壁的顶侧，所述第二粘合剂层在所述隔离障壁的所述顶侧与所述第二IC管芯的底侧之间，所述第二IC管芯的底侧与所述第二粘合剂层直接接触；
形成从第一组引线指状物到所述第一IC管芯之间的线接合连接；以及
形成从第二组引线指状物到所述第二IC管芯之间的线接合连接，所述第二IC管芯和所述第二组引线指状物之间的线接合连接的一端连接到所述第二IC管芯的与所述底侧相反的顶部主表面；其中
所述第二IC管芯包括第二电感器，所述第二电感器被定位成将信号传达到所述第一电感器且从所述第一电感器传达信号，且
所述隔离障壁超出所述第二IC管芯的第一边缘延伸足以大于或等于指定爬电距离的距离。
9.根据权利要求8所述的方法，其特征在于：
所述第一粘合剂层、所述第二粘合剂层和所述隔离障壁一起的厚度为至少5微米。
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