CN1095194C - Repairing test method for semiconductor device - Google Patents
Repairing test method for semiconductor device Download PDFInfo
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- CN1095194C CN1095194C CN97122985A CN97122985A CN1095194C CN 1095194 C CN1095194 C CN 1095194C CN 97122985 A CN97122985 A CN 97122985A CN 97122985 A CN97122985 A CN 97122985A CN 1095194 C CN1095194 C CN 1095194C
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Abstract
The present invention relates to a repairing test method for semiconductor devices. One aligning key is used for one crystal grain, and thus, the space occupied by the aligning key is reduced. As a result, the present invention avoids the situations of the approach of each aligning key and lines caused by too large space of each aligning key or erroneous judgement of a laser repairing machine caused by the size reduction of each aligning key. Besides, relative coordinates are calculated by the aligning key of any one periphery crystal grain according to the fixed crystal grains and the length and the width of a cutting path. Thus, the present invention effectively improves laser repairing precision, finds out correct positions of damaged lines and improves repairing rate and the qualified rate of crystal grains.
Description
The present invention relates to a kind of repairing test method of semiconductor device.
The memory device of prior art, static RAM (Static Random AccessMemory for example, SRAM), dynamic random access memory (Dynamic Random Access Memory, DRAM), often because minimum defective makes the entire device can't normal operation.For avoiding this situation to take place, generally scan in the wafer two L types or T type alignment keys (Laser Target) with laser repairing, find out the position of damaged line then, carry out patch work at last.
Because the progress of technology level, make die space dwindle, if but alignment keys dwindled or with line design too near alignment keys, so often make correctly identification of laser repairing, cause and fail when repairing to burn the circuit of repairing to needs, make repairing rate and wafer passing rate descend.
Fig. 1 a and 1b represent the repairing test method of prior art use L type alignment keys and the length and width figure of L type alignment keys.
At first, please refer to Fig. 1 a, on wafer, find out and to repair crystal grain 10, on crystal grain 10, have two L type alignment keys (12 and 14).Then see also Fig. 1 b, it is the enlarged drawing of L type alignment keys 12.Have X-axis coordinate 16 and Y-axis coordinate 18 on L type alignment keys, wherein the outside length and width of L type alignment keys all are 40 μ m, and the set width of L type own is 5 μ m.Another L type alignment keys 14 also has identical structure.Because X-axis coordinate and Y-axis coordinate are set in advance on two L type alignment keys, so, laser repairing is when carrying out X-axis scanning and Y-axis scanning, as long as find out the position of two L type alignment keys, laser repairing just can be according to above-mentioned coordinate data, damage the circuit relative position by input, further find out and damage circuit position 8.Laser repairing replaces with the new line with identical function with the blowout of damaged line then, makes crystal grain can continue normal operation.
Use identical step, L type alignment keys is replaced with T type alignment keys, can utilize remaining space more fully.
Fig. 2 a～2b represents the repairing test method of prior art use T type alignment keys and the length and width figure of T type alignment keys.
At first, please refer to Fig. 2 a, on wafer, find out one and will repair crystal grain 20, (22 and 24 is one group to have two T type alignment keys on crystal grain 20,26 and 28 is one group), then see also Fig. 2 b, it is the enlarged drawing of T type alignment keys 22 and 24, T type alignment keys 22 and 24 comprises a upright yi word pattern 22, has X-axis coordinate 32; With a horizontal upright yi word pattern 24, has Y-axis coordinate 34.Upright yi word pattern 22 length are 40 μ m, and wide is 5 μ m.Horizontal upright yi word pattern 24 length are 5 μ m, and wide is 40 μ m.Another group T type alignment keys 26 and 28 also has same structure.Because X-axis coordinate and Y-axis coordinate are set in advance on two T type alignment keys, so laser repairing is when carrying out X-axis scanning and Y-axis scanning, as long as find out the position of two T type alignment keys, laser repairing just can be according to above-mentioned coordinate data, damage the circuit relative position by input, further find out and damage circuit position 30, laser repairing is with the blowout of damaged line then, replace with circuit, make crystal grain continue normal operation with identical function.
But along with technological progress, the space of crystal grain reduces gradually, but laser repairing wants the size of the alignment keys of identification but can't relatively dwindle, otherwise cause the situation of erroneous judgement easily, if but the shared space of alignment keys is excessive, will make crystal grain internal wiring and alignment keys near excessively so, cause the situation of erroneous judgement equally, make the repairing rate of laser repairing and the qualification rate of crystal grain descend.Another problem is that the coordinate of alignment keys is provided by Production Engineer or design engineer in addition, if the deviation data of wrong property also can have influence on the effect of repairing.
Therefore, main purpose of the present invention is exactly to reduce the shared space of alignment keys, uses two alignment keys to make only to use the method for an alignment keys into an original crystal grain, reduce because of alignment keys and intragranular circuit near excessively, cause the laser repairing erroneous judgement, influence qualification rate and repairing rate.
The alignment keys of the crystal grain around another object of the present invention is to utilize is as symmetrical alignment keys, can correctly release its relevant coordinate, when making laser repairing scanning, can not produce the error of data that the engineer gives, the situation that causes fix errors is so precision can increase substantially.
A further object of the present invention is with T type alignment keys, not only has above-mentioned two alignment keys of saving alignment keys spaces and utilizing peripheral crystal grain improving the advantage of precision, and can make full use of remaining space and put alignment keys, reaches the benefit of easy configuration.
According to above-mentioned purpose of the present invention, a kind of repairing test method of semiconductor device is proposed, be used for a laser repairing, comprise the following steps:
At first provide a wafer, and intercrystalline separates with Cutting Road, a L type alignment keys is all arranged, wherein each L type alignment keys identical position on each crystal grain of correspondence on each crystal grain with a plurality of crystal grain;
Then in these crystal grain, get arbitrary L type alignment keys that the crystal grain of damaged line is arranged, be set at a basic alignment keys, and to other outer crystal grain of basic alignment keys, the L type alignment keys of approaching arbitrary crystal grain around getting, be set at a symmetrical alignment keys, utilize basic alignment keys and symmetrical alignment keys other X-axis coordinate and Y-axis coordinate, after scanning with laser repairing, import a position of damaged line again, find out the position of damaged line,, replace with one and have the new line of identical function circuit the blowout of damaged line.
Also L type alignment keys can be replaced with T type alignment keys, achieve the above object.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. elaborates.In the accompanying drawing:
Fig. 1 a～1b represents to use in the prior art repairing test method of L type alignment keys and the length and width figure of L type alignment keys;
Fig. 2 a～2b represents to use in the prior art repairing test method of T type alignment keys and the length and width figure of T type alignment keys;
Fig. 3 illustrates according to the first embodiment of the present invention, a kind of semiconductor device repairing test method that uses L type alignment keys; And
Fig. 4 illustrates according to a second embodiment of the present invention, a kind of semiconductor device repairing test method that uses T type alignment keys.
First embodiment
Fig. 3 illustrates according to the first embodiment of the present invention, a kind of repairing test method that uses the semiconductor device of L type alignment keys.
At first please refer to Fig. 3, show among the figure and get nine crystal grain that constitute by polysilicon that are connected, comprise that crystal grain 41 is to crystal grain 49 by a wafer.Each crystal grain has a L type alignment keys that is made of metal respectively, comprises that crystal grain 41 to crystal grain 49 distinguishes corresponding L type alignment keys 51 to L type alignment keys 59.The relative position of each L type alignment keys place crystal grain is all identical, and wherein the peripheral length and width of each L type alignment keys all are 40 μ m, and the width of L type alignment keys own is 5 μ m.L type alignment keys inner and upper vertically with below laterally have an X-axis coordinate and a Y-axis coordinate respectively.This external each crystal grain periphery is separated crystal grain by a Cutting Road 50.
On wafer, in all crystal grain, can be set at a basic alignment keys with the L type alignment keys of easily getting arbitrary crystal grain.But generally be the crystal grain that damages circuit with having, for example be set at basic alignment keys with the L type alignment keys 55 that damage circuit crystal grain 45 is arranged among the figure.Then with in other crystal grain outside this basic alignment keys, the L type alignment keys of getting arbitrary crystal grain is set at a symmetrical alignment keys, generally is with the crystal grain around the most approaching basic alignment keys, for example gets the L type alignment keys 56 of the crystal grain 46 on the right, is set at symmetrical alignment keys.
Because the length and width of each crystal grain 41 to 49 and Cutting Road 50 sizes are fixing, and the relative position that each L type alignment keys is positioned on the crystal grain is identical again, as long as so know the coordinate of the X-axis and the Y-axis of basic alignment keys, just can extrapolate the coordinate of the X-axis and the Y-axis of symmetrical alignment keys thus, be respectively (200 if set the X-axis coordinate and the Y-axis coordinate of basic alignment keys 55,220) with (180,200), unit is μ m, the length that contains Cutting Road at intercrystalline, width is from being respectively (1000,1500), and that symmetrical alignment keys 56 is positioned at first alignment keys 55 is right-hand, so as long as laterally adding 1000 μ m, X-axis coordinate and the Y-axis coordinate that can calculate symmetrical alignment keys 56 are respectively (200+1000=800,220) with (180+1000=820,200), if selecting the L type symmetry key of other crystal grain is symmetrical alignment keys, for example go up (crystal grain 42), (crystal grain 48) down, a left side (crystal grain 44), right (crystal grain 46), as long as X-axis coordinate and Y-axis coordinate with basic symmetrical key, add and subtract the length that intercrystalline contains Cutting Road at longitudinal direction or transverse direction, wide, just can find out the coordinate of symmetrical alignment keys position.
Then utilize the coordinate of above-mentioned basic alignment keys and this symmetry alignment keys, input laser repairing inside, find out their position with scanning, make the relative coordinate of laser repairing with them, under the input of damaged line position, find out correct repairing position, the blowout of a damaged line then replaces with one and has the more new line of identical function.Second embodiment
Fig. 4 has illustrated according to a second embodiment of the present invention, a kind of semiconductor device repairing test method that uses T type alignment keys.
Show among Fig. 4 and get nine crystal grain that constitute by polysilicon that are connected, comprise that crystal grain 61 is to crystal grain 69 by a wafer.Each crystal grain has a T type alignment keys respectively, comprises that crystal grain 61 to crystal grain 69 distinguishes corresponding T type alignment keys 71～72 to T type alignment keys 87～88.The relative position of each T type alignment keys place crystal grain is all identical.Each T type alignment keys is made of two yi word patterns, and the long limit of yi word pattern is 40 μ m, and minor face is 5 μ m.In two yi word patterns, one is upright yi word pattern, and another is horizontal upright yi word pattern.Upright yi word pattern has an X-axis coordinate, and horizontal upright yi word pattern has a Y-axis coordinate.This external each crystal grain is with all outward and cuts 70, and it separates crystal grain.
On wafer, in all crystal grain, can be set at a basic alignment keys with the T type alignment keys of easily getting arbitrary crystal grain.Generally so that the T type alignment keys of the crystal grain that damages circuit to be arranged, for example the T type alignment keys 79～80 of the crystal grain of repairing with need among the figure 65 is set at basic alignment keys, then with in other crystal grain outside this basic alignment keys, the T type alignment keys of getting arbitrary crystal grain is set at a symmetrical alignment keys.Generally when selecting, all can be with the crystal grain around the most approaching basic alignment keys, for example the T type alignment keys 85～86 of the crystal grain 68 of the side of taking off is set at symmetrical alignment keys.
Because the length and width of each crystal grain 61 to 69 and the size of Cutting Road 70 are fixed, the relative position of each L type alignment keys on crystal grain is identical again, as long as so know the X-axis and the Y-axis coordinate of basic alignment keys, just can extrapolate the X-axis and the Y-axis coordinate of symmetrical alignment keys thus, the T type alignment keys 79～80 of for example setting crystal grain 65 is basic alignment keys, its X-axis coordinate and Y-axis coordinate are respectively (200,220) with (180,-200), unit is μ m, the length that contains Cutting Road at intercrystalline, width is from being respectively (1000,1500), and that symmetrical alignment keys 85～86 is positioned at basic alignment keys 79～80 is right-hand, so as long as vertically reducing by 1500 μ m, X-axis coordinate and the Y-axis coordinate that can calculate alignment keys 85～86 are respectively (200,220-1500=-1280) with (180,200-1500=-1300), if selecting the T type alignment keys of other crystal grain is symmetrical alignment keys, for example go up (crystal grain 62), (crystal grain 68) down, a left side (crystal grain 64), right (crystal grain 66), as long as X-axis coordinate and Y coordinate with basic alignment keys, add and subtract the length that intercrystalline contains Cutting Road at longitudinal direction or transverse direction, wide, just can find out the coordinate of symmetrical alignment keys position.
Then utilize the coordinate of above-mentioned basic alignment keys and this symmetry alignment keys, input laser repairing inside, find out their position with scanning, make the relative coordinate of laser repairing with them, under the input of damaged line position, find out correct repairing position,, replace with one and have the new line of identical function the blowout of a damaged line.
Therefore, one of feature of the present invention is exactly that a crystal grain only uses an alignment keys, make the alignment keys minimizing that takes up space, and do not need to dwindle the size of alignment keys or use two alignment keys, avoid alignment keys and circuit near excessively, make laser repairing produce erroneous judgement, influence repairing rate and crystal grain qualification rate.
Another feature of the present invention is to use the alignment keys of arbitrary crystal grain on every side as symmetrical alignment keys, because the length and width of crystal grain and Cutting Road are fixed, thus can release its correct relative coordinate, when making laser repairing scanning, can not produce fix errors, so can increase substantially precision.
Of the present inventionly one be characterized as and use T type alignment keys again, not only can save an alignment keys space, and utilize the alignment keys of peripheral crystal grain to improve precision, can also fully use remaining space, place alignment keys, further improve crystal grain effectiveness.
Though disclose the present invention in conjunction with two preferred embodiments; but it is not in order to limit the present invention; those skilled in the art can make various changes and retouching without departing from the spirit and scope of the present invention, so protection scope of the present invention should be limited by accompanying Claim.
Claims (22)
1. the repairing test method of a semiconductor device is used for a laser repairing, comprises the following steps:
Wafer with a plurality of crystal grain is provided, wherein has a L type alignment keys on each described crystal grain, and each described L type alignment keys identical position on each described crystal grain of correspondence;
In these crystal grain, get the described L type alignment keys of arbitrary crystal grain, be set at a basic alignment keys;
Get the described L type alignment keys of arbitrary crystal grain in the crystal grain outside described basic alignment keys, be set at a symmetrical alignment keys;
Utilize described basic alignment keys and described symmetrical alignment keys,, find out a damaged line with described laser repairing scanning; And
Described damaged line is blown, replace with a new line more.
2. the method for claim 1, wherein said crystal grain is a polysilicon.
3. method as claimed in claim 2, wherein said crystal grain around with a Cutting Road with each described die separation.
4. the method for claim 1, wherein said L type alignment keys is a metal.
5. method as claimed in claim 4, the peripheral length and width of wherein said L type alignment keys all are 40 μ m, and the width of described L type alignment keys own is 5 μ m.
6. method as claimed in claim 4, wherein said L type alignment keys inner and upper has an X-axis coordinate, and below, described L type alignment keys inside has a Y-axis coordinate.
7. the method for claim 1, the described crystal grain of wherein said basic alignment keys is set in the crystal grain of described damaged line.
8. method as claimed in claim 7, the described crystal grain of wherein said symmetrical alignment keys are used the crystal grain around the described basic alignment keys.
9. the method for claim 1, wherein find described damaged line, be to utilize described basic alignment keys and described symmetrical alignment keys other described X-axis coordinate and described Y-axis coordinate, after scanning with described laser repairing, utilize a position of described damaged line again, find out described damaged line.
10. the method for claim 1, wherein said damaged line and described more new line are the circuit with identical function.
11. method as claimed in claim 10, wherein described damaged line being blown is with a blowout.
12. the repairing test method of a semiconductor device is used for a laser repairing, comprises the following steps:
Wafer with a plurality of crystal grain is provided, wherein has a T type alignment keys on each described crystal grain, and each described T type alignment keys identical position on each described crystal grain of correspondence;
In described crystal grain, get the described T type alignment keys of arbitrary crystal grain, be set at a basic alignment keys;
Get the described T type alignment keys of arbitrary crystal grain the described crystal grain outside described basic alignment keys, be set at a symmetrical alignment keys;
Utilize described basic alignment keys and described symmetrical alignment keys,, find out a damaged line with described laser repairing scanning; And
Described damaged line is blown, replace with a new line more.
13. method as claimed in claim 12, wherein said crystal grain are a polysilicon.
14. method as claimed in claim 13, wherein said crystal grain around with a Cutting Road with each described die separation.
15. method as claimed in claim 12, wherein said T type alignment keys is a metal.
16. method as claimed in claim 15, wherein said T type alignment keys is two yi word patterns, and the long limit of described yi word pattern is 40 μ m, minor face is 5 μ m, one of two yi word patterns is a upright yi word pattern, and another is a horizontal upright yi word pattern, and two yi word patterns are non-intersect overlapping.
17. method as claimed in claim 16, the described upright yi word pattern of wherein said T type alignment keys has an X-axis coordinate, and described horizontal upright yi word pattern has a Y-axis coordinate.
18. method as claimed in claim 12, the described crystal grain of wherein said basic alignment keys is set in the described crystal grain of described damaged line.
19. method as claimed in claim 18, the described crystal grain of wherein said symmetrical alignment keys are used the described crystal grain around the described basic alignment keys.
20. method as claimed in claim 12, wherein find described damaged line, be to utilize described basic alignment keys and described symmetrical alignment keys other described X-axis coordinate and described Y-axis coordinate, after scanning with described laser repairing, utilize a position of described damaged line again, find out described damaged line.
21. method as claimed in claim 12, wherein said damaged line and described more new line are the circuit with identical function.
22 methods as claimed in claim 21, wherein described damaged line being blown is with a blowout.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97122985A CN1095194C (en) | 1997-11-28 | 1997-11-28 | Repairing test method for semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97122985A CN1095194C (en) | 1997-11-28 | 1997-11-28 | Repairing test method for semiconductor device |
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| Publication Number | Publication Date |
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| CN1223455A CN1223455A (en) | 1999-07-21 |
| CN1095194C true CN1095194C (en) | 2002-11-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN97122985A Expired - Lifetime CN1095194C (en) | 1997-11-28 | 1997-11-28 | Repairing test method for semiconductor device |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005093441A1 (en) * | 2004-03-26 | 2005-10-06 | Quanta Display Inc. | Line defect testing-repairing device and method |
| CN100357752C (en) * | 2004-03-26 | 2007-12-26 | 广辉电子股份有限公司 | Line defect detection maintenance equipment and method |
| CN100446175C (en) * | 2005-09-26 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Method for focus plasma beam mending with precisivelly positioning |
| CN102689366A (en) * | 2011-03-23 | 2012-09-26 | 正恩科技有限公司 | *-character searching method of wafer fragment edge |
| KR101269443B1 (en) * | 2011-09-20 | 2013-05-30 | 참엔지니어링(주) | Apparatus for testing and repairing of substrate |
| CN108054110A (en) * | 2017-12-11 | 2018-05-18 | 德淮半导体有限公司 | Cutting Road width defines method, bare chip scan method and bare chip scanning device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4558225A (en) * | 1982-09-09 | 1985-12-10 | Tokyo Shibaura Denki Kabushiki Kaisha | Target body position measuring method for charged particle beam fine pattern exposure system |
| US5294975A (en) * | 1992-10-15 | 1994-03-15 | Altera Corporation | Laser alignment target for semiconductor integrated circuits |
| CN1115497A (en) * | 1994-07-07 | 1996-01-24 | 现代电子产业株式会社 | Method for repairing a defect-generated cell using a laser |
-
1997
- 1997-11-28 CN CN97122985A patent/CN1095194C/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4558225A (en) * | 1982-09-09 | 1985-12-10 | Tokyo Shibaura Denki Kabushiki Kaisha | Target body position measuring method for charged particle beam fine pattern exposure system |
| US5294975A (en) * | 1992-10-15 | 1994-03-15 | Altera Corporation | Laser alignment target for semiconductor integrated circuits |
| CN1115497A (en) * | 1994-07-07 | 1996-01-24 | 现代电子产业株式会社 | Method for repairing a defect-generated cell using a laser |
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| CN1223455A (en) | 1999-07-21 |
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