CN109514421A - A kind of chemical-mechanical polisher - Google Patents
A kind of chemical-mechanical polisher Download PDFInfo
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- CN109514421A CN109514421A CN201910031948.6A CN201910031948A CN109514421A CN 109514421 A CN109514421 A CN 109514421A CN 201910031948 A CN201910031948 A CN 201910031948A CN 109514421 A CN109514421 A CN 109514421A
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- mechanical polisher
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- 238000005498 polishing Methods 0.000 claims abstract description 113
- 238000004140 cleaning Methods 0.000 claims abstract description 46
- 238000001035 drying Methods 0.000 claims abstract description 38
- 239000000126 substance Substances 0.000 claims abstract description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 229910001868 water Inorganic materials 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims 2
- 238000012545 processing Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000002253 acid Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 210000000746 body region Anatomy 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a kind of chemical-mechanical polisher, which includes: multiple rows of multiple polishing units；The reprinting platform of multiple rows of polishing unit side is set, for placing the wafer after polished wafer and cleaning-drying；The multiple platforms of an at least row between adjacent two rows of polishing unit are set, for temporarily placing the wafer after polished wafer and polishing；It clears and washes and drying unit with multiple rows of polishing unit disposed in parallel at least one；The supply unit of multiple rows of polishing unit other side is set, for the wafer after polishing to be delivered to cleaning and drying unit side；And the manipulator for picking and placing wafer.Chemical-mechanical planarization and wet-cleaning and dry two processing steps are reduced to a step and completed by the present invention, may be implemented wafer do into do.Without the included cleaning after polishing, separate chemical CMP apparatus and the occupied Clean room area of wet clean equipment are reduced, processing step is simplified.
Description
Technical field
The present invention relates to field of semiconductor devices, and in particular to a kind of chemical-mechanical polisher.
Background technique
Currently, polish unit in existing semiconductor fabrication techniques field and acid tank cleaning processing equipment is separate type,
The wafer of moisture state after polishing needs to be delivered to acid tank cleaning processing equipment by transmission unit, that there are strokes is long,
The shortcomings that low efficiency, complex process, constitutes obstacle to the batch planarization of wafer.Meanwhile existing separating apparatus is unfavorable for
The intellectualized reconstruction of production technology can not plan as a whole the cooperation in treatment process between each equipment；In the gap of different disposal technique
In increase the queue waiting time of wafer, the possibility of pollution for further resulting in wafer improves.And the wafer after polishing can not
It is cleaned at the first time, therefore also needs to increase cleaning process in based CMP apparatus, further reduced the place of wafer
Efficiency is managed, industrialization large-scale production is unfavorable for.
Summary of the invention
The object of the present invention is to provide a kind of chemical-mechanical polisher, it will chemically-mechanicapolish polish and acid tank cleans two
Processing step is completed by one step of equipment.
In order to achieve the above objectives, the present invention provides a kind of chemical-mechanical polishers comprising: multiple rows of multiple polishings are single
Member；The reprinting platform of multiple rows of polishing unit side is set, for placing the wafer after polished wafer and cleaning-drying；Setting
The multiple platforms of an at least row between adjacent two rows of polishing units, after temporarily placing polished wafer and polishing
Wafer；It clears and washes and drying unit with multiple rows of polishing unit disposed in parallel at least one；It is arranged in multiple rows of polishing unit other side
Supply unit, for by polishing after wafer be delivered to cleaning and drying unit side；And the machinery for picking and placing wafer
Hand.
Above-mentioned chemical-mechanical polisher, wherein the chemical-mechanical polisher further includes being used for of being disposed over
The driving mechanism that manipulator is driven.
Above-mentioned chemical-mechanical polisher, wherein the chemical-mechanical polisher further includes for detecting wafer position
The vision positioning device of information and the control system being connect respectively with the vision positioning device and manipulator, for controlling machinery
Hand picks and places wafer according to wafer position information.
Above-mentioned chemical-mechanical polisher, wherein the polishing unit includes: rubbing head, is arranged below rubbing head
Polishing block, the polishing pad, polishing pad trimmer and the polishing fluid conveyer arm that are placed on the polishing block；The polishing pad is repaired
One end of whole device is fixed on the polishing block, and the other end is located above the polishing pad；The polishing fluid conveyer arm setting
Above the polishing pad, for conveying polishing fluid to the polishing pad.
Above-mentioned chemical-mechanical polisher, wherein the polishing unit is at least 2 in total, and every row is provided with identical
The polishing unit of quantity.
Above-mentioned chemical-mechanical polisher, wherein the platform between adjacent two rows of polishing units is arranged in a row, often
The quantity of row's polishing unit and the quantity of every row's platform are equal, and each platform is total to by two polishing units for being located at its two sides
With.
Above-mentioned chemical-mechanical polisher, wherein the platform can direction arranged along move back and forth, to match
The pick-and-place of synthetic circle.
Above-mentioned chemical-mechanical polisher, wherein the supply unit is conveyer structure.
Above-mentioned chemical-mechanical polisher, wherein it is described cleaning and drying unit include from supply unit to reprint platform
What direction was set gradually is used to complete the wafer after polishing multiple groove bodies of wet-chemical cleaning and for the crystalline substance after cleaning
The isopropanol drying device that circle is dried.
Above-mentioned chemical-mechanical polisher, wherein the multiple groove body include the DHF slot set gradually, the first sink,
SC1 slot, the second sink, SC2 slot and third sink；HF and H are contained in the DHF slot2The mixed liquor of O；It is contained in the SC1 slot
It is placed with H2O2、NH4OH and H2The mixed liquor of O；H is contained in the SC2 slot2O2, HCl and H2The mixed liquor of O；First water
Deionized water is contained in slot, the second sink and third sink.
Of the invention is mainly characterized by monolithic chemistry mechanical polishing unit and wet clean process by original separate type
Configuration is changed to be integrated in an equipment, and it is complete that two processing steps of chemical-mechanical planarization and wet-cleaning are reduced to a step
At, may be implemented wafer do into do.
It sums up, the present invention has following technical advantage:
(1) it may include 2 or more (4,6,8,10...) polishing units, improve production capacity and efficiency, be suitble to extensive raw
It produces；
(2) chemically mechanical planarization process is eliminated to simplify to the time of wafer transfer between cleaning process and queuing
Processing step；
(3) wet wafer is directly into the rinse bath for closing on supply unit, because timely cleaning can improve the clear of wafer
Cleanliness；
(4) without the included cleaning after chemical machinery, output is more, and speed is fast, high-quality, reduces equipment cost, integrates
Scheme can also reduce separate chemical CMP apparatus and the occupied Clean room area of wet clean equipment；
(5) transmitting of the wafer between each component part of chemical-mechanical polisher is completed using manipulator, may be implemented
Production mechanization and automation, cooperation vision positioning device can further realize fining production, reach higher production effect
Rate.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of chemical-mechanical polisher of the present invention.
Specific embodiment
Below in conjunction with attached drawing, by specific embodiment, the invention will be further described, these embodiments are merely to illustrate
The present invention is not limiting the scope of the invention.
As shown in Figure 1, being the structural schematic diagram of one embodiment of chemical-mechanical polisher of the present invention, the arrow in figure is indicated
The moving direction of wafer.Chemical-mechanical polisher shown by the embodiment includes: that two rows of totally 6 polishings disposed in parallel are single
3 polishing units 10 are arranged in member 10, every row；The reprinting platform 20 of two rows of polishing 10 sides of unit is set, it is polished for placing
Wafer and cleaning-drying after wafer；3 platforms 30 of a row between two rows of polishing units 10 are set, for temporarily putting
Wafer after setting polished wafer and polishing, each platform 30 are located between 2 polishing units 10 of its two sides, and by this
2 polishing units 10 share；It clears and washes and drying unit with two rows polishing units disposed in parallel one；Setting is single in two rows polishing
The supply unit 40 of first 10 other sides, for the wafer after polishing to be delivered to cleaning and drying unit side；And for taking
The manipulator of wafer is put, to realize transmission of the wafer between each component part of chemical-mechanical polisher of the present invention, manipulator
Setting position can freely be arranged, such as some position for needing mobile wafer can be fixed at, drive can also be passed through
Motivation structure shuttles movement freely between each component part of the embodiment, to realize bigger treatment effeciency and with more spirit
Activity.
In this embodiment, it is the dimensional footprint for reducing chemical-mechanical polisher, improves production of units area
The compact setting of row's platform 30 that industrial output value polishing unit 10 at two rows and is disposed between.To realize same purpose,
It can further expand are as follows: two rows polishing units 10, row's platform 30 and one, which clear, to wash and drying unit is parallel compact sets
It is set to rectangular body region, reprints platform 20 and supply unit 40 is compact ranks in the two sides of the rectangular body region, and reprint 20 He of platform
The length of supply unit 40 is equal to the side length of the rectangular body region corresponding to it.By this arrangement, space utilization can be made
Rate, which is realized, to be maximized, while also can reduce the work load and arrangement difficulty of manipulator.Of course, in order to cleaning and drying
Unit carries out that certain operation sky can be reserved between Maintenance and Repair operation, the cleaning and drying unit and two rows of polishing units 10
Between.
In this embodiment, it in order to improve the processing flux of chemical-mechanical polisher, can be arranged in parallel multiple rows of multiple
Polish unit 10；The polishing unit 10 of identical quantity can be set in every row, between row and row alignment setting, to further increase sky
Between utilization rate；Row parallel with two rows polishing unit 10 or more row can be set between adjacent two rows of polishing units 10
Platform 30, can according to polishing unit 10 treatment effeciency be selected.The treatment effeciency for polishing unit 10 is higher, can be with
Increase the quantity of platform 30, correspondingly to reduce the time that wafer waits in line processing.Similarly, it is thrown to improve chemical machinery
Multiple rows of cleaning and drying unit also can be set in the processing flux of light device, such as can be in the outermost of above-mentioned rectangular body region
Side, which is respectively arranged one and clears, to be washed and drying unit, can also be arranged again between multiple rows of polishing unit 10 according to the actual situation a row or
Multiple rows of cleaning and drying unit.
In order to improve the operating efficiency of manipulator, which further includes being disposed over for machine
The driving mechanism that tool hand is driven.Optionally, which can choose as horizontal translation mechanism, for driving setting to exist
Manipulator elder generation horizontal 360-degree thereon moves freely, determine to after a certain specific location can so that driving manipulator on move down
It is dynamic, to realize the larger range of use of manipulator, and the number of manipulator is reduced in the case where not influencing treatment effeciency as far as possible
Amount.The horizontal translation mechanism can be using the structure similar to driving, maximumlly to reduce the complexity of mechanism.Certainly
Ground, the horizontal displacement mechanism can also be arranged between each section of chemical-mechanical polisher interspersedly to realize identical mesh
's.
In order to avoid the operating error that manipulator is common, above-described embodiment can also be further arranged for detecting wafer position
The vision positioning device of confidence breath larger plays the treatment effeciency of manipulator and avoids to realize the accurate positionin to wafer
It is destroyed caused by wafer due to misoperation.Further, the vision positioning device and manipulator are with a control respectively
System connection, the control system accurately pick and place wafer according to wafer position information for controlling manipulator；Pass through control system and view
The cooperation for feeling positioning device, so that the operation precision of manipulator greatly improves, and then avoids influence of the maloperation to final product quality.
Further, the control system can in chemical-mechanical polisher polishing unit 10, supply unit 40 and cleaning and
Concrete operations parameter in drying unit carries out comprehensively control, such as to the polishing time of polishing unit 10, supply unit 40
The important parameters such as the processing time of transmission speed, cleaning and drying unit carry out comprehensively control, to reduce the waiting of wafer-process
Time improves treatment effeciency and flux.
In a more specific embodiment, the polishing unit 10 includes: rubbing head 11, is arranged in below rubbing head 11
Polishing block 12, the polishing pad being placed on the polishing block 12, polishing pad trimmer and polishing fluid conveyer arm；The polishing pad
One end of trimmer is fixed on the polishing block 12, and the other end is located above the polishing pad；The polishing fluid conveyer arm
It is set to above the polishing pad, for conveying polishing fluid to the polishing pad.To further increase planarization process efficiency,
The polishing unit 10 is at least 2 in total, and parallel alignment is set as multiple rows of, and every row is provided with the polishing unit of identical quantity
10；In the specific implementation can further according to cleaning and drying unit production capacity increase polishing unit 10 quantity (such as 4,6
It is a, 8,10 etc.), realize that polishing unit 10 is matched with cleaning and drying unit production capacity.Platform 30 being capable of side arranged along
To moving back and forth, to polish the position of the rubbing head 11 of unit 10 closer to its two sides, to realize the mesh that cooperation wafer picks and places
And improve planarization efficiency and reduce the waiting time；The quantity of every row's platform 30 polishes the quantity phase of unit 10 with every row
The middle position of two polishing units 10 of its two sides, and each platform are set Deng, the initial position of each platform 30
30 two polishing units 10 by being located at its two sides share, further to simplify the complexity of equipment, very high planarization efficiency.
Supply unit 40 can use conveyer structure, and the wafer after polishing is transported to cleaning from polishing unit 10 to be more convenient for realizing
And drying unit side.
Cleaning and drying unit include from supply unit 40 to reprinting that 20 direction of platform sets gradually for after to polishing
Wafer completes multiple groove bodies of wet-chemical cleaning and the isopropanol drying device 57 for the wafer after cleaning to be dried,
Doing for wafer can be realized after drying.Multiple groove bodies and isopropanol drying device 57 are in several rows of column, and are successively set
It sets in supply unit 40, reprint between platform 20, and be arranged in parallel with multiple rows of polishing unit 10, to realize chemical-mechanical polisher
Compact setting, and convenient for manipulator carry out transfer operation；Simultaneously between multiple groove bodies and groove body and isopropanol drying device
Compact setting between 57, further to reduce the occupied area of chemical-mechanical polisher and be conducive to the operation of manipulator.
Further, chemical-mechanical polisher provided by the present invention can use RCA cleaning process, organic to remove
Skin covering of the surface, particle and metal are stained.RCA cleaning process is to be existed by Kern (Kern) and Bo Dining (Puotinen) et al. nineteen sixty-five
What the laboratory RCA of New Jersey Princeton was initiated, and gain the name therefrom.It is still typically, so far most universal that RCA, which is a kind of,
The wet chemical cleans method used.After using the RCA cleaning process, above-mentioned multiple groove bodies include from supply unit 40 to reprinting
The DHF that 20 direction of platform is set gradually (refers to HF and H2The mixed liquor of O) slot 51, the first sink 52, SC1 (refer to H2O2、NH4OH and H2O's
Alkaline mixed solution) slot 53, the second sink 54, SC2 (refer to H2O2, HCl and H2The acid mixed solution of O) slot 55 and third sink 56.It throws
The cleaning step of wafer after light are as follows: the first step uses HF and H in DHF slot 512The mixed liquor of O cleans wafer, will
The natural oxide film that crystal column surface generates erodes, and removes the metal hydroxides being attached on natural oxide film；Second step exists
It is washed in first sink 52 by deionized water, to remove in first step water soluble compound generated；Third step exists
H is used in SC1 slot 532O2、NH4OH and H2The mixed liquor of O cleans wafer, passes through H2O2Strong oxdiative and NH4OH's is molten
Solution effect makes organic matter contamination become water soluble compound；4th step is washed in the second sink 54 by deionized water；
5th step uses H in SC2 slot 552O2, HCl and H2The mixed liquor of O cleans wafer, extremely strong by acid mixed solution
Oxidisability and complexing generate salt with the pervious metal function of oxygen；6th step is in third sink 56 by deionized water by the
The salt removal generated of five steps, completes the cleaning step of wafer；Wafer after cleaning so pass through isopropanol drying device 57 into
Row drying.In above-mentioned cleaning step, wafer be may be dipped in cleaning solution, and cleaning solution also can be used and elute to it,
It can be the combination of both methods, can be selected according to specific actual cleaning effect.
Polished wafer, which is first placed in, to be reprinted on platform 20, will be wait throw according to the polishing situation of multiple rows of polishing unit 10
The wafer of light, which is temporarily placed on the platform 30 of multiple rows of polishing 10 side of unit, to be waited in line to be polished.Polished unit 10 is thrown
Wafer after light passes through manipulator again and is temporarily placed on platform 30, and then is transported to cleaning and drying by supply unit 40
Unit side.Again by the wafer after polishing successively multiple groove bodies in cleaning and drying unit and isopropanol drying device 57 it
Between shifted and handled, finally by the wafer after drying be placed on reprint platform 20 on wait next step technique.Wafer is in this hair
Transmission between bright each component part of chemical-mechanical polisher can be realized by the crawl of manipulator.
In conclusion chemical-mechanical planarization and wet-cleaning and dry two processing steps are reduced to a step by the present invention
Complete, may be implemented wafer do into do.Without the included cleaning after chemical machinery, output is more, and speed is fast, high-quality,
Equipment cost is reduced, Integrated Solution can also reduce separate chemical CMP apparatus and wet clean equipment is occupied
Clean room area；Chemically mechanical planarization process is eliminated to simplify to the time of wafer transfer between cleaning process and queuing
Processing step.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a kind of chemical-mechanical polisher characterized by comprising multiple rows of multiple polishing units；Setting is single in multiple rows of polishing
The reprinting platform of first side, for placing the wafer after polished wafer and cleaning-drying；Setting is in adjacent two rows of polishing units
Between the multiple platforms of an at least row, for temporarily placing the wafer after polished wafer and polishing；It is single with multiple rows of polishing
Member disposed in parallel at least one, which clears, washes and drying unit；The supply unit of multiple rows of polishing unit other side is set, and being used for will
Wafer after polishing is delivered to cleaning and drying unit side；And the manipulator for picking and placing wafer.
2. chemical-mechanical polisher as described in claim 1, which is characterized in that the chemical-mechanical polisher further includes setting
Set the driving mechanism for being driven to manipulator above.
3. chemical-mechanical polisher as described in claim 1, which is characterized in that the chemical-mechanical polisher further includes using
In the vision positioning device for detecting wafer position information and the control system being connect respectively with the vision positioning device and manipulator
System picks and places wafer according to wafer position information for controlling manipulator.
4. chemical-mechanical polisher as described in claim 1, which is characterized in that the polishing unit includes: rubbing head, sets
Set the polishing block below rubbing head, the polishing pad being placed on the polishing block, polishing pad trimmer and polishing fluid conveying hand
Arm；One end of the polishing pad trimmer is fixed on the polishing block, and the other end is located above the polishing pad；The polishing
Liquid conveyer arm is set to above the polishing pad, for conveying polishing fluid to the polishing pad.
5. chemical-mechanical polisher as described in claim 1, which is characterized in that the polishing unit is at least 2 in total,
Every row is provided with the polishing unit of identical quantity.
6. chemical-mechanical polisher as described in claim 1, which is characterized in that the handling between adjacent two rows of polishing units
Platform is arranged in a row, and the quantity of every row's polishing unit and the quantity of every row's platform are equal, and each platform is by being located at its two sides
Two polishing units shareds.
7. chemical-mechanical polisher as described in claim 1, which is characterized in that the platform being capable of direction arranged along
Move back and forth, to cooperate the pick-and-place of wafer.
8. chemical-mechanical polisher as described in claim 1, which is characterized in that the supply unit is conveyer structure.
9. chemical-mechanical polisher as described in claim 1, which is characterized in that it is described cleaning and drying unit include from defeated
The multiple groove bodies and use for being used to complete the wafer after polishing wet-chemical cleaning for sending unit to set gradually to reprinting platform direction
In the isopropanol drying device that the wafer after cleaning is dried.
10. chemical-mechanical polisher as claimed in claim 9, which is characterized in that the multiple groove body includes setting gradually
DHF slot, the first sink, SC1 slot, the second sink, SC2 slot and third sink；HF and H are contained in the DHF slot2O's is mixed
Close liquid；H is contained in the SC1 slot2O2、NH4OH and H2The mixed liquor of O；H is contained in the SC2 slot2O2, HCl and H2O's
Mixed liquor；Deionized water is contained in first sink, the second sink and third sink.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910031948.6A CN109514421A (en) | 2019-01-14 | 2019-01-14 | A kind of chemical-mechanical polisher |
| CN201910443235.0A CN110039441A (en) | 2019-01-14 | 2019-05-24 | A kind of based CMP apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910031948.6A CN109514421A (en) | 2019-01-14 | 2019-01-14 | A kind of chemical-mechanical polisher |
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| Publication Number | Publication Date |
|---|---|
| CN109514421A true CN109514421A (en) | 2019-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910031948.6A Pending CN109514421A (en) | 2019-01-14 | 2019-01-14 | A kind of chemical-mechanical polisher |
| CN201910443235.0A Pending CN110039441A (en) | 2019-01-14 | 2019-05-24 | A kind of based CMP apparatus |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910443235.0A Pending CN110039441A (en) | 2019-01-14 | 2019-05-24 | A kind of based CMP apparatus |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110815035A (en) * | 2019-11-14 | 2020-02-21 | 杭州众硅电子科技有限公司 | Chemical mechanical planarization equipment combining grinding and single-wafer cleaning module |
| WO2020057330A1 (en) * | 2018-09-20 | 2020-03-26 | 杭州众硅电子科技有限公司 | Polishing and loading/unloading component module |
| CN110962022A (en) * | 2019-12-31 | 2020-04-07 | 浙江芯晖装备技术有限公司 | Polishing equipment |
| CN111524833A (en) * | 2020-04-28 | 2020-08-11 | 华海清科股份有限公司 | Chemical mechanical polishing system and chemical mechanical polishing method |
| WO2023036011A1 (en) * | 2021-09-07 | 2023-03-16 | 杭州众硅电子科技有限公司 | Wafer polishing system |
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| US5679055A (en) * | 1996-05-31 | 1997-10-21 | Memc Electronic Materials, Inc. | Automated wafer lapping system |
| CN201046544Y (en) * | 2007-04-03 | 2008-04-16 | 中芯国际集成电路制造(上海)有限公司 | Rinsing apparatus for chemical machinery polisher |
| CN103252705A (en) * | 2013-05-15 | 2013-08-21 | 清华大学 | Chemical mechanical polishing device |
| CN206105604U (en) * | 2016-09-14 | 2017-04-19 | 天津华海清科机电科技有限公司 | Chemical mechanical polishing system |
| JP6578317B2 (en) * | 2017-05-01 | 2019-09-18 | 株式会社荏原製作所 | Substrate processing apparatus and control method thereof |
| CN109015314A (en) * | 2018-09-07 | 2018-12-18 | 杭州众硅电子科技有限公司 | A kind of based CMP apparatus |
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- 2019-01-14 CN CN201910031948.6A patent/CN109514421A/en active Pending
- 2019-05-24 CN CN201910443235.0A patent/CN110039441A/en active Pending
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| WO2020057330A1 (en) * | 2018-09-20 | 2020-03-26 | 杭州众硅电子科技有限公司 | Polishing and loading/unloading component module |
| CN110815035A (en) * | 2019-11-14 | 2020-02-21 | 杭州众硅电子科技有限公司 | Chemical mechanical planarization equipment combining grinding and single-wafer cleaning module |
| CN110962022A (en) * | 2019-12-31 | 2020-04-07 | 浙江芯晖装备技术有限公司 | Polishing equipment |
| CN111524833A (en) * | 2020-04-28 | 2020-08-11 | 华海清科股份有限公司 | Chemical mechanical polishing system and chemical mechanical polishing method |
| CN111524833B (en) * | 2020-04-28 | 2023-04-21 | 华海清科股份有限公司 | Chemical mechanical polishing system and chemical mechanical polishing method |
| WO2023036011A1 (en) * | 2021-09-07 | 2023-03-16 | 杭州众硅电子科技有限公司 | Wafer polishing system |
| WO2023125916A1 (en) * | 2021-12-31 | 2023-07-06 | 杭州众硅电子科技有限公司 | Wafer polishing system and wafer transfer method |
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