CN109509705A - Low barrier height Schottky diode and preparation method thereof - Google Patents
Low barrier height Schottky diode and preparation method thereof Download PDFInfo
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- CN109509705A CN109509705A CN201811243153.3A CN201811243153A CN109509705A CN 109509705 A CN109509705 A CN 109509705A CN 201811243153 A CN201811243153 A CN 201811243153A CN 109509705 A CN109509705 A CN 109509705A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 126
- 229910052751 metal Inorganic materials 0.000 claims abstract description 113
- 239000002184 metal Substances 0.000 claims abstract description 113
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 85
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 49
- 238000003682 fluorination reaction Methods 0.000 claims abstract description 21
- 229910052732 germanium Inorganic materials 0.000 claims description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 18
- 239000010936 titanium Substances 0.000 claims description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 5
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 229910018503 SF6 Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 21
- 230000002687 intercalation Effects 0.000 abstract description 4
- 238000009830 intercalation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 97
- 239000010408 film Substances 0.000 description 45
- 239000000463 material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 150000001336 alkenes Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
Abstract
The present invention provides a kind of low barrier height Schottky diode and preparation method thereof, includes the following steps: 1) to provide a substrate；2) graphene film is formed in the surface of substrate；3) fluorination treatment is carried out to form fluorinated graphene insulating layer to graphene film；4) in fluorinated graphene surface of insulating layer deposit metal electrodes；5) the fluorinated graphene insulating layer except schottky junction region is removed；6) Ohm contact electrode is formed in exposed substrate surface.For the present invention using fluorinated graphene insulating layer as the intercalation between metal electrode and substrate, fluorinated graphene insulating layer will not generate MIGS pinning effect in the substrate；Fluorinated graphene insulating layer can form the high Schottky junction of uniformity with diffusing into one another between barrier metal electrode and substrate；Metal electrode can be substantially reduced to the fermi level pinning effect of substrate, to reduce the Schottky junction barrier height formed between substrate and metal electrode in Schottky diode.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of low barrier height Schottky diode and its preparation
Method.
Background technique
With the rapid development of semiconductor industry, finds new material and substitute traditional silica-base material and have become universal to become
Gesture.Currently, germanium is because of its high carrier mobility, and and semiconductor technology compatibility, it is considered to be most potential semiconductor
Material.Schottky barrier diode (SBD) due to its technology importance, in material, device physics, design and application aspect
The extensive research of existing many decades.It is well known that the Performance And Reliability of SBD is by between deposited metal and semiconductor surface
Interface quality extreme influence.The major parameter of current control in metal-semiconductor (M-S) structure is mixing for semiconductor
Schottky barrier height (SBH) at miscellaneous concentration Nd and M-S structural interface.SBH value depends on the work function of metal.For Ge
(germanium), neutral charge energy level (CNL) just on valence band, lead to Fermi level pinning.Although pinning reason is not yet
It is understood completely, is mainly considered the effect of the gap state (MIGS) of metal inducement, that is, the free electron wave letter in metal
Number enters semiconductor band gap induced gap acceptor or donor sample state.The presence of fermi level pinning, so that Schottky diode
Barrier height dramatically increase, the barrier height and metal work function of Schottky diode are relatively independent, to influence Schottky
The performance of diode.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of low barrier height Schottky two
Pole pipe and preparation method thereof for solving Schottky diode in the prior art there are Fermi level pinning effect, from
And make the barrier height of Schottky diode higher, and then the problem of the performance of influence Schottky diode.
In order to achieve the above objects and other related objects, the present invention provides a kind of system of low barrier height Schottky diode
The preparation method of Preparation Method, the low barrier height Schottky diode includes the following steps:
1) substrate is provided；
2) surface of Yu Suoshu substrate forms graphene film；
3) fluorination treatment is carried out to form fluorinated graphene insulating layer to the graphene film；
4) Yu Suoshu fluorinated graphene surface of insulating layer deposit metal electrodes, in the metal electrode and the substrate it
Between form schottky junction；
5) the fluorinated graphene insulating layer except the schottky junction region is removed, and exposes the base
Bottom；
6) Ohm contact electrode is formed in the exposed substrate surface.
Optionally, the substrate provided in step 1) includes germanium substrate.
Optionally, the germanium substrate includes N-type germanium substrate.
Optionally, in step 2), the surface in situ using chemical vapour deposition technique in the substrate grows the graphene
Film.
Optionally, in step 3), plasma fluorination processing is carried out to the graphene film using sulfur hexafluoride gas,
So that the graphene film is all converted to fluorinated graphene insulating layer.
Optionally, in step 5), the schottky junction region is removed using inductively coupled plasma etching technique
Except the fluorinated graphene insulating layer.
The present invention also provides a kind of low barrier height Schottky diode, the low barrier height Schottky diode packet
It includes:
Substrate；
Metal electrode is located in the substrate, to form schottky junction between the metal electrode and the substrate；
Fluorinated graphene insulating layer, positioned at the surface of the substrate, and between the metal electrode and the substrate；
Ohm contact electrode, the surface of the substrate except fluorinated graphene insulating layer region.
Optionally, the substrate includes germanium substrate.
Optionally, the germanium substrate includes N-type germanium substrate.
Optionally, the metal electrode includes titanium/gold electrode.
As described above, a kind of low barrier height Schottky diode and preparation method thereof of the invention, has beneficial below
Effect:
The preparation method of low barrier height Schottky diode of the invention is by carrying out fluorination treatment for graphene film
Metal electrode is re-formed after forming fluorinated graphene insulating layer, using fluorinated graphene insulating layer as metal electrode and substrate
Between intercalation, fluorinated graphene insulating layer will not generate MIGS (metal inducement band gap states) pinning effect in the substrate；Together
When, fluorinated graphene insulating layer it is high can to form uniformity with diffusing into one another between barrier metal electrode and substrate
Schottky junction；Due to the presence of fluorinated graphene insulating layer between metal electrode and substrate, metal electrode can be substantially reduced
To the fermi level pinning effect of substrate, to reduce the Xiao Te formed between substrate and metal electrode in Schottky diode
Base junction barrier height；
Low barrier height Schottky diode of the present invention between metal electrode and substrate by being arranged fluorination stone
Black alkene insulating layer, fluorinated graphene insulating layer will not generate MIGS (metal inducement band gap states) pinning effect in the substrate；Together
When, fluorinated graphene insulating layer it is high can to form uniformity with diffusing into one another between barrier metal electrode and substrate
Schottky junction；Due to the presence of fluorinated graphene insulating layer between metal electrode and substrate, metal electrode can be substantially reduced
To the fermi level pinning effect of substrate, to reduce the Xiao Te formed between substrate and metal electrode in Schottky diode
Base junction barrier height.
Detailed description of the invention
Fig. 1 is shown as the process of the preparation method of the low barrier height Schottky diode provided in the embodiment of the present invention one
Figure.
Fig. 2 is shown as the preparation method step 1) of the low barrier height Schottky diode provided in the embodiment of the present invention one
The schematic perspective view of resulting structures.
Fig. 3 is shown as the preparation method step 2) of the low barrier height Schottky diode provided in the embodiment of the present invention one
The schematic perspective view of resulting structures.
Fig. 4 is shown as the preparation method step 3) of the low barrier height Schottky diode provided in the embodiment of the present invention one
The schematic perspective view of resulting structures.
Fig. 5 is shown as the preparation method step 4) of the low barrier height Schottky diode provided in the embodiment of the present invention one
The schematic perspective view of resulting structures.
Fig. 6 is shown as the preparation method step 5) of the low barrier height Schottky diode provided in the embodiment of the present invention one
The schematic perspective view of resulting structures.
Fig. 7 is shown as Fig. 6 along the cross section structure schematic diagram in the direction AA.
Fig. 8 is shown as the preparation method step 6) of the low barrier height Schottky diode provided in the embodiment of the present invention one
The schematic perspective view of resulting structures.
Fig. 9 is shown as Fig. 8 along the cross section structure schematic diagram in the direction AA.
Component label instructions
10 substrates
11 graphene films
12 fluorinated graphene films
13 metal electrodes
14 Ohm contact electrodes
S1~S6 step
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also be by addition different specific
Embodiment is embodied or practiced, and the various details in this specification can also not carried on the back based on different viewpoints and application
From carrying out various modifications or alterations under spirit of the invention.
Fig. 1 is please referred to Fig. 9.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only show in diagram with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 1, the present invention provides a kind of preparation method of low barrier height Schottky diode, the low potential barrier is high
The preparation method of degree Schottky diode includes the following steps:
1) substrate is provided；
2) surface of Yu Suoshu substrate forms graphene film；
3) fluorination treatment is carried out to form fluorinated graphene insulating layer to the graphene film；
4) Yu Suoshu fluorinated graphene surface of insulating layer deposit metal electrodes, in the metal electrode and the substrate it
Between form schottky junction；
5) the fluorinated graphene insulating layer except the schottky junction region is removed, and exposes the base
Bottom；
6) Ohm contact electrode is formed in the exposed substrate surface.
In step 1), S1 step and Fig. 2 in Fig. 1 are please referred to, a substrate 10 is provided.
As an example, the substrate 10 may include any one neutral charge energy level just in the substrate of valence band；It is preferred that
Ground, the substrate 10 may include but be not limited only to germanium (Ge) substrate；It is further preferable that the substrate 10 is wrapped in the present embodiment
Include N-type germanium substrate.
In step 2), S2 step and Fig. 3 in Fig. 1 are please referred to, the surface of Yu Suoshu substrate 10 forms graphene film
11。
Institute is grown in the surface in situ of the substrate 10 as an example, can use but be not limited only to chemical vapour deposition technique
State graphene film 11.
As an example, the graphene film 11 can be monoatomic-layer graphene film, or polyatom layer stone
Black alkene film.Preferably, in the present embodiment, the graphene film 11 be 1~3 atomic layer level thickness graphene film, 1~3
The fluorinated graphene insulating layer that the graphene film of atomic layer level thickness may insure can play barrier metal electrode and institute
Diffusing into one another between substrate 10 is stated, the high Schottky junction of uniformity can be formed, metal electrode pair can be substantially reduced
The fermi level pinning effect of the substrate 10, to reduce substrate 10 described in Schottky diode and between metal electrode
The effect of the Schottky junction barrier height of formation.
In step 3), please refer to S3 step and Fig. 4 in Fig. 1, to the graphene film 11 carry out fluorination treatment with
Form fluorinated graphene insulating layer 12.
As an example, being carried out at fluorination after plasma being formed using fluoro-gas to the graphene film 11
Reason, it is preferable that in the present embodiment, using sulfur hexafluoride (SF6) gas to the graphene film 11 carry out plasma fluorination
Processing.
As an example, when the graphene film 11 is monoatomic-layer graphene film, to the graphene film 11
After carrying out fluorination treatment, the graphene film 11 is all converted to the fluorinated graphene insulating layer 12；And work as the graphite
When alkene film 11 is polyatom layer graphene film, during carrying out fluorination treatment to the graphene film 11, only
Top layer atomic layer graphene is converted into the fluorinated graphene insulating layer 12, and other graphene films 11 can't be by fluorine
Change, but still keep graphene film state, i.e., after carrying out fluorination treatment to the graphene film 11, only described in part
Graphene film 11 is converted into the fluorinated graphene insulating layer 12, and also that is, after fluorination treatment, the fluorinated graphene is exhausted
The graphene film 11 is also remained between edge layer 12 and the substrate 10.But preferably, in the present embodiment, to the stone
After black alkene film 11 carries out fluorination treatment, the graphene film 11 is all converted to the fluorinated graphene insulating layer 12, this
Sample may insure that the fluorinated graphene insulating layer 12 can stop the metal electrode being subsequently formed and the base to the maximum extent
Diffusing into one another between bottom 10, to reduce the effect of the fermi level pinning between metal electrode and the substrate 10 to the maximum extent
It answers.
In step 4), S4 step and Fig. 5 in Fig. 1,12 surface of Yu Suoshu fluorinated graphene insulating layer deposition are please referred to
Metal electrode 13, to form schottky junction between the metal electrode 13 and the substrate 10.
The metal electrode 13 is formed as an example, can use but be not limited only to electron beam evaporation method.Certainly, at other
In example, a kind of any other deposition method can also be used to form the metal electrode 13.Specifically, can be prior to described
12 surface of fluorinated graphene insulating layer forms a Patterned masking layer, is formed with described in defining in the Patterned masking layer
The position of metal electrode 13 and the opening of shape, then 12 surface of fluorinated graphene insulating layer in the opening
Form the metal electrode 13.
It certainly, in other examples, can be first using techniques such as electron beam evaporation methods in the fluorinated graphene insulating layer
12 surfaces form one layer of metal electrode material layer, and a layer pattern exposure mask is then formed on the metal electrode material layer
Layer is formed with the figure of the position and shape that define the metal electrode 13 in the Patterned masking layer, finally foundation again
The Patterned masking layer etches the metal electrode material layer and obtains the metal electrode 13.
As an example, the metal electrode 13 includes titanium (Ti)/golden (Au) electrode, i.e., the described metal electrode 13 includes titanium
Belong to layer and gold metal layer, the titanium coating are located at the surface of the fluorinated graphene insulating layer 12, the gold metal layer is located at
Surface of the titanium coating far from the fluorinated graphene insulating layer 12.Certainly, in other examples, the metal electrode
13 or titanium electrode, golden metal electrode, copper metal electrode or nickel metal electrode etc..
As an example, the concrete shape of the metal electrode 13 can be set according to actual needs, do not limit herein
System.
In step 5), the S5 step and Fig. 6 to Fig. 7 in Fig. 1 are please referred to, is removed except the schottky junction region
The fluorinated graphene insulating layer 12, and expose the substrate 10.
As an example, the schottky junction location can be removed using inductively coupled plasma etching (ICP) technique
The fluorinated graphene insulating layer 12 except domain.Specifically, can be etching barrier layer to institute according to the metal electrode 13
It states fluorinated graphene insulating layer 12 to perform etching, after etching, the only described fluorinated graphene insulating layer 12 is located at the metal electricity
Part immediately below pole 13 has been retained, the fluorinated graphene insulating layer being exposed to except the metal electrode 13
12 are removed.Certainly, in order to be caused during removing fluorinated graphene insulating layer 12 to the metal electrode 13
Damage first can also form protective layer on the surface of the metal electrode 13, then carry out to the fluorinated graphene insulating layer 12
Etching removal.
It should be noted that in this step, the fluorinated graphene insulation being exposed to except the metal electrode 13
Layer 12 is entirely removed；And when there is the graphene film 11 below the fluorinated graphene insulating layer 12, it is located at described
The graphene film 11 except metal electrode 13 is similarly removed together, to expose the substrate 10 after etching.
In step 6), the S6 step and Fig. 8 to Fig. 9 in Fig. 1 are please referred to, forms Europe in exposed 10 surface of the substrate
Nurse contacts electrode 14.
As an example, can be by depositing to form broad-area electrode as described ohm on exposed 10 surface of the substrate
Contact electrode 14.The setting when area of the Ohm contact electrode 14 can carry out according to actual needs, for example, described ohm
Contact electrode 14 can cover the substrate 10 is formed with the surface of the Ohm contact electrode 14 5/1~1/2 etc..
As an example, the Ohm contact electrode 14 may include metal electrode, the material of the Ohm contact electrode 14
It can be identical as the material of the metal electrode 13.
The preparation method of low barrier height Schottky diode of the invention is by carrying out fluorine for the graphene film 11
Change after processing forms fluorinated graphene insulating layer 12 and re-form the metal electrode 13, utilizes the fluorinated graphene insulating layer
12 as the intercalation between the metal electrode 13 and the substrate 10, and the fluorinated graphene insulating layer 12 will not be in substrate
Middle generation MIGS (metal inducement band gap states) pinning effect；Meanwhile the fluorinated graphene insulating layer 12 can stop the gold
Belong to diffusing into one another between electrode 13 and the substrate 10, the high Schottky junction of uniformity can be formed；The metal electricity
Due to the presence of the fluorinated graphene insulating layer 12 between pole 13 and the substrate 10, the metal electricity can be substantially reduced
Pole 13 is to the fermi level pinning effect of the substrate 10, to reduce substrate 10 described in Schottky diode and the gold
Belong to the Schottky junction barrier height formed between electrode 13.
Embodiment two
Incorporated by reference to Fig. 2 to Fig. 7 with continued reference to Fig. 8 to Fig. 9, the present invention also provides a kind of two poles of low barrier height Schottky
Pipe, the low barrier height Schottky diode include:
Substrate 10；
Metal electrode 13, the metal electrode 13 are located in the substrate 10, in the metal electrode 13 and the base
Schottky junction is formed between bottom 10；
Fluorinated graphene insulating layer 12, the fluorinated graphene insulating layer 12 are located at the surface of the substrate 10, and are located at
Between the metal electrode 13 and the substrate 10；
Ohm contact electrode 14, the Ohm contact electrode 14 be located at 12 region of fluorinated graphene insulating layer it
The surface of the outer substrate 10.
As an example, the substrate 10 may include any one neutral charge energy level just in the substrate of valence band；It is preferred that
Ground, the substrate 10 may include but be not limited only to germanium (Ge) substrate；It is further preferable that the substrate 10 is wrapped in the present embodiment
Include N-type germanium substrate.
As an example, the fluorinated graphene insulating layer 12 is to grow the graphite for the surface in situ of the substrate 10
Alkene film 11 carries out structure obtained from fluorination treatment, specifically, can be formed after plasma using fluoro-gas to described
Graphene film 11 carries out fluorination treatment and obtains the fluorinated graphene insulating layer 12, it is preferable that in the present embodiment, using six
Sulfur fluoride (SF6) gas carries out plasma fluorination to the graphene film 11 and handle to obtain the fluorinated graphene insulating
Layer 12.
As an example, the metal electrode 13 includes titanium (Ti)/golden (Au) electrode, i.e., the described metal electrode 13 includes titanium
Belong to layer and gold metal layer, the titanium coating are located at the surface of the fluorinated graphene insulating layer 12, the gold metal layer is located at
Surface of the titanium coating far from the fluorinated graphene insulating layer 12.Certainly, in other examples, the metal electrode
13 or titanium electrode, golden metal electrode, copper metal electrode or nickel metal electrode etc..
As an example, the concrete shape of the metal electrode 13 can be set according to actual needs, do not limit herein
System.
As an example, can be by depositing to form broad-area electrode as described ohm on exposed 10 surface of the substrate
Contact electrode 14.The setting when area of the Ohm contact electrode 14 can carry out according to actual needs, for example, described ohm
Contact electrode 14 can cover the substrate 10 is formed with the surface of the Ohm contact electrode 14 5/1~1/2 etc..
As an example, the Ohm contact electrode 14 may include metal electrode, the material of the Ohm contact electrode 14
It can be identical as the material of the metal electrode 13.
As an example, the low barrier height Schottky diode further includes graphene film, the graphene film position
Between the fluorinated graphene insulating layer 12 and the substrate 10.
Low barrier height Schottky diode of the present invention by the metal electrode 13 and the substrate 10 it
Between the fluorinated graphene insulating layer 12 is set, the fluorinated graphene insulating layer 12 will not generate in the substrate 10
MIGS (metal inducement band gap states) pinning effect；Meanwhile the fluorinated graphene insulating layer 12 can stop the metal electrode
Diffusing into one another between 13 and the substrate 10 can form the high Schottky junction of uniformity；The metal electrode 13 with
Due to the presence of the fluorinated graphene insulating layer 12 between the substrate 10, it is right that the metal electrode 13 can be substantially reduced
The fermi level pinning effect of the substrate 10, to reduce substrate 10 described in Schottky diode and the metal electrode
The Schottky junction barrier height formed between 13.
In conclusion low barrier height Schottky diode of the present invention and preparation method thereof, the low barrier height Xiao Te
The preparation method of based diode includes the following steps: 1) to provide a substrate；2) it is thin to form graphene for the surface of Yu Suoshu substrate
Film；3) fluorination treatment is carried out to form fluorinated graphene insulating layer to the graphene film；4) Yu Suoshu fluorinated graphene is exhausted
Edge layer surface deposit metal electrodes, to form schottky junction between the metal electrode and the substrate；5) Xiao is removed
The fluorinated graphene insulating layer except special base junction region, and expose the substrate；6) in the exposed substrate
Surface forms Ohm contact electrode.The preparation method of low barrier height Schottky diode of the invention passes through graphene is thin
Film carry out fluorination treatment formed fluorinated graphene insulating layer after re-form metal electrode, using fluorinated graphene insulating layer as
Intercalation between metal electrode and substrate, fluorinated graphene insulating layer will not generate MIGS (metal inducement band gap in the substrate
State) pinning effect；Meanwhile fluorinated graphene insulating layer can be with diffusing into one another between barrier metal electrode and substrate, it can be with shape
At the high Schottky junction of uniformity；Due to the presence of fluorinated graphene insulating layer, Ke Yi great between metal electrode and substrate
The big metal electrode that reduces is to the fermi level pinning effect of substrate, to reduce substrate and metal electrode in Schottky diode
Between the Schottky junction barrier height that is formed；Low barrier height Schottky diode of the present invention passes through in metal electrode
Fluorinated graphene insulating layer is set between substrate, and fluorinated graphene insulating layer will not generate MIGS (metal inducement in the substrate
Band gap states) pinning effect；Meanwhile fluorinated graphene insulating layer can be with diffusing into one another between barrier metal electrode and substrate, it can
To form the high Schottky junction of uniformity；It, can due to the presence of fluorinated graphene insulating layer between metal electrode and substrate
To substantially reduce metal electrode to the fermi level pinning effect of substrate, to reduce substrate and metal in Schottky diode
The Schottky junction barrier height formed between electrode.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, those of ordinary skill in the art institute without departing from the spirit and technical ideas disclosed in the present invention such as
All equivalent modifications or change completed, should be covered by the claims of the present invention.
Claims (10)
1. a kind of preparation method of low barrier height Schottky diode, which is characterized in that the low barrier height Schottky two
The preparation method of pole pipe includes the following steps:
1) substrate is provided；
2) surface of Yu Suoshu substrate forms graphene film；
3) fluorination treatment is carried out to form fluorinated graphene insulating layer to the graphene film；
4) Yu Suoshu fluorinated graphene surface of insulating layer deposit metal electrodes, with the shape between the metal electrode and the substrate
At schottky junction；
5) the fluorinated graphene insulating layer except the schottky junction region is removed, and exposes the substrate；
6) Ohm contact electrode is formed in the exposed substrate surface.
2. the preparation method of low barrier height Schottky diode according to claim 1, which is characterized in that in step 1)
The substrate provided includes germanium substrate.
3. the preparation method of low barrier height Schottky diode according to claim 2, which is characterized in that the germanium base
Bottom includes N-type germanium substrate.
4. the preparation method of low barrier height Schottky diode according to claim 1, which is characterized in that step 2)
In, the surface in situ using chemical vapour deposition technique in the substrate grows the graphene film.
5. the preparation method of low barrier height Schottky diode according to claim 1, which is characterized in that step 3)
In, plasma fluorination processing is carried out to the graphene film using sulfur hexafluoride gas, so that the graphene film
All be converted to fluorinated graphene insulating layer.
6. the preparation method of low barrier height Schottky diode according to claim 1, which is characterized in that step 5)
In, it is exhausted that the fluorinated graphene except the schottky junction region is removed using inductively coupled plasma etching technique
Edge layer.
7. a kind of low barrier height Schottky diode, which is characterized in that the low barrier height Schottky diode includes:
Substrate；
Metal electrode is located in the substrate, to form schottky junction between the metal electrode and the substrate；
Fluorinated graphene insulating layer, positioned at the surface of the substrate, and between the metal electrode and the substrate；
Ohm contact electrode, the surface of the substrate except fluorinated graphene insulating layer region.
8. low barrier height Schottky diode according to claim 7, which is characterized in that the substrate includes germanium base
Bottom.
9. low barrier height Schottky diode according to claim 8, which is characterized in that the germanium substrate includes N-type
Germanium substrate.
10. low barrier height Schottky diode according to claim 7, which is characterized in that the metal electrode includes
Titanium/gold electrode.
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