CN109494281B - PID-resistant device for solar cell - Google Patents
PID-resistant device for solar cell Download PDFInfo
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- CN109494281B CN109494281B CN201811468764.8A CN201811468764A CN109494281B CN 109494281 B CN109494281 B CN 109494281B CN 201811468764 A CN201811468764 A CN 201811468764A CN 109494281 B CN109494281 B CN 109494281B
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- adjusting
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- 239000007789 gas Substances 0.000 claims abstract description 126
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 114
- 238000002156 mixing Methods 0.000 claims abstract description 85
- 239000001301 oxygen Substances 0.000 claims abstract description 75
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 75
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 57
- 238000009423 ventilation Methods 0.000 claims abstract description 17
- 238000005192 partition Methods 0.000 claims description 102
- 238000007789 sealing Methods 0.000 claims description 40
- 238000000265 homogenisation Methods 0.000 claims description 24
- 230000001105 regulatory effect Effects 0.000 claims description 19
- 238000009434 installation Methods 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 24
- 229910052710 silicon Inorganic materials 0.000 abstract description 24
- 239000010703 silicon Substances 0.000 abstract description 24
- 235000012431 wafers Nutrition 0.000 abstract description 24
- 238000000034 method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 25
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar cell PID-resistant device which can avoid gas cross-ventilation and ensure that mixed gas is uniformly distributed around the surface of a silicon wafer. The PID resistant device of the solar cell comprises a unidirectional mixing device for nitrogen and oxygen, a double-oxygen generator, a gas mixing and homogenizing device and a gas pipe; the nitrogen and oxygen unidirectional mixing device is communicated with an air inlet of the double-oxygen generator; the gas mixing and homogenizing device is communicated with the gas outlet of the dual-oxygen generator through a gas pipe. The PID resistant device of the solar cell can effectively avoid the backflow and series flow of the gas; meanwhile, the mixed gas can be ensured to uniformly cover the periphery of the surface of the silicon wafer, and the method is applicable to silicon wafers with different lengths; can effectively reduce the production cost.
Description
Technical Field
The invention relates to the field of PID resistance of solar cells, in particular to a PID resistance device of a solar cell.
Background
It is well known that: the PID effect of solar cells is fully known by the english language: potential Induced Degradation, i.e. potential induced decay. In 2005, sunPower corporation in united states first found and proposed the PID effect, which means that the component works at high voltage for a long time, there is leakage current between cover glass, packaging material and frame, and a large amount of charges are accumulated on the surface of the battery piece, so that the passivation effect of the surface of the battery piece is deteriorated, and the filling factor, short-circuit current and open-circuit voltage are reduced, so that the performance of the component is lower than the design standard, but the attenuation is reversible.
Therefore, the solar panel needs to be subjected to PID resistance treatment, so that the PID phenomenon of the solar panel is avoided; the existing PID-resistant equipment for the solar cell panel needs to mix oxygen and nitrogen and then produce ozone through an ozone generator, and the mixed gas of the ozone, the oxygen and the nitrogen is covered on the surface of a silicon wafer to ensure that a high-purity compact silicon dioxide layer is formed on the surface of the silicon wafer, and the thickness is approximately 10-20nm, so that the potential induction effect caused by sodium ions generated by glass in a cell component is solved.
The existing solar cell PID-resistant device is easy to have the following problems:
1. the flow of nitrogen and oxygen can not be adjusted in real time by the existing nitrogen and oxygen mixing device, and meanwhile, the cross gas of oxygen and nitrogen can not be prevented, and meanwhile, the backflow phenomenon is easy to occur.
2. The mixed gas is directly introduced to the surface of the silicon wafer, so that the gas contacted with the surface of the silicon wafer is uneven, and the surface of the silicon wafer cannot be ensured to form a high-purity compact silicon dioxide layer.
Disclosure of Invention
The technical problem to be solved by the invention is to provide the PID resistant device for the solar cell, which can avoid gas cross-ventilation and ensure that mixed gas is uniformly distributed around the surface of the silicon wafer.
The technical scheme adopted for solving the technical problems is as follows: the PID resistant device of the solar cell comprises a unidirectional mixing device for nitrogen and oxygen, a double-oxygen generator, a gas mixing and homogenizing device and a gas pipe;
the nitrogen and oxygen unidirectional mixing device is communicated with an air inlet of the double-oxygen generator; the gas mixing and homogenizing device is communicated with the gas outlet of the dual-oxygen generator through a gas pipe;
the unidirectional nitrogen and oxygen mixing device comprises a gas mixing body; the gas mixing body is provided with an inner cavity with two open ends;
one end of the gas mixing body is provided with a first sealing plate, and the other end of the gas mixing body is provided with a second sealing plate; the upper part of the cavity of the gas mixing body is provided with a first horizontal partition plate, and the lower part of the cavity of the gas mixing body is provided with a second horizontal partition plate; an oxygen inlet cavity is formed between the first horizontal partition plate and the top of the gas mixing body cavity; a nitrogen inlet cavity is formed between the two horizontal partition plates and the bottom of the gas mixing body cavity;
the first sealing plate is provided with a nitrogen inlet pipe communicated with the nitrogen inlet cavity, and the nitrogen inlet pipe is provided with a first one-way valve and a first flow regulating valve;
an oxygen inlet pipe communicated with the oxygen inlet cavity is arranged on the upper surface of the gas mixing body; the oxygen inlet pipe is provided with a second one-way valve and a second flow regulating valve;
a first ventilation hole is formed in the first horizontal partition plate; the lower surface of the first horizontal partition plate is provided with first vertical partition plates which are uniformly distributed along the transverse direction; a second ventilation opening is formed in the second horizontal partition plate; the upper surface of the second horizontal partition plate is provided with second vertical partition plates which are uniformly distributed along the transverse direction;
the second vertical partition plates on the second horizontal partition plates are positioned right below the gaps between two adjacent first vertical partition plates on the first horizontal partition plates;
an air outlet nozzle is arranged on the second sealing plate; the air outlet nozzle is connected with an air distribution cylinder; one end of the air distribution cylinder is communicated with the air outlet nozzle, and the other end of the air distribution cylinder is provided with a sealing plate; an air distribution plate is arranged in the air distribution cylinder; the sealing plate is provided with an air outlet pipe communicated with the air distribution cylinder; the air outlet pipe is provided with a third one-way valve and a third flow regulating valve;
the gas mixing and homogenizing device comprises a homogenizing main shell, a homogenizing area adjusting body and a flow dividing device; the homogenizing main shell is provided with an inner cavity with an opening at the lower part, and an air inlet pipe is arranged at the top of the homogenizing main shell; the lower edge of the homogenization main shell is provided with a flange;
the upper part of the inner cavity of the homogenization main shell is an inverted conical cavity, and the lower part is a rectangular cavity; at least two layers of first flow equalizing plates are arranged in the inverted cone-shaped cavity; each layer of first flow equalizing plates comprises at least two first flow equalizing plates and is uniformly distributed along the transverse direction; the adjacent two layers of the first flow equalizing plates are alternately distributed, namely, a gap between the adjacent two layers of the first flow equalizing plates on the upper layer is positioned right above the first flow equalizing plates on the lower layer;
at least two layers of second flow equalizing plates are arranged in the rectangular cavity; each layer of second flow equalizing plates comprises at least two second flow equalizing plates and is uniformly distributed along the transverse direction; the adjacent two layers of second flow equalizing plates are alternately distributed, namely, a gap between the adjacent two second flow equalizing plates on the upper layer is positioned right above the second flow equalizing plate on the lower layer;
the central position of the homogenizing region adjusting body is provided with a mounting through cavity; two ends of the homogenizing region adjusting body are provided with adjusting cavities; a vent pipe is arranged above the adjusting cavity;
the homogenizing region adjusting body is sleeved on the homogenizing main shell, and the homogenizing main shell penetrates through the mounting through cavity; the installation through cavity is matched with the lower end of the homogenization main shell;
the end face and the lower surface of the adjusting cavity are provided with openings, and one end of the adjusting cavity is provided with a side sealing plate; at least two layers of transverse flow equalizing plates are arranged in the adjusting cavity; a transverse screw rod is arranged at the central position of the adjusting cavity;
the side face sealing plate is provided with a driving motor for driving the screw rod to rotate; a homogenizing adjusting plate is slidably arranged in the adjusting cavity; the homogenizing adjusting plate is provided with a perforation matched with the flow equalizing plate; the flow equalizing plate passes through the homogenizing adjusting plate, and the screw rod passes through the homogenizing adjusting plate and is in threaded fit with the homogenizing adjusting plate;
the air pipe is communicated with the flow dividing device through an air guide pipe, and the air inlet pipe is communicated with the flow dividing device; an electromagnetic valve is arranged on the air duct between the air duct and the flow dividing device;
the flow dividing device is communicated with the air outlet of the dual-oxygen generator through an air pipe; the air outlet pipe is communicated with the air inlet of the dual-oxygen generator.
Further, two sides of the lower end of the homogenizing adjusting plate are provided with convex blocks; a transverse chute matched with the convex block is arranged above and below the side wall of the adjusting cavity; the protruding blocks are slidably arranged in the transverse sliding grooves.
Preferably, the flow dividing device adopts a four-way pipe.
Further, the first flow equalizing plate is a trapezoid plate, and the second flow equalizing plate is a rectangular plate.
Further, the bottom of the rectangular cavity is communicated with the bottom of the adjusting cavity.
Further, a first slot matched with the first horizontal partition plate is formed in the upper portion of the side wall of the inner cavity of the gas mixing body, and a second slot matched with the second horizontal partition plate is formed in the lower portion of the side wall of the inner cavity of the gas mixing body; the first horizontal partition plate is installed in the first slot; the second horizontal partition plate is installed in the second slot.
Further, sealing gaskets are arranged between the first sealing plate and the gas mixing body and between the second sealing plate and the gas mixing body.
Further, at least two mutually parallel air distribution plates are arranged in the air distribution cylinder, and the air distribution plates are vertically arranged.
The beneficial effects of the invention are as follows: the PID resistant device for the solar cell has the following advantages:
1. because of the unidirectional mixing device of nitrogen and oxygen, there are first check valves and first flow regulating valves on the nitrogen intake pipe; the oxygen inlet pipe is provided with a second one-way valve and a second flow regulating valve; meanwhile, a third one-way valve and a third flow regulating valve are arranged on the air outlet pipe; thus, the backflow and series flow of the gas can be effectively avoided;
secondly, an oxygen inlet cavity is formed between the first horizontal partition plate and the top of the gas mixing body cavity; a nitrogen inlet cavity is formed between the two horizontal partition plates and the bottom of the gas mixing body cavity; a first ventilation hole is formed in the first horizontal partition plate; the lower surface of the first horizontal partition plate is provided with first vertical partition plates which are uniformly distributed along the transverse direction; a second ventilation opening is formed in the second horizontal partition plate; the upper surface of the second horizontal partition plate is provided with second vertical partition plates which are uniformly distributed along the transverse direction; the second vertical partition plates on the second horizontal partition plates are positioned right below the gaps between two adjacent first vertical partition plates on the first horizontal partition plates; so that the oxygen and the nitrogen can be fully and uniformly mixed between the first horizontal partition plate and the second horizontal partition plate; and the reverse flow of the gas can be avoided.
2. Because the gas mixing and homogenizing device is provided with two layers of flow equalizing plates in the homogenizing main shell, the gas flowing out of the homogenizing main shell can be uniformly distributed at the opening at the lower end of the homogenizing main shell through the flow equalizing plates; so that the mixed gas can be uniformly distributed around the surface of the silicon wafer.
Meanwhile, the gas mixing and homogenizing device is also provided with a homogenizing region adjusting body, and the gas homogenizing region is adjusted by the homogenizing region adjusting body, so that the device is applicable to silicon wafers with different lengths; the range of application of the gas mixing homogenization device for the PID-resistant device of the solar cell can be increased.
Therefore, the mixed gas can be ensured to uniformly cover the periphery of the surface of the silicon wafer, and the method is applicable to the silicon wafers with different lengths; can effectively reduce the production cost.
Drawings
FIG. 1 is a perspective view of a solar cell anti-PID apparatus according to an embodiment of the invention;
FIG. 2 is a front view of a solar cell anti-PID apparatus according to an embodiment of the invention;
FIG. 3 is a top view of a solar cell anti-PID apparatus according to an embodiment of the invention;
FIG. 4 is an exploded schematic view of a nitrogen and oxygen unidirectional mixing device for a PID resistant apparatus for a solar cell according to an embodiment of the invention;
FIG. 5 is a perspective view of a nitrogen and oxygen unidirectional mixing device for a solar cell anti-PID apparatus according to an embodiment of the invention;
FIG. 6 is a front view of a nitrogen and oxygen unidirectional mixing device for a solar cell anti-PID apparatus according to an embodiment of the invention;
FIG. 7 is a top view of a nitrogen and oxygen unidirectional mixing device for a solar cell anti-PID apparatus according to an embodiment of the invention;
FIG. 8 is a cross-sectional view A-A of FIG. 7;
FIG. 9 is a B-B cross-sectional view of FIG. 6;
FIG. 10 is an exploded schematic view of a nitrogen and oxygen unidirectional mixing device for a PID resistant apparatus for a solar cell according to an embodiment of the invention;
FIG. 11 is a perspective view of a nitrogen and oxygen unidirectional mixing device for a solar cell anti-PID apparatus according to an embodiment of the invention;
FIG. 12 is a front view of a nitrogen and oxygen unidirectional mixing device for a solar cell anti-PID apparatus according to an embodiment of the invention;
FIG. 13 is a top view of a nitrogen and oxygen unidirectional mixing device for a solar cell anti-PID apparatus according to an embodiment of the invention;
FIG. 14 is a bottom view of a nitrogen and oxygen unidirectional mixing device for a solar cell anti-PID apparatus according to an embodiment of the invention;
FIG. 15 is a C-C cross-sectional view of FIG. 12;
FIG. 16 is a D-D sectional view of FIG. 13;
the figures indicate: 100-nitrogen and oxygen unidirectional mixing device, 11-gas mixing body, 12-first sealing plate, 13-second sealing plate, 14-nitrogen inlet pipe, 15-first unidirectional valve, 151-first flow regulating valve, 16-oxygen inlet pipe, 17-second unidirectional valve, 171-second flow regulating valve, 18-air distribution cylinder, 19-sealing plate, 110-air outlet pipe, 111-third unidirectional valve, 1111-third flow regulating valve; 112-a first horizontal partition plate, 113-a first ventilation hole, 114-a first vertical partition plate, 115-a second horizontal partition plate, 116-a second vertical partition plate, 117-a second ventilation hole, and 118-an air distribution plate; 200-an ozone generator;
300-a gas mixing and homogenizing device; 31-homogenizing main shell, 32-air inlet pipe, 33-flange, 34-first flow equalizing plate, 35-second flow equalizing plate, 36-homogenizing area adjusting body, 37-flow equalizing plate, 38-side sealing plate, 39-driving motor, 310-screw rod, 311-homogenizing adjusting plate, 312-air pipe, 313-flow dividing device, 314-air pipe, 315-electromagnetic valve, 316-inverted cone cavity, 317-central through hole, 318-perforation; 400-trachea.
Detailed Description
The invention will be further described with reference to the drawings and examples.
As shown in fig. 1 to 16, the anti-PID device for solar cells according to the present invention comprises a unidirectional mixing device 100 for nitrogen and oxygen, a dual oxygen generator 200, a gas mixing and homogenizing device 300, and a gas pipe 400;
the unidirectional mixing device 100 for nitrogen and oxygen is communicated with the air inlet 201 of the dual-oxygen generator 200; the gas mixing and homogenizing device 300 is communicated with the gas outlet 202 of the dual-oxygen generator 200 through a gas pipe 400;
the unidirectional mixing device 100 for nitrogen and oxygen comprises a gas mixing body 11; the gas mixing body 11 is provided with an inner cavity with two open ends;
a first sealing plate 12 is arranged at one end of the gas mixing body 11, and a second sealing plate 13 is arranged at the other end of the gas mixing body; the upper part of the cavity of the gas mixing body 11 is provided with a first horizontal baffle 112, and the lower part is provided with a second horizontal baffle 115; an oxygen inlet cavity is formed between the first horizontal partition 112 and the top of the cavity of the gas mixing body 11; a nitrogen gas inlet cavity is formed between the two horizontal partition plates 115 and the bottom of the cavity of the gas mixing body 11;
a nitrogen inlet pipe 14 communicated with a nitrogen inlet cavity is arranged on the first sealing plate 12, and a first one-way valve 15 and a first flow regulating valve 151 are arranged on the nitrogen inlet pipe 14;
an oxygen inlet pipe 16 communicated with the oxygen inlet cavity is arranged on the upper surface of the gas mixing body 11; the oxygen inlet pipe 16 is provided with a second one-way valve 17 and a second flow regulating valve 171;
the first horizontal partition plate 112 is provided with a first ventilation hole 113; the lower surface of the first horizontal partition 112 is provided with first vertical partitions 114 uniformly distributed along the transverse direction; the second horizontal partition 115 is provided with a second ventilation opening 117; the upper surface of the second horizontal partition 115 is provided with second vertical partitions 116 uniformly distributed in the transverse direction;
the second vertical partition plate 116 on the second horizontal partition plate 115 is located right below the gap between two adjacent first vertical partition plates 114 on the first horizontal partition plate 112;
an air outlet nozzle 131 is arranged on the second sealing plate 13; the air outlet nozzle 131 is connected with an air distribution cylinder 118; one end of the air distribution cylinder 118 is communicated with the air outlet nozzle 131, and the other end is provided with a sealing plate 19; an air distribution plate 118 is arranged in the air distribution cylinder 118; the sealing plate 19 is provided with an air outlet pipe 110 communicated with an air distribution cylinder 118; the air outlet pipe 110 is provided with a third one-way valve 111 and a third flow rate regulating valve 1111;
the gas mixing and homogenizing device 300 comprises a homogenizing main housing 31, a homogenizing zone adjusting body 36, and a flow dividing device 313; the homogenizing main shell 31 is provided with an inner cavity with an opening at the lower part, and an air inlet pipe 32 is arranged at the top of the homogenizing main shell 31; the lower edge of the homogenization main shell 31 is provided with a flange 33;
the upper part of the inner cavity of the homogenization main shell 31 is an inverted conical cavity 316, and the lower part is a rectangular cavity; at least two layers of first flow equalizing plates 34 are arranged in the inverted conical cavity 316; each layer of first flow equalizing plates 34 comprises at least two first flow equalizing plates 34 and is uniformly distributed along the transverse direction; the adjacent two layers of the first flow equalizing plates 34 are alternately distributed, namely, the gap between the adjacent two layers of the first flow equalizing plates 34 on the upper layer is positioned right above the first flow equalizing plate 34 on the lower layer;
at least two layers of second flow equalizing plates 35 are arranged in the rectangular cavity; each layer of second flow equalizing plates 35 comprises at least two second flow equalizing plates 35 and is uniformly distributed along the transverse direction; the adjacent two layers of second flow equalizing plates 35 are alternately distributed, namely, the gap between the adjacent two layers of second flow equalizing plates 35 on the upper layer is positioned right above the second flow equalizing plate 35 on the lower layer;
a mounting through cavity 361 is arranged at the center of the homogenizing region adjusting body 36; both ends of the homogenizing region adjusting body 36 are provided with adjusting cavities 362; a vent pipe 312 is arranged above the adjusting cavity 362;
the homogenizing region adjusting body 36 is sleeved on the homogenizing main shell 31, and the homogenizing main shell 31 passes through the mounting through cavity 361; the installation through cavity 361 is matched with the lower end of the homogenization main shell 31;
the end surface and the lower surface of the adjusting cavity 362 are provided with openings, and one end of the adjusting cavity 362 is provided with a side sealing plate 38; at least two layers of transverse flow equalizing plates 37 are arranged in the adjusting cavity 362; a transverse screw rod 310 is arranged at the center of the adjusting cavity 362;
a driving motor 39 for driving the screw 310 to rotate is arranged on the side sealing plate 38; a homogenizing adjusting plate 311 is slidably mounted in the adjusting cavity 362; the homogenizing adjusting plate 311 is provided with a perforation 318 matched with the flow equalizing plate 37; the flow equalizing plate 37 passes through the homogenizing adjusting plate 311, and the screw rod 310 passes through the homogenizing adjusting plate 311 and is in threaded fit with the homogenizing adjusting plate 311;
the breather pipe 312 is communicated with the flow dividing device 313 through the air guide pipe 314, and the air inlet pipe 32 is communicated with the flow dividing device 313; an electromagnetic valve 315 is arranged on the air duct 314 between the air duct 312 and the flow dividing device 313;
the flow dividing device 313 is communicated with the air outlet 202 of the dual-oxygen generator 200 through an air pipe 400; the air outlet pipe 110 is communicated with the air inlet 201 of the dual-oxygen generator 200.
During the working process:
firstly, mixing nitrogen and oxygen in a nitrogen and oxygen unidirectional mixing device 100; the pure oxygen supply device is communicated with the oxygen inlet pipe 16, and the pure nitrogen supply device is communicated with the nitrogen inlet pipe 14; in operation, the first and second flow valves 151 and 171 are opened; then, the pure oxygen supply device supplies air into the oxygen inlet cavity; the pure nitrogen supply device supplies air into the nitrogen inlet cavity; oxygen flows from the upper oxygen inlet chamber to the chamber between the first horizontal partition 112 and the second horizontal partition 115 through the first ventilation holes 113 on the first horizontal partition; the nitrogen flows from the lower nitrogen inlet chamber to the chamber between the first horizontal partition 112 and the second horizontal partition 115 through the second air holes 117 on the second horizontal partition 115;
since the first horizontal partition plate 112 is provided with the first ventilation holes 113; the lower surface of the first horizontal partition 112 is provided with first vertical partitions 114 uniformly distributed along the transverse direction; the second horizontal partition 115 is provided with a second ventilation opening 117; the upper surface of the second horizontal partition 115 is provided with second vertical partitions 116 uniformly distributed in the transverse direction; the second vertical partition plate 116 on the second horizontal partition plate 115 is located right below the gap between two adjacent first vertical partition plates 114 on the first horizontal partition plate 112; thus allowing the nitrogen and oxygen to be uniformly mixed within the chamber between the first horizontal partition 112 and the second horizontal partition 115.
Oxygen and nitrogen are mixed and then enter the gas cylinder 18 through the gas outlet nozzle 131 on the second sealing plate 13, the gas uniformly flows through the gas distribution plate 118 in the gas cylinder 18, then the mixed gas is discharged through the gas outlet pipe 110 on the sealing plate 19, the flow rate is regulated through the third flow valve 111 on the outlet pipe 110, and the gas backflow is avoided through the third one-way valve 1111.
Then, the mixed gas discharged from the gas outlet pipe 110 enters the ozone generator 200 to prepare ozone, and the mixed gas of ozone, oxygen and nitrogen is obtained.
Finally, a mixed gas of ozone, oxygen and nitrogen is introduced into the mixed gas homogenizing apparatus 300 through the gas pipe 400, so that the gas is homogenized. Firstly, the air pipe 400 is communicated with the shunt device 13; then, according to the size of the silicon wafer which is required to be subjected to PID resistance treatment, judging whether a homogenization area regulator 36 needs to be started to regulate the gas homogenization area; if the lower end of the homogenization main shell 31 is sufficient to cover the silicon wafer; the solenoid valve 315 is closed; the gas supply device is started to supply gas into the homogenization main shell 31, and then the gas is uniformly distributed at the opening at the lower end of the homogenization main shell 31 through the first flow equalization plate 34 and the second flow equalization plate 35 arranged in the homogenization main shell 31, so that the mixed gas is uniformly distributed around the silicon wafer.
When the lower end of the homogenization main shell 31 cannot be covered with silicon wafer; the solenoid valve 315 is opened; the gas supply device is started to supply gas into the homogenization main shell 31 and the homogenization area adjustment body 36, and then the driving motor 39 is started to enable the driving motor 39 to drive the screw rod 310 to rotate, so that the position of the homogenization adjustment plate 311 in the adjustment cavity 362 is adjusted, and the area of the adjustment cavity 362 with the gas and the lower end area of the homogenization main shell 31 can cover the silicon wafer.
The mixed gas entering the homogenizing main shell 31 is uniformly distributed at the opening of the lower end of the homogenizing main shell 31 through a first flow equalizing plate 34 and a second flow equalizing plate 35 arranged in the homogenizing main shell 31, and the mixed gas entering the homogenizing region adjusting body 36 is uniformly distributed when exiting from the opening of the lower end of the region adjusting body 36 through a flow equalizing plate 37 in the homogenizing region adjusting body 36; so that the mixed gas is uniformly distributed around the silicon wafer.
In summary, the solar cell anti-PID device of the invention has the following advantages:
1. because of the unidirectional mixing device of nitrogen and oxygen, there are first check valves and first flow regulating valves on the nitrogen intake pipe; the oxygen inlet pipe is provided with a second one-way valve and a second flow regulating valve; meanwhile, a third one-way valve and a third flow regulating valve are arranged on the air outlet pipe; thus, the backflow and series flow of the gas can be effectively avoided;
secondly, an oxygen inlet cavity is formed between the first horizontal partition plate and the top of the gas mixing body cavity; a nitrogen inlet cavity is formed between the two horizontal partition plates and the bottom of the gas mixing body cavity; a first ventilation hole is formed in the first horizontal partition plate; the lower surface of the first horizontal partition plate is provided with first vertical partition plates which are uniformly distributed along the transverse direction; a second ventilation opening is formed in the second horizontal partition plate; the upper surface of the second horizontal partition plate is provided with second vertical partition plates which are uniformly distributed along the transverse direction; the second vertical partition plates on the second horizontal partition plates are positioned right below the gaps between two adjacent first vertical partition plates on the first horizontal partition plates; so that the oxygen and the nitrogen can be fully and uniformly mixed between the first horizontal partition plate and the second horizontal partition plate; and the reverse flow of the gas can be avoided.
2. Because the gas mixing and homogenizing device is provided with two layers of flow equalizing plates in the homogenizing main shell, the gas flowing out of the homogenizing main shell can be uniformly distributed at the opening at the lower end of the homogenizing main shell through the flow equalizing plates; so that the mixed gas can be uniformly distributed around the surface of the silicon wafer.
Meanwhile, the gas mixing and homogenizing device is also provided with a homogenizing region adjusting body, and the gas homogenizing region is adjusted by the homogenizing region adjusting body, so that the device is applicable to silicon wafers with different lengths; the range of application of the gas mixing homogenization device for the PID-resistant device of the solar cell can be increased.
Therefore, the mixed gas can be ensured to uniformly cover the periphery of the surface of the silicon wafer, and the method is applicable to the silicon wafers with different lengths; can effectively reduce the production cost.
In order to facilitate installation and simplify the structure, further, a first slot matched with the first horizontal partition plate 112 is arranged at the upper part of the side wall of the inner cavity of the gas mixing body 11, and a second slot matched with the second horizontal partition plate 115 is arranged at the lower part of the side wall of the inner cavity of the gas mixing body 11; the first horizontal partition 112 is installed in the first slot; the second horizontal partition 115 is mounted in the second slot.
In order to make the sealing performance of the device better, further, sealing gaskets are arranged between the first sealing plate 12 and the gas mixing body 11 and between the second sealing plate 13 and the gas mixing body 11.
In order to make the gas flow uniformly, further, at least two gas distribution plates 118 parallel to each other are disposed in the gas distribution cylinder 18, and the gas distribution plates 118 are vertically disposed.
In order to facilitate the sliding installation of the homogenization adjusting plate 311 in the adjusting cavity 362, further, two sides of the lower end of the homogenization adjusting plate 311 are provided with protruding blocks; a transverse chute 363 matched with the convex block is arranged above and below the side wall of the adjusting cavity 362; the lugs are slidably mounted within the transverse slots 363.
In order to simplify the structure, facilitate installation and reduce the cost, it is preferable that the flow dividing device 313 adopts a four-way pipe.
In order to facilitate the diversion of the air flow, further, as shown in fig. 15, the first flow equalizing plate 34 is a trapezoid plate, and the second flow equalizing plate 35 is a rectangular plate; and is arranged in an arrangement as shown in figure 15.
In order to ensure that the gas can be uniformly distributed around the surface of the silicon wafer, further, the bottom of the rectangular cavity is communicated with the bottom of the adjusting cavity 362.
Claims (6)
1. The PID resistant device for the solar cell is characterized in that: comprises a nitrogen and oxygen unidirectional mixing device (100), a double-oxygen generator (200), a gas mixing and homogenizing device (300) and a gas pipe (400);
the nitrogen and oxygen unidirectional mixing device (100) is communicated with an air inlet (201) of the dual-oxygen generator (200); the gas mixing and homogenizing device (300) is communicated with the gas outlet (202) of the double-oxygen generator (200) through a gas pipe (400);
the unidirectional mixing device (100) for nitrogen and oxygen comprises a gas mixing body (11); the gas mixing body (11) is provided with an inner cavity with two open ends;
one end of the gas mixing body (11) is provided with a first sealing plate (12), and the other end is provided with a second sealing plate (13); the upper part of the cavity of the gas mixing body (11) is provided with a first horizontal partition board (112), and the lower part of the cavity is provided with a second horizontal partition board (115); an oxygen inlet cavity is formed between the first horizontal partition plate (112) and the top of the cavity of the gas mixing body (11); a nitrogen gas inlet cavity is formed between the second horizontal partition plate (115) and the bottom of the cavity of the gas mixing body (11);
a nitrogen inlet pipe (14) communicated with the nitrogen inlet cavity is arranged on the first sealing plate (12), and a first one-way valve (15) and a first flow regulating valve (151) are arranged on the nitrogen inlet pipe (14);
an oxygen inlet pipe (16) communicated with the oxygen inlet cavity is arranged on the upper surface of the gas mixing body (11); the oxygen inlet pipe (16) is provided with a second one-way valve (17) and a second flow regulating valve (171);
a first ventilation hole (113) is formed in the first horizontal partition plate (112); the lower surface of the first horizontal partition plate (112) is provided with first vertical partition plates (114) which are uniformly distributed along the transverse direction; a second ventilation opening (117) is formed in the second horizontal partition plate (115); the upper surface of the second horizontal partition plate (115) is provided with second vertical partition plates (116) which are uniformly distributed along the transverse direction;
a second vertical partition plate (116) on the second horizontal partition plate (115) is positioned right below a gap between two adjacent first vertical partition plates (114) on the first horizontal partition plate (112);
an air outlet nozzle (131) is arranged on the second sealing plate (13); the air outlet nozzle (131) is connected with an air distribution cylinder (18); one end of the air distribution cylinder (18) is communicated with the air outlet nozzle (131), and the other end of the air distribution cylinder is provided with a sealing plate (19); an air distribution plate (118) is arranged in the air distribution cylinder (18); the sealing plate (19) is provided with an air outlet pipe (110) communicated with the air distribution cylinder (18); a third one-way valve (111) and a third flow rate regulating valve (1111) are arranged on the air outlet pipe (110);
the gas mixing and homogenizing device (300) comprises a homogenizing main housing (31), a homogenizing region adjusting body (36) and a flow dividing device (313); the homogenizing main shell (31) is provided with an inner cavity with an opening at the lower part, and an air inlet pipe (32) is arranged at the top of the homogenizing main shell (31); the lower edge of the homogenization main shell (31) is provided with a flange (33);
the upper part of the inner cavity of the homogenization main shell (31) is an inverted conical cavity (316), and the lower part is a rectangular cavity; at least two layers of first flow equalizing plates (34) are arranged in the inverted conical cavity (316); each layer of first flow equalizing plates (34) comprises at least two first flow equalizing plates (34) and is uniformly distributed along the transverse direction; the adjacent two layers of the first flow equalizing plates (34) are alternately distributed, namely, the gap between the adjacent two layers of the first flow equalizing plates (34) on the upper layer is positioned right above the first flow equalizing plate (34) on the lower layer;
at least two layers of second flow equalizing plates (35) are arranged in the rectangular cavity; each layer of second flow equalizing plates (35) comprises at least two second flow equalizing plates (35) which are uniformly distributed along the transverse direction; the adjacent two layers of second flow equalizing plates (35) are alternately distributed, namely, the gap between the adjacent two layers of second flow equalizing plates (35) on the upper layer is positioned right above the second flow equalizing plate (35) on the lower layer;
a mounting through cavity (361) is arranged at the central position of the homogenizing region adjusting body (36); both ends of the homogenizing region adjusting body (36) are provided with adjusting cavities (362); a vent pipe (312) is arranged above the adjusting cavity (362);
the homogenizing region adjusting body (36) is sleeved on the homogenizing main shell (31), and the homogenizing main shell (31) penetrates through the mounting through cavity (361); the installation through cavity (361) is matched with the lower end of the homogenization main shell (31);
the end face and the lower surface of the adjusting cavity (362) are provided with openings, and one end of the adjusting cavity (362) is provided with a side sealing plate (38); at least two layers of transverse flow equalizing plates (37) are arranged in the adjusting cavity (362); a transverse screw rod (310) is arranged at the center of the adjusting cavity (362);
a driving motor (39) for driving the screw rod (310) to rotate is arranged on the side face sealing plate (38); a homogenizing adjusting plate (311) is slidably arranged in the adjusting cavity (362); the homogenizing adjusting plate (311) is provided with a perforation (318) matched with the flow equalizing plate (37); the flow equalizing plate (37) passes through the homogenizing adjusting plate (311), and the screw rod (310) passes through the homogenizing adjusting plate (311) and is in threaded fit with the homogenizing adjusting plate (311);
the breather pipe (312) is communicated with the flow dividing device (313) through a gas guide pipe (314), and the gas inlet pipe (32) is communicated with the flow dividing device (313); an electromagnetic valve (315) is arranged on the air duct (314) between the air duct (312) and the shunt device (313);
the flow dividing device (313) is communicated with the air outlet (202) of the double-oxygen generator (200) through an air pipe (400); the air outlet pipe (110) is communicated with an air inlet (201) of the double-oxygen generator (200);
the two sides of the lower end of the homogenizing adjusting plate (311) are provided with convex blocks; a transverse chute (363) matched with the convex block is arranged above and below the side wall of the adjusting cavity (362); the convex blocks are slidably arranged in the transverse sliding grooves (363);
the upper part of the side wall of the inner cavity of the gas mixing body (11) is provided with a first slot matched with the first horizontal partition board (112), and the lower part of the side wall of the inner cavity of the gas mixing body (11) is provided with a second slot matched with the second horizontal partition board (115); the first horizontal partition plate (112) is installed in the first slot; the second horizontal partition (115) is mounted in the second slot.
2. The solar cell anti-PID device of claim 1, characterized in that: the flow dividing device (313) adopts a four-way pipe.
3. The solar cell anti-PID device of claim 2, characterized in that: the first flow equalizing plate (34) is a trapezoid plate, and the second flow equalizing plate (35) is a rectangular plate.
4. The solar cell anti-PID device of claim 3, wherein: the bottom of the rectangular cavity is communicated with the bottom of the adjusting cavity (362).
5. The solar cell anti-PID device of claim 1, characterized in that: sealing gaskets are arranged between the first sealing plate (12) and the gas mixing body (11) and between the second sealing plate (13) and the gas mixing body (11).
6. The solar cell anti-PID device of claim 5, wherein: at least two mutually parallel air distribution plates (118) are arranged in the air distribution cylinder (18), and the air distribution plates (118) are vertically arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811468764.8A CN109494281B (en) | 2018-12-03 | 2018-12-03 | PID-resistant device for solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811468764.8A CN109494281B (en) | 2018-12-03 | 2018-12-03 | PID-resistant device for solar cell |
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| CN109494281B true CN109494281B (en) | 2024-01-26 |
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