CN109494145A - Surface wave plasma process equipment - Google Patents
Surface wave plasma process equipment Download PDFInfo
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- CN109494145A CN109494145A CN201710811717.8A CN201710811717A CN109494145A CN 109494145 A CN109494145 A CN 109494145A CN 201710811717 A CN201710811717 A CN 201710811717A CN 109494145 A CN109494145 A CN 109494145A
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- waveguide
- process equipment
- surface wave
- plasma process
- wave plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of surface wave plasma process equipment, including microwave source mechanism, waveguide mechanism, resonant cavity and reaction chamber, wherein, for microwave source mechanism by waveguide mechanism by microwave energy delivery to the resonant cavity, resonant cavity is located at the top of reaction chamber, for conveying the microwave energy to reaction chamber, the waveguide mechanism includes cylindrical waveguide and rectangular waveguide, wherein cylindrical waveguide is vertically arranged, and it is located at the top of resonant cavity, and cylindrical waveguide is connected with resonant cavity；The length direction of rectangular waveguide is horizontally disposed, and the input terminal of rectangular waveguide is connect with microwave source mechanism, and the output end of rectangular waveguide is connected with the input terminal of cylindrical waveguide.Surface wave plasma process equipment provided by the invention, can avoid the occurrence of spark phenomenon, so as to improve the safety of equipment.
Description
Technical field
The present invention relates to microelectronics technology, in particular to a kind of surface wave plasma process equipment.
Background technique
Currently, plasma processing device is widely used in the manufacturing process of integrated circuit or MEMS device.Deng
Plasma processing apparatus includes capacitance coupling plasma process equipment, inductively coupled plasma body process equipment, electron cyclotron
Resonance Plasma process equipment and surface wave plasma process equipment etc..Wherein, surface wave plasma process equipment phase
For other plasma processing devices, higher plasma density, lower electron temperature can be obtained, and do not need
Increase external magnetic field, therefore surface wave plasma process equipment becomes one of state-of-the-art plasma apparatus.
A kind of existing surface wave plasma process equipment mainly includes microwave source mechanism, resonant cavity and reaction chamber.
Wherein, the pedestal for bearing wafer is provided in reaction chamber.Microwave source mechanism is used to provide microwave energy to resonant cavity；
Resonant cavity is located at the top of reaction chamber, for conveying microwave energy to reaction chamber.
Existing surface wave plasma process equipment has the following problems in practical applications: in microwave source mechanism to humorous
When vibration chamber feed-in microwave energy, spark phenomenon is often generated, so that there are security risks.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of surface wave plasma is proposed
Body process equipment can avoid the occurrence of spark phenomenon, so as to improve the safety of equipment.
A kind of surface wave plasma process equipment, including microwave source mechanism, wave are provided to achieve the purpose of the present invention
Lead mechanism, resonant cavity and reaction chamber, wherein the microwave source mechanism is by the waveguide mechanism by microwave energy delivery to institute
Resonant cavity is stated, the resonant cavity is located at the top of the reaction chamber, for conveying the microwave energy to the reaction chamber,
The waveguide mechanism includes cylindrical waveguide and rectangular waveguide, wherein
The cylindrical waveguide is vertically arranged, and is located at the top of the resonant cavity, and the cylindrical waveguide and institute
Resonant cavity is stated to be connected；
The length direction of the rectangular waveguide is horizontally disposed, and the input terminal of the rectangular waveguide and the microwave source mechanism
Connection, the output end of the rectangular waveguide are connected with the input terminal of the cylindrical waveguide.
Preferably, the vertical axis of the cylindrical waveguide and the vertical axis of the resonant cavity coincide.
Preferably, the resonant cavity includes metal cavity and multiple metal probes, wherein
Multiple metal probes are uniformly distributed along the center of the metal cavity, and the lower end of each metal probe
Run through the top chamber wall of the metal cavity straight down, and extends to the inside of the metal cavity；
Multiple medium windows, the quantity of multiple medium windows and position are provided in the bottom chamber wall of the metal cavity
It is corresponded with the quantity of multiple metal probes and position, the medium window is used for the microwave energy in the metal cavity
Measure the inside of reaction chamber described in feed-in.
Preferably, the center line of the rectangular waveguide in the longitudinal direction on the horizontal cross-section of the metal cavity just
Projection coincide with specific center line, the specific center line be on the horizontal cross-section of the metal cavity, and be located at arbitrarily
The radial alignment of the centre of two adjacent medium windows.
Preferably, the center of orthographic projection of each metal probe on the corresponding medium window with it is described
The center of medium window coincides.
Preferably, the quantity of the medium window is 3-8；The value range of the diameter of the medium window is in 40~120mm.
Preferably, material used by the medium window includes quartz or ceramics.
Preferably, material used by the metal cavity includes aluminium alloy or stainless steel.
Preferably, perpendicular between the lower end of each metal probe and the bottom chamber wall of the metal cavity by adjusting
Straight spacing, to adjust the Density Distribution of the plasma formed in the reaction chamber.
Preferably, the microwave source mechanism includes power supply, the microwave set gradually along the transmission direction of the microwave energy
Source, circulator, impedance adjustment unit and directional coupler.
The invention has the following advantages:
Surface wave plasma process equipment provided by the invention, waveguide mechanism include cylindrical waveguide and rectangular wave
It leads, wherein cylindrical waveguide is vertically arranged, and is located at the top of resonant cavity, and cylindrical waveguide is connected with resonant cavity；Square
The length direction of shape waveguide is horizontally disposed, and the input terminal of rectangular waveguide is connect with microwave source mechanism, the output end of rectangular waveguide
It is connected with the input terminal of cylindrical waveguide.Above-mentioned rectangular waveguide is used for transmission TE10 mould, and cylindrical waveguide is used for transmission TE11
Mould, both modes belong to the electromagnetic field of TE mould, and electromagnetism field distortion is not present, to realize microwave energy feed-in resonance
Chamber.This avoids spark phenomenon appearance, compared with waveguide mechanism in the prior art so as to improve the safety of equipment.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of surface wave plasma process equipment provided in an embodiment of the present invention；
Fig. 2 is orthographic projection schematic diagram of the waveguide mechanism in the top chamber wall of metal cavity.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The surface wave plasma process equipment of offer is described in detail.
Also referring to Fig. 1 and Fig. 2, surface wave plasma process equipment provided in an embodiment of the present invention comprising micro-
Wave source mechanism, waveguide mechanism, resonant cavity and reaction chamber 29, wherein be provided in reaction chamber 29 for bearing wafer
Pedestal 30.Microwave source mechanism includes the power supply 21 set gradually along the transmission direction of microwave energy, for generating electromagnetic field of high frequency
Microwave source 22, the circulator 23 for absorbing reflection power, for matched load with reduce the impedance of reflection power adjust it is single
Member 24 and the directional coupler for measuring incident power and reflection power.The microwave source mechanism is used for will be micro- by waveguide mechanism
Wave energy is delivered to resonant cavity.
Waveguide mechanism includes cylindrical waveguide 27 and rectangular waveguide 26, wherein cylindrical waveguide 27 is vertically arranged, and is located at
The top of resonant cavity, and cylindrical waveguide 27 is connected with resonant cavity, and Fig. 1 shows lower end and the resonance of cylindrical waveguide 27
Chamber connection；The length direction of rectangular waveguide 26 is horizontally disposed, and (input terminal is rectangle to the input terminal of rectangular waveguide 26 in Fig. 1
The left end of waveguide 26) it is connect with above-mentioned microwave source mechanism, (input terminal is rectangular waveguide to the output end of rectangular waveguide 26 in Fig. 1
26 right end) it is connected with the input terminal (input terminal can be located on the side wall of cylindrical waveguide 27) of cylindrical waveguide 27.
Above-mentioned rectangular waveguide 26 is used for transmission TE10 mould, and cylindrical waveguide 27 is used for transmission TE11 mould, both modes are all
Belong to the electromagnetic field of TE mould, electromagnetism field distortion is not present, to realize microwave energy feed-in resonant cavity.This in the prior art
Waveguide mechanism compare, the spark phenomenon occurred by screw probe is avoided, so as to improve the safety of equipment.
In addition, cylindrical waveguide 27 can be such that microwave energy redistributes in intra resonant cavity, while the structure of resonant cavity
Themselves such that the mode stable of its built-in field is in TM mode.Preferably, the vertical axis and wire chamber of cylindrical waveguide 27
The vertical axis of body 281 coincides, to guarantee the field uniformity in resonant cavity.
In the present embodiment, resonant cavity is located at the top of reaction chamber 29, for conveying microwave energy to reaction chamber 29.
Specifically, which includes metal cavity 281 and multiple metal probes 282, wherein material used by metal cavity includes
Aluminium alloy or stainless steel.Multiple metal probes 282 are uniformly distributed (as shown in Figure 1) along the center of metal cavity 281, and each
The top chamber wall 281a of metal cavity 281 is run through in the lower end of metal probe 282 straight down, and extends to metal cavity 281
It is internal.
Part of the metal probe 282 inside metal cavity 281, can make electric field perpendicular to the radial direction of metal cavity 281
Section, magnetic field are parallel to the radial section of metal cavity 281, to change original field distribution, and excite higher mode, in turn
The electric field strength near it can be enhanced, so as to the easier initial ionization completed in low pressure to gas, in turn
Expand process window.
Preferably, as shown in Figure 1, the center line of rectangular waveguide 26 in the longitudinal direction is cut in the level of metal cavity 281
Orthographic projection on face coincides with specific center line, which is and to be located on 281 horizontal cross-sections of metal cavity
The radial alignment X of the centre of two medium windows 283 of arbitrary neighborhood.Accordingly even when the electric field in resonant cavity is deposited in wave guide direction
Uneven, the symmetrical of the electric field of the two sides radial alignment X also can guarantee, thus the coupling energy of the quartz window 283 of the two sides straight line X
Also identical, to maintain the field uniformity in resonant cavity to the maximum extent, and then it can produce wide area surface more evenly
Wave plasma, improves process consistency.
Preferably, by adjusting between the lower end of each metal probe 282 and the bottom chamber wall 281b of metal cavity 281
Vertical spacing can be adjusted the distribution of electromagnetic field of high frequency, so as to adjust formed in reaction chamber 29 it is equal from
The Density Distribution of daughter.
Moreover, multiple medium windows 283 are provided in the bottom chamber wall 281a of metal cavity 281, multiple medium windows 283
The quantity and position of quantity and position and multiple metal probes 282 correspond, and medium window 283 is used for will be in metal cavity 282
Microwave energy feed-in reaction chamber 29 inside.Material used by medium window 283 may include quartz, ceramics etc..It is easy
Understand, medium window 283 runs through the thickness of top chamber wall 281a, with can be by the inside of microwave energy feed-in reaction chamber 29.
In addition, in the present embodiment, medium window 283 is cylinder, but the present invention is not limited thereto, in practical application
In, medium window 283 can also be two cylinders set gradually along the vertical direction, and the outer diameter of column body is greater than the outer of lower prop
Diameter.Also, the stepped hole through its thickness is provided in top chamber wall 281a, as long as in this way, medium window 283 is put into ladder
Installation can be completed in Kong Zhong.
According to the specific needs of technique plasma area, the quantity of medium window 283 can be a for 3-8, and preferably 6
It is a；The value range of the diameter of the medium window is in 40~120mm, preferably in 60~90mm.
It is further preferred that as shown in Fig. 2, positive throwing of each metal probe 282 on corresponding medium window 283
The center of shadow and the center of medium window 283 coincide, this is conducive to microwave energy and couples downwards.
In conclusion surface wave plasma process equipment provided by the invention, waveguide mechanism include cylindrical waveguide
27 and rectangular waveguide 26, rectangular waveguide 26 be used for transmission TE10 mould, cylindrical waveguide 27 is used for transmission TE11 mould, both modes
The electromagnetic field of TE mould is belonged to, electromagnetism field distortion is not present, to realize microwave energy feed-in resonant cavity.This and the prior art
In waveguide mechanism compare, the appearance of spark phenomenon is avoided, so as to improve the safety of equipment.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of surface wave plasma process equipment, including microwave source mechanism, waveguide mechanism, resonant cavity and reaction chamber,
In, for the microwave source mechanism by the waveguide mechanism by microwave energy delivery to the resonant cavity, the resonant cavity is located at institute
The top of reaction chamber is stated, for conveying the microwave energy to the reaction chamber, which is characterized in that waveguide mechanism packet
Include cylindrical waveguide and rectangular waveguide, wherein
The cylindrical waveguide is vertically arranged, and be located at the resonant cavity top, and the cylindrical waveguide with it is described humorous
Vibration chamber is connected；
The length direction of the rectangular waveguide is horizontally disposed, and the input terminal of the rectangular waveguide and the microwave source mechanism connect
It connects, the output end of the rectangular waveguide is connected with the input terminal of the cylindrical waveguide.
2. surface wave plasma process equipment according to claim 1, which is characterized in that the cylindrical waveguide erects
Straight axis and the vertical axis of the resonant cavity coincide.
3. surface wave plasma process equipment according to claim 1 or 2, which is characterized in that the resonant cavity includes
Metal cavity and multiple metal probes, wherein
Multiple metal probes are uniformly distributed along the center of the metal cavity, and the lower end of each metal probe is vertical
Downward through the top chamber wall of the metal cavity, and extend to the inside of the metal cavity；
It is provided with multiple medium windows in the bottom chamber wall of the metal cavity, the quantity of multiple medium windows and position and more
The quantity of a metal probe and position correspond, and the medium window is used to present the microwave energy in the metal cavity
Enter the inside of the reaction chamber.
4. surface wave plasma process equipment according to claim 3, which is characterized in that the rectangular waveguide is in length
Orthographic projection of the center line on the horizontal cross-section of the metal cavity on direction coincides with specific center line, it is described it is specific in
Heart line is that the radial direction on the horizontal cross-section of the metal cavity, and positioned at the centre of two medium windows of arbitrary neighborhood is straight
Line.
5. surface wave plasma process equipment according to claim 3, which is characterized in that each metal probe exists
The center of orthographic projection on the corresponding medium window and the center of the medium window coincide.
6. surface wave plasma process equipment according to claim 3, which is characterized in that the quantity of the medium window is
3-8；The value range of the diameter of the medium window is in 40~120mm.
7. surface wave plasma process equipment according to claim 3, which is characterized in that used by the medium window
Material includes quartz or ceramics.
8. surface wave plasma process equipment according to claim 3, which is characterized in that the metal cavity is used
Material include aluminium alloy or stainless steel.
9. surface wave plasma process equipment according to claim 3, which is characterized in that by adjusting each gold
Belong to the vertical spacing between the lower end of probe and the bottom chamber wall of the metal cavity, is formed in the reaction chamber to adjust
Plasma Density Distribution.
10. surface wave plasma process equipment according to claim 1, which is characterized in that the microwave source mechanism packet
Include power supply, microwave source, circulator, impedance adjustment unit and the directional couple set gradually along the transmission direction of the microwave energy
Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710811717.8A CN109494145B (en) | 2017-09-11 | 2017-09-11 | Surface wave plasma processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710811717.8A CN109494145B (en) | 2017-09-11 | 2017-09-11 | Surface wave plasma processing apparatus |
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| Publication Number | Publication Date |
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| CN109494145A true CN109494145A (en) | 2019-03-19 |
| CN109494145B CN109494145B (en) | 2021-01-08 |
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| CN201710811717.8A Active CN109494145B (en) | 2017-09-11 | 2017-09-11 | Surface wave plasma processing apparatus |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0246785A (en) * | 1988-07-01 | 1990-02-16 | Messer Griesheim Gmbh | Method of electric excitation of gas laser and gas laser |
| CN101127413A (en) * | 2007-08-21 | 2008-02-20 | 西安电子科技大学 | Microwave resonance cavity |
| CN101144155A (en) * | 2007-08-21 | 2008-03-19 | 西安电子科技大学 | Microwave electron cyclotron resonance plasma chemistry gas phase sedimentation device |
| CN103227089A (en) * | 2012-01-31 | 2013-07-31 | 东京毅力科创株式会社 | Microwave emitting device and surface wave plasma processing apparatus |
| CN104726850A (en) * | 2013-12-23 | 2015-06-24 | 朱雨 | Microwave-plasma chemical vapor deposition equipment |
| CN105430862A (en) * | 2014-09-23 | 2016-03-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Surface-wave plasma equipment |
| CN107087339A (en) * | 2017-07-03 | 2017-08-22 | 李容毅 | A kind of enhanced microwave plasma torch generating means of two-chamber excitation |
-
2017
- 2017-09-11 CN CN201710811717.8A patent/CN109494145B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0246785A (en) * | 1988-07-01 | 1990-02-16 | Messer Griesheim Gmbh | Method of electric excitation of gas laser and gas laser |
| CN101127413A (en) * | 2007-08-21 | 2008-02-20 | 西安电子科技大学 | Microwave resonance cavity |
| CN101144155A (en) * | 2007-08-21 | 2008-03-19 | 西安电子科技大学 | Microwave electron cyclotron resonance plasma chemistry gas phase sedimentation device |
| CN103227089A (en) * | 2012-01-31 | 2013-07-31 | 东京毅力科创株式会社 | Microwave emitting device and surface wave plasma processing apparatus |
| CN104726850A (en) * | 2013-12-23 | 2015-06-24 | 朱雨 | Microwave-plasma chemical vapor deposition equipment |
| CN105430862A (en) * | 2014-09-23 | 2016-03-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Surface-wave plasma equipment |
| CN107087339A (en) * | 2017-07-03 | 2017-08-22 | 李容毅 | A kind of enhanced microwave plasma torch generating means of two-chamber excitation |
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| CN109494145B (en) | 2021-01-08 |
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