CN109473536A - Light emitting diode display and method of manufacturing the same - Google Patents
Light emitting diode display and method of manufacturing the same Download PDFInfo
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- CN109473536A CN109473536A CN201811317036.7A CN201811317036A CN109473536A CN 109473536 A CN109473536 A CN 109473536A CN 201811317036 A CN201811317036 A CN 201811317036A CN 109473536 A CN109473536 A CN 109473536A
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- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
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- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A method of manufacturing a light emitting diode display includes the following steps. A substrate including a plurality of drive elements is provided. A plurality of light emitting units are transposed on a substrate, and each light emitting unit comprises a first electrode, a second electrode and a light emitting structure positioned between the first electrode and the second electrode. And forming corresponding first conductor structures on the light-emitting units respectively. An insulating layer is formed on the substrate, covering the first conductor structure and the first electrode and exposing the second electrode. And forming a second conductor structure electrically connected to the second electrode on the insulating layer, wherein the light-emitting unit comprises a plurality of first and second light-emitting units, the first conductor structure of the first light-emitting unit is electrically connected to the corresponding first electrode and the driving element, and the first conductor structure of the second light-emitting unit is electrically connected to the corresponding first electrode and the second electrode.
Description
Technical field
The present invention relates to a kind of display and its manufacturing methods, and in particular to a kind of light emitting diode indicator and its system
Make method.
Background technique
With the evolution of photoelectric technology, traditional incandescent lamp bulb and fluorescent tube are gradually by the solid state light emitter example of a new generation
Light emitting diode (light-emitting diode, LED) in this way is replaced, has that such as service life is long, small in size, high anti-seismic
Property, bloom efficiency and the advantages that low power consumption, therefore used in home lighting and various equipment as light source extensively.
Other than light emitting diode has been widely used as light source in the backlight module of liquid crystal display and household lighting fixtures, in recent years
Come, the application field of light emitting diode has extended to road lighting, large-scale billboards, traffic signal light, UV solidification and correlation
Field.Light emitting diode has become one of the main project of light source that development has both power saving and environment-friendly function.
In LED field, micro-led (micro LED) has high brightness, high comparison, small in size and low power consumption
The advantages that, therefore be gradually taken seriously in recent years.When it is micro-led be applied in the field of display technology, with it is red,
Blue, green micro-led chip as display sub-pixel, by these it is multiple can independently shine it is micro-led
Display technology of the arrangements of chips at display picture, the technology of as micro-led display.
In general, micro-led display is arranged micro-led in master using transposition technology
In dynamic array substrate, however flood tide transposition (mass transfer) technique is easy to appear that contraposition is inaccurate or electrode bridge joint is bad
The problem of, in turn result in micro-led resolution ratio can not be promoted and production yield decline.
Therefore, how to improve electrode and bridge undesirable problem, to promote the resolution ratio and production of light emitting diode indicator
Yield, one of the project that actually current research staff actively studies.
Summary of the invention
The present invention provides a kind of light emitting diode indicator and its manufacturing method, can improve that electrode bridge joint is undesirable to ask
Topic, so that there is light emitting diode indicator preferable production yield promote the resolution ratio of display simultaneously.
The manufacturing method of light emitting diode indicator of the invention comprising following steps: providing includes multiple driving members
The substrate of part.In on substrate, luminescence unit respectively includes first electrode, second electrode and is located at first the multiple luminescence units of transposition
Light emitting structure between electrode and second electrode.Corresponding first conductor structure is respectively formed on luminescence unit, the first conductor
Structure is electrically connected with corresponding first electrode respectively.In forming insulating layer on substrate, insulating layer covers the first conductor structure
With first electrode and expose second electrode.And in forming the second conductor structure on insulating layer, keep the second conductor structure electrical
It is connected to second electrode, wherein luminescence unit includes multiple first luminescence units and multiple second luminescence units, and first is luminous single
First conductor structure of member is electrically connected corresponding first electrode and corresponding driving element, and the of the second luminescence unit
One conductor structure is electrically connected corresponding first electrode and corresponding second electrode.
In light emitting diode indicator of the invention comprising substrate, the first luminescence unit, the second luminescence unit, multiple
First conductor structure, the first insulating layer and the second conductor structure.Substrate includes driving element and common electrode.First is luminous single
Member is set on substrate, and the first luminescence unit include first electrode, second electrode and be configured at first electrode and this second electricity
The first light emitting structure between pole.Second luminescence unit is set on substrate, and the second luminescence unit includes third electrode, the 4th
Electrode and the second light emitting structure being configured between third electrode and the 4th electrode.Multiple first conductor structures are respectively arranged at
On one luminescence unit and the second luminescence unit, and first electrode is electrically connected by corresponding first conductor structure with driving element
It connects, and third electrode is electrically connected by corresponding first conductor structure and the 4th electrode and common electrode.First insulating layer
It is set on substrate, and the first insulating layer is covered on first electrode.Second conductor structure be set on the first insulating layer and
Second conductor structure is electrical connected with second electrode and the 4th electrode.
Based on above-mentioned, in light emitting diode indicator and its manufacturing method of the invention, luminescence unit includes multiple
One luminescence unit and multiple second luminescence units, wherein the first conductor structure of the first luminescence unit is electrically connected corresponding the
One electrode and corresponding driving element, and the first conductor structure of the second luminescence unit is electrically connected corresponding first electrode
With corresponding second electrode.In this way, which the second luminescence unit can be used to bridge to the first luminescence unit as from substrate
Conducting wire, therefore can avoid bridge circuit at the climbing of the first luminescence unit (such as side wall) and lead to the problem of broken string, and show
The space for being used to be arranged bridge circuit in area can also reduce, and light emitting diode indicator is caused to have good resolution ratio and production
Yield.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and cooperate specification attached
Figure is described in detail below.
Detailed description of the invention
Figure 1A to Fig. 1 D is the diagrammatic cross-section of the manufacturing method of the light emitting diode indicator of one embodiment of the invention.
Fig. 2 is the top view of the light emitting diode indicator of one embodiment of the invention.
Fig. 3 is the top view of the light emitting diode indicator of another embodiment of the present invention.
Fig. 4 is the top view of the light emitting diode indicator of further embodiment of this invention.
Fig. 5 is the diagrammatic cross-section of the light emitting diode indicator of yet another embodiment of the invention.
Fig. 6 is the diagrammatic cross-section of the light emitting diode indicator of yet another embodiment of the invention.
Description of symbols:
100: substrate
S: substrate
TFT: driving element
C1, C2: contact hole
IL1, IL2, IL3, IL3 ': insulating layer
CE: common electrode
EU1, EU2: luminescence unit
E1, E1 ': first electrode
E2: second electrode
LES: light emitting structure
SE1: the first semiconductor layer
SE2: the second semiconductor layer
EL: active layers
CS1: the first conductor structure
CS2, CS2 ': the second conductor structure
AA: viewing area
PA: peripheral region
LED1, LED2, LED3: light emitting diode indicator
Specific embodiment
Hereinafter with reference to the present embodiment attached drawing more fully to illustrate the present invention.However, the present invention also can with it is various not
Same form embodies, and should not necessarily be limited by embodiments described herein.The thickness of layer and region in attached drawing can be in order to clearly rise
See and amplifies.The same or similar reference number indicates the same or similar element, and following paragraphs will be repeated no longer one by one.Separately
Outside, the direction term being previously mentioned in embodiment, such as: upper and lower, left and right, front or rear etc. are only the directions with reference to attached drawings.
Therefore, the direction term used is intended to be illustrative and not intended to limit the present invention.In addition, in the drawings using similar or identical
Component symbol indicate similar or identical elements or features, and if any identical with previous figure component symbol in attached drawing, then will
It is omitted to repeat.
Figure 1A to Fig. 1 D is the diagrammatic cross-section of the manufacturing method of the light emitting diode indicator of one embodiment of the invention.
Firstly, please referring to Figure 1A, substrate 100 is provided.In the present embodiment, substrate 100 may include multiple driving elements
TFT, also that is, substrate 100 can be used as the drive array substrate of display.Driving element TFT can be active member or passive
Element (passive element).For example, active member can be thin film transistor (TFT)；And passive device can be diode.At this
In embodiment, substrate 100 may include substrate S, insulating layer IL1, multiple driving element TFT and multiple contact hole C1.
In the present embodiment, driving element TFT may be disposed on substrate S.The material of substrate S can be glass, quartz, organic
Polymer or opaque/reflecting material (such as: conductive material, metal, wafer, ceramics or other materials applicatory) or
It is other materials applicatory.If substrate S uses conductive material or metal, a layer insulating is covered on substrate S and (is not shown
Out), to avoid short circuit problem.In some embodiments, substrate S may also include for the inorganic material as buffer layer, such as
Silicon nitride (SiNx), silica (SiOx) or combinations thereof.
In the present embodiment, insulating layer IL1 may be disposed on substrate S and cover driving element TFT.In some embodiments
In, the material of insulating layer IL1 can be Inorganic Dielectric Material, organic dielectric materials or combinations thereof.For example, inorganic dielectric material
Material can be silica, silicon nitride, silicon oxynitride or combinations thereof；It is resin, epoxy that organic dielectric materials, which can be polyimides,
It is resin or acrylic is the high molecular materials such as resin.
Contact hole C1 may be disposed in insulating layer IL1, can be used to be electrically connected driving element TFT and subsequent transposition in base
Luminescence unit EU1 (i.e. the first luminescence unit) on plate 100.The material of contact hole C1 can be conductive material, such as metal, gold
Belong to oxide, metal nitride, metal oxynitride or combinations thereof.
In some embodiments, substrate 100 may also include common electrode CE, can be with subsequent transposition on substrate 100
Luminescence unit EU2 (i.e. the second luminescence unit) is electrically connected.In the present embodiment, common electrode CE may be disposed on substrate S and
It is covered by insulating layer IL1, and common electrode CE can be electrically connected to subsequent transposition on substrate 100 by contact hole C2
Luminescence unit EU2 (i.e. the second luminescence unit), but invention is not limited thereto.In other embodiments, common electrode CE can also
It is set on insulating layer IL1 or other positions appropriate, invention is not limited thereto.The material of contact hole C2, which can be, leads
Electric material, such as metal, metal oxide, metal nitride, metal oxynitride or combinations thereof.
Then, transposition multiple luminescence unit EU1, EU2 are on substrate 100.In the present embodiment, luminescence unit EU1 and hair
Light unit EU2 can be located separately in the viewing area AA and peripheral region PA of substrate 100 (peripheral region PA can surround viewing area AA), so
The distribution efficiency of elemental area in face can be promoted, and in transposition technique, peripheral region PA can the different luminous list of independent transposition
Member uses different pel spacings (pitch), and then promotes usability.In other embodiments, luminescence unit EU1 and shine
Unit EU2 can also be all located in the viewing area AA of substrate 100, can so promote luminescence unit EU1, EU2 in the AA of viewing area
Uniformity, to reduce resistance capacitance load (RC loading).In some embodiments, micro- pickup array (micro can be passed through
Pick up array) form by each luminescence unit EU1, EU2 transposition on substrate 100.For example, micromechanics can be used
The methods of device (such as vacuum cups) or seal (PDMS) transfer are by each luminescence unit EU1, EU2 transposition in substrate 100
On.In some embodiments, following steps can be used and form luminescence unit EU1, EU2 and by its transposition on substrate 100.It is first
First, luminescence unit EU1, EU2 are formed on growth substrate (such as sapphire substrate) by the mode that epitaxy can be used.Then, sharp
With micro- pickup array by each luminescence unit EU1, EU2 transposition on substrate 100.And then technology (laser is stripped with laser
Lift-offtechnology growth substrate) is removed.The size of luminescence unit EU1, EU2 can be micron or nano-scale.Citing
For, luminescence unit EU1, EU2 are micro-led (μ LED), and size is between 5 μm 2 to 400 μm 2.
Luminescence unit EU1, EU2 can respectively include first electrode E1, second electrode E2 and be located at first electrode E1 and second
Light emitting structure LES between electrode E2.In the present embodiment, the first electrode E1 and second electrode E2 of luminescence unit EU1, EU2 can
All be configured on the surface of separate substrate 100 of light emitting structure LES, also that is, luminescence unit EU1, EU2 can be horizontal shine
Diode.
Light emitting structure LES may include the first semiconductor layer SE1, active layers EL and the second semiconductor layer SE2.Active layers EL
Between the first semiconductor layer SE1 and the second semiconductor layer SE2, and first electrode E1 and the first semiconductor layer SE1 electrically connects
It connects, and second electrode E2 is then electrically connected with the second semiconductor layer SE2.In some embodiments, the first semiconductor layer SE1 and
Two semiconductor layer SE2 are electrically opposite each other.For example, the first semiconductor layer SE1 is p-type doping semiconductor layer and n-type doping
One of them in semiconductor layer；And the second semiconductor layer SE2 is in p-type doping semiconductor layer and n-type doping semiconductor layer
Wherein another one.The material of p-type doping semiconductor layer is, for example, p-type gallium nitride (p-GaN).The material of n-type doping semiconductor layer
E.g. n type gallium nitride (n-GaN).
In some embodiments, active layers EL can be by multiple zone well layer (well layer) and more barrier layers
(barrier layer) is alternately stacked and the multiple quantum trap layer (multiple quantum well, MQW) that constitutes, but this
Invention is not limited.In further embodiments, the structure of active layers EL can also be led for the first semiconductor layer SE1 with the second half
The electron hole of body layer SE2 crosses the combined area to be formed.In other embodiments, active layers EL can also be single quantum well layers
(single quantum well,SQW).In the present embodiment, active layers EL can be multiple quantum trap layer, wherein multiple quantum
Well layer in well layer can be gallium indium nitride layer (InGaN), and the barrier layer in multiple quantum trap layer can be gallium nitride layer
(GaN).In the case where well layer has relative to barrier layer compared with low band gap, barrier layer can limit electrons and holes and tie in well layer
It closes to launch photon.
In some embodiments, luminescence unit EU1, EU2 includes insulating layer IL2, be formed in the first semiconductor layer SE1,
The side wall of second semiconductor layer SE2 and active layers EL so can ensure that electrons and holes combine in active layers EL, mention whereby
Rise luminous efficiency.The material of insulating layer IL2 can be Inorganic Dielectric Material, such as silica, silicon nitride, silicon oxynitride or its group
It closes.The forming method of insulating layer IL2 is, for example, prior to forming covering first electrode E1, second electrode E2 on growth substrate and shining
The insulation material layer (not shown) of structure LES.Then, portions of insulating material layer is removed to form exposed first electrode E1 and second
The insulating layer IL2 of electrode E2.The forming method of insulation material layer is, for example, chemical vapour deposition technique (chemical vapor
Deposition, CVD), atomic layer deposition method (atomic layer deposition, ALD) or combinations thereof.It is exhausted to remove part
The method of edge material layer is, for example, dry ecthing, wet etching or combinations thereof.
The material of first electrode E1 and second electrode E2 can be transparent conductive material, nontransparent conductive material or can be anti-
Penetrate the conductive material of visible light.For example, transparent conductive material can be indium tin oxide (ITO), indium-zinc oxide
(IZO), the metal oxides such as aluminium tin-oxide (ATO) or aluminium zinc oxide (AZO)；Nontransparent conductive material can be tantalum
(Ta), the metal materials such as chromium (Cr), molybdenum (Mo), titanium (Ti), aluminium (Al)；And the conductive material such as aluminium of visible light can be reflected
(Al), silver-colored (Ag), chromium (Cr), copper (Cu), nickel (Ni), titanium (Ti), molybdenum (Mo), magnesium (Mg), platinum (Pt), golden (Au) or combinations thereof.
In some embodiments, at least one of first electrode E1 and second electrode E2 have the function of reflection light path.
Then, Figure 1B is please referred to, is respectively formed corresponding first conductor structure CS1 on luminescence unit EU1, EU2,
In the first conductor structure CS1 respectively with corresponding first electrode E1 be electrically connected.In the present embodiment, it is set to luminescence unit
The first conductor structure CS1 on EU1 (i.e. the first luminescence unit) is electrically connected corresponding first electrode E1 and corresponding drive
Dynamic element TFT；And it is set to the first conductor structure CS1 on luminescence unit EU2 (i.e. the second luminescence unit) and is electrically connected relatively
The first electrode E1 and corresponding second electrode E2 answered.In other words, luminescence unit EU2 is illusory light emitting diode (dummy
LED), the conductive structure that can be used as the second electrode E2 for being electrically connected luminescence unit EU1, in luminescence unit EU1 and hair
In the case that the shape and size of light unit EU2 are approximately uniform (the two can be formed simultaneously by same technique), luminescence unit EU2 and
The second conductor structure CS2 being subsequently formed can be used to as the conducting wire for bridging to luminescence unit EU1 from substrate 100, therefore can avoid
Bridge circuit at the climbing of luminescence unit EU1 (such as side wall) leads to the problem of broken string, and is used to be arranged in the AA of viewing area
The space of bridge circuit can also reduce, and light emitting diode indicator is caused to have good resolution ratio and production yield.
The material of first conductor structure CS1 can be transparent conductive material or nontransparent conductive material.For example, thoroughly
Bright conductive material can be the gold such as indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide or indium germanium zinc oxide
Belong to oxide；Rather than transparent conductive material can be the metal materials such as tantalum, chromium, molybdenum, titanium, aluminium or compound.
In some embodiments, the first electrode E1 in luminescence unit EU1 can be by the first conductor knot for being disposed thereon
Structure CS1 and the contact hole C1 being arranged in substrate 100 are electrically connected driving element TFT；And the first electricity in luminescence unit EU1
Pole E1 and second electrode E2 can pass through the first conductor structure CS1 being disposed thereon and the contact hole C2 being arranged in substrate 100
To be electrically connected common electrode CE.
Then, Fig. 1 C is please referred to, forms insulating layer IL3 on the substrate 100 to cover the electricity of the first conductor structure CS1 and first
Pole E1 and expose second electrode E2.In some embodiments, insulating layer IL3 can directly be covered in the first conductor structure CS1
On first electrode E1.In further embodiments, insulating layer IL3 can also be covered in the first conductor structure CS1 and indirectly
On one electrode E1 (such as there is also other film layers between insulating layer IL3 and the first conductor structure CS1).The material of insulating layer IL3
Material can be organic dielectric materials, for example, polyimides be resin, epoxy be resin, acrylic be the high molecular materials such as resin or
Other suitable Other substrate materials.The forming method of insulating layer IL3 is, for example, first will in a manner of spin coating (spin coating)
Insulation material layer is formed on substrate 100 and covers luminescence unit EU1, EU2.Then, portions of insulating material layer is removed to be formed
The insulating layer IL3 of exposure second electrode E2.The method for removing portions of insulating material layer is, for example, dry ecthing, wet etching or its group
It closes.
Fig. 1 D is please referred to, forms the second conductor structure CS2 on insulating layer IL3, so that the second conductor structure CS2 electrically connects
It is connected to second electrode E2.That is, luminescence unit EU2 and the second conductor structure CS2 can be used as bridged to from substrate 100 it is luminous
The conducting wire of unit EU1.In this way, in the case where the shape and size of luminescence unit EU1 and luminescence unit EU2 are approximately uniform
(the two can be formed simultaneously by same technique), the second conductor structure CS2 can be formed in well on insulating layer IL3 and with shine
The second electrode E2 of unit EU1 is electrically connected, and bridge circuit is avoided to be also easy to produce broken string when being formed in the side wall of luminescence unit EU1
Problem, and the space for being used to be arranged bridge circuit in the AA of viewing area can also reduce, and cause light emitting diode indicator LED to have good
Good resolution ratio.
In addition to this, since the second conductor structure CS2 can be formed in well on the insulating layer IL3 of relatively flat, without
It need to be formed in the side wall of luminescence unit EU1, therefore the thickness of the second conductor structure CS2 can be reduced, to promote diode displaying
(in general, bridge circuit need to have enough thickness that it is avoided to be also easy to produce broken string at climbing to the light extraction efficiency of device LED
Problem).In addition, the bridge circuit that luminescence unit EU2 and the second conductor structure CS2 are constituted can be such that resistance reduces, therefore can be into
One step reduces the thickness of the second conductor structure CS2, to promote the light extraction efficiency of light emitting diode indicator LED.Further, since hair
Light unit EU2 (i.e. the second luminescence unit) is located at the design of peripheral region PA, the distribution ratio of elemental area can be made to change, therefore can
Promote the high-resolution pixel design of light emitting diode indicator；And when carrying out luminescence unit EU2 transposing step, peripheral region PA can
The different luminescence unit of transposition sets different pel spacings, and then promotes the usability of light emitting diode indicator.
The material of second conductor structure CS2 can be transparent conductive material.For example, transparent conductive material can be indium
The metal oxides such as tin-oxide, indium-zinc oxide, aluminium tin-oxide or aluminium zinc oxide.
Based on above-mentioned, since the first conductor structure CS1 being arranged on luminescence unit EU1 is electrically connected corresponding first
Electrode E1 and corresponding driving element TFT；And the first conductor structure CS1 on luminescence unit EU2 is set and is electrically connected phase
Corresponding first electrode E1 and corresponding second electrode E2.In this way, which luminescence unit EU1 can be used to as from substrate 100
The conducting wire of luminescence unit EU2 is bridged to, therefore can avoid bridge circuit at the climbing of luminescence unit EU1 (such as side wall) and be also easy to produce
The problem of broken string, causes light emitting diode indicator LED to have good resolution ratio and production yield.
Fig. 2 is the top view of the light emitting diode indicator of one embodiment of the invention.Fig. 3 is another embodiment of the present invention
The top view of light emitting diode indicator.Fig. 4 is the top view of the light emitting diode indicator of further embodiment of this invention.
Hereinafter, the light emitting diode indicator LED1 that will illustrate above-described embodiment by Fig. 1 D and Fig. 2, same or similar
Element uses same or similar label, and material, technique and technical effect are in hereinbefore at large being described, therefore in hereafter
In it is no longer repeated.In addition, although the manufacturing method of the light emitting diode indicator LED1 of the present embodiment is with above-mentioned technique
It is illustrated for step, but the manufacturing method of light emitting diode indicator of the invention is not limited thereto.
Fig. 1 D is please referred to, light emitting diode indicator LED1 may include substrate 100, (i.e. first is luminous single by luminescence unit EU1
Member), luminescence unit EU2 (i.e. the second luminescence unit), multiple first conductor structure CS1, insulating layer IL3 (i.e. the first insulating layer) and
Second conductor structure CS2.Substrate 100 may include driving element TFT and common electrode CE.Luminescence unit EU1 is set to substrate 100
On, and luminescence unit EU1 includes first electrode E1, second electrode E2 and the hair being configured between first electrode E1 and second electrode E2
Photo structure LES (i.e. the first light emitting structure).Luminescence unit EU2 is set on substrate 100, and luminescence unit EU2 includes third electricity
Pole (the first electrode E1 of i.e. above-mentioned luminescence unit EU2), the 4th electrode (the second electrode E2 of i.e. above-mentioned luminescence unit EU2) and match
It is placed in third electrode and the 4th interelectrode light emitting structure LES (i.e. the second light emitting structure).First conductor structure CS1 is respectively set
In on luminescence unit EU1 and luminescence unit EU2, and first electrode E1 passes through corresponding first conductor structure CS1 and driving member
Part TFT is electrically connected, and third electrode (the first electrode E1 of i.e. above-mentioned luminescence unit EU2) passes through corresponding first conductor knot
Structure CS1 and the 4th electrode (the second electrode E2 of i.e. above-mentioned luminescence unit EU2) and common electrode CE are electrically connected.Insulating layer
IL3 is set on substrate 100, and insulating layer IL3 is covered on first electrode E1.Second conductor structure CS2 is set to insulation
Layer IL3 be upper and the second conductor structure CS2 and second electrode E2 and the 4th electrode (the second electrode E2 of i.e. above-mentioned luminescence unit EU2)
It is electrical connected.
In some embodiments, first electrode E1 and second electrode E2 is set to the separate substrate 100 of light emitting structure LES
On surface.In further embodiments, above-mentioned third electrode (the first electrode E1 of i.e. above-mentioned luminescence unit EU2) and the 4th electricity
(the second electrode E2 of i.e. above-mentioned luminescence unit EU2) may also set up in the separate substrate of the light emitting structure LES of luminescence unit EU2 for pole
On 100 surface.
In the present embodiment, the light emitting structure LES of luminescence unit EU1, EU2 can respectively include the first semiconductor layer SE1,
The two semiconductor layer SE2 and active layers EL being set between the first semiconductor layer SE1 and the second semiconductor layer SE2.
In some embodiments, light emitting diode indicator LED1 may also include insulating layer IL2 (i.e. second insulating layer),
It is set to the side wall of the first semiconductor layer SE1, the second semiconductor layer SE2 and active layers EL.
Referring to Fig. 1 D and Fig. 2, in the present embodiment, substrate 100 has viewing area AA and around viewing area AA's
Peripheral region PA, wherein luminescence unit EU1 is arranged in the AA of viewing area, and luminescence unit EU2 is arranged in the PA of peripheral region.Another
In a little embodiments, luminescence unit EU1 and luminescence unit EU2 are all arranged in the AA of viewing area, such as luminescence unit EU2 (herein may be used
To be illusory light emitting diode) it is arranged between two adjacent luminescence unit EU1 (as shown in Figure 3 and Figure 4), but the present invention is not
As limit, the relative configuration position of luminescence unit EU1 and luminescence unit EU2 can be adjusted according to demand.
Fig. 5 is the diagrammatic cross-section of the light emitting diode indicator of one more embodiment of the present invention, wherein light emitting diode
Display led 2 is approximately identical to light emitting diode indicator LED1, and different is in light emitting diode indicator LED2's
Insulating layer IL3 ' be covered in the first electrode E1 of luminescence unit EU1 and exposure luminescence unit EU2 first electrode E1, therefore it is identical or
Similar components use same or similar label, and connection relationship, material and its technique of remaining component are detailed in hereinbefore carrying out
Ground description, therefore it is no longer repeated below.
Referring to figure 5., the insulating layer IL3 of light emitting diode indicator LED2 is covered in the first electrode of luminescence unit EU1
The first electrode E1 of E1 and exposure luminescence unit EU2, therefore, for luminescence unit EU2, the second conductor structure CS2 ' can cover
It is placed on the first electrode E1 of luminescence unit EU2 and is in direct contact with it, can so further decrease by luminescence unit EU2 and
The resistance for the bridge circuit that two conductor structure CS2 ' are constituted reduces the second conductor structure CS2 ' on luminescence unit EU1 whereby
Thickness, and then promoted light emitting diode indicator LED2 light extraction efficiency.
Fig. 6 is the diagrammatic cross-section of the light emitting diode indicator of one more embodiment of the present invention, wherein light emitting diode
Display led 3 is approximately identical to light emitting diode indicator LED1, and different is in light emitting diode indicator LED3's
First electrode E1 ' is set on the surface of adjacent substrates 100 of light emitting structure LES, and second electrode E2 is then set to light-emitting junction
On the surface of the separate substrate 100 of structure LES, therefore same or similar element uses same or similar label, the connection of remaining component
Relationship, material and its technique are in hereinbefore at large being described, therefore it is no longer repeated below.
Fig. 6 is please referred to, the first electrode E1 ' of light emitting diode indicator LED3 is set to the neighbouring base of light emitting structure LES
On the surface of plate 100, and second electrode E2 is then set on the surface of separate substrate 100 of light emitting structure LES, so can be into one
Step promotes the light extraction efficiency of light emitting diode indicator LED3.In the present embodiment, luminescence unit EU1 and luminescence unit EU2
First electrode E1 ' (that is, first electrode and third electrode) is all formed on the surface of adjacent substrates 100 of light emitting structure LES,
But invention is not limited thereto.In other embodiments, the first electrode E1 ' of luminescence unit EU1 can also is formed in luminous
The surface of the adjacent substrates 100 of structure LES.In the present embodiment, the first conductor structure CS1 can be covered in by light emitting structure LES
On the first electrode E1 ' exposed.
In the present embodiment, the forming method of luminescence unit EU1, EU2 is, for example, prior to sequentially forming hair on growth substrate
Photo structure LES and second electrode E2.Then, above-mentioned light emitting structure LES1 and second electrode E2 are overturn, and by first electrode E1 '
It is formed on the surface of the first semiconductor layer SE1, to form luminescence unit EU1, EU2.
In conclusion luminescence unit includes more in the light emitting diode indicator of above-described embodiment and its manufacturing method
A first luminescence unit and multiple second luminescence units, wherein the first conductor structure electric connection of the first luminescence unit is corresponding
First electrode and corresponding driving element, and the second luminescence unit the first conductor structure be electrically connected corresponding first
Electrode and corresponding second electrode.In this way, which the second luminescence unit can be used to bridge to the first luminous list as from substrate
The conducting wire of member, therefore can avoid bridge circuit at the climbing of the first luminescence unit (such as side wall) and lead to the problem of broken string, and
Being used to that the space of bridge circuit is arranged in viewing area can also reduce, cause light emitting diode indicator have good resolution ratio and
Production yield.
Although the present invention is disclosed as above with embodiment, however, it is not to limit the invention, any technical field
Middle technical staff, without departing from the spirit and scope of the invention, when can make a little variation and retouching, therefore protection of the invention
Range is subject to view as defined in claim.
Claims (15)
1. a kind of manufacturing method of light emitting diode indicator, comprising:
A substrate is provided, which includes multiple driving elements；
For the multiple luminescence units of transposition on the substrate, the luminescence unit respectively includes a first electrode, a second electrode and position
A light emitting structure between the first electrode and the second electrode；
Corresponding one first conductor structure is respectively formed on the luminescence unit, first conductor structure is respectively and relatively
The first electrode answered is electrically connected；
In forming an insulating layer on the substrate, which covers first conductor structure and the first electrode and exposes
The second electrode；And
In forming one second conductor structure on the insulating layer, second conductor structure is made to be electrically connected to the second electrode,
Wherein the luminescence unit includes multiple first luminescence units and multiple second luminescence units, first luminescence unit
First conductor structure is electrically connected the corresponding first electrode and the corresponding driving element, and described second shines
First conductor structure of unit is electrically connected the corresponding first electrode and the corresponding second electrode.
2. the manufacturing method of light emitting diode indicator as described in claim 1, wherein luminescence unit described in transposition is to pass through
The luminescence unit is set on the substrate by one micro- pickup array format.
3. the manufacturing method of light emitting diode indicator as described in claim 1, wherein respectively first electricity of the luminescence unit
Pole and the second electrode are all configured on the surface far from the substrate of the light emitting structure.
4. the manufacturing method of light emitting diode indicator as described in claim 1, wherein the first electrode be formed in it is described
On the surface of the neighbouring substrate of light emitting structure, the second electrode is formed in the surface far from the substrate of the light emitting structure
On, and first conductor structure is covered on the first electrode exposed by the light emitting structure.
5. the manufacturing method of light emitting diode indicator as described in claim 1, wherein the light emitting structure respectively includes one
First semiconductor layer, an active layers and one second semiconductor layer, the active layers be located at first semiconductor layer and this second half
Between conductor layer, and the first electrode and first semiconductor layer are electrically connected, the second electrode and second semiconductor layer electricity
Property connection.
6. the manufacturing method of light emitting diode indicator as described in claim 1, the wherein substrate further include:
One common electrode is electrically connected first conductor structure of second luminescence unit.
7. a kind of light emitting diode indicator, comprising:
One substrate, including a driving element and a common electrode；
One first luminescence unit, is set on the substrate, which includes a first electrode, a second electrode and match
One first light emitting structure being placed between the first electrode and the second electrode；
One second luminescence unit, is set on the substrate, which includes a third electrode, one the 4th electrode and match
It is placed in the third electrode and the 4th interelectrode one second light emitting structure；
Multiple first conductor structures are respectively arranged on first luminescence unit and second luminescence unit, and the first electrode
It is electrically connected by corresponding first conductor structure and the driving element, and the third electrode passes through corresponding first conductor
Structure and the 4th electrode and the common electrode are electrically connected；
One first insulating layer, is set on the substrate, which is covered on the first electrode；And
One second conductor structure, is set on first insulating layer and second conductor structure and the second electrode and described the
Four electrodes are electrical connected.
8. light emitting diode indicator as claimed in claim 7, wherein the first electrode and the second electrode be set to this
On the surface far from the substrate of one light emitting structure.
9. light emitting diode indicator as claimed in claim 8, wherein the third electrode and the 4th electrode be set to this
On the surface far from the substrate of two light emitting structures.
10. light emitting diode indicator as claimed in claim 7, wherein the first electrode is set to first light emitting structure
On the surface of the neighbouring substrate, which is set on the surface far from the substrate of first light emitting structure, and this
One conductor structure is covered on the first electrode exposed by first light emitting structure.
11. light emitting diode indicator as claimed in claim 7, wherein first light emitting structure and second light emitting structure divide
Do not include:
One first semiconductor layer；
One second semiconductor layer；And
One active layers are set between first semiconductor layer and second semiconductor layer.
12. light emitting diode indicator as claimed in claim 11, further includes:
One second insulating layer is set to the side wall of first semiconductor layer, second semiconductor layer and the active layers.
13. light emitting diode indicator as claimed in claim 11, wherein the active layers include quantum well structures.
14. light emitting diode indicator as claimed in claim 7, which has a viewing area and a peripheral region, the periphery
Area surrounds the viewing area, and wherein first luminescence unit and second luminescence unit are all arranged in the viewing area.
15. light emitting diode indicator as claimed in claim 7, which has a viewing area and a peripheral region, the periphery
Area surrounds the viewing area, and wherein first luminescence unit is arranged in the viewing area, and second luminescence unit was arranged in this week
In border area.
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| TW107118623A TWI667786B (en) | 2018-05-31 | 2018-05-31 | Light-emitting diode display and manufacturing method thereof |
| TW107118623 | 2018-05-31 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102782892A (en) * | 2010-03-12 | 2012-11-14 | 夏普株式会社 | Light-emitting device manufacturing method, light-emitting device, lighting device, backlight, liquid-crystal panel, display device, display device manufacturing method, display device drive method and liquid-crystal display device |
| US20140027709A1 (en) * | 2012-07-30 | 2014-01-30 | John A. Higginson | Method and structure for receiving a micro device |
| CN105280665A (en) * | 2014-06-23 | 2016-01-27 | 晶元光电股份有限公司 | Photoelectric element and manufacture method thereof |
| CN106025029A (en) * | 2016-04-22 | 2016-10-12 | 友达光电股份有限公司 | Micro light-emitting diode structure, pixel unit thereof and light-emitting diode display panel |
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| US9754926B2 (en) * | 2011-01-31 | 2017-09-05 | Cree, Inc. | Light emitting diode (LED) arrays including direct die attach and related assemblies |
| KR101182231B1 (en) * | 2010-06-04 | 2012-09-12 | 삼성디스플레이 주식회사 | Organic light emitting diode display and method for manufacturing the same |
| TWI665800B (en) * | 2015-06-16 | 2019-07-11 | 友達光電股份有限公司 | Light emitting diode display and manufacturing method thereof |
| KR102471111B1 (en) * | 2015-11-23 | 2022-11-28 | 삼성디스플레이 주식회사 | Organic light-emitting display apparatus and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102782892A (en) * | 2010-03-12 | 2012-11-14 | 夏普株式会社 | Light-emitting device manufacturing method, light-emitting device, lighting device, backlight, liquid-crystal panel, display device, display device manufacturing method, display device drive method and liquid-crystal display device |
| US20140027709A1 (en) * | 2012-07-30 | 2014-01-30 | John A. Higginson | Method and structure for receiving a micro device |
| CN105280665A (en) * | 2014-06-23 | 2016-01-27 | 晶元光电股份有限公司 | Photoelectric element and manufacture method thereof |
| CN106025029A (en) * | 2016-04-22 | 2016-10-12 | 友达光电股份有限公司 | Micro light-emitting diode structure, pixel unit thereof and light-emitting diode display panel |
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