CN109473475A - The IGBT device of processing yield can be improved - Google Patents
The IGBT device of processing yield can be improved Download PDFInfo
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- CN109473475A CN109473475A CN201811603145.5A CN201811603145A CN109473475A CN 109473475 A CN109473475 A CN 109473475A CN 201811603145 A CN201811603145 A CN 201811603145A CN 109473475 A CN109473475 A CN 109473475A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 100
- 230000001413 cellular effect Effects 0.000 claims abstract description 89
- 229920005591 polysilicon Polymers 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000009826 distribution Methods 0.000 claims abstract description 4
- 238000009413 insulation Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000003834 intracellular effect Effects 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 2
- -1 and certainly Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
Abstract
The present invention relates to a kind of IGBT devices that can improve processing yield comprising semiconductor substrate and cellular region, semiconductor substrate include the first conduction type drift region with the second conduction type base region；Cellular region includes several cellulars in distribution in parallel；Emitter-polysilicon includes the second polysilicon body of the first polysilicon body of emitter and emitter, the first polysilicon body of emitter is filled in emitter trench, the second polysilicon body of emitter is located above the notch of emitter trench, the width of the second polysilicon body of emitter is greater than the width of the first polysilicon body of emitter, emitter metal layer can be contacted directly with emitter the second polysilicon body Ohmic contact or with the side wall of the second polysilicon body of emitter, to be able to achieve the Ohmic contact of emitter metal layer and emitter-polysilicon, avoid the biggish manufacture craft of prior art difficulty, reduce the difficulty of processing of IGBT device, improve the processable ability of IGBT device, improve the processing yield of IGBT device.
Description
Technical field
The present invention relates to a kind of IGBT device, especially a kind of IGBT device that can improve processing yield belongs to IGBT device
The technical field of part.
Background technique
IGBT is a kind of device representative in power semiconductor, because it has high voltage, low conducting simultaneously
Pressure drop, easily driving, the advantages that switching speed is fast, have important in many power domains such as Switching Power Supply, frequency control, inverter
Using.
With the development of IGBT technology, trench gate IGBT device is increasingly becoming mainstream.In order to improve trench gate IGBT device
The density of carrier concentration when conducting near emitter, trench gate is increasing, and the parasitic input capacitance of device increases, seriously
Affect the overall performance of IGBT device.By the way that part trench gate in device is connected by contact hole with emitter metal layer,
The parasitic input capacitance that IGBT device can be effectively reduced, alleviating the increase of groove grid density leads to asking for input capacitance increase
Topic, improves the overall performance of device.
Due to the narrower width of trench gate, setting contact hole is connected with emitter metal layer in trench gate adds semiconductor
Work required precision is very high, contact hole aperture, the alignment of contact hole and slot grid and the filling of emitter metal being mainly concerned with
Process is required to very high machining accuracy, process equipment domestic at present it is difficult to ensure that product realization and product volume postpartum
Yield.
Summary of the invention
The purpose of the present invention is overcoming the deficiencies in the prior art, a kind of IGBT device that can improve processing yield is provided
Part, it is compact-sized, the difficulty of processing of IGBT device can be reduced, the processable ability of IGBT device is improved, improves processing yield,
Securely and reliably.
According to technical solution provided by the invention, the IGBT device that processing yield can be improved, including semiconductor substrate
And the cellular region positioned at the semiconductor substrate center, the semiconductor substrate include the first conduction type drift region and position
In the second conduction type base region of first conduction type drift region internal upper part；Cellular region includes several members in distribution in parallel
Born of the same parents；
Each member intracellular includes two adjacent cellular grooves and the transmitting between described two adjacent cellular grooves
Pole groove, cellular groove, emitter trench are respectively positioned in the second conduction type base region, and the slot bottom and emitter of cellular groove
The slot bottom of groove is respectively positioned in the first conduction type drift region below the second conduction type base region；
It further include the emitter-polysilicon that connection is adapted to emitter trench on the section of the IGBT device, it is described
Emitter-polysilicon include the first polysilicon body of emitter being filled in emitter trench and be located at the emitter trench
The second polysilicon body of emitter outside notch, the second polysilicon body of emitter are connect with the first polysilicon body of emitter, and are emitted
The width of the second polysilicon body of pole is greater than the width of the first polysilicon body of emitter；The first polysilicon body of emitter passes through emitter
Oxide layer is isolated with the lateral wall insulation of emitter trench, and the second polysilicon body of emitter passes through emitter oxide layer and lower section
Second conduction type base region is dielectrically separated from；
In the top of second conduction type base region, emitter metal layer, the emitter metal layer and emitter are set
Polysilicon and the second conduction type base region Ohmic contact.
On the section of the IGBT device, grid polycrystalline silicon is filled in cellular groove, the grid polycrystalline silicon is logical
It crosses covering cellular trenched side-wall and insulation gate oxide on bottom wall and the side wall and bottom wall of cellular groove is dielectrically separated from, hair
Emitter-base bandgap grading metal layer is dielectrically separated from by covering the insulating medium layer of cellular groove notch with grid polycrystalline silicon；
The first conduction type of cellular groove emitter region, the cellular are set on the corresponding lateral wall of adjacent cellular groove
Groove the first conduction type emitter region is contacted with the lateral wall of neighbouring cellular groove, and cellular groove the first conduction type emitter region
With emitter metal layer Ohmic contact.
The first conduction type of emitter trench emitter region, the emitter are set above the emitter trench lateral wall
Groove the first conduction type emitter region is contacted with the neighbouring corresponding lateral wall of emitter trench；The first conduction type of emitter trench
Emitter region is corresponding with the second polysilicon body of emitter of surface, and the second polysilicon body of emitter passes through emitter oxide layer and hair
Emitter-base bandgap grading groove the first conduction type emitter region is dielectrically separated from, emitter metal layer and the first conduction type of emitter trench emitter region
Ohmic contact.
On the section of the IGBT device, the lateral distance between the lateral wall and emitter metal layer of cellular groove is not
Less than 0.5 μm.
The side wall side wall of second polysilicon body of emitter is vertical plane, inclined-plane or arcwall face.
It is also covered on the second polysilicon body of emitter in the insulating medium layer, the insulating medium layer is silicon oxide layer
Or silicon nitride layer, insulating medium layer with a thickness of
Emitter metal layer with a thickness of
The second conduction type collecting zone is set at the back side of first conduction type drift region, in second conductive-type
Collector electrode metal layer, the collector electrode metal layer and the second conduction type collecting zone Ohmic contact are also set up on type collecting zone.
Depth phase one of depth of the cellular groove in semiconductor substrate with emitter trench in semiconductor substrate
It causes.
The material of the semiconductor substrate includes silicon.
It is conductive for N-type power IGBT device, first in " first conduction type " and " the second conduction type " the two
Type refers to N-type, and the second conduction type is p-type；For p-type power IGBT device, the first conduction type and the second conduction type institute
The type of finger and N-type semiconductor device are exactly the opposite.
Advantages of the present invention: emitter-polysilicon includes the second polysilicon of the first polysilicon body of emitter and emitter
Body, the first polysilicon body of emitter are filled in emitter trench, and the second polysilicon body of emitter is located at the slot of emitter trench
Above mouthful, the width of the second polysilicon body of emitter is greater than the width of the first polysilicon body of emitter, and emitter metal layer can be straight
It connects with emitter the second polysilicon body Ohmic contact or is contacted with the side wall of the second polysilicon body of emitter, to be able to achieve transmitting
The Ohmic contact of pole metal layer and emitter-polysilicon avoids the biggish manufacture craft of prior art difficulty, reduces IGBT
The difficulty of processing of device improves the processable ability of IGBT device, improves the processing yield of IGBT device.
Detailed description of the invention
Fig. 1 is a kind of implementation structural schematic diagram of the invention.
Fig. 2 is second of implementation structural schematic diagram of the invention.
Fig. 3 is the third implementation structural schematic diagram of the invention.
Description of symbols: 1- grid polycrystalline silicon, 2- insulation gate oxide, 3- emitter metal layer, 4- emitter polycrystalline
Silicon, 5- insulating medium layer, 6- emitter oxide layer, 7-P type base area, 8- cellular groove N+ emitter region, 9-N type drift region, 10-P+
Collecting zone, 11- collector electrode metal layer, 12- emitter trench N+ emitter region, 13- cellular groove, 14- emitter trench, 15- hair
The second polysilicon body of the second polysilicon body of emitter-base bandgap grading and 16- emitter.
Specific embodiment
Below with reference to specific drawings and examples, the invention will be further described.
As shown in Figure 1: in order to reduce the difficulty of processing of IGBT device, the processable ability of IGBT device is improved, is improved
Yield is processed, by taking N-type IGBT device as an example, the present invention includes semiconductor substrate and the member positioned at the semiconductor substrate center
Born of the same parents area, the semiconductor substrate include N-type drift region 9 and positioned at the p-type base area 7 of 9 internal upper part of N-type drift region；Cellular
Area includes several cellulars in distribution in parallel；
Each member is intracellular including two adjacent cellular grooves 13 and between described two adjacent cellular grooves 13
Emitter trench 14, cellular groove 13, emitter trench 14 are respectively positioned in p-type base area 7, and the slot bottom and hair of cellular groove 13
The slot bottom of emitter-base bandgap grading groove 14 is respectively positioned in the N-type drift region 9 of 7 lower section of p-type base area；
It further include the emitter-polysilicon 4 that connection is adapted to emitter trench 14, institute on the section of the IGBT device
Emitter-polysilicon 4 is stated to include the first polysilicon body of emitter 16 for being filled in emitter trench 14 and be located at the transmitting
The second polysilicon body of emitter 15 outside 14 notch of pole groove, the second polysilicon body of emitter 15 and the first polysilicon body of emitter
16 connections, and the width of the second polysilicon body of emitter 15 is greater than the width of the first polysilicon body of emitter 16；Emitter first
Polysilicon body 16 is isolated by emitter oxide layer 6 with the lateral wall insulation of emitter trench 14, and the second polysilicon body of emitter
15 are dielectrically separated from by emitter oxide layer 6 and the p-type base area 7 of lower section；
In the top of the p-type base area 7, emitter metal layer 3, the emitter metal layer 3 and emitter-polysilicon are set
4 and 7 Ohmic contact of p-type base area.
Specifically, the material of semiconductor substrate includes silicon, and certainly, semiconductor substrate can also be using other materials, this
Place repeats no more.Cellular region is located at the center of semiconductor substrate, generally, also sets up terminal area in the outer ring of cellular region,
Cellular region can be protected using terminal area, the specific matching relationship between cellular region, terminal area is the art
Known to personnel, details are not described herein again.
P-type base area 7 is arranged in N-type drift region 9, and the thickness of p-type base area 7 is much smaller than the thickness of N-type drift region 9.Cellular
Cellular in area is using in parallel in integrally, and the cellular in cellular region uses groove structure, and each cellular includes two adjacent members
Born of the same parents' groove 13 and the emitter trench 14 between cellular groove 13, the notch and N of cellular groove 13, emitter trench 14
The upper surface of type drift region 9 is aligned, cellular groove 13, emitter trench 14 slot bottom be located at the N-type of 7 lower section of p-type base area and drift about
In area 9, cellular groove 13, emitter trench 14 top run through p-type base area 7.When it is implemented, the cellular groove 13 is half
Depth in conductor substrate is consistent with depth of the emitter trench 14 in semiconductor substrate, certainly, emitter trench 14
Depth and the depth of cellular groove 13 can also be different, and specifically can according to need and selected, details are not described herein again.Work as cellular
When groove 13 and 14 depth having the same of emitter trench, cellular groove 13 and emitter trench 14 can walk for same technique
Rapid layer.
On the section of IGBT device, emitter-polysilicon 4 is common conductive polycrystalline silicon, the second polysilicon body of emitter
15 width is greater than the first polysilicon body of emitter 16, i.e. the second polysilicon body of emitter 15 and the first polysilicon body of emitter 16
Between it is T-shaped, the second polysilicon body of emitter 15 is located at the top of 14 notch of emitter trench, emitter metal layer 3 by with
15 Ohmic contact of the second polysilicon body of emitter, is able to achieve the Ohmic contact of emitter metal 3 Yu emitter-polysilicon 4, thus
It can make being electrically connected between emitter-polysilicon 4 and emitter metal layer 3 in IGBT device, avoid prior art difficulty
Biggish manufacture craft reduces the difficulty of processing of IGBT device, improves the processable ability of IGBT device, improves IGBT
The processing yield of device.
Emitter oxide layer 6 in emitter trench 14 covers the side wall and bottom wall of emitter trench 14, thus
The first polysilicon body of emitter 16 is dielectrically separated from by emitter oxide layer 6 and the side wall and bottom wall of emitter trench 14,
It is able to achieve being dielectrically separated between the first polysilicon body of emitter 16 and N-type drift region 9 and p-type base area 7.More than emitter second
Crystal silicon body 15 is dielectrically separated from by the emitter oxide layer 6 being located at outside 14 notch of emitter trench with p-type base area 7, and transmitting is located at
Emitter oxide layer 6 outside 14 notch of pole groove and the emitter oxide layer 6 in emitter trench 14 can be same work
Skill manufactures layer.
Further, on the section of the IGBT device, grid polycrystalline silicon 1 is filled in cellular groove 13, it is described
The side wall that grid polycrystalline silicon 1 passes through insulation gate oxide 2 and cellular groove 13 on covering 13 side wall of cellular groove and bottom wall
And bottom wall is dielectrically separated from, the insulating medium layer 5 and grid polycrystalline silicon that emitter metal layer 3 passes through covering 13 notch of cellular groove
1 is dielectrically separated from；
Cellular groove N+ emitter region 8, the cellular groove N+ are set on the corresponding lateral wall of adjacent cellular groove 13
Emitter region 8 is contacted with the lateral wall of neighbouring cellular groove 13, and cellular groove N+ emitter region 8 connects with 3 ohm of emitter metal layer
Touching.
In the embodiment of the present invention, grid polycrystalline silicon 1 is conductive polycrystalline silicon, and grid polycrystalline silicon 1 is filled in cellular groove 13,
The depth of grid polycrystalline silicon 1 be not more than cellular groove 13 depth, grid polycrystalline silicon 1 by covering 13 side wall of cellular groove and
The insulation gate oxide 2 and the side wall and bottom wall of cellular groove 13 of bottom wall are dielectrically separated from, and grid polycrystalline silicon 1 passes through dielectric
Layer 5 is dielectrically separated from emitter metal layer 3.Insulation gate oxide 2 and emitter oxide layer 6 are generally silicon dioxide layer.
Cellular groove N+ emitter region 8 is located at the top of adjacent 13 adjacent outer wall of cellular groove, and cellular groove N+ emits
Area 8 is contacted with adjacent 13 lateral wall of cellular groove.When emitter metal layer 3 and 7 Ohmic contact of p-type base area, emitter metal
Layer 3 and cellular groove N+ emitter region 8 also Ohmic contact.On the section of the IGBT device, covering 13 notch of cellular groove
The width of insulating medium layer 5 is greater than the width of 13 notch of cellular groove, and insulating medium layer 5 is also covered on cellular groove N+ emitter region
On 8.
Further, emitter trench N+ emitter region 12, the hair are set above 14 lateral wall of emitter trench
Emitter-base bandgap grading groove N+ emitter region 12 is contacted with the neighbouring corresponding lateral wall of emitter trench 14；Emitter trench N+ emitter region 12 with just
The second polysilicon body of emitter 15 of top is corresponding, and the second polysilicon body of emitter 15 passes through emitter oxide layer 6 and emitter
Groove N+ emitter region 12 is dielectrically separated from, emitter metal layer 3 and 12 Ohmic contact of emitter trench N+ emitter region.
In the embodiment of the present invention, emitter trench N+ emitter region 12 is set above 14 lateral wall of emitter trench, it is described
Emitter trench N+ emitter region 12 and cellular groove N+ emitter region 8 can be same technique manufactures layer.Emitter trench N+ transmitting
Area 12 is contacted with the lateral wall of emitter trench 14, and with 3 Ohmic contact of emitter metal layer.When 14 lateral wall of emitter trench
When contacting with emitter trench N+ emitter region 12, the second polysilicon body of emitter 15 passes through emitter oxide layer 6 and emitter ditch
Slot N+ emitter region 12 is dielectrically separated from.Emitter trench N+ emitter region 12, cellular groove N+ emitter region 8 are respectively positioned in p-type base area 7.
Further, it is also covered on the second polysilicon body of emitter 15 in the insulating medium layer 5, the dielectric
Layer 5 be silicon oxide layer or silicon nitride layer, insulating medium layer 5 with a thickness of
In the embodiment of the present invention, when insulating medium layer 5 is covered on the second polysilicon body of emitter 15 and to emitter
The upper surface of two polysilicon bodies 15 carries out all standing, and emitter metal layer 3 can be with the side wall of the second polysilicon body of emitter 15
Contact, as shown in Figure 2.It is of course also possible to which the contact hole of perforation insulating medium layer 5 is arranged, emitter metal layer 3 passes through contact hole
Afterwards with the upper surface of the second polysilicon body of emitter 15 and side Ohmic contact, as shown in Figure 3.As shown in figure 3, SI semi-insulation
Dielectric layer 5 is also contacted with emitter trench N+ emitter region 8.
When it is implemented, emitter metal layer 3 with a thickness ofSecond polycrystalline of emitter
The side wall side wall of silicon body 15 is vertical plane, inclined-plane or arcwall face.The shape of 15 side wall of the second polysilicon body of emitter can basis
It is selected, details are not described herein again.
Further, on the section of the IGBT device, between the lateral wall and emitter metal layer 3 of cellular groove 13
Lateral distance be not less than 0.5 μm.
In the embodiment of the present invention, emitter metal layer 3 and 7 Ohmic contact of p-type base area, 13 lateral wall of cellular groove and transmitting
Lateral distance between pole metal layer 3 is the lateral wall and emitter metal layer 3 and 7 contact portion of p-type base area of cellular groove 13
The distance between point.
Further, P+ collecting zone 10 is set at the back side of the N-type drift region 9, is also set on the P+ collecting zone 10
Set collector electrode metal layer 11, the collector electrode metal layer 11 and 10 Ohmic contact of P+ collecting zone.
In the embodiment of the present invention, P+ collecting zone 10 covers the back side of N-type drift region 9, and emitter metal layer 3 is located at N-type drift
The front in area 9, collector electrode metal layer 11 and 10 Ohmic contact of P+ collecting zone are moved, so as to form the collector of IGBT device.This
Outside, the emitter that IGBT device can be formed by emitter metal layer 3 passes through the grid gold with 1 Ohmic contact of grid polycrystalline silicon
Category layer can form the gate electrode of IGBT device, and the specific process for forming gate electrode is known to those skilled in the art, herein not
It repeats again.
Claims (10)
1. a kind of IGBT device that can improve processing yield, including semiconductor substrate and positioned at the semiconductor substrate center
Cellular region, the semiconductor substrate is including the first conduction type drift region and is located in first conduction type drift region
Second conduction type base region in portion；Cellular region includes several cellulars in distribution in parallel；It is characterized in that:
Each member intracellular includes two adjacent cellular grooves and the emitter ditch between described two adjacent cellular grooves
Slot, cellular groove, emitter trench are respectively positioned in the second conduction type base region, and the slot bottom and emitter trench of cellular groove
Slot bottom be respectively positioned in the first conduction type drift region below the second conduction type base region；
It further include the emitter-polysilicon that connection is adapted to emitter trench, the transmitting on the section of the IGBT device
Pole polysilicon include the first polysilicon body of emitter being filled in emitter trench and be located at the emitter trench notch
Outer the second polysilicon body of emitter, the second polysilicon body of emitter are connect with the first polysilicon body of emitter, and emitter
The width of two polysilicon bodies is greater than the width of the first polysilicon body of emitter；The first polysilicon body of emitter is aoxidized by emitter
Layer is isolated with the lateral wall insulation of emitter trench, and the second polysilicon body of emitter passes through the second of emitter oxide layer and lower section
Conduction type base region is dielectrically separated from；
In the top of second conduction type base region, emitter metal layer, the emitter metal layer and emitter polycrystalline are set
Silicon and the second conduction type base region Ohmic contact.
2. the IGBT device according to claim 1 that processing yield can be improved, it is characterized in that: cutting in the IGBT device
On face, grid polycrystalline silicon is filled in cellular groove, the grid polycrystalline silicon passes through covering cellular trenched side-wall and bottom wall
On insulation gate oxide and the side wall and bottom wall of cellular groove be dielectrically separated from, emitter metal layer by covering cellular groove
The insulating medium layer of notch is dielectrically separated from grid polycrystalline silicon；
The first conduction type of cellular groove emitter region, the cellular groove are set on the corresponding lateral wall of adjacent cellular groove
First conduction type emitter region is contacted with the lateral wall of neighbouring cellular groove, and cellular groove the first conduction type emitter region and hair
Emitter-base bandgap grading metal layer Ohmic contact.
3. the IGBT device according to claim 2 that processing yield can be improved, it is characterized in that: outside the emitter trench
The first conduction type of emitter trench emitter region, emitter trench the first conduction type emitter region and neighbour are set above side wall
The nearly corresponding lateral wall contact of emitter trench；The emitter second of emitter trench the first conduction type emitter region and surface
Polysilicon body is corresponding, and the second polysilicon body of emitter passes through emitter oxide layer and the first conduction type of emitter trench emitter region
It is dielectrically separated from, emitter metal layer and the first conduction type of emitter trench emitter region Ohmic contact.
4. the IGBT device according to claim 1 that processing yield can be improved, it is characterized in that: cutting in the IGBT device
On face, the lateral distance between the lateral wall and emitter metal layer of cellular groove is not less than 0.5 μm.
5. the IGBT device according to claim 1 that processing yield can be improved, it is characterized in that: the second polycrystalline of the emitter
The side wall side wall of silicon body is vertical plane, inclined-plane or arcwall face.
6. it is according to claim 2 can improve processing yield IGBT device, it is characterized in that: the insulating medium layer also
It is covered on the second polysilicon body of emitter, the insulating medium layer is silicon oxide layer or silicon nitride layer, the thickness of insulating medium layer
Degree is
7. the IGBT device according to claim 1 that processing yield can be improved, it is characterized in that: the thickness of emitter metal layer
For
8. the IGBT device according to claim 1 that processing yield can be improved, it is characterized in that: in first conduction type
The second conduction type collecting zone is arranged in the back side of drift region, on the second conduction type collecting zone on also set up collector gold
Belong to layer, the collector electrode metal layer and the second conduction type collecting zone Ohmic contact.
9. the IGBT device according to claim 1 that processing yield can be improved, it is characterized in that: the cellular groove is partly being led
Depth in structure base board is consistent with depth of the emitter trench in semiconductor substrate.
10. the IGBT device according to claim 1 that processing yield can be improved, it is characterized in that: the semiconductor substrate
Material includes silicon.
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| CN201811603145.5A CN109473475A (en) | 2018-12-26 | 2018-12-26 | The IGBT device of processing yield can be improved |
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| CN201811603145.5A CN109473475A (en) | 2018-12-26 | 2018-12-26 | The IGBT device of processing yield can be improved |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379852A (en) * | 2019-08-21 | 2019-10-25 | 江苏中科君芯科技有限公司 | The groove-shaped IGBT device of miller capacitance can be reduced |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6255184B1 (en) * | 1999-08-30 | 2001-07-03 | Episil Technologies, Inc. | Fabrication process for a three dimensional trench emitter bipolar transistor |
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| CN110379852A (en) * | 2019-08-21 | 2019-10-25 | 江苏中科君芯科技有限公司 | The groove-shaped IGBT device of miller capacitance can be reduced |
| CN110379852B (en) * | 2019-08-21 | 2022-10-11 | 江苏中科君芯科技有限公司 | Groove type IGBT device capable of reducing Miller capacitance |
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